US20100270689A1 - Semiconductor packages and electronic systems including the same - Google Patents
Semiconductor packages and electronic systems including the same Download PDFInfo
- Publication number
- US20100270689A1 US20100270689A1 US12/659,775 US65977510A US2010270689A1 US 20100270689 A1 US20100270689 A1 US 20100270689A1 US 65977510 A US65977510 A US 65977510A US 2010270689 A1 US2010270689 A1 US 2010270689A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor chips
- semiconductor
- redistribution
- pad
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000015654 memory Effects 0.000 claims description 17
- 230000003252 repetitive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06506—Wire or wire-like electrical connections between devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- Example embodiments relate to semiconductor devices and electronic systems including the same, and more particularly, to a semiconductor packages having a plurality of semiconductor chips mounted therein and electronic systems including the same.
- semiconductor products require processing of high-volume data in spite of a decrease in their volume.
- highly integrated semiconductor chips implemented in the semiconductor chips as a single package may be necessary.
- higher integration of the semiconductor chips may be difficult to achieve due to the limitation of integration technologies and may be more expensive.
- a semiconductor package of a multi-chip type in which a plurality of semiconductor chips are implemented in a single package is under consideration.
- a semiconductor package there is provided a semiconductor package.
- a substrate may be provided.
- a plurality of semiconductor chips may be deposited on the substrate, and each of them may include at least one electrode pad.
- At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.
- the at least one of the plurality of semiconductor chips may further include at least one redistribution line configured to connect the at least one electrode pad with the at least one redistribution pad.
- the at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of semiconductor chips may be disposed along different edges on the same surface of the at least one of the plurality of semiconductor chips.
- the plurality of semiconductor chips may further include a upper semiconductor chip on the at least one of the plurality of semiconductor chips, and at least one electrode pad of the upper semiconductor chip may be adjacent to the at least one redistribution pad.
- the plurality of semiconductor chips may be stacked in offset directions from one another.
- the at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of semiconductor chips may be exposed.
- a semiconductor package there is provided a semiconductor package.
- a substrate is provided.
- a plurality of first semiconductor chips may be on a first portion of the substrate and each of them may include at least one electrode pad.
- a second semiconductor chip may be deposited on a second portion of the substrate, which is different from the first portion.
- At least one of the plurality of first semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.
- the at least one of the plurality of first semiconductor chips may include at least one redistribution line configured to connect the at least one electrode pad with the at least one redistribution pad.
- the at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of first semiconductor chips may be disposed along different edges on the same surface of the at least one of the plurality of first semiconductor chips.
- the plurality of first semiconductor chips may further include an upper semiconductor chip stacked directly on the at least one of the plurality of first semiconductor chips, and at least one electrode pad of the upper semiconductor chip adjacent to the at least one redistribution pad.
- the plurality of first semiconductor chips may be stacked in offset directions from one another.
- the at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of first semiconductor chips are exposed.
- the at least one redistribution pad of the at least one of the plurality of first semiconductor chips may be exposed, and the at least one electrode pad of the at least one of the plurality of first semiconductor chips may be covered with other semiconductor chips.
- the semiconductor package may further include a plurality of bonding wires configured to connect the plurality of semiconductor chips, wherein at least one of the plurality of bonding wires may be connected with the at least one of the plurality of first semiconductor chips through the at least one redistribution pad.
- An input/output unit may be provided to communicate data with an external device.
- a memory unit may be provided to store the data.
- a processor unit may be provided to execute the data.
- the memory unit may include any one of the above-described semiconductor packages.
- the processor unit, the input/output unit, and the memory unit may communicate data therebetween via a bus.
- FIGS. 1-5 are perspective views illustrating semiconductor packages according to example embodiments
- FIGS. 6-7 are cross-sectional views illustrating semiconductor packages according to example embodiments.
- FIG. 8 is a block diagram illustrating an electronic system according to example embodiments.
- inventive concept will be described in detail by describing example embodiments with reference to the accompanying drawings.
- inventive concept is not limited by example embodiments to be disclosed below and may be implemented in various forms.
- Example embodiments are only provided to make the disclosure of the inventive concept complete and make those of ordinary skill in the art fully know the scope of the inventive concept.
- the sizes of elements may be exaggerated for convenience of illustration.
- FIG. 1 is perspective view illustrating a semiconductor package according to example embodiments.
- a substrate 110 may be provided.
- the substrate 110 may include various types of substrates, e.g., a printed circuit board (PCB), a flexible substrate, and/or a tape substrate.
- the substrate 110 may include bonding fingers 104 on a top surface thereof.
- the bonding fingers 104 may be connected to a bottom surface of the substrate 110 through an internal circuit of the substrate 110 .
- the substrate 110 may further include bonding pads ( 102 of FIG. 6 ) and external terminals ( 115 of FIG. 6 ) on the bottom surface thereof.
- the external terminals ( 115 of FIG. 6 ) may be disposed on the bonding pads ( 102 of FIG. 6 ) and the bonding fingers 104 may be electrically connected to the bonding pads ( 102 of FIG. 6 ).
- the number and arrangement of the bonding fingers 104 are illustrated and may be properly selected according to the type and usage of the semiconductor package.
- a first semiconductor chip 120 may be stacked on the substrate 110 .
- the first semiconductor chip 120 may be attached on the substrate 110 by using an adhesive member (not shown).
- the first semiconductor chip 120 may be a memory chip or a logic chip.
- the memory chip may include various types of memories, e.g., a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, a programmable random access memory (PRAM), a resistive random access memory (ReRAM), ferroelectric random access memory (FeRAM), or a magnetoresistive random access memory (MRAM).
- DRAM dynamic random access memory
- SRAM static random access memory
- PRAM programmable random access memory
- ReRAM resistive random access memory
- FeRAM ferroelectric random access memory
- MRAM magnetoresistive random access memory
- the first semiconductor chip 120 may include first electrode pads 122 and first redistribution pads 124 on a top surface thereof.
- the first electrode pads 122 may be connected to the internal circuit of the first semiconductor chip 120 .
- the first redistribution pads 124 may be connected with the first electrode pads 122 by using first redistribution lines 126 and may serve to move the positions of the first electrode pads 122 .
- the first electrode pads 122 and the first redistribution pads 124 may be disposed along different edges on the same surface of the first semiconductor chip 120 .
- the number of first electrode pads 122 and the number of first redistribution pads 124 are illustrated and may be properly selected according to the type of the first semiconductor chip 120 .
- the first semiconductor chip 120 may be stacked in an offset direction from an edge of the substrate 110 such that the bonding fingers 104 are exposed.
- the first semiconductor chip 120 may be disposed on the substrate 110 such that the first redistribution pads 124 are disposed on the same surface as the bonding fingers 104 .
- the first redistribution pads 124 may be disposed adjacent to the bonding fingers 104 .
- the first redistribution pads 124 may be adjacent to and in the same direction as the bonding fingers 104 through the first redistribution lines 126 without a need to rotate the first semiconductor chip 120 .
- First bonding wires 210 may connect the bonding fingers 104 with the first redistribution pads 124 , whereby the substrate 110 and the first semiconductor chip 120 may be electrically connected with each other. Because the bonding fingers 104 and the first redistribution pads 124 are offset adjacent to and in the same direction as each other, connections of the first bonding wires 210 may be simplified. Thus, the probability of a problem, e.g., loop failure or short-circuit of the first bonding wires 210 , occurring may be lowered.
- FIG. 2 is a perspective view illustrating a semiconductor package according to example embodiments.
- the semiconductor package according to example embodiments illustrated in FIG. 2 uses the semiconductor package illustrated in FIG. 1 , and thus a repetitive description thereof will be omitted.
- a second semiconductor chip 130 may be further stacked on the first semiconductor chip 120 .
- the second semiconductor chip 130 may include second electrode pads 132 and second redistribution pads 134 .
- the second electrode pads 132 may be connected to an internal circuit of the second semiconductor chip 130 .
- the second redistribution pads 134 may be connected with the second electrode pads 132 by using second redistribution lines 136 , and may serve to move the positions of the second electrode pads 132 .
- the second electrode pads 132 and the second redistribution pads 134 may be disposed along different edges on the same surface of the second semiconductor chip 130 .
- the number of second electrode pads 132 and the number of second redistribution pads 134 are illustrated and may be properly selected according to the type of the second semiconductor chip 130 .
- the second redistribution pads 134 of the second semiconductor chip 130 may be disposed adjacent to the first electrode pads 122 of the first semiconductor chip 120 .
- the second redistribution pads 134 may be disposed in the same direction as the first electrode pads 122 .
- the second bonding wires 220 may connect the second redistribution pads 134 with the first electrode pads 122 , whereby the first and second semiconductor chips 120 and 130 may be electrically connected with each other. Because the first semiconductor chip 120 is electrically connected with the substrate 110 , the first and second semiconductor chips 120 and 130 may be electrically connected with the substrate 110 .
- the first semiconductor chip 120 may be offset in a direction inward from an edge of the substrate 110 where the bonding fingers 104 are disposed such that the bonding fingers 104 of the substrate 110 are exposed, and the second semiconductor chip 130 may be offset in a direction inward from an edge of the first semiconductor chip 120 such that the first redistribution pads 124 of the first semiconductor chip 120 are exposed.
- the second semiconductor chip 130 may be offset in a direction inward from the edge of the first semiconductor chip 120 where the first redistribution pads 124 are disposed, such that the first redistribution pads 124 of the first semiconductor chip 120 may be exposed.
- the second semiconductor chip 130 may be offset in two orthogonal axial directions from the edges of the first semiconductor chip 120 .
- the first and second semiconductor chips 120 and 130 may be connected by the second bonding wires 220 in offset directions from one another and the first and second redistribution pads 124 and 134 without complicatedly rotating the first and second semiconductor chips 120 and 130 , and the first semiconductor chip 120 and the substrate 110 may be connected with each other through the first bonding wires 210 .
- the lengths of the connections of the first and second bonding wires 210 and 220 may be reduced and the arrangements of the connections of the first and second bonding wires 210 and 220 may be simplified.
- the height of loops of the first and second bonding wires 210 and 220 can be easily controlled and the occurrence of a crack in the first and second semiconductor chips 120 and 130 due to overhang of the first and second bonding wires 210 and 220 may be prevented or reduced.
- the number of first and second semiconductor chips 120 and 130 may be illustrated. Therefore, one semiconductor chip or a plurality of semiconductor chips (not shown) may be further stacked on the second semiconductor chip 130 .
- FIG. 3 is a perspective view illustrating a semiconductor package according to example embodiments.
- the semiconductor package according to example embodiments as illustrated in FIG. 3 is a modification of the semiconductor package illustrated in FIG. 2 in which some components are changed, and thus a repetitive description thereof will be omitted.
- a third semiconductor chip 130 a may include third electrode pads 132 a adjacent to the first electrode pads 122 of the first semiconductor chip 120 .
- the first and third semiconductor chips 120 and 130 a may be electrically connected with each other by connecting the first and third electrode pads 122 and 132 a with third bonding wires 220 a .
- the third semiconductor chip 130 a may not include any redistribution pad.
- One or more second semiconductor chips 130 illustrated in FIG. 2 may be stacked on the third semiconductor chip 130 a.
- FIG. 4 is a perspective view illustrating a semiconductor package according to example embodiments.
- fourth and fifth semiconductor chips 140 and 150 may be stacked on one another on the substrate 110 .
- the substrate 110 may be the same as the substrate 110 of FIG. 1 .
- the fourth semiconductor chip 140 may include fourth electrode pads 142 .
- the fourth electrode pads 142 may be adjacent to the bonding fingers 104 of the substrate 110 .
- the fifth semiconductor chip 150 may include fifth electrode pads 152 and third redistribution pads 154 .
- the third redistribution pads 154 may be adjacent to the fourth electrode pads 142 of the fourth semiconductor chip 140 and may be connected to the fifth electrode pads 152 by using third redistribution lines 156 .
- the bonding fingers 104 of the substrate 110 , the fourth electrode pads 142 of the fourth semiconductor chip 140 , and the third redistribution pads 154 of the fifth semiconductor chip 150 may be adjacent to and in the same direction as one another.
- the fourth and fifth semiconductor chips 140 and 150 may be offset in one direction sequentially from the edge of the substrate 110 where the bonding fingers 104 are disposed.
- Fourth bonding wires 230 may connect the bonding fingers 104 with the fourth electrode pads 142
- fifth bonding wires 240 may connect the fourth electrode pads 142 with the third redistribution pads 154 , whereby the fourth and fifth semiconductor chips 140 and 150 may be electrically connected with the substrate 110 .
- the fourth semiconductor chip 140 may be the same structure as the fifth semiconductor chip 150 .
- the positions of the fourth electrode pads 142 may be moved to positions that are similar to those of the fifth electrode pads 152 , and thus, the fourth electrode pads 142 may not be exposed because of being covered with the fifth semiconductor chip 150 .
- FIG. 5 is a perspective view illustrating a semiconductor package according to example embodiments.
- the semiconductor package according to example embodiments illustrated in FIG. 5 uses the semiconductor package illustrated in FIG. 4 , and thus a repetitive description thereof will be omitted.
- a sixth semiconductor chip 160 may be further stacked on the fifth semiconductor chip 150 .
- the sixth semiconductor chip 160 may include sixth electrode pads 162 and fourth redistribution pads 164 .
- the fourth redistribution pads 164 may be disposed adjacent to the third redistribution pads 154 of the fifth semiconductor chip 150 and may be connected with sixth electrode pads 162 through the fourth redistribution lines 166 .
- the sixth semiconductor chip 160 may be offset in a direction inward from an edge of the fifth semiconductor chip 150 where the third redistribution pads 154 are disposed, such that the third redistribution pads 154 are exposed. Consequently, the fifth electrode pads 152 of the fifth semiconductor chip 150 may not be exposed because of being covered with the sixth semiconductor chip 160 .
- one or more semiconductor chips may be further stacked on the sixth semiconductor chip 160 .
- Sixth bonding wires 250 may connect the fifth electrode pads 152 with the fourth redistribution pads 164 .
- FIG. 6 is a cross-sectional view illustrating a semiconductor package according to example embodiments.
- a plurality of semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may be stacked on the substrate 110 .
- the substrate 110 may refer to the description made with reference to FIG. 1 .
- the semiconductor chips 310 , 320 , 330 , and 340 may be stacked in offset directions from one another.
- At least one bonding wire 315 may connect the semiconductor chip 130 with the substrate 110 , at least one bonding wire 325 may connect the semiconductor chips 310 and 320 with each other, at least one bonding wire 335 may connect the semiconductor chips 320 and 330 with each other, and at least one bonding wire 345 may connect the semiconductor chips 330 and 340 with each other.
- a deposition structure of the semiconductor chips 310 , 320 , 330 , and 340 may be similar to that of the semiconductor package illustrated in FIG. 5 .
- the semiconductor chips 350 , 360 , 370 , and 380 may be stacked offset at least in a direction opposite to the semiconductor chips 310 , 320 , 330 , and 340 .
- At least one bonding wire 365 may connect the semiconductor chips 350 and 360 with each other, at least one bonding wire 375 may connect the semiconductor chips 360 and 370 with each other, and at least one bonding wire 385 may connect the semiconductor chips 370 and 380 with each other.
- the bonding wires 365 , 375 , and 385 may be disposed in an opposite side to the boding wires 315 , 325 , 335 , and 345 with respect to the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 .
- the semiconductor chip 340 may include at least one redistribution line 346
- the semiconductor chip 350 may include at least one redistribution line 356 .
- the redistribution lines 346 and 356 may be connected with each other through at least one bonding wire 355 .
- the redistribution line 346 may be stretched to connect the bonding wires 345 and 355 with each other. Consequently, the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may be electrically connected with the substrate 110 .
- the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may communicate a signal with an external device through external terminals 115 disposed on a rear surface of the substrate 110 .
- the external terminals 115 may be solder bumps or solder balls and may be attached on the bonding pads 102 disposed on the rear surface of the substrate 110 .
- connections of the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may be simplified by stacking in offset directions from one another and the redistribution lines 346 and 356 .
- the lengths of the connections of the bonding wires 315 , 325 , 335 , 345 , 355 , 365 , 375 , and 385 may be reduced and arrangements of the connections may be simplified.
- FIG. 7 is a cross-sectional view illustrating a semiconductor package according to example embodiments.
- the semiconductor package according to example embodiments illustrated in FIG. 7 may use the semiconductor package illustrated in FIG. 6 , and thus a repetitive description thereof will be omitted.
- a plurality of semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may be stacked on a first portion of the substrate 110 and a second semiconductor chip 410 may be stacked on a second portion of the substrate 110 which is different from the first portion.
- the second semiconductor chip 410 may be connected with the substrate 110 through a bonding wire 415 .
- the substrate 110 may include a circuit pattern (not shown) for electrically connecting the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 with the second semiconductor chip 410 .
- the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 may be memory devices, and the second semiconductor chip 410 may be a logic chip for controlling the memory devices.
- the memory chip may include various types of memories, e.g., a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, a phase change random access memory (PRAM), a resistive random access memory (ReRAM), ferroelectric random access memory (FeRAM), or a magnetoresistive random access memory (MRAM).
- DRAM dynamic random access memory
- SRAM static random access memory
- PRAM phase change random access memory
- ReRAM resistive random access memory
- FeRAM ferroelectric random access memory
- MRAM magnetoresistive random access memory
- the second semiconductor chip 410 may be a controller for controlling the semiconductor chips 310 , 320 , 330 , 340 , 350 , 360 , 370 , and 380 . Because the embedded memory card, unlike an external memory card, does not require a slot, the embedded memory card may be used in small-size mobile devices. The embedded memory card also has flexibility in terms of product design, thus being a customer-friendly solution.
- FIG. 8 is a block diagram illustrating an electronic system 500 according to example embodiments.
- the electronic system 500 may include a processor unit 510 , an input/output unit 530 , and a memory unit 520 , and they can communicate data therebetween by using a bus 540 .
- the processor unit 510 may serve to execute a program and control the electronic system 500 .
- the input/output unit 530 may be used to input and output data to and from the electronic system 500 .
- the electronic system 500 may be connected to an external device, e.g., a personal computer or a network, and communicate data with the external device.
- the memory unit 520 may store codes and data for operations of the processor unit 510 .
- the memory unit 520 may include at least one of the semiconductor packages illustrated in FIGS. 1 through 7 .
