US20130126518A1 - Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses - Google Patents
Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses Download PDFInfo
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- US20130126518A1 US20130126518A1 US13/671,255 US201213671255A US2013126518A1 US 20130126518 A1 US20130126518 A1 US 20130126518A1 US 201213671255 A US201213671255 A US 201213671255A US 2013126518 A1 US2013126518 A1 US 2013126518A1
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- cooling plate
- temperature
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- heater plate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Definitions
- semiconductor material processing apparatuses including vacuum processing chambers are used for performing various plasma processes, such as etching of materials on substrates.
- plasma processes such as etching of materials on substrates.
- the effectiveness of these etch processes is often dependent on the ability to control the temperature conditions at certain locations of the processing chambers.
- An exemplary embodiment of a temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber comprises a heater plate having a bottom surface adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, the top electrode having a plasma-exposed bottom surface, the heater plate including at least one heater adapted to supply heat to the top electrode to control the temperature of the top electrode; a cooling plate having a top surface adapted to be secured to and thermally isolated from a bottom surface of a top plate forming a top wall of the plasma processing chamber, the cooling plate adapted to control the temperature of the heater plate and control heat conduction between the heater plate and the top electrode; and at least one electrically and thermally conductive thermal choke located between, and in contact with, a top surface of the heater plate and a bottom surface of the cooling plate, the at least one thermal choke adapted to control heat conduction between the heater plate and the cooling plate.
- An exemplary embodiment of a showerhead electrode assembly for a plasma processing chamber comprises a top plate forming a top wall of the plasma processing chamber; a top electrode including a top surface and a plasma-exposed bottom surface; and a temperature control module comprising: a heater plate having a bottom surface secured to the top surface of the top electrode, the heater plate including at least one heater adapted to supply heat to the top electrode to control the temperature of the top electrode; a cooling plate having a top surface secured to and thermally isolated from a bottom surface of a top plate, the cooling plate adapted to control the temperature of the heater plate and control heat conduction between the heater plate and the top electrode; and at least one electrically and thermal conductive thermal choke located between, and in thermal contact with, a top surface of the heater plate and a bottom surface of the cooling plate, the at least one thermal choke adapted to control heat conduction between the heater plate and the cooling plate.
- An exemplary embodiment of a method of controlling the temperature of a top electrode of a showerhead electrode assembly in a plasma processing chamber containing a substrate support having a bottom electrode, the showerhead electrode assembly comprising a top plate forming a top wall of the plasma processing chamber, and a temperature control module located between and secured to the top plate and the top electrode is provided.
- the method comprises generating plasma in the plasma processing chamber in a gap between the top electrode and the substrate support; applying power from at least one power supply to at least one heater of a heater plate of the temperature control module to heat the top electrode; supplying a temperature-controlled liquid from at least one liquid source to liquid channels of a cooling plate of the temperature control module to control the temperature of the cooling plate; and controlling heat conduction (i) between the cooling plate and the top plate by thermally isolating the cooling plate from the top plate, (ii) between the cooling plate and the heater plate with at least one thermal choke located between the cooling plate and heater plate, and (iii) between the heater plate and the top electrode by controlling the temperature of the heater plate, to thereby maintain the top electrode at a desired temperature.
- FIG. 1 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising an exemplary embodiment of a showerhead electrode assembly including a temperature control module.
- FIG. 2 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising another exemplary embodiment of a showerhead electrode assembly including a temperature control module.
- FIG. 3 illustrates an exemplary embodiment of a thermal choke of the temperature control module shown in FIG. 2 .
- FIG. 4 illustrates an exemplary embodiment of another thermal choke of the temperature control module shown in FIG. 2 .
- FIG. 5 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising another exemplary embodiment of a showerhead electrode assembly including a temperature control module.
- FIG. 6 is a cross-sectional view of another embodiment of a heater plate including outer heater plate and inner heater plate.
- FIG. 7 illustrates the temperature versus time (ramp-up and ramp-down rate) of an exemplary embodiment of a temperature control module.
- Temperature control modules and showerhead electrode assemblies comprising embodiments of the temperature control modules are provided.
- the temperature control modules provide an integrated heating and cooling module that allows desirable control of the temperature of the showerhead electrode of the showerhead electrode assemblies.
- the temperature control modules can be thermally isolated from selected portions of the showerhead electrode assemblies, and have desirably fast response times, to allow reliable and responsive temperature control.
- FIG. 1 illustrates a capactively-coupled, radio-frequency (RF) plasma processing chamber 100 in which semiconductor substrates, e.g., silicon wafers, are processed.
- the plasma processing chamber 100 includes an exemplary embodiment of a showerhead electrode assembly 110 and a substrate support 112 (in partial view) positioned below the showerhead electrode assembly 110 with a gap between the showerhead electrode assembly 110 and the substrate support 112 where plasma is generated.
- the showerhead electrode assembly 110 comprises a top electrode 114 , an optional backing member 116 secured to the top electrode 114 , a top plate 118 and a temperature control module 120 located between the backing member 116 and top plate 118 .
- a confinement ring assembly 122 surrounds the gap between the top electrode 114 and substrate support 112 .
- the top plate 118 can be made of aluminum, or the like.
- the temperature of the top plate 118 is controlled by flowing a temperature-controlled liquid (e.g., water at a set temperature and flow rate) through liquid passages formed therein.
- the top plate 118 can form a removable top wall of the plasma processing chamber 100 .
- the confinement ring assembly 122 includes a plurality of plasma confinement rings 124 whose vertical positions are adjustable by operation of one or more lift mechanisms 126 to control the vertical gap between adjacent ones of the plasma confinement rings 124 .
- the confinement ring assembly 122 can include three lift mechanisms 126 spaced 120° apart from each other.
- the confinement rings 124 enhance confinement of plasma to the gap between the top electrode 114 and the upper surface 128 of the substrate support 112 .
- Exemplary confinement ring assemblies that can be used in the plasma processing chamber 100 are disclosed, e.g., in commonly-owned U.S. Pat. Nos. 6,019,060 and 6,984,288, and U.S. Patent Application Publication Nos. 2006/0207502 and 2006/0283552, each of which is incorporated herein by reference in its entirety.
- the substrate support 112 includes a bottom electrode and an optional electrostatic clamping electrode (ESC) for electrostatically clamping a substrate subjected to plasma processing on the upper surface 128 of the substrate support 112 .
- ESC electrostatic clamping electrode
- the top electrode 114 includes an inner electrode member 130 and an outer electrode member 132 , or electrode extension, surrounding the inner electrode member 130 .
- the inner electrode member 130 is a cylindrical plate for plasma processing of circular semiconductor substrates.
- the inner electrode member 130 can be composed of any suitable material, such as single crystal silicon, polycrystalline silicon or silicon carbide.
- the inner electrode member 130 includes multiple gas passages 133 through which process gas is injected into the gap between the top electrode 114 and substrate support 112 . Plasma is generated in the gap by supplying RF power to the top electrode 114 and/or bottom electrode.
- the outer electrode member 132 is configured to expand the diameter of the top electrode 114 for plasma processing larger-diameter substrates in the plasma processing chamber 100 .
- the inner electrode member 130 can have a diameter of 12 inches or 13 inches, and the outer electrode member 132 can be a ring having a radial width that expands the diameter of the top electrode 114 to about 15 inches to 17 inches, or even larger.
- the outer electrode member 132 can be a continuous ring (i.e., a one-piece ring), such as a poly-silicon ring.
- the outer electrode member 132 can include multiple ring segments, e.g., from two to ten segments, arranged to form a ring.
- the ring segments can be composed, e.g., of single crystal silicon, polycrystalline silicon, or silicon carbide.
- the ring segments are preferably bonded together.
- Adjacent ring segments of the outer electrode member 132 preferably have overlapping edges that are bonded to each other with a bonding material.
- the outer electrode member 132 and inner electrode member 130 can be bonded together, such as with an elastomeric material.
- the elastomeric material can be any suitable thermally and electrically conductive elastomeric material that can accommodate thermal stresses, and transfer thermal and electrical energy.
- the outer electrode member 132 can have a thickness greater than that of the inner electrode member 130 , or be vertically off-set, to form an inner step 134 extending outwardly at an angle from the plasma-exposed bottom surface 136 of the inner electrode member 130 .
- the angle is preferably an obtuse angle.
- the inner edge of the outer electrode member 132 is configured to overlap and mate with a recessed outer edge 138 formed in the inner electrode member 130 .
- the top surface of the top electrode 114 is secured to the bottom surface of the backing member 116 along a planar interface 140 .
- the backing member 116 includes a backing plate 142 secured to the top surface of the inner electrode member 130 and backing ring 144 surrounding the backing plate 142 and secured to the top surface of the outer electrode member 132 .
- a cover ring 121 is provided on the peripheral outer surface of the backing ring 144 .
- the backing plate 142 has a larger diameter than the inner electrode member 130 .
- a peripheral portion 146 of the backing plate 142 extends outward in the radial direction from the periphery of the inner electrode member 130 and is supported on a recessed surface 148 formed in the backing ring 144 .
- the inner electrode member 130 and outer electrode member 132 are secured to the backing plate 142 and backing ring 144 , respectively, by a suitable bonding technique.
- the inner electrode member 130 includes surfaces secured to the backing plate 142 , outer electrode member 132 and backing ring 144 ;
- the outer electrode member 132 includes surfaces secured to the inner electrode member 130 and backing ring 144 ;
- the backing plate 142 includes surfaces secured to the inner electrode member 130 and backing ring 144 ;
- the backing ring 144 includes surfaces secured to the backing plate 142 , outer electrode member 132 and inner electrode member 130 .
- the surfaces of the inner electrode member 130 , outer electrode member 132 , backing plate 142 and backing ring 144 can be bonded using an elastomeric bonding material that forms an elastomeric joint between the attached members.
- the elastomeric material can accommodate thermal stresses, and transfer thermal and electrical energy between the bonded members of the top electrode 114 and backing member 116 .
- Suitable elastomeric bonding materials and techniques for joining the inner electrode member 130 , outer electrode member 132 , backing plate 142 , and backing ring 144 are disclosed in commonly-owned U.S. Pat. No. 6,073,577, which is incorporated herein by reference in its entirety.
- the backing plate 142 and backing ring 144 can be composed of various materials. Suitable materials for forming the backing plate 142 include, e.g., aluminum (including aluminum and aluminum alloys, e.g., 6061 Al), graphite and silicon carbide. Aluminum backing plates can have a bare aluminum outer surface (i.e., a native oxide outer surface), or an anodized outer surface formed over all or only portions of the outer surface.
- the backing ring 144 can be composed of quartz, for example.
- the temperature control module 120 comprises a heater plate 150 secured to the backing plate 142 and backing ring 144 , a cooling plate 152 secured to the top plate 118 , and a thermal choke 154 located between and secured to the heater plate 150 and cooling plate 152 .
- the cooling plate 152 is attached to the thermal choke 154 and heater plate 150 by fasteners 190 A, which are inserted in recessed openings in the cooling plate 152 , and extend through aligned openings in the cooling plate 152 , thermal choke 154 and heater plate 150 .
- the fasteners 190 A preferably include a washer set with a locking washer and slip washer adapted to resist loosening of the fasteners 190 A due to thermal expansion and axial and radial movement of the heater plate 150 during thermal cycling of the heater plate 150 .
- the backing plate 142 includes radially-spaced gas distribution plenums 156 , 158 , 160 , 162 .
- the central plenum 156 is defined by a central recess and a cover plate 170
- the outer plenums 158 , 160 and 162 are defined by annular grooves in the backing plate 142 and by cover plates 170 .
- Adjacent pairs of the plenums 156 , 158 ; 158 , 160 ; and 160 , 162 are separated from each other by respective annular projections 166 .
- the cover plates 170 can comprise the same material as the backing plate 142 , for example.
- the cover plate 170 for the central plenum 156 preferably has a disc shape, and the cover plates 170 for the outer plenums 158 , 160 and 162 preferably have annular ring configurations
- the cover plates 170 are preferably bonded to the backing plate 142 to prevent gas leakage from the plenums 156 , 158 , 160 and 162 .
- cover plate 170 can be welded or brazed to backing plate 142 .
- Each of the plenums 156 , 158 , 160 , 162 is in fluid communication with a plurality of gas passages 135 in the backing plate 142 .
- Process gas is supplied from a gas supply 169 to the central plenum 156 via a gas passage 164 in the heater plate 150 .
- Gas is distributed to the outer plenums 158 , 160 , 162 via gas passages 165 , 167 in fluid communication with the gas supply 169 and radial gas distribution channels 168 and axial passages 171 formed in the heater plate 150 .
- the gas passages 135 in the backing plate 142 are aligned with respective gas passages 133 in the inner electrode member 130 to supply process gas from the gas supply 169 into the plasma processing chamber 100 .
- the gas passages 135 in the backing plate 142 can have a larger diameter than the gas passages 133 in the inner electrode member 130 .
- the gas passages 135 can have a diameter of about 0.04 inch, and the gas passages 133 can have a diameter of about 0.020 inch to about 0.025 inch.
- the backing ring 144 includes gas passages 147 in fluid communication with radial gas distribution channels 168 in the heater plate 150 and with gas passages in the outer electrode member 132 to supply process gas into the chamber.
- the temperature control module 120 is an integrated unit adapted to adjust and maintain control of the temperature of the top electrode 114 in the showerhead electrode assembly 110 when plasma is being generated in the plasma processing chamber (i.e., the plasma “ON” condition) and when plasma is not being generated (i.e., the plasma “OFF” condition).
- the temperature control module 120 is adapted to supply a controlled amount of heat to the top electrode 114 , and remove heat from the top electrode 114 , to maintain the top electrode 114 at a desired temperature.
- the temperature control module 120 provides reliable and repeatable control of the temperature of the plasma-exposed, bottom surface 136 of the top electrode 114 .
- a center-to-edge maximum temperature gradient of about ⁇ 30° C., or even less, can be achieved with the temperature control module 120 .
- the plasma chemistry at the bottom surface 136 can be better controlled.
- the heater plate 150 is adapted to supply heat to the top electrode 114 by thermal conduction through the backing member 116 .
- the heater plate 150 can be a machined piece or casting of metal, such as aluminum, an aluminum alloy, or the like.
- the heater plate 150 can include one or more heaters operable to provide the desired heating capacity in the heater plate 150 .
- the heater plate 150 can include radially-spaced, internal heating elements 172 within the heater plate 150 (e.g., embedded).
- the heating elements 172 can be circular and concentrically arranged, as shown. For example, in FIG.
- FIG. 1 shows six circular heating elements.
- the heating elements 172 can be symmetrically arranged with respect to each other.
- the heating elements 172 are electrically connected to a single power supply 151 , or to multiple power supplies, which supply power to the heating elements 172 .
- each heating element 172 can be connected to a separate power supply, or groups of two or more heating elements 172 can be connected to respective power supplies.
- the one or more power supplies 151 can optionally supply different amounts of power to the individual heating elements 172 (or to groups of the heating elements) to allow variable-controlled heating of different regions or zones of the heater plate 150 .
- the heater plate 150 is operable to supply a known amount of heat to the top electrode 114 in order to maintain the inner electrode member 130 and outer electrode member 132 at, or sufficiently close to, the desired temperature, e.g., a temperature set point.
- the top electrode 114 can be maintained within about ⁇ 5° C. or less of the temperature setpoint by operation of the temperature control module 120 .
- the showerhead electrode assembly 110 can include a temperature sensor arrangement of one or more temperature sensors located, e.g., on the backing member 116 .
- the respective temperature sensors can monitor the temperature at a respective portion of the top electrode 114 and supply this temperature information to a temperature controller 153 .
- the temperature controller 153 controls the at least one power supply 151 to supply power to the heating elements 172 to heat the top electrode 114 .
- the at least one power supply 151 is controlled to supply power to the heating elements 172 based on the actual and desired temperature of the top electrode 114 .
- the heater plate 150 can be activated to heat the top electrode 114 when the plasma is OFF.
- the heater plate 150 is preferably also activated as needed, but at a lower power level, when the plasma is ON, so that a desired temperature of the top electrode 114 can be maintained.
- the cooling plate 152 is adapted to cool the heater plate 150 and control heat conduction between the heater plate 150 and the inner electrode member 130 and outer electrode member 132 .
- the cooling plate 152 has a small “thermal mass” for the following reasons.
- the rate at which a body can be heated or cooled is related to the body's heat capacity, or “thermal mass”, C.
- the rate of heat transfer from the heat source to the body can be more closely controlled by reducing the thermal mass of the body.
- the cooling plate 152 can provide dynamic temperature control capabilities in the temperature control module 120 because the cooling plate 152 has a small thermal mass (so that the amount of heat, q, that must be added to or removed from the cooling plate 152 in order to change its temperature by an amount ⁇ T is reduced), and the cooling plate 152 is thermally isolated from the top plate 118 .
- the cooling plate 152 is composed of a thermally and electrically conductive material, such as aluminum, an aluminum alloy, or the like.
- the cooling plate 152 can be a single piece of material, such as a casting. In another embodiment, the cooling plate 152 can include two pieces bonded together along opposed major faces of the pieces.
- the cooling plate 152 preferably has a small volume. As shown in FIG. 1 , the cooling plate 152 can have a diameter that approximates the outer diameter of the outer electrode member 132 . For example, the cooling plate 152 can have a diameter of about 15 inches to 17 inches.
- the cooling plate 152 can have a small thickness of only about 1 inch to about 2 inch, for example.
- the cooling plate 152 is temperature controlled. As shown in FIG. 1 , the cooling plate 152 includes liquid channels 174 through which a temperature-controlled liquid is flowed from at least one liquid source 175 to cool the cooling plate 152 .
- the liquid channels 174 can be internal passages formed in a single-piece cooling plate 152 . Alternatively, the liquid channels. 174 can be passages defined between separate pieces of a multi-piece cooling plate 152 .
- the liquid can be de-ionized water, for example.
- the liquid source 175 preferably supplies a small volume of the liquid to the liquid channels 174 to allow fast cooling.
- the liquid has a desired temperature and flow rate to provide the desired heat transfer capabilities to the cooling plate 152 .
- the temperature-controlled liquid can maintain the cooling plate 152 at a temperature of about 20° C. to about 40° C., for example.
- the liquid channels 174 also decrease the mass of the cooling plate 152 , which reduces the thermal mass of the cooling plate 152 .
- the cooling capacity of the cooling plate 152 preferably exceeds heating effects on the top electrode 114 caused by plasma generated in the gap between the top electrode 114 and substrate support. This cooling capacity allows the temperature control module 120 to minimize the frequency and magnitude of overshooting of the temperature set point of the top electrode 114 when the plasma is ON.
- the cooling plate 152 is preferably thermally isolated from the top plate 118 in the showerhead electrode assembly 110 to reduce heat conduction between the cooling plate 152 and top plate 118 .
- the top plate 118 has a significantly greater thermal mass than the cooling plate 152 .
- the cooling plate 152 is thermally isolated from the top plate 118 by reducing the total contact surface area at the interface 176 between the top plate 118 and the cooling plate 152 .
- the ratio of the contact surface area at the interface 176 to the total surface area of the top surface of the cooling plate 152 facing the top plate 118 can be about 20% to 30%.
- at least one groove is formed in the bottom surface of the top plate 118 . For example, as shown in FIG.
- the at least one groove can comprise multiple, radially-spaced, concentrically-arranged grooves 180 .
- the grooves 180 can have an annular configuration.
- Adjacent grooves 180 are separated by projections 182 (which can be annular projections) on the bottom surface of the top plate 118 .
- the projections 182 are in thermal contact with the top surface of the cooling plate 152 . Heat conduction between the cooling plate 152 and the top plate 118 occurs primarily at the annular projections 182 .
- a single continuous groove (e.g., with concentric portions) can be formed in the bottom surface of the top plate 118 .
- This thermal isolation of the cooling plate 152 from the top plate 118 causes heat conduction to be primarily between the heater plate 150 and small cooling plate 152 , and not between the heater plate 150 and the top plate 118 , which has a significantly larger thermal mass than the cooling plate 152 .
- the thermal choke 154 is located between the heater plate 150 and cooling plate 152 to control heat conduction between these plates.
- the thermal choke 154 provides “thermal resistance” to heat flow from the heater plate 150 to the cooling plate 152 to allow enhanced control of the rate of heat conduction from the heater plate 150 to the cooling plate 152 .
- the meaning of the term “thermal resistance” is described below.
- the thermal choke 154 is also preferably sufficiently flexible to compensate for radial and axial expansion of the heater plate 150 caused by thermal cycling during operation of the showerhead electrode assembly 110 .
