US20060037698A1 - Systems and methods for processing microfeature workpieces - Google Patents
Systems and methods for processing microfeature workpieces Download PDFInfo
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- US20060037698A1 US20060037698A1 US10/922,024 US92202404A US2006037698A1 US 20060037698 A1 US20060037698 A1 US 20060037698A1 US 92202404 A US92202404 A US 92202404A US 2006037698 A1 US2006037698 A1 US 2006037698A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
- This application relates to systems and methods for processing microfeature workpieces.
- Microfeature devices, such as semiconductor devices, imagers and displays, are generally manufactured on and/or in microfeature workpieces. A variety of chemical processes are used to manufacture and analyze (e.g., quality control testing) the microfeature devices. As feature sizes decrease and performance increases, it is becoming ever more important to control the composition of the materials. As such, microfeature workpieces are highly sensitive to variations or contamination during such chemical processes.
- Etching is one common chemical process that is used in manufacturing operations. In a typical application, a workpiece may be etched to form vias, pattern a blanket conductive layer to form conductive lines, or form other structures on the workpiece. There are generally two types of etching processes—“dry” etching and “wet” etching. Most dry etching operations use a high-energy plasma that selectively removes portions of the microfeature workpiece. Wet etching processes generally immerse the workpiece in a tank that contains a liquid etching solution (i.e., an etchant).
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FIG. 1 schematically illustrates a conventionalwet etching system 10 in which a microfeature workpiece W is immersed in a processing fluid within atank 20. Thesystem 10 can include afluid inlet 30 at a lower portion of thetank 20 for providing aflow 40 of processing fluid. Thesystem 10 can further include adiffuser plate 50 having a plurality ofapertures 52 positioned between theinlet 30 and the workpiece W. Thediffuser plate 50 creates a more uniform flow of processing fluid across the workpiece W. - One problem with the
conventional system 10 is thatbubbles 42 entrained in the flow of processing fluid pass across the workpiece W. Thebubbles 42 are typically generated by an impeller (not shown) that pumps the processing fluid, but they can also be generated by other parts of thesystem 10. Thebubbles 42 in theflow 40 of the processing fluid tend to collect on a bottom surface of thediffuser plate 50 and migrate toward the perimeter of thediffuser plate 50. As thebubbles 42 move laterally across thediffuser plate 50,several bubbles 42 pass through theapertures 52 and across the workpiece W. Thebubbles 42 that pass across the workpiece W interrupt the chemical reaction between the processing fluid and the workpiece W. This generally causes streaking defects across the surface of the workpiece W and/or otherwise damages the workpiece W. Accordingly, there is a need to improve the wet etching process to mitigate the effects caused by bubbles in the flow of processing fluid. -
FIG. 1 is a schematic illustration of a conventional wet etching system in accordance with the prior art. -
FIG. 2 is a partially schematic side cross-sectional view of a microfeature workpiece processing system in accordance with one embodiment of the invention. -
FIG. 3A is a cross-sectional bottom isometric view of a flow conditioning plate in the microfeature workpiece processing system ofFIG. 2 . -
FIG. 3B is a side cross-sectional view illustrating specific details of a portion of the flow conditioning plate shown inFIG. 3A . -
FIG. 4A is a cross-sectional bottom isometric view of a flow conditioning plate for use with the microfeature workpiece processing system ofFIG. 2 in accordance with another embodiment of the invention. -
FIG. 4B is a side cross-sectional view of a flow conditioning plate for use with the microfeature workpiece processing system ofFIG. 2 in accordance with yet another embodiment of the invention. -
FIG. 5 is a cross-sectional bottom isometric view of a flow conditioning plate for use with the microfeature workpiece processing system ofFIG. 2 in accordance with yet another embodiment of the invention. -
FIG. 6 is a side cross-sectional view of a flow conditioning plate for use with the microfeature workpiece processing system ofFIG. 2 in accordance with yet another embodiment of the invention. -
FIG. 7 is a side cross-sectional view of a flow conditioning plate for use with the microfeature workpiece processing system ofFIG. 2 in accordance with still another embodiment of the invention. - A. Overview
- Various embodiments of the present invention provide apparatuses and methods for processing microfeature workpieces. The term “microfeature workpiece” is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other devices are fabricated. For example, microfeature workpieces can be semiconductor wafers (e.g., silicon or gallium arsenide wafers), dielectric substrates (e.g., glass or ceramic), and many other types of materials. The microfeature workpieces typically have submicron features with dimensions of 0.05 micron or greater. Several embodiments in accordance with the invention are set forth in
FIGS. 2-7 and the following text to provide a thorough understanding of particular embodiments of the invention. A person skilled in the art will understand, however, that the invention may have additional embodiments, or that the invention may be practiced without several of the details of the embodiments shown inFIGS. 2-7 . - One embodiment of the invention provides a system for processing a microfeature workpiece. The system comprises a processing chamber having a workpiece processing site configured to receive a microfeature workpiece and a main inlet through which a processing fluid can flow into the processing chamber. The system further comprises a plate in the chamber between the main inlet and the workpiece processing site. The plate has a first side generally facing the main inlet and a second side opposite the first side. The plate further includes a plurality of passageways extending through the flow conditioning plate from the first side to the second side. The individual passageways include an inlet portion projecting from the first side of the plate by a separation distance.
