US20080246087A1 - Mos transistor for reducing short-channel effects and its production - Google Patents

Mos transistor for reducing short-channel effects and its production Download PDF

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US20080246087A1
US20080246087A1 US12/062,851 US6285108A US2008246087A1 US 20080246087 A1 US20080246087 A1 US 20080246087A1 US 6285108 A US6285108 A US 6285108A US 2008246087 A1 US2008246087 A1 US 2008246087A1
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mos transistor
groove
channel effects
implantation
source
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Xiaoxu KANG
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Shanghai IC R&D Center Co Ltd
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Assigned to SHANGHAI IC R&D CENTER CO., LTD. reassignment SHANGHAI IC R&D CENTER CO., LTD. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: KANG, Xiaoxu
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Definitions

  • the invention relates to semiconductor product and, more particularly, to a metal-oxide semiconductor (MOS) transistor for reducing short-channel effects.
  • MOS metal-oxide semiconductor
  • MOS metal-oxide semiconductor
  • the short-channel effects can be reduced by decreasing the thickness of a gate insulation layer or producing a source and drain structure with shallow junctions.
  • the thinness of the existing gate insulation layer has approached a limit; that is, when further decreasing the thickness, an increasing leakage current even a breakdown will easily arise in the gate. Therefore, further decreasing the thickness of a gate insulation layer is not an effective method for reducing the short-channel effects.
  • by producing a source and drain structure with shallow junctions to reduce the short-channel effects is also difficult to achieved.
  • an epitaxial technique is usually used to produce an elevated source and drain structure.
  • the epitaxial technique is difficult to control and has the problem of high complexity, high cost, high defect density, etc.
  • An objective of the invention is to provide a metal-oxide semiconductor (MOS) transistor for reducing short-channel effects and its fabrication method. It makes a gate stack in a groove lower than the top surface of source and drain areas to get a relative elevated source and drain structure. And thereby the short-channel effects can be effectively reduced with less technology difficulty and cost. Furthermore, the height of the gate stack can be reduced to provide a larger process window for the subsequent process of pre-metal dielectric deposition.
  • MOS metal-oxide semiconductor
  • the invention provides a MOS transistor for reducing short-channel effects.
  • the MOS transistor is fabricated on a silicon substrate after an isolation module is finished, and the MOS transistor includes a gate stack and source and drain areas. Wherein the silicon substrate has a groove and the gate stack is formed in the groove.
  • the bottom of the groove is lower than the top surface of the source and drain areas.
  • the area of the groove is not less than that of the gate stack.
  • the MOS transistor for reducing short-channel effects further includes a lightly doped drain (LDD) structure.
  • LDD lightly doped drain
  • the MOS transistor for reducing short-channel effects further includes a halo implantation structure.
  • the gate stack comprises a gate insulation layer and a gate electrode which are layered.
  • the MOS transistor for reducing short-channel effects further includes a metal silicide layer which is formed on the source and drain areas.
  • the invention provides a fabrication method of a MOS transistor for reducing short-channel effects, which is fabricated on a silicon substrate after an isolation module is finished.
  • the method includes the following steps: (1) forming a groove in the silicon substrate; (2) carrying out well implantation, anti-punchthrough implantation and threshold-voltage-adjustment implantation; (3) forming a gate stack in the groove, wherein the gate stack includes a gate insulation layer and a gate electrode, which are layered; (4) carrying out lightly doped drain implantation and halo implantation; (5) forming a gate sidewall spacer; (6) carrying out source and drain implantation to get source and drain areas; (7) forming a metal silicide layer on the source and drain areas.
  • Step (3) includes patterning the gate structure in the groove.
  • Step (1) includes the following steps: (10) patterning the groove corresponding to the gate stack by photolithography; (11) forming the groove by etching; (12) optimizing the surface of the silicon substrate.
  • the groove is formed by wet etching.
  • the surface of the silicon substrate is optimized by oxidation and wet etching.
  • FIG. 1 is a cross-sectional view showing the MOS transistor for reducing short-channel effects according to an embodiment of the invention.
  • FIG. 2 is a flow chart of the MOS transistor fabrication for reducing short-channel effects according to the embodiment of the invention.
