CN103262263A - Method for thin film silicon photovoltaic cell production - Google Patents

Method for thin film silicon photovoltaic cell production Download PDF

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Publication number
CN103262263A
CN103262263A CN2011800531202A CN201180053120A CN103262263A CN 103262263 A CN103262263 A CN 103262263A CN 2011800531202 A CN2011800531202 A CN 2011800531202A CN 201180053120 A CN201180053120 A CN 201180053120A CN 103262263 A CN103262263 A CN 103262263A
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layer
battery
flow
slm
deposit
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H.戈德巴赫
T.罗舍克
R.克拉维茨
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TEL Solar AG
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Oerlikon Solar AG
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Abstract

This invention relates to a solar cell arrangement and to a process for manufacturing thin film silicon-based solar cells. It particular addresses the topic of reducing the active layer thicknesses significantly by advanced light trapping. The invention proposes a solar cell arrangement with an extent > 1.4 m2 in tandem configuration comprising an a-Si Cell (4) and a [mu]c-Si cell (10), the absorber layer of the a-Si cell (4) having a thickness of 210nm +- 20 nm, the absorber layer of the [mu]c-Si cell (10) having a thickness of 900 nm +- 200 nm.

Description

Silicon serial connection solar cell and manufacture method thereof
Technical field
The present invention relates to a kind of technology of making the thin film silicon based solar battery.The present invention has solved the problem that significantly reduces active layer thickness by senior sunken light especially.
Background technology
The photovoltaic solar conversion has represented the prospect that eco-friendly generating means are provided.Yet at this stage, the electric power that the electric energy that the photovoltaic energy converting unit provides provides than traditional power station is still quite expensive.Therefore, the effective means of more cost of Development and Production photovoltaic energy converting unit obtain paying close attention in recent years.In the distinct methods of producing the low-cost solar battery, thin film silicon solar cell has made up some favourable aspects: at first, therefore thin film silicon solar cell can prepare by the known thin film deposition technology such as plasma reinforced chemical vapor deposition (PECVD), and has represented by using the past to reduce the collaborative prospect of manufacturing cost in the experience that for example obtains such as the field of other thin film deposition technology of display sector.Secondly, thin film silicon solar cell can realize making every effort to 10% or higher high-energy conversion efficiency.The 3rd, the main raw material(s) of production thin film silicon based solar battery is that enrich and nontoxic.
Thin-film solar cells generally includes first electrode, one or more semiconductive thin film p-i-n or n-i-p knot and second electrode that is stacked on continuously on the substrate.Fig. 1 shows tandem junction silicon film solar batteries as known in the art.Such thin-film solar cells 50 generally includes first on the substrate 41 or preceding electrode 42, one or more semiconductive thin film p-i-n knot (52-54,51,44-46,43) and second or rear electrode 47.Each p-i-n knot 51,43 or film photoelectric converting unit comprise p- type layer 52,44 and n type layer 54,46(p type=just mix, the n type=negative doping of being clipped in) between the i type layer 53,45 of intrinsic basically." intrinsic basically " under this background is understood that not to be doped or presents does not have synthesizing blender basically.Opto-electronic conversion is mainly carried out in this i type layer; Therefore it also is called as " absorber layers ".
Crystalline fraction (degree of crystallinity) according to i type layer 53,45, the feature of solar cell or photoelectricity (conversion) device is described to amorphous (a-Si, 53) or crystallite (μ c-Si, 45) solar cell, and irrelevant with the kind of the degree of crystallinity of adjacent p and n layer.As common in this area, " crystallite " layer is understood to be in the layer of the crystalline silicon (so-called microcrystal) that comprises suitable vast scale in the [amorphous.Piling up of p-i-n knot is called as tandem junction or three junction photovoltaic batteries.As shown in fig. 1, combination amorphous and crystallite p-i-n knot also is called as " non-crystallite lamination (micromorph) serial connection battery ".Fig. 1 shows the tandem junction thin film silicon photovoltaic cell of prior art.Thickness is non-to be drawn to scale.
