US20050268939A1 - Wet cleaning apparatus and methods - Google Patents

Wet cleaning apparatus and methods Download PDF

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Publication number
US20050268939A1
US20050268939A1 US11/027,538 US2753804A US2005268939A1 US 20050268939 A1 US20050268939 A1 US 20050268939A1 US 2753804 A US2753804 A US 2753804A US 2005268939 A1 US2005268939 A1 US 2005268939A1
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Prior art keywords
bath
baths
apr
wafers
spm
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Abandoned
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US11/027,538
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Tac Park
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DB HiTek Co Ltd
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DongbuAnam Semiconductor Inc
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Assigned to DONGBUANAM SEMICONDUCTOR, INC. reassignment DONGBUANAM SEMICONDUCTOR, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PARK, TAE WON
Publication of US20050268939A1 publication Critical patent/US20050268939A1/en
Assigned to DONGBU ELECTRONICS CO., LTD. reassignment DONGBU ELECTRONICS CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: DONGBUANAM SEMICONDUCTOR INC.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Definitions

  • the present disclosure relates to semiconductor fabrication technology and, more particularly, to wet cleaning apparatus and methods.
  • IC chips are fabricated by subjecting a silicon wafer to sequential and repeated processes of photo, etch, ashing, ion diffusion, and thin-film deposition processes.
  • the photo process includes: a deposition step of photoresist having optical sensitivity on the surface of the wafer; a step for placing a reticle having circuit patterns to be manufactured in the wafer; an exposure step for transferring the circuit patterns of the reticle to the deposited photoresist by irradiating the wafer with light having a predetermined wavelength; and a development step for developing the exposed photoresist to form the circuit patterns in the wafer.
  • some portions of layers underlying the photoresist are etched and removed using the photoresist pattern that remains after the development process, and then remaining photoresist pattern is removed by an ashing step.
  • the ashing step can be divided into two steps: a wet ashing step in which chemicals are used in the removal of the patterned photoresist; and a dry ashing set in which a predetermined ashing gas such as plasma and ozone is used to expunge the patterned photoresist.
  • a wet ashing step in which chemicals are used in the removal of the patterned photoresist
  • a dry ashing set in which a predetermined ashing gas such as plasma and ozone is used to expunge the patterned photoresist.
  • FIG. 1 shows known wet cleaning equipment such as post-ashing equipment performing the wet ashing process and post-treatment equipment performing SH cleaning after the Chemical Mechanical Polishing (CMP).
  • CMP Chemical Mechanical Polishing
  • the conventional wet cleaning equipment comprises a Sulfuric Acid Peroxide Mixture (SPM) bath 102 , a Chuck/Clean (C/C) 104 , a Hot Quick Dump Rinse (HQDR) bath 106 , an Ammonium Peroxide Replacement (APR) bath 108 , and drier 110 .
  • SPM Sulfuric Acid Peroxide Mixture
  • C/C Chuck/Clean
  • HQDR Hot Quick Dump Rinse
  • APR Ammonium Peroxide Replacement
  • the SPM bath 102 contains mixture of H 2 SO 4 and H 2 O 2 (SPM)
  • the C/C 104 is for cleaning a robot chuck that carries wafers
  • the APR bath 108 is to clean particles and organic residues remaining on the wafer.
  • the APR bath 108 is structured as a single bath type by which two processes for chemical treatment and rinse are conducted simultaneously.
  • a tank 108 ′ is needed to mix an alkali chemical, H 2 O 2 and hot Deionized Water (DIW).
  • DIW Deionized Water
  • the mixture 112 is heated to 70° C., and is then provided from the tank 108 ′ to the APR bath 108 .
  • the conventional wet cleaning process is performed in the order of SPM cleaning step ⁇ HQDR cleaning step ⁇ APR cleaning step ⁇ dry step. This process normally takes about 38 minutes in these steps per single arrangement of equipment. That is, the throughput time of the conventional wet cleaning process per equipment is about 38 minutes.
  • FIG. 1 is a schematic diagram of conventional wet cleaning equipment.
  • FIG. 2 is a schematic diagram of example disclosed wet cleaning equipment.
  • an APR bath which has significant effect on the throughput time is provided additionally, a capacity of a tank for providing mixed solution to the APR bath is increased, and an SPM bath is added, so that the overall throughput time is cut in half when compared with the throughput time of the conventional equipment.