- Equation 4 the term L/kA is referred to as the “thermal resistance” of the material. Equation 4 shows that at a given value of ⁇ T, increasing the thermal resistance of the material decreases the heat transfer rate, q, along the length of the material that heat transfer occurs.
- the thermal resistance can be increased by increasing L, decreasing k and/or decreasing A.
- the thermal choke 154 is a plate having planar opposed surfaces secured to the heater plate 150 and cooling plate 152 . These members can be secured, e.g., by elastomer bonding, brazing, welding, or fasteners. As shown in FIG. 1 , seals 186 , such as O-rings, are placed between the top plate 118 and cooling plate 152 , cooling plate 152 and thermal choke 154 , and thermal choke 154 and heater plate 150 , to provide vacuum seals.
- the thermal choke 154 can be composed of the same material as the heater plate 150 and cooling plate 152 , for example.
- the thermal choke 154 can be made from anodized or non-anodized aluminum or aluminum alloys (e.g., 6061-T6 or 7075-T6 aluminum).
- the thermal choke 154 can alternatively be made of other metals, non-metallic materials or composite materials having desirable thermal conductivity and structural characteristics.
- the thermal choke 154 has a structure effective to provide the desired thermal resistance between the heater plate 150 and cooling plate 152 .
- the thermal choke 154 can have a honeycomb, perforated plate, corrugated plate, or other suitable porous structure to provide the desired thermal resistance. These exemplary structures increase “L” and/or decrease “A” in Equation 4 above, which increases the thermal resistance of the thermal choke 154 .
- the thermal choke 154 can be a laminate structure including for example, aluminum layers and at least one intermediate layer of a metallic or non-metallic thermally and electrically conductive material (e.g., a polymeric material or stainless steel) having a lower “k” value (see Equation 4) than the aluminum layers to increase the thermal resistance of the thermal choke.
- the thermal choke 154 can have a total thickness of about 0.25 inch to about 1 inch, for example.
- the top electrode 114 can be maintained at a desired temperature during and between successive substrate processing runs, so that multiple substrates can be processed more uniformly, thereby improving process yields.
- the temperature control module 120 can maintain the top electrode 114 at a temperature set point within the range of about 40° C. to about 200° C., such as at least about 100° C., at least about 150° C., or at about least 180° C.
- the desired temperature of the top electrode 114 will depend on the particular plasma process that is being run in the plasma processing chamber 110 . For example, dielectric material etch processes utilize high applied power levels to the top electrode 114 and/or bottom electrode and produce high corresponding top electrode 114 temperatures.
- the small mass of the cooling plate 152 in combination with the thermal resistance of the thermal choke 154 and thermal isolation of the cooling plate 152 from the top plate 118 , allows closer and more rapid control of the rate of heat transfer between the heater plate 150 and the cooling plate 152 , as compared to the heater plate 150 being in direct thermal contact with the top plate 118 .
- the heater plate 150 can more closely control the temperature of the top electrode 114 .
- the temperature control module 120 also provides a desirably fast response time for controlling the top electrode 114 temperature The response time is the rate at which the control module 120 ramps up during heating and ramps down during cooling when the heater plate 150 is turned on and off, respectively.
- FIG. 2 illustrates a plasma processing chamber 200 comprising another exemplary embodiment of a showerhead electrode assembly 210 .
- the showerhead electrode assembly 210 comprises a top electrode 214 , backing member 216 secured to the top electrode 214 , top plate 218 and a temperature control module 220 located between the backing member 216 and top plate 218 .
- a plasma confinement ring assembly 222 surrounds the top electrode 214 in the plasma processing chamber 200 .
- a substrate support 212 (in partial view) is disposed beneath the top electrode 214 .
- the top electrode 214 and temperature control module 220 have different structural features than the top electrode 114 and temperature control module 120 shown in FIG. 1 .
- the top electrode 214 includes an inner electrode member 230 and an outer electrode member 232 surrounding the inner electrode member 230 .
- the inner electrode member 230 is a single piece of material including a step 231 of increased thickness extending outwardly, preferably at an obtuse angle, from the bottom surface 236 of the thinner inner portion of the inner electrode member 230 .
- the inner electrode member 230 includes multiple gas passages 233 through which process gas is injected into the space (gap) between the top electrode 214 and substrate support 212 .
- the outer electrode member 232 expands the diameter of the top electrode 214 , and can be a continuous ring or include multiple ring segments.
- the outer electrode member 232 and inner electrode member 230 include mating projections 215 with a lower projection on step 231 overlapping, and preferably interlocking with, an upper projection on outer electrode 232 .
- the backing plate 242 is secured to the top surface of the inner electrode member 230 along an interface 240
- the backing ring 244 is secured to the top surface of the outer electrode member 232 .
- the backing plate 242 has approximately the same diameter as the inner electrode member 230 .
- the inner electrode member 230 and outer electrode member 232 are secured to the backing plate 242 and backing ring 244 , respectively, by a suitable bonding technique. As shown in FIG.
- the inner electrode member 230 includes surfaces secured to the backing plate 242 , outer electrode member 232 and backing ring 244 ;
- the outer electrode member 232 includes surfaces secured to the inner electrode member 230 and backing ring 244 ;
- the backing plate 242 includes surfaces secured to the inner electrode member 230 and backing ring 244 ;
- the backing ring 244 includes surfaces secured to the backing plate 242 , outer electrode member 232 and inner electrode member 230 .
- these surfaces can be bonded together using a thermally and electrically conductive elastomeric bonding material.
- the temperature control module 220 comprises a heater plate 250 attached to the backing plate 242 and backing ring 244 , and a cooling plate 252 attached to the heater plate 250 and top plate 218 .
- a cover ring 221 is provided on the radial outer surfaces of the heater plate 250 and the backing ring 244 .
- the backing plate 242 includes a plurality of gas distribution plenums 256 , 258 , 260 , 262 , each of which is in fluid communication with a plurality of gas passages 235 in the backing plate 242 .
- the central plenum 256 is defined by a central recess and a cover plate 270
- the plenums 258 , 260 , 262 are defined by annular grooves and cover plates 270 .
- the cover plates 270 are preferably bonded to the backing plate 242 . In one embodiment, cover plate 270 can be welded or brazed to backing plate 242 .
- Process gas is supplied to the central plenum 256 via a gas passage 264 .
- Adjacent pairs of the plenums 256 , 258 ; 258 , 260 ; 260 , 262 are separated by annular projections 266 on the backing plate 242 .
- Gas is supplied to the outer plenums 258 , 260 , 262 via gas passages 265 , 267 and radial gas distribution channels 268 and axial passages 271 in the heater plate 250 .
- the gas passages 235 in the backing plate 242 are aligned with respective gas passages 233 in the inner electrode member 230 to supply gas into the plasma processing chamber 200 .
- the backing ring 244 includes a plenum 245 in fluid communication with the gas distribution channels 268 in the heater plate 250 , gas passages 247 in the backing ring 244 , and gas passages 249 in the outer electrode member 232 . Gas is supplied into the chamber via the gas passages 249 .
- the heater plate 250 includes heating elements 272 adapted to supply heat in a controlled manner to the top electrode 214 through the backing member 216 .
- the heater plate 250 is operable to maintain the inner electrode member 230 and outer electrode member 232 at the desired temperature.
- the heating elements 272 are electrically connected to a single power supply 251 , or to multiple power supplies.
- a temperature sensor arrangement can be provided on the backing member 216 to monitor the temperature of the top electrode 214 and supply this temperature information to a temperature controller 253 .
- the temperature controller is adapted to control the at least one power supply 251 to supply power to the heater plate 250 to heat the inner electrode member 230 and outer electrode member 232 .
- the heater plate 250 can operate in the same manner described above in regard to the heater plate 150 .
- the cooling plate 252 is adapted to cool the heater plate 250 and control heat transfer between the heater plate 250 and top electrode 214 .
- the cooling plate 252 can provide close control of this heat transfer rate.
- the cooling plate 252 has a small mass, and is made of a thermally and electrically conductive material. As shown in FIG. 2 , the cooling plate 252 can have a diameter that is close to the diameter of the inner electrode member 230 and outer electrode member 232 .
- the cooling plate 252 can have a diameter of about 15 inches to 17 inches, and a small thickness of only about 1 inch to about 2 inch.
- the cooling plate 252 includes liquid channels 274 , into which a temperature-controlled liquid having a desired temperature is supplied from a single liquid source 275 , or from more than one liquid source.
- the temperature-controlled liquid can maintain the cooling plate 252 at a temperature of about 20° C. to about 40° C., for example.
- the cooling capacity of the cooling plate 252 is preferably sufficient to minimize overshooting of the temperature of the top electrode 214 caused by plasma heating effects.
- the cooling plate 252 is thermally isolated from the top plate 218 by at least one groove 280 formed in the bottom surface of the top plate 218 .
- the one or more grooves 280 are separated by projections 282 (e.g., annular projections) in thermal contact with the top surface of the cooling plate 252 .
- Heat is conducted between the top plate 218 and cooling plate 252 primarily via the annular projections 282 .
- the ratio of the contact surface area between the top plate 218 and cooling plate 252 at the projections to the total surface area of the top surface of the cooling plate 252 facing the top plate 218 can be about 20% to 30%, for example.
- one or more thermal chokes are placed between the heater plate 250 and cooling plate 252 to provide enhanced control of the rate of heat conduction between the heater plate 250 and cooling plate 252 .
- a plurality of thermal chokes 254 , 255 , 257 and 259 can be placed between the heater plate 250 and cooling plate 252 .
- the thermal chokes 254 , 255 , 257 and 259 are concentrically-arranged annular rings placed in respective grooves formed in the bottom surface of the cooling plate 252 .
- the rings can be one-piece, continuous rings, or can include two or more ring segments.
- Fasteners 290 A are received in aligned openings in the top plate 218 ; cooling plate 252 ; thermal chokes 254 , 255 , 257 and 259 ; heater plate 250 and backing plate 242 .
- the thermal chokes 254 , 255 , 257 and 259 can be composed of the same material as the heater plate 250 and cooling plate 252 , or of other metals or non-metallic materials having suitable thermal conductivity and structural characteristics.
- the thermal chokes 254 , 255 , 257 and 259 can be composed of stainless steels having a lower thermal conductivity than aluminum used for the heater plate 250 and/or cooling plate 252 .
- FIG. 3 shows an exemplary embodiment of the thermal choke 257 .
- the thermal chokes 254 , 255 which have different sizes than the thermal choke 257 , can have the same composition and structure as the thermal choke 257 .