  • FIG. 3 is a cross-sectional view showing the silicon substrate after Step S 20 in FIG. 2 .
  • FIG. 4 is a cross-sectional view showing the silicon substrate after Step S 21 in FIG. 2 .
  • MOS metal-oxide semiconductor
  • the MOS transistor 1 for reducing short-channel effects is produced on a silicon substrate 2 after an isolation module is finished.
  • the MOS transistor 1 includes a gate stack 10 , gate sidewall spacer 11 , source 12 and drain 13 areas, lightly doped drain (LDD) structures 14 , and halo implantation structures 15 .
  • LDD lightly doped drain
  • the gate stack 10 includes a gate insulation layer 100 and a gate electrode 102 .
  • the silicon substrate 2 has a groove 20 (shown in FIG. 4 ) for receiving the gate stack 10 , wherein the bottom of the groove 20 is lower than the top surface of the source 12 and drain 13 areas. Thereby the gate stack 10 formed in the groove 20 will have a bottom surface lower than the top surface of the source 12 and drain 13 areas to get a relative elevated source and drain structure.
  • the area of the groove 20 is not less than that of the gate stack 10 and the gate stack 10 is formed in the groove 20 .
  • the gate sidewall spacer 11 are formed on both sides of the gate stack 10 to ensure electrode insulation.
  • the source 12 and the drain 13 are formed in the silicon substrate 2 and flank the gate stack 10 .
  • the metal silicide layers 120 and 130 are respectively formed on the source 12 and the drain 13 .
  • the isolation module is formed by the technology of shallow trench isolation (STI); the gate insulation layer 100 is made of silicon-based dielectric; the gate electrode 102 is a polysilicon gate; and the gate sidewalls spacer 11 are made of silicon oxide and nitride.
  • STI shallow trench isolation
  • the LDD structures 14 and halo implantation structures 15 can reduce the short-channel effects to a certain degree, but do not achieve the most desirable effects.
  • the groove 20 the channel of the MOS transistor 1 is lower than the top surface of the source 12 and drain 13 areas, therefore the short-channel effects is reduced effectively.
  • Step S 20 is a flow chart of the manufacturing method of the MOS transistor 1 .
  • Step S 20 First carry out Step S 20 , patterning the groove 20 corresponding to the gate stack 10 by photolithography.
  • FIG. 3 which is a cross-sectional view showing the silicon substrate 2 after Step S 20 . As shown in FIG. 3 , a photoresist film 3 with the pattern of the groove 20 covers the silicon substrate 2 .
  • Step S 21 forming the groove 20 by etching.
  • the groove 20 is formed by wet etching.
  • FIG. 4 is a cross-sectional view showing the silicon substrate 2 after Step S 21 . As shown in FIG. 4 , the groove 20 is formed in the silicon substrate 2 .
  • Step S 22 removing photoresist and optimizing the surface of the silicon substrate 2 .
  • oxidation and wet etching is used to optimize the surface of the silicon substrate 2 .
  • Step S 23 carrying out well implantation, anti-punchthrough implantation and threshold-voltage-adjustment implantation.
  • Step S 24 forming the gate stack 10 in the groove 20 .
  • the gate stack 10 includes the gate insulation layer 100 and the gate electrode 102 .
  • the gate stack 10 is formed by photolithography and etching after the deposition of the gate insulation layer 100 and then the gate electrode 102 .
  • Step S 24 further includes patterning the gate structure in the groove.
  • Step S 25 carrying out lightly doped drain implantation and halo implantation to form the LDD structures 14 and the halo implantation structures 15 .
  • Step S 26 forming the gate sidewall spacers 11 .
  • Step S 27 carrying out source and drain implantation to get the source 12 and drain 13 areas.
  • Step S 28 forming the metal silicide layers 120 and 130 on the source and drain areas.
  • Step S 20 and Step S 24 usually two sheets of mask are used to form the needed pattern, and the same mask of different polarity photoresist can also be used. For example, in Step S 20 negative photoresist is used and in Step S 24 positive photoresist is used. This enormous cuts the cost.
  • the MOS transistor for reducing short-channel effects and its fabrication of the invention make the gate stack in a groove lower than the top surface of the source and drain areas to get a relative elevated source and drain structure. This can reduce short-channel effects effectively with less technology difficulty and cost. Furthermore, the height of the gate stack can be reduced to provide a larger process window for the subsequent process of pre-metal dielectric deposition.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The invention is related to a MOS transistor and its fabrication method to reduce short-channel effects. Existing process has the problem of high complexity and high cost to reduce short-channel effects by using epitaxial technique to produce an elevated source and drain structure. In the invention, the MOS transistor, fabricated on a silicon substrate after an isolation module is finished, includes a gate stack, a gate sidewall spacer, and source and drain areas. The silicon substrate has a groove and the gate stack is formed in the groove. And the process for the MOS transistor includes the following steps: forming the groove; carrying out well implantation, anti-punchthrough implantation and threshold-voltage adjustment implantation; forming the gate stack in the groove which comprising patterning the gate electrode; carrying lightly doped drain implantation and halo implantation; forming the gate sidewall spacer; carrying source and drain implantation to get the source and drain areas; forming a metal silicide layer on the source and drain areas.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to semiconductor product and, more particularly, to a metal-oxide semiconductor (MOS) transistor for reducing short-channel effects.
  • 2. Description of Related Art
  • Semiconductor devices can work faster by scaling down their dimensions. Therefore the channel length of a metal-oxide semiconductor (MOS) transistor is being scaled down. However, short-channel effects will arise when the channel length shortened to a certain degree, leading to the worsening of device performance, even malfunctioning. The short-channel effects can be reduced by decreasing the thickness of a gate insulation layer or producing a source and drain structure with shallow junctions. However, the thinness of the existing gate insulation layer has approached a limit; that is, when further decreasing the thickness, an increasing leakage current even a breakdown will easily arise in the gate. Therefore, further decreasing the thickness of a gate insulation layer is not an effective method for reducing the short-channel effects. In addition, by producing a source and drain structure with shallow junctions to reduce the short-channel effects is also difficult to achieved.
  • For reducing the short-channel effects, an epitaxial technique is usually used to produce an elevated source and drain structure. However, the epitaxial technique is difficult to control and has the problem of high complexity, high cost, high defect density, etc.
    • SUMMARY OF THE INVENTION
  • An objective of the invention is to provide a metal-oxide semiconductor (MOS) transistor for reducing short-channel effects and its fabrication method. It makes a gate stack in a groove lower than the top surface of source and drain areas to get a relative elevated source and drain structure. And thereby the short-channel effects can be effectively reduced with less technology difficulty and cost. Furthermore, the height of the gate stack can be reduced to provide a larger process window for the subsequent process of pre-metal dielectric deposition.
  • To achieve the above objective, the invention provides a MOS transistor for reducing short-channel effects. The MOS transistor is fabricated on a silicon substrate after an isolation module is finished, and the MOS transistor includes a gate stack and source and drain areas. Wherein the silicon substrate has a groove and the gate stack is formed in the groove.
  • In the MOS transistor for reducing short-channel effects, the bottom of the groove is lower than the top surface of the source and drain areas.
  • In the MOS transistor for reducing short-channel effects, the area of the groove is not less than that of the gate stack.
  • The MOS transistor for reducing short-channel effects further includes a lightly doped drain (LDD) structure.
  • The MOS transistor for reducing short-channel effects further includes a halo implantation structure.
  • In the MOS transistor for reducing short-channel effects, the gate stack comprises a gate insulation layer and a gate electrode which are layered.
  • The MOS transistor for reducing short-channel effects further includes a metal silicide layer which is formed on the source and drain areas.
  • To achieve the above objective, the invention provides a fabrication method of a MOS transistor for reducing short-channel effects, which is fabricated on a silicon substrate after an isolation module is finished. The method includes the following steps: (1) forming a groove in the silicon substrate; (2) carrying out well implantation, anti-punchthrough implantation and threshold-voltage-adjustment implantation; (3) forming a gate stack in the groove, wherein the gate stack includes a gate insulation layer and a gate electrode, which are layered; (4) carrying out lightly doped drain implantation and halo implantation; (5) forming a gate sidewall spacer; (6) carrying out source and drain implantation to get source and drain areas; (7) forming a metal silicide layer on the source and drain areas.
