US20110155355A1 - Heat-dissipation unit coated with oxidation-resistant nano thin film and method of depositing the oxidation-resistant nano thin film thereof - Google Patents

Heat-dissipation unit coated with oxidation-resistant nano thin film and method of depositing the oxidation-resistant nano thin film thereof Download PDF

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US20110155355A1
US20110155355A1 US12/938,334 US93833410A US2011155355A1 US 20110155355 A1 US20110155355 A1 US 20110155355A1 US 93833410 A US93833410 A US 93833410A US 2011155355 A1 US2011155355 A1 US 2011155355A1
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heat
dissipation unit
thin film
oxidation
nano
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US12/938,334
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Ying-Tung Chen
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Asia Vital Components Co Ltd
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Assigned to ASIA VITAL COMPONENTS CO., LTD. reassignment ASIA VITAL COMPONENTS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, YING-TUNG, MR.
Publication of US20110155355A1 publication Critical patent/US20110155355A1/en
Priority to US13/971,611 priority Critical patent/US9121646B2/en
Priority to US13/971,577 priority patent/US20130333864A1/en
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0275—Arrangements for coupling heat-pipes together or with other structures, e.g. with base blocks; Heat pipe cores
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2245/00—Coatings; Surface treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a heat-dissipation unit coated with oxidation-resistant nano thin film and a method of depositing the oxidation-resistant nano thin film on the heat-dissipation unit.
  • the currently used chips are usually made of a semiconductor material, such as silicon. Since a chip internally includes a large quantity of metal wires and insulating thin films, and the thermal expansion coefficient of the metal wire material might be several times as high as that of the insulating material, the chip would usually crack and become damaged when it continuously works at a temperature higher than 90° C.
  • the chip To prevent the chip from overheat and burnout, waste heat produced by electric current must be removed from the electronic elements as soon as possible.
  • the chip To quickly remove the produced heat from the chip, the chip is usually arranged to contact with a copper sheet or is embedded in a metal-based ceramic sintered body, such as aluminum-based silicon carbide, which has high thermal conductivity.
  • a heat-dissipation unit is needed to help increasing the heat dissipation efficiency, so as to avoid an overheated and burnt-out chip.
  • the heat-dissipation unit is mainly a radiating fin assembly, a heat sink or a heat pipe.
  • a cooling fan can also be used to assist in forced convection, in order to achieve desired heat dissipating and cooling effects.
  • a metal-made heat radiating fin exposed to air would gradually become oxidized to result in electrical potential difference in the radiating fin. Such internal electrical potential difference would in turn cause electrochemical reaction to form metal oxide on the radiating fin.
  • a metal oxide has a thermal conducting efficiency much lower than that of a pure metal, and would therefore largely reduce the heat dissipating effect and thermal conducting efficiency of the metal radiating fin. When the oxidation becomes worse, the oxidized metal oxide having loose structure tends to peel off from the metal surface of the radiating fin to contaminate the chip in contact with the radiating fin.
  • an oxidized metal surface would change in color to adversely affect the appearance of the metal material.
  • a metal radiating fin formed through metal (such as copper or aluminum) powder sintering process and having a porous structure tends to more easily have reduced heat dissipation performance due to oxidation.
  • the metal radiating fin is usually externally coated with a layer of nickel or tin through a water solution process.
  • the nickel can be coated on the radiating fin in different ways, including electroplating and chemical plating (electroless plating).
  • the coating obtained through the water solution process is easily subjected to contamination, such as adsorption of acid group anions, which would corrode the semiconductor packaging.
  • the nickel coating or the tin coating usually has thermal conducting efficiency much lower than that of the frequently used copper radiating fin, and would therefore have adverse influence on the heat dissipating effect of copper.
  • a primary object of the present invention is to provide a heat-dissipation unit coated with oxidation-resistant nano thin film.
  • Another object of the present invention is to provide a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit.
  • the heat-dissipation unit coated with oxidation-resistant nano thin film according to the present invention includes a metal main body having a heat-absorbing portion and a heat-dissipating portion, and both of the heat-absorbing portion and the heat-dissipating portion are coated with at least a nano metal compound thin film.
  • the heat-dissipation unit can be a heat sink, a uniform temperature plate, a radiating fin assembly, a heat pipe, a loop heat pipe, or a water block.
  • the nano metal compound thin film is formed via a reaction of a reduction gas with at least a nano compound coating and the metal main body.
  • the metal main body can be made of copper, aluminum, nickel or stainless steel.
  • the method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit includes the steps of providing a heat-dissipation unit; forming at least a nano compound coating on a surface of the heat-dissipation unit; positioning the heat-dissipation unit in a high-temperature environment; supplying a reduction gas into the high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating on the surface of the heat-dissipation unit; and forming a nano metal compound thin film on the surface of the heat-dissipation unit after completion of the heat treatment and the reduction process.
  • the heat-dissipation unit can be a heat sink, a uniform temperature plate, a radiating fin assembly, a heat pipe, a loop heat pipe, or a water block.
  • the reduction gas can be any one of H 2 S, H 2 , CO, NH 3 , CH 4 , and any combination thereof, and is preferably H 2 .
  • the nano compound coating can be any oxide, nitride, carbide, and sulfide, and is preferably an oxide. The oxide is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , CaO, K 2 O, and ZnO.
  • the heat-dissipation unit is made of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • the nano compound coating is formed on the surface of the heat-dissipation unit through a process selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and sol-gel deposition.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • sol-gel deposition sol-gel deposition.
  • FIG. 1 a is a schematic view of a heat-dissipation unit according to a first embodiment of the present invention
  • FIG. 1 b is a schematic view of a heat-dissipation unit according to a second embodiment of the present invention
  • FIG. 1 c is a schematic view of a heat-dissipation unit according to a third embodiment of the present invention.
  • FIG. 1 d is a schematic view of a heat-dissipation unit according to a fourth embodiment of the present invention.
  • FIG. 1 e is a schematic view of a heat-dissipation unit according to a fifth embodiment of the present invention.
  • FIG. 1 f is a schematic view of a heat-dissipation unit according to a sixth embodiment of the present invention.
  • FIG. 1 g is an enlarged view of the circled area 1 g of FIG. 1 a;
  • FIG. 2 a is a schematic view of a heat-dissipation unit according to a seventh embodiment of the present invention.
  • FIG. 2 b is a schematic view of a heat-dissipation unit according to an eighth embodiment of the present invention.
  • FIG. 2 c is an enlarged view of the circled area 2 c of FIG. 2 a;
  • FIG. 3 is a flowchart showing the steps included in a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit according to a first embodiment of the present invention
  • FIG. 4 schematically illustrates a reduction reaction occurred on a heat-dissipation unit of the present invention and a nano compound coating thereof;
  • FIG. 5 is a flowchart showing the steps included in a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit according to a second embodiment of the present invention
  • FIG. 6 schematically illustrates the forming of a nano compound coating on a heat-dissipation unit of the present invention
  • FIG. 7 schematically illustrates a heat treatment and reduction process performed on a heat-dissipation unit of the present invention and a nano compound coating thereof;
  • FIGS. 8 to 14 are X-ray photoelectron spectroscopy spectra analyzing the surface of the heat-dissipation units according to different embodiments of the present invention.
  • a heat-dissipation unit 1 coated with oxidation-resistant nano thin film includes a metal main body 11 having a heat-absorbing portion 111 and a heat-dissipating portion 112 .
  • the heat-absorbing portion 111 is arranged on one side of the metal main body 11
  • the heat-dissipating portion 112 is arranged on an opposite side of the metal main body 11 .
  • the heat-absorbing portion 111 and the heat-dissipating portion 112 are externally coated with at least a nano metal compound thin film 2 .
  • the metal main body 11 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • the heat-dissipation unit 1 is a heat sink as shown in FIG. 1 a .
  • the heat-dissipation unit 1 is a uniform temperature plate as shown in FIG. 1 b .
  • the heat-dissipation unit 1 is a radiating fin assembly as shown in FIG. 1 c .
  • the heat-dissipation unit 1 is a heat pipe as shown in FIG. 1 d .
  • the heat-dissipation unit 1 is a loop heat pipe as shown in FIG. 1 e .
  • the heat-dissipation unit 1 is a water block as shown in FIG. 1 f.
  • the at least one nano metal compound thin film 2 is formed by reaction of at least a reduction gas 5 with at least one nano compound coating 6 and the metal main body 11 .
  • the at least one nano compound coating 6 is coated on an outer surface of the metal main body 11 , and the reduction gas is supplied to the metal main body 11 in a high-temperature environment, so that a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 and the nano compound coating 6 and the metal main body 11 .
  • the at least one nano metal compound thin film 2 is formed on the metal main body 11 .
  • the heat-dissipation unit 1 according to any one of the second, the fourth, the fifth and the sixth embodiment of the present invention includes a metal main body 11 defining a chamber 113 therein.
  • the chamber 113 is provided on an interior surface thereof with a wick structure 114 , over which at least a nano metal compound thin film 2 is coated, as can be most clearly seen in FIG. 2 c.
  • the metal main body 11 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • the wick structure 114 can be a grooved wick structure as shown in FIG. 2 a , a mesh wick structure as shown in FIG. 2 b , a copper sintered porous wick structure as shown FIG. 1 d , or a composite wick structure including any combination of the grooved, mesh, and copper sintered porous wick structures (not shown).
  • the wick structure 114 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • the heat-dissipation unit 1 can be any one of the uniform temperature plate shown in FIG. 1 b , the heat pipe shown in FIG. 1 d , the loop heat pipe shown in FIG. 1 e , and the water block shown in FIG. 1 f.
  • the at least one nano metal compound thin film 2 is formed by reaction of at least a reduction gas 5 with at least one nano compound coating 6 and the aforesaid wick structure 114 .
  • the wick structure 114 is coated with the at least one nano compound coating 6 , and the metal main body 11 is subjected to a heat treatment in a high-temperature environment while the reduction gas is supplied into the metal main body 11 , so that a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 and the nano compound coating 6 and the wick structure 114 .
  • the at least one nano metal compound thin film 2 is formed on the wick structure 114 .
  • the nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide; and is preferably formed of an oxide.
  • the oxide is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , CaO, K 2 O, and ZnO.
  • the reduction gas 5 can be any one of H 2 S, H 2 , CO, and NH 3 ; and is preferably H 2 .
  • only one single layer or a plurality of layers of the nano compound coating 6 can be formed.
  • the oxide, nitride, carbide and sulfide can be alternately coated.
  • FIG. 3 is a flowchart showing the steps included in a method according to a first embodiment of the present invention for depositing an oxidation-resistant nano thin film on a heat-dissipation unit. Please refer to FIGS. 1 a , 3 and 4 at the same time.
  • the method includes the following steps:
  • Step S 1 Providing a heat-dissipation unit 1 .
  • a heat-dissipation unit 1 is provided.
  • the heat-dissipation unit 1 can be a heat sink as shown in FIG. 1 a , a uniform temperature plate as shown in FIG. 1 b , a radiating fin assembly as shown in FIG. 1 c , a heat pipe as shown in FIG. 1 d , a loop heat pipe as shown in FIG. 1 e , or a water block as shown in FIG. 1 f .
