US20090127673A1 - Method for producing semi-conducting devices and devices obtained with this method - Google Patents
Method for producing semi-conducting devices and devices obtained with this method Download PDFInfo
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- US20090127673A1 US20090127673A1 US12/361,020 US36102009A US2009127673A1 US 20090127673 A1 US20090127673 A1 US 20090127673A1 US 36102009 A US36102009 A US 36102009A US 2009127673 A1 US2009127673 A1 US 2009127673A1
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- 238000000034 method Methods 0.000 title description 9
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 238000011109 contamination Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 15
- 238000011282 treatment Methods 0.000 claims description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 18
- 229910052796 boron Inorganic materials 0.000 description 18
- 239000000758 substrate Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000012864 cross contamination Methods 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Definitions
- Amorphous or microcrystalline silicon solar cells are made of multilayer systems where semiconducting material with certain electronical and physical properties is deposited, layer by layer, on a substrate.
Abstract
A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
Description
- The present invention relates in general to the domain of semiconductor films based on silicon technology. It concerns, more particularly, a method for producing silicon junctions, doped or not, which can be used, for example, in solar cells. It also concerns any other semi-conducting devices obtained by such a method.
- Amorphous or microcrystalline silicon solar cells are made of multilayer systems where semiconducting material with certain electronical and physical properties is deposited, layer by layer, on a substrate.
- The n-layers and p-layers are doped with other elements to achieve desired properties, such as electrical conductivity. More precisely:
-
- p-doped layers have a surplus of positive charge carriers,
- n-doped layers have a surplus of negative charge carriers, and
- i layers are intrinsic.
- Generally, boron is used as the doping agent of the p-layers and phosphor as the doping agent of the n-layers.
- Silicon solar cells manufacturers use either single-chamber or multi-chamber reactors to produce commercial photovoltaic (PV) modules. Plasma deposition of silicon solar cells in a single-chamber reactor leads to considerable simplifications and reduced costs as compared to multi-chamber processes.
- However, in a single chamber deposition process of a p-i-n solar cell, for example, the subsequent deposition of the i-layer on the p-layer may cause boron recycling from the reactor walls and from the deposited p-layer. As a result, boron will contaminate the i-layer at the critical p-i interface and thereby weaken the strength of the electrical field in the i-layer close to p-i interface. This provokes a less efficient carrier separation just in this zone and leads to a reduced collection efficiency in the solar cell and thereby to a deterioration of the cell performance.
- For that reason, most silicon p-i-n solar cells modules are, at present, deposited using multi-chamber reactors. Boron cross-contamination by recycling is avoided by simply depositing the p-layer and the i-layer in different chambers. However, the higher investment in multi-chamber systems equipment becomes a drawback particularly in the field of solar cells where costs are a major issue.
- Similar problems exist with n-i-p solar cells in which phosphor used to dope the n-layer contaminates the i-layer at the critical n-i interface.
- Thus, an interesting solution would be to combine a low cost-single chamber reactor with a process scheme able to suppress the boron or phosphor cross-contamination.
- Different treatments have been tested with encouraging results, but they still leave open the question of the light-induced degradation of these solar cells, they use expensive gases, they have long treatment durations or are incompatible with large area deposition in industrial reactors.
- The object of the present invention is to provide a method for producing semiconductors with a particular application in solar cells, avoiding cross-contamination by doping agents and exempt of disadvantages above mentioned.
- More precisely, in order to achieve these goals, the invention concerns a method for producing a semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer in a single reaction chamber. The deposition steps of said layers are separated by an operation for avoiding the contamination by the doping agent of said another layer.
- Advantageously, the operation comprises a dosing of the reaction chamber with a compound able to react with the doping agent.
- According to a first embodiment, the contamination avoiding operation comprises a dosing of the reaction chamber with a vapour or gas comprising water, methanol, isopropanol or another alcohol.
- According to a second embodiment, the contamination avoiding operation comprises a dosing of the react-on chamber with a vapour or gas comprising ammonia, hydrazine or volatile organic amines.