  • one example of disclosed wet cleaning equipment includes first and second SPM bath 12 a and 12 b, a C/C 14 , a HQDR bath 16 , first and second APR baths 18 a and 18 b, a tank 18 ′, and a drier 20 .
  • the tank 18 ′ mixes alkali chemical, H 2 O 2 and DIW. Further, the tank 18 ′ heats the mixed solution 22 to a processing temperature, and provides the heated mixed solution to the first and second APR baths 18 a and 18 b.
  • the tank 18 ′ has an increased capacity to accommodate the addition of the APR bath by making, for example, the capacity of the deionized water to be 24 liters and the power of the heater to be 24 kilowatts (KW), as compared with the conventional tank ( 108 ′ of FIG. 1 ) of 18 liters of deionized water capacity and 12 KW power of heater.
  • time in preparing for the mixed solution to be provided to the first and second baths 18 a and 18 b is cut in half in comparison with the conventional equipment. For instance, the time for the preparation is reduced to about less than 15 minutes by disclosed example.
  • a wafer cassette (hereinafter ‘first wafer cassette’) having a number of wafers that have patterned circuits formed by the photo process is loaded and conveyed by a loader to the first SPM bath 12 a where H 2 SO 4 and H 2 O 2 is mixed by a predetermined weight ratio (for example, 6:1) to be subjected to the photoresist removal process.
  • second wafer cassette another wafer cassette (hereinafter ‘second wafer cassette’) is loaded to the second SPM bath 12 b, and the photoresist patterned on the second wafers are removed.
  • the loading of the first and second wafer cassette to the first and second SPM baths 12 a and 12 b is conducted with a predetermined time difference.
  • the first wafer cassette after the removal of photoresist at the first SPM bath 12 a, is transferred to the HQDR bath 16 for the wafer cleaning process, and then conveyed to the first APR bath 18 a that contains alkali chemical (e.g., ammonia (NH 4 OH)), H 2 O 2 , and DI water of a predetermined weight ratio of, for example 0.2:1:10 to be subjected to cleaning particles and organic residues and drying in the drier 20 .
  • alkali chemical e.g., ammonia (NH 4 OH)
  • H 2 O 2 e.g., DI water of a predetermined weight ratio of, for example 0.2:1:10 to be subjected to cleaning particles and organic residues and drying in the drier 20 .
  • the second wafer cassette is moved to the HQDR bath 16 for cleaning.
  • the subsequent processing of the second wafer cassette is the same as conducted for the first wafer cassette.
  • the time consumed by cleaning wafers of a wafer cassette is reduced to less than 20 minutes, which amounts to about a half of the conventional time.
  • Disclosed herein are methods and apparatus for wet cleaning that can reduce the throughput time and prevent increased equipment investment.
  • wet cleaning equipment may include first and second Sulfuric Acid Peroxide Mixture (SPM) baths for removing photoresist on semiconductor wafers that are sequentially provided; a Hot Quick Dump Rinse (HQDR) bath for cleaning the wafers conveyed from the first and second baths; first and second Ammonium Peroxide Replacement (APR) baths for cleaning particles and organic residues remaining on the wafers conveyed from the HQDR bath; and a drier for drying the wafers conveyed from the first and second APR bath.
  • the first and second baths include a tank that heats a mixed solution of alkali chemicals, H 2 O 2 , and deionized water to a processing temperature and provides the heated mixed solution to the first and second APR baths.
  • One example disclosed method includes using first and second SPM baths, a HQDR bath, and first and second baths.
  • the first plurality of wafers in a first wafer cassette are cleaned by passing through the first SPM bath, the HQDR bath and the first APR bath, while second plurality of wafers in a second wafer cassette are cleaned by passing through the second SPM bath, the HQDR bath and the second APR bath.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Apparatus for wet cleaning is disclosed. In one example, such an apparatus includes first and second Sulfuric Acid Peroxide Mixture (SPM) baths for removing photoresist on semiconductor wafers that are sequentially provided; a Hot Quick Dump Rinse (HQDR) bath for cleaning the wafers conveyed from the first and second baths; first and second Ammonium Peroxide Replacement (APR) baths for cleaning particles and organic residues remaining on the wafers conveyed from the HQDR bath; and a drier for drying the wafers conveyed from the first and second APR bath.

