US20120319271A1 - Bump structure and process of manufacturing the same - Google Patents
Bump structure and process of manufacturing the same Download PDFInfo
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- US20120319271A1 US20120319271A1 US13/163,967 US201113163967A US2012319271A1 US 20120319271 A1 US20120319271 A1 US 20120319271A1 US 201113163967 A US201113163967 A US 201113163967A US 2012319271 A1 US2012319271 A1 US 2012319271A1
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- connection slot
- polymer block
- layer
- groove
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 111
- 238000005272 metallurgy Methods 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004891 communication Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000010931 gold Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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Definitions
- the present invention is generally relating to a bump structure and process of manufacturing the same, more particularly to a bump structure and process of manufacturing the same that improves coupling strength.
- a conventional gold bump structure 10 is formed on a silicone substrate 20 , mentioned silicone substrate 20 comprises a plurality of bond pads 21 and a protecting layer 22 , wherein a plurality of openings 23 are formed on the protecting layer 22 , and the openings 23 reveal the bond pads 21 .
- the gold bump structure 10 comprises an under bump metallurgy layer 11 and a gold bump layer 12 , the under bump metallurgy layer 11 is formed on the bond pads 21 , and the gold bump layer 12 is formed on the under bump metallurgy layer 11 .
- the contact area between the gold bump structure 10 and the contact is insufficient to degrade coupling strength between the gold bump structure 10 and the contact.
- a displacement phenomenon occurred in the process of coupling the contact and the gold bump structure 10 may cause a short condition between adjacent contacts.
- the gold bump structure 10 is composed of the gold bump layer 12 and leads a higher production cost.
- the primary object of the present invention is to provide a bump structure disposed on a substrate, the substrate comprises a plurality of bond pads and a protecting layer, wherein the protecting layer comprises a plurality of openings, and the openings reveal the bond pads.
- the bump structure is electrically connected with each of the bond pads and comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks, located at two sides of the first groove and disposed on the bond pad and the protecting layer.
- the first groove reveals the bond pad.
- the first polymer block comprises a first top surface and a first connection slot recessed from the first top surface
- the second polymer block comprises a second top surface and a second connection slot recessed from the second top surface, wherein the first connection slot of the first polymer block and the second connection slot of the second polymer block are in communication with the first groove.
- the under bump metallurgy layer covers the first polymer block, the second polymer block and the bond pad to form a second groove, a third connection slot and a fourth connection slot, wherein the third connection slot and the fourth connection slot are in communication with the second groove.
- connection metal layer covers the under bump metallurgy layer to form a third groove, a fifth connection slot and a sixth connection slot, wherein the fifth connection slot and the sixth connection slot are in communication with the third groove.
- the second groove of the under bump metallurgy layer is located between the first groove and the third groove of the connection metal layer
- the third connection slot of the under bump metallurgy layer is located between the first connection slot of the first polymer block and the fifth connection slot of the connection metal layer
- the fourth connection slot of the under bump metallurgy layer is located between the second connection slot of the second polymer block and the sixth connection slot of the connection metal layer.
- Another object of the present invention is to provide a process of manufacturing a bump structure comprising the steps described as follow: first, providing a substrate having a plurality of bond pads and a protecting layer, the protecting layer comprises a plurality of openings, and the openings reveal the bond pads; next, forming a polymer layer on the substrate, the polymer layer covers the protecting layer and the bond pads; then, providing a first mask and performing a first exposure; thereafter, removing the first mask and performing a first development to enable the polymer layer to form a plurality of polymer bumps, each of the polymer bumps corresponds one bond pad and comprises a first polymer block, a second polymer block and a first groove, wherein the first polymer block and the second polymer block are individual blocks and located at two sides of the first groove respectively, the first groove reveals the bond pad, the first polymer block and the second polymer block are disposed on the bond pad and the protecting layer, wherein the first polymer block comprises a first top surface and a first connection slot recessed from the first
- the bump structure when the bump structure is eutecticly bonded with one contact (such as connection pad or pin) of another electronic device, a bottom surface of the contact is coupled to the connection metal layer of the bump structure, and part of the contact is inserted into the groove and the connection slot. Via ramps of the grooves, the contact area between the bump structure and the contact may be increased to raise the coupling strength between the contact and the bump structure. Besides, when the contact is coupled to the connection metal layer, a displacement phenomenon of the contact can be avoided.