- The plate can have several different configurations. In one embodiment, for example, the first side of the plate has a V-shaped cross-sectional profile with upwardly inclined surfaces. The first side of the plate, however, can also be generally planar, arcuate and/or pyramidal. The inlet portions can also have various configurations. In several embodiments, for example, the inlet portions are raised features having cylindrical shapes. In other embodiments, however, the inlet portions can be conical or rectilinear.
- Another aspect of the invention is directed toward methods of processing microfeature workpieces. One embodiment of such a method comprises positioning a microfeature workpiece in a processing chamber. The method continues by directing a processing fluid toward a diffuser plate in the chamber. The method further includes obstructing bubbles from passing through passageways in the diffuser plate before the processing fluid contacts the microfeature workpiece. In several embodiments, many bubbles are obstructed from passing through the passageways by blocking bubbles moving along an underside of the flow conditioning plate from entering inlet openings of the passageways. For example, individual passageways can include raised features projecting from the first side of the flow conditioning plate to space the inlet openings away from the plate in a manner that inhibits bubbles from entering the inlet openings.
- B. Microfeature Workpiece Processing Systems
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FIG. 2 is a partially schematic side cross-sectional view of a microfeatureworkpiece processing system 100 in accordance with one embodiment of the invention. Thesystem 100 generally includes aprocessing chamber 110, afluid inlet 120 at a bottom portion of thechamber 110, and aconduit 140 coupled to theinlet 120. Thesystem 100 also includes apump 130 coupled to theinlet 120 via afluid inlet line 132. Theconduit 140 receives processing fluid from theinlet 120 and directs a flow of the processing fluid toward a workpiece W in theprocessing chamber 110. Thesystem 100 also includes aplate 150 in thechamber 110 for conditioning the flow of processing fluid upstream from the workpiece W. As explained below, theplate 150 distributes the flow of processing fluid and inhibits bubbles from passing across the workpiece W. - The
processing chamber 110 in the illustrated embodiment includes aninner vessel 112 having a bottom 114 that together define an interior 116 adapted to receive a processing fluid, e.g., a liquid etchant, for use in processing the workpiece W. Theinner vessel 112 also includes anoverflow opening 118, such as a weir, where the processing fluid exits theinner vessel 112. In operation, thepump 130 drives the processing fluid to thefluid inlet 120 via theinlet line 132. The processing fluid flows from theconduit 140 through a plurality ofnozzles 142. The processing fluid then flows through or around theplate 150, past the workpiece W, and out via theoverflow 118. - The
flow conditioning plate 150 is positioned in theinner vessel 112 of theprocessing chamber 110 between theconduit 140 and the workpiece W. Theplate 150 is generally transverse to aflow 145 of the processing fluid from theconduit 140. Theplate 150 is made from a material that is chemically compatible with the processing fluid to be received in theinterior 116 of theprocessing chamber 110. - The
plate 150 in the illustrated embodiment includes afirst side 151 generally facing theconduit 140 and asecond side 152 opposite thefirst side 151. In the illustrated embodiment, thefirst side 151 has a firstinclined section 153 a and a secondinclined section 153 b that are angled upwardly from an apex 155. Theplate 150 shown inFIG. 2 accordingly has a generally V-shaped cross-sectional profile. In other embodiments, however, theplate 150 may have other configurations. For example, thefirst side 151 can be a single, planar section inclined upwardly from one side of thechamber 110 to another side. Theplate 150 also includes a plurality of passageways 154 (e.g., vias) through which the processing fluid can flow. The inclined sections 153 a-b of thefirst side 151 and thepassageways 154 modify the flow of processing fluid exiting the nozzles to provide a uniform flow moving upwardly to the workpiece W. -
