US20060007085A1 - Liquid crystal display panel with built-in driving circuit - Google Patents
Liquid crystal display panel with built-in driving circuit Download PDFInfo
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- US20060007085A1 US20060007085A1 US11/139,663 US13966305A US2006007085A1 US 20060007085 A1 US20060007085 A1 US 20060007085A1 US 13966305 A US13966305 A US 13966305A US 2006007085 A1 US2006007085 A1 US 2006007085A1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
Definitions
- This invention relates to a liquid crystal display, and more particularly to a liquid crystal display panel having a built-in driving circuit.
- a liquid crystal display (LCD) device can be used as a display monitor for a television and a computer.
- LCD liquid crystal display
- light transmittance of a liquid crystal is controlled using an electric field to thereby display a picture.
- the LCD includes a liquid crystal display panel having liquid crystal cells arranged in a matrix type.
- a driving circuit is provided for driving the liquid crystal display panel.
- FIG. 1 is a block circuit diagram showing a configuration of a related art liquid crystal display device.
- a related art LCD device includes a liquid crystal display panel 13 having (m ⁇ n) liquid crystal cells Clc arranged in a matrix, m data lines D 1 to Dm and n gate lines G 1 to Gn crossing each other and thin film transistors TFT provided at crossing of the data lines and the gate lines, a data driving circuit 11 for applying a data to the data lines D 1 to Dm of the liquid crystal display panel 13 , and a gate driving circuit 12 for applying a scanning pulse to the gate lines G 1 to Gn.
- the liquid crystal display panel 13 is formed by joining a thin film transistor substrate to a color filter substrate.
- the thin film transistor substrate is provided with a thin film transistor array.
- the color filter substrate is provided with a color filter array.
- a liquid crystal layer is provided between the thin film transistor substrate and the color filter substrate.
- the color filter substrate is provided with a black matrix, a color filter and a common electrode.
- Polarizers having polarization axes perpendicular to each other are respectively attached onto the thin film transistor substrate and the color filter substrate of the liquid crystal display panel 13 , and an alignment film for determining a free-tilt angle of the liquid crystal is further provided on the inner side surface coming in touch with the liquid crystal layer.
- the data lines D 1 to Dm and the gate lines G 1 to Gn provided at the thin film transistor substrate of the liquid crystal display panel 13 cross each other perpendicularly.
- the thin film transistor TFT provided at each crossing of the data lines D 1 to Dm and the gate lines G 1 to Gn applies a data voltage supplied via the data lines D 1 to Dn to a pixel electrode of the liquid crystal cell Clc in response to a scanning pulse from the gate line G 1 to Gn.
- the liquid crystal cell Clc rotates a liquid crystal having a dielectric anisotropy in response to a potential difference between a data voltage supplied to the pixel electrode and a common voltage supplied to the common electrode to thereby control light transmittance.
- each liquid crystal cell Clc is provided with a storage capacitor Cst.
- the storage capacitor Cst is provided between the pixel electrode and a pre-stage gate line or between the pixel electrode and a common line (not shown), thereby holding constant a data voltage charged in the liquid crystal cell Clc.
- the data driving circuit 11 converts an input digital video data into an analog data voltage using a gamma voltage.
- the data driving circuit 11 applies the converted analog data voltage to the data lines D 1 to Dm.
- the gate driving circuit 12 sequentially applies a scanning pulse to the gate lines GL 1 to GLn to thereby select a horizontal line of the liquid crystal cell Clc to be supplied with a data.
- FIG. 2 is a block diagram showing a configuration of a gate driving circuit shown in FIG. 2 according to the related art.
- the gate driving circuit 12 includes a shift register having an n-number of stages, 1 st to nth, connected in a cascade to an input line of a start pulse Vst to sequentially supply a scanning pulse to gate lines G 1 to Gn.
- the 1 st to nth stages shown in FIG. 2 are commonly supplied with a clock signal CLK, along with high-level and low-level driving voltages VDD and VSS, and with a start pulse Vst or an output signal of the previous stage.
- the 1 st stage outputs a scanning pulse to the first gate line GL 1 in response to the start pulse Vst and the clock signal CLK. Further, the 2 nd to nth stages sequentially outputs a scanning pulse to the second to nth gate lines G 2 to Gn, respectively, in response to an output signal from the corresponding previous stage and the clock signal CLK.