- the bump structure may utilize the first polymer block and the second polymer block as base materials for cost savings of electroplating.
- the bump structure may apply in Chip-on-Glass (COG) package, when the bump is laminated onto a glass substrate, the groove may increase flows of anisotropic conductive film located between the bump and the glass substrate to prevent gathering of the conductive particles of the anisotropic conductive film between adjacent bumps to lead a short phenomenon. Or, for the reason that the polymer body and the grooves possess elasticity, the bump may directly laminate onto a bond pad of the glass substrate instead of using anisotropic conductive film therefore lowering the cost.
- COG Chip-on-Glass
- FIG. 1 is a cross-sectional schematic diagram illustrating a conventional bump structure.
- FIG. 2 is a three-dimensional view illustrating a bump structure in accordance with a preferred embodiment of the present invention.
- FIG. 3 is a three-dimensional exploded view illustrating the bump structure in accordance with a preferred embodiment of the present invention.
- FIGS. 4A to 4L are three-dimensional views illustrating a process of manufacturing a bump structure with a preferred embodiment of the present invention.
- FIGS. 5A to 5L are cross-sectional schematic diagrams illustrating the process of manufacturing a bump structure in accordance with a preferred embodiment of the present invention.
- FIG. 6 is a lateral view illustrating a contact being connected with the bump structure in accordance with a preferred embodiment of the present invention.
- the bump structure 100 is electrically connected with each of the bond pads 210 and comprises a first polymer block 110 , a second polymer block 120 , a first groove 130 , an under bump metallurgy layer 140 and a connection metal layer 150 , wherein the first polymer block 110 and the second polymer block 120 are individual blocks separately and located at two sides of the first groove 130 .
- the first groove 130 reveals the bond pad 210 .
- the first polymer block 110 and the second polymer block 120 are disposed on the bond pad 210 and the protecting layer 220 , wherein the first polymer block 110 comprises a first top surface 111 and a first connection slot 112 recessed from the first top surface 111 , and the second polymer block 120 comprises a second top surface 121 and a second connection slot 122 recessed from the second top surface 121 .
- the first connection slot 112 of the first polymer block 110 and the second connection slot 122 of the second polymer block 120 are in communication with the first groove 130
- the under bump metallurgy layer 140 covers the bond pad 210 and forms a second groove 141 , a third connection slot 142 and a fourth connection slot 143 , wherein the second groove 141 is in communication with the third connection slot 142 and the fourth connection slot 143 .
- the material of the under bump metallurgy layer 140 is TiW/Au.
- connection metal layer 150 The under bump metallurgy layer 140 is covered by the connection metal layer 150 , wherein a third groove 151 , a fifth connection slot 152 and a sixth connection slot 153 are formed on the connection metal layer 150 , and the third groove 151 is in communication with the fifth connection slot 152 and the sixth connection slot 153 .
- the third groove 151 , the fifth connection slot 152 and the sixth connection slot 153 are formed in a cross shape, wherein the second groove 141 of the under bump metallurgy layer 140 is located between the first groove 130 and the third groove 151 , the third connection layer 142 of the under bump metallurgy layer 140 is located between the first connection slot 112 of the first polymer block 110 and the fifth connection slot 152 of the connection metal layer 150 , and the fourth connection slot 143 of the under bump metallurgy layer 140 is located between the second connection slot 122 of the second polymer block 120 and the sixth connection slot 153 of the connection metal layer 150 .
- the third groove 151 comprises a first width W 1
- the fifth connection slot 152 comprises a second width W 2
- the sixth connection slot 153 comprises a third width W 3
- the first width W 1 is larger than the second width W 2 and the third width W 3 .
- a process of manufacturing the bump structure 100 comprises the steps as follow: first, referring to FIGS. 4A and 5A , providing a substrate 200 having a plurality of bond pads 210 and a protecting layer 220 , wherein the protecting layer 220 comprises a plurality of openings 221 , and the openings 221 reveal the bond pads 210 ; next, with reference to FIGS. 4B and 5B , forming a polymer layer 300 on the substrate 200 , and the polymer layer 300 covers the protecting layer 220 and the bond pad 210 ; then, with reference to FIGS. 4C and 5C , providing a first mask and performing a first exposure; afterward, with reference to FIGS.
- each of the polymer bumps 310 corresponds one bond pad 210 and comprises a first polymer block 110 , a second polymer block 120 and a first groove 130 , wherein the first polymer block 110 and the second polymer block 120 are individual blocks and located at two sides of the first groove 130 , the first groove 130 reveals the bond pad 210 , and the first polymer block 110 and the second polymer block 120 are disposed on the bond pad 210 and the protecting layer 220 , referring to FIG.
- the first polymer block 110 comprises a first top surface 111 and a first connection slot 112 recessed from the first top surface 111
- the second polymer block 120 comprises a second top surface 121 and a second connection slot 122 recessed from the second top surface 121
- the first connection slot 112 of the first polymer block 110 and the second connection slot 122 of the second polymer block 120 are in communication with the first groove 130 ; later, with reference to FIGS. 4E and 5E , curing the polymer bumps 310 ; next, with reference to FIGS.
- the under bump metallurgy layer 140 covers the bond pad 210 , the protecting layer 220 , the first polymer block 110 and the second polymer block 120 , with reference to FIGS.
- a second groove 141 , a third connection slot 142 and a fourth connection slot 143 are formed on the under bump metallurgy layer 140 , wherein the second groove 141 is in communication with the third connection slot 142 and the fourth connection slot 143 and located on top of the first groove 130 , the third connection slot 142 is located on top of the first connection slot 112 , and the fourth connection slot 143 is located on top of the second connection slot 122 ; afterward, with reference to FIGS. 4G and 5G , forming a photoresist layer 500 on the under bump metallurgy layer 140 ; later, with reference to FIGS.
- each of the openings 510 corresponds each of the polymer bumps 310 and reveals the under bump metallurgy layer 140 located within each of the openings 510 ; then, with reference to FIGS.
- connection metal layer 150 located within the openings 510
- the connection metal layer 150 covers the under bump metallurgy layer 140 revealed by the openings 510
- a third groove 151 , a fifth connection slot 152 and a sixth connection slot 153 are formed on the connection metal layer 150
- the third groove 151 is in communication with the fifth connection slot 152 and the sixth connection slot 153
- the third groove 151 is located on top of the second groove 141
- the fifth connection slot 152 is located on top of the third connection slot 142
- the sixth connection slot 153 is located on top of the fourth connection slot 143 ; next, with reference to FIGS.
- the bump structure 100 when the bump structure 100 is eutecticly bonded with one contact 700 (such as connection pad or pin) of another electronic device, a bottom surface 710 of the contact 700 is coupled to the connection metal layer 150 of the bump structure 100 , and part of the contact 700 is inserted into the third groove 151 , the fifth connection slot 152 and the sixth connection slot 153 . Via ramps of the third groove 151 , the contact area between the bump structure 100 and the contact 700 can be increased to raise the coupling strength between the contact 700 and the bump structure 100 . Besides, for the reason that part of the contact 700 is inserted into the connection metal layer 150 , the fifth connection slot 152 and the sixth connection slot 153 , a displacement phenomenon likely occurred at the contact 700 can be avoided.
- the bump structure 100 may utilize the first polymer block 110 and the second polymer block 120 as base materials therefore saving costs for electroplating.
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Abstract
Description
- The present invention is generally relating to a bump structure and process of manufacturing the same, more particularly to a bump structure and process of manufacturing the same that improves coupling strength.