Description

    TECHNICAL FIELD
  • The present disclosure relates to semiconductor fabrication technology and, more particularly, to wet cleaning apparatus and methods.
    • BACKGROUND
  • Generally, semiconductor integrated circuit (IC) chips are fabricated by subjecting a silicon wafer to sequential and repeated processes of photo, etch, ashing, ion diffusion, and thin-film deposition processes.
  • In this wafer fabrication process, the photo process includes: a deposition step of photoresist having optical sensitivity on the surface of the wafer; a step for placing a reticle having circuit patterns to be manufactured in the wafer; an exposure step for transferring the circuit patterns of the reticle to the deposited photoresist by irradiating the wafer with light having a predetermined wavelength; and a development step for developing the exposed photoresist to form the circuit patterns in the wafer.
  • In the photo process, some portions of layers underlying the photoresist are etched and removed using the photoresist pattern that remains after the development process, and then remaining photoresist pattern is removed by an ashing step.
  • The ashing step can be divided into two steps: a wet ashing step in which chemicals are used in the removal of the patterned photoresist; and a dry ashing set in which a predetermined ashing gas such as plasma and ozone is used to expunge the patterned photoresist.
  • FIG. 1 shows known wet cleaning equipment such as post-ashing equipment performing the wet ashing process and post-treatment equipment performing SH cleaning after the Chemical Mechanical Polishing (CMP).
  • Referring to FIG. 1, the conventional wet cleaning equipment comprises a Sulfuric Acid Peroxide Mixture (SPM) bath 102, a Chuck/Clean (C/C) 104, a Hot Quick Dump Rinse (HQDR) bath 106, an Ammonium Peroxide Replacement (APR) bath 108, and drier 110. In the conventional equipment, the SPM bath 102 contains mixture of H2SO4 and H2O2 (SPM), the C/C 104 is for cleaning a robot chuck that carries wafers, and the APR bath 108 is to clean particles and organic residues remaining on the wafer.
  • Further, the APR bath 108 is structured as a single bath type by which two processes for chemical treatment and rinse are conducted simultaneously. In order to perform the necessary processes with the APR bath 108, it a tank 108′ is needed to mix an alkali chemical, H2O2 and hot Deionized Water (DIW). The mixture 112 is heated to 70° C., and is then provided from the tank 108′ to the APR bath 108.
  • With the conventional equipment having the structure explained above, the conventional wet cleaning process is performed in the order of SPM cleaning step→HQDR cleaning step→APR cleaning step→dry step. This process normally takes about 38 minutes in these steps per single arrangement of equipment. That is, the throughput time of the conventional wet cleaning process per equipment is about 38 minutes.
  • For reducing the processing time and improving the throughput, investment in additional equipment is necessary. However, such purchases increase fabrication cost.
    • BRIEF DESCRIPTION OF DRAWINGS
  • FIG. 1 is a schematic diagram of conventional wet cleaning equipment.
  • FIG. 2 is a schematic diagram of example disclosed wet cleaning equipment.
    • DETAILED DESCRIPTION
  • Disclosed herein are a wet cleaning apparatus and cleaning methods adapted to be used in post-ashing equipment that is employed in removing photoresist.
  • As shown in FIG. 2, an APR bath which has significant effect on the throughput time is provided additionally, a capacity of a tank for providing mixed solution to the APR bath is increased, and an SPM bath is added, so that the overall throughput time is cut in half when compared with the throughput time of the conventional equipment.
  • Referring to FIG. 2, one example of disclosed wet cleaning equipment includes first and second SPM bath 12 a and 12 b, a C/C 14, a HQDR bath 16, first and second APR baths 18 a and 18 b, a tank 18′, and a drier 20. The tank 18′ mixes alkali chemical, H2O2 and DIW. Further, the tank 18′ heats the mixed solution 22 to a processing temperature, and provides the heated mixed solution to the first and second APR baths 18 a and 18 b.
