US20080156353A1 - Apparatus for removing haze in photo mask and method for removing haze in a photo mask - Google Patents
Apparatus for removing haze in photo mask and method for removing haze in a photo mask Download PDFInfo
- Publication number
- US20080156353A1 US20080156353A1 US11/770,528 US77052807A US2008156353A1 US 20080156353 A1 US20080156353 A1 US 20080156353A1 US 77052807 A US77052807 A US 77052807A US 2008156353 A1 US2008156353 A1 US 2008156353A1
- Authority
- US
- United States
- Prior art keywords
- photo mask
- chamber
- reactant gas
- impurities
- haze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the invention relates to an apparatus nor removing haze in a photo mask and a method for removing haze in a photo mask.
- a photolithography process using a photo mask is used.
- a photoresist layer is applied onto a material layer on which a desired pattern will be formed, and light is irradiated onto a part of the photoresist layer through a photo mask having a predetermined, light shielding pattern.
- the irradiated part of the photoresist layer is removed by a developing process using a developer solution, so as to form a photoresist layer pattern.
- the photoresist layer pattern is used to expose a part of the material layer such that the exposed part of the material layer is removed by an etching process using the photoresist layer pattern as an etching mask.
- a material layer pattern corresponding to the light shielding pattern of the photo mask, can be formed.
- impurities on the photo mask may be transcribed onto the photoresist layer, thus making it impossible to achieve the photoresist layer pattern having a desired profile. Consequently, an unwanted pattern is possibly formed on the material layer. Moreover, if some of the impurities on the photo mask have a size exceeding a critical value, a haze, which is known as a growing defect having a gradually increasing size, may occur. Haze is a main reason for defective pattern transcription.
- a conventional method for fabricating a photo mask comprises a cleaning process for removing impurities caused during a patterning process.
- the cleaning process may be selected from among SPM (sulfuric acid peroxide mixture) cleaning, APM (ammonia peroxide mixture) cleaning, ultra pure water cleaning processes, etc.
- the SPM cleaning process is for cleaning a photo mask at a predetermined temperature by use of a mixture of sulfuric acid and hydrogen peroxide. Due to the use of sulfuric acid, in this case, sulfate may remain on the photo mask.
- the APM cleaning process is for cleaning a photo mask at a predetermined temperature by use of a mixture of a very small amount of ammonia, hydrogen peroxide, and ultra-pure water.
- ammonia may remain on the photo mask.
- the above mentioned residues may first diffuse into a transparent substrate, a light shielding layer, and a phase shift layer, which constitute the photo mask, and then, erupt from the surface of the photo mask.
- the above described cleaning processes respectively remove the impurities on the surface of the photo mask, the cleaning processes may adversely result in residual ions causing haze.
- the residual ions caused by the cleaning processes, tend to react with any peripheral, highly reactive materials upon receiving light energy during an exposure process. If the size of the residual ions exceeds a critical value, haze occurs. As described above, the haze causes undesired pattern transcription.
- the invention provides an apparatus for removing a haze formed in a photo mask including: a chamber having a bake module disposed therein to support the photo mask; a reactant gas feed line to feed a reactant gas into the chamber; and a discharge device to discharge impurities in the chamber to the outside of the chamber.
- the bake module preferably includes a heat generator to increase the temperature of the photo mask above a predetermined temperature.
- the reactant gas feed line preferably communicates with a source of reactant gas, preferably chlorine (Cl 2 ) gas.
- the discharge device preferably includes a pump communicating with the chamber and a discharge line connected to the pump.
- the invention provides a method for removing a haze in a photo mask including the steps of: loading a photo mask into a chamber; increasing the temperature of the loaded photo mask to above a predetermined temperature; feeding a reactant gas into the chamber, thereby reacting the reactant gas and impurities present on the increased temperature photo mask to form a reaction product; and discharging the reaction product of the reactant gas and the impurities to the outside of the chamber.
