US20120211791A1 - LED Packaging Structure and Fabricating Method Thereof - Google Patents
LED Packaging Structure and Fabricating Method Thereof Download PDFInfo
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- US20120211791A1 US20120211791A1 US13/462,785 US201213462785A US2012211791A1 US 20120211791 A1 US20120211791 A1 US 20120211791A1 US 201213462785 A US201213462785 A US 201213462785A US 2012211791 A1 US2012211791 A1 US 2012211791A1
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- emitting diode
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 13
- 239000008393 encapsulating agent Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- This invention relates to a light emitting diode packaging structure and fabricating methods thereof, and more particularly, to a light emitting diode packaging structure and fabricating methods that can improve phosphor powder distribution.
- LED light emitting diode
- white light LED having high brightness can be obtained by using phosphor powder with blue light chip (such as GaN).
- the blue light emitted from the chip may excite the phosphor powder to generate another wavelength of light (such as yellow light).
- another wavelength of light such as yellow light
- dispensing or surface coating is usually utilized.
- the conventional light emitting diode packaging structure 10 includes a base 11 on which a pad 13 is provided; a substrate 15 ; a semiconductor layer 17 ; an electrode 18 ; a conducting wire 20 connecting the electrode 18 to the pad 13 on the base 11 ; and a phosphor encapsulant 22 having phosphor powder for sealing the pad 13 , the substrate 15 , the semiconductor layer 17 , the electrode 18 , and the conducting wire 20 on the base 11 .
- the phosphor encapsulant 22 having a phosphor powder will be formed as a hemisphere shape during a dispensing process. Therefore, the light emitted from the LED may be changed according to the various thickness of the phosphor encapsulant even if the phosphor powder is evenly dispersed within the encapsulating gel 22 , because the light emitted from different regions of the semiconductor layer may pass through different thickness of phosphor encapsulant 22 .
- the conventional light emitting diode packaging structure is limited to structure and thus cannot effectively evenly disperse the phosphor powder. Therefore, it is necessary to have an enhanced light emitting diode packaging structure to overcome the above problems so as to achieve a better color evenness, a faster fabricating process, and a higher yield.
- one of the objectives of the present invention is to improve the problem of uneven color of light of LED by forming a gel-blocking structure to block the phosphor layer and make the phosphor layer evenly disposed on the semiconductor layer.
- a LED (light emitting diode) packaging structure which includes a base, a LED chip, a gel-blocking structure and a phosphor layer.
- the LED chip is disposed on the base and electrically connected to the base.
- the LED chip has a substrate and at least a semiconductor layer formed on the substrate.
- the gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer.
- the phosphor layer is filled in a space defined by the gel-blocking structure, the substrate and the semiconductor layer.
- the light emitting diode packaging structure further includes an encapsulant, disposed on the base and covering the LED chip.
- the gel-blocking structure includes a first metal layer and a second metal layer formed on the first metal layer.
- the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
- the LED chip further includes a first electrode and a second electrode.
- the first electrode is disposed on a side of the substrate of the LED chip and connected to the base, and the second electrode is disposed on the semiconductor layer.
- the first electrode is electrically connected to the substrate of the LED chip, and the second electrode is electrically connected to a pad on the base by a conducting wire.
- the first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire.
- the LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
- the phosphor layer includes at least a phosphor powder and an encapsulating gel.
- a method for fabricating a light emitting diode packaging structure comprising the steps of providing a base; disposing a LED chip on the base and electrically connecting the LED chip to the base, which has a substrate and at least a semiconductor layer formed on the substrate; disposing a gel-blocking structure on the substrate of the LED chip and surround the semiconductor layer; and filling a phosphor layer in a space defined by the gel-blocking structure, the substrate, and the semiconductor layer.
- the light emitting diode packaging structure further includes an encapsulant, disposed on the base and covering the LED chip.
- the gel-blocking structure is made as forming a first metal layer by evaporation deposition at first and then forming a second metal layer on the first metal layer by electroplating.
- the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
- the LED chip further includes a first electrode and a second electrode, the first electrode is disposed on a side of the substrate of the LED chip and connected to the base, and the second electrode is disposed on the LED chip.
- the first electrode is electrically connected to the substrate of the LED chip, and the second electrode is electrically connected to a pad on the base.
- the second electrode is electrically connected to a pad on the base by a conducting wire.
- the LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
- the first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire.
- the phosphor layer includes at least a kind of phosphor powder and a gel.
- FIG. 1 shows a prior art light emitting diode packaging structure.
- FIG. 2 shows a sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention.
- FIG. 3 shows another sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention.
- FIG. 2 shows a sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention.
- the light emitting diode packaging structure includes a base 110 , a LED chip, and a phosphor layer 210 .
- the phosphor layer 210 is made by mixing at least an encapsulating gel 212 and phosphor power 214 .
- the LED chip is disposed on the base 110 and electrically connected to the base 110 .
- the LED chip has a substrate 150 , at least a semiconductor layer 170 formed on the substrate 150 , and a gel-blocking structure 190 .
- the semiconductor layer will use different compounds, such as indium (In) compound or aluminum (Al) nitride, according to the color of the light to be emitted.
- the semiconductor layer 170 will emit a certain wavelength of light and the emitted light may excite the phosphor layer 210 to generate another wavelength of light. By mixing these two types of lights, an expected color of light is obtained.
- the gel-blocking structure 190 is disposed on the substrate 150 of the LED chip and surrounding the semiconductor layer 170 .
- the gel-blocking structure 190 includes a first metal layer 192 and a second metal layer 194 formed on the first metal layer 192 . Due to that a metal layer may be quickly formed by electroplating, the gel-blocking structure 190 will form the first metal layer 192 by evaporation deposition at first and then form the second metal layer 194 on the first metal layer 192 by electroplating. Therefore, it can effectively reduce the process time.
- the thickness of the first metal layer 192 is in the range of 0.3 and 2 ⁇ m
- the thickness of the second metal layer 194 is in the range of 200 and 300 ⁇ m.
- the gel-blocking structure 190 is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
- the gel-blocking structure 190 may block the phosphor layer 210 and make the phosphor layer 210 evenly cover on the semiconductor layer 170 during the process of filling the phosphor layer 210 , so as to solve the problem of uneven color of light of LED.
- the light emitting diode packaging structure further includes an encapsulant 220 disposed on the base 110 and covering the LED chip.
- the light emitting diode packaging structure of the present invention includes a first electrode 120 and a second electrode 180 , the first electrode 120 and the second electrode 180 are disposed differently.
- the first electrode 120 is disposed on a side of the substrate 150 of the LED chip and is connected to the base 110
- the second electrode 180 is disposed on the semiconductor layer 170 of the LED chip. Therefore, a vertically connected light emitting diode packaging structure is obtained.
- the first electrode 120 is electrically connected to the substrate 150 of the LED chip
- the second electrode 180 is electrically connected to a pad 130 on the base 110 by a conducting wire 200 .
- first electrode 120 and the second electrode 180 may be both disposed on the semiconductor layer 170 of the base 110 , as shown in FIG. 3 , and the first electrode 120 and the second electrode 180 are electrically connected to pads 132 , 130 on the base 110 by conducting wires 202 , 200 , respectively.
- the gel-blocking structure 190 may block the phosphor layer 210 and make the phosphor layer 210 and the phosphor powder 214 included therein evenly covered on the surface of the semiconductor layer 170 during filling the phosphor layer 210 .
- the blue light emitted from the semiconductor layer 170 passes through the phosphor layer 210 , the color of the obtained white light is even because of the even thickness of the emitted phosphor layer 210 that makes the excited phosphor powder 214 dispersed evenly.
- the color of white light may be measured by any spectrometer in the market and shown in the Commission Internationale de l'clairage (CIE) coordinates.
- CIE Commission Internationale de l'clairage
- the CIE is an international organization which specifically establishes the standards of the luminance and color of light.
- the CIE(x) of the center of the LED of the present invention is about 0.30
- the CIE(x) of the edge of the LED of the present invention is about 0.32.
- the LED of the present invention obviously enhances the distribution of the color of light.
- CIE(y) also has similar effect.
- the substrate of the present invention may be substituted by any suitable substitution, such as SiC, carbides, metal, and so on.
- the substrate of the present invention may also be selectively connected to a heat dissipation plate or bonding layer depending on the needs.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
A light emitting diode (LED) packaging structure includes a base, a LED chip, a gel-blocking structure and a phosphor layer. The LED chip disposed on the base and electrically connected to the base. The LED chip having a substrate and a semiconductor layer formed on the substrate. The gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer. The phosphor layer is filled within a space defined by the gel-blocking structure, the substrate and the semiconductor layer. The present invention also discloses a fabricating method of the LED packaging structure.
Description
- This application is a continuation of U.S. patent application Ser. No. 12/588,777, filed on Oct. 28, 2009, which claims priority from Taiwan Patent Application No. 098101732 filed on Jan. 16, 2009. The above-identified applications are incorporated herein by reference in their entirety.
- This invention relates to a light emitting diode packaging structure and fabricating methods thereof, and more particularly, to a light emitting diode packaging structure and fabricating methods that can improve phosphor powder distribution.
- Due to the characteristics of high brightness, low power consumption and so on, light emitting diode (LED) has rapidly replaced the conventional light sources for illumination in many applications, like display. The light source used for illumination requires high brightness of white light. Therefore, the whole industry now focuses on the research and development of white light LED.
- At present, white light LED having high brightness can be obtained by using phosphor powder with blue light chip (such as GaN). The blue light emitted from the chip may excite the phosphor powder to generate another wavelength of light (such as yellow light). By mixing the blue light and the yellow light, an expected white light is obtained. As to the LED packaging, dispensing or surface coating is usually utilized.
- The advantage of utilizing dispensing or surface coating to package LED is simple in process. However, the problem of uneven color of light may easily occur in the dispensing process because the quantity of glue cannot be easily controlled.
- Please refer to
FIG. 1 , as an example to show the problems of light emitting diode packaging structure in the prior art. InFIG. 1 , the conventional light emittingdiode packaging structure 10 includes abase 11 on which apad 13 is provided; asubstrate 15; asemiconductor layer 17; anelectrode 18; a conductingwire 20 connecting theelectrode 18 to thepad 13 on thebase 11; and a phosphor encapsulant 22 having phosphor powder for sealing thepad 13, thesubstrate 15, thesemiconductor layer 17, theelectrode 18, and the conductingwire 20 on thebase 11. - The phosphor encapsulant 22 having a phosphor powder will be formed as a hemisphere shape during a dispensing process. Therefore, the light emitted from the LED may be changed according to the various thickness of the phosphor encapsulant even if the phosphor powder is evenly dispersed within the
encapsulating gel 22, because the light emitted from different regions of the semiconductor layer may pass through different thickness ofphosphor encapsulant 22. - The conventional light emitting diode packaging structure is limited to structure and thus cannot effectively evenly disperse the phosphor powder. Therefore, it is necessary to have an enhanced light emitting diode packaging structure to overcome the above problems so as to achieve a better color evenness, a faster fabricating process, and a higher yield.
- In order to solve the above and conventional technical problems, one of the objectives of the present invention is to improve the problem of uneven color of light of LED by forming a gel-blocking structure to block the phosphor layer and make the phosphor layer evenly disposed on the semiconductor layer.
- In accordance with one aspect of the invention, there is provided a LED (light emitting diode) packaging structure which includes a base, a LED chip, a gel-blocking structure and a phosphor layer. The LED chip is disposed on the base and electrically connected to the base. The LED chip has a substrate and at least a semiconductor layer formed on the substrate. The gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer. The phosphor layer is filled in a space defined by the gel-blocking structure, the substrate and the semiconductor layer.
- In an exemplary embodiment, the light emitting diode packaging structure further includes an encapsulant, disposed on the base and covering the LED chip.
- In another exemplary embodiment, the gel-blocking structure includes a first metal layer and a second metal layer formed on the first metal layer.
- In another exemplary embodiment, the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
- In another exemplary embodiment, the LED chip further includes a first electrode and a second electrode. The first electrode is disposed on a side of the substrate of the LED chip and connected to the base, and the second electrode is disposed on the semiconductor layer.
- In another exemplary embodiment, the first electrode is electrically connected to the substrate of the LED chip, and the second electrode is electrically connected to a pad on the base by a conducting wire. The first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire.
- In another exemplary embodiment, the LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
- In another exemplary embodiment, the phosphor layer includes at least a phosphor powder and an encapsulating gel.
- In accordance with another aspect of the invention, there is provided a method for fabricating a light emitting diode packaging structure, comprising the steps of providing a base; disposing a LED chip on the base and electrically connecting the LED chip to the base, which has a substrate and at least a semiconductor layer formed on the substrate; disposing a gel-blocking structure on the substrate of the LED chip and surround the semiconductor layer; and filling a phosphor layer in a space defined by the gel-blocking structure, the substrate, and the semiconductor layer.
- In an exemplary embodiment, the light emitting diode packaging structure further includes an encapsulant, disposed on the base and covering the LED chip.
- In another exemplary embodiment, the gel-blocking structure is made as forming a first metal layer by evaporation deposition at first and then forming a second metal layer on the first metal layer by electroplating.
- In another exemplary embodiment, the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
- In another exemplary embodiment, the LED chip further includes a first electrode and a second electrode, the first electrode is disposed on a side of the substrate of the LED chip and connected to the base, and the second electrode is disposed on the LED chip.
- In another exemplary embodiment, the first electrode is electrically connected to the substrate of the LED chip, and the second electrode is electrically connected to a pad on the base.
- In another exemplary embodiment, the second electrode is electrically connected to a pad on the base by a conducting wire.
- In another exemplary embodiment, the LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
- In another exemplary embodiment, the first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire.
- In another exemplary embodiment, the phosphor layer includes at least a kind of phosphor powder and a gel.
- The objections, functions, features and advantages of the invention will be appreciated more fully from the following further description thereof with reference to the accompanying drawings wherein:
-
FIG. 1 shows a prior art light emitting diode packaging structure. -
FIG. 2 shows a sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention. -
FIG. 3 shows another sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention. - The following exemplary examples will be described in detail with the appended drawings in order to make the aforementioned objectives, functional features, and advantages more clearly understood.
-
FIG. 2 shows a sectional view of a light emitting diode packaging structure according to a preferred embodiment of the present invention. The light emitting diode packaging structure includes abase 110, a LED chip, and aphosphor layer 210. Thephosphor layer 210 is made by mixing at least an encapsulatinggel 212 andphosphor power 214. - In particular, the LED chip is disposed on the
base 110 and electrically connected to thebase 110. The LED chip has asubstrate 150, at least asemiconductor layer 170 formed on thesubstrate 150, and a gel-blocking structure 190. The semiconductor layer will use different compounds, such as indium (In) compound or aluminum (Al) nitride, according to the color of the light to be emitted. Thesemiconductor layer 170 will emit a certain wavelength of light and the emitted light may excite thephosphor layer 210 to generate another wavelength of light. By mixing these two types of lights, an expected color of light is obtained. - It should be noticed that, the gel-
blocking structure 190 is disposed on thesubstrate 150 of the LED chip and surrounding thesemiconductor layer 170. The gel-blocking structure 190 includes afirst metal layer 192 and asecond metal layer 194 formed on thefirst metal layer 192. Due to that a metal layer may be quickly formed by electroplating, the gel-blockingstructure 190 will form thefirst metal layer 192 by evaporation deposition at first and then form thesecond metal layer 194 on thefirst metal layer 192 by electroplating. Therefore, it can effectively reduce the process time. In an exemplary embodiment, the thickness of thefirst metal layer 192 is in the range of 0.3 and 2 μm, and the thickness of thesecond metal layer 194 is in the range of 200 and 300 μm. Furthermore, the gel-blockingstructure 190 is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof. - Since the light emitting diode packaging structure has a gel-blocking
structure 190, the gel-blockingstructure 190 may block thephosphor layer 210 and make thephosphor layer 210 evenly cover on thesemiconductor layer 170 during the process of filling thephosphor layer 210, so as to solve the problem of uneven color of light of LED. - In an exemplary embodiment, the light emitting diode packaging structure further includes an
encapsulant 220 disposed on thebase 110 and covering the LED chip. - The light emitting diode packaging structure of the present invention includes a
first electrode 120 and asecond electrode 180, thefirst electrode 120 and thesecond electrode 180 are disposed differently. In an exemplary embodiment, thefirst electrode 120 is disposed on a side of thesubstrate 150 of the LED chip and is connected to thebase 110, and thesecond electrode 180 is disposed on thesemiconductor layer 170 of the LED chip. Therefore, a vertically connected light emitting diode packaging structure is obtained. In this vertically connected light emitting diode packaging structure, thefirst electrode 120 is electrically connected to thesubstrate 150 of the LED chip, and thesecond electrode 180 is electrically connected to apad 130 on thebase 110 by aconducting wire 200. Certainly, thefirst electrode 120 and thesecond electrode 180 may be both disposed on thesemiconductor layer 170 of thebase 110, as shown inFIG. 3 , and thefirst electrode 120 and thesecond electrode 180 are electrically connected topads base 110 by conductingwires - By utilizing the novel structure of the light emitting diode packaging structure of the present invention, since the light emitting diode packaging structure has a gel-blocking
structure 190, the gel-blockingstructure 190 may block thephosphor layer 210 and make thephosphor layer 210 and thephosphor powder 214 included therein evenly covered on the surface of thesemiconductor layer 170 during filling thephosphor layer 210. When the blue light emitted from thesemiconductor layer 170 passes through thephosphor layer 210, the color of the obtained white light is even because of the even thickness of the emittedphosphor layer 210 that makes theexcited phosphor powder 214 dispersed evenly. - The color of white light may be measured by any spectrometer in the market and shown in the Commission Internationale de l'clairage (CIE) coordinates. The CIE is an international organization which specifically establishes the standards of the luminance and color of light. The CIE coordinates are the figures showing the color of light in X-Y coordinates. Take white light for example, its coordinates are about CIE(x, y)=(0.3, 0.3).
- In an exemplary embodiment, the CIE(x) of the center of the LED of the present invention is about 0.30, the CIE(x) of the edge of the LED of the present invention is about 0.32. In comparison with the prior art LED, whose CIE(x) of the center is about 0.30 and whose CIE(x) of the edge is about 0.38, the LED of the present invention obviously enhances the distribution of the color of light. CIE(y) also has similar effect.
- It should be noticed that, the substrate of the present invention may be substituted by any suitable substitution, such as SiC, carbides, metal, and so on. The substrate of the present invention may also be selectively connected to a heat dissipation plate or bonding layer depending on the needs. These substitutions and equivalents are obvious for the person skilled in the art.
- While various exemplary embodiments of the present invention are described herein, it should be noted that the present invention may be embodied in other specific forms, including various modifications and improvements, without departing from the spirit and scope of the present invention. Thus, the described embodiments are to be considered in all respects only as illustrative and not restrictive.
Claims (20)
1. A light emitting diode packaging structure, comprising:
a base;
a LED chip disposed on the base and electrically connected to the base, the LED chip having a substrate and at least a semiconductor layer formed on the substrate; and
a gel-blocking structure disposed on the substrate of the LED chip and surrounding the semiconductor layer, the gel-blocking structure including a first metal layer and a second metal layer formed on the first metal layer.
2. A light emitting diode packaging structure according to claim 1 , further comprising a phosphor layer filled within a space defined by the gel-blocking structure, the substrate, and the semiconductor layer,
3. A light emitting diode packaging structure according to claim 1 , further comprising an encapsulant disposed on the base and covering the LED chip.
4. A light emitting diode packaging structure according to claim 1 , wherein the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
5. A light emitting diode packaging structure according to claim 1 , wherein the LED chip further includes a first electrode and a second electrode, wherein the first electrode is disposed on a side of the substrate of the LED chip and electrically connected to the base, and wherein the second electrode is disposed on the semiconductor layer.
6. A light emitting diode packaging structure according to claim 5 , wherein the first electrode is electrically connected to the substrate of the LED chip, and wherein the second electrode is electrically connected to a pad on the base.
7. A light emitting diode packaging structure according to claim 6 , wherein the second electrode is electrically connected to the pad on the base by a conducting wire.
8. A light emitting diode packaging structure according to claim 1 , wherein the LED chip further includes a first electrode and a second electrode, and wherein the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
9. A light emitting diode packaging structure according to claim 8 , wherein the first electrode and the second electrode are each electrically connected to a respective pad on the base by a respective conducting wire.
10. A light emitting diode packaging structure according to claim 1 , wherein the phosphor layer includes at least a phosphor powder and an encapsulating gel.
11. A method for fabricating a light emitting diode packaging structure, comprising:
providing a base;
disposing a LED chip on the base and electrically connecting the LED chip to the base, the LED chip including a substrate and a semiconductor layer formed on the substrate; and
disposing a gel-blocking structure on the substrate of the LED chip and surrounding the semiconductor layer by forming a first metal layer by evaporation deposition and forming a second metal layer on the first metal layer by electroplating.
12. A method according to claim 11 , further comprising filling a phosphor layer in a space defined by the gel-blocking structure, the substrate, and the semiconductor layer.
13. A method according to claim 11 , further comprising forming an encapsulant on the base and covering the LED chip.
14. A method according to claim 11 , wherein the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof.
15. A method according to claim 11 , wherein the LED chip further includes a first electrode and a second electrode, wherein the first electrode is disposed on a side of the substrate of the LED chip and is connected to the base, and wherein the second electrode is disposed on the semiconductor layer.
16. A method according to claim 15 , wherein the first electrode is electrically connected to the substrate of the LED chip, and wherein the second electrode is electrically connected to a pad on the base.
17. A method according to claim 16 , wherein the second electrode is electrically connected to the pad on the base by a conducting wire.
18. A method according to claim 11 , wherein the LED chip further includes a first electrode and a second electrode, and wherein the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip.
19. A method according to claim 18 , wherein the first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire.
20. A method according to claim 11 , wherein the phosphor layer includes at least a phosphor powder and an encapsulating gel.
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US13/462,785 US20120211791A1 (en) | 2009-01-16 | 2012-05-02 | LED Packaging Structure and Fabricating Method Thereof |
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TW98101732A TWI449221B (en) | 2009-01-16 | 2009-01-16 | Led packging structure and fabricating method thereof |
TW098101732 | 2009-01-16 | ||
US12/588,777 US8193551B2 (en) | 2009-01-16 | 2009-10-28 | LED packaging structure and fabricating method thereof |
US13/462,785 US20120211791A1 (en) | 2009-01-16 | 2012-05-02 | LED Packaging Structure and Fabricating Method Thereof |
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US12/588,777 Continuation US8193551B2 (en) | 2009-01-16 | 2009-10-28 | LED packaging structure and fabricating method thereof |
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US20120211791A1 true US20120211791A1 (en) | 2012-08-23 |
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US12/588,777 Active 2030-06-30 US8193551B2 (en) | 2009-01-16 | 2009-10-28 | LED packaging structure and fabricating method thereof |
US13/462,785 Abandoned US20120211791A1 (en) | 2009-01-16 | 2012-05-02 | LED Packaging Structure and Fabricating Method Thereof |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646773B (en) * | 2011-02-17 | 2015-02-04 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and processing procedure |
TW201238406A (en) * | 2011-03-11 | 2012-09-16 | Ind Tech Res Inst | Light emitting devices |
TW201304212A (en) * | 2011-07-01 | 2013-01-16 | Gio Optoelectronics Corp | Light-emitting apparatus and manufacturing methods thereof |
JP5899734B2 (en) * | 2011-09-16 | 2016-04-06 | 日亜化学工業株式会社 | Light emitting device |
JP6038443B2 (en) * | 2011-11-21 | 2016-12-07 | スタンレー電気株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
JP6025138B2 (en) * | 2012-02-14 | 2016-11-16 | スタンレー電気株式会社 | Light emitting device and manufacturing method thereof |
TWI528596B (en) * | 2012-03-16 | 2016-04-01 | 鴻海精密工業股份有限公司 | Led package and method of manufacturing the same |
JP6476567B2 (en) * | 2013-03-29 | 2019-03-06 | 日亜化学工業株式会社 | Light emitting device |
WO2016011606A1 (en) * | 2014-07-23 | 2016-01-28 | 深圳市国源铭光电科技有限公司 | Manufacturing method for led light source, and batch manufacturing method |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20020063301A1 (en) * | 2000-09-21 | 2002-05-30 | Tetsuya Hanamoto | Semiconductor light-emitting device and light-emitting display device therewith |
US6562643B2 (en) * | 2000-10-06 | 2003-05-13 | Solidlite Corporation | Packaging types of light-emitting diode |
US20040164675A1 (en) * | 2003-02-26 | 2004-08-26 | Bily Wang | White light source from light emitting diode |
US20060220050A1 (en) * | 2003-08-26 | 2006-10-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same |
US20070228387A1 (en) * | 2006-04-04 | 2007-10-04 | Gerald Negley | Uniform emission LED package |
US20080007939A1 (en) * | 2006-07-10 | 2008-01-10 | Samsung Electro-Mechanics Co., Ltd. | Direct-type backlight unit having surface light source |
US20080191224A1 (en) * | 2007-02-09 | 2008-08-14 | Emerson David T | Transparent LED Chip |
US20090014736A1 (en) * | 2007-07-11 | 2009-01-15 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US7556404B2 (en) * | 2005-07-25 | 2009-07-07 | Toyoda Gosei Co., Ltd. | Light source device with equalized colors split, and method of making same |
US20090212308A1 (en) * | 2005-08-26 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Method for producing an led chip and led chip |
US20090250709A1 (en) * | 2008-04-08 | 2009-10-08 | Advanced Optoelectronic Technology, Inc. | Led package and light source device using same |
US7642704B2 (en) * | 2004-06-21 | 2010-01-05 | Citizen Electronics Co., Ltd. | Light-emitting diode with a base |
US7956372B2 (en) * | 2005-09-20 | 2011-06-07 | Panasonic Electric Works Co., Ltd. | Light emitting device |
US8415698B2 (en) * | 2009-10-22 | 2013-04-09 | Lg Innotek Co., Ltd. | Light emitting device with encapsulant formed with barriers and light emitting device package having the same |
US8648370B2 (en) * | 2010-06-29 | 2014-02-11 | SemiLEDs Optoelectronics Co., Ltd. | Wafer-type light emitting device having precisely coated wavelength-converting layer |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3519986B2 (en) | 1999-05-28 | 2004-04-19 | 三洋電機株式会社 | Light emitting diode element |
DE10020465A1 (en) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with luminescence conversion element |
JP4770058B2 (en) | 2000-05-17 | 2011-09-07 | 日亜化学工業株式会社 | LIGHT EMITTING ELEMENT AND DEVICE |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
ATE525755T1 (en) | 2001-10-12 | 2011-10-15 | Nichia Corp | LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
JP3835276B2 (en) | 2001-12-14 | 2006-10-18 | 日亜化学工業株式会社 | Light emitting diode and method for forming the same |
KR100499129B1 (en) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | Light emitting laser diode and fabricatin method thereof |
TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
JP4415572B2 (en) | 2003-06-05 | 2010-02-17 | 日亜化学工業株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP4366154B2 (en) | 2003-09-16 | 2009-11-18 | スタンレー電気株式会社 | Semiconductor light emitting device and manufacturing method |
JP4923408B2 (en) | 2005-01-26 | 2012-04-25 | パナソニック株式会社 | Method for manufacturing light emitting device |
US7365371B2 (en) * | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
JP2007066969A (en) | 2005-08-29 | 2007-03-15 | Toshiba Lighting & Technology Corp | White light emitting diode and its fabrication process |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
JP2007311663A (en) | 2006-05-19 | 2007-11-29 | Sharp Corp | Manufacturing method for light emitting device, light emitting device, and manufacturing apparatus for light emitting device |
TW200824150A (en) * | 2006-11-29 | 2008-06-01 | Solidlite Corp | Package structure of light emitting diode having high divergence angle |
KR100982989B1 (en) * | 2008-05-19 | 2010-09-17 | 삼성엘이디 주식회사 | Light emitting diode package |
JP2010080553A (en) | 2008-09-24 | 2010-04-08 | Panasonic Corp | Luminous body and light source for illumination |
-
2009
- 2009-01-16 TW TW98101732A patent/TWI449221B/en not_active IP Right Cessation
- 2009-10-28 US US12/588,777 patent/US8193551B2/en active Active
- 2009-12-04 JP JP2009276376A patent/JP4923099B2/en not_active Expired - Fee Related
-
2012
- 2012-05-02 US US13/462,785 patent/US20120211791A1/en not_active Abandoned
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20020063301A1 (en) * | 2000-09-21 | 2002-05-30 | Tetsuya Hanamoto | Semiconductor light-emitting device and light-emitting display device therewith |
US6562643B2 (en) * | 2000-10-06 | 2003-05-13 | Solidlite Corporation | Packaging types of light-emitting diode |
US20040164675A1 (en) * | 2003-02-26 | 2004-08-26 | Bily Wang | White light source from light emitting diode |
US20060220050A1 (en) * | 2003-08-26 | 2006-10-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same |
US7642704B2 (en) * | 2004-06-21 | 2010-01-05 | Citizen Electronics Co., Ltd. | Light-emitting diode with a base |
US7556404B2 (en) * | 2005-07-25 | 2009-07-07 | Toyoda Gosei Co., Ltd. | Light source device with equalized colors split, and method of making same |
US20090212308A1 (en) * | 2005-08-26 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Method for producing an led chip and led chip |
US7956372B2 (en) * | 2005-09-20 | 2011-06-07 | Panasonic Electric Works Co., Ltd. | Light emitting device |
US20070228387A1 (en) * | 2006-04-04 | 2007-10-04 | Gerald Negley | Uniform emission LED package |
US20080007939A1 (en) * | 2006-07-10 | 2008-01-10 | Samsung Electro-Mechanics Co., Ltd. | Direct-type backlight unit having surface light source |
US20080191224A1 (en) * | 2007-02-09 | 2008-08-14 | Emerson David T | Transparent LED Chip |
US20090014736A1 (en) * | 2007-07-11 | 2009-01-15 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US20090250709A1 (en) * | 2008-04-08 | 2009-10-08 | Advanced Optoelectronic Technology, Inc. | Led package and light source device using same |
US8415698B2 (en) * | 2009-10-22 | 2013-04-09 | Lg Innotek Co., Ltd. | Light emitting device with encapsulant formed with barriers and light emitting device package having the same |
US8648370B2 (en) * | 2010-06-29 | 2014-02-11 | SemiLEDs Optoelectronics Co., Ltd. | Wafer-type light emitting device having precisely coated wavelength-converting layer |
Also Published As
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JP4923099B2 (en) | 2012-04-25 |
JP2010166031A (en) | 2010-07-29 |
TWI449221B (en) | 2014-08-11 |
TW201029219A (en) | 2010-08-01 |
US8193551B2 (en) | 2012-06-05 |
US20100181587A1 (en) | 2010-07-22 |
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