  • In the fabrication method of a MOS transistor for reducing short-channel effects, Step (3) includes patterning the gate structure in the groove.
  • In the fabrication method of a MOS transistor for reducing short-channel effects, Step (1) includes the following steps: (10) patterning the groove corresponding to the gate stack by photolithography; (11) forming the groove by etching; (12) optimizing the surface of the silicon substrate.
  • In the fabrication method of a MOS transistor for reducing short-channel effects and in Step (11), the groove is formed by wet etching.
  • In the fabrication method of a MOS transistor for reducing short-channel effects and in Step (12), the surface of the silicon substrate is optimized by oxidation and wet etching.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • These and other features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings.
  • FIG. 1 is a cross-sectional view showing the MOS transistor for reducing short-channel effects according to an embodiment of the invention.
  • FIG. 2 is a flow chart of the MOS transistor fabrication for reducing short-channel effects according to the embodiment of the invention.
  • FIG. 3 is a cross-sectional view showing the silicon substrate after Step S20 in FIG. 2.
  • FIG. 4 is a cross-sectional view showing the silicon substrate after Step S21 in FIG. 2.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The metal-oxide semiconductor (MOS) transistor for reducing short-channel effects and its fabrication of the invention will be described in detail thereinafter.
  • As shown in FIG. 1, the MOS transistor 1 for reducing short-channel effects is produced on a silicon substrate 2 after an isolation module is finished. The MOS transistor 1 includes a gate stack 10, gate sidewall spacer 11, source 12 and drain 13 areas, lightly doped drain (LDD) structures 14, and halo implantation structures 15.
  • The gate stack 10 includes a gate insulation layer 100 and a gate electrode 102. The silicon substrate 2 has a groove 20 (shown in FIG. 4) for receiving the gate stack 10, wherein the bottom of the groove 20 is lower than the top surface of the source 12 and drain 13 areas. Thereby the gate stack 10 formed in the groove 20 will have a bottom surface lower than the top surface of the source 12 and drain 13 areas to get a relative elevated source and drain structure. In addition, the area of the groove 20 is not less than that of the gate stack 10 and the gate stack 10 is formed in the groove 20.
  • The gate sidewall spacer 11 are formed on both sides of the gate stack 10 to ensure electrode insulation.
  • The source 12 and the drain 13 are formed in the silicon substrate 2 and flank the gate stack 10. The metal silicide layers 120 and 130 are respectively formed on the source 12 and the drain 13.
  • In one embodiment of the invention, the isolation module is formed by the technology of shallow trench isolation (STI); the gate insulation layer 100 is made of silicon-based dielectric; the gate electrode 102 is a polysilicon gate; and the gate sidewalls spacer 11 are made of silicon oxide and nitride.
  • The LDD structures 14 and halo implantation structures 15 can reduce the short-channel effects to a certain degree, but do not achieve the most desirable effects. In an embodiment of the invention, by the groove 20 the channel of the MOS transistor 1 is lower than the top surface of the source 12 and drain 13 areas, therefore the short-channel effects is reduced effectively.
  • Refer to FIG. 2, which is a flow chart of the manufacturing method of the MOS transistor 1. First carry out Step S20, patterning the groove 20 corresponding to the gate stack 10 by photolithography. Refer to FIG. 3, which is a cross-sectional view showing the silicon substrate 2 after Step S20. As shown in FIG. 3, a photoresist film 3 with the pattern of the groove 20 covers the silicon substrate 2.
  • Then proceed with Step S21, forming the groove 20 by etching. In one embodiment of the invention, the groove 20 is formed by wet etching. Refer to FIG. 4, which is a cross-sectional view showing the silicon substrate 2 after Step S21. As shown in FIG. 4, the groove 20 is formed in the silicon substrate 2.
  • Then proceed with Step S22, removing photoresist and optimizing the surface of the silicon substrate 2. In one embodiment of the invention, oxidation and wet etching is used to optimize the surface of the silicon substrate 2.
  • Then proceed with Step S23, carrying out well implantation, anti-punchthrough implantation and threshold-voltage-adjustment implantation.
  • Then proceed with Step S24, forming the gate stack 10 in the groove 20. The gate stack 10 includes the gate insulation layer 100 and the gate electrode 102. In one embodiment of the invention, the gate stack 10 is formed by photolithography and etching after the deposition of the gate insulation layer 100 and then the gate electrode 102. And Step S24 further includes patterning the gate structure in the groove.
  • Then proceed with Step S25, carrying out lightly doped drain implantation and halo implantation to form the LDD structures 14 and the halo implantation structures 15.
  • Then proceed with Step S26, forming the gate sidewall spacers 11.
  • Then proceed with Step S27, carrying out source and drain implantation to get the source 12 and drain 13 areas.
  • Then proceed with Step S28, forming the metal silicide layers 120 and 130 on the source and drain areas.
  • In Step S20 and Step S24, usually two sheets of mask are used to form the needed pattern, and the same mask of different polarity photoresist can also be used. For example, in Step S20 negative photoresist is used and in Step S24 positive photoresist is used. This immensely cuts the cost.
  • In summary, the MOS transistor for reducing short-channel effects and its fabrication of the invention make the gate stack in a groove lower than the top surface of the source and drain areas to get a relative elevated source and drain structure. This can reduce short-channel effects effectively with less technology difficulty and cost. Furthermore, the height of the gate stack can be reduced to provide a larger process window for the subsequent process of pre-metal dielectric deposition.

Claims (12)

1. A metal-oxide semiconductor (MOS) transistor for reducing short-channel effects, fabricated on a silicon substrate after an isolation module is finished, the MOS transistor comprising a gate stack and source and drain areas,
wherein the silicon substrate has a groove and the gate stack is formed in the groove.
2. The MOS transistor for reducing short-channel effects according to claim 1, wherein the bottom of the groove is lower than the top surface of the source and drain areas.
3. The MOS transistor for reducing short-channel effects according to claim 1, wherein the area of the groove is not less than that of the gate stack.
4. The MOS transistor for reducing short-channel effects according to claim 1, further comprising a LDD (lightly doped drain) structure.
5. The MOS transistor for reducing short-channel effects according to claim 1, further comprising a halo implantation structure.
6. The MOS transistor for reducing short-channel effects according to claim 1, wherein the gate stack comprises a gate insulation layer and a gate electrode which are layered.
7. The MOS transistor for reducing short-channel effects according to claim 1, further comprising a metal silicide layer which is formed on the source and drain areas.
8. A manufacturing method of a MOS transistor for reducing short-channel effects, the MOS transistor fabricated on a silicon substrate after an isolation module is finished, the method comprising the following steps:
(1) forming a groove in the silicon substrate;
(2) carrying out well implantation, anti-punchthrough implantation and threshold-voltage-adjustment implantation;
(3) forming a gate stack in the groove, wherein the gate stack comprises a gate insulation layer and a gate electrode which are layered;
(4) carrying out lightly doped drain implantation and halo implantation;
(5) forming a gate sidewall spacer;
(6) carrying out source and drain implantation to get source and drain areas.
7) forming a metal silicide layer on the source and drain areas.
9. The fabrication method of a MOS transistor for reducing short-channel effects according to claim 8, the step (3) comprising patterning the gate structure in the groove.
10. The fabrication method of a MOS transistor for reducing short-channel effects according to claim 8, the step (1) comprising the following steps:
(10) patterning the groove corresponding to the gate stack by photolithography;
(11) forming the groove by etching;
(12) optimizing the surface of the silicon substrate.
11. The fabrication method of a MOS transistor for reducing short-channel effects according to claim 10, wherein, in Step (11), the groove is formed by wet etching.
12. The fabrication method of a MOS transistor for reducing short-channel effects according to claim 10, wherein, in Step (12), the surface of the silicon substrate is optimized by oxidation and wet etching.
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US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
US10720463B2 (en) 2015-08-18 2020-07-21 Galaxycore Shanghai Limited Corporation Backside illuminated image sensor with three-dimensional transistor structure and forming method thereof

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