FIG. 3A is a cross-sectional bottom isometric view of theplate 150 andFIG. 3B is a side cross-sectional view of thearea 3B shown inFIG. 3A . Referring toFIGS. 2-3B together, thepassageways 154 extend from a point below thefirst side 151 of theplate 150 to thesecond side 152 of theplate 150. Thepassageways 154 are generally arranged in a matrix across theentire plate 150 to create a desired flow pattern of processing fluid for processing the workpiece W. -
Individual passageways 154 include aninlet portion 156 projecting from thefirst side 151 of theplate 150 such that anopening 157 of theinlet portion 156 is upstream from thefirst side 151 of theplate 150 relative to theflow 145 of processing fluid. In the illustrated embodiment, theindividual inlet portions 156 are protrusions formed integrally with theplate 150. In alternative embodiments, however, theindividual inlet portions 156 may be discrete components aligned with correspondingpassageways 154 and secured to thefirst side 151 of theflow conditioning plate 150 using a suitable adhesive or press fit into thepassageways 154. Theindividual inlet portions 156 generally project from thefirst side 151 of theplate 150 by a distance greater than an expected bubble size within thesystem 100. For example, if bubbles as large as one-eighth of an inch are present in thesystem 100, theinlet portions 156 should project from thefirst side 151 of theplate 150 by one-eighth of an inch or more. In the illustrated embodiment, theindividual inlet portions 156 are cylindrical protrusions. In other embodiments, however, theinlet portions 156 may be rectilinear, conical, or another suitable shape. - Referring to
FIGS. 2 and 3 B, a plurality of bubbles 146 (FIG. 3B ) entrained in theflow 145 of processing fluid can impinge upon thefirst side 151 of theplate 150. In the conventional system illustrated above inFIG. 1 , thebubbles 42 collected along the bottom of thediffuser plate 50 easily pass through thepassageways 52 and cause streaks and/or defects on the workpiece W. Conversely, theplate 150 with the raisedinlets 156 inhibits thebubbles 146 on thefirst side 151 of theplate 150 from passing through thepassageways 154. More specifically, because theopenings 157 of theinlet portions 156 are spaced apart from thefirst side 151 of theplate 150, thebubbles 146 flow upwardly and outwardly across the inclined sections 153 a-b of thefirst side 151 without passing through thepassageways 154. Thebubbles 146 are accordingly obstructed from entering theinlet openings 157 and diverted toward an outboard edge of theplate 150 so that they pass through theinterior 116 of theprocessing chamber 110 without contacting the workpiece W. Therefore, one advantage of thesystem 100 illustrated inFIGS. 2-3B is that the workpiece is exposed to fewer bubbles compared to conventional plates to reduce contamination and/or damage to the workpiece W. - Another feature of the
flow conditioning plate 150 illustrated inFIGS. 2-3B is that the V-shaped profile of the inclined sections 153 a-b at thefirst side 151 of theplate 150 directsbubbles 146 collected alongfirst side 151 toward the perimeter of theplate 150. Accordingly, thebubbles 146 should not aggregate on thefirst side 151 of theplate 150 during the processing of the workpiece W, but rather thebubbles 146 should readily migrate upward and outward along thefirst side 151 of theplate 150. - C. Additional Embodiments of Flow Conditioning Plates
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FIGS. 4A-7 illustrate various configurations of flow conditioning plates in accordance with different embodiments of the invention. For example,FIG. 4A is a cross-sectional bottom isometric view of aplate 450 for use with the microfeature workpiece processing system 100 (FIG. 2 ). Theplate 450 in this embodiment is generally planer rather than having the V-shaped cross-sectional profile of theplate 150 illustrated inFIGS. 2 and 3 A. Theplate 450 includes afirst side 451 generally facing the conduit 140 (FIG. 2 ), and asecond side 452 opposite the first side. Theplate 450 further includes a plurality ofpassageways 454 extending from thefirst side 451 of theplate 450 to thesecond side 452 of theplate 450.Individual passageways 454 include aninlet portion 456 projecting from thefirst side 451 of theplate 450 toward the conduit 140 (FIG. 2 ). Theinlet portions 456 are raised features that can have generally the same configuration as theinlet portions 156 described above with respect toFIGS. 2-3B . -
FIG. 4B is a side cross-sectional view of aplate 470 in accordance with another embodiment of the invention. Theplate 470 includes afirst side 471 and asecond side 472 generally opposite thefirst side 471. Theplate 470 shown inFIG. 4B differs from theplate 150 described above in that thefirst side 471 of theplate 470 is generally arcuate. For example, in the illustrated embodiment thefirst side 471 of theplate 470 has a generally semi-circular cross-sectional profile. In other embodiments, however, thefirst side 471 of the plate can be generally hemispherical, elliptical, a portion of a constant radius circle, and/or otherwise curved. Theplate 470 further includes a plurality ofpassageways 474 extending from thefirst side 471 to thesecond side 472 of theplate 470. Theindividual passageways 474 include aninlet portion 476 generally similar to theinlet portions 156 described above with respect toFIGS. 2-3B . -
FIG. 5 is a cross-sectional bottom isometric view of aplate 550 for use with the microfeature workpiece processing system 100 (FIG. 2 ) in accordance with yet another embodiment of the invention. Theplate 550 includes afirst side 551 and asecond side 552 generally opposite thefirst side 551. Theplate 550 in the illustrated embodiment differs from theplate 150 described above with respect toFIG. 2 in that thefirst side 551 of theplate 550 has a generally pyramidal shape, as opposed to the V-shaped cross-sectional profile of theplate 150. Theplate 550 includes a plurality ofpassageways 554 extending from thefirst side 551 to thesecond side 552 of theplate 550. Theindividual passageways 554 include aninlet portion 556 generally similar to theinlet portions 156 described above with respect toFIGS. 2-3B . -
FIG. 6 is a side cross-sectional view of aplate 650 in accordance with yet another embodiment of the invention. Theplate 650 can include afirst side 651 generally facing the conduit 140 (FIG. 2 ) and asecond side 652 opposite thefirst side 651. Theplate 650 further includes a plurality ofpassageways 654 extending from thefirst side 651 to thesecond side 652 of theplate 650. Theindividual passageways 654 include aninlet portion 656 projecting from thefirst side 651 of theplate 650 in a direction opposite to thesecond side 652. The primary difference between theplate 650 inFIG. 6 and theplate 150 illustrated inFIGS. 2-3B is that theplate 650 includes abubble removal system 660 at anoutboard edge 653 of theplate 650. - The
bubble removal system 660 in the embodiment illustrated inFIG. 6 includes anentrapment portion 662 at eachoutboard edge 653 of theplate 650. Theentrapment portion 662 is generally a cavity, such as an elongated trench, extending along theoutboard edge 653 of theplate 650. Theentrapment portion 662 may have other configurations or be positioned at other locations on theplate 650 in other embodiments. Thebubble removal system 660 further includes avent line 664 in fluid communication with theentrapment portion 662. In operation, bubbles move across thefirst side 651 of theplate 650 toward theoutboard edge 653. Theentrapment portion 662 catches the bubbles, and thevent line 664 transports the bubbles out of the processing chamber 110 (FIG. 2 ). One advantage of theplate 650 in the embodiment illustrated inFIG. 6 is that bubbles will not build up in the processing fluid because theplate 650 removes bubbles from the system. -
FIG. 7 is a side cross-sectional view of aplate 750 for conditioning the flow in accordance with yet another embodiment of the invention. Theplate 750 can include afirst side 751 generally facing the conduit 140 (FIG. 2 ) and asecond side 752 opposite thefirst side 751. Theplate 750 can further include a plurality ofpassageways 754 extending from thefirst side 751 to thesecond side 752. Theindividual passageways 754 can include aninlet portion 756 projecting from thefirst side 751 of theplate 750. The primary difference between theplate 750 shown inFIG. 7 and theplate 150 illustrated inFIGS. 2-3B is thatindividual passageways 754 in theplate 750 also include bubble traps 760. In the illustrated embodiment, for example, the bubble traps 760 are generally U-shaped traps configured to capture bubbles (not shown) traveling through thepassageways 754. In alternative embodiments, the bubble traps 760 may have other shapes and/or configurations. - One advantage of the bubble traps 760 in the illustrated embodiment is that they further mitigate possible contamination of the workpiece W by trapping any bubbles (not shown) that may inadvertently pass through the