- the increased temperature of the photo mask is preferably sufficiently high to allow impurities diffused in the photo mask to erupt from the photo mask.
- the reactant gas is preferably chlorine (Cl 2 ) gas, especially when the impurities include ammonia
- the method preferably further include the step of cleaning the photo mask with an ultra-pure water cleaning process or an ultra-pure ozone cleaning process, thereby removing residual reactant gas remaining after the reaction product is formed.
- FIG. 1 is a view illustrating an apparatus and a method for removing a haze in a photo mask according to an embodiment of the invention.
- FIG. 1 is a view illustrating an apparatus and a method for removing haze in a photo mask according to an embodiment of the invention.
- an apparatus 100 for removing haze in a photo mask includes a chamber 110 having a defined internal space 112 sealed or isolated from the outside.
- a bake module 114 is disposed within the chamber 110 , for example at the bottom of the chamber 110 as illustrated.
- a photo mask 200 from which haze will be removed, is supported on the bake module 114 .
- the bake module 114 serves to raise the temperature of the photo mask 200 up to more than a predetermined temperature.
- a hot wire (not shown) as another heating element may be disposed in the bake module 114 .
- a reactant gas feed line 122 and purge gas feed lines 124 and 126 are connected to and communicate with the chamber 110 , illustrated at the top thereof, opposite the bake module 114 .
- Chlorine (Cl 2 ) gas, or another suitable reactant gas is fed through the reacting gas feed line 122 , into the internal space 112 of the chamber 110 .
- nitrogen (N 2 ) gas and/or oxygen (O 2 ) gas are fed through the purge gas feed lines 124 and 126 , into the internal space 112 of the chamber 110 .
- a mask loader 130 is disposed at a sidewall of the chamber 110 .
- the mask loader 130 as illustrated in the drawing by arrows 132 , is used to load the photo mask 200 into the chamber 110 or unload the photo mask 200 from the chamber 110 .
- a power module 140 and a pump 150 are disposed at an opposite sidewall of the chamber 110 .
- the power module 140 supplies electricity to the haze removing apparatus 100 .
- the pump 150 discharges contaminants within the internal space 112 of the chamber 110 to the outside.
- a valve 160 is disposed between the pump 150 and the chamber 110 .
- the valve 160 maintains air pressure in the internal space 112 of the chamber 110 at a constant value.
- a discharge line 170 is connected to the pump 150 . The contaminants, suctioned by the pump 150 , are discharged to the outside through the discharge line 170 .
- the operating procedure of the haze removal apparatus 100 having the above described configuration is described as follows. First, the photo mask 200 is loaded into the chamber 110 by the mask loader 130 . The loaded photo mask 200 is seated on the bake module 114 . To remove impurities within the chamber 110 , a purge gas, for example, N 2 gas and/or O 2 gas, is fed through the purge gas feed lines 124 and 126 . Then, the pump 150 is operated to discharge all the impurities within the internal space 112 of the chamber 110 to the outside through the discharge line 170 .
- a purge gas for example, N 2 gas and/or O 2 gas
- the temperature of the bake module 114 is raised such that the temperature of the photo mask 200 is more than a predetermined temperature.
- the predetermined temperature is a temperature sufficient to expel impurities (illustratively, ammonia), which have diffused into the photo mast 200 and may cause a haze when expelled from the photo mask 200 .
- a reactant gas (illustratively, Cl 2 gas) is fed through the reactant gas feed line 122 .
- the fed reactant gas reacts with the impurities on the surface of the photo mask 200 , to thereby produce a reaction product (e.g. ammonium chloride (NH 4 Cl)).
- the reaction between the reactant (e.g. Cl 2 gas) and the impurities (e.g. Ammonia) can be efficiently performed.
- the reaction product (e.g., NH 4 Cl), produced via the reaction between the reactant gas and the impurities is discharged to the outside by feeding the purge gas and operating the pump 150 .