- With reference to
FIG. 1 , a conventionalgold bump structure 10 is formed on asilicone substrate 20, mentionedsilicone substrate 20 comprises a plurality ofbond pads 21 and a protectinglayer 22, wherein a plurality ofopenings 23 are formed on the protectinglayer 22, and theopenings 23 reveal thebond pads 21. Thegold bump structure 10 comprises an underbump metallurgy layer 11 and agold bump layer 12, the underbump metallurgy layer 11 is formed on thebond pads 21, and thegold bump layer 12 is formed on the underbump metallurgy layer 11. When thegold bump structure 10 is eutecticly bonded with one contact (such as connection pad or pin) of the other electronic device, the contact area between thegold bump structure 10 and the contact is insufficient to degrade coupling strength between thegold bump structure 10 and the contact. In addition, a displacement phenomenon occurred in the process of coupling the contact and thegold bump structure 10 may cause a short condition between adjacent contacts. Besides, thegold bump structure 10 is composed of thegold bump layer 12 and leads a higher production cost. - The primary object of the present invention is to provide a bump structure disposed on a substrate, the substrate comprises a plurality of bond pads and a protecting layer, wherein the protecting layer comprises a plurality of openings, and the openings reveal the bond pads. The bump structure is electrically connected with each of the bond pads and comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks, located at two sides of the first groove and disposed on the bond pad and the protecting layer. The first groove reveals the bond pad. The first polymer block comprises a first top surface and a first connection slot recessed from the first top surface, the second polymer block comprises a second top surface and a second connection slot recessed from the second top surface, wherein the first connection slot of the first polymer block and the second connection slot of the second polymer block are in communication with the first groove. The under bump metallurgy layer covers the first polymer block, the second polymer block and the bond pad to form a second groove, a third connection slot and a fourth connection slot, wherein the third connection slot and the fourth connection slot are in communication with the second groove. The connection metal layer covers the under bump metallurgy layer to form a third groove, a fifth connection slot and a sixth connection slot, wherein the fifth connection slot and the sixth connection slot are in communication with the third groove. The second groove of the under bump metallurgy layer is located between the first groove and the third groove of the connection metal layer, the third connection slot of the under bump metallurgy layer is located between the first connection slot of the first polymer block and the fifth connection slot of the connection metal layer, and the fourth connection slot of the under bump metallurgy layer is located between the second connection slot of the second polymer block and the sixth connection slot of the connection metal layer.
- Another object of the present invention is to provide a process of manufacturing a bump structure comprising the steps described as follow: first, providing a substrate having a plurality of bond pads and a protecting layer, the protecting layer comprises a plurality of openings, and the openings reveal the bond pads; next, forming a polymer layer on the substrate, the polymer layer covers the protecting layer and the bond pads; then, providing a first mask and performing a first exposure; thereafter, removing the first mask and performing a first development to enable the polymer layer to form a plurality of polymer bumps, each of the polymer bumps corresponds one bond pad and comprises a first polymer block, a second polymer block and a first groove, wherein the first polymer block and the second polymer block are individual blocks and located at two sides of the first groove respectively, the first groove reveals the bond pad, the first polymer block and the second polymer block are disposed on the bond pad and the protecting layer, wherein the first polymer block comprises a first top surface and a first connection slot recessed from the first top surface, and the second polymer block comprises a second top surface and a second connection slot recessed from the second top surface, the first connection slot of the first polymer block and the second connection slot of the second polymer block are in communication with the first groove; afterward, curing the polymer bumps; later, forming an under bump metallurgy layer on the substrate, the under bump metallurgy layer covers the protecting layer, the bond pad, the first polymer block and the second polymer block, wherein a second groove, a third connection slot and a fourth connection slot are formed on the under bump metallurgy layer, the second groove is in communication with the third connection slot and the fourth connection slot and located on top of the first groove, the third connection slot is located on top of the first connection slot, and the fourth connection slot is located on top of the second connection slot; next, forming a photoresist layer on the under bump metallurgy layer; thereafter, providing a second mask and performing a second exposure; then, removing the second mask and performing a second development to enable the photoresist layer to form a plurality of openings, each of the openings corresponds each of the polymer bumps and reveals the under bump metallurgy layer located within each of the openings; afterward, forming a connection metal layer within the openings, the connection metal layer covers the under bump metallurgy layer revealed by the openings, wherein a third groove, a fifth connection slot, and a sixth connection slot are formed on the connection metal layer, the third groove is in communication with the fifth connection slot and the sixth connection slot and located on top of the second groove, the fifth connection slot is located on top of the third connection slot, and the sixth connection slot is located on top of the fourth connection slot; later, removing the photoresist layer to reveal the under bump metallurgy layer which is not covered by the connection metal layer; at last, removing the under bump metallurgy layer which is not covered by the connection metal layer to enable the under bump metallurgy layer to merely cover the bond pad, the first polymer block and the second polymer block.
- Therefore, when the bump structure is eutecticly bonded with one contact (such as connection pad or pin) of another electronic device, a bottom surface of the contact is coupled to the connection metal layer of the bump structure, and part of the contact is inserted into the groove and the connection slot. Via ramps of the grooves, the contact area between the bump structure and the contact may be increased to raise the coupling strength between the contact and the bump structure. Besides, when the contact is coupled to the connection metal layer, a displacement phenomenon of the contact can be avoided. In addition, the bump structure may utilize the first polymer block and the second polymer block as base materials for cost savings of electroplating. In this invention, the bump structure may apply in Chip-on-Glass (COG) package, when the bump is laminated onto a glass substrate, the groove may increase flows of anisotropic conductive film located between the bump and the glass substrate to prevent gathering of the conductive particles of the anisotropic conductive film between adjacent bumps to lead a short phenomenon. Or, for the reason that the polymer body and the grooves possess elasticity, the bump may directly laminate onto a bond pad of the glass substrate instead of using anisotropic conductive film therefore lowering the cost.
-
FIG. 1 is a cross-sectional schematic diagram illustrating a conventional bump structure. -
FIG. 2 is a three-dimensional view illustrating a bump structure in accordance with a preferred embodiment of the present invention. -
FIG. 3 is a three-dimensional exploded view illustrating the bump structure in accordance with a preferred embodiment of the present invention. -
FIGS. 4A to 4L are three-dimensional views illustrating a process of manufacturing a bump structure with a preferred embodiment of the present invention. -
FIGS. 5A to 5L are cross-sectional schematic diagrams illustrating the process of manufacturing a bump structure in accordance with a preferred embodiment of the present invention. -
FIG. 6 is a lateral view illustrating a contact being connected with the bump structure in accordance with a preferred embodiment of the present invention. - With reference to
FIGS. 2 and 3 , abump structure 100 disposed on asubstrate 200 having a plurality ofbond pads 210 and aprotecting layer 220 in accordance with a preferred embodiment of the present invention, wherein theprotecting layer 220 comprises a plurality ofopenings 221, and theopenings 221 reveal thebond pads 210. Thebump structure 100 is electrically connected with each of thebond pads 210 and comprises afirst polymer block 110, asecond polymer block 120, afirst groove 130, an underbump metallurgy layer 140 and aconnection metal layer 150, wherein thefirst polymer block 110 and thesecond polymer block 120 are individual blocks separately and located at two sides of thefirst groove 130. Thefirst groove 130 reveals thebond pad 210. With reference toFIGS. 3 and 5E , thefirst polymer block 110 and thesecond polymer block 120 are disposed on thebond pad 210 and theprotecting layer 220, wherein thefirst polymer block 110 comprises a firsttop surface 111 and afirst connection slot 112 recessed from the firsttop surface 111, and thesecond polymer block 120 comprises a secondtop surface 121 and asecond connection slot 122 recessed from the secondtop surface 121. Thefirst connection slot 112 of thefirst polymer block 110 and thesecond connection slot 122 of thesecond polymer block 120 are in communication with thefirst groove 130, the underbump metallurgy layer 140 covers thebond pad 210 and forms asecond groove 141, athird connection slot 142 and afourth connection slot 143, wherein thesecond groove 141 is in communication with thethird connection slot 142 and thefourth connection slot 143. The material of the underbump metallurgy layer 140 is TiW/Au. The underbump metallurgy layer 140 is covered by theconnection metal layer 150, wherein athird groove 151, afifth connection slot 152 and asixth connection slot 153 are formed on theconnection metal layer 150, and thethird groove 151 is in communication with thefifth connection slot 152 and thesixth connection slot 153. In this embodiment, thethird groove 151, thefifth connection slot 152 and thesixth connection slot 153 are formed in a cross shape, wherein thesecond groove 141 of the underbump metallurgy layer 140 is located between thefirst groove 130 and thethird groove 151, thethird connection layer 142 of the underbump metallurgy layer 140 is located between thefirst connection slot 112 of thefirst polymer block 110 and thefifth connection slot 152 of theconnection metal layer 150, and thefourth connection slot 143 of the underbump metallurgy layer 140 is located between thesecond connection slot 122 of thesecond polymer block 120 and thesixth connection slot 153 of theconnection metal layer 150. Thethird groove 151 comprises a first width W1, thefifth connection slot 152 comprises a second width W2, thesixth connection slot 153 comprises a third width W3, the first width W1 is larger than the second width W2 and the third width W3. - With reference to
FIGS. 4A to 4M and 5A to 5M, represented a process of manufacturing thebump structure 100 comprises the steps as follow: first, referring toFIGS. 4A and 5A , providing asubstrate 200 having a plurality ofbond pads 210 and aprotecting layer 220, wherein theprotecting layer 220 comprises a plurality ofopenings 221, and theopenings 221 reveal thebond pads 210; next, with reference toFIGS. 4B and 5B , forming apolymer layer 300 on thesubstrate 200, and thepolymer layer 300 covers theprotecting layer 220 and thebond pad 210; then, with reference toFIGS. 4C and 5C , providing a first mask and performing a first exposure; afterward, with reference toFIGS. 4D and 5D , removing thefirst mask 400 and performing a first development to enable thepolymer layer 300 to form a plurality of polymer bumps 310, each of the polymer bumps 310 corresponds onebond pad 210 and comprises afirst polymer block 110, asecond polymer block 120 and afirst groove 130, wherein thefirst polymer block 110 and thesecond polymer block 120 are individual blocks and located at two sides of thefirst groove 130, thefirst groove 130 reveals thebond pad 210, and thefirst polymer block 110 and thesecond polymer block 120 are disposed on thebond pad 210 and theprotecting layer 220, referring toFIG. 4 , thefirst polymer block 110 comprises a firsttop surface 111 and afirst connection slot 112 recessed from the firsttop surface 111, thesecond polymer block 120 comprises a secondtop surface 121 and asecond connection slot 122 recessed from the secondtop surface 121, wherein thefirst connection slot 112 of thefirst polymer block 110 and thesecond connection slot 122 of thesecond polymer block 120 are in communication with thefirst groove 130; later, with reference toFIGS. 4E and 5E , curing the polymer bumps 310; next, with reference toFIGS. 4F and 5F , forming an underbump metallurgy layer 140 on thesubstrate 200, the underbump metallurgy layer 140 covers thebond pad 210, the protectinglayer 220, thefirst polymer block 110 and thesecond polymer block 120, with reference toFIGS. 4D and 4F , asecond groove 141, athird connection slot 142 and afourth connection slot 143 are formed on the underbump metallurgy layer 140, wherein thesecond groove 141 is in communication with thethird connection slot 142 and thefourth connection slot 143 and located on top of thefirst groove 130, thethird connection slot 142 is located on top of thefirst connection slot 112, and thefourth connection slot 143 is located on top of thesecond connection slot 122; afterward, with reference toFIGS. 4G and 5G , forming aphotoresist layer 500 on the underbump metallurgy layer 140; later, with reference toFIGS. 4H and 5H , providing asecond mask 600 and performing a second development to enable thephotoresist layer 500 to form a plurality ofopenings 510, each of theopenings 510 corresponds each of the polymer bumps 310 and reveals the underbump metallurgy layer 140 located within each of theopenings 510; then, with reference toFIGS. 4J and 5J , forming aconnection metal layer 150 located within theopenings 510, theconnection metal layer 150 covers the underbump metallurgy layer 140 revealed by theopenings 510, wherein athird groove 151, afifth connection slot 152 and asixth connection slot 153 are formed on theconnection metal layer 150, and thethird groove 151 is in communication with thefifth connection slot 152 and thesixth connection slot 153, referring toFIG. 