US20090243001A1 - Sequential deposition and anneal of a dielectic layer in a charge trapping memory device - Google Patents
Sequential deposition and anneal of a dielectic layer in a charge trapping memory device Download PDFInfo
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- US20090243001A1 US20090243001A1 US12/080,166 US8016608A US2009243001A1 US 20090243001 A1 US20090243001 A1 US 20090243001A1 US 8016608 A US8016608 A US 8016608A US 2009243001 A1 US2009243001 A1 US 2009243001A1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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Definitions
- the invention is in the field of semiconductor devices, more specifically pertaining to non-volatile charge trap memory devices, such as SONOS devices.
- FIG. 1A illustrates a cross-sectional view of a conventional non-volatile charge trap memory device where an oxide-nitride-oxide (ONO) stack is used to store charge in a nitride layer having a high density of charge trap states, forming a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) transistor.
- the first “Semiconductor” refers to the channel region of the substrate
- the first “Oxide” refers to the tunneling layer
- “Nitride” refers to the charge trapping layer
- the second “Oxide” refers to the blocking layer
- the second “Semiconductor” refers to the gate layer.
- the charge stored in the nitride trapping layer enables a SONOS transistor to provide non-volatility memory (NVM).
- NVM non-volatility memory
- non-volatile charge trap memory device 100 includes a SONOS gate stack 104 including a conventional ONO portion 106 formed over a silicon substrate 102 .
- Non-volatile charge trap memory device 100 further includes source and drain regions 110 on either side of SONOS gate stack 104 to define a channel region 112 .
- SONOS gate stack 104 includes a poly-silicon gate layer 108 formed above and in contact with ONO portion 106 .
- Poly-silicon gate layer 108 is electrically isolated from silicon substrate 102 by ONO portion 106 .
- ONO portion 106 typically includes an oxide tunneling layer 106 A, a nitride or oxynitride charge trapping layer 106 B, and an oxide blocking layer 106 C overlying charge trapping layer 106 B.
- One limitation of conventional SONOS transistors is quality of the dielectric employed for the charge trapping layer 106 B. While a poor quality dielectric provides a beneficially high density of trap states for charge storage, the poor quality dielectric is detrimentally leaky and unable to retain the trapped charge. This leakage limits the retention time of the charge trap memory device. It is desirable to selectively tailor the quality of the charge trapping layer 106 B in a manner that provides a density of trap states sufficient for charge storage and a reduced rate of trapped charge leakage.
- FIG. 1B A conventional method for forming the ONO portion 106 of FIG. 1A is shown in FIG. 1B .
- the tunneling layer is grown by a thermal oxidation from the silicon substrate.
- a high quality silicon dioxide layer may be produced with such a process.
- a low pressure chemical vapor deposition (LPCVD) process is employed while a similar deposition process is typically used at operation 153 to form a blocking layer.
- LPCVD low pressure chemical vapor deposition
- the quality of the deposited layer is typically limited by the non-equilibrium deposition mode. Thus, even when deposition conditions are tuned in an effort to deposit a good quality oxynitride layer, there is still a significant quantity of hydrogen and non-terminated bonds within the layer.
- FIG. 1A illustrates a cross-sectional view of a conventional SONOS non-volatile charge trap memory device
- FIG. 1B illustrates a general method of forming the conventional ONO portion of the SONOS non-volatile charge trap memory device depicted in FIG. 1A ;
- FIG. 2 illustrates a flow diagram depicting sequences of particular operations to iteratively deposit and anneal a portion of a charge trapping layer, in accordance with particular embodiments of non-volatile charge trap memory device of the present invention
- FIG. 3 illustrates a illustrate a flow diagram representing operations of an annealing process to form a high quality oxygen-rich silicon oxynitride layer and a low quality, non-annealed silicon-rich silicon oxynitride layer to form a multi-layered charge trapping layer, in accordance with particular embodiments of the present invention
- FIG. 4A illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a tunneling layer is formed on a semiconductor substrate, in accordance with an embodiment of the present invention
- FIG. 4B illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a first thickness of a dielectric material is deposited on the tunneling layer, in accordance with an embodiment of the present invention
- FIG. 4C illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which the first deposited thickness of the dielectric material is annealed, in accordance with an embodiment of the present invention
- FIG. 4D illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a second thickness of the a dielectric material is deposited on the annealed dielectric layer, in accordance with an embodiment of the present invention
- FIG. 4E illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which the second deposited thickness of a dielectric material is annealed, in accordance with an embodiment of the present invention
- FIG. 4F illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a dielectric material is deposited on the annealed dielectric material to complete formation of the charge trapping layer, in accordance with an embodiment of the present invention
- FIG. 4G illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a blocking layer is formed on the charge trapping layer, in accordance with an embodiment of the present invention.
- FIG. 4H illustrates a cross-sectional view of a non-volatile charge trap memory device incorporating a charge trapping layer including an non-annealed deposited dielectric layer on an annealed deposited dielectric layer, in accordance with an embodiment of the present invention.
- the non-volatile trapped-charge memory device is a SONOS-type device wherein a charge trapping layer is an insulator layer, such as a silicon nitride or silicon oxynitride (Si x O y N z ).
- the non-volatile trapped-charge memory device is a Flash-type device wherein the charge trapping layer is a conductor layer or a semiconductor layer, such as poly-silicon.
- particular embodiments may be practiced without one or more of these specific details, or in combination with other known methods, materials, and apparatuses.
- the terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one layer with respect to other layers.
- one layer deposited or disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers.
- one layer deposited or disposed between layers may be directly in contact with the layers or may have one or more intervening layers.
- a first layer “on” a second layer is in contact with that second layer.
- the relative position of one layer with respect to other layers is provided assuming operations deposit, modify and remove films relative to a starting substrate without consideration of the absolute orientation of the substrate.
- FIG. 2 illustrates a flow diagram, generally depicting a series of operations employed in the fabrication method 200 of a non-volatile charge trap memory device, in accordance with particular embodiments of the present invention. Operations are to be understood as consisting one or more fabrication processes, each requiring one or more piece of semiconductor processing equipment.
- Method 200 begins at operation 202 with formation of a dielectric layer on a semiconductor substrate to functionally serve as a tunneling layer for a non-volatile charge trap memory device, such as a SONOS device.
- an “annealable portion” of a first dielectric layer is deposited over the tunneling layer.
- An “annealable portion” is used herein to refer to a functional thickness of a deposited film which may be efficiently annealed. Because diffusion into and out of the layer is limited by film thickness, anneal times scale nonlinearly with thickness and therefore become less efficient. The approximate thickness of an annealable portion is dependent on a diffusion distance of a particular species in a particular dielectric material at a particular temperature and pressure.
- the diffusion distance is on the order of 1.0 nm to 1.5 nm.
- the annealable portion of an oxynitride layer is about 1.0 nm to 1.5 nm.
- the annealable portion of an oxynitride layer would be somewhat greater.
- the annealable portion of the first dielectric layer is annealed to improve the quality of the deposited first dielectric layer.
- the anneal improves the quality of the deposited first dielectric layer by reducing the number of trap states, non-terminated bonds and hydrogen species present in the first dielectric layer “as-deposited.”
- deposition operation 203 is repeated wherein a second annealable portion of the first dielectric layer is deposited on the annealed portion previously formed, thereby thickening the first dielectric layer over the tunneling layer.
- Anneal operation 204 may then be repeated to anneal the second annealable portion of the first dielectric layer.
- deposition operation 203 and anneal operation 204 may be iterated to break a deposition into a number of sequential deposition-anneal operations performed as pairs to reach a desired annealed dielectric layer thickness.
- Such a method may be employed to form a dielectric layer having a stoichiometry attainable with only a deposition process but with a uniform material quality uncharacteristically high of a deposition process. It has been found that employing a sequential deposition-anneal-deposition-anneal process yields a dielectric with a considerably higher breakdown voltage (BV) than for a film formed without such a treatment.
- BV breakdown voltage
- a baseline of as-deposited dielectric provided a BV of about 6.1 V while a deposition-anneal process employing a 5 minute anneal yielded a BV of about 7.3 V.
- a flat band voltage decay rate (Vfb) was found to be reduced by approximately 30-40% for the sequential deposition-anneal treatment.
- the combination of attributes of a sequentially deposited-annealed dielectric material is advantageous for an interface material between a tunneling layer and a charge trapping layer of a charge trap memory device.
- the interface material keeps stored charged away from the substrate while still providing a transition from the low trap density of a thermally grown silicon dioxide tunneling layer to a high trap density of a deposited silicon oxynitride charge trapping layer.
- the series of deposition-anneal sequences may be more efficient than first depositing to layer to a thickness greater than the diffusion distance and then annealing because annealing a layer of a thickness significantly greater than the diffusion distance can be expected to require a processing time significantly longer than a sum of anneal process times of the iterated anneal operation 204 .
- method 200 then proceeds to operation 207 where a second dielectric layer is deposited to complete the charge trapping layer.
- the second dielectric layer may be deposited under conditions optimized for a low quality dielectric having a high density of traps and non-terminated bonds which is beneficial for holding a large quantity of charge.
- the second dielectric layer since the first dielectric is layer fully annealed, the second dielectric layer may be left substantially non-annealed, in the as-deposited state to retain the highest density of trap states. In this manner, annealing of one portion of the stack (e.g. interface of the tunneling layer and charge trapping layer) is without detriment to another portion (e.g. trap centroid within the thickness of non-annealed portion of the charge trapping layer).
- a blocking layer is formed on the charge trapping layer 208 to complete an ONO stack of a charge trap memory device, such as a SONOS transistor.
- substrate 400 may be composed of any material suitable for semiconductor device fabrication.
- substrate 400 is a bulk substrate comprised of a single crystal of semiconductor material which may include, but is not limited to, silicon, germanium, silicon/germanium or a III-V compound semiconductor material.
- substrate 400 is comprised of a bulk layer with a top epitaxial layer.
- the bulk layer is comprised of a single crystal of a material which may include, but is not limited to, silicon, germanium, silicon/germanium, a III-V compound semiconductor material and quartz
- the top epitaxial layer is comprised of a single crystal layer which may include, but is not limited to, silicon, germanium, silicon/germanium and a III-V compound semiconductor material.
- substrate 400 is comprised of a top epitaxial layer on a middle insulator layer which is above a lower bulk layer.
- the top epitaxial layer is comprised of a single crystal layer which may include, but is not limited to, silicon (i.e.
- the insulator layer is comprised of a material which may include, but is not limited to, silicon dioxide, silicon nitride and silicon oxynitride.
- the lower bulk layer is comprised of a amorphous, polycrystalline or single crystal material which may include, but is not limited to, silicon, germanium, silicon/germanium, a III-V compound semiconductor material and quartz.
- Tunneling layer 402 may be composed of a material and have a thickness suitable to allow charge carriers to tunnel into the charge trapping layer under an applied gate bias, while maintaining a suitable barrier to leakage when a non-volatile charge trap memory device is unbiased.
- tunneling layer 402 is a commonly known dielectric layer, such as silicon dioxide (SiO 2 ), a silicon oxynitride (SiO x N y (H z )), a silicon dioxide that is subsequently nitridized, or a stack dielectric made of silicon dioxide and silicon nitride (Si 3 N 4 ).
- silicon oxynitride as “oxynitride”
- silicon nitride as “nitride,” etc.
- tunneling layer 402 is formed by an oxidation process where the top surface of substrate 400 is consumed to form tunneling layer 402 .
- substrate 400 is composed of silicon and tunneling layer 402 is composed of silicon dioxide.
- the tunneling layer may have a physical thickness of between about 1.5 nm and 3.0 nm.
- Tunneling layer 402 may be formed by any oxidation process convention in the art. For example, wet or dry oxidation process may be employed at a temperature approximately in the range of 950-1100° C.
- FIG. 4B illustrates a cross-sectional view of a first dielectric material 403 A formed on the tunneling layer 402 , corresponding to operation 303 of FIG. 3 .
- the first dielectric material 403 A has a composition distinct from that of the tunneling layer 402 .
- the first dielectric material 403 A may include, but is not limited to, silicon nitride, silicon oxynitride, oxygen-rich silicon oxynitride or silicon-rich silicon oxynitride.
- the first dielectric material 403 A functionally serves as a portion of a charge trapping layer.
- the first dielectric material 403 A functionally serves as barrier to charge loss from a subsequently formed charge trapping layer to the substrate 400 .
- oxygen-rich and “silicon-rich” are relative to a stoichiometric silicon nitride, or “nitride,” commonly employed in the art having a composition of (Si 3 N 4 ) and with a refractive index (RI) of approximately 2.0.
- nitride commonly employed in the art having a composition of (Si 3 N 4 ) and with a refractive index (RI) of approximately 2.0.
- RI refractive index
- films described herein as “silicon-rich” entail a shift from stoichiometric silicon nitride toward a higher wt % of silicon with less oxygen than an “oxygen-rich” film.
- a silicon-rich silicon oxynitride film is therefore more like silicon and the RI is increased toward the 3.5 RI of pure silicon.
- the first dielectric material 403 A comprises an oxygen-rich silicon oxynitride layer.
- the oxygen-rich stoichiometry of the first dielectric material 403 A being more like silicon dioxide relative to silicon nitride, provides a good quality interface with tunneling layer 402 .
- the composition of the oxygen-rich oxynitride results in the first dielectric material 403 A having a RI in the range of 1.7 and 1.9, preferably about 1.8, as deposited, with an annealable thickness of between approximately 1.0 nm and approximately 1.5 nm in preparation for an efficient anneal.
- RI measurements become highly accurate with current assay techniques only when a film has a thickness of at least 20 nm, which is substantially thicker than the film thickness employed in a charge trap memory device, such as a SONOS transistor.
- the RI therefore, may be measured on a film deposited with the same method as that employed to for the charge trapping layer(s), but for a longer process time to produce a thicker film enabling a more accurate measurement.
- the RI values provided herein, while best measured on bulk films of at least 20 nm in thickness are well correlated with the composition of the dielectric materials deposited to lesser thicknesses described herein.
- the oxygen-rich stoichiometry of the first dielectric material 403 A is deposited with a batch or single-wafer LPCVD chamber 301 of FIG. 3 .
- the LPCVD process may employ gases such as, but not limited to, dichlorosilane (H 2 SiCl 2 ), bis-(tert-butylamino)silane (BTBAS), ammonia (NH 3 ) or nitrous oxide (N 2 O).
- the formation process of an “oxygen-rich” material may also be characterized based on the 3:1 volumetric flow rate ratio, SiH 2 Cl 2 :NH 3 , commonly employed to produce a stoichiometric (Si 3 N 4 ) with a CVD method.
- the oxygen-rich oxynitride film is therefore formed with a relatively higher volumetric flow rate of oxidizer (e.g. N 2 O) than used for the silicon-rich oxynitride film.
- the first dielectric material 403 A may be formed at a temperature less than the temperature used to form the tunneling layer 402 .
- an oxygen-rich oxynitride film is formed by introducing a process gas mixture including N 2 O, NH 3 and SiH 2 Cl 2 , while maintaining the chamber at a pressure approximately in the range of 200-500 mTorr, and maintaining substrate 400 at a temperature approximately in the range of 700-850° C., for a period approximately in the range of 2.5-20 minutes.
- the process gas mixture includes N 2 O and NH 3 at a high volumetric flow rate ratio of about 1:1 to about 3:1 N 2 O:NH 3 while the SiH 2 Cl 2 to NH 3 is also at a high volumetric flow rate ratio from about 3.5:1 to 8:1 SiH 2 Cl 2 :NH 3 .
- the N 2 O:NH 3 ratio is about 2:1. while the SiH 2 Cl 2 :NH 3 is at a ratio of about 6:1.
- the gases may be introduced at a flow rate approximately in the range of 5-200 standard cubic centimeters per minute (sccm).
- single wafer LPCVD chambers commercially available may be employed with suitable process conditions for an oxygen-rich oxynitride of high quality. Such conditions may be readily determined by one of ordinary skill in the art based on the conditions provided by for a batch process.
- anneal operation 304 is performed on the first dielectric material 403 A.
- the anneal exposes the first dielectric material 403 A to a passivating species at a sufficient temperature, pressure and time to passivate trap states, non-terminated bonds and hydrogen incorporated during the deposition of the first dielectric material 403 A.
- the anneal operation 304 is performed with at least one of a higher temperature or higher pressure than that employed for the deposition of the first dielectric material 403 A at operation 303 .
- the anneal operation 304 may be performed at a temperature approximately in the range of 800-825° C.
- the process pressure of the anneal operation 304 may be increased to be approximately in the range of 500 mTorr-2 Torr.
- both the temperature and pressure of the anneal are similarly incremented above the parameters at which the first dielectric material 403 A is deposited.
- the anneal operation 304 may be of short duration.
- the anneal operation 304 may be performed for a duration approximately in the range of 30-60 seconds for a single substrate apparatus or approximately in the range of 5-20 minutes in a batch processing furnace. It will be appreciated that even batch processing furnaces are capable of quickly ramping temperatures for anneal processes because no deposition is to occur.
- the anneal ambient may include, a gas such as, but not limited to, nitrogen (N 2 ), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), nitric oxide (NO), ammonia (NH 3 ), or deuterated ammonia (ND 3 ).
- a two step anneal is performed as part of the anneal operation 304 .
- an NH 3 or ND 3 atmosphere is provided at anneal operation 305 to reduce the silicon-rich sites normally present in deposited silicon oxynitride. Silicon-rich sites will typically include dangling bonds within an oxide-silicon interface that may bond to atomic hydrogen (H) or deuterium (D).
- an N 2 O or NO ambient is provided to reduce hydrogen content in the first thickness of the first dielectric material 403 A.
- an NO ambient is advantageous for reducing the amount the first dielectric material 403 A will reoxidize.
- the duration of each anneal operation ( 405 and 406 ) is approximately in the range of 30 seconds to 60 seconds for a single substrate apparatus or approximately in the range of 5 minutes to 20 minutes in a batch processing apparatus. Because deuterium in particular cannot readily diffuse through silicon nitride, limiting the first thickness of the first dielectric layer to less than 1.5 nm is particularly important to enable such short anneal durations.
- the NH 3 or ND 3 atmosphere provided in anneal operation 305 is at a higher temperature, higher pressure, or both higher temperature and higher pressure, than that employed in the deposition operation 303 .
- the N 2 O atmosphere may be provided in anneal operation 306 at a higher temperature, higher pressure, or both higher temperature and higher pressure than that employed in the anneal operation 305 .
- deuterium is incorporated into the first thickness of first dielectric material 403 A to render a deuterated layer 404 A, as depicted in FIG. 4C .
- first thickness was limited to an annealable thickness (e.g. less than 1.5 nm)
- the level of deuterium incorporation may be much higher than for films which may have deuterium merely as a result of diffusion from an external source of deuterium, such as a subsequent deuterium anneal performed after a full SONOS stack is formed.
- an annealable thickness of a second dielectric material 403 B is deposited on the first thickness of first dielectric material 403 A.
- the composition of the second dielectric material 403 B may be the same as that of first dielectric material 403 A to increase the thickness of the first dielectric material 403 A beyond that of the first iteration of deposition and anneal.
- deposition operation 303 of FIG. 3 is repeated to deposit a second annealable thickness of oxygen-rich silicon oxynitride. This second annealable thickness may again be between approximately 1.0 nm and approximately 1.5 nm in preparation for an efficient anneal, just as for the first thickness of first dielectric material 403 A.
- the second dielectric material 403 B is deposited with a different stoichiometry than the first dielectric material 403 A to perform a stepwise grading of the dielectric material composition with each successive iteration of the deposition-anneal sequence.
- a second iteration of the anneal operation 304 may then be performed to anneal the second dielectric material 403 B.
- the second iteration may again include either or both anneal operations 305 and 306 .
- ND 3 is employed in the second iteration of the anneal operation 304
- deuterium is incorporated into the second dielectric material 403 B to render a second deuterated layer 404 B, depicted in FIG. 4E .
- the deuterium concentration profile across deuterated layers 404 A and 404 B is tunable.
- the deuterated layers 404 A and 404 B containing deuterium as-iteratively annealed may provide a relatively higher deuterium concentration at the interface of the tunneling layer as well as a deuterium concentration profile that is configurable to be other than that dictated by a single diffusion process.
- the deuterated layer has a substantially uniform deuterium concentration profile throughout the thickness of the first and second deuterated layers 404 A and 404 B.
- the deuterium concentration would be graded continuously across the first and second dielectric material.
- additional deposition-anneal iterations may be performed.
- a third iteration may be performed to reach a cumulative thickness of oxygen-rich silicon oxynitride between approximately 2.5 nm and approximately 3.5 nm.
- a thickness of a dielectric material which is not to be annealed may be deposited on the annealed layer(s).
- a silicon-rich oxynitride layer 407 is deposited on the deuterated layer 404 B.
- the silicon-rich oxynitride layer 407 may functionally serve as a charge trapping layer.
- the silicon-rich oxynitride layer 407 provides a high density of charge traps by incorporating a greater amount of silicon than the oxygen-rich silicon oxynitride material annealed and/or deuterated.
- the composition of the silicon-rich oxynitride results in the silicon-rich oxynitride layer 407 having an RI in the range of 1.9 and 2.1 and preferably about 2.
- the silicon-rich oxynitride layer 407 has a thickness approximately in the range of 6-8 nm.
- the silicon-rich oxynitride layer 407 is formed by introducing a process gas mixture including N 2 O, NH 3 and SiH 2 Cl 2 , while maintaining the chamber at a pressure approximately in the range of 5-500 mTorr, and maintaining substrate 400 at a temperature approximately in the range of 700-850° C., for a period approximately in the range of 2.5-20 minutes in a batch furnace.
- the process gas mixture includes N 2 O and NH 3 at a volumetric flow rate ratio from about 1:8 to about 1:4 (N 2 O:NH 3 ) with SiH 2 Cl 2 and NH 3 at a volumetric flow rate ratio from about 3.5:1 to 6:1 (SiH 2 Cl 2 :NH 3 ).
- the N 2 O and NH 3 are provided at a volumetric flow rate ratio of about 1:5. (N 2 O:NH 3 ) while the SiH 2 Cl 2 and NH 3 is at a volumetric flow rate ratio of about 4:1 (SiH 2 Cl 2 :NH 3 ).
- the gases are introduced at a flow rate approximately in the range of 5 to 200 sccm.
- a blocking layer of the of the non-volatile charge trap memory device is then formed to completed method 300 .
- a blocking layer 408 is deposited over the charge trapping layer 407 .
- a blocking layer may be of a material and have a thickness selected to maintain a sufficient barrier to charge leakage while minimizing reductions gate electrode capacitance. Any conventional means of forming the blocking layer 408 may be employed, such as, but not limited to high temperature oxidation (HTO) processes.
- HTO high temperature oxidation
- FIG. 4H illustrates a cross-sectional view of a SONOS non-volatile charge trap memory device, in accordance with an embodiment of the present invention.
- a non-volatile charge trap memory device may be fabricated to include a patterned portion of the ONO stack.
- Charge trapping layer 404 further includes an annealed oxygen-rich silicon oxynitride layer 406 and non-annealed a silicon-rich silicon oxynitride layer 407 .
- the oxygen-rich silicon oxynitride layer 406 has a higher deuterium concentration than that of the silicon-rich silicon oxynitride layer 407 .
- the oxygen-rich silicon oxynitride layer 406 includes a substantially uniform deuterium concentration across the thickness of the annealed oxygen-rich silicon oxynitride layer 406 .
- the SONOS device includes a patterned portion of the ONO stack formed over a substrate 400 .
- a gate layer 409 is disposed on the blocking layer 408 .
- the non-volatile charge trap memory device further includes source and drain regions 412 in substrate 400 on either side of the ONO stack, defining a channel region 414 in substrate 400 underneath the ONO stack.
- a pair of dielectric spacers 410 isolates the sidewalls of tunneling layer 402 , charge trapping layer 404 , blocking layer 408 and gate layer 409 .
- Gate layer 409 may be composed of any conductor or semiconductor material suitable for accommodating a bias during operation of a SONOS-type transistor.
- gate layer 409 is formed by a chemical vapor deposition process and is composed of doped poly-crystalline silicon.
- gate layer 409 is formed by physical vapor deposition and is composed of a metal-containing material which may include, but is not limited to, metal nitrides, metal carbides, metal silicides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt or nickel.
- Source and drain regions 412 may be any regions having opposite conductivity to channel region 414 .
- source and drain regions 412 are N-type doped regions while channel region 414 is a P-type doped region.
- substrate 400 and, hence, channel region 414 is composed of boron-doped single-crystal silicon having a boron concentration in the range of 1 ⁇ 10 15 -1 ⁇ 10 19 atoms/cm 3 .
- Source and drain regions 412 are composed of phosphorous- or arsenic-doped regions having a concentration of N-type dopants in the range of 5 ⁇ 10 16 -5 ⁇ 10 19 atoms/cm 3 .
- source and drain regions 412 have a depth in substrate 400 in the range of 80-200 nanometers.
- source and drain regions 412 are P-type doped regions while channel region 414 is an n-type doped region.
Abstract
Description
- The invention is in the field of semiconductor devices, more specifically pertaining to non-volatile charge trap memory devices, such as SONOS devices.
-
FIG. 1A illustrates a cross-sectional view of a conventional non-volatile charge trap memory device where an oxide-nitride-oxide (ONO) stack is used to store charge in a nitride layer having a high density of charge trap states, forming a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) transistor. In functional terms, the first “Semiconductor” refers to the channel region of the substrate, the first “Oxide” refers to the tunneling layer, “Nitride” refers to the charge trapping layer, the second “Oxide” refers to the blocking layer and the second “Semiconductor” refers to the gate layer. The charge stored in the nitride trapping layer enables a SONOS transistor to provide non-volatility memory (NVM). - As further shown in
FIG. 1A , non-volatile chargetrap memory device 100 includes a SONOSgate stack 104 including aconventional ONO portion 106 formed over asilicon substrate 102. Non-volatile chargetrap memory device 100 further includes source anddrain regions 110 on either side of SONOSgate stack 104 to define achannel region 112. SONOSgate stack 104 includes a poly-silicon gate layer 108 formed above and in contact withONO portion 106. Poly-silicon gate layer 108 is electrically isolated fromsilicon substrate 102 byONO portion 106.ONO portion 106 typically includes anoxide tunneling layer 106A, a nitride or oxynitridecharge trapping layer 106B, and anoxide blocking layer 106C overlyingcharge trapping layer 106B. - One limitation of conventional SONOS transistors is quality of the dielectric employed for the
charge trapping layer 106B. While a poor quality dielectric provides a beneficially high density of trap states for charge storage, the poor quality dielectric is detrimentally leaky and unable to retain the trapped charge. This leakage limits the retention time of the charge trap memory device. It is desirable to selectively tailor the quality of thecharge trapping layer 106B in a manner that provides a density of trap states sufficient for charge storage and a reduced rate of trapped charge leakage. - A conventional method for forming the
ONO portion 106 ofFIG. 1A is shown inFIG. 1B . Inoperation 151, the tunneling layer is grown by a thermal oxidation from the silicon substrate. A high quality silicon dioxide layer may be produced with such a process. Then, atoperation 152, to form an oxynitride charge trapping layer, a low pressure chemical vapor deposition (LPCVD) process is employed while a similar deposition process is typically used atoperation 153 to form a blocking layer. In an LPCVD deposition, the quality of the deposited layer is typically limited by the non-equilibrium deposition mode. Thus, even when deposition conditions are tuned in an effort to deposit a good quality oxynitride layer, there is still a significant quantity of hydrogen and non-terminated bonds within the layer. - Embodiments of the present invention are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:
-
FIG. 1A illustrates a cross-sectional view of a conventional SONOS non-volatile charge trap memory device; -
FIG. 1B illustrates a general method of forming the conventional ONO portion of the SONOS non-volatile charge trap memory device depicted inFIG. 1A ; -
FIG. 2 illustrates a flow diagram depicting sequences of particular operations to iteratively deposit and anneal a portion of a charge trapping layer, in accordance with particular embodiments of non-volatile charge trap memory device of the present invention; -
FIG. 3 , illustrates a illustrate a flow diagram representing operations of an annealing process to form a high quality oxygen-rich silicon oxynitride layer and a low quality, non-annealed silicon-rich silicon oxynitride layer to form a multi-layered charge trapping layer, in accordance with particular embodiments of the present invention; -
FIG. 4A illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a tunneling layer is formed on a semiconductor substrate, in accordance with an embodiment of the present invention; -
FIG. 4B illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a first thickness of a dielectric material is deposited on the tunneling layer, in accordance with an embodiment of the present invention; -
FIG. 4C illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which the first deposited thickness of the dielectric material is annealed, in accordance with an embodiment of the present invention; -
FIG. 4D illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a second thickness of the a dielectric material is deposited on the annealed dielectric layer, in accordance with an embodiment of the present invention; -
FIG. 4E illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which the second deposited thickness of a dielectric material is annealed, in accordance with an embodiment of the present invention; -
FIG. 4F illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a dielectric material is deposited on the annealed dielectric material to complete formation of the charge trapping layer, in accordance with an embodiment of the present invention; -
FIG. 4G illustrates a cross-sectional view representing operations in the formation of a semiconductor structure in which a blocking layer is formed on the charge trapping layer, in accordance with an embodiment of the present invention; and -
FIG. 4H illustrates a cross-sectional view of a non-volatile charge trap memory device incorporating a charge trapping layer including an non-annealed deposited dielectric layer on an annealed deposited dielectric layer, in accordance with an embodiment of the present invention. - Embodiments of a non-volatile charge trap memory device are described herein with reference to figures. In accordance with one embodiment of the present invention, the non-volatile trapped-charge memory device is a SONOS-type device wherein a charge trapping layer is an insulator layer, such as a silicon nitride or silicon oxynitride (SixOyNz). In another embodiment, the non-volatile trapped-charge memory device is a Flash-type device wherein the charge trapping layer is a conductor layer or a semiconductor layer, such as poly-silicon. However, particular embodiments may be practiced without one or more of these specific details, or in combination with other known methods, materials, and apparatuses. In the following description, numerous specific details are set forth, such as specific materials, dimensions and processes parameters etc. to provide a thorough understanding of the present invention. In other instances, well-known semiconductor design and fabrication techniques have not been described in particular detail to avoid unnecessarily obscuring the present invention. Reference throughout this specification to “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.
- The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one layer with respect to other layers. As such, for example, one layer deposited or disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer deposited or disposed between layers may be directly in contact with the layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations deposit, modify and remove films relative to a starting substrate without consideration of the absolute orientation of the substrate.
-
FIG. 2 illustrates a flow diagram, generally depicting a series of operations employed in thefabrication method 200 of a non-volatile charge trap memory device, in accordance with particular embodiments of the present invention. Operations are to be understood as consisting one or more fabrication processes, each requiring one or more piece of semiconductor processing equipment. -
Method 200 begins atoperation 202 with formation of a dielectric layer on a semiconductor substrate to functionally serve as a tunneling layer for a non-volatile charge trap memory device, such as a SONOS device. Subsequently, atoperation 203, an “annealable portion” of a first dielectric layer is deposited over the tunneling layer. An “annealable portion” is used herein to refer to a functional thickness of a deposited film which may be efficiently annealed. Because diffusion into and out of the layer is limited by film thickness, anneal times scale nonlinearly with thickness and therefore become less efficient. The approximate thickness of an annealable portion is dependent on a diffusion distance of a particular species in a particular dielectric material at a particular temperature and pressure. For example, for diffusion of a nitrogen species through a silicon oxynitride dielectric at a temperature of about 800° C. and a pressure around 500 mTorr, the diffusion distance is on the order of 1.0 nm to 1.5 nm. Thus, in this example, the annealable portion of an oxynitride layer is about 1.0 nm to 1.5 nm. For other species, such as hydrogen, the annealable portion of an oxynitride layer would be somewhat greater. - Next, at
operation 204, the annealable portion of the first dielectric layer is annealed to improve the quality of the deposited first dielectric layer. The anneal improves the quality of the deposited first dielectric layer by reducing the number of trap states, non-terminated bonds and hydrogen species present in the first dielectric layer “as-deposited.” Next, if the thickness of the annealed first dielectric layer is not at a target thickness,deposition operation 203 is repeated wherein a second annealable portion of the first dielectric layer is deposited on the annealed portion previously formed, thereby thickening the first dielectric layer over the tunneling layer.Anneal operation 204 may then be repeated to anneal the second annealable portion of the first dielectric layer. - In this manner,
deposition operation 203 andanneal operation 204 may be iterated to break a deposition into a number of sequential deposition-anneal operations performed as pairs to reach a desired annealed dielectric layer thickness. Such a method may be employed to form a dielectric layer having a stoichiometry attainable with only a deposition process but with a uniform material quality uncharacteristically high of a deposition process. It has been found that employing a sequential deposition-anneal-deposition-anneal process yields a dielectric with a considerably higher breakdown voltage (BV) than for a film formed without such a treatment. For example, a baseline of as-deposited dielectric provided a BV of about 6.1 V while a deposition-anneal process employing a 5 minute anneal yielded a BV of about 7.3 V. Similarly, a flat band voltage decay rate (Vfb) was found to be reduced by approximately 30-40% for the sequential deposition-anneal treatment. - The combination of attributes of a sequentially deposited-annealed dielectric material is advantageous for an interface material between a tunneling layer and a charge trapping layer of a charge trap memory device. The interface material keeps stored charged away from the substrate while still providing a transition from the low trap density of a thermally grown silicon dioxide tunneling layer to a high trap density of a deposited silicon oxynitride charge trapping layer. Additionally, the series of deposition-anneal sequences may be more efficient than first depositing to layer to a thickness greater than the diffusion distance and then annealing because annealing a layer of a thickness significantly greater than the diffusion distance can be expected to require a processing time significantly longer than a sum of anneal process times of the iterated
anneal operation 204. - As further shown in
FIG. 2 , once the annealed layer thickness meets the targeted thickness, iteration of the deposition-anneal sequence is terminated. In the depicted embodiment,method 200 then proceeds tooperation 207 where a second dielectric layer is deposited to complete the charge trapping layer. The second dielectric layer may be deposited under conditions optimized for a low quality dielectric having a high density of traps and non-terminated bonds which is beneficial for holding a large quantity of charge. In particular embodiments, since the first dielectric is layer fully annealed, the second dielectric layer may be left substantially non-annealed, in the as-deposited state to retain the highest density of trap states. In this manner, annealing of one portion of the stack (e.g. interface of the tunneling layer and charge trapping layer) is without detriment to another portion (e.g. trap centroid within the thickness of non-annealed portion of the charge trapping layer). - Concluding
method 200, a blocking layer is formed on thecharge trapping layer 208 to complete an ONO stack of a charge trap memory device, such as a SONOS transistor. With the general method described, specific implementations are now described in more detail with reference to additional figures. - As depicted in
FIG. 3 ,method 300 begins with formation of the tunneling layer on a substrate atoperation 302. As further depicted inFIG. 4A ,substrate 400 may be composed of any material suitable for semiconductor device fabrication. In one embodiment,substrate 400 is a bulk substrate comprised of a single crystal of semiconductor material which may include, but is not limited to, silicon, germanium, silicon/germanium or a III-V compound semiconductor material. In another embodiment,substrate 400 is comprised of a bulk layer with a top epitaxial layer. In a specific embodiment, the bulk layer is comprised of a single crystal of a material which may include, but is not limited to, silicon, germanium, silicon/germanium, a III-V compound semiconductor material and quartz, while the top epitaxial layer is comprised of a single crystal layer which may include, but is not limited to, silicon, germanium, silicon/germanium and a III-V compound semiconductor material. In still another embodiment,substrate 400 is comprised of a top epitaxial layer on a middle insulator layer which is above a lower bulk layer. The top epitaxial layer is comprised of a single crystal layer which may include, but is not limited to, silicon (i.e. to form a silicon-on-insulator (SOI) semiconductor substrate), germanium, silicon/germanium and a III-V compound semiconductor material. The insulator layer is comprised of a material which may include, but is not limited to, silicon dioxide, silicon nitride and silicon oxynitride. The lower bulk layer is comprised of a amorphous, polycrystalline or single crystal material which may include, but is not limited to, silicon, germanium, silicon/germanium, a III-V compound semiconductor material and quartz. -
Tunneling layer 402 may be composed of a material and have a thickness suitable to allow charge carriers to tunnel into the charge trapping layer under an applied gate bias, while maintaining a suitable barrier to leakage when a non-volatile charge trap memory device is unbiased. In certain embodiments,tunneling layer 402 is a commonly known dielectric layer, such as silicon dioxide (SiO2), a silicon oxynitride (SiOxNy(Hz)), a silicon dioxide that is subsequently nitridized, or a stack dielectric made of silicon dioxide and silicon nitride (Si3N4). It should be appreciated that because silicon is implicitly present in conventional silicon-based microelectronic fabrication processing, it is customary in the art to simply refer to “silicon oxynitride” as “oxynitride” and silicon nitride as “nitride,” etc. - In accordance with an embodiment of the present invention,
tunneling layer 402 is formed by an oxidation process where the top surface ofsubstrate 400 is consumed to formtunneling layer 402. For example, in one embodiment,substrate 400 is composed of silicon andtunneling layer 402 is composed of silicon dioxide. The tunneling layer may have a physical thickness of between about 1.5 nm and 3.0 nm.Tunneling layer 402 may be formed by any oxidation process convention in the art. For example, wet or dry oxidation process may be employed at a temperature approximately in the range of 950-1100° C. -
FIG. 4B illustrates a cross-sectional view of a firstdielectric material 403A formed on thetunneling layer 402, corresponding tooperation 303 ofFIG. 3 . The firstdielectric material 403A has a composition distinct from that of thetunneling layer 402. The firstdielectric material 403A may include, but is not limited to, silicon nitride, silicon oxynitride, oxygen-rich silicon oxynitride or silicon-rich silicon oxynitride. In one embodiment, the firstdielectric material 403A functionally serves as a portion of a charge trapping layer. In another embodiment, the firstdielectric material 403A functionally serves as barrier to charge loss from a subsequently formed charge trapping layer to thesubstrate 400. - As used herein, the terms “oxygen-rich” and “silicon-rich” are relative to a stoichiometric silicon nitride, or “nitride,” commonly employed in the art having a composition of (Si3N4) and with a refractive index (RI) of approximately 2.0. Thus, “oxygen-rich” silicon oxynitride entails a shift from stoichiometric silicon nitride toward a higher wt % of silicon and oxygen (i.e. reduction of nitrogen). An oxygen-rich silicon oxynitride film is therefore more like silicon dioxide and the RI is reduced toward the 1.45 RI of pure silicon dioxide. Similarly, films described herein as “silicon-rich” entail a shift from stoichiometric silicon nitride toward a higher wt % of silicon with less oxygen than an “oxygen-rich” film. A silicon-rich silicon oxynitride film is therefore more like silicon and the RI is increased toward the 3.5 RI of pure silicon.
- In a specific embodiment, the first
dielectric material 403A comprises an oxygen-rich silicon oxynitride layer. The oxygen-rich stoichiometry of the firstdielectric material 403A, being more like silicon dioxide relative to silicon nitride, provides a good quality interface withtunneling layer 402. In one such embodiment, the composition of the oxygen-rich oxynitride results in the firstdielectric material 403A having a RI in the range of 1.7 and 1.9, preferably about 1.8, as deposited, with an annealable thickness of between approximately 1.0 nm and approximately 1.5 nm in preparation for an efficient anneal. - It will be appreciated by one of ordinary skill in the art that such RI measurements become highly accurate with current assay techniques only when a film has a thickness of at least 20 nm, which is substantially thicker than the film thickness employed in a charge trap memory device, such as a SONOS transistor. The RI, therefore, may be measured on a film deposited with the same method as that employed to for the charge trapping layer(s), but for a longer process time to produce a thicker film enabling a more accurate measurement. Nonetheless, it is to be understood that the RI values provided herein, while best measured on bulk films of at least 20 nm in thickness, are well correlated with the composition of the dielectric materials deposited to lesser thicknesses described herein.
- In a particular embodiment, the oxygen-rich stoichiometry of the first
dielectric material 403A is deposited with a batch or single-wafer LPCVD chamber 301 ofFIG. 3 . The LPCVD process may employ gases such as, but not limited to, dichlorosilane (H2SiCl2), bis-(tert-butylamino)silane (BTBAS), ammonia (NH3) or nitrous oxide (N2O). Just as the term “oxygen-rich” is relative to a stoichiometric Si3N4 material, the formation process of an “oxygen-rich” material may also be characterized based on the 3:1 volumetric flow rate ratio, SiH2Cl2:NH3, commonly employed to produce a stoichiometric (Si3N4) with a CVD method. The oxygen-rich oxynitride film is therefore formed with a relatively higher volumetric flow rate of oxidizer (e.g. N2O) than used for the silicon-rich oxynitride film. In certain embodiments, the firstdielectric material 403A may be formed at a temperature less than the temperature used to form thetunneling layer 402. - In a specific batch processing implementation, an oxygen-rich oxynitride film is formed by introducing a process gas mixture including N2O, NH3 and SiH2Cl2, while maintaining the chamber at a pressure approximately in the range of 200-500 mTorr, and maintaining
substrate 400 at a temperature approximately in the range of 700-850° C., for a period approximately in the range of 2.5-20 minutes. In one such embodiment, the process gas mixture includes N2O and NH3 at a high volumetric flow rate ratio of about 1:1 to about 3:1 N2O:NH3 while the SiH2Cl2 to NH3 is also at a high volumetric flow rate ratio from about 3.5:1 to 8:1 SiH2Cl2:NH3. In a preferred embodiment, the N2O:NH3 ratio is about 2:1. while the SiH2Cl2:NH3 is at a ratio of about 6:1. The gases may be introduced at a flow rate approximately in the range of 5-200 standard cubic centimeters per minute (sccm). In alternative embodiments, single wafer LPCVD chambers commercially available may be employed with suitable process conditions for an oxygen-rich oxynitride of high quality. Such conditions may be readily determined by one of ordinary skill in the art based on the conditions provided by for a batch process. - Following deposition of the first thickness of the first
dielectric material 403A,anneal operation 304 is performed on the firstdielectric material 403A. Generally, the anneal exposes the firstdielectric material 403A to a passivating species at a sufficient temperature, pressure and time to passivate trap states, non-terminated bonds and hydrogen incorporated during the deposition of the firstdielectric material 403A. - In one embodiment, the
anneal operation 304 is performed with at least one of a higher temperature or higher pressure than that employed for the deposition of the firstdielectric material 403A atoperation 303. For example, for an embodiment where the firstdielectric material 403A is deposited at a temperature approximately in the range of 700-800° C., theanneal operation 304 may be performed at a temperature approximately in the range of 800-825° C. In another implementation where firstdielectric material 403A is deposited at a process pressure approximately in the range of 200-300 mTorr, the process pressure of theanneal operation 304 may be increased to be approximately in the range of 500 mTorr-2 Torr. In still other embodiments, both the temperature and pressure of the anneal are similarly incremented above the parameters at which the firstdielectric material 403A is deposited. - Because the first thickness of the first
dielectric material 403A was limited to between approximately 1.0 nm and 1.5 nm, theanneal operation 304 may be of short duration. For example, theanneal operation 304 may be performed for a duration approximately in the range of 30-60 seconds for a single substrate apparatus or approximately in the range of 5-20 minutes in a batch processing furnace. It will be appreciated that even batch processing furnaces are capable of quickly ramping temperatures for anneal processes because no deposition is to occur. - The anneal ambient may include, a gas such as, but not limited to, nitrogen (N2), nitrous oxide (N2O), nitrogen dioxide (NO2), nitric oxide (NO), ammonia (NH3), or deuterated ammonia (ND3). In the particular embodiment depicted in
FIG. 4 , a two step anneal is performed as part of theanneal operation 304. First, an NH3 or ND3 atmosphere is provided atanneal operation 305 to reduce the silicon-rich sites normally present in deposited silicon oxynitride. Silicon-rich sites will typically include dangling bonds within an oxide-silicon interface that may bond to atomic hydrogen (H) or deuterium (D). Then, atanneal operation 306, an N2O or NO ambient is provided to reduce hydrogen content in the first thickness of the firstdielectric material 403A. Embodiments with an NO ambient are advantageous for reducing the amount the firstdielectric material 403A will reoxidize. In such multi-step anneal embodiments, the duration of each anneal operation (405 and 406) is approximately in the range of 30 seconds to 60 seconds for a single substrate apparatus or approximately in the range of 5 minutes to 20 minutes in a batch processing apparatus. Because deuterium in particular cannot readily diffuse through silicon nitride, limiting the first thickness of the first dielectric layer to less than 1.5 nm is particularly important to enable such short anneal durations. - In a further embodiment, the NH3 or ND3 atmosphere provided in
anneal operation 305 is at a higher temperature, higher pressure, or both higher temperature and higher pressure, than that employed in thedeposition operation 303. Similarly, the N2O atmosphere may be provided inanneal operation 306 at a higher temperature, higher pressure, or both higher temperature and higher pressure than that employed in theanneal operation 305. - In embodiments employing an ND3 anneal, deuterium is incorporated into the first thickness of first
dielectric material 403A to render adeuterated layer 404A, as depicted inFIG. 4C . Because the first thickness was limited to an annealable thickness (e.g. less than 1.5 nm), the level of deuterium incorporation may be much higher than for films which may have deuterium merely as a result of diffusion from an external source of deuterium, such as a subsequent deuterium anneal performed after a full SONOS stack is formed. - Following the anneal, as shown in
FIG. 4D , an annealable thickness of a seconddielectric material 403B is deposited on the first thickness of firstdielectric material 403A. The composition of the seconddielectric material 403B may be the same as that of firstdielectric material 403A to increase the thickness of the firstdielectric material 403A beyond that of the first iteration of deposition and anneal. In one such embodiment,deposition operation 303 ofFIG. 3 is repeated to deposit a second annealable thickness of oxygen-rich silicon oxynitride. This second annealable thickness may again be between approximately 1.0 nm and approximately 1.5 nm in preparation for an efficient anneal, just as for the first thickness of firstdielectric material 403A. In an alternate embodiment, the seconddielectric material 403B is deposited with a different stoichiometry than the firstdielectric material 403A to perform a stepwise grading of the dielectric material composition with each successive iteration of the deposition-anneal sequence. - A second iteration of the
anneal operation 304 may then be performed to anneal the seconddielectric material 403B. The second iteration may again include either or bothanneal operations anneal operation 304, deuterium is incorporated into the seconddielectric material 403B to render a seconddeuterated layer 404B, depicted inFIG. 4E . In such an embodiment, because of the stepwise, iterative nature of the deposition-anneal sequence, the deuterium concentration profile acrossdeuterated layers deuterated layers deuterated layers dielectric materials - After the second iteration of the
anneal operation 304, additional deposition-anneal iterations may be performed. In a particular embodiment, a third iteration may be performed to reach a cumulative thickness of oxygen-rich silicon oxynitride between approximately 2.5 nm and approximately 3.5 nm. - After a target thickness of anneal dielectric material is achieved, a thickness of a dielectric material which is not to be annealed may be deposited on the annealed layer(s). For example, as shown in
FIG. 4F , a silicon-rich oxynitride layer 407 is deposited on thedeuterated layer 404B. The silicon-rich oxynitride layer 407 may functionally serve as a charge trapping layer. In such embodiments, the silicon-rich oxynitride layer 407 provides a high density of charge traps by incorporating a greater amount of silicon than the oxygen-rich silicon oxynitride material annealed and/or deuterated. In a particular embodiment, the composition of the silicon-rich oxynitride results in the silicon-rich oxynitride layer 407 having an RI in the range of 1.9 and 2.1 and preferably about 2. In one such embodiment the silicon-rich oxynitride layer 407 has a thickness approximately in the range of 6-8 nm. - In an embodiment, the silicon-
rich oxynitride layer 407 is formed by introducing a process gas mixture including N2O, NH3 and SiH2Cl2, while maintaining the chamber at a pressure approximately in the range of 5-500 mTorr, and maintainingsubstrate 400 at a temperature approximately in the range of 700-850° C., for a period approximately in the range of 2.5-20 minutes in a batch furnace. The process gas mixture includes N2O and NH3 at a volumetric flow rate ratio from about 1:8 to about 1:4 (N2O:NH3) with SiH2Cl2 and NH3 at a volumetric flow rate ratio from about 3.5:1 to 6:1 (SiH2Cl2:NH3). In a preferred embodiment, the N2O and NH3 are provided at a volumetric flow rate ratio of about 1:5. (N2O:NH3) while the SiH2Cl2 and NH3 is at a volumetric flow rate ratio of about 4:1 (SiH2Cl2:NH3). In certain embodiments, the gases are introduced at a flow rate approximately in the range of 5 to 200 sccm. - Referring back to the embodiment depicted in
FIG. 3 , atoperation 308, a blocking layer of the of the non-volatile charge trap memory device is then formed to completedmethod 300. In accordance with the embodiment depicted inFIG. 4G , ablocking layer 408 is deposited over thecharge trapping layer 407. Generally, a blocking layer may be of a material and have a thickness selected to maintain a sufficient barrier to charge leakage while minimizing reductions gate electrode capacitance. Any conventional means of forming theblocking layer 408 may be employed, such as, but not limited to high temperature oxidation (HTO) processes. -
FIG. 4H illustrates a cross-sectional view of a SONOS non-volatile charge trap memory device, in accordance with an embodiment of the present invention. Upon fabrication of an ONO stack includingtunneling layer 402,charge trapping layer 404 and blockinglayer 408, a non-volatile charge trap memory device may be fabricated to include a patterned portion of the ONO stack.Charge trapping layer 404 further includes an annealed oxygen-richsilicon oxynitride layer 406 and non-annealed a silicon-richsilicon oxynitride layer 407. In the depicted embodiment, the oxygen-richsilicon oxynitride layer 406 has a higher deuterium concentration than that of the silicon-richsilicon oxynitride layer 407. In a further embodiment, the oxygen-richsilicon oxynitride layer 406 includes a substantially uniform deuterium concentration across the thickness of the annealed oxygen-richsilicon oxynitride layer 406. - The SONOS device includes a patterned portion of the ONO stack formed over a
substrate 400. Agate layer 409 is disposed on theblocking layer 408. The non-volatile charge trap memory device further includes source and drainregions 412 insubstrate 400 on either side of the ONO stack, defining achannel region 414 insubstrate 400 underneath the ONO stack. A pair ofdielectric spacers 410 isolates the sidewalls oftunneling layer 402,charge trapping layer 404, blockinglayer 408 andgate layer 409. -
Gate layer 409 may be composed of any conductor or semiconductor material suitable for accommodating a bias during operation of a SONOS-type transistor. In accordance with an embodiment of the present invention,gate layer 409 is formed by a chemical vapor deposition process and is composed of doped poly-crystalline silicon. In another embodiment,gate layer 409 is formed by physical vapor deposition and is composed of a metal-containing material which may include, but is not limited to, metal nitrides, metal carbides, metal silicides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt or nickel. - Source and
drain regions 412 may be any regions having opposite conductivity to channelregion 414. For example, in accordance with an embodiment of the present invention, source and drainregions 412 are N-type doped regions whilechannel region 414 is a P-type doped region. In one embodiment,substrate 400 and, hence,channel region 414, is composed of boron-doped single-crystal silicon having a boron concentration in the range of 1×1015-1×1019 atoms/cm3. Source anddrain regions 412 are composed of phosphorous- or arsenic-doped regions having a concentration of N-type dopants in the range of 5×1016-5×1019 atoms/cm3. In a specific embodiment, source and drainregions 412 have a depth insubstrate 400 in the range of 80-200 nanometers. In accordance with an alternative embodiment of the present invention, source and drainregions 412 are P-type doped regions whilechannel region 414 is an n-type doped region. - Thus, an iterative deposition-anneal sequence forming an annealed portion of a charge trapping layer in a non-volatile charge trap memory device has been disclosed. Although the present invention has been described in language specific to structural features or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are to be understood as particularly graceful implementations of the claimed invention in an effort to illustrate rather than limit the present invention.
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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Citations (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
US4490900A (en) * | 1982-01-29 | 1985-01-01 | Seeq Technology, Inc. | Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein |
US4870470A (en) * | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
US5464783A (en) * | 1993-03-24 | 1995-11-07 | At&T Corp. | Oxynitride-dioxide composite gate dielectric process for MOS manufacture |
US5937323A (en) * | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US5939333A (en) * | 1996-05-30 | 1999-08-17 | Micron Technology, Inc. | Silicon nitride deposition method |
US5972804A (en) * | 1997-08-05 | 1999-10-26 | Motorola, Inc. | Process for forming a semiconductor device |
US5972765A (en) * | 1997-07-16 | 1999-10-26 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
US6020606A (en) * | 1998-03-20 | 2000-02-01 | United Silicon Incorporated | Structure of a memory cell |
US6023093A (en) * | 1997-04-28 | 2000-02-08 | Lucent Technologies Inc. | Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof |
US6114734A (en) * | 1997-07-28 | 2000-09-05 | Texas Instruments Incorporated | Transistor structure incorporating a solid deuterium source for gate interface passivation |
US6140187A (en) * | 1998-12-02 | 2000-10-31 | Lucent Technologies Inc. | Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate |
US6147014A (en) * | 1996-01-16 | 2000-11-14 | The Board Of Trustees, University Of Illinois, Urbana | Forming of deuterium containing nitride spacers and fabrication of semiconductor devices |
US6150286A (en) * | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
US6162700A (en) * | 1997-11-11 | 2000-12-19 | Samsung Electronics Co., Ltd. | Method of forming a trench isolation structure in a semiconductor substrate |
US6218700B1 (en) * | 1997-10-29 | 2001-04-17 | Stmicroelectronics S.A. | Remanent memory device |
US6268299B1 (en) * | 2000-09-25 | 2001-07-31 | International Business Machines Corporation | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability |
US6297173B1 (en) * | 1997-08-05 | 2001-10-02 | Motorola, Inc. | Process for forming a semiconductor device |
US6335288B1 (en) * | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
US6348380B1 (en) * | 2000-08-25 | 2002-02-19 | Micron Technology, Inc. | Use of dilute steam ambient for improvement of flash devices |
US6399484B1 (en) * | 1998-10-26 | 2002-06-04 | Tokyo Electron Limited | Semiconductor device fabricating method and system for carrying out the same |
US6406960B1 (en) * | 1999-10-25 | 2002-06-18 | Advanced Micro Devices, Inc. | Process for fabricating an ONO structure having a silicon-rich silicon nitride layer |
US6445030B1 (en) * | 2001-01-30 | 2002-09-03 | Advanced Micro Devices, Inc. | Flash memory erase speed by fluorine implant or fluorination |
US6468927B1 (en) * | 2000-05-19 | 2002-10-22 | Applied Materials, Inc. | Method of depositing a nitrogen-doped FSG layer |
US6559026B1 (en) * | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US6586343B1 (en) * | 1999-07-09 | 2003-07-01 | Applied Materials, Inc. | Method and apparatus for directing constituents through a processing chamber |
US6602771B2 (en) * | 2000-12-27 | 2003-08-05 | Fujitsu Limited | Method for fabricating semiconductor device |
US6661065B2 (en) * | 2000-09-01 | 2003-12-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and SOI substrate |
US6670241B1 (en) * | 2002-04-22 | 2003-12-30 | Advanced Micro Devices, Inc. | Semiconductor memory with deuterated materials |
US6677213B1 (en) * | 2002-03-08 | 2004-01-13 | Cypress Semiconductor Corp. | SONOS structure including a deuterated oxide-silicon interface and method for making the same |
US6709928B1 (en) * | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
US6713127B2 (en) * | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
US6768160B1 (en) * | 2003-01-28 | 2004-07-27 | Advanced Micro Devices, Inc. | Non-volatile memory cell and method of programming for improved data retention |
US6906390B2 (en) * | 2000-10-26 | 2005-06-14 | Sony Corporation | Nonvolatile semiconductor storage and method for manufacturing the same |
US6913961B2 (en) * | 2003-06-30 | 2005-07-05 | Kwangju Institute Of Science And Technology | Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere |
US7012299B2 (en) * | 2003-09-23 | 2006-03-14 | Matrix Semiconductors, Inc. | Storage layer optimization of a nonvolatile memory device |
US20060160303A1 (en) * | 2005-01-20 | 2006-07-20 | Chartered Semiconductor Manufacturing Ltd | Method for forming high-K charge storage device |
US20060192248A1 (en) * | 2004-10-19 | 2006-08-31 | Macronix International Co., Ltd. | Memory Device and Method of Manufacturing Including Deuterated Oxynitride Charge Trapping Structure |
US7372113B2 (en) * | 2002-05-29 | 2008-05-13 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20080290399A1 (en) * | 2007-05-25 | 2008-11-27 | Cypress Semiconductor Corporation | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
US20090302365A1 (en) * | 2007-10-15 | 2009-12-10 | Arup Bhattacharyya | Nanocrystal Based Universal Memory Cells, And Memory Cells |
-
2008
- 2008-03-31 US US12/080,166 patent/US8088683B2/en active Active
Patent Citations (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
US4490900A (en) * | 1982-01-29 | 1985-01-01 | Seeq Technology, Inc. | Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein |
US4870470A (en) * | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
US5464783A (en) * | 1993-03-24 | 1995-11-07 | At&T Corp. | Oxynitride-dioxide composite gate dielectric process for MOS manufacture |
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
US6147014A (en) * | 1996-01-16 | 2000-11-14 | The Board Of Trustees, University Of Illinois, Urbana | Forming of deuterium containing nitride spacers and fabrication of semiconductor devices |
US5939333A (en) * | 1996-05-30 | 1999-08-17 | Micron Technology, Inc. | Silicon nitride deposition method |
US6023093A (en) * | 1997-04-28 | 2000-02-08 | Lucent Technologies Inc. | Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof |
US5937323A (en) * | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6217658B1 (en) * | 1997-06-03 | 2001-04-17 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing |
US5972765A (en) * | 1997-07-16 | 1999-10-26 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
US6114734A (en) * | 1997-07-28 | 2000-09-05 | Texas Instruments Incorporated | Transistor structure incorporating a solid deuterium source for gate interface passivation |
US5972804A (en) * | 1997-08-05 | 1999-10-26 | Motorola, Inc. | Process for forming a semiconductor device |
US6297173B1 (en) * | 1997-08-05 | 2001-10-02 | Motorola, Inc. | Process for forming a semiconductor device |
US6218700B1 (en) * | 1997-10-29 | 2001-04-17 | Stmicroelectronics S.A. | Remanent memory device |
US6162700A (en) * | 1997-11-11 | 2000-12-19 | Samsung Electronics Co., Ltd. | Method of forming a trench isolation structure in a semiconductor substrate |
US6020606A (en) * | 1998-03-20 | 2000-02-01 | United Silicon Incorporated | Structure of a memory cell |
US6399484B1 (en) * | 1998-10-26 | 2002-06-04 | Tokyo Electron Limited | Semiconductor device fabricating method and system for carrying out the same |
US6140187A (en) * | 1998-12-02 | 2000-10-31 | Lucent Technologies Inc. | Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate |
US6586343B1 (en) * | 1999-07-09 | 2003-07-01 | Applied Materials, Inc. | Method and apparatus for directing constituents through a processing chamber |
US6406960B1 (en) * | 1999-10-25 | 2002-06-18 | Advanced Micro Devices, Inc. | Process for fabricating an ONO structure having a silicon-rich silicon nitride layer |
US6150286A (en) * | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
US6468927B1 (en) * | 2000-05-19 | 2002-10-22 | Applied Materials, Inc. | Method of depositing a nitrogen-doped FSG layer |
US6559026B1 (en) * | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US6335288B1 (en) * | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
US6348380B1 (en) * | 2000-08-25 | 2002-02-19 | Micron Technology, Inc. | Use of dilute steam ambient for improvement of flash devices |
US6661065B2 (en) * | 2000-09-01 | 2003-12-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and SOI substrate |
US6268299B1 (en) * | 2000-09-25 | 2001-07-31 | International Business Machines Corporation | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability |
US6906390B2 (en) * | 2000-10-26 | 2005-06-14 | Sony Corporation | Nonvolatile semiconductor storage and method for manufacturing the same |
US6602771B2 (en) * | 2000-12-27 | 2003-08-05 | Fujitsu Limited | Method for fabricating semiconductor device |
US6445030B1 (en) * | 2001-01-30 | 2002-09-03 | Advanced Micro Devices, Inc. | Flash memory erase speed by fluorine implant or fluorination |
US6709928B1 (en) * | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
US6818558B1 (en) * | 2001-07-31 | 2004-11-16 | Cypress Semiconductor Corporation | Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices |
US6713127B2 (en) * | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
US7042054B1 (en) * | 2002-03-08 | 2006-05-09 | Cypress Semiconductor Corp. | SONOS structure including a deuterated oxide-silicon interface and method for making the same |
US6677213B1 (en) * | 2002-03-08 | 2004-01-13 | Cypress Semiconductor Corp. | SONOS structure including a deuterated oxide-silicon interface and method for making the same |
US6884681B1 (en) * | 2002-04-22 | 2005-04-26 | Fasl Llc | Method of manufacturing a semiconductor memory with deuterated materials |
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US6768160B1 (en) * | 2003-01-28 | 2004-07-27 | Advanced Micro Devices, Inc. | Non-volatile memory cell and method of programming for improved data retention |
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US7012299B2 (en) * | 2003-09-23 | 2006-03-14 | Matrix Semiconductors, Inc. | Storage layer optimization of a nonvolatile memory device |
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