Defective in the technology
Although use low thickness, the thickness of each layer (particularly i layer) remains one of prime cost factor of thin film silicon solar cell.For example, for non-crystallite lamination serial connection battery, crystallite (μ c) bottom battery usually 1.5 μ m or even bigger scope in.This thickness influence in following multiple mode thin-film solar cells the producer have a cost:
High thickness need be used for deposit self and both silicon deposit systems of plasma clean subsequently (for example, process lasting time of length PECVD).Because this production system is mainly investment normally, so be to having the main contribution of cost process time.
In addition, the gas that is used for deposit and cleaning also is big cost contribution, particularly silane SiH 4With F source gas (as NF 3, SF 6, F 2).In the time that layer thickness can be reduced, can reduce all of these factors taken together widely.
Summary of the invention
The object of the present invention is to provide the high performance solar cells with the layer thickness that reduces.
This purpose realizes by the manufacture method according to the solar battery apparatus of claim 1 and such solar battery apparatus according to Claim 8.Additional embodiments of the present invention has been described in the dependent claims.
The present invention involves a kind of range (extent)〉1.4 m 2The solar battery apparatus of concatenated configuration, it comprises a-Si battery and μ c-Si battery, the absorber layers of a-Si battery has the thickness of 210nm ± 20nm, the absorber layers of μ c-Si battery has the thickness of 900nm ± 200nm.
The key criterion that has the high-performance module of the layer thickness that reduces for realization has two.One is the high uniformity of whole layer on glass, because under the low thickness of layer, the electric current that photovoltaic generates becomes many sensitively to varied in thickness, and battery is more away from saturation current.Like this, the minor swing of thickness may cause the big variation of electric current, and electric current restriction may cause the whole efficiency that reduces.This is shown in (carrying out emulation at a-Si) Fig. 2.
Another standard is well to fall into the realization of light (light trapping)." fall into light " and mean that solar cell utilizes the ability of incident light.The measure that improve to fall into the light behavior is any step that antireflecting coating, veining or the coarse tco layer of former growth and for example being used for of taking in addition in absorber layers the active path of light is extended.Usually, optimum layer thickness is determined by two factors, namely falls into light and layer quality.
Under the situation with good sunken light, can under lower thickness, realize sizable absorption of light.The restriction of quality of materials makes can not extract the electric charge carrier that generates under higher thickness, because electric charge carrier is just compound before they arrive electrode layer.Fig. 3 illustrates improved sunken light how to make the efficiency optimization value shift to lower thickness (equally carrying out emulation at a-Si).
Although above illustrate at a-Si, for for example as shown in fig. 1 the tandem junction solar cell of non-crystallite lamination-type, main effect is identical.
Using the deposition tool TCO1200 that makes as the Oerlikon Solar company of Switzerland Tr ü bbach and the high uniformity deposition apparatus of KAI1200 to produce high performance plant-scale big solar energy module with thin layer now.For the sunken light of optimum, the combinatorial optimization of before must making and back contact site.Introduced extra improved rear reflector (white paper tinsel).Diffuse back reflector during this white paper tinsel replacement whitewash piles up as thin-film solar cells: referring to Fig. 4.
Like this, under the situation of the stabilization efficiency of not losing the bottom battery place, can realize thickness: referring to Fig. 5.
In the variation according to solar battery apparatus of the present invention that can be combined with any variation that will propose under reconcilable situation, absorber layers has ± 5% homogeney.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, solar battery apparatus according to the present invention comprises preferably the transparent conductive oxide layer by the ZnO LPCVD deposit, that have 25% mist degree.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, solar battery apparatus according to the present invention comprise homogeney with mist degree of 10% and preferably by the LPCVD deposit, as the transparent conductive oxide layer of the ZnO of rear electrode.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, solar battery apparatus according to the present invention comprise polyethylene butyraldehyde preferably, as the white paper tinsel of rear reflector, the thickness that it preferably is equipped with white reflection grain and preferably has 0.5 mm.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, solar battery apparatus according to the present invention has the photic decline less than 10%.