- The invention also concerns a semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer. The interface between said layers contains traces of oxygen or of nitrogen as a result of a treatment for avoiding the contamination of said another layer by the doping agent.
- Other characteristics of the invention will be shown in the description below, made with regard to the attached drawing, where:
-
FIG. 1 shows the reactor used for the implementation of the method, and -
FIG. 2 illustrates the effect of the doping agent contamination avoiding operation. - The following description is particularly related, as an example, to the production of a boron doped p-i-n junction, i.e. a semiconductor device comprising respective p, 1 and n layers successively deposited on a suitable substrate providing the base of a solar cell.
- The three layers are deposited in a manner well known by a person skilled in the art but, according to the invention, the method comprises an important supplementary step.
-
FIG. 1 shows the reactor used to produce such a semi-conducting device. Basically, it comprises: -
- a
vacuum chamber 10 connected to avacuum circuit 11, - a hot wall
inner chamber 12 disposed inside thevacuum chamber 10, - a radio-frequency-powered
electrode 13 placed inside theinner chamber 12, and - a
showerhead 14 incorporated within theelectrode 13 and connected to different gas feeding lines to introduce appropriate reacting products.
- a
- A
substrate 15, for example a glass/TCO substrate of the type Asahi U, based on SnO2:F (glass coated with fluorine doped SnO2), is being arranged in theinner chamber 12. - The above described installation is preferably adapted from the industrial KAI™-S reactor of Unaxis Displays in order to constitute a Plasma Enhanced Chemical Vapour Deposition (PECVD) system. The typical dimensions of the
inner chamber 12 are 50 cm width×60 cm length×2.5 cm height. - For the initial p-layer deposition on
substrate 15, the reacting gas introduced in the reactor through theshowerhead 14 are, typically: -
- to form the p-layer: silane, methane and hydrogen, and
- to dope the layer with boron: trimethylboron (TMB).
- TMB is particularly well suited, instead of diborane (commonly used) because it has a superior thermal stability in the hot reactor and is reported to cause less contamination.
- To perform the deposition of the p-layer, the plasma excitation frequency used is e.g. 40.68 MHz, the temperature is 200° C., while the pressure is kept at 0.3 mbar, and the power RF is applied at a level of 60 W.
- Many experiments have suggested that boron introduced in the reactor is not simply present in a gaseous state which could be easily pumped out, but might be physisorbed on the internal reactor surfaces and desorb very slowly after a pumping period.
- Therefore, according to a first embodiment of the invention, after the deposition of the p-layer and before the deposition of the i-layer, the internal surfaces of the reactor and the substrate also are dosed with a vapour or a gas comprising water, methanol or isopropanol or another alcohol.
- More precisely, in this example, the dosing product is stored in a
separate bottle 21 connected, via avalve 22, to thevacuum chamber 10, which is kept at low pressure condition. When thevalve 22 is opened, the dosing product starts boiling in thebottle 21 because of the low pressure inside and vapour flushes into thechamber 10. Of-course, theRF electrode 13 is off. The operation is performed between 100 and 350° C., typically at 200° C. and during less than 10 minutes, typically 2 minutes and at 0.05 to 100 mbar. The flow of water vapour has to be sufficient. For example, 90 mbar·sec is a good value. If methanol or isopropanol is used, the flow is generally higher. - After the dosing operation, a short pumping period of less than 5 minutes, typically around 3 minutes, under similar conditions but without any dosing gas addition, is advantageously respected before the deposition of the i-layer.
- As a result of the above dosing operation, the boron which was physisorbed on all the internal surfaces of the reactor and of the substrate is transformed into stable chemical compounds unable to desorb. A contamination of the layer which will be later deposited on the p-layer is thus avoided.
- After this treatment, the i-layer, then the n-layer are deposited in the same reactor. The conditions described above for the p-layer deposition are reused with appropriate reacting gases, as known by a person skilled in the art.
- As an example, the reacting gases used for the deposition of the i-layer are a mix of 75% of silane and 25% of hydrogen, whereas the reacting gases used for the deposition of the n-layer are silane, hydrogen and phosphine.