- the photo mask 200 After the temperature of the photo mask 200 is lowered, preferably to ambient temperature, the photo mask 200 is unloaded by the mask loader 130 .
- the unloaded photo mask 200 has no impurities (e.g., ammonia) causing a haze.
- residue reactant gas e.g. chlorine
- the photo mask 200 is subjected to an ultra-pure water cleaning or ultra-pure ozone cleaning, for example.
- impurities and residual reactant gases e.g., ammonia and chlorine respectively
- impurities and residual reactant gases capable of causing haze can be easily removed. This prevents the generation of haze during a subsequent exposure process.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
An apparatus for removing haze in a photo mask includes sealed chamber having a bake module disposed therein to support a photo mask, a reactant gas feed line to feed a reactant gas into the chamber, and a discharge device to discharge impurities in the chamber to the outside.
Description
- The priority of Korean patent application number 10-2006-138850, filed on 29 Dec. 2006, the disclosure of which is incorporated by reference in its entirety, is claimed.
- The invention relates to an apparatus nor removing haze in a photo mask and a method for removing haze in a photo mask.
- As semiconductor device become more highly integrated, the sizes of patterns formed on a wafer decrease accordingly. To form such fine patterns, a photolithography process using a photo mask is used. With the photolithography process, a photoresist layer is applied onto a material layer on which a desired pattern will be formed, and light is irradiated onto a part of the photoresist layer through a photo mask having a predetermined, light shielding pattern. Subsequently, the irradiated part of the photoresist layer is removed by a developing process using a developer solution, so as to form a photoresist layer pattern. Thereafter, the photoresist layer pattern is used to expose a part of the material layer such that the exposed part of the material layer is removed by an etching process using the photoresist layer pattern as an etching mask. In this way, a material layer pattern, corresponding to the light shielding pattern of the photo mask, can be formed.
- In the implementation of such a photolithography process, impurities on the photo mask may be transcribed onto the photoresist layer, thus making it impossible to achieve the photoresist layer pattern having a desired profile. Consequently, an unwanted pattern is possibly formed on the material layer. Moreover, if some of the impurities on the photo mask have a size exceeding a critical value, a haze, which is known as a growing defect having a gradually increasing size, may occur. Haze is a main reason for defective pattern transcription.
- For this reason, a conventional method for fabricating a photo mask comprises a cleaning process for removing impurities caused during a patterning process. The cleaning process may be selected from among SPM (sulfuric acid peroxide mixture) cleaning, APM (ammonia peroxide mixture) cleaning, ultra pure water cleaning processes, etc. The SPM cleaning process is for cleaning a photo mask at a predetermined temperature by use of a mixture of sulfuric acid and hydrogen peroxide. Due to the use of sulfuric acid, in this case, sulfate may remain on the photo mask. The APM cleaning process is for cleaning a photo mask at a predetermined temperature by use of a mixture of a very small amount of ammonia, hydrogen peroxide, and ultra-pure water. In this case, ammonia may remain on the photo mask. When occasion demands, rather than being directly formed on the surface of the photo mask, the above mentioned residues may first diffuse into a transparent substrate, a light shielding layer, and a phase shift layer, which constitute the photo mask, and then, erupt from the surface of the photo mask. Although the above described cleaning processes respectively remove the impurities on the surface of the photo mask, the cleaning processes may adversely result in residual ions causing haze.
- The residual ions, caused by the cleaning processes, tend to react with any peripheral, highly reactive materials upon receiving light energy during an exposure process. If the size of the residual ions exceeds a critical value, haze occurs. As described above, the haze causes undesired pattern transcription.
- In one embodiment, the invention provides an apparatus for removing a haze formed in a photo mask including: a chamber having a bake module disposed therein to support the photo mask; a reactant gas feed line to feed a reactant gas into the chamber; and a discharge device to discharge impurities in the chamber to the outside of the chamber.
- The bake module preferably includes a heat generator to increase the temperature of the photo mask above a predetermined temperature.
- The reactant gas feed line preferably communicates with a source of reactant gas, preferably chlorine (Cl2) gas.
- The discharge device preferably includes a pump communicating with the chamber and a discharge line connected to the pump.
- In other embodiment, the invention provides a method for removing a haze in a photo mask including the steps of: loading a photo mask into a chamber; increasing the temperature of the loaded photo mask to above a predetermined temperature; feeding a reactant gas into the chamber, thereby reacting the reactant gas and impurities present on the increased temperature photo mask to form a reaction product; and discharging the reaction product of the reactant gas and the impurities to the outside of the chamber.
- The increased temperature of the photo mask is preferably sufficiently high to allow impurities diffused in the photo mask to erupt from the photo mask.
- The reactant gas is preferably chlorine (Cl2) gas, especially when the impurities include ammonia
- The method preferably further include the step of cleaning the photo mask with an ultra-pure water cleaning process or an ultra-pure ozone cleaning process, thereby removing residual reactant gas remaining after the reaction product is formed.
-
FIG. 1 is a view illustrating an apparatus and a method for removing a haze in a photo mask according to an embodiment of the invention. - An exemplary embodiment of the invention is described below in detail, with reference to the accompanying drawings. However, the invention may be embodied into a variety of different forms, and the scope of the invention is not limited to the following description.
-
FIG. 1 is a view illustrating an apparatus and a method for removing haze in a photo mask according to an embodiment of the invention. Referring toFIG. 1 , anapparatus 100 for removing haze in a photo mask includes achamber 110 having a definedinternal space 112 sealed or isolated from the outside. Abake module 114 is disposed within thechamber 110, for example at the bottom of thechamber 110 as illustrated. Aphoto mask 200, from which haze will be removed, is supported on thebake module 114. When a haze removal process is in progress, thebake module 114 serves to raise the temperature of thephoto mask 200 up to more than a predetermined temperature. For this, a hot wire (not shown) as another heating element may be disposed in thebake module 114. A reactantgas feed line 122 and purgegas feed lines chamber 110, illustrated at the top thereof, opposite thebake module 114. Chlorine (Cl2) gas, or another suitable reactant gas, is fed through the reactinggas feed line 122, into theinternal space 112 of thechamber 110. Also, nitrogen (N2) gas and/or oxygen (O2) gas are fed through the purgegas feed lines internal space 112 of thechamber 110. - A
mask loader 130 is disposed at a sidewall of thechamber 110. Themask loader 130, as illustrated in the drawing byarrows 132, is used to load thephoto mask 200 into thechamber 110 or unload thephoto mask 200 from thechamber 110. Apower module 140 and apump 150 are disposed at an opposite sidewall of thechamber 110. Thepower module 140 supplies electricity to thehaze removing apparatus 100. Thepump 150 discharges contaminants within theinternal space 112 of thechamber 110 to the outside. Avalve 160 is disposed between thepump 150 and thechamber 110. Thevalve 160 maintains air pressure in theinternal space 112 of thechamber 110 at a constant value. Adischarge line 170 is connected to thepump 150. The contaminants, suctioned by thepump 150, are discharged to the outside through thedischarge line 170. - The operating procedure of the
haze removal apparatus 100 having the above described configuration is described as follows. First, thephoto mask 200 is loaded into thechamber 110 by themask loader 130. The loadedphoto mask 200 is seated on thebake module 114. To remove impurities within thechamber 110, a purge gas, for example, N2 gas and/or O2 gas, is fed through the purgegas feed lines pump 150 is operated to discharge all the impurities within theinternal space 112 of thechamber 110 to the outside through thedischarge line 170. - Subsequently, the temperature of the
bake module 114 is raised such that the temperature of thephoto mask 200 is more than a predetermined temperature. In this case, the predetermined temperature is a temperature sufficient to expel impurities (illustratively, ammonia), which have diffused into thephoto mast 200 and may cause a haze when expelled from thephoto mask 200. Thereafter, a reactant gas (illustratively, Cl2 gas) is fed through the reactantgas feed line 122. The fed reactant gas reacts with the impurities on the surface of thephoto mask 200, to thereby produce a reaction product (e.g. ammonium chloride (NH4Cl)). As described above, since the temperature of thephoto mask 200 is regulated such that the impurities, diffused into thephoto mask 200, are erupted from the surface of thephoto mask 200, the reaction between the reactant (e.g. Cl2 gas) and the impurities (e.g. Ammonia) can be efficiently performed. The reaction product (e.g., NH4Cl), produced via the reaction between the reactant gas and the impurities is discharged to the outside by feeding the purge gas and operating thepump 150. - After the temperature of the
photo mask 200 is lowered, preferably to ambient temperature, thephoto mask 200 is unloaded by themask loader 130. The unloadedphoto mask 200 has no impurities (e.g., ammonia) causing a haze. Finally, to remove residue reactant gas (e.g. chlorine) also causing a haze, thephoto mask 200 is subjected to an ultra-pure water cleaning or ultra-pure ozone cleaning, for example. - As apparent from the foregoing description, with an apparatus and a method for removing haze in a photo mask according to the invention, impurities and residual reactant gases (e.g., ammonia and chlorine respectively) capable of causing haze can be easily removed. This prevents the generation of haze during a subsequent exposure process.
Claims (9)
1. An apparatus for removing haze in a photo mask comprising:
a chamber;
a bake module disposed in the chamber to support the photo mask;
a reactant gas feed line to feed a reactant gas into the chamber; and
a discharge device to discharge impurities in the chamber to the outside of the chamber.
2. The apparatus according to claim 1 , wherein the bake module comprises a heat generator to increase a temperature of the photo mask above a predetermined temperature.
3. The apparatus according to claim 1 , further comprising a source of reactant gas communicating with the reactant gas feed line.
4. The apparatus of claim 1 , wherein the reactant gas comprises chlorine (Cl2) gas.
5. The apparatus according to claim 1 , wherein the discharge device comprises a pump communicating with the chamber and a discharge line connected to the pump.
6. A method for removing haze in a photo mask comprising:
loading a photo mask into a chamber;
increasing a temperature of the loaded photo mask above a predetermined temperature;
feeding a reactant gas into the chamber, thereby reacting the reactant gas and impurities present on the increased temperature photo mask to form a reaction product; and
discharging the reaction product of the reactant gas and the impurities to the outside of the chamber.
7. The method according to claim 6 , wherein the impurities present on the photo mask are diffused into the photo mask and the increased temperature of the photo mask is sufficiently high to allow the impurities diffused into the photo mask to erupt from the photo mask.
8. The method according to claim 6 , wherein the impurities comprise ammonia and the reactant gas comprises chlorine (Cl2) gas.
9. The method according to claim 6 , further comprising:
washing the photo mask with a cleaning process selected from the group consisting of an ultra-pure water cleaning and an ultra-pure ozone cleaning, thereby removing residual reactant gas remaining after the reaction product is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/112,862 US7531045B2 (en) | 2006-12-29 | 2008-04-30 | Method for removing haze in a photo mask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2006-138850 | 2006-12-29 | ||
KR1020060138850A KR100831683B1 (en) | 2006-12-29 | 2006-12-29 | Apparatus of removing haze in photomask and method of removing the haze |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/112,862 Division US7531045B2 (en) | 2006-12-29 | 2008-04-30 | Method for removing haze in a photo mask |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080156353A1 true US20080156353A1 (en) | 2008-07-03 |
Family
ID=39582202
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/770,528 Abandoned US20080156353A1 (en) | 2006-12-29 | 2007-06-28 | Apparatus for removing haze in photo mask and method for removing haze in a photo mask |
US12/112,862 Active US7531045B2 (en) | 2006-12-29 | 2008-04-30 | Method for removing haze in a photo mask |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/112,862 Active US7531045B2 (en) | 2006-12-29 | 2008-04-30 | Method for removing haze in a photo mask |
Country Status (3)
Country | Link |
---|---|
US (2) | US20080156353A1 (en) |
KR (1) | KR100831683B1 (en) |
CN (1) | CN101211102B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080202560A1 (en) * | 2006-12-29 | 2008-08-28 | Hynix Semiconductor Inc. | Method for Removing Haze in a Photo Mask |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102033416B (en) * | 2009-09-27 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Method for washing light mask |
KR101870663B1 (en) * | 2011-08-11 | 2018-06-26 | 세메스 주식회사 | Removal apparatus of ions on a photomask |
CN103246159B (en) * | 2012-02-09 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Device for removing vaporific defects on mask and method thereof |
KR102031200B1 (en) * | 2017-12-05 | 2019-10-24 | 주식회사 초록쉼터 | System and method of measuring livestock weight |
CN116755288B (en) * | 2023-05-30 | 2024-02-27 | 常州瑞择微电子科技有限公司 | Device and method for removing sulfate radical of photomask |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020072016A1 (en) * | 2000-12-13 | 2002-06-13 | Applied Materials, Inc. | Substrate cleaning apparatus and method |
US20060137717A1 (en) * | 2004-12-27 | 2006-06-29 | Hynix Semiconductor Inc. | Method for removing impurities grown on a phase shift mask |
US7186301B2 (en) * | 2005-03-21 | 2007-03-06 | Pkl Co., Ltd. | Device and method for cleaning photomask |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4475510B2 (en) * | 2004-06-25 | 2010-06-09 | Hoya株式会社 | Lithographic mask manufacturing method, lithography mask, and lithography mask exposure method |
KR100612330B1 (en) | 2005-05-16 | 2006-08-16 | 주식회사 피케이엘 | Apparatus for cleaning a photo mask |
KR100612329B1 (en) * | 2005-03-21 | 2006-08-16 | 주식회사 피케이엘 | Method for cleaning a photo mask |
KR100831683B1 (en) * | 2006-12-29 | 2008-05-22 | 주식회사 하이닉스반도체 | Apparatus of removing haze in photomask and method of removing the haze |
US7462248B2 (en) * | 2007-02-06 | 2008-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for cleaning a photomask |
-
2006
- 2006-12-29 KR KR1020060138850A patent/KR100831683B1/en not_active IP Right Cessation
-
2007
- 2007-06-28 US US11/770,528 patent/US20080156353A1/en not_active Abandoned
- 2007-08-14 CN CN2007101400849A patent/CN101211102B/en not_active Expired - Fee Related
-
2008
- 2008-04-30 US US12/112,862 patent/US7531045B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020072016A1 (en) * | 2000-12-13 | 2002-06-13 | Applied Materials, Inc. | Substrate cleaning apparatus and method |
US20060137717A1 (en) * | 2004-12-27 | 2006-06-29 | Hynix Semiconductor Inc. | Method for removing impurities grown on a phase shift mask |
US7186301B2 (en) * | 2005-03-21 | 2007-03-06 | Pkl Co., Ltd. | Device and method for cleaning photomask |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080202560A1 (en) * | 2006-12-29 | 2008-08-28 | Hynix Semiconductor Inc. | Method for Removing Haze in a Photo Mask |
US7531045B2 (en) * | 2006-12-29 | 2009-05-12 | Hynix Semiconductor Inc. | Method for removing haze in a photo mask |
Also Published As
Publication number | Publication date |
---|---|
CN101211102A (en) | 2008-07-02 |
US7531045B2 (en) | 2009-05-12 |
KR100831683B1 (en) | 2008-05-22 |
CN101211102B (en) | 2011-11-09 |
US20080202560A1 (en) | 2008-08-28 |
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