- the thermal choke 257 includes radial through openings 261 for reducing the cross-sectional area for heat conduction, and thus increase the thermal resistance of the thermal choke 257 .
- the thermal choke 257 can be a porous sintered ring, e.g., a stainless steel ring, made by powder metallurgy.
- the thermal chokes 254 , 255 can also be porous sintered rings.
- the porous sintered rings can be fabricated with a desired pore structure to provide a desired thermal resistance.
- the thermal choke 257 (and thermal chokes 254 , 255 ) also include circumferentially-spaced, axially-extending openings 263 for receiving threaded fasteners 290 A.
- FIG. 4 shows an exemplary embodiment of the outermost thermal choke 259 .
- the thermal choke 259 forms part of the radial outer surface of the cooling plate 252 .
- the thermal choke 259 is preferably non-porous (i.e., has a density equal to the theoretical density of the material forming the thermal choke).
- a plurality of inwardly-extending projections include circumferentially-spaced apart, axially-extending openings 263 for receiving threaded fasteners 290 A.
- each of the thermal chokes 254 , 255 , 257 and 259 has a greater height (i.e., in the axial direction) than the height of the respective grooves formed in the cooling plate 252 so that the cooling plate 252 is supported on the thermal chokes 254 , 255 , 257 and 259 , and an axial gap 271 is defined between the bottom surface of cooling plate 252 and the top surface of the heater plate 250 .
- the gap 271 eliminates direct physical contact between the heater plate 250 and cooling plate 252 and forces heat conduction to occur between the heater plate 250 and cooling plate 252 through the thermal chokes 254 , 255 , 257 and 259 .
- the thermal chokes 254 , 255 , 257 and 259 can have an exemplary height of about 0.25 inch to about 0.75 inch, such as about 0.5 inch, and an exemplary width of about 0.5 inch to about 1 inch, such as about 0.75 inch.
- the thermal choke 254 can have an outer diameter of about 2 inches to about 4 inches
- the thermal choke 255 can have an outer diameter of about 6 inches to about 8 inches
- the thermal choke 257 can have an outer diameter of about 10 inches to about 12 inches
- the thermal choke 259 can have an outer diameter of about 15 inches to about 17 inches, for example.
- seals 286 such as O-rings, are placed between the cooling plate 252 and the top plate 218 , the cooling plate 252 and the thermal choke 259 , and the thermal choke 259 and the heater plate 250 to form vacuum seals.
- the cooling plate 252 is fastened to the heater plate 250 with threaded fasteners 290 A.
- Each of the fasteners 290 A preferably includes a washer set 273 with a locking washer and slip washer to resist loosening of the fasteners 290 A due to temperature cycling and thermal expansion and movement of the heater plate 250 .
- the small mass of the cooling plate 252 in combination with the thermal resistance provided by the thermal chokes 254 , 255 , 257 and 259 , and thermal isolation of the cooling plate 252 and top plate 218 , allows improved control of the rate of heat transfer between the heater plate 250 and the cooling plate 252 , as compared to the heater plate 250 being in direct contact with the top plate 218 .
- the temperature control module 220 allows the temperature of the top electrode 214 to be more closely controlled.
- the integrated temperature control module 220 provides a desirably fast response time for controlling the top electrode 214 temperature.
- FIG. 5 illustrates a plasma processing chamber 300 of a semiconductor material plasma processing apparatus comprising another exemplary embodiment of a showerhead electrode assembly 310 .
- the showerhead electrode assembly 310 comprises a top electrode 314 , a backing member 316 secured to the top electrode 314 , a top plate 318 and a temperature control module 320 disposed between the backing member 316 and top plate 318 .
- a confinement ring assembly 322 surrounds the top electrode 314 in the plasma processing chamber 300 .
- a substrate support 312 (shown in partial view) including a bottom electrode and optional electrostatic clamping electrode is disposed beneath the top electrode 314 .
- the illustrated showerhead electrode assembly 310 includes a backing plate 342 and backing ring 344 .
- the backing plate 342 includes plenums 356 , 358 , 360 and 362 .
- the showerhead electrode assembly 310 has the same structure as the showerhead electrode assembly 210 except for the different structure of the backing plate 342 .
- the plenums 356 , 358 , 360 and 362 have a width that increases in the axial direction toward the top electrode 314 .
- This enlargement of the width of the plenums provides sufficient area for placing seals 392 , such as O-rings, between the backing plate 342 and heater plate 350 to prevent gas leakage from the plenums, as well as provides sufficient thermal contact area between the top surface of the backing plate 342 and the bottom surface of the heater plate 350 .
- the backing plate 342 configuration of FIG. 5 facilitates the ability to clean the interior surfaces of plenums 356 , 358 , 360 and 362 without removal of an overlying cover plate (e.g., cover plates 170 / 270 from FIGS. 1 and 2 ).
- FIG. 6 illustrates an embodiment of heater plate 650 which includes outer heater plate 650 A and inner heater plate 650 B for independent temperature control over outer electrode member 632 and inner electrode member 630 .
- Outer heater plate 650 A includes heating elements 672 A and inner heater plate 650 B includes heating elements 672 B, in which heating elements 672 A and 672 B are individually connected to the same or separate power supplies.
- the outer heater plate 650 A can be secured to backing ring 644 using suitable fasteners; and the outer electrode member 632 can be bonded to backing ring 644 .
- the inner heater plate 650 B can be secured to backing plate 642 by suitable fasteners; and the inner electrode member 630 can be bonded to backing plate 642 .
- the embodiment of FIG. 6 provides temperature control of outer electrode backing member 632 independently of inner electrode member 630 . It should be noted that heater plate 650 of FIG. 6 can be used in any of the embodiments of FIG. 1 , 2 or 5 .
- FIG. 7 shows the temperature versus time response for an exemplary embodiment of a showerhead electrode assembly including a top electrode including an inner electrode member, an outer electrode member, a backing plate and backing ring attached to the inner and outer electrode members, and a temperate control module attached to the backing plate and backing ring and to a top plate.
- the temperature control module included thermal choke rings between the cooling plate and heater plate.
- the thermal choke rings included a center stainless steel ring, an outermost stainless steel ring, and an aluminum ring between the center and outermost rings.
- the heater power was 7 kW, a coolant at a temperature was flowed through the cooling plate, the heater was on for about 17 minutes and off for about 17 minutes.
- the temperature set point of the top electrode was 200° C.
- the response time for embodiments of the temperature control modules that include one or more thermal choke rings located between the cooling plate and heater plate can be optimized to the desired operating range by optimizing the design (configuration and composition) of the thermal choke ring(s) to control heat conduction between these plates in the temperature control modules.
- the configuration and composition of the thermal choke plate can be optimized to control heat conduction between the cooling plate and heater plate.
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Abstract
A temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber includes a heater plate adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, and which supplies heat to the top electrode to control the temperature of the top electrode; a cooling plate adapted to be secured to and thermally isolated from a surface of a top plate of the showerhead electrode assembly, and to cool the heater plate and control heat conduction between the top electrode and heater plate; and at least one thermal choke adapted to control heat conduction between the heater plate and cooling plate.
Description
- This application claims priority under 35 U.S.C. 119 to U.S. Provisional Application No. 60/960,331 entitled TEMPERATURE CONTROL MODULES FOR SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES and filed on Sep. 25, 2007, the entire content of which is hereby incorporated by reference.
- In the field of semiconductor material processing, semiconductor material processing apparatuses including vacuum processing chambers are used for performing various plasma processes, such as etching of materials on substrates. The effectiveness of these etch processes is often dependent on the ability to control the temperature conditions at certain locations of the processing chambers.
- An exemplary embodiment of a temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber comprises a heater plate having a bottom surface adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, the top electrode having a plasma-exposed bottom surface, the heater plate including at least one heater adapted to supply heat to the top electrode to control the temperature of the top electrode; a cooling plate having a top surface adapted to be secured to and thermally isolated from a bottom surface of a top plate forming a top wall of the plasma processing chamber, the cooling plate adapted to control the temperature of the heater plate and control heat conduction between the heater plate and the top electrode; and at least one electrically and thermally conductive thermal choke located between, and in contact with, a top surface of the heater plate and a bottom surface of the cooling plate, the at least one thermal choke adapted to control heat conduction between the heater plate and the cooling plate.
- An exemplary embodiment of a showerhead electrode assembly for a plasma processing chamber comprises a top plate forming a top wall of the plasma processing chamber; a top electrode including a top surface and a plasma-exposed bottom surface; and a temperature control module comprising: a heater plate having a bottom surface secured to the top surface of the top electrode, the heater plate including at least one heater adapted to supply heat to the top electrode to control the temperature of the top electrode; a cooling plate having a top surface secured to and thermally isolated from a bottom surface of a top plate, the cooling plate adapted to control the temperature of the heater plate and control heat conduction between the heater plate and the top electrode; and at least one electrically and thermal conductive thermal choke located between, and in thermal contact with, a top surface of the heater plate and a bottom surface of the cooling plate, the at least one thermal choke adapted to control heat conduction between the heater plate and the cooling plate.
- An exemplary embodiment of a method of controlling the temperature of a top electrode of a showerhead electrode assembly in a plasma processing chamber containing a substrate support having a bottom electrode, the showerhead electrode assembly comprising a top plate forming a top wall of the plasma processing chamber, and a temperature control module located between and secured to the top plate and the top electrode is provided. The method comprises generating plasma in the plasma processing chamber in a gap between the top electrode and the substrate support; applying power from at least one power supply to at least one heater of a heater plate of the temperature control module to heat the top electrode; supplying a temperature-controlled liquid from at least one liquid source to liquid channels of a cooling plate of the temperature control module to control the temperature of the cooling plate; and controlling heat conduction (i) between the cooling plate and the top plate by thermally isolating the cooling plate from the top plate, (ii) between the cooling plate and the heater plate with at least one thermal choke located between the cooling plate and heater plate, and (iii) between the heater plate and the top electrode by controlling the temperature of the heater plate, to thereby maintain the top electrode at a desired temperature.