- The evaluation of the base level boron contamination of the i-layers can be made by Secondary Ion Mass Spectroscopy (SIMS) in order to trace the boron concentration depth profile across the p-i interface.
- To illustrate the efficiency of the above-described dosing treatment,
FIG. 2 shows, as an example, the boron SIMS profile (depth X from surface in Angstroms versus boron concentration Y in atoms·cm−3) of a p-i-p-i sandwich structure deposited on a c-Si wafer. Both p-dopedportions - A first i-
layer 19 is deposited on the p-layer 17 without performing any additional treatment. The base level contamination of boron measured in the i-layer 19 is about 1018 atoms·cm−3. - A second i-
layer 20 is deposited on the p-layer 18 portion after the dosing treatment as described above. The base level contamination of boron measured in the i-layer 20 is reduced to about 1017 atoms·cm−3, which represents an improvement of one order of magnitude. - The boron contamination in the i-layer of a solar p-i-n cell treated according to the invention can also be indirectly detected by performing voltage dependent quantum efficiencies measurements as well as monitoring the global cell performance especially the fill factor of the solar cell. The results are substantially the same as those obtained with cells deposited in multi-chamber reactors.
- Furthermore, an oxygen peak can be observed with a SIMS analysis at the treated p-i interface, meaning that the above described treatment has been used. Typically, the amount of oxygen in the peak is higher than 1019 atoms·cm3.
- According to a second embodiment of the invention, after the deposition of the p-layer and before the deposition of the i-layer, the internal surfaces of the reactor are dosed with a vapour or gas comprising ammonia, hydrazine or volatile organic amines. This dosing operation is performed at low pressure conditions (0.05 to 100 mbar), between 100 and 350° C., typically at around 200° C. and during less than 10 minutes, typically around to 2 minutes. The flow of gas has to be sufficient. For example, 90 mbar·sec is a good value for ammonia. After the dosing operation, a short pumping period of less than 5 minutes is also respected before the deposition of the i-layer.
- A nitrogen peak can be observed with a SIMS analysis at the treated n-i interface, meaning that such a treatment has been used. Typically, the amount of nitrogen is higher than 1019 atoms·cm−3.
- For both embodiments of the invention, it may be useful to depose on the p-layer, after the above described treatments, a hydrogen-diluted buffer layer. This layer is obtained by PECVD of a mix of 10% silane and 90% hydrogen. The plasma excitation frequency used is 40.68 MHz, the temperature is 200° C., while the pressure is kept at 0.5 mbar, and the power RF is applied at a level of 60 W. Such a layer alone has usually already a beneficial effect on the boron cross contamination in the i-layer.
- The method of the invention, according to both described embodiments, offers the advantage to eliminate the boron contamination while working with a single reactor. There is neither wasted pumping time nor loss of time due to transfer of the substrate out of the reactor for a cleaning step nor loss of time for reheating of the substrate which cooled down during the transfer. Moreover, apart from simpler and faster processes the single chamber approach bears the potential of considerably simplified deposition systems as compared to multi-chamber systems. It has to be noted that such methods allow to produce a complete solar cell in only 30 minutes.
- A person skilled in the art can easily adapt the above described treatments to a n-i-p solar cell in order to avoid phosphor cross-contamination after the deposition of n-doped layer.
- Needless to say that the invention can also be applied to a any junction based on a p-doped or n-doped layer. The dosing can also be performed by injecting the dosing compound directly in the gas feeding line.
Claims (21)
1. A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of oxygen as a result of a treatment for avoiding the contamination of said another layer by the doping agent.
2. The semi-conducting device of claim 1 , wherein the content of oxygen is higher than 1019 atoms·cm−3.
3. A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of nitrogen as a result of a treatment for avoiding the contamination of said another layer by the doping agent.
4. The semi-conducting device of claim 3 , wherein the content of nitrogen is higher than 1019 atoms·cm−3.
5. The semi-conducting device of claim 1 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising water, methanol, isopropanol or another alcohol without plasma.
6. The semi-conducting device of claim 3 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising ammonia, hydrazine or volatile organic amines without plasma.
7. The semi-conducting device of claim 5 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes.
8. The semi-conducting device of claim 6 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes.
9. The semi-conducting device of claim 1 , wherein the doped layer is a p-doped layer.
10. The semi-conducting device of claim 1 , wherein the doped layer is a n-doped layer.
11. The semi-conducting device of claim 3 , wherein the doped layer is a p-doped layer.
12. The semi-conducting device of claim 3 , wherein the doped layer is a n-doped layer.
13. The semi-conducting device of claim 1 , further comprising a buffer layer intermediate said doped layer and said other layer.
14. The semi-conducting device of claim 3 , further comprising a buffer layer intermediate said doped layer and said other layer.
15. The semi-conducting device of claim 5 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer.
16. The semi-conducting device of claim 6 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer.
17. The semi-conducting device of claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes.
18. The semi-conducting device of claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes.
19. The semi-conducting device of claim 1 , said doped layer being a plasma-deposited doped layer.
20. The semi-conducting device of claim 3 , said doped layer being a plasma-deposited doped layer.
21. The semi-conducting device of claim 6 , wherein said doping agent comprises trimethylboron.
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US10/691,102 US7344909B2 (en) | 2002-10-25 | 2003-10-22 | Method for producing semi-conducting devices and devices obtained with this method |
US11/947,245 US7504279B2 (en) | 2002-10-25 | 2007-11-29 | Method for producing semi-conducting devices and devices obtained with this method |
US12/361,020 US20090127673A1 (en) | 2002-10-25 | 2009-01-28 | Method for producing semi-conducting devices and devices obtained with this method |
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EP (1) | EP1554413B1 (en) |
JP (1) | JP4733519B2 (en) |
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KR101046520B1 (en) | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Source gas flow path control in pecvd system to control a by-product film deposition on inside chamber |
WO2010020544A1 (en) * | 2008-08-19 | 2010-02-25 | Oerlikon Solar Ip Ag, Truebbach | Improvement of electrical and optical properties of silicon solar cells |
US8652871B2 (en) * | 2008-08-29 | 2014-02-18 | Tel Solar Ag | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance |
DE102009051347A1 (en) * | 2009-10-30 | 2011-05-12 | Sunfilm Ag | Process for producing semiconductor layers |
CN102656707B (en) | 2009-12-22 | 2015-04-01 | 东电电子太阳能股份公司 | Thin-film silicon tandem solar cell and method for manufacturing the same |
DE102010013039A1 (en) * | 2010-03-26 | 2011-09-29 | Sunfilm Ag | Method for manufacture of photovoltaic cell, involves forming intrinsic layer between two conductive layers of different conductance, and separating one of conductive layers and one portion of intrinsic layer in separation chamber |
CN103262263A (en) | 2010-09-03 | 2013-08-21 | 东电电子太阳能股份公司 | Method for thin film silicon photovoltaic cell production |
US8927857B2 (en) | 2011-02-28 | 2015-01-06 | International Business Machines Corporation | Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices |
US8628999B2 (en) * | 2012-02-28 | 2014-01-14 | International Business Machines Corporation | Solar cell made in a single processing chamber |
JP2013191770A (en) * | 2012-03-14 | 2013-09-26 | Tokyo Electron Ltd | Method for stabilizing film formation device and film formation device |
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Also Published As
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US7504279B2 (en) | 2009-03-17 |
US20080076237A1 (en) | 2008-03-27 |
WO2004038774A3 (en) | 2004-09-10 |
KR20050060097A (en) | 2005-06-21 |
US20040135221A1 (en) | 2004-07-15 |
JP2006504283A (en) | 2006-02-02 |
JP4733519B2 (en) | 2011-07-27 |
EP1554413B1 (en) | 2013-07-24 |
WO2004038774A2 (en) | 2004-05-06 |
US7344909B2 (en) | 2008-03-18 |
AU2003269667A8 (en) | 2004-05-13 |
EP1554413A2 (en) | 2005-07-20 |
KR101015161B1 (en) | 2011-02-16 |
AU2003269667A1 (en) | 2004-05-13 |
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