  • The tank 18′ has an increased capacity to accommodate the addition of the APR bath by making, for example, the capacity of the deionized water to be 24 liters and the power of the heater to be 24 kilowatts (KW), as compared with the conventional tank (108′ of FIG. 1) of 18 liters of deionized water capacity and 12 KW power of heater. With this structure of the tank 18′, time in preparing for the mixed solution to be provided to the first and second baths 18 a and 18 b is cut in half in comparison with the conventional equipment. For instance, the time for the preparation is reduced to about less than 15 minutes by disclosed example.
  • Now, the method for cleaning by using the wet cleaning equipment is explained.
  • A wafer cassette (hereinafter ‘first wafer cassette’) having a number of wafers that have patterned circuits formed by the photo process is loaded and conveyed by a loader to the first SPM bath 12 a where H2SO4 and H2O2 is mixed by a predetermined weight ratio (for example, 6:1) to be subjected to the photoresist removal process.
  • During the process for removing the photoresist is performed, another wafer cassette (hereinafter ‘second wafer cassette’) is loaded to the second SPM bath 12 b, and the photoresist patterned on the second wafers are removed.
  • The loading of the first and second wafer cassette to the first and second SPM baths 12 a and 12 b is conducted with a predetermined time difference.
  • The first wafer cassette, after the removal of photoresist at the first SPM bath 12 a, is transferred to the HQDR bath 16 for the wafer cleaning process, and then conveyed to the first APR bath 18 a that contains alkali chemical (e.g., ammonia (NH4OH)), H2O2, and DI water of a predetermined weight ratio of, for example 0.2:1:10 to be subjected to cleaning particles and organic residues and drying in the drier 20.
  • When the first wafer cassette is conveyed to the first APR bath 12 a, the second wafer cassette is moved to the HQDR bath 16 for cleaning. The subsequent processing of the second wafer cassette is the same as conducted for the first wafer cassette.
  • By using the disclosed processing, the time consumed by cleaning wafers of a wafer cassette is reduced to less than 20 minutes, which amounts to about a half of the conventional time.
  • Disclosed herein are methods and apparatus for wet cleaning that can reduce the throughput time and prevent increased equipment investment.
  • According to one particular example, wet cleaning equipment may include first and second Sulfuric Acid Peroxide Mixture (SPM) baths for removing photoresist on semiconductor wafers that are sequentially provided; a Hot Quick Dump Rinse (HQDR) bath for cleaning the wafers conveyed from the first and second baths; first and second Ammonium Peroxide Replacement (APR) baths for cleaning particles and organic residues remaining on the wafers conveyed from the HQDR bath; and a drier for drying the wafers conveyed from the first and second APR bath. In one example, the first and second baths include a tank that heats a mixed solution of alkali chemicals, H2O2, and deionized water to a processing temperature and provides the heated mixed solution to the first and second APR baths.
  • One example disclosed method includes using first and second SPM baths, a HQDR bath, and first and second baths. The first plurality of wafers in a first wafer cassette are cleaned by passing through the first SPM bath, the HQDR bath and the first APR bath, while second plurality of wafers in a second wafer cassette are cleaned by passing through the second SPM bath, the HQDR bath and the second APR bath.
  • Although certain apparatus constructed in accordance with the teachings of the invention have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers every apparatus, method and article of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.

Claims (3)

1. An apparatus for performing removal of photoresist and SH cleaning, comprising:
first and second Sulfuric Acid Peroxide Mixture (SPM) baths to remove photoresist on semiconductor wafers that are sequentially provided;
a Hot Quick Dump Rinse (HQDR) bath to clean the wafers conveyed from the first and second SPM baths;
first and second Ammonium Peroxide Replacement (APR) baths to clean particles and organic residues remaining on the wafers conveyed from the HQDR bath; and
a drier to dry the wafers conveyed from the first and second APR baths.
2. An apparatus as defined by claim 1, further including a tank that heats a mixed solution of alkali chemicals, H2O2 and deionized water to a processing temperature and provides the heated mixed solution to the first and second APR baths.
3. A method for wet cleaning by using first and second SPM baths and a HQDR bath, wherein first plurality of wafers in a first wafer cassette are cleaned by passing through the first SPM bath, the HQDR bath and the first APR bath, while second plurality of wafers in a second wafer cassette are cleaned by passing through the second SPM bath, the HQDR bath and the second APR bath.
US11/027,538 2004-06-08 2004-12-30 Wet cleaning apparatus and methods Abandoned US20050268939A1 (en)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
US20080171449A1 (en) * 2007-01-15 2008-07-17 Chao-Ching Hsieh Method for cleaning salicide
US20100132746A1 (en) * 2008-11-28 2010-06-03 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
CN109830436A (en) * 2017-11-23 2019-05-31 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic device
US20210249257A1 (en) * 2018-06-07 2021-08-12 Acm Research (Shanghai) Inc. Apparatus and method for cleaning semiconductor wafers
US20210335621A1 (en) * 2019-02-05 2021-10-28 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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KR100965220B1 (en) * 2007-12-28 2010-06-22 주식회사 동부하이텍 Method of manufacturing a semiconductor device
KR102029445B1 (en) 2019-05-09 2019-10-08 (주)도아테크 Apparatus for stripping photoresist

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US6161969A (en) * 1998-10-20 2000-12-19 Tokyo Electron Limited Apparatus for processing a substrate
US20010049204A1 (en) * 2000-06-05 2001-12-06 Osamu Kuroda Liquid processing apparatus and liquid processing method
US6519498B1 (en) * 2000-03-10 2003-02-11 Applied Materials, Inc. Method and apparatus for managing scheduling in a multiple cluster tool
US20030201001A1 (en) * 2002-04-30 2003-10-30 Hsin-Ta Chien Wet cleaning device

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US6161969A (en) * 1998-10-20 2000-12-19 Tokyo Electron Limited Apparatus for processing a substrate
US6519498B1 (en) * 2000-03-10 2003-02-11 Applied Materials, Inc. Method and apparatus for managing scheduling in a multiple cluster tool
US20010049204A1 (en) * 2000-06-05 2001-12-06 Osamu Kuroda Liquid processing apparatus and liquid processing method
US20030201001A1 (en) * 2002-04-30 2003-10-30 Hsin-Ta Chien Wet cleaning device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080171449A1 (en) * 2007-01-15 2008-07-17 Chao-Ching Hsieh Method for cleaning salicide
US20100132746A1 (en) * 2008-11-28 2010-06-03 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
US7905963B2 (en) * 2008-11-28 2011-03-15 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
US20110120506A1 (en) * 2008-11-28 2011-05-26 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
US8875720B2 (en) 2008-11-28 2014-11-04 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
CN109830436A (en) * 2017-11-23 2019-05-31 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic device
US20210249257A1 (en) * 2018-06-07 2021-08-12 Acm Research (Shanghai) Inc. Apparatus and method for cleaning semiconductor wafers
US12068149B2 (en) * 2018-06-07 2024-08-20 Acm Research (Shanghai) Inc. Apparatus and method for cleaning semiconductor wafers
US20210335621A1 (en) * 2019-02-05 2021-10-28 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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KR20050116584A (en) 2005-12-13

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