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FIG. 1 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising an exemplary embodiment of a showerhead electrode assembly including a temperature control module. -
FIG. 2 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising another exemplary embodiment of a showerhead electrode assembly including a temperature control module. -
FIG. 3 illustrates an exemplary embodiment of a thermal choke of the temperature control module shown inFIG. 2 . -
FIG. 4 illustrates an exemplary embodiment of another thermal choke of the temperature control module shown inFIG. 2 . -
FIG. 5 is a cross-sectional view of a plasma processing chamber of a semiconductor material processing apparatus comprising another exemplary embodiment of a showerhead electrode assembly including a temperature control module. -
FIG. 6 is a cross-sectional view of another embodiment of a heater plate including outer heater plate and inner heater plate. -
FIG. 7 illustrates the temperature versus time (ramp-up and ramp-down rate) of an exemplary embodiment of a temperature control module. - Temperature control modules and showerhead electrode assemblies comprising embodiments of the temperature control modules are provided. The temperature control modules provide an integrated heating and cooling module that allows desirable control of the temperature of the showerhead electrode of the showerhead electrode assemblies. The temperature control modules can be thermally isolated from selected portions of the showerhead electrode assemblies, and have desirably fast response times, to allow reliable and responsive temperature control.
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FIG. 1 illustrates a capactively-coupled, radio-frequency (RF)plasma processing chamber 100 in which semiconductor substrates, e.g., silicon wafers, are processed. Theplasma processing chamber 100 includes an exemplary embodiment of ashowerhead electrode assembly 110 and a substrate support 112 (in partial view) positioned below theshowerhead electrode assembly 110 with a gap between theshowerhead electrode assembly 110 and thesubstrate support 112 where plasma is generated. Theshowerhead electrode assembly 110 comprises atop electrode 114, anoptional backing member 116 secured to thetop electrode 114, atop plate 118 and atemperature control module 120 located between thebacking member 116 andtop plate 118. Aconfinement ring assembly 122 surrounds the gap between thetop electrode 114 andsubstrate support 112. - The
top plate 118 can be made of aluminum, or the like. Optionally, the temperature of thetop plate 118 is controlled by flowing a temperature-controlled liquid (e.g., water at a set temperature and flow rate) through liquid passages formed therein. Thetop plate 118 can form a removable top wall of theplasma processing chamber 100. - The
confinement ring assembly 122 includes a plurality ofplasma confinement rings 124 whose vertical positions are adjustable by operation of one ormore lift mechanisms 126 to control the vertical gap between adjacent ones of theplasma confinement rings 124. For example, theconfinement ring assembly 122 can include threelift mechanisms 126 spaced 120° apart from each other. Theconfinement rings 124 enhance confinement of plasma to the gap between thetop electrode 114 and theupper surface 128 of thesubstrate support 112. Exemplary confinement ring assemblies that can be used in theplasma processing chamber 100 are disclosed, e.g., in commonly-owned U.S. Pat. Nos. 6,019,060 and 6,984,288, and U.S. Patent Application Publication Nos. 2006/0207502 and 2006/0283552, each of which is incorporated herein by reference in its entirety. - The
substrate support 112 includes a bottom electrode and an optional electrostatic clamping electrode (ESC) for electrostatically clamping a substrate subjected to plasma processing on theupper surface 128 of thesubstrate support 112. - In the embodiment, the
top electrode 114 includes aninner electrode member 130 and anouter electrode member 132, or electrode extension, surrounding theinner electrode member 130. Theinner electrode member 130 is a cylindrical plate for plasma processing of circular semiconductor substrates. Theinner electrode member 130 can be composed of any suitable material, such as single crystal silicon, polycrystalline silicon or silicon carbide. Theinner electrode member 130 includesmultiple gas passages 133 through which process gas is injected into the gap between thetop electrode 114 andsubstrate support 112. Plasma is generated in the gap by supplying RF power to thetop electrode 114 and/or bottom electrode. - The
outer electrode member 132 is configured to expand the diameter of thetop electrode 114 for plasma processing larger-diameter substrates in theplasma processing chamber 100. For example, theinner electrode member 130 can have a diameter of 12 inches or 13 inches, and theouter electrode member 132 can be a ring having a radial width that expands the diameter of thetop electrode 114 to about 15 inches to 17 inches, or even larger. - The
outer electrode member 132 can be a continuous ring (i.e., a one-piece ring), such as a poly-silicon ring. Alternatively, theouter electrode member 132 can include multiple ring segments, e.g., from two to ten segments, arranged to form a ring. The ring segments can be composed, e.g., of single crystal silicon, polycrystalline silicon, or silicon carbide. The ring segments are preferably bonded together. Adjacent ring segments of theouter electrode member 132 preferably have overlapping edges that are bonded to each other with a bonding material. Theouter electrode member 132 andinner electrode member 130 can be bonded together, such as with an elastomeric material. The elastomeric material can be any suitable thermally and electrically conductive elastomeric material that can accommodate thermal stresses, and transfer thermal and electrical energy. - As shown in
FIG. 1 , theouter electrode member 132 can have a thickness greater than that of theinner electrode member 130, or be vertically off-set, to form aninner step 134 extending outwardly at an angle from the plasma-exposedbottom surface 136 of theinner electrode member 130. The angle is preferably an obtuse angle. As also shown inFIG. 1 , the inner edge of theouter electrode member 132 is configured to overlap and mate with a recessedouter edge 138 formed in theinner electrode member 130. - In the embodiment, the top surface of the
top electrode 114 is secured to the bottom surface of thebacking member 116 along aplanar interface 140. Thebacking member 116 includes abacking plate 142 secured to the top surface of theinner electrode member 130 andbacking ring 144 surrounding thebacking plate 142 and secured to the top surface of theouter electrode member 132. Acover ring 121 is provided on the peripheral outer surface of thebacking ring 144. In the embodiment, thebacking plate 142 has a larger diameter than theinner electrode member 130. Aperipheral portion 146 of thebacking plate 142 extends outward in the radial direction from the periphery of theinner electrode member 130 and is supported on arecessed surface 148 formed in thebacking ring 144. - The
inner electrode member 130 andouter electrode member 132 are secured to thebacking plate 142 andbacking ring 144, respectively, by a suitable bonding technique. As shown inFIG. 1 , theinner electrode member 130 includes surfaces secured to thebacking plate 142,outer electrode member 132 andbacking ring 144; theouter electrode member 132 includes surfaces secured to theinner electrode member 130 andbacking ring 144; thebacking plate 142 includes surfaces secured to theinner electrode member 130 andbacking ring 144; and thebacking ring 144 includes surfaces secured to thebacking plate 142,outer electrode member 132 andinner electrode member 130. For example, the surfaces of theinner electrode member 130,outer electrode member 132,backing plate 142 andbacking ring 144 can be bonded using an elastomeric bonding material that forms an elastomeric joint between the attached members. The elastomeric material can accommodate thermal stresses, and transfer thermal and electrical energy between the bonded members of thetop electrode 114 andbacking member 116. Suitable elastomeric bonding materials and techniques for joining theinner electrode member 130,outer electrode member 132,backing plate 142, andbacking ring 144 are disclosed in commonly-owned U.S. Pat. No. 6,073,577, which is incorporated herein by reference in its entirety. - The
backing plate 142 andbacking ring 144 can be composed of various materials. Suitable materials for forming thebacking plate 142 include, e.g., aluminum (including aluminum and aluminum alloys, e.g., 6061 Al), graphite and silicon carbide. Aluminum backing plates can have a bare aluminum outer surface (i.e., a native oxide outer surface), or an anodized outer surface formed over all or only portions of the outer surface. Thebacking ring 144 can be composed of quartz, for example. - In the embodiment, the
temperature control module 120 comprises aheater plate 150 secured to thebacking plate 142 andbacking ring 144, acooling plate 152 secured to thetop plate 118, and athermal choke 154 located between and secured to theheater plate 150 andcooling plate 152. Thecooling plate 152 is attached to thethermal choke 154 andheater plate 150 byfasteners 190A, which are inserted in recessed openings in thecooling plate 152, and extend through aligned openings in thecooling plate 152,thermal choke 154 andheater plate 150. Thefasteners 190A preferably include a washer set with a locking washer and slip washer adapted to resist loosening of thefasteners 190A due to thermal expansion and axial and radial movement of theheater plate 150 during thermal cycling of theheater plate 150. - The
backing plate 142 includes radially-spacedgas distribution plenums central plenum 156 is defined by a central recess and acover plate 170, and theouter plenums backing plate 142 and bycover plates 170. Adjacent pairs of theplenums annular projections 166. Thecover plates 170 can comprise the same material as thebacking plate 142, for example. Thecover plate 170 for thecentral plenum 156 preferably has a disc shape, and thecover plates 170 for theouter plenums cover plates 170 are preferably bonded to thebacking plate 142 to prevent gas leakage from theplenums cover plate 170 can be welded or brazed tobacking plate 142. - Each of the
plenums gas passages 135 in thebacking plate 142. Process gas is supplied from agas supply 169 to thecentral plenum 156 via agas passage 164 in theheater plate 150. Gas is distributed to theouter plenums gas passages gas supply 169 and radialgas distribution channels 168 andaxial passages 171 formed in theheater plate 150. - The
gas passages 135 in thebacking plate 142 are aligned withrespective gas passages 133 in theinner electrode member 130 to supply process gas from thegas supply 169 into theplasma processing chamber 100. As shown, thegas passages 135 in thebacking plate 142 can have a larger diameter than thegas passages 133 in theinner electrode member 130. For example, thegas passages 135 can have a diameter of about 0.04 inch, and thegas passages 133 can have a diameter of about 0.020 inch to about 0.025 inch. Thebacking ring 144 includesgas passages 147 in fluid communication with radialgas distribution channels 168 in theheater plate 150 and with gas passages in theouter electrode member 132 to supply process gas into the chamber. - The