- the electronic system 500 may constitute various electronic control devices which require the memory unit 520 , and may be used for mobile phones, MP3 players, navigations, solid state disks (SSDs), or household appliances.
- SSDs solid state disks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
- This application claims priority under 35 USC §119 to Korean Patent Application No. 10-2009-0036731, filed on Apr. 27, 2009, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.
- 1. Field
- Example embodiments relate to semiconductor devices and electronic systems including the same, and more particularly, to a semiconductor packages having a plurality of semiconductor chips mounted therein and electronic systems including the same.
- 2. Description of the Related Art
- Semiconductor products require processing of high-volume data in spite of a decrease in their volume. As a result, highly integrated semiconductor chips implemented in the semiconductor chips as a single package may be necessary. However, higher integration of the semiconductor chips may be difficult to achieve due to the limitation of integration technologies and may be more expensive. In this context, a semiconductor package of a multi-chip type in which a plurality of semiconductor chips are implemented in a single package is under consideration.
- According to example embodiments, there is provided a semiconductor package. A substrate may be provided. A plurality of semiconductor chips may be deposited on the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.
- In example embodiments of the semiconductor package, the at least one of the plurality of semiconductor chips may further include at least one redistribution line configured to connect the at least one electrode pad with the at least one redistribution pad.
- In example embodiments of the semiconductor package, the at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of semiconductor chips may be disposed along different edges on the same surface of the at least one of the plurality of semiconductor chips.
- In example embodiments of the semiconductor package, the plurality of semiconductor chips may further include a upper semiconductor chip on the at least one of the plurality of semiconductor chips, and at least one electrode pad of the upper semiconductor chip may be adjacent to the at least one redistribution pad.
- In example embodiments of the semiconductor package, the plurality of semiconductor chips may be stacked in offset directions from one another. The at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of semiconductor chips may be exposed.
- According to example embodiments, there is provided a semiconductor package. A substrate is provided. A plurality of first semiconductor chips may be on a first portion of the substrate and each of them may include at least one electrode pad. A second semiconductor chip may be deposited on a second portion of the substrate, which is different from the first portion. At least one of the plurality of first semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.
- In example embodiments, the at least one of the plurality of first semiconductor chips may include at least one redistribution line configured to connect the at least one electrode pad with the at least one redistribution pad. The at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of first semiconductor chips may be disposed along different edges on the same surface of the at least one of the plurality of first semiconductor chips.
- In example embodiments, the plurality of first semiconductor chips may further include an upper semiconductor chip stacked directly on the at least one of the plurality of first semiconductor chips, and at least one electrode pad of the upper semiconductor chip adjacent to the at least one redistribution pad. The plurality of first semiconductor chips may be stacked in offset directions from one another. The at least one redistribution pad and the at least one electrode pad of the at least one of the plurality of first semiconductor chips are exposed. The at least one redistribution pad of the at least one of the plurality of first semiconductor chips may be exposed, and the at least one electrode pad of the at least one of the plurality of first semiconductor chips may be covered with other semiconductor chips.
- In example embodiments, the semiconductor package may further include a plurality of bonding wires configured to connect the plurality of semiconductor chips, wherein at least one of the plurality of bonding wires may be connected with the at least one of the plurality of first semiconductor chips through the at least one redistribution pad.
- According to example embodiments, there is provided an electronic system. An input/output unit may be provided to communicate data with an external device. A memory unit may be provided to store the data. A processor unit may be provided to execute the data. The memory unit may include any one of the above-described semiconductor packages. The processor unit, the input/output unit, and the memory unit may communicate data therebetween via a bus.
- Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
-
FIGS. 1-5 are perspective views illustrating semiconductor packages according to example embodiments; -
FIGS. 6-7 are cross-sectional views illustrating semiconductor packages according to example embodiments; and -
FIG. 8 is a block diagram illustrating an electronic system according to example embodiments. - Hereinafter, the inventive concept will be described in detail by describing example embodiments with reference to the accompanying drawings. However, the inventive concept is not limited by example embodiments to be disclosed below and may be implemented in various forms. Example embodiments are only provided to make the disclosure of the inventive concept complete and make those of ordinary skill in the art fully know the scope of the inventive concept. In the drawings, the sizes of elements may be exaggerated for convenience of illustration.
- It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of example embodiments. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).
- The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
-
FIG. 1 is perspective view illustrating a semiconductor package according to example embodiments. Referring toFIG. 1 , asubstrate 110 may be provided. For example, thesubstrate 110 may include various types of substrates, e.g., a printed circuit board (PCB), a flexible substrate, and/or a tape substrate. Thesubstrate 110 may include bondingfingers 104 on a top surface thereof. Thebonding fingers 104 may be connected to a bottom surface of thesubstrate 110 through an internal circuit of thesubstrate 110. For example, thesubstrate 110 may further include bonding pads (102 ofFIG. 6 ) and external terminals (115 ofFIG. 6 ) on the bottom surface thereof. The external terminals (115 ofFIG. 6 ) may be disposed on the bonding pads (102 ofFIG. 6 ) and thebonding fingers 104 may be electrically connected to the bonding pads (102 ofFIG. 6 ). The number and arrangement of thebonding fingers 104 are illustrated and may be properly selected according to the type and usage of the semiconductor package. - A
first semiconductor chip 120 may be stacked on thesubstrate 110. For example, thefirst semiconductor chip 120 may be attached on thesubstrate 110 by using an adhesive member (not shown). Thefirst semiconductor chip 120 may be a memory chip or a logic chip. The memory chip may include various types of memories, e.g., a dynamic random access memory (DRAM), a static random access memory (SRAM), a flash memory, a programmable random access memory (PRAM), a resistive random access memory (ReRAM), ferroelectric random access memory (FeRAM), or a magnetoresistive random access memory (MRAM). - The
first semiconductor chip 120 may includefirst electrode pads 122 andfirst redistribution pads 124 on a top surface thereof. Thefirst electrode pads 122 may be connected to the internal circuit of thefirst semiconductor chip 120. Thefirst redistribution pads 124 may be connected with thefirst electrode pads 122 by usingfirst redistribution lines 126 and may serve to move the positions of thefirst electrode pads 122. For example, thefirst electrode pads 122 and thefirst redistribution pads 124 may be disposed along different edges on the same surface of thefirst semiconductor chip 120. The number offirst electrode pads 122 and the number offirst redistribution pads 124 are illustrated and may be properly selected according to the type of thefirst semiconductor chip 120. - The
first semiconductor chip 120 may be stacked in an offset direction from an edge of thesubstrate 110 such that thebonding fingers 104 are exposed. Thefirst semiconductor chip 120 may be disposed on thesubstrate 110 such that thefirst redistribution pads 124 are disposed on the same surface as thebonding fingers 104. For example, thefirst redistribution pads 124 may be disposed adjacent to thebonding fingers 104. Thus, even when thebonding fingers 104 and thefirst electrode pads 122 are not adjacent to each other, thefirst redistribution pads 124 may be adjacent to and in the same direction as thebonding fingers 104 through thefirst redistribution lines 126 without a need to rotate thefirst semiconductor chip 120. -
First bonding wires 210 may connect thebonding fingers 104 with thefirst redistribution pads 124, whereby thesubstrate 110 and thefirst semiconductor chip 120 may be electrically connected with each other. Because thebonding fingers 104 and thefirst redistribution pads 124 are offset adjacent to and in the same direction as each other, connections of thefirst bonding wires 210 may be simplified. Thus, the probability of a problem, e.g., loop failure or short-circuit of thefirst bonding wires 210, occurring may be lowered. -
FIG. 2 is a perspective view illustrating a semiconductor package according to example embodiments. The semiconductor package according to example embodiments illustrated inFIG. 2 uses the semiconductor package illustrated inFIG. 1 , and thus a repetitive description thereof will be omitted. - Referring to
FIG. 2 , asecond semiconductor chip 130 may be further stacked on thefirst semiconductor chip 120. Thesecond semiconductor chip 130 may includesecond electrode pads 132 andsecond redistribution pads 134. Thesecond electrode pads 132 may be connected to an internal circuit of thesecond semiconductor chip 130. Thesecond redistribution pads 134 may be connected with thesecond electrode pads 132 by usingsecond redistribution lines 136, and may serve to move the positions of thesecond electrode pads 132. For example, thesecond electrode pads 132 and thesecond redistribution pads 134 may be disposed along different edges on the same surface of thesecond semiconductor chip 130. The number ofsecond electrode pads 132 and the number ofsecond redistribution pads 134 are illustrated and may be properly selected according to the type of thesecond semiconductor chip 130. - The
second redistribution pads 134 of thesecond semiconductor chip 130 may be disposed adjacent to thefirst electrode pads 122 of thefirst semiconductor chip 120. For example, thesecond redistribution pads 134 may be disposed in the same direction as thefirst electrode pads 122. Thesecond bonding wires 220 may connect thesecond redistribution pads 134 with thefirst electrode pads 122, whereby the first andsecond semiconductor chips first semiconductor chip 120 is electrically connected with thesubstrate 110, the first andsecond semiconductor chips substrate 110. - For connections of the
first bonding wires 210, thefirst semiconductor chip 120 may be offset in a direction inward from an edge of thesubstrate 110 where thebonding fingers 104 are disposed such that thebonding fingers 104 of thesubstrate 110 are exposed, and thesecond semiconductor chip 130 may be offset in a direction inward from an edge of thefirst semiconductor chip 120 such that thefirst redistribution pads 124 of thefirst semiconductor chip 120 are exposed. For the connections of thefirst bonding wires 210, thesecond semiconductor chip 130 may be offset in a direction inward from the edge of thefirst semiconductor chip 120 where thefirst redistribution pads 124 are disposed, such that thefirst redistribution pads 124 of thefirst semiconductor chip 120 may be exposed. For example, thesecond semiconductor chip 130 may be offset in two orthogonal axial directions from the edges of thefirst semiconductor chip 120. - According to example embodiments, the first and
second semiconductor chips second bonding wires 220 in offset directions from one another and the first andsecond redistribution pads second semiconductor chips first semiconductor chip 120 and thesubstrate 110 may be connected with each other through thefirst bonding wires 210. As a result, the lengths of the connections of the first andsecond bonding wires second bonding wires second bonding wires second semiconductor chips second bonding wires - In example embodiments, the number of first and
second semiconductor chips second semiconductor chip 130. -
FIG. 3 is a perspective view illustrating a semiconductor package according to example embodiments. The semiconductor package according to example embodiments as illustrated inFIG. 3 is a modification of the semiconductor package illustrated inFIG. 2 in which some components are changed, and thus a repetitive description thereof will be omitted. - Referring to
FIG. 3 , athird semiconductor chip 130 a may includethird electrode pads 132 a adjacent to thefirst electrode pads 122 of thefirst semiconductor chip 120. Thus, the first andthird semiconductor chips third electrode pads third bonding wires 220 a. In example embodiments, thethird semiconductor chip 130 a may not include any redistribution pad. One or moresecond semiconductor chips 130 illustrated inFIG. 2 may be stacked on thethird semiconductor chip 130 a. -
FIG. 4 is a perspective view illustrating a semiconductor package according to example embodiments. Referring toFIG. 4 , fourth andfifth semiconductor chips substrate 110. Thesubstrate 110 may be the same as thesubstrate 110 ofFIG. 1 . Thefourth semiconductor chip 140 may includefourth electrode pads 142. Thefourth electrode pads 142 may be adjacent to thebonding fingers 104 of thesubstrate 110. Thefifth semiconductor chip 150 may includefifth electrode pads 152 andthird redistribution pads 154. Thethird redistribution pads 154 may be adjacent to thefourth electrode pads 142 of thefourth semiconductor chip 140 and may be connected to thefifth electrode pads 152 by using third redistribution lines 156. - In example embodiments, the
bonding fingers 104 of thesubstrate 110, thefourth electrode pads 142 of thefourth semiconductor chip 140, and thethird redistribution pads 154 of thefifth semiconductor chip 150 may be adjacent to and in the same direction as one another. Thus, the fourth andfifth semiconductor chips substrate 110 where thebonding fingers 104 are disposed.Fourth bonding wires 230 may connect thebonding fingers 104 with thefourth electrode pads 142, andfifth bonding wires 240 may connect thefourth electrode pads 142 with thethird redistribution pads 154, whereby the fourth andfifth semiconductor chips substrate 110. - In example embodiments, the
fourth semiconductor chip 140 may be the same structure as thefifth semiconductor chip 150. In example embodiments, the positions of thefourth electrode pads 142 may be moved to positions that are similar to those of thefifth electrode pads 152, and thus, thefourth electrode pads 142 may not be exposed because of being covered with thefifth semiconductor chip 150. -
FIG. 5 is a perspective view illustrating a semiconductor package according to example embodiments. The semiconductor package according to example embodiments illustrated inFIG. 5 uses the semiconductor package illustrated inFIG. 4 , and thus a repetitive description thereof will be omitted. - Referring to
FIG. 5 , asixth semiconductor chip 160 may be further stacked on thefifth semiconductor chip 150. Thesixth semiconductor chip 160 may includesixth electrode pads 162 andfourth redistribution pads 164. Thefourth redistribution pads 164 may be disposed adjacent to thethird redistribution pads 154 of thefifth semiconductor chip 150 and may be connected withsixth electrode pads 162 through the fourth redistribution lines 166. - The
sixth semiconductor chip 160 may be offset in a direction inward from an edge of thefifth semiconductor chip 150 where thethird redistribution pads 154 are disposed, such that thethird redistribution pads 154 are exposed. Consequently, thefifth electrode pads 152 of thefifth semiconductor chip 150 may not be exposed because of being covered with thesixth semiconductor chip 160. In example embodiments, one or more semiconductor chips may be further stacked on thesixth semiconductor chip 160.Sixth bonding wires 250 may connect thefifth electrode pads 152 with thefourth redistribution pads 164. -
FIG. 6 is a cross-sectional view illustrating a semiconductor package according to example embodiments. Referring toFIG. 6 , a plurality ofsemiconductor chips substrate 110. Thesubstrate 110 may refer to the description made with reference toFIG. 1 . The semiconductor chips 310, 320, 330, and 340 may be stacked in offset directions from one another. At least onebonding wire 315 may connect thesemiconductor chip 130 with thesubstrate 110, at least onebonding wire 325 may connect thesemiconductor chips bonding wire 335 may connect thesemiconductor chips bonding wire 345 may connect thesemiconductor chips semiconductor chips FIG. 5 . - The semiconductor chips 350, 360, 370, and 380 may be stacked offset at least in a direction opposite to the
semiconductor chips bonding wire 365 may connect thesemiconductor chips bonding wire 375 may connect thesemiconductor chips bonding wire 385 may connect thesemiconductor chips bonding wires wires semiconductor chips - The
semiconductor chip 340 may include at least oneredistribution line 346, and thesemiconductor chip 350 may include at least oneredistribution line 356. The redistribution lines 346 and 356 may be connected with each other through at least onebonding wire 355. Theredistribution line 346 may be stretched to connect thebonding wires semiconductor chips substrate 110. - The semiconductor chips 310, 320, 330, 340, 350, 360, 370, and 380 may communicate a signal with an external device through
external terminals 115 disposed on a rear surface of thesubstrate 110. For example, theexternal terminals 115 may be solder bumps or solder balls and may be attached on thebonding pads 102 disposed on the rear surface of thesubstrate 110. - According to example embodiments, connections of the
semiconductor chips redistribution lines bonding wires -
FIG. 7 is a cross-sectional view illustrating a semiconductor package according to example embodiments. The semiconductor package according to example embodiments illustrated inFIG. 7 may use the semiconductor package illustrated inFIG. 6 , and thus a repetitive description thereof will be omitted. Referring toFIG. 7 , a plurality ofsemiconductor chips substrate 110 and a second semiconductor chip 410 may be stacked on a second portion of thesubstrate 110 which is different from the first portion. The second semiconductor chip 410 may be connected with thesubstrate 110 through abonding wire 415. Thesubstrate 110 may include a circuit pattern (not shown) for electrically connecting thesemiconductor chips - For example, the
semiconductor chips semiconductor chips -
FIG. 8 is a block diagram illustrating anelectronic system 500 according to example embodiments. Referring toFIG. 8 , theelectronic system 500 may include aprocessor unit 510, an input/output unit 530, and amemory unit 520, and they can communicate data therebetween by using abus 540. Theprocessor unit 510 may serve to execute a program and control theelectronic system 500. The input/output unit 530 may be used to input and output data to and from theelectronic system 500. By using the input/output unit 530, theelectronic system 500 may be connected to an external device, e.g., a personal computer or a network, and communicate data with the external device. Thememory unit 520 may store codes and data for operations of theprocessor unit 510. For example, thememory unit 520 may include at least one of the semiconductor packages illustrated inFIGS. 1 through 7 . - For example, the
electronic system 500 may constitute various electronic control devices which require thememory unit 520, and may be used for mobile phones, MP3 players, navigations, solid state disks (SSDs), or household appliances. - The foregoing description of example embodiments has been provided for the purposes of illustration and description. Accordingly, the inventive concept is not limited to example embodiments and it will be obvious that various modifications and variations, such as implementation of combinations of example embodiments, can be made by those of ordinary skill in the art.
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/630,619 US8643193B2 (en) | 2009-04-27 | 2012-09-28 | Semiconductor packages and electronic systems including the same |
US14/170,972 US8901749B2 (en) | 2009-04-27 | 2014-02-03 | Semiconductor packages and electronic systems including the same |
US14/491,302 US9184156B2 (en) | 2009-04-27 | 2014-09-19 | Semiconductor packages and electronic systems including the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0036731 | 2009-04-27 | ||
KR1020090036731A KR20100117977A (en) | 2009-04-27 | 2009-04-27 | Semiconductor package |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/630,619 Continuation US8643193B2 (en) | 2009-04-27 | 2012-09-28 | Semiconductor packages and electronic systems including the same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20100270689A1 true US20100270689A1 (en) | 2010-10-28 |
US8299627B2 US8299627B2 (en) | 2012-10-30 |
Family
ID=42991390
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/659,775 Active 2030-07-05 US8299627B2 (en) | 2009-04-27 | 2010-03-22 | Semiconductor packages and electronic systems including the same |
US13/630,619 Active US8643193B2 (en) | 2009-04-27 | 2012-09-28 | Semiconductor packages and electronic systems including the same |
US14/170,972 Active US8901749B2 (en) | 2009-04-27 | 2014-02-03 | Semiconductor packages and electronic systems including the same |
US14/491,302 Active US9184156B2 (en) | 2009-04-27 | 2014-09-19 | Semiconductor packages and electronic systems including the same |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/630,619 Active US8643193B2 (en) | 2009-04-27 | 2012-09-28 | Semiconductor packages and electronic systems including the same |
US14/170,972 Active US8901749B2 (en) | 2009-04-27 | 2014-02-03 | Semiconductor packages and electronic systems including the same |
US14/491,302 Active US9184156B2 (en) | 2009-04-27 | 2014-09-19 | Semiconductor packages and electronic systems including the same |
Country Status (2)
Country | Link |
---|---|
US (4) | US8299627B2 (en) |
KR (1) | KR20100117977A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100258929A1 (en) * | 2009-04-10 | 2010-10-14 | Kim Seung Jee | Staircase shaped stacked semiconductor package |
US20130069249A1 (en) * | 2008-02-08 | 2013-03-21 | Renesas Electronics Corporation | Semiconductor device |
US8492889B2 (en) * | 2009-09-17 | 2013-07-23 | SK Hynix Inc. | Semiconductor package |
US20150021787A1 (en) * | 2013-07-17 | 2015-01-22 | Samsung Electronics Co., Ltd. | Semiconductor package |
US20150061160A1 (en) * | 2013-08-28 | 2015-03-05 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the semiconductor device |
US9202796B2 (en) | 2013-01-31 | 2015-12-01 | Samsung Electronics Co., Ltd. | Semiconductor package including stacked chips and a redistribution layer (RDL) structure |
US9496216B2 (en) | 2011-12-22 | 2016-11-15 | Samsung Electronics Co., Ltd. | Semiconductor package including stacked semiconductor chips and a redistribution layer |
US20170040289A1 (en) * | 2015-08-03 | 2017-02-09 | Samsung Electronics Co., Ltd. | Semiconductor package |
CN111725186A (en) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | Semiconductor device with a plurality of semiconductor chips |
US11450583B2 (en) * | 2018-09-28 | 2022-09-20 | Samsung Electronics Co., Ltd. | Semiconductor packages |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110099556A (en) * | 2010-03-02 | 2011-09-08 | 삼성전자주식회사 | Apparatus for testing semiconductor package |
WO2013071399A1 (en) * | 2011-11-14 | 2013-05-23 | Mosaid Technologies Incorporated | Package having stacked memory dies with serially connected buffer dies |
TWI583195B (en) * | 2012-07-06 | 2017-05-11 | 新力股份有限公司 | A solid-state imaging device and a solid-state imaging device, and an electronic device |
CN103633076B (en) * | 2013-11-21 | 2017-02-08 | 三星半导体(中国)研究开发有限公司 | Chip type package on encapsulating piece |
WO2015087705A1 (en) * | 2013-12-10 | 2015-06-18 | ソニー株式会社 | Semiconductor device, solid-state imaging element, imaging device, electronic device, and production method therefor |
KR102026979B1 (en) * | 2014-04-18 | 2019-09-30 | 에스케이하이닉스 주식회사 | Semiconductor stacked package |
US10510715B2 (en) * | 2015-12-14 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US10672745B2 (en) * | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D processor |
US10580757B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Face-to-face mounted IC dies with orthogonal top interconnect layers |
US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
US10672663B2 (en) | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D chip sharing power circuit |
KR102393946B1 (en) | 2016-10-07 | 2022-05-03 | 엑셀시스 코포레이션 | Direct-bonded native interconnect and active base die |
US10600691B2 (en) | 2016-10-07 | 2020-03-24 | Xcelsis Corporation | 3D chip sharing power interconnect layer |
US10607136B2 (en) | 2017-08-03 | 2020-03-31 | Xcelsis Corporation | Time borrowing between layers of a three dimensional chip stack |
US20180220926A1 (en) * | 2017-02-06 | 2018-08-09 | Boston Scientific Scimed Inc. | Electromagnetic navigation system with magneto-resistive sensors and application-specific integrated circuits |
US11824009B2 (en) * | 2018-12-10 | 2023-11-21 | Preferred Networks, Inc. | Semiconductor device and data transferring method for semiconductor device |
CN112018093A (en) * | 2019-05-31 | 2020-12-01 | 西部数据技术公司 | Semiconductor device with top die positioned to reduce die cracking |
US11599299B2 (en) | 2019-11-19 | 2023-03-07 | Invensas Llc | 3D memory circuit |
KR20230067008A (en) * | 2021-11-08 | 2023-05-16 | 에스케이하이닉스 주식회사 | Stack packages including bonding wire interconnections |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6433421B2 (en) * | 2000-04-14 | 2002-08-13 | Hitachi, Ltd. | Semiconductor device |
US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
US20050186705A1 (en) * | 2002-07-31 | 2005-08-25 | Jackson Timothy L. | Semiconductor dice having backside redistribution layer accessed using through-silicon vias, methods |
US7009303B2 (en) * | 2003-11-17 | 2006-03-07 | Renesas Technology Corp. | Multi-chip module |
US20060267173A1 (en) * | 2005-05-26 | 2006-11-30 | Sandisk Corporation | Integrated circuit package having stacked integrated circuits and method therefor |
US7547963B2 (en) * | 2000-01-17 | 2009-06-16 | Renesas Technology Corp. | Semiconductor device and its wiring method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026718B1 (en) * | 1998-09-25 | 2006-04-11 | Stmicroelectronics, Inc. | Stacked multi-component integrated circuit microprocessor |
JP3669889B2 (en) * | 1999-04-28 | 2005-07-13 | シャープ株式会社 | Semiconductor integrated circuit device |
JP4615189B2 (en) | 2003-01-29 | 2011-01-19 | シャープ株式会社 | Semiconductor device and interposer chip |
KR100498488B1 (en) | 2003-02-20 | 2005-07-01 | 삼성전자주식회사 | Stacked semiconductor package and fabricating method the same |
JP4063796B2 (en) * | 2004-06-30 | 2008-03-19 | 日本電気株式会社 | Multilayer semiconductor device |
US8324725B2 (en) * | 2004-09-27 | 2012-12-04 | Formfactor, Inc. | Stacked die module |
US7297574B2 (en) * | 2005-06-17 | 2007-11-20 | Infineon Technologies Ag | Multi-chip device and method for producing a multi-chip device |
KR100650767B1 (en) * | 2005-11-10 | 2006-11-27 | 주식회사 하이닉스반도체 | Chip of pad redistribution and manufacture method thereof and stack type package with the chip |
US7732930B2 (en) * | 2006-09-06 | 2010-06-08 | Kabushiki Kaisha Toshiba | Semiconductor device, relay chip, and method for producing relay chip |
KR100905784B1 (en) * | 2007-08-16 | 2009-07-02 | 주식회사 하이닉스반도체 | Through electrode for semiconductor package and semiconductor package having the through electrode |
-
2009
- 2009-04-27 KR KR1020090036731A patent/KR20100117977A/en not_active Application Discontinuation
-
2010
- 2010-03-22 US US12/659,775 patent/US8299627B2/en active Active
-
2012
- 2012-09-28 US US13/630,619 patent/US8643193B2/en active Active
-
2014
- 2014-02-03 US US14/170,972 patent/US8901749B2/en active Active
- 2014-09-19 US US14/491,302 patent/US9184156B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547963B2 (en) * | 2000-01-17 | 2009-06-16 | Renesas Technology Corp. | Semiconductor device and its wiring method |
US6433421B2 (en) * | 2000-04-14 | 2002-08-13 | Hitachi, Ltd. | Semiconductor device |
US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
US20050186705A1 (en) * | 2002-07-31 | 2005-08-25 | Jackson Timothy L. | Semiconductor dice having backside redistribution layer accessed using through-silicon vias, methods |
US7009303B2 (en) * | 2003-11-17 | 2006-03-07 | Renesas Technology Corp. | Multi-chip module |
US20060267173A1 (en) * | 2005-05-26 | 2006-11-30 | Sandisk Corporation | Integrated circuit package having stacked integrated circuits and method therefor |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9377825B2 (en) | 2008-02-08 | 2016-06-28 | Renesas Electronics Corporation | Semiconductor device |
US20130069249A1 (en) * | 2008-02-08 | 2013-03-21 | Renesas Electronics Corporation | Semiconductor device |
US8754534B2 (en) * | 2008-02-08 | 2014-06-17 | Renesas Electronics Corporation | Semiconductor device |
US7989943B2 (en) * | 2009-04-10 | 2011-08-02 | Hynix Semiconductor Inc. | Staircase shaped stacked semiconductor package |
US20100258929A1 (en) * | 2009-04-10 | 2010-10-14 | Kim Seung Jee | Staircase shaped stacked semiconductor package |
US8492889B2 (en) * | 2009-09-17 | 2013-07-23 | SK Hynix Inc. | Semiconductor package |
US9496216B2 (en) | 2011-12-22 | 2016-11-15 | Samsung Electronics Co., Ltd. | Semiconductor package including stacked semiconductor chips and a redistribution layer |
US9202796B2 (en) | 2013-01-31 | 2015-12-01 | Samsung Electronics Co., Ltd. | Semiconductor package including stacked chips and a redistribution layer (RDL) structure |
KR20150009881A (en) * | 2013-07-17 | 2015-01-27 | 삼성전자주식회사 | Semiconductor package |
US9379062B2 (en) * | 2013-07-17 | 2016-06-28 | Samsung Electronics Co., Ltd. | Semiconductor package |
US20150021787A1 (en) * | 2013-07-17 | 2015-01-22 | Samsung Electronics Co., Ltd. | Semiconductor package |
KR102122460B1 (en) | 2013-07-17 | 2020-06-12 | 삼성전자주식회사 | Semiconductor package |
US20150061160A1 (en) * | 2013-08-28 | 2015-03-05 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the semiconductor device |
US9209153B2 (en) * | 2013-08-28 | 2015-12-08 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the semiconductor device |
US20170040289A1 (en) * | 2015-08-03 | 2017-02-09 | Samsung Electronics Co., Ltd. | Semiconductor package |
US11450583B2 (en) * | 2018-09-28 | 2022-09-20 | Samsung Electronics Co., Ltd. | Semiconductor packages |
US11764121B2 (en) | 2018-09-28 | 2023-09-19 | Samsung Electronics Co., Ltd. | Semiconductor packages |
CN111725186A (en) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | Semiconductor device with a plurality of semiconductor chips |
Also Published As
Publication number | Publication date |
---|---|
US8901749B2 (en) | 2014-12-02 |
US8299627B2 (en) | 2012-10-30 |
US20150001737A1 (en) | 2015-01-01 |
US8643193B2 (en) | 2014-02-04 |
US9184156B2 (en) | 2015-11-10 |
KR20100117977A (en) | 2010-11-04 |
US20130026656A1 (en) | 2013-01-31 |
US20140145352A1 (en) | 2014-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8299627B2 (en) | Semiconductor packages and electronic systems including the same | |
US8890330B2 (en) | Semiconductor packages and electronic systems including the same | |
US10991640B2 (en) | Semiconductor packages including bridge die | |
US10997108B2 (en) | Memory package including buffer, expansion memory module, and multi-module memory system | |
US9589930B2 (en) | Semiconductor package including stepwise stacked chips | |
US8611125B2 (en) | Multi-chip packages providing reduced signal skew and related methods of operation | |
US8643175B2 (en) | Multi-channel package and electronic system including the same | |
KR101984831B1 (en) | Semiconductor package | |
US10128191B2 (en) | Package-on-package type package including integrated circuit devices and associated passive components on different levels | |
US9559079B2 (en) | Semiconductor stack packages | |
US9466593B2 (en) | Stack semiconductor package | |
TWI826584B (en) | Stack packages including an interconnection structure | |
US20160118371A1 (en) | Semiconductor package | |
US20210118800A1 (en) | Semiconductor packages | |
US20200286856A1 (en) | Stack semiconductor packages having wire-bonding connection structure | |
US20230058485A1 (en) | Semiconductor packages | |
US11315905B2 (en) | Semiconductor packages including a bonding wire branch structure | |
US9875995B2 (en) | Stack chip package and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, HYE-JIN;KIM, BYUNG-SEO;YOUN, SUN-IL;REEL/FRAME:024165/0543 Effective date: 20100310 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 12 |