passageways 754. Referring toFIG. 2 , for example, the majority of bubbles 146 (FIG. 2 ) in theflow 145 are diverted along thefirst side 151 of the plate 150 (FIG. 2 ); nonetheless, bubbles substantially aligned with an individual passageway 154 (FIG. 2 ) can pass through the corresponding passageway and possibly contact the workpiece W (FIG. 2 ). The bubble traps 760, however, prevent the bubbles (not shown) passing through thepassageways 754 from contacting and/or contaminating the workpiece W. - In a further aspect of this embodiment, a plurality of
vent lines 762 coupled to the bubble traps 760 carry bubbles (not shown) out of theindividual passageways 754 and away from the workpiece W. For example, in the embodiment shown inFIG. 7 thevent lines 762 transport bubbles (not shown) entirely out of the processing chamber 110 (FIG. 2 ). In other embodiments, thevent lines 762 may direct trapped bubbles to another location within thesystem 100. Additionally, in still another alternative embodiment, theplate 750 can also include the bubble removal system shown inFIG. 6 . - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. For example, various aspects of any of the foregoing embodiments can be combined in different combinations. Additionally, a second plate having a pattern of holes can be positioned between the inlet and any of the diverting plates described above with reference to
FIGS. 2-7 such that the holes in the second plate are laterally offset from the holes in the diverting plates. This arrangement directs bubbles passing through the holes in the second plate to the inclined surface of the diverting plate such that bubbles are less likely to pass directly through one of the holes in the diverting plate. Accordingly, the invention is not limited except as by the appended claims.
Claims (60)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US10/922,024 US7582180B2 (en) | 2004-08-19 | 2004-08-19 | Systems and methods for processing microfeature workpieces |
US11/619,130 US7544624B2 (en) | 2004-08-19 | 2007-01-02 | Systems and methods for processing microfeature workpieces |
Applications Claiming Priority (1)
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US10/922,024 US7582180B2 (en) | 2004-08-19 | 2004-08-19 | Systems and methods for processing microfeature workpieces |
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US11/619,130 Division US7544624B2 (en) | 2004-08-19 | 2007-01-02 | Systems and methods for processing microfeature workpieces |
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US20060037698A1 true US20060037698A1 (en) | 2006-02-23 |
US7582180B2 US7582180B2 (en) | 2009-09-01 |
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US11/619,130 Active US7544624B2 (en) | 2004-08-19 | 2007-01-02 | Systems and methods for processing microfeature workpieces |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050279452A1 (en) * | 2004-06-18 | 2005-12-22 | Innolux Display Corp. | Etching reaction device with protrusions |
US20070079932A1 (en) * | 2001-12-07 | 2007-04-12 | Applied Materials, Inc. | Directed purge for contact free drying of wafers |
US20070102400A1 (en) * | 2004-08-19 | 2007-05-10 | Micron Technology, Inc. | Systems and methods for processing microfeature workpieces |
WO2007143476A2 (en) * | 2006-06-02 | 2007-12-13 | Applied Materials, Inc. | Apparatus and method for single substrate processing |
US20080000495A1 (en) * | 2001-12-07 | 2008-01-03 | Eric Hansen | Apparatus and method for single substrate processing |
CN108447805A (en) * | 2018-03-30 | 2018-08-24 | 无锡尚德太阳能电力有限公司 | Wet method chain type etching groove feed liquor structure |
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DE202006018111U1 (en) * | 2006-07-25 | 2007-02-08 | Lang, Marcus | Wet-chemical treatment device for raw material e.g., for circuit board, wafer, has sprayed jet interruption device positioned to be guided discontinuously onto raw material |
JP7381370B2 (en) * | 2020-03-05 | 2023-11-15 | キオクシア株式会社 | Semiconductor manufacturing equipment and semiconductor device manufacturing method |
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Also Published As
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US20070102400A1 (en) | 2007-05-10 |
US7582180B2 (en) | 2009-09-01 |
US7544624B2 (en) | 2009-06-09 |
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