temperature control module 120 is an integrated unit adapted to adjust and maintain control of the temperature of thetop electrode 114 in theshowerhead electrode assembly 110 when plasma is being generated in the plasma processing chamber (i.e., the plasma “ON” condition) and when plasma is not being generated (i.e., the plasma “OFF” condition). Thetemperature control module 120 is adapted to supply a controlled amount of heat to thetop electrode 114, and remove heat from thetop electrode 114, to maintain thetop electrode 114 at a desired temperature. Thetemperature control module 120 provides reliable and repeatable control of the temperature of the plasma-exposed,bottom surface 136 of thetop electrode 114. For example, for the electrode, a center-to-edge maximum temperature gradient of about ±30° C., or even less, can be achieved with thetemperature control module 120. By more closely controlling the temperature of, and radial temperature gradient across, thebottom surface 136 of thetop electrode 114, the plasma chemistry at thebottom surface 136 can be better controlled. - The
heater plate 150 is adapted to supply heat to thetop electrode 114 by thermal conduction through thebacking member 116. Theheater plate 150 can be a machined piece or casting of metal, such as aluminum, an aluminum alloy, or the like. Theheater plate 150 can include one or more heaters operable to provide the desired heating capacity in theheater plate 150. As shown inFIG. 1 , theheater plate 150 can include radially-spaced,internal heating elements 172 within the heater plate 150 (e.g., embedded). Theheating elements 172 can be circular and concentrically arranged, as shown. For example, inFIG. 1 , the central circular heating element is depicted by the two cross-sections of theheating element 172 disposed over theplenum 156, and the outermost circular heating element is depicted by the twooutermost heating elements 172 located below seals 186.FIG. 1 shows six circular heating elements. Theheating elements 172 can be symmetrically arranged with respect to each other. Theheating elements 172 are electrically connected to asingle power supply 151, or to multiple power supplies, which supply power to theheating elements 172. For example, eachheating element 172 can be connected to a separate power supply, or groups of two ormore heating elements 172 can be connected to respective power supplies. The one ormore power supplies 151 can optionally supply different amounts of power to the individual heating elements 172 (or to groups of the heating elements) to allow variable-controlled heating of different regions or zones of theheater plate 150. For example, during operation of theshowerhead electrode assembly 110, theheater plate 150 is operable to supply a known amount of heat to thetop electrode 114 in order to maintain theinner electrode member 130 andouter electrode member 132 at, or sufficiently close to, the desired temperature, e.g., a temperature set point. For example, thetop electrode 114 can be maintained within about ±5° C. or less of the temperature setpoint by operation of thetemperature control module 120. - The
showerhead electrode assembly 110 can include a temperature sensor arrangement of one or more temperature sensors located, e.g., on thebacking member 116. The respective temperature sensors can monitor the temperature at a respective portion of thetop electrode 114 and supply this temperature information to atemperature controller 153. Thetemperature controller 153 controls the at least onepower supply 151 to supply power to theheating elements 172 to heat thetop electrode 114. The at least onepower supply 151 is controlled to supply power to theheating elements 172 based on the actual and desired temperature of thetop electrode 114. For example, prior to plasma etching of a semiconductor substrate, theheater plate 150 can be activated to heat thetop electrode 114 when the plasma is OFF. Theheater plate 150 is preferably also activated as needed, but at a lower power level, when the plasma is ON, so that a desired temperature of thetop electrode 114 can be maintained. - In the
temperature control module 120, thecooling plate 152 is adapted to cool theheater plate 150 and control heat conduction between theheater plate 150 and theinner electrode member 130 andouter electrode member 132. Thecooling plate 152 has a small “thermal mass” for the following reasons. - The rate at which a body can be heated or cooled is related to the body's heat capacity, or “thermal mass”, C. The thermal mass equals the product of the specific heat, c, of the material of the body, and the mass, m, of the body, i.e., C=c·m (Equation 1). Accordingly, the thermal mass of a body can be varied by changing its mass, e.g., by changing the volume of the material forming the body by making the body smaller and/or porous. Also, the amount of heat, q, that needs to be added to a body from a heat source by heating the body, or given off by the body by cooling the body, in order to change the body's temperature by an amount ΔT is given by: q=mcΔT (Equation 2). Thus, as the thermal mass of a body is decreased, the amount of heat, q, that must be added to or removed from the body in order to change the body's temperature by an amount ΔT is also decreased.
- When the body is in physical contact with a heat source such that heat is transferred from the heat source to the body by conduction, when the temperature of the body increases when it absorbs heat, the temperature difference between the contact surfaces of the heat source and the body will decrease, which, in turn, will reduce the rate of heat transfer from the heat source to the body. Accordingly, the rate of heat transfer from the heat source to the body can be more closely controlled by reducing the thermal mass of the body.
- The
cooling plate 152 can provide dynamic temperature control capabilities in thetemperature control module 120 because thecooling plate 152 has a small thermal mass (so that the amount of heat, q, that must be added to or removed from thecooling plate 152 in order to change its temperature by an amount ΔT is reduced), and thecooling plate 152 is thermally isolated from thetop plate 118. - The
cooling plate 152 is composed of a thermally and electrically conductive material, such as aluminum, an aluminum alloy, or the like. Thecooling plate 152 can be a single piece of material, such as a casting. In another embodiment, thecooling plate 152 can include two pieces bonded together along opposed major faces of the pieces. Thecooling plate 152 preferably has a small volume. As shown inFIG. 1 , thecooling plate 152 can have a diameter that approximates the outer diameter of theouter electrode member 132. For example, thecooling plate 152 can have a diameter of about 15 inches to 17 inches. Thecooling plate 152 can have a small thickness of only about 1 inch to about 2 inch, for example. - The
cooling plate 152 is temperature controlled. As shown inFIG. 1 , thecooling plate 152 includesliquid channels 174 through which a temperature-controlled liquid is flowed from at least oneliquid source 175 to cool thecooling plate 152. Theliquid channels 174 can be internal passages formed in a single-piece cooling plate 152. Alternatively, the liquid channels. 174 can be passages defined between separate pieces of amulti-piece cooling plate 152. The liquid can be de-ionized water, for example. Theliquid source 175 preferably supplies a small volume of the liquid to theliquid channels 174 to allow fast cooling. The liquid has a desired temperature and flow rate to provide the desired heat transfer capabilities to thecooling plate 152. The temperature-controlled liquid can maintain thecooling plate 152 at a temperature of about 20° C. to about 40° C., for example. Theliquid channels 174 also decrease the mass of thecooling plate 152, which reduces the thermal mass of thecooling plate 152. In thetemperature control module 120, the cooling capacity of thecooling plate 152 preferably exceeds heating effects on thetop electrode 114 caused by plasma generated in the gap between thetop electrode 114 and substrate support. This cooling capacity allows thetemperature control module 120 to minimize the frequency and magnitude of overshooting of the temperature set point of thetop electrode 114 when the plasma is ON. - In addition to having a small mass, the
cooling plate 152 is preferably thermally isolated from thetop plate 118 in theshowerhead electrode assembly 110 to reduce heat conduction between the coolingplate 152 andtop plate 118. Thetop plate 118 has a significantly greater thermal mass than thecooling plate 152. In the embodiment, thecooling plate 152 is thermally isolated from thetop plate 118 by reducing the total contact surface area at theinterface 176 between thetop plate 118 and thecooling plate 152. For example, the ratio of the contact surface area at theinterface 176 to the total surface area of the top surface of thecooling plate 152 facing thetop plate 118 can be about 20% to 30%. In the embodiment, at least one groove is formed in the bottom surface of thetop plate 118. For example, as shown inFIG. 1 , the at least one groove can comprise multiple, radially-spaced, concentrically-arrangedgrooves 180. Thegrooves 180 can have an annular configuration.Adjacent grooves 180 are separated by projections 182 (which can be annular projections) on the bottom surface of thetop plate 118. Theprojections 182 are in thermal contact with the top surface of thecooling plate 152. Heat conduction between the coolingplate 152 and thetop plate 118 occurs primarily at theannular projections 182. Alternatively, a single continuous groove (e.g., with concentric portions) can be formed in the bottom surface of thetop plate 118. This thermal isolation of thecooling plate 152 from thetop plate 118 causes heat conduction to be primarily between theheater plate 150 andsmall cooling plate 152, and not between theheater plate 150 and thetop plate 118, which has a significantly larger thermal mass than thecooling plate 152. - In the embodiment, the
thermal choke 154 is located between theheater plate 150 andcooling plate 152 to control heat conduction between these plates. Thethermal choke 154 provides “thermal resistance” to heat flow from theheater plate 150 to thecooling plate 152 to allow enhanced control of the rate of heat conduction from theheater plate 150 to thecooling plate 152. The meaning of the term “thermal resistance” is described below. Thethermal choke 154 is also preferably sufficiently flexible to compensate for radial and axial expansion of theheater plate 150 caused by thermal cycling during operation of theshowerhead electrode assembly 110. - For one-dimensional, steady-state heat transfer conditions, the heat transfer rate, q, across a material is given by: q=kA(T1−T2)/L (Equation 3), where k is the thermal conductivity of the material, A is the cross-sectional area of the material in the direction perpendicular to the direction of heat transfer; T1 is the temperature at one face of the material and T2 is the temperature at an opposite face of the material (ΔT=T1−T2, where ΔT can be positive or negative); and L is the length of the material along which the heat transfer occurs. Equation 3 can be rearranged as: q=ΔT/(L/kA) (Equation 4). In Equation 4, the term L/kA is referred to as the “thermal resistance” of the material. Equation 4 shows that at a given value of ΔT, increasing the thermal resistance of the material decreases the heat transfer rate, q, along the length of the material that heat transfer occurs. The thermal resistance can be increased by increasing L, decreasing k and/or decreasing A.
- In the embodiment, the
thermal choke 154 is a plate having planar opposed surfaces secured to theheater plate 150 andcooling plate 152. These members can be secured, e.g., by elastomer bonding, brazing, welding, or fasteners. As shown inFIG. 1 , seals 186, such as O-rings, are placed between thetop plate 118 andcooling plate 152, coolingplate 152 andthermal choke 154, andthermal choke 154 andheater plate 150, to provide vacuum seals. - The
thermal choke 154 can be composed of the same material as theheater plate 150 andcooling plate 152, for example. For example, thethermal choke 154 can be made from anodized or non-anodized aluminum or aluminum alloys (e.g., 6061-T6 or 7075-T6 aluminum). Thethermal choke 154 can alternatively be made of other metals, non-metallic materials or composite materials having desirable thermal conductivity and structural characteristics. Thethermal choke 154 has a structure effective to provide the desired thermal resistance between theheater plate 150 andcooling plate 152. For example, thethermal choke 154 can have a honeycomb, perforated plate, corrugated plate, or other suitable porous structure to provide the desired thermal resistance. These exemplary structures increase “L” and/or decrease “A” in Equation 4 above, which increases the thermal resistance of thethermal choke 154. - In another embodiment, the
thermal choke 154 can be a laminate structure including for example, aluminum layers and at least one intermediate layer of a metallic or non-metallic thermally and electrically conductive material (e.g., a polymeric material or stainless steel) having a lower “k” value (see Equation 4) than the aluminum layers to increase the thermal resistance of the thermal choke. Thethermal choke 154 can have a total thickness of about 0.25 inch to about 1 inch, for example. - By operation of the
temperature control module 120, thetop electrode 114 can be maintained at a desired temperature during and between successive substrate processing runs, so that multiple substrates can be processed more uniformly, thereby improving process yields. In an exemplary embodiment, thetemperature control module 120 can maintain thetop electrode 114 at a temperature set point within the range of about 40° C. to about 200° C., such as at least about 100° C., at least about 150° C., or at about least 180° C. The desired temperature of thetop electrode 114 will depend on the particular plasma process that is being run in theplasma processing chamber 110. For example, dielectric material etch processes utilize high applied power levels to thetop electrode 114 and/or bottom electrode and produce high correspondingtop electrode 114 temperatures. - The small mass of the
cooling plate 152, in combination with the thermal resistance of thethermal choke 154 and thermal isolation of thecooling plate 152 from thetop plate 118, allows closer and more rapid control of the rate of heat transfer between theheater plate 150 and thecooling plate 152, as compared to theheater plate 150 being in direct thermal contact with thetop plate 118. By improving the control of heat conduction between theheater plate 150 and thecooling plate 152, theheater plate 150 can more closely control the temperature of thetop electrode 114. Thetemperature control module 120 also provides a desirably fast response time for controlling thetop electrode 114 temperature The response time is the rate at which thecontrol module 120 ramps up during heating and ramps down during cooling when theheater plate 150 is turned on and off, respectively. -
FIG. 2 illustrates aplasma processing chamber 200 comprising another exemplary embodiment of ashowerhead electrode assembly 210. As shown inFIG. 2 , theshowerhead electrode assembly 210 comprises atop electrode 214, backingmember 216 secured to thetop electrode 214,top plate 218 and atemperature control module 220 located between the backingmember 216 andtop plate 218. A plasmaconfinement ring assembly 222 surrounds thetop electrode 214 in theplasma processing chamber 200. A substrate support 212 (in partial view) is disposed beneath thetop electrode 214. As described below, thetop electrode 214 andtemperature control module 220 have different structural features than thetop electrode 114 andtemperature control module 120 shown inFIG. 1 . - In the embodiment shown in
FIG. 2 , thetop electrode 214 includes aninner electrode member 230 and anouter electrode member 232 surrounding theinner electrode member 230. Theinner electrode member 230 is a single piece of material including astep 231 of increased thickness extending outwardly, preferably at an obtuse angle, from thebottom surface 236 of the thinner inner portion of theinner electrode member 230. Theinner electrode member 230 includesmultiple gas passages 233 through which process gas is injected into the space (gap) between thetop electrode 214 andsubstrate support 212. Theouter electrode member 232 expands the diameter of thetop electrode 214, and can be a continuous ring or include multiple ring segments. As shown inFIG. 2 , theouter electrode member 232 andinner electrode member 230 includemating projections 215 with a lower projection onstep 231 overlapping, and preferably interlocking with, an upper projection onouter electrode 232. - In the embodiment, the
backing plate 242 is secured to the top surface of theinner electrode member 230 along aninterface 240, and thebacking ring 244 is secured to the top surface of theouter electrode member 232. As shown, thebacking plate 242 has approximately the same diameter as theinner electrode member 230. Theinner electrode member 230 andouter electrode member 232 are secured to thebacking plate 242 andbacking ring 244, respectively, by a suitable bonding technique. As shown inFIG. 2 , theinner electrode member 230 includes surfaces secured to thebacking plate 242,outer electrode member 232 andbacking ring 244; theouter electrode member 232 includes surfaces secured to theinner electrode member 230 andbacking ring 244; thebacking plate 242 includes surfaces secured to theinner electrode member 230 andbacking ring 244; and thebacking ring 244 includes surfaces secured to thebacking plate 242,outer electrode member 232 andinner electrode member 230. For example, these surfaces can be bonded together using a thermally and electrically conductive elastomeric bonding material. - The
temperature control module 220 comprises aheater plate 250 attached to thebacking plate 242 andbacking ring 244, and acooling plate 252 attached to theheater plate 250 andtop plate 218. Acover ring 221 is provided on the radial outer surfaces of theheater plate 250 and thebacking ring 244. - The
backing plate 242 includes a plurality ofgas distribution plenums gas passages 235 in thebacking plate 242. Thecentral plenum 256 is defined by a central recess and acover plate 270, and theplenums plates 270. Thecover plates 270 are preferably bonded to thebacking plate 242. In one embodiment,cover plate 270 can be welded or brazed tobacking plate 242. Process gas is supplied to thecentral plenum 256 via agas passage 264. Adjacent pairs of theplenums annular projections 266 on thebacking plate 242. Gas is supplied to theouter plenums gas passages axial passages 271 in theheater plate 250. - The
gas passages 235 in thebacking plate 242 are aligned withrespective gas passages 233 in theinner electrode member 230 to supply gas into theplasma processing chamber 200. Thebacking ring 244 includes aplenum 245 in fluid communication with the gas distribution channels 268 in theheater plate 250,gas passages 247 in thebacking ring 244, andgas passages 249 in theouter electrode member 232. Gas is supplied into the chamber via thegas passages 249. - The
heater plate 250 includesheating elements 272 adapted to supply heat in a controlled manner to thetop electrode 214 through thebacking member 216. Theheater plate 250 is operable to maintain theinner electrode member 230 andouter electrode member 232 at the desired temperature. Theheating elements 272 are electrically connected to asingle power supply 251, or to multiple power supplies. A temperature sensor arrangement can be provided on thebacking member 216 to monitor the temperature of thetop electrode 214 and supply this temperature information to atemperature controller 253. The temperature controller is adapted to control the at least onepower supply 251 to supply power to theheater plate 250 to heat theinner electrode member 230 andouter electrode member 232. Theheater plate 250 can operate in the same manner described above in regard to theheater plate 150. - As described above, the
cooling plate 252 is adapted to cool theheater plate 250 and control heat transfer between theheater plate 250 andtop electrode 214. Thecooling plate 252 can provide close control of this heat transfer rate. Thecooling plate 252 has a small mass, and is made of a thermally and electrically conductive material. As shown inFIG. 2 , thecooling plate 252 can have a diameter that is close to the diameter of theinner electrode member 230 andouter electrode member 232. For example, thecooling plate 252 can have a diameter of about 15 inches to 17 inches, and a small thickness of only about 1 inch to about 2 inch. - The
cooling plate 252 includesliquid channels 274, into which a temperature-controlled liquid having a desired temperature is supplied from a singleliquid source 275, or from more than one liquid source. The temperature-controlled liquid can maintain thecooling plate 252 at a temperature of about 20° C. to about 40° C., for example. The cooling capacity of thecooling plate 252 is preferably sufficient to minimize overshooting of the temperature of thetop electrode 214 caused by plasma heating effects. - The
cooling plate 252 is thermally isolated from thetop plate 218 by at least onegroove 280 formed in the bottom surface of thetop plate 218. The one ormore grooves 280 are separated by projections 282 (e.g., annular projections) in thermal contact with the top surface of thecooling plate 252. Heat is conducted between thetop plate 218 andcooling plate 252 primarily via theannular projections 282. The ratio of the contact surface area between thetop plate 218 andcooling plate 252 at the projections to the total surface area of the top surface of thecooling plate 252 facing thetop plate 218 can be about 20% to 30%, for example. - In this embodiment, one or more thermal chokes are placed between the
heater plate 250 andcooling plate 252 to provide enhanced control of the rate of heat conduction between theheater plate 250 andcooling plate 252. As shown inFIG. 2 , a plurality ofthermal chokes heater plate 250 andcooling plate 252. The thermal chokes 254, 255, 257 and 259 are concentrically-arranged annular rings placed in respective grooves formed in the bottom surface of thecooling plate 252. The rings can be one-piece, continuous rings, or can include two or more ring segments.Fasteners 290A are received in aligned openings in thetop plate 218; coolingplate 252;thermal chokes heater plate 250 andbacking plate 242. The thermal chokes 254, 255, 257 and 259 can be composed of the same material as theheater plate 250 andcooling plate 252, or of other metals or non-metallic materials having suitable thermal conductivity and structural characteristics. For example, thethermal chokes heater plate 250 and/orcooling plate 252. -
FIG. 3 shows an exemplary embodiment of thethermal choke 257. The thermal chokes 254, 255, which have different sizes than thethermal choke 257, can have the same composition and structure as thethermal choke 257. As shown inFIG. 3 , thethermal choke 257 includes radial throughopenings 261 for reducing the cross-sectional area for heat conduction, and thus increase the thermal resistance of thethermal choke 257. In another embodiment, thethermal choke 257 can be a porous sintered ring, e.g., a stainless steel ring, made by powder metallurgy. The thermal chokes 254, 255 can also be porous sintered rings. The porous sintered rings can be fabricated with a desired pore structure to provide a desired thermal resistance. The thermal choke 257 (andthermal chokes 254, 255) also include circumferentially-spaced, axially-extendingopenings 263 for receiving threadedfasteners 290A. -
FIG. 4 shows an exemplary embodiment of the outermostthermal choke 259. As shown inFIG. 2 , thethermal choke 259 forms part of the radial outer surface of thecooling plate 252. Thethermal choke 259 is preferably non-porous (i.e., has a density equal to the theoretical density of the material forming the thermal choke). A plurality of inwardly-extending projections include circumferentially-spaced apart, axially-extendingopenings 263 for receiving threadedfasteners 290A. - As shown in
FIG. 2 , each of thethermal chokes cooling plate 252 so that thecooling plate 252 is supported on thethermal chokes axial gap 271 is defined between the bottom surface of coolingplate 252 and the top surface of theheater plate 250. Thegap 271 eliminates direct physical contact between theheater plate 250 andcooling plate 252 and forces heat conduction to occur between theheater plate 250 andcooling plate 252 through thethermal chokes - The thermal chokes 254, 255, 257 and 259 can have an exemplary height of about 0.25 inch to about 0.75 inch, such as about 0.5 inch, and an exemplary width of about 0.5 inch to about 1 inch, such as about 0.75 inch. The
thermal choke 254 can have an outer diameter of about 2 inches to about 4 inches, thethermal choke 255 can have an outer diameter of about 6 inches to about 8 inches, thethermal choke 257 can have an outer diameter of about 10 inches to about 12 inches, and thethermal choke 259 can have an outer diameter of about 15 inches to about 17 inches, for example. As shown, seals 286, such as O-rings, are placed between the coolingplate 252 and thetop plate 218, thecooling plate 252 and thethermal choke 259, and thethermal choke 259 and theheater plate 250 to form vacuum seals. - In the embodiment, the
cooling plate 252 is fastened to theheater plate 250 with threadedfasteners 290A. Each of thefasteners 290A preferably includes a washer set 273 with a locking washer and slip washer to resist loosening of thefasteners 290A due to temperature cycling and thermal expansion and movement of theheater plate 250. - Accordingly, in this embodiment, the small mass of the
cooling plate 252, in combination with the thermal resistance provided by thethermal chokes cooling plate 252 andtop plate 218, allows improved control of the rate of heat transfer between theheater plate 250 and thecooling plate 252, as compared to theheater plate 250 being in direct contact with thetop plate 218. Thetemperature control module 220 allows the temperature of thetop electrode 214 to be more closely controlled. In addition, the integratedtemperature control module 220 provides a desirably fast response time for controlling thetop electrode 214 temperature. -
FIG. 5 illustrates aplasma processing chamber 300 of a semiconductor material plasma processing apparatus comprising another exemplary embodiment of ashowerhead electrode assembly 310. As shown inFIG. 5 , theshowerhead electrode assembly 310 comprises atop electrode 314, abacking member 316 secured to thetop electrode 314, atop plate 318 and atemperature control module 320 disposed between the backingmember 316 andtop plate 318. Aconfinement ring assembly 322 surrounds thetop electrode 314 in theplasma processing chamber 300. A substrate support 312 (shown in partial view) including a bottom electrode and optional electrostatic clamping electrode is disposed beneath thetop electrode 314. - The illustrated
showerhead electrode assembly 310 includes abacking plate 342 andbacking ring 344. Thebacking plate 342 includesplenums showerhead electrode assembly 310 has the same structure as theshowerhead electrode assembly 210 except for the different structure of thebacking plate 342. As shown inFIG. 5 , theplenums top electrode 314. This enlargement of the width of the plenums provides sufficient area for placingseals 392, such as O-rings, between thebacking plate 342 andheater plate 350 to prevent gas leakage from the plenums, as well as provides sufficient thermal contact area between the top surface of thebacking plate 342 and the bottom surface of theheater plate 350. - During disassembly of
backing plate 342 fromtop electrode 314 for routine maintenance, thebacking plate 342 configuration ofFIG. 5 facilitates the ability to clean the interior surfaces ofplenums plates 170/270 fromFIGS. 1 and 2 ). -
FIG. 6 illustrates an embodiment ofheater plate 650 which includesouter heater plate 650A andinner heater plate 650B for independent temperature control overouter electrode member 632 andinner electrode member 630.Outer heater plate 650A includesheating elements 672A andinner heater plate 650B includesheating elements 672B, in whichheating elements outer heater plate 650A can be secured tobacking ring 644 using suitable fasteners; and theouter electrode member 632 can be bonded tobacking ring 644. Theinner heater plate 650B can be secured tobacking plate 642 by suitable fasteners; and theinner electrode member 630 can be bonded tobacking plate 642. The embodiment ofFIG. 6 provides temperature control of outerelectrode backing member 632 independently ofinner electrode member 630. It should be noted thatheater plate 650 ofFIG. 6 can be used in any of the embodiments ofFIG. 1 , 2 or 5. -
FIG. 7 shows the temperature versus time response for an exemplary embodiment of a showerhead electrode assembly including a top electrode including an inner electrode member, an outer electrode member, a backing plate and backing ring attached to the inner and outer electrode members, and a temperate control module attached to the backing plate and backing ring and to a top plate. The temperature control module included thermal choke rings between the cooling plate and heater plate. The thermal choke rings included a center stainless steel ring, an outermost stainless steel ring, and an aluminum ring between the center and outermost rings. The heater power was 7 kW, a coolant at a temperature was flowed through the cooling plate, the heater was on for about 17 minutes and off for about 17 minutes. The temperature set point of the top electrode was 200° C. The ramp-up rate during heating (with heater power turned on) and ramp-down rate during cooling (with heater power turned off) response for the temperature control module for several cycles, was measured by multiple thermocouples A to F located at different locations across the top electrode. - The response time for embodiments of the temperature control modules that include one or more thermal choke rings located between the cooling plate and heater plate can be optimized to the desired operating range by optimizing the design (configuration and composition) of the thermal choke ring(s) to control heat conduction between these plates in the temperature control modules. In other embodiments of the temperature control module that include a thermal choke plate, the configuration and composition of the thermal choke plate can be optimized to control heat conduction between the cooling plate and heater plate.
- While the invention has been described in detail with reference to specific embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made, and equivalents employed, without departing from the scope of the appended claims.
Claims (20)
1. The method of claim 19 , wherein the temperature control module comprises:
a heater plate having a bottom surface adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, the top electrode having a plasma-exposed bottom surface, the heater plate including at least one heater adapted to supply heat to the top electrode to control the temperature of the top electrode;
the cooling plate having a top surface adapted to be secured to and thermally isolated from a bottom surface of a top plate forming a top wall of the plasma processing chamber, the cooling plate adapted to control the temperature of the heater plate and control heat conduction between the heater plate and the top electrode; and
at least one electrically and thermally conductive thermal choke located between, and in contact with, a top surface of the heater plate and a bottom surface of the cooling plate, the at least one thermal choke adapted to control heat conduction between the heater plate to the cooling plate.
2. The method of claim 1 , wherein:
the heater plate comprises a piece of a metal having heating elements embedded therein, and gas distribution passages adapted to be in fluid communication with a gas supply and with gas distribution plenums in a backing member of the showerhead electrode assembly, the heating elements adapted to be connected to at least one power supply operable to supply power to the heating elements; and
the cooling plate comprises a piece of a metal having liquid channels formed therein, the liquid channels are adapted to be in fluid communication with at least one source of a temperature-controlled liquid which is supplied to the liquid channels to control the temperature of the cooling plate.
3. The method of claim 1 , wherein:
the cooling plate comprises a plurality of radially-spaced, concentrically-arranged first grooves in the bottom surface, each of the first grooves has a first height; and
the at least one thermal choke comprises a plurality of thermal chokes, each thermal choke is a ring disposed in a respective first groove in the cooling plate, the rings are concentrically arranged with respect to each other, each ring has a second height which is greater than the first height of the respective first groove in which the thermal choke is disposed such that the rings support the cooling plate on the heater plate, a gap is defined between the bottom surface of the cooling plate and the top surface of the heater plate, and heat is conducted between the heater plate and cooling plate through the rings.
4. The method of claim 3 , wherein the plurality of rings comprises at least one first ring and a second ring, each first ring includes a plurality of through openings, and the second ring is non-porous and surrounds the at least one first ring and forms an outer surface of the temperature control module.
5. The method of claim 3 , wherein the plurality of the rings comprises at least one first ring and a second ring, each first ring is a sintered porous metallic body, and the second ring is non-porous and surrounds the at least one first ring and forms an outer surface of the temperature control module.
6. The method of claim 1 , wherein:
the bottom surface of the cooling plate is planar;
the top surface of the heater plate is planar; and
the at least one thermal choke comprises a plate composed of a flexible, thermally and electrically conductive material, the thermal choke plate has opposed planar surfaces secured to the bottom surface of the cooling plate and the top surface of the heater plate, respectively, and the thermal choke plate has a porous structure that provides thermal resistance to heat conduction between the heater plate and the cooling plate.
7. The method of claim 1 , wherein:
the cooling plate, at least one thermal choke and heater plate comprise aligned openings; and
a threaded fastener is received in each of the aligned openings to secure the cooling plate, at least one thermal choke and heater plate to each other, each threaded fastener includes a washer set adapted to resist loosening of the fastener due to thermal cycling of the heater plate.
8. (canceled)
9. (canceled)
10. (canceled)
11. (canceled)
12. (canceled)
13. (canceled)
14. (canceled)
15. (canceled)
16. (canceled)
17. (canceled)
18. (canceled)
19. A method of controlling the temperature of a top electrode of a showerhead electrode assembly in a plasma processing chamber containing a substrate support having a bottom electrode, the showerhead electrode assembly comprising a top plate forming a top wall of the plasma processing chamber, and a temperature control module located between and secured to the top plate and the top electrode, the method comprising:
generating plasma in the plasma processing chamber in a gap between the top electrode and the substrate support;
applying power from at least one power supply to at least one heater of a heater plate of the temperature control module to heat the top electrode;
supplying a temperature-controlled liquid from at least one liquid source to liquid channels of a cooling plate of the temperature control module to control the temperature of the cooling plate; and
controlling heat conduction (i) between the cooling plate and the top plate by thermally isolating the cooling plate from the top plate, (ii) between the cooling plate and the heater plate with at least one thermal choke located between the cooling plate and heater plate, and (iii) between the heater plate and the top electrode by controlling the temperature of the heater plate, to thereby maintain the top electrode at a desired temperature.
20. The method of claim 19 , wherein:
the temperature control module maintains the top electrode at a temperature which is within about ±5 of a set point of about 40° C. to about 200° C. when the plasma is being generated and when the plasma is not being generated; and
the temperature control module maintains a maximum radial center-to-edge temperature gradient of the top electrode of about ±30° C.
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US13/671,255 US20130126518A1 (en) | 2007-09-25 | 2012-11-07 | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
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US12/232,809 US8313610B2 (en) | 2007-09-25 | 2008-09-24 | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
US13/671,255 US20130126518A1 (en) | 2007-09-25 | 2012-11-07 | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
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US13/671,255 Abandoned US20130126518A1 (en) | 2007-09-25 | 2012-11-07 | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
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JP (1) | JP5194125B2 (en) |
KR (1) | KR101519684B1 (en) |
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- 2008-09-24 KR KR1020107009016A patent/KR101519684B1/en active IP Right Grant
- 2008-09-24 WO PCT/US2008/011052 patent/WO2009042137A2/en active Application Filing
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2012
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Also Published As
Publication number | Publication date |
---|---|
KR101519684B1 (en) | 2015-05-12 |
WO2009042137A2 (en) | 2009-04-02 |
TWI473538B (en) | 2015-02-11 |
KR20100075957A (en) | 2010-07-05 |
US8313610B2 (en) | 2012-11-20 |
TW200922388A (en) | 2009-05-16 |
CN101809717A (en) | 2010-08-18 |
WO2009042137A3 (en) | 2009-06-04 |
US20090081878A1 (en) | 2009-03-26 |
CN101809717B (en) | 2012-10-10 |
JP5194125B2 (en) | 2013-05-08 |
JP2010541239A (en) | 2010-12-24 |
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