Can be in a variation according to solar battery apparatus of the present invention that any variation that maybe will propose that has proposed is combined under reconcilable situation, the a-Si battery comprises the silicon p layer of 10 nm, the a-Si:H absorber layers of 210 nm, the n layer of 30 nm, and μ c-Si battery comprises the p layer of 24 nm, the μ c-Si:H absorber layers of 900 nm and the n layer of 36 nm.
The invention further relates to a kind of range〉1.4 m 2The manufacture method of solar battery apparatus of concatenated configuration, this solar battery apparatus comprises a-Si battery and μ c-Si battery, the absorber layers of a-Si battery has the thickness of 210nm ± 20nm, and the absorber layers of μ c-Si battery has the thickness of 900nm ± 200nm, and this method comprises:
Absorber layers with following deposition parameters PECVD deposit a-Si battery:
The flow of SiH4: 10.4 slm
The flow of H2: 10.4 slm
Deposition rate: 3.35/s
Deposition time: 634 s
Pressure: 0.5 mbar
Temperature: 200 ℃
Power: 380 W, and
Absorber layers with following deposition parameters PECVD deposit μ c-Si battery:
The flow of SiH4: 7.7 slm
The flow of H2: 170 slm
Deposition rate: 5/s
Deposition time: 1830 s
Pressure: 2.5 mbar
Temperature: 160 ℃
Power: 3500 W.
Can be in the variation of the method according to this invention that any variation that will propose is combined under reconcilable situation, this device further comprises the transparent conductive oxide layer of the ZnO with mist degree of 25%, and comprises with following deposition parameters LPCVD deposit ZnO layer:
Temperature: 180 ℃
The flow of H2: 577 sccm
The flow of B2H6: 400 sccm
The flow of H2O: 2460 sccm
The flow of DEZ: 2200 sccm
Pressure: 0.5 mbar.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, the method according to this invention, the a-Si battery comprises the silicon p layer of 10 nm, the a-Si:H absorber layers of 210 nm, the n layer of 30 nm, μ c-Si battery comprises the p layer of 24 nm, the μ c-Si:H absorber layers of 900 nm and the n layer of 36 nm, and this method comprises:
P layer with following deposition parameters deposit a-Si battery:
The flow of SiH4: 5.64 slm
The flow of H2: 10.58 slm
The flow of trimethyl borine (TMB): 6.45 slm
The flow of CH4: 10.26 slm
Deposition rate: 2.6/s
Deposition time: 39 s
Pressure: 0.5 mbar
Temperature: 200 ℃
Power: 295 W,
N layer with following deposition parameters deposit a-Si battery:
The flow of SiH4: 0.86 slm
The flow of H2: 95 slm
The flow of PH3: 1.02 slm
Deposition rate: 1/s
Deposition time: 300 s
Pressure: 2 mbar
Temperature: 200 ℃
Power: 1800 W,
P layer with following deposition parameters deposit μ c-Si battery:
The flow of SiH4: 1.6 slm
The flow of H2: 200 slm
The flow of trimethyl borine (TMB): 0.5 slm
Deposition rate: 1.4/s
Deposition time: 175 s
Pressure: 2.5 mbar
Temperature: 160 ℃
Power: 3100 W, and
N layer with following deposition parameters deposit μ c-Si battery:
The flow of SiH4: 6.21 slm
The flow of H2: 14.36 slm
The flow of PH3: 4 slm
Deposition rate: 2/s
Deposition time: 180 s
Pressure: 0.5 mbar
Temperature: 160 ℃
Power: 700 W.
Can be in the variation of the method according to this invention that any variation that proposes maybe will to propose is combined under reconcilable situation, this method comprises that the steam flushing between the deposit of the deposit of p layer and absorber layers handles.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, the method according to this invention is carried out the steam flushing in the vapour pressure strength of 1.2 mbar and is handled 120 s.
Can be in a variation that any variation that proposes maybe will to propose is combined under reconcilable situation, the method according to this invention, 120 s are handled in the steam flushing of carrying out in the vapour pressure strength of 2 mbar between the deposit of the p layer of a-Si battery and absorber layers, and 120 s are handled in the steam flushing of carrying out in the vapour pressure strength of 1.2 mbar between the deposit of the p layer of μ c-Si and absorber layers.