  • the method according to the first embodiment of the present invention is explained based on a heat-dissipation unit 1 configured as a heat sink.
  • Step S 2 Forming at least a nano compound coating 6 on an outer surface of the heat-dissipation unit 1 (i.e. the heat sink).
  • At least a nano compound coating 6 is formed on an outer surface of the heat-dissipation unit 1 (i.e. the heat sink).
  • the nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide.
  • the method according to the first embodiment of the present invention is explained based on a nano compound coating 6 formed of an oxide.
  • the oxide is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , CaO, K 2 O, and ZnO. And, only one single layer or a plurality of layers of the nano compound coating 6 can be formed. In the case of forming a plurality of layers of the nano compound coating 6 , either different oxides are alternatively coated or the oxide, nitride, carbide and sulfide are alternately coated.
  • the nano compound coating 6 can be formed through physical vapor deposition (PVD), chemical vapor deposition (CVD), or sol-gel process.
  • the sol-gel process can be implemented in any one of the following manners: dip-coating deposition, settle-coating deposition, spin-coating deposition, brush-coating deposition, and wet-coating deposition.
  • the method according to the first embodiment of the present invention is explained based on at least one layer of the nano compound coating 6 formed on the heat-dissipation unit 1 through PVD.
  • the deposited nano compound coating 6 has a thickness about 1 nm-100 nm.
  • the target material is zirconium (Zr) or titanium (Ti)
  • the vacuum degree of the working environment is 10 ⁇ 3 mbar
  • Step S 3 Supplying a reduction gas 5 into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit 1 and the nano compound coating 6 on the surface of the heat-dissipation unit 1 .
  • the heat-dissipation unit 1 i.e. the heat sink
  • the reduction gas 5 is supplied into the high-temperature environment to perform a heat treatment and reduction process on the nano compound coating 6 on the heat-dissipation unit 1 .
  • the reduction gas 5 can be any one of H 2 S, H 2 , CO, and NH 3 ; and is preferably H 2 .
  • a reduction temperature for the reduction process is ranged between 600° C. and 1000° C., and is preferably ranged between 650° C. and 850° C.
  • Step S 4 Forming a nano metal compound thin film 2 on the heat-dissipation unit 1 after completion of the heat treatment and reduction process.
  • a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 (i.e. H 2 ) and the nano compound coating 6 and the heat-dissipation unit 1 . And, after completion of these reactions, at least a nano metal compound thin film 2 is formed on the heat-dissipation unit 1 (i.e. the heat sink).
  • FIG. 5 is a flowchart showing the steps included in a method according to a second embodiment of the present invention for depositing an oxidation-resistant nano thin film on a heat-dissipation unit. Please refer to FIGS. 1 d , 5 , 6 and 7 at the same time.
  • the method includes the following steps:
  • Step S 1 Providing a heat-dissipation unit 1 internally provided with a wick structure 114 .
  • a heat-dissipation 1 internally provided with a wick structure 114 is provided.
  • the heat-dissipation unit 1 can be a uniform temperature plate as shown in FIG. 1 b , a heat pipe as shown in FIG. 1 d , a loop heat pipe as shown in FIG. 1 e , or a water block as shown in FIG. 1 f .
  • the method according to the second embodiment of the present invention is explained based on a heat-dissipation unit 1 configured as a heat pipe shown in FIG. 1 d.
  • Step S 2 Forming at least a nano compound coating 6 over the wick structure 114 in the heat-dissipation unit 1 through a sol-gel process.
  • At least a nano compound coating 6 is formed on the wick structure 114 in the heat-dissipation unit 1 (i.e. the heat pipe).
  • the nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide.
  • the method according to the second embodiment of the present invention is explained based on a nano compound coating 6 formed of an oxide.
  • the oxide is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , CaO, K 2 O, and ZnO. In the illustrated second embodiment, the oxide is Al 2 O 3 . And, only one single layer or a plurality of layers of the nano compound coating 6 can be formed.
  • the nano compound coating 6 can be formed through sol-gel process.
  • the sol-gel process can be implemented in any one of the following manners: dip-coating deposition, settle-coating deposition, spin-coating deposition, brush-coating deposition, and wet-coating deposition.
  • the oxide nano thin film 6 can also be formed through other types of deposition according to the sol-gel process.
  • the sol-gel process Al 2 O 3 particles are soaked in a water solution 3 , and the water solution 3 along with the Al 2 O 3 particles are poured into a tank 4 and thoroughly mixed, so that the Al 2 O 3 particles are evenly dispersed in the water solution 3 contained in the tank 4 .
  • Step S 3 Supplying a reduction gas 5 into a high-temperature environment to perform a heat treatment and a reduction process on the wick structure 114 of the heat-dissipation unit 1 and the nano compound coating 6 on the surface of the wick structure 114 .
  • the heat-dissipation unit 1 (i.e. the heat pipe) is positioned in a high-temperature environment, and the reduction gas 5 is supplied into the high-temperature environment to perform a heat treatment and a reduction process on the wick structure 114 and the nano compound coating 6 .
  • the reduction gas 5 can be any one of H 25 , H 2 , CO, and NH 3 ; and is preferably H 2 .
  • a reduction temperature for the reduction process is ranged between 600° C. and 1000° C., and is preferably ranged between 650° C. and 850° C.
  • Step S 4 Forming a nano metal compound thin film 2 on the wick structure 114 of the heat-dissipation unit 1 after completion of the heat treatment and reduction process.
  • a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 (i.e. H 2 ) and the nano compound coating 6 and the wick structure 114 . And, after completion of these reactions, at least a nano metal compound thin film 2 is formed on the wick structure 114 of the heat-dissipation unit 1 .
  • the Al 2 O 3 used is a nano-sol surface pretreatment chemical (Product Number A-100) supplied by Chung-Hsin Technological Consultants, Inc. (Taiwan).
  • This nano-sol surface pretreatment chemical mainly contains 1.0% of nanoparticles of Al 2 O 3 having a particle size 10 nm, and has the product characteristics of a specific gravity of 1.01 ⁇ 0.03; a flash point higher than 100° C.; a colorless and transparent appearance; a pH value of 7.0 ⁇ 0.5; and a working temperature of 10-40° C.
  • the structure of the formed nano metal compound thin films is analyzed via X-ray photoelectron spectroscopy (XPS) technique.
  • XPS X-ray photoelectron spectroscopy
  • Step 1 Performing a full scan on the nano metal compound thin film with a spot size of 0.1 ⁇ ;
  • Step 2 Etching downward to two different depths of 10 ⁇ and 500 ⁇ below the surface of the nano metal compound thin film, and performing a multiplex (local) scan with a spot size of 0.05 ⁇ ;
  • Step 3 Comparing the obtained XPS spectra with standard spectra and performing a quantitative analysis.
  • FIGS. 8 and 13 are full-scan XPS spectra of specimens with the formed nano metal compound thin films. As can be seen from the spectra, there are copper, aluminum and oxygen contained in the nano metal compound thin films.
  • FIGS. 9 and 12 are local-scan XPS spectra showing copper binding energy values.
  • the local scan is performed at etching depths of 1 nm and 50 nm into the material.
  • FIGS. 10 , 11 and 14 are local-scan XPS spectra showing aluminum binding energy values.
  • the local scan is performed at etching depths of 1 nm and 50 nm into the material.
  • This layer of compound is a chemical compound of Al 2 O 3 and CuO, as shown in FIG. 11 .
  • Al 2 O 3 74.86 eV
  • Al 2 O 3 still appears, as shown in FIG. 14 .
  • the Al 2 O 3 sol is a highly strong oxidant.
  • the Al 2 O 3 sol When the Al 2 O 3 sol is coated on the surface of copper, it will cause oxidation of the copper quickly, particularly at a high temperature.
  • H 2 is used in a high-temperature environment to reduce the heat-dissipation unit coated with copper oxide and aluminum oxide, the copper oxide on the surface of the heat-dissipation unit is reduced and reacts with the aluminum oxide to form a compound CuAl 2 O 3 , as shown in FIG. 8 .
  • This layer of compound is able to stop oxidation of copper and forms an oxidation-resistant nano thin film.

Abstract

A heat-dissipation unit coated with oxidation-resistant nano thin film includes a metal main body having a heat-absorbing portion and a heat-dissipating portion, both of which are coated with at least a nano metal compound thin film. To form the nano metal compound thin film on the heat-dissipation unit, first form at least a nano compound coating on an outer surface of the heat-dissipation unit, and then supply a reduction gas into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating thereof, and finally, a nano metal compound thin film is formed on the surface of the heat-dissipation unit after completion of the heat treatment and the reduction process. With the nano metal compound thin film, the heat-dissipation unit is protected against formation of oxide on its surface and accordingly against occurrence of increased thermal resistance thereof.

Description

  • This application claims the priority benefit of Taiwan patent application number 098145478 filed on Dec. 29, 2009.
    • FIELD OF THE INVENTION
  • The present invention relates to a heat-dissipation unit coated with oxidation-resistant nano thin film and a method of depositing the oxidation-resistant nano thin film on the heat-dissipation unit.
    • BACKGROUND OF THE INVENTION
  • When an electronic device operates, electronic elements inside the device would produce heat. The heat is produced mainly by an operating chip during operation thereof. With the constantly increased performance thereof, the chip's power is now close to 100 W and the temperature thereof would exceed 100° C. if no proper heat dissipation mechanism is provided.
  • The currently used chips are usually made of a semiconductor material, such as silicon. Since a chip internally includes a large quantity of metal wires and insulating thin films, and the thermal expansion coefficient of the metal wire material might be several times as high as that of the insulating material, the chip would usually crack and become damaged when it continuously works at a temperature higher than 90° C.
  • To prevent the chip from overheat and burnout, waste heat produced by electric current must be removed from the electronic elements as soon as possible. To quickly remove the produced heat from the chip, the chip is usually arranged to contact with a copper sheet or is embedded in a metal-based ceramic sintered body, such as aluminum-based silicon carbide, which has high thermal conductivity. In addition, a heat-dissipation unit is needed to help increasing the heat dissipation efficiency, so as to avoid an overheated and burnt-out chip. The heat-dissipation unit is mainly a radiating fin assembly, a heat sink or a heat pipe. A cooling fan can also be used to assist in forced convection, in order to achieve desired heat dissipating and cooling effects.
  • A metal-made heat radiating fin exposed to air would gradually become oxidized to result in electrical potential difference in the radiating fin. Such internal electrical potential difference would in turn cause electrochemical reaction to form metal oxide on the radiating fin. A metal oxide has a thermal conducting efficiency much lower than that of a pure metal, and would therefore largely reduce the heat dissipating effect and thermal conducting efficiency of the metal radiating fin. When the oxidation becomes worse, the oxidized metal oxide having loose structure tends to peel off from the metal surface of the radiating fin to contaminate the chip in contact with the radiating fin.
  • Further, an oxidized metal surface would change in color to adversely affect the appearance of the metal material.
  • And, a metal radiating fin formed through metal (such as copper or aluminum) powder sintering process and having a porous structure tends to more easily have reduced heat dissipation performance due to oxidation. To prevent oxidation, the metal radiating fin is usually externally coated with a layer of nickel or tin through a water solution process. The nickel can be coated on the radiating fin in different ways, including electroplating and chemical plating (electroless plating). However, the coating obtained through the water solution process is easily subjected to contamination, such as adsorption of acid group anions, which would corrode the semiconductor packaging.
  • Further, the nickel coating or the tin coating usually has thermal conducting efficiency much lower than that of the frequently used copper radiating fin, and would therefore have adverse influence on the heat dissipating effect of copper.
  • It is therefore tried by the inventor to develop a heat-dissipation unit coated with oxidation-resistant nano thin film and a method of depositing such oxidation-resistant nano thin film on the heat-dissipation unit, in order to overcome the drawbacks in the prior art.
    • SUMMARY OF THE INVENTION
  • A primary object of the present invention is to provide a heat-dissipation unit coated with oxidation-resistant nano thin film.
  • Another object of the present invention is to provide a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit.
  • To achieve the above and other objects, the heat-dissipation unit coated with oxidation-resistant nano thin film according to the present invention includes a metal main body having a heat-absorbing portion and a heat-dissipating portion, and both of the heat-absorbing portion and the heat-dissipating portion are coated with at least a nano metal compound thin film. The heat-dissipation unit can be a heat sink, a uniform temperature plate, a radiating fin assembly, a heat pipe, a loop heat pipe, or a water block. The nano metal compound thin film is formed via a reaction of a reduction gas with at least a nano compound coating and the metal main body. The metal main body can be made of copper, aluminum, nickel or stainless steel.
  • To achieve the above and other objects, the method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit according to the present invention includes the steps of providing a heat-dissipation unit; forming at least a nano compound coating on a surface of the heat-dissipation unit; positioning the heat-dissipation unit in a high-temperature environment; supplying a reduction gas into the high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating on the surface of the heat-dissipation unit; and forming a nano metal compound thin film on the surface of the heat-dissipation unit after completion of the heat treatment and the reduction process. The heat-dissipation unit can be a heat sink, a uniform temperature plate, a radiating fin assembly, a heat pipe, a loop heat pipe, or a water block. The reduction gas can be any one of H2S, H2, CO, NH3, CH4, and any combination thereof, and is preferably H2. The nano compound coating can be any oxide, nitride, carbide, and sulfide, and is preferably an oxide. The oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO. The heat-dissipation unit is made of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel. The nano compound coating is formed on the surface of the heat-dissipation unit through a process selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and sol-gel deposition. Using the oxidation-resistant nano thin film deposition method of the present invention, at least a nano metal compound thin film can be formed on the heat-dissipation unit to protect the latter against formation of oxide on its surface and accordingly against occurrence of increased thermal resistance thereof.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings, wherein
  • FIG. 1 a is a schematic view of a heat-dissipation unit according to a first embodiment of the present invention;
  • FIG. 1 b is a schematic view of a heat-dissipation unit according to a second embodiment of the present invention;
  • FIG. 1 c is a schematic view of a heat-dissipation unit according to a third embodiment of the present invention;
  • FIG. 1 d is a schematic view of a heat-dissipation unit according to a fourth embodiment of the present invention;
  • FIG. 1 e is a schematic view of a heat-dissipation unit according to a fifth embodiment of the present invention;
  • FIG. 1 f is a schematic view of a heat-dissipation unit according to a sixth embodiment of the present invention;
  • FIG. 1 g is an enlarged view of the circled area 1 g of FIG. 1 a;
  • FIG. 2 a is a schematic view of a heat-dissipation unit according to a seventh embodiment of the present invention;
  • FIG. 2 b is a schematic view of a heat-dissipation unit according to an eighth embodiment of the present invention;
  • FIG. 2 c is an enlarged view of the circled area 2 c of FIG. 2 a;
  • FIG. 3 is a flowchart showing the steps included in a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit according to a first embodiment of the present invention;
  • FIG. 4 schematically illustrates a reduction reaction occurred on a heat-dissipation unit of the present invention and a nano compound coating thereof;
  • FIG. 5 is a flowchart showing the steps included in a method of depositing an oxidation-resistant nano thin film on a heat-dissipation unit according to a second embodiment of the present invention;
  • FIG. 6 schematically illustrates the forming of a nano compound coating on a heat-dissipation unit of the present invention;
  • FIG. 7 schematically illustrates a heat treatment and reduction process performed on a heat-dissipation unit of the present invention and a nano compound coating thereof; and
  • FIGS. 8 to 14 are X-ray photoelectron spectroscopy spectra analyzing the surface of the heat-dissipation units according to different embodiments of the present invention.
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The present invention will now be described with some preferred embodiments thereof and with reference to the accompanying drawings. For the purpose of easy to understand, elements that are the same in the preferred embodiments are denoted by the same reference numerals.
  • Please refer to FIGS. 1 a, 1 b, 1 c, 1 d, 1 e, 1 f, 1 g and 4. As shown, a heat-dissipation unit 1 coated with oxidation-resistant nano thin film according to any one of a first to a sixth embodiment of the present invention includes a metal main body 11 having a heat-absorbing portion 111 and a heat-dissipating portion 112. The heat-absorbing portion 111 is arranged on one side of the metal main body 11, and the heat-dissipating portion 112 is arranged on an opposite side of the metal main body 11. The heat-absorbing portion 111 and the heat-dissipating portion 112 are externally coated with at least a nano metal compound thin film 2.
  • The metal main body 11 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • In the first embodiment of the present invention, the heat-dissipation unit 1 is a heat sink as shown in FIG. 1 a. In the second embodiment of the present invention, the heat-dissipation unit 1 is a uniform temperature plate as shown in FIG. 1 b. In the third embodiment of the present invention, the heat-dissipation unit 1 is a radiating fin assembly as shown in FIG. 1 c. In the fourth embodiment of the present invention, the heat-dissipation unit 1 is a heat pipe as shown in FIG. 1 d. In the fifth embodiment of the present invention, the heat-dissipation unit 1 is a loop heat pipe as shown in FIG. 1 e. In the sixth embodiment of the present invention, the heat-dissipation unit 1 is a water block as shown in FIG. 1 f.
  • The at least one nano metal compound thin film 2 is formed by reaction of at least a reduction gas 5 with at least one nano compound coating 6 and the metal main body 11. The at least one nano compound coating 6 is coated on an outer surface of the metal main body 11, and the reduction gas is supplied to the metal main body 11 in a high-temperature environment, so that a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 and the nano compound coating 6 and the metal main body 11. At completion of the reactions, the at least one nano metal compound thin film 2 is formed on the metal main body 11.
  • Please refer to FIGS. 1 b, 1 d, 1 e, 1 f, 2 a, 2 b, 2 c and 7. As shown, the heat-dissipation unit 1 according to any one of the second, the fourth, the fifth and the sixth embodiment of the present invention includes a metal main body 11 defining a chamber 113 therein. The chamber 113 is provided on an interior surface thereof with a wick structure 114, over which at least a nano metal compound thin film 2 is coated, as can be most clearly seen in FIG. 2 c.
  • The metal main body 11 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • The wick structure 114 can be a grooved wick structure as shown in FIG. 2 a, a mesh wick structure as shown in FIG. 2 b, a copper sintered porous wick structure as shown FIG. 1 d, or a composite wick structure including any combination of the grooved, mesh, and copper sintered porous wick structures (not shown).
  • The wick structure 114 is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
  • The heat-dissipation unit 1 can be any one of the uniform temperature plate shown in FIG. 1 b, the heat pipe shown in FIG. 1 d, the loop heat pipe shown in FIG. 1 e, and the water block shown in FIG. 1 f.
  • The at least one nano metal compound thin film 2 is formed by reaction of at least a reduction gas 5 with at least one nano compound coating 6 and the aforesaid wick structure 114. The wick structure 114 is coated with the at least one nano compound coating 6, and the metal main body 11 is subjected to a heat treatment in a high-temperature environment while the reduction gas is supplied into the metal main body 11, so that a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 and the nano compound coating 6 and the wick structure 114. At completion of the reactions, the at least one nano metal compound thin film 2 is formed on the wick structure 114.
  • In the above embodiments, the nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide; and is preferably formed of an oxide. The oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO. And, the reduction gas 5 can be any one of H2S, H2, CO, and NH3; and is preferably H2.
  • In the above embodiments, only one single layer or a plurality of layers of the nano compound coating 6 can be formed. In the case of forming a plurality of layers of the nano compound coating 6, the oxide, nitride, carbide and sulfide can be alternately coated.
  • FIG. 3 is a flowchart showing the steps included in a method according to a first embodiment of the present invention for depositing an oxidation-resistant nano thin film on a heat-dissipation unit. Please refer to FIGS. 1 a, 3 and 4 at the same time. The method includes the following steps:
  • Step S1: Providing a heat-dissipation unit 1.
  • A heat-dissipation unit 1 is provided. The heat-dissipation unit 1 can be a heat sink as shown in FIG. 1 a, a uniform temperature plate as shown in FIG. 1 b, a radiating fin assembly as shown in FIG. 1 c, a heat pipe as shown in FIG. 1 d, a loop heat pipe as shown in FIG. 1 e, or a water block as shown in FIG. 1 f. The method according to the first embodiment of the present invention is explained based on a heat-dissipation unit 1 configured as a heat sink.
  • Step S2: Forming at least a nano compound coating 6 on an outer surface of the heat-dissipation unit 1 (i.e. the heat sink).
  • At least a nano compound coating 6 is formed on an outer surface of the heat-dissipation unit 1 (i.e. the heat sink). The nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide. The method according to the first embodiment of the present invention is explained based on a nano compound coating 6 formed of an oxide. The oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO. And, only one single layer or a plurality of layers of the nano compound coating 6 can be formed. In the case of forming a plurality of layers of the nano compound coating 6, either different oxides are alternatively coated or the oxide, nitride, carbide and sulfide are alternately coated.
  • The nano compound coating 6 can be formed through physical vapor deposition (PVD), chemical vapor deposition (CVD), or sol-gel process. The sol-gel process can be implemented in any one of the following manners: dip-coating deposition, settle-coating deposition, spin-coating deposition, brush-coating deposition, and wet-coating deposition.
  • The method according to the first embodiment of the present invention is explained based on at least one layer of the nano compound coating 6 formed on the heat-dissipation unit 1 through PVD. The deposited nano compound coating 6 has a thickness about 1 nm-100 nm. In the process of PVD, when the heat-dissipation unit 1 has a temperature about 150° C., the target material is zirconium (Zr) or titanium (Ti), and the vacuum degree of the working environment is 10−3 mbar, a nano compound coating 6 with high density and smoothness can be obtained.
  • Step S3: Supplying a reduction gas 5 into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit 1 and the nano compound coating 6 on the surface of the heat-dissipation unit 1.
  • As shown in FIG. 4, the heat-dissipation unit 1 (i.e. the heat sink) is positioned in a high-temperature environment, and the reduction gas 5 is supplied into the high-temperature environment to perform a heat treatment and reduction process on the nano compound coating 6 on the heat-dissipation unit 1. The reduction gas 5 can be any one of H2S, H2, CO, and NH3; and is preferably H2. A reduction temperature for the reduction process is ranged between 600° C. and 1000° C., and is preferably ranged between 650° C. and 850° C.
  • Step S4: Forming a nano metal compound thin film 2 on the heat-dissipation unit 1 after completion of the heat treatment and reduction process.
  • After completion of the heat treatment and the reduction process in the step S3, a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 (i.e. H2) and the nano compound coating 6 and the heat-dissipation unit 1. And, after completion of these reactions, at least a nano metal compound thin film 2 is formed on the heat-dissipation unit 1 (i.e. the heat sink).
  • FIG. 5 is a flowchart showing the steps included in a method according to a second embodiment of the present invention for depositing an oxidation-resistant nano thin film on a heat-dissipation unit. Please refer to FIGS. 1 d, 5, 6 and 7 at the same time. The method includes the following steps:
  • Step S1: Providing a heat-dissipation unit 1 internally provided with a wick structure 114.
  • A heat-dissipation 1 internally provided with a wick structure 114 is provided. The heat-dissipation unit 1 can be a uniform temperature plate as shown in FIG. 1 b, a heat pipe as shown in FIG. 1 d, a loop heat pipe as shown in FIG. 1 e, or a water block as shown in FIG. 1 f. The method according to the second embodiment of the present invention is explained based on a heat-dissipation unit 1 configured as a heat pipe shown in FIG. 1 d.
  • Step S2: Forming at least a nano compound coating 6 over the wick structure 114 in the heat-dissipation unit 1 through a sol-gel process.
  • At least a nano compound coating 6 is formed on the wick structure 114 in the heat-dissipation unit 1 (i.e. the heat pipe). The nano compound coating 6 can be formed of any oxide, nitride, carbide or sulfide. The method according to the second embodiment of the present invention is explained based on a nano compound coating 6 formed of an oxide. The oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO. In the illustrated second embodiment, the oxide is Al2O3. And, only one single layer or a plurality of layers of the nano compound coating 6 can be formed. In the case of forming a plurality of layers of the nano compound coating 6, either different oxides are alternatively coated or the oxide, nitride, carbide and sulfide are alternately coated. The nano compound coating 6 can be formed through sol-gel process. The sol-gel process can be implemented in any one of the following manners: dip-coating deposition, settle-coating deposition, spin-coating deposition, brush-coating deposition, and wet-coating deposition.
  • In the illustrated second embodiment, while the oxide nano thin film 6 is formed through dip-coating deposition, it is understood the oxide nano thin film 6 can also be formed through other types of deposition according to the sol-gel process. As shown in FIG. 6, in the sol-gel process, Al2O3 particles are soaked in a water solution 3, and the water solution 3 along with the Al2O3 particles are poured into a tank 4 and thoroughly mixed, so that the Al2O3 particles are evenly dispersed in the water solution 3 contained in the tank 4. Then, immerse the portion of the heat-dissipation unit 1 with the wick structure 114 in the water solution 3 contained in the tank 4, and allow the heat-dissipation unit 1 to remain still in the water solution 3 in the tank 4 for a predetermined period of time. Finally, remove the heat-dissipation unit 1 from the water solution 3 or drain off the water solution 3 from the tank 4, so that the Al2O3 particles are attached to an outer surface of the wick structure 114.
  • Step S3: Supplying a reduction gas 5 into a high-temperature environment to perform a heat treatment and a reduction process on the wick structure 114 of the heat-dissipation unit 1 and the nano compound coating 6 on the surface of the wick structure 114.
  • The heat-dissipation unit 1 (i.e. the heat pipe) is positioned in a high-temperature environment, and the reduction gas 5 is supplied into the high-temperature environment to perform a heat treatment and a reduction process on the wick structure 114 and the nano compound coating 6. The reduction gas 5 can be any one of H25, H2, CO, and NH3; and is preferably H2. A reduction temperature for the reduction process is ranged between 600° C. and 1000° C., and is preferably ranged between 650° C. and 850° C.
  • Step S4: Forming a nano metal compound thin film 2 on the wick structure 114 of the heat-dissipation unit 1 after completion of the heat treatment and reduction process.
  • After completion of the reduction process in the step S3, a diffusion reaction and a reduction-oxidation reaction occur between the reduction gas 5 (i.e. H2) and the nano compound coating 6 and the wick structure 114. And, after completion of these reactions, at least a nano metal compound thin film 2 is formed on the wick structure 114 of the heat-dissipation unit 1.
  • In the methods according to different embodiments of the present invention, the Al2O3 used is a nano-sol surface pretreatment chemical (Product Number A-100) supplied by Chung-Hsin Technological Consultants, Inc. (Taiwan). This nano-sol surface pretreatment chemical mainly contains 1.0% of nanoparticles of Al2O3 having a particle size 10 nm, and has the product characteristics of a specific gravity of 1.01±0.03; a flash point higher than 100° C.; a colorless and transparent appearance; a pH value of 7.0±0.5; and a working temperature of 10-40° C.
  • After completion of the deposition of the oxidation-resistant nano thin film on the heat-dissipation unit using the methods according to different embodiments of the present invention, the structure of the formed nano metal compound thin films is analyzed via X-ray photoelectron spectroscopy (XPS) technique. In formation about the equipment used in the XPS analysis is as follows:
  • Name of equipment supplier: PerkinElmer (USA)
  • Voltage: 15 KV
  • Watt: 300 W
  • Vacuum degree: 2.5*10−9 torr
  • Following steps are included in the XPS analysis of the nano metal compound thin films formed according to the present invention:
  • Step 1: Performing a full scan on the nano metal compound thin film with a spot size of 0.1 Å;
  • Step 2: Etching downward to two different depths of 10 Å and 500 Å below the surface of the nano metal compound thin film, and performing a multiplex (local) scan with a spot size of 0.05 Å; and
  • Step 3: Comparing the obtained XPS spectra with standard spectra and performing a quantitative analysis.
  • Please refer to FIGS. 8 and 13 that are full-scan XPS spectra of specimens with the formed nano metal compound thin films. As can be seen from the spectra, there are copper, aluminum and oxygen contained in the nano metal compound thin films.
  • FIGS. 9 and 12 are local-scan XPS spectra showing copper binding energy values. The local scan is performed at etching depths of 1 nm and 50 nm into the material. As can be seen from FIG. 12, there is a layer of copper oxide less than 1 nm in thickness formed on the surface of the material, while copper exists 1 nm below the surface of the material.
  • FIGS. 10, 11 and 14 are local-scan XPS spectra showing aluminum binding energy values. The local scan is performed at etching depths of 1 nm and 50 nm into the material. As can be seen from these figures, there is a layer of Al2O3 compound (77.44 eV) on the material surface. This layer of compound is a chemical compound of Al2O3 and CuO, as shown in FIG. 11. When the local scan is performed at an etching depth of 1 nm, Al2O3 (74.86 eV) appears; and when the local scan is performed at an etching depth of 50 nm, Al2O3 still appears, as shown in FIG. 14.
  • From the above analysis, it can be found the Al2O3 sol is a highly strong oxidant. When the Al2O3 sol is coated on the surface of copper, it will cause oxidation of the copper quickly, particularly at a high temperature. When H2 is used in a high-temperature environment to reduce the heat-dissipation unit coated with copper oxide and aluminum oxide, the copper oxide on the surface of the heat-dissipation unit is reduced and reacts with the aluminum oxide to form a compound CuAl2O3, as shown in FIG. 8. This layer of compound is able to stop oxidation of copper and forms an oxidation-resistant nano thin film.

Claims (19)

1. A heat-dissipation unit coated with oxidation-resistant nano thin film, comprising a metal main body having a heat-absorbing portion and a heat-dissipating portion; and both of the heat-absorbing portion and the heat-dissipating portion being coated with at least a nano metal compound thin film.
2. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 1, wherein the heat-dissipation unit is selected from the group consisting of a heat sink, a uniform temperature plate, a radiating fin assembly, a heat pipe, a loop heat pipe, and a water block.
3. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 1, wherein the nano metal compound thin film is formed via a reaction of a reduction gas with at least a nano compound coating and the metal main body.
4. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 3, wherein the nano compound coating is formed of a material selected from the group consisting of oxide, nitride, carbide, and sulfide.
5. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 4, wherein the oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO.
6. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 1, wherein the metal main body is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
7. A heat-dissipation unit coated with oxidation-resistant nano thin film, comprising a metal main body internally defining a chamber; the chamber being provided on an interior surface with a wick structure, and the wick structure being coated with at least a nano metal compound thin film.
8. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 7, wherein the heat-dissipation unit is selected from the group consisting of a uniform temperature plate, a heat pipe, a flat heat pipe, a loop heat pipe, and a water block.
9. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 8, wherein the nano metal compound thin film is formed via a reaction of a reduction gas with at least a nano compound coating and the wick structure.
10. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 9, wherein the nano compound coating is formed of a material selected from the group consisting of nitride, carbide, sulfide, and oxide.
11. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 10, wherein the oxide is selected from the group consisting of SiO2, TiO2, Al2O3, ZrO2, CaO, K2O, and ZnO.
12. The heat-dissipation unit coated with oxidation-resistant nano thin film as claimed in claim 7, wherein the metal main body is formed of a material selected from the group consisting of copper, aluminum, nickel, and stainless steel.
13. A method of depositing oxidation-resistant nano thin film on heat-dissipation unit, comprising the following steps:
providing a heat-dissipation unit;
forming at least a nano compound coating on a surface of the heat-dissipation unit;
supplying a reduction gas into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating on the surface of the heat-dissipation unit; and
forming a nano metal compound thin film on the heat-dissipation unit after completion of the heat treatment and the reduction process.
14. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 13, wherein the heat-dissipation unit is selected from the group consisting of a heat sink, a radiating fin assembly, a heat pipe, a flat heat pipe, a loop heat pipe, and a water block.
15. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 13, wherein the reduction gas is selected from the group consisting of H2S, H2, CO, and NH3.
16. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 13, wherein the reduction process is performed at a temperature ranged between 600° C. and 1000° C.
17. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 13, wherein the reduction process is performed at a temperature ranged between 650° C. and 850° C.
18. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 13, wherein the nano compound coating is formed on the surface of the heat-dissipation unit through a process selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and sol-gel process.
19. The method of depositing oxidation-resistant nano thin film on heat-dissipation unit as claimed in claim 18, wherein the sol-gel process is implemented in a manner selected from the group consisting of dip-coating deposition, settle-coating deposition, spin-coating deposition, brush-coating deposition, and wet-coating deposition.
US12/938,334 2009-12-29 2010-11-02 Heat-dissipation unit coated with oxidation-resistant nano thin film and method of depositing the oxidation-resistant nano thin film thereof Abandoned US20110155355A1 (en)

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