- the 1 st to nth stages have the sane circuit configuration. At least two clock signals having different phases are used for providing the clock signal CLK.
- FIG. 3 is a detailed circuit diagram of the 1 st stage of the related art gate driving circuit shown in FIG. 2 .
- the 1 st stage includes an output buffer and a controller.
- the output buffer includes a pull-up NMOS transistor NT 6 and a pull-down NMOS transistor NT 7 .
- the pull-up NMOS transistor NT 6 output a first clock signal CLK 1 to an output line under control of a Q node.
- the pull-down NMOS transistor NT 7 output a low-level driving voltage VSS to the output line under control of a QB node.
- the controller includes NMOS transistors NT 1 to NT 5 for controlling the Q node and the QB node.
- the 1 st stage is supplied with high-level and low-level voltages VDD and VSS, and a start pulse Vst.
- Four clock signals CLK 1 to CLK 4 with different phases are available, three of which, CLK 1 , CLK 3 and CLK 4 are supplied to the 1 st stage.
- FIG. 4 is a driving waveform diagram for the 1 st stage shown in FIG. 3 .
- the NMOS transistors NT 1 and NT 2 are turned on by high-level voltages from the start pulse Vst and the fourth clock signal CLK 4 to thereby pre-charge the high-level voltage of the start pulse Vst into the Q node.
- the pull-up NMOS transistor NT 6 is turned on by a high-level voltage pre-charged into the Q node to thereby supply a low-level voltage from the first clock signal CLK 1 to an output line, that is, the first gate line G 1 .
- the QB node is driven low by the NMOS transistor NT 5 , which is turned on by the start pulse Vst.
- the NMOS transistor NT 3 B and the pull-down NMOS transistor NT 7 are turned off.
- the NMOS transistors NT 3 A and NT 4 also are turned off by a low-level voltage from the third clock signal CLK 3 .
- the NMOS transistors NT 1 and NT 2 are turned off by low-level voltages from the start pulse Vst and the fourth clock signal CLK 4 , so that the Q node floats to a high state, while the pull-up NMOS transistor NT 6 remains on. Then, a high-level voltage from the first clock signal CLK 1 bootstraps the Q node due to a parasitic capacitance caused by an overlap between the gate electrode and the drain electrode of the pull-up NMOS transistor NT 6 . Thus, the Q node voltage jumps higher to turn on the pull-up NMOS transistor NT 6 , thereby rapidly supplying a high-level voltage from the first clock signal CLK 1 to the first gate line G 1 .
- the NMOS transistors NT 1 and NT 2 are turned off by the low-level voltages from the start pulse Vst and the fourth clock signal CLK 4 , so that the Q node floats to a high state, while the pull-up NMOS transistor NT 6 remains on.
- the pull-up NMOS transistor NT 6 remains on to thereby supply a low-level voltage from the first clock signal CLK 1 to the first gate line G 1 .
- the NMOS transistors NT 3 A and NT 4 are turned on by a high-level voltage from the third clock signal CLK 3 , so that the Q node is discharged into a low-level voltage while the QB node is charged into a high-level voltage.
- the high-level voltage at the QB node turns on the NMOS transistor NT 3 B to accelerate the discharge of the Q node, and the pull-down NMOS transistor N 7 is turned on to supply a low-level voltage to the first gate line G 1 .
- the NMOS transistors NT 4 and NT 5 are turned off by a low-level voltage from the third clock signal CLK 3 .
- the QB node floats to a high state.
- the pull-down NMOS transistor N 7 remains on to supply a low-level voltage to the first gate line G 1 . Further, the pull-down NMOS transistor NT 7 remains on continuously until the high-level voltage of the start pulse Vst is supplied.
- FIG. 5 is a schematic plan view of a liquid crystal display panel with a built-in gate driving circuit according to the related art.
- the related art gate driving circuit having the above-mentioned configuration is built in a liquid crystal display panel 10 by using an amorphous silicon thin film transistor.