Description of drawings
By means of the further illustration the present invention of accompanying drawing, these accompanying drawings illustrate:
Fig. 1 is the diagram according to the tandem junction thin film silicon photovoltaic cell of prior art;
Fig. 2 is the diagram of the diagram Jsc relevant with the thickness of i layer;
Fig. 3 is the diagram of the diagram stable Eta relevant with thickness;
Fig. 4 is the diagram of the diagram total reflection relevant with wavelength;
Fig. 5 is the diagram of the diagram Pmpp relevant with bottom battery thickness;
Fig. 6 is the diagram according to tandem junction of the present invention.
Embodiment
Fig. 1 shows the tandem junction thin film silicon photovoltaic cell 50(thickness of prior art and does not draw to scale).Arrow indication incident direction of light.Tandem junction comprises substrate 41, preceding electrode 42, bottom battery 43, p doping Si layer (p μ c-Si:H) 44, i layer μ c-Si:H 45, n doping Si layer (n a-Si:H/n μ c-Si:H) 46, rear electrode 47, rear reflector 48, top battery 51, p doping Si layer (p a-Si:H/p μ c-Si:H) 52, i layer a-Si:H 53, n doping Si layer (n a-Si:H/n μ c-Si:H) 54.
Fig. 6 show form with so-called non-crystallite lamination knot according to tandem junction of the present invention.This tandem junction comprise the thickness with 1.55 μ m preceding contact site 3, have the thickness of 210 nm a-Si layer 4, have the thickness of 900 nm μ c-Si:H layer 10, have back contact site 11 and the white paper tinsel 13 of the thickness of 1.55 μ m.
The present invention proposes and a kind ofly exist in the following way 1.4 m 2Large tracts of land on have the method for the hull cell of the absorber layers thickness that reduces with high firm power production:
A) utilize the preceding contact site of high mist degree of height homogeneity to strengthen the luminous energy power that falls at whole depositing region; And
B) as the white paper tinsel with improved reflectivity properties of rear reflector;
C) by the homogeney of the semiconductor layer that increases, reduces the influence of described layer varied in thickness; And
D) by reducing the thickness of Si layer, therefore reduce the neurological susceptibility to the a-Si decline.
Absorber layers (i layer 53,45) in the tandem junction configuration as shown in fig. 1 can be reduced to 210nm ± 20nm and be reduced to 900nm ± 200nm for bottom battery 43 for top battery 51.This can realize under the situation of not losing firm power.In the prior art, top battery 51 is implemented as the thickness with about 300 nm, and bottom battery 43 is implemented as the thickness with about 1.45 μ m.By means of the present invention, 1/3 the minimizing of the material cost of top battery and time is possible.Bottom battery thickness almost can reduce half.This is basically owing to the homogeneous improvement of the semiconductor layer of reaching in the active part of (i) solar panel+-5% and (ii) reach the improved homogeney of the inhomogeneity LPCVD ZnO of 10% mist degree layer and (iii) 25% mist degree.All these realize allowing good light restriction or falling into light.White paper tinsel as rear reflector layer 48 provides good especially back reflection and scattering of light, therefore further good light restriction is had contribution.Improved reflection to top battery provide more light and therefore thinner battery be possible.
The important point is that thinner top battery (amorphous silicon) presents lower decline (Staebler-Wronski effect) in addition.By this point, the decline of the integral body of tandem junction battery is significantly reduced, below 10%.
By the improved processing at the interface between p layer and the i layer, i.e. the water vapour of the 1.2mbar of 120 s flushing is handled, and has improved the quality of bottom battery.The performance of bottom battery is enhanced, and improved sunken light allows extremely thin battery.
Have according to advantage of the present invention, have that battery according to the structure of Fig. 1 comprises the preceding electrode 42 made by LPCVD ZnO, pin-pin top/bottom battery structure that Si makes and by the rear electrode 47 that LPCVD ZnO makes, be the reflector as white paper tinsel afterwards.This white paper tinsel is polyethylene butyraldehyde paper tinsel preferably, and it is equipped with white reflection grain or equivalent.Before electrode 42 have 25% average mist degree, homogeney is+/-10%.
The improved load lock system of TCO deposition tool has promoted outstanding sunken light.Described the correlated characteristic of described load lock in US 61/367,910, the document is incorporated herein by reference.With the load lock temperature of 184o C, the process pressure of 0.5 mbar, the B of 200sccm 2H 6, 2200sccm the DEZ(diethyl zinc) and the H of 2460sccm 2O comes this layer of deposit.The pin structure presents the top battery of n layer of i layer (a-Si:H), the 30nm of silicon p layer with 10nm, 210nm.Bottom battery presents the n layer of the p layer of 24nm, the intrinsic silicon of 900nm (μ c-Si:H) layer and last 36nm.The varied in thickness of absorber layers is as indicated above, and the varied in thickness of p/n layer is+/-20%.
Table 1 has been summed up the deposition parameters of pin structure.Between p layer and i layer, carry out steam treatment (water flushing).At US7, proposed described technology in 504,279, so its disclosure is incorporated herein by reference.For p-i knot, steam pressure is 2mbar, 120 s.At the 2nd p-i at the interface, pressure is 1.2mbar, 120 s.It is the TCO ZnO rear electrode of making by LPCVD 47 after the pin Si structure.Deposition parameters is: the H of load lock temperature 180o C, 577sccm 2, 400sccm B 2H 6, 2460sccm H 2The process pressure of the DEZ of O, 2200sccm, 0.5 mbar.Finish whole piling up by the white paper tinsel with 0.5 mm thickness.
Table 1
Figure 920223DEST_PATH_IMAGE001
The TMB=trimethyl borine, the DR=deposition rate, Dep t=deposition time, all values that provide relate to 1.4 m 2Substrate to be coated.Described layer order as deposit among Fig. 1 and shown in like that.

Claims (13)

1. range〉1.4 m 2The solar battery apparatus of concatenated configuration, it comprises a-Si battery (4) and μ c-Si battery (10), the absorber layers of described a-Si battery (4) has the thickness of 210nm ± 20nm, and the absorber layers of described μ c-Si battery (10) has the thickness of 900nm ± 200nm.
2. solar battery apparatus according to claim 1, described absorber layers have ± 5% homogeney.
3. solar battery apparatus according to claim 1 and 2 comprises preferably the transparent conductive oxide layer (3) by the ZnO LPCVD deposit, that have 25% mist degree.
4. according to each described solar battery apparatus in the claim 1 to 3, comprise homogeney with mist degree of 10% and preferably by the LPCVD deposit, as the transparent conductive oxide layer (11) of the ZnO of rear electrode.
5. according to each described solar battery apparatus in the claim 1 to 4, comprise polyethylene butyraldehyde preferably, as the white paper tinsel (13) of rear reflector, the thickness that it preferably is equipped with white reflection grain and preferably has 0.5 mm.
6. according to each described solar battery apparatus in the claim 1 to 5, has the photic decline less than 10%.
7. according to each described solar battery apparatus in the claim 1 to 6, described a-Si battery (4) comprises the silicon p layer of 10 nm, the a-Si:H absorber layers of 210 nm, the n layer of 30 nm, and described μ c-Si battery (10) comprises the p layer of 24 nm, the μ c-Si:H absorber layers of 900 nm and the n layer of 36 nm.
8. make range for one kind〉1.4 m 2The method of solar battery apparatus of concatenated configuration, this solar battery apparatus comprises a-Si battery (4) and μ c-Si battery (10), the absorber layers of described a-Si battery (4) has the thickness of 210nm ± 20nm, the absorber layers of described μ c-Si battery (10) has the thickness of 900nm ± 200nm, and described method comprises:
Described absorber layers with the described a-Si battery of following deposition parameters PECVD deposit (4):
The flow of SiH4: 10.4 slm
The flow of H2: 10.4 slm
Deposition rate: 3.35/s
Deposition time: 634 s
Pressure: 0.5 mbar
Temperature: 200 ℃
Power: 380 W, and
Described absorber layers with the described μ c of following deposition parameters PECVD deposit-Si battery (10):
The flow of SiH4: 7.7 slm
The flow of H2: 170 slm
Deposition rate: 5/s
Deposition time: 1830 s
Pressure: 2.5 mbar
Temperature: 160 ℃
Power: 3500 W.
9. the method for the described device of manufacturing according to claim 8 further comprises the transparent conductive oxide layer (3) of the ZnO with mist degree of 25%, and comprises with the described ZnO layer of following deposition parameters LPCVD deposit:
Temperature: 180 ℃
The flow of H2: 577 sccm
The flow of B2H6: 400 sccm
The flow of H2O: 2460 sccm
The flow of DEZ: 2200 sccm
Pressure: 0.5 mbar.
10. according to Claim 8 or 9 described methods, described a-Si battery (4) comprises the silicon p layer of 10 nm, the a-Si:H absorber layers of 210 nm, the n layer of 30 nm, described μ c-Si battery (10) comprises the p layer of 24 nm, the μ c-Si:H absorber layers of 900 nm and the n layer of 36 nm, and described method comprises:
Described p layer with the described a-Si battery of following deposition parameters deposit (4):
The flow of SiH4: 5.64 slm
The flow of H2: 10.58 slm
The flow of trimethyl borine (TMB): 6.45 slm
The flow of CH4: 10.26 slm
Deposition rate: 2.6/s
Deposition time: 39 s
Pressure: 0.5 mbar
Temperature: 200 ℃
Power: 295 W,
Described n layer with the described a-Si battery of following deposition parameters deposit (4):
The flow of SiH4: 0.86 slm
The flow of H2: 95 slm
The flow of PH3: 1.02 slm
Deposition rate: 1/s
Deposition time: 300 s
Pressure: 2 mbar
Temperature: 200 ℃
Power: 1800 W,
Described p layer with the described μ c of following deposition parameters deposit-Si battery (10):
The flow of SiH4: 1.6 slm
The flow of H2: 200 slm
The flow of trimethyl borine (TMB): 0.5 slm
Deposition rate: 1.4/s
Deposition time: 175 s
Pressure: 2.5 mbar
Temperature: 160 ℃
Power: 3100 W, and
Described n layer with following deposition parameters deposit described μ c-Si battery (10):
The flow of SiH4: 6.21 slm
The flow of H2: 14.36 slm
The flow of PH3: 4 slm
Deposition rate: 2/s
Deposition time: 180 s
Pressure: 0.5 mbar
Temperature: 160 ℃
Power: 700 W.
11. each described method in 10 according to Claim 8 comprises that the steam flushing between the deposit of the deposit of p layer and absorber layers is handled.
12. method according to claim 11 is carried out described steam flushing in the vapour pressure strength of 1.2 mbar and is handled 120 s.
13. method according to claim 11,120 s are handled in the described steam flushing of carrying out in the vapour pressure strength of 2 mbar between the deposit of the described p layer of described a-Si battery (4) and described absorber layers, and carry out described μ c-Si(10 in the vapour pressure strength of 1.2 mbar) described p layer and the described steam flushing between the deposit of described absorber layers handle 120 s.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009127714A2 (en) * 2008-04-18 2009-10-22 Oerlikon Trading Ag, Truebbach Photovoltaic device and method of manufacturing a photovoltaic device
WO2010046180A2 (en) * 2008-10-22 2010-04-29 Applied Materials Inc. - A Corporation Of The State Of Delaware Semiconductor device and method of producing a semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4733519B2 (en) 2002-10-25 2011-07-27 エリコン ソーラー アーゲー，トゥルーバッハ Manufacturing method of semiconductor device and semiconductor device obtained by this method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009127714A2 (en) * 2008-04-18 2009-10-22 Oerlikon Trading Ag, Truebbach Photovoltaic device and method of manufacturing a photovoltaic device
WO2010046180A2 (en) * 2008-10-22 2010-04-29 Applied Materials Inc. - A Corporation Of The State Of Delaware Semiconductor device and method of producing a semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOACHIM MULLER等: "TCO and light trapping in silicon thin film solar cells", 《SOLAR ENERGY》 *
S.FAY等: "Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 *

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