3 , thethird groove 151 is located on top of thesecond groove 141, thefifth connection slot 152 is located on top of thethird connection slot 142, and thesixth connection slot 153 is located on top of thefourth connection slot 143; next, with reference toFIGS. 4K and 5K , removing thephotoresist layer 500 to reveal the underbump metallurgy layer 140 which is not covered by theconnection metal layer 150; at last, with reference toFIGS. 3 , 4L and 5L, removing the underbump metallurgy layer 140 which is not covered by theconnection metal layer 150 to enable the underbump metallurgy layer 140 to merely cover thefirst polymer block 110 and thesecond polymer block 120. - Referring to
FIG. 6 , when thebump structure 100 is eutecticly bonded with one contact 700 (such as connection pad or pin) of another electronic device, abottom surface 710 of thecontact 700 is coupled to theconnection metal layer 150 of thebump structure 100, and part of thecontact 700 is inserted into thethird groove 151, thefifth connection slot 152 and thesixth connection slot 153. Via ramps of thethird groove 151, the contact area between thebump structure 100 and thecontact 700 can be increased to raise the coupling strength between thecontact 700 and thebump structure 100. Besides, for the reason that part of thecontact 700 is inserted into theconnection metal layer 150, thefifth connection slot 152 and thesixth connection slot 153, a displacement phenomenon likely occurred at thecontact 700 can be avoided. In addition, thebump structure 100 may utilize thefirst polymer block 110 and thesecond polymer block 120 as base materials therefore saving costs for electroplating. - While this invention has been particularly illustrated and described in detail with respect to the preferred embodiments thereof, it will be clearly understood by those skilled in the art that it is not limited to the specific features and descriptions and various modifications and changes in form and details may be made without departing from the spirit and scope of this invention.
Claims (8)
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Citations (6)
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US5631499A (en) * | 1994-04-28 | 1997-05-20 | Kabushiki Kaisha Toshiba | Semiconductor device comprising fine bump electrode having small side etch portion and stable characteristics |
US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
US6441500B1 (en) * | 1999-09-13 | 2002-08-27 | Sharp Kabushiki Kaisha | Semiconductor device having resin members provided separately corresponding to externally connecting electrodes |
US20020180064A1 (en) * | 2001-06-05 | 2002-12-05 | Chipbond Technology Corporation | Metallized surface wafer level package structure |
US6566752B2 (en) * | 2000-11-16 | 2003-05-20 | Industrial Technology Research Institute | Bonding pad and method for manufacturing it |
US6577001B2 (en) * | 2000-04-19 | 2003-06-10 | Oki Electric Industry Co., Ltd. | Semiconductor device and the method for manufacturing the same |
-
2011
- 2011-06-20 US US13/163,967 patent/US8330280B1/en active Active
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US5631499A (en) * | 1994-04-28 | 1997-05-20 | Kabushiki Kaisha Toshiba | Semiconductor device comprising fine bump electrode having small side etch portion and stable characteristics |
US6441500B1 (en) * | 1999-09-13 | 2002-08-27 | Sharp Kabushiki Kaisha | Semiconductor device having resin members provided separately corresponding to externally connecting electrodes |
US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
US6577001B2 (en) * | 2000-04-19 | 2003-06-10 | Oki Electric Industry Co., Ltd. | Semiconductor device and the method for manufacturing the same |
US6566752B2 (en) * | 2000-11-16 | 2003-05-20 | Industrial Technology Research Institute | Bonding pad and method for manufacturing it |
US20020180064A1 (en) * | 2001-06-05 | 2002-12-05 | Chipbond Technology Corporation | Metallized surface wafer level package structure |
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