- a size of an output buffer of each stage, for example, the pull-up and pull-down NMOS transistors NT 6 and NT 7 is set to have a very large value due to a low mobility. This is due to the fact that the scanning pulse is directly applied via the output buffer, as described above, and that a channel width of the output buffer has a large impact on the life of the liquid crystal display panel 10 .
- the output buffer must have a channel width of more than thousands of millimeters (mm).
- the channel width can be more than ten thousands of microns ( ⁇ m) in order to drive a medium-to-large liquid crystal display panel of more than ten (10) inches.
- an area occupied by the built-in gate driving circuit 30 must be enlarged.
- product standardization limits how much the circuit area can be enlarged within the non-display area. Accordingly, a bi-directional driving method has been proposed, which provides first and second gate driving circuits 30 and 40 at each outer side of a display area 20 as shown in FIG. 5 to concurrently drive the gate lines of the display area 20 at each side thereof.
- FIG. 6 is a plan view of the related art liquid crystal display panel with a built-in gate driving circuit of FIG. 5 .
- the i-th gate line Gi concurrently receives scanning pulses from the ith stage 32 i from the first gate driving circuit 30 and the i-th stage 42 i from the second gate driving circuit 40 , thereby applying a data signal on the data line D, via the thin film transistor TFT connected to the gate line Gi, to the pixel electrode 44 .
- the (i+1)-th gate line Gi+1 is driven by scanning pulses concurrently received from the (i+1)-th stage 32 i +1 from the first gate driving circuit 30 and the (i+1)-th stage 42 i +1 from the second gate driving circuit 40 .
- each of the stages 32 i and 32 i +1 from the first gate driving circuit 30 , or each of the stages 42 i and 42 i +1 from the second gate driving circuit 40 includes an output buffer 54 having pull-up and pull-down transistors NT 6 and NT 7 , and a controller 52 having transistors NT 1 to NT 5 for controlling the output buffer 54 .
- a line on glass (LOG) area 50 is provided with a plurality of LOG-type signal lines for supplying a plurality of clock signals and power signals.
- the LOG area 50 is located at the outer portion of the stages 32 i and 32 i +1 of the first gate driving circuit 30 and the outer portion of the stages 42 i and 42 i +1 of the second driving circuit 40 . Also, a sealant (not shown) is coated onto the outer portion of the LOG area 50 for joining the thin film transistor substrate with the color filter substrate. Since the sealant contains a glass fiber that can cause corrosion when in contact with food, the first and second gate driving circuits 30 and 40 and the LOG area 50 are located at the inner side thereof so that they do not overlap with the sealant.
- a line width of the circuit area at which the first and second gate driving circuits 30 and 40 can be provided is limited to the non-display area at the inner side of the sealant.
- a pitch for one stage is limited to one liquid crystal cell.
- the size of the output buffer 54 is not enlarged. Accordingly, a scheme capable of enlarging the area of the built-on driving circuit is needed.
- the present invention is directed to a liquid crystal display panel having a built-in driving circuit that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- An object of the present invention to provide a driving circuit that reduces a distortion of a scanning pulse waveform in a liquid crystal display panel.
- Another object of the present invention is to provide a driving circuit that prolongs the life of a liquid crystal display panel.
- a liquid crystal display panel includes liquid crystal cells forming a matrix in a display area of the liquid crystal display panel; odd and even gate driving circuits provided at an outer area of the display area, the display area being positioned between the odd and even gate driving circuits, the odd driving circuit including a plurality of odd stages, the even driving circuit including a plurality of even stages; a plurality of gate lines, including even gate lines and odd gate lines in the liquid crystal cell matrix, the odd gate lines being driven by the odd driving circuit, and the even gate lines being driven by the even driving circuit, wherein a pitch of each of the odd stages and the even stages corresponds to size larger than a pitch of the liquid crystal cell.
- a liquid crystal display panel in another aspect, includes liquid crystal cells forming a matrix in a display area of the liquid crystal display panel; odd and even gate driving circuits provided at an outer area of the display area, the display area being positioned between the odd and even gate driving circuits, the odd driving circuit including a plurality of odd stages, the even driving circuit including a plurality of even stages; a plurality of gate lines, including even gate lines and odd gate lines in the liquid crystal cell matrix, the odd gate lines being driven by the odd driving circuit, and the even gate lines being driven by the even driving circuit, wherein a start pulse of each of the odd stages includes an output signal from a previous one of the even stages, and a start pulse of each of the even stages includes an output signal of a previous one of the odd stages.
