US20090231822A1 - Device, in particular intelligent power module with planar connection - Google Patents

Device, in particular intelligent power module with planar connection Download PDF

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Publication number
US20090231822A1
US20090231822A1 US11/568,058 US56805805A US2009231822A1 US 20090231822 A1 US20090231822 A1 US 20090231822A1 US 56805805 A US56805805 A US 56805805A US 2009231822 A1 US2009231822 A1 US 2009231822A1
Authority
US
United States
Prior art keywords
substrate
layer
power component
control circuit
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/568,058
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English (en)
Inventor
Markus Fruhauf
Carsten Rebbereh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Assigned to SIEMENS AKTIENGESELLSCHAFT reassignment SIEMENS AKTIENGESELLSCHAFT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: REBBEREH, CARSTEN, FRUHAUF, MARKUS
Publication of US20090231822A1 publication Critical patent/US20090231822A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Definitions

  • converters in conventional technology with a power semiconductor module capacitors and components for electrical separation for activation and signal recording are put on a circuit board, in particular a printed circuit board (PCB), which is then painted with an insulating varnish to attain the compactness.
  • PCB printed circuit board
  • IPM intelligent power module
  • the power semiconductors are constructed in a module, and in this the drive circuit is then further mounted, constructed in FR4 or ceramic.
  • the contacting is normally by means of bonding.
  • everything is then potted with a silicone gel.
  • the invention is based on the object of implementing intelligent power modules that can be manufactured more cheaply and more compactly.
  • a device in particular an intelligent power module, has a substrate, on which a power component and a control circuit for controlling this power component are disposed.
  • the device further has a connection between the power component and the control circuit, this containing a layer of electrically insulating material, which is disposed on the power component and the substrate, and a layer of electrically conductive material, which is disposed on the layer of electrically insulating material.
  • the advantage is thus derived that the power component and its control circuit can be disposed on the same substrate, giving a compact and cheaply manufactured power module that can be effectively cooled.
  • the substrate which is a structured ceramic with copper surfaces, very high currents and voltages can be switched with the power module with the associated power dissipations.
  • the layer of electrically insulating material is advantageously a film, in particular a laminated film.
  • the power component On the side facing away from the substrate the power component can have a contact area, on which the layer of electrically insulating material has a window and the layer of electrically conductive material is disposed.
  • the layer of electrically insulating material is advantageously on the power component, i.e. in particular its sides not disposed on the substrate, and on the substrate. This makes the device especially stable.
  • the layer of electrically insulating material serves here as the substrate for the layer of electrically conductive material.
  • the control circuit preferably has a microprocessor, for example in the form of a microcontroller and/or logic chip.
  • control circuit advantageously has means of current metering.
  • control circuit has a transforming coupling, for coupling a control signal for the power component.
  • the transforming coupling can be implemented, in particular as coreless, with two conductors running parallel, separated from each other by an insulator.
  • the insulator is executed in the form of an insulating layer.
  • This insulating layer can be provided for example by a film, laminated in particular, which is disposed between two electrically conductive layers for the transforming transmission, these being generated e.g. by electroplating.
  • the transforming coupling can thus be manufactured in the same manner as the connection of the component, which means that its manufacture can be integrated excellently into the manufacturing process for the power module.
  • the control circuit preferably has a short-circuit protection, an excess temperature protection and/or an excess voltage protection.
  • the device can in particular also have a switched-mode mains power supply, in order to generate DC voltage, which is converted to AC voltage with the help of the power component.
  • a transistor of this switched-mode mains power supply can also be disposed on the substrate, so that this can be cooled and connected in the same way as the power component.
  • FIGURE shows a power component with planar connection.
  • a device 1 Shown in the FIGURE is a device 1 , in particular an intelligent power module 1 , which is constructed without bonding process and silicone potting.
  • power components 3 e.g. IGBTs
  • power components 4 e.g. diodes
  • control circuit for the power components, containing electronic equipment 5 , for example a microprocessor, and means 6 for current measurement, for example a shunt with driver including potential separation.
  • the substrate 2 is a copper-surface structured ceramic.
  • the potential separation to the signal transmission is effected in a preferred manner with component parts, with the potential separation realized with oxide films. This offers the advantage of being able to continue working permanently even at high temperatures, which is a fundamental requirement from the compactness.
  • the insulation and connection of the individual components is effected by putting on several electrically insulating and electrically conductive layers in the form of special film, and sputtered copper which is without external current and/or electrically deposited. Concerning the manufacture and properties of these layers, the full content of WO 03/030247 A2 is referenced. A layout of the structure emerges, which is comparable to a multilayered circuit board, which connects together the individual potentials.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Combinations Of Printed Boards (AREA)
  • Inverter Devices (AREA)
US11/568,058 2004-04-19 2005-04-14 Device, in particular intelligent power module with planar connection Abandoned US20090231822A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004019447A DE102004019447A1 (de) 2004-04-19 2004-04-19 Vorrichtung, insbesondere intelligentes Leistungsmodul, mit planarer Verbindungstechnik
DE102004019447.5 2004-04-19
PCT/EP2005/051645 WO2005101503A2 (fr) 2004-04-19 2005-04-14 Dispositif, en particulier module d'energie intelligent comprenant une connexion planaire

Publications (1)

Publication Number Publication Date
US20090231822A1 true US20090231822A1 (en) 2009-09-17

Family

ID=34964929

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/568,058 Abandoned US20090231822A1 (en) 2004-04-19 2005-04-14 Device, in particular intelligent power module with planar connection

Country Status (3)

Country Link
US (1) US20090231822A1 (fr)
DE (1) DE102004019447A1 (fr)
WO (1) WO2005101503A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011080153A1 (de) 2011-07-29 2013-01-31 Infineon Technologies Ag Flexible verbindung von substraten in leistungshalbleitermodulen

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008035993B4 (de) * 2008-08-01 2018-10-11 Infineon Technologies Ag Leistungshalbleitermodul
DE102010002138A1 (de) * 2010-02-19 2011-08-25 Robert Bosch GmbH, 70469 Substratanordnung für ein elektronisches Steuergerät einer Kraftfahrzeugkomponente

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959357A (en) * 1998-02-17 1999-09-28 General Electric Company Fet array for operation at different power levels
US6025995A (en) * 1997-11-05 2000-02-15 Ericsson Inc. Integrated circuit module and method
US6239980B1 (en) * 1998-08-31 2001-05-29 General Electric Company Multimodule interconnect structure and process
US6359331B1 (en) * 1997-12-23 2002-03-19 Ford Global Technologies, Inc. High power switching module
US20060103005A1 (en) * 2002-06-20 2006-05-18 Jurgen Schulz-Harder Metal-ceramic substrate for electric circuits or modules, method for producing one such substrate and module comprising one such substrate
US7482861B1 (en) * 1997-12-09 2009-01-27 Hitachi, Ltd. Semiconductor integrated circuit device, and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656416B2 (ja) * 1991-12-16 1997-09-24 三菱電機株式会社 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法
ATE268050T1 (de) * 1998-02-05 2004-06-15 Univ City Hong Kong Betriebstechniken für kernlose pcb- transformatoren
AU2002340750A1 (en) * 2001-09-28 2003-04-14 Siemens Aktiengesellschaft Method for contacting electrical contact surfaces of a substrate and device consisting of a substrate having electrical contact surfaces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025995A (en) * 1997-11-05 2000-02-15 Ericsson Inc. Integrated circuit module and method
US7482861B1 (en) * 1997-12-09 2009-01-27 Hitachi, Ltd. Semiconductor integrated circuit device, and method of manufacturing the same
US6359331B1 (en) * 1997-12-23 2002-03-19 Ford Global Technologies, Inc. High power switching module
US5959357A (en) * 1998-02-17 1999-09-28 General Electric Company Fet array for operation at different power levels
US6239980B1 (en) * 1998-08-31 2001-05-29 General Electric Company Multimodule interconnect structure and process
US20060103005A1 (en) * 2002-06-20 2006-05-18 Jurgen Schulz-Harder Metal-ceramic substrate for electric circuits or modules, method for producing one such substrate and module comprising one such substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011080153A1 (de) 2011-07-29 2013-01-31 Infineon Technologies Ag Flexible verbindung von substraten in leistungshalbleitermodulen

Also Published As

Publication number Publication date
WO2005101503A3 (fr) 2006-02-23
DE102004019447A1 (de) 2005-11-10
WO2005101503A2 (fr) 2005-10-27

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Owner name: SIEMENS AKTIENGESELLSCHAFT, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FRUHAUF, MARKUS;REBBEREH, CARSTEN;REEL/FRAME:018406/0701;SIGNING DATES FROM 20060816 TO 20060821

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION