US20110053316A1 - Organic Thin Film Transistor With Tunneling Barrier Layer and Method for Manufacturing the Same - Google Patents
Organic Thin Film Transistor With Tunneling Barrier Layer and Method for Manufacturing the Same Download PDFInfo
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- US20110053316A1 US20110053316A1 US12/940,626 US94062610A US2011053316A1 US 20110053316 A1 US20110053316 A1 US 20110053316A1 US 94062610 A US94062610 A US 94062610A US 2011053316 A1 US2011053316 A1 US 2011053316A1
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
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- 238000009413 insulation Methods 0.000 claims abstract description 20
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- 238000000059 patterning Methods 0.000 claims description 6
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 229920001400 block copolymer Polymers 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
Abstract
Description
- This application claims the benefit of the Korean Patent Application No. P2005-134409, filed on Dec. 29, 2005, which is hereby incorporated by reference in its entirety.
- 1. Field of the Invention
- The embodiments of the invention relate to a transistor and a method for manufacturing the same, and more particularly, to an organic thin film transistor and a method for manufacturing the same.
- 2. Discussion of the Related Art
- Generally, a thin film transistor is used as a switching element for a display device. The thin film transistor may be formed of various materials, such as silicon and organic materials. The organic thin film transistor is formed of an organic semiconductor material. The organic thin film transistor is formed on a flexible substrate instead of a glass substrate. Other than the organic thin film transistor using the organic semiconductor material and the flexible substrate, the organic thin film transistor is similar in structure to the silicon thin film transistor.
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FIG. 1 is a cross-sectional view of illustrating the related art organic thin film transistor. As shown inFIG. 1 , the related art organic thin film transistor includes agate electrode 52 a of a metal material formed on alower substrate 51, agate insulation layer 53 formed on thelower substrate 51, including thegate electrode 52 a, source anddrain electrodes gate electrode 52 a and formed on thegate insulation layer 53, and anorganic semiconductor layer 54 formed on thegate insulation layer 53 including the source anddrain electrodes drain electrodes - The source and drain electrodes can be formed of a transparent conductive layer, such as indium tin oxide (ITO) and indium zinc oxide (IZO). The transparent conductive layer has the advantage of being easy to pattern. However, source and drain electrodes are formed of transparent conductive layers having a high contact resistance with the organic semiconductor layer. More specifically, if the source/drain electrodes are formed of transparent conductive layers, an energy barrier occurs at the interface between the transparent conductive layer and the organic semiconductor layer. Such an energy barrier prevents a charge injection so as to increase resistance between the transparent source/drain electrodes and the organic semiconductor layer. More specifically, the energy barrier interrupts the movement of majority carriers in an accumulation mode. Due to such a resistance increase between the
organic semiconductor layer 54 and the source/drain electrodes 55 a/55 b, the mobility is lowered and current crowding occurs at low voltages, which degrades the operating characteristics of the thin film transistor. - Accordingly, embodiments of the invention are directed to an organic thin film transistor and a method for manufacturing the same, which substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of embodiments of the invention is to provide an organic thin film transistor and a method for manufacturing the same, which can decrease contact resistance between an organic semiconductor layer and transparent source/drain electrodes.
- Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, an organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer.
- In another aspect of the invention, a method for manufacturing an organic thin film transistor includes forming a buffer layer and a transparent conductive layer over a substrate, forming source and drain electrodes by patterning the transparent conductive layer, forming a tunneling barrier layer on the source and drain electrodes, and the buffer layer, sequentially forming an organic semiconductor layer and a gate insulation layer on the tunneling barrier layer, and forming a gate electrode on the gate insulation layer.
- In yet another aspect, an organic thin film transistor includes a source and drain electrodes over a substrate, each of the source and drain electrodes having in an island shape, a tunneling barrier layer on the source and drain electrodes, and extending between the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and on the gate insulation layer.
- It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings:
-
FIG. 1 is a cross-sectional view of illustrating the related art organic thin film transistor; -
FIGS. 2A to 2D are cross-sectional views illustrating a method for manufacturing an organic thin film transistor according to an embodiment of the invention; and -
FIG. 3 is a cross-sectional view of an organic thin film transistor according to an embodiment of the invention. - Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
-
FIGS. 2A to 2D are cross-sectional views illustrating a method for manufacturing an organic thin film transistor according to an embodiment of the invention.FIG. 3 is a cross-sectional view illustrating an organic thin film transistor according to an embodiment of the invention. As shown inFIG. 2D , the organic thin film transistor according to an embodiment of the invention includes abuffer layer 412 formed of an organic material is provided on alower substrate 410, island-shaped source/drain electrodes 414 a/414 b formed of a transparent conductive layer, such as ITO or IZO, are provided on thebuffer layer 412, atunneling barrier layer 416 is formed on thebuffer layer 412 and the source/drain electrodes 414 a/414 b, anorganic semiconductor layer 418 is formed on thetunneling barrier layer 416, agate insulation layer 420 is formed on theorganic semiconductor layer 418, and agate electrode 422 is formed on thegate insulating layer 420 and overlapping the source/drain electrodes 414 a/414 b. Theorganic semiconductor layer 418 can be formed of one of liquid crystalline polyfluorene block copolymer (LCPBC), pentacene, and polythiophene. - The
tunneling barrier layer 416 reduces a voltage drop between theorganic semiconductor layer 418 and the source/drain electrodes 414 a/414 b so that holes can be injected into the source/drain electrodes 414 a/414 b with ease. Thetunneling barrier layer 416 lowers a work function difference between the source/drain electrodes 414 a/414 b and the source/drain electrodes 414 a/414 b to thereby lower an energy barrier that prevents charge injection, such as hole injection. Due to thetunneling barrier layer 416, a contact resistance between theorganic semiconductor layer 418 and the source/drain electrodes 414 a/414 b is lowered. - The contact resistance depends on a thickness of the
tunneling barrier layer 416. If thetunneling barrier layer 416 is formed at a thickness of 10 Å to 110 Å, the contact resistance is decreased between theorganic semiconductor layer 418 and the source/drain electrodes 414 a/414 b. If thetunneling barrier layer 416 has a thickness above 100 Å, the contact resistance is increased between theorganic semiconductor layer 418 and the source/drain electrodes 414 a/414 b. Thetunneling barrier layer 416 may be formed of any one of CBP(4,48-N,N 8-dicarbazole-biphenyl), BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), SiNx, or SiO2. - A method for manufacturing the organic thin film transistor according to an embodiment of the invention will be explained as follows. First, as shown in
FIG. 2A , thebuffer layer 412 is formed on thelower substrate 410, wherein thelower substrate 410 is formed of glass or transparent plastic. Thebuffer layer 412 is deposited to improve the subsequent crystallization of the organic semiconductor layer. Thebuffer layer 412 can be formed of an inorganic insulation material, such as silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a deposition layer of silicon oxide (SiOx) and silicon nitride (SiNx). In the alternative, thebuffer layer 412 may be formed of an organic insulation material, such as benzocyclobutene (BCB), acrylic-based material, polyimide, or polymethylmetacrylate (PMMA). - Then, a transparent
conductive layer 414 is formed on thebuffer layer 412. The transparentconductive layer 414 may be formed of indium tin oxide (ITO) or indium zinc oxide (IZO), which is generally used for fabricating an LCD device. In the alternative, a metal layer of chrome (Cr) or molybdenum (Mo) is formed on thebuffer layer 412 and then the transparentconductive layer 414 can be formed on the metal layer. Thus, each of the source/drain electrodes may be formed of a dual-layered structure of the transparent conductive layer and the metal layer, so that it is possible to decrease a line resistance for the source/drain electrodes of the organic thin film transistor. - As shown in
FIG. 2B , after coating the transparentconductive layer 414 with photoresist (not shown), a photo mask having a predetermined pattern is positioned above the photoresist, and light is irradiated onto the photoresist and then the photoresist is developed, thereby patterning the photoresist. Then, the transparentconductive layer 414 is selectively etched by using the patterned photoresist as a mask, thereby forming the source/drain electrodes 414 a/414 b. If a metal layer was first deposited on thebuffer layer 412, the metal layer is also patterned while the transparentconductive layer 414 is patterned. Then, the photoresist is removed. - As shown in
FIG. 2C , thetunneling barrier layer 416 is formed on thebuffer layer 412 and the source/drain electrodes 414 a/414 b. Thetunneling barrier layer 416 is deposited at a thickness of 10 Å to 110 Å. Thetunneling barrier layer 416 may be formed of one of CBP(4,48-N,N 8-dicarbazole-biphenyl), BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), SiNx, and SiO2. Thetunneling barrier layer 416 is formed on thebarrier layer 412 as well as upper surfaces and sidewalls of the source/drain electrodes 414 a/414 b. Thus, thetunneling barrier layer 416 is formed on the source/drain electrodes 414 a/414 b and extends between the source/drain electrodes 414 a/414 b. - As shown in
FIG. 2D , an organic material is formed on a surface of the lower substrate including thetunneling barrier layer 416, and is then patterned, thereby forming theorganic semiconductor layer 418. Theorganic semiconductor layer 418 may be formed of one of liquid crystalline polyfluorene block copolymer (LCPBC), pentacene and polythiophene. Thereafter, an inorganic insulation material or an organic insulating material is formed on theorganic semiconductor layer 418 to form thegate insulation layer 420. Thegate insulation layer 420 may be formed of the inorganic insulation material of silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of the organic insulation material, such as BCB, acrylic-based material, or polyimide. To obtain desirable adhesive strength between thegate insulation layer 420 and the organic semiconductor layer, thegate insulation layer 420 should be formed of an organic insulation material. - Then, a metal material is deposited on the
gate insulation layer 420. The metal material is then patterned by photolithography, thereby forming thegate electrode 422 overlapping the source/drain electrodes 414 a/414 b. Thegate electrode 422 may be formed of a metal material of chrome (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum neodymium (AlNd), or tungsten (W), or may be formed of an alloy thereof. - If the
gate electrode 422, thegate insulation layer 420, the source/drain electrodes 414 a/414 b and theorganic semiconductor layer 418 are formed of the organic material, they can be manufactured in a low-temperature process. Thelower substrate 410 may be formed of a flexible plastic substrate or film in a low-temperature process. - As shown in
FIG. 3 , an LCD device provided with the organic thin film transistor according to an embodiment of the invention includes apassivation layer 419 and apixel electrode 417. In this case, thepassivation layer 419 is formed over thelower substrate 410 and the organic thin film transistor, wherein the passivation layer is formed of the organic insulation material, such as BCB, acrylic-based material, and polyimide. Also, thepixel electrode 417 is connected with thedrain electrode 414 b through acontact hole 421. Thepixel electrode 417 is formed in a pixel region of thepassivation layer 419, wherein thepixel electrode 417 is formed of ITO or IZO. - In addition, an upper substrate is provided opposite to the
lower substrate 410, and is bonded to thelower substrate 410. The upper substrate includes ablack matrix 430 to prevent light from leaking from portions other than the pixel region, acolor filter layer 428 to represent colors, and acommon electrode 426 to drive the pixel. The lower and upper substrates are bonded to each other with a predetermined gap therebetween, and aliquid crystal layer 431 is formed in the predetermined gap between the lower and upper substrates. - As mentioned above, the organic thin film transistor according to embodiments of the invention and the method for manufacturing the same have at least the following advantages. In the organic thin film transistor according to embodiments of the invention, a tunneling barrier layer is formed between and contacting the organic semiconductor layer and the source/drain electrodes. The tunneling barrier layer lowers the energy barrier which prevents charge injection, such as hole injection. As a result, the contact resistance decreases between the organic semiconductor layer and the source/drain electrodes, thereby improving the mobility properties of the thin film transistor and preventing the current crowding at low voltages.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the an organic thin film transistor and a method for manufacturing the same of embodiments of the invention without departing from the spirit or scope of the invention. Thus, it is intended that embodiments of the invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (7)
Priority Applications (1)
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US12/940,626 US8324017B2 (en) | 2005-12-29 | 2010-11-05 | Organic thin film transistor with tunneling barrier layer and method for manufacturing the same |
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KR1020050134409A KR101212152B1 (en) | 2005-12-29 | 2005-12-29 | Organic Thin Film Transistor and Method for manufacturing the same |
KRP2005-134409 | 2005-12-29 | ||
KR10-2005-134409 | 2005-12-29 | ||
US11/645,733 US7851787B2 (en) | 2005-12-29 | 2006-12-27 | Organic thin film transistor with tunneling barrier layer and method of manufacturing the same |
US12/940,626 US8324017B2 (en) | 2005-12-29 | 2010-11-05 | Organic thin film transistor with tunneling barrier layer and method for manufacturing the same |
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US8324017B2 US8324017B2 (en) | 2012-12-04 |
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TWI659554B (en) * | 2017-05-10 | 2019-05-11 | 元太科技工業股份有限公司 | Organic thin film transistor |
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KR101212152B1 (en) | 2012-12-13 |
US8324017B2 (en) | 2012-12-04 |
KR20070071181A (en) | 2007-07-04 |
CN1992370B (en) | 2012-06-06 |
CN1992370A (en) | 2007-07-04 |
US7851787B2 (en) | 2010-12-14 |
US20070152211A1 (en) | 2007-07-05 |
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