- FIG. 1 is a block circuit diagram showing a configuration of a related art liquid crystal display device.
- FIG. 2 is a block diagram showing a configuration of a gate driving circuit shown in FIG. 2 according to the related art.
- FIG. 3 is a detailed circuit diagram of the 1 st stage of the related art gate driving circuit shown in FIG. 2 .
- FIG. 4 is a driving waveform diagram for the 1 st stage shown in FIG. 3 .
- FIG. 5 is a schematic plan view of a liquid crystal display panel with a built-in gate driving circuit according to the related art.
- FIG. 6 is a plan view of the related art liquid crystal display panel with a built-in gate driving circuit of FIG. 5 .
- FIG. 7 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a first embodiment of the present invention.
- FIG. 8 is a schematic view for a method of driving odd and even gate driving circuits according to the first embodiment of the present invention.
- FIG. 9 is a schematic view for a method of driving odd and even gate driving circuits according to a second embodiment of the present invention.
- FIG. 10 is an exemplary circuit diagram of a first driving stage of the built-in gate driving circuit.
- FIG. 11 is an exemplary waveform diagram for driving the bi-phase gate driving circuit of FIG. 10 .
- FIG. 12 is an exemplary circuit diagram of the first and third driving stages of the built-in gate driving circuit.
- FIG. 13 is an exemplary waveform diagram for driving the four-phase gate driving circuit of FIG. 12 .
- FIG. 14 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a fourth embodiment of the present invention.
- FIG. 15 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention.
- FIG. 16 is an exemplary circuit diagram of a driving stage of the built-in gate driving circuit of FIG. 15 .
- FIG. 17 shows exemplary waveforms applied to the built-in gate driving circuit of FIG. 15 .
- FIG. 18 is another exemplary circuit diagram of a driving stage of the built-in gate driving circuit of FIG. 15 .
- FIG. 19 is a schematic view for another exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention.
- FIG. 20 shows exemplary waveforms applied to the built-in gate driving circuit of FIG. 19 .
- FIG. 7 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a first embodiment of the present invention.
- a thin film transistor substrate includes a display area 74 , and odd and even gate driving circuits 70 o and 70 e built in a non-display area at each side of the display area 74 .
- the display area 74 is provided with gate lines G and data lines D crossing each other. Crossings of the gate lines G and the data lines G define pixel regions in the display area 74 .
- a thin film transistor TFT is connected at a crossing of one of the gate lines G and one of the data lines D.
- Liquid crystal cells (not shown) are provided in each pixel region.
- a pixel electrode 76 of the liquid crystal cell in each pixel region is connected to the corresponding thin film transistor TFT in that pixel region.
- the pixel regions, and the liquid crystal cells within the pixel regions, are arranged in a matrix.
- the odd and even gate driving circuits 70 o and 70 e provided in the non-display area drive the gate lines. Specifically, the odd and even gate driving circuits 70 o and 70 e drive corresponding odd gate lines Go and even gate lines Ge.
- the odd gate driving circuit 70 o includes an odd stage 72 o for driving the odd gate line Go, while the even gate driving circuit 70 e includes an even stage 72 e for driving the even gate line Ge.
- each of the odd stage 72 o and the even stage 72 e includes an output buffer 64 including pull-up and pull-down transistors NT 6 and NT 7 , and a controller 62 including first to fifth transistors NT 1 and NT 5 for controlling the output buffer 64 .
- a line on glass (LOG) area 60 is located at an outer portion of each of the odd stage 72 o and the even stage 72 e .
- the LOG area 60 is provided with a plurality of LOG-type signal lines (not shown) for supplying a plurality of clock signals and power signals (not shown in FIG. 7 ).
- a pitch of each of the stages 72 o and 72 e can be increased to correspond to two liquid crystal cells. Accordingly, the size of the output buffer 64 can be increased by more than 50% of that of the controller 62 , which occupies a relatively small area in proportion to such an enlarged area of each stage 72 o and 72 e . For instance, the controller 62 in each of the stages 72 o and 72 e occupies an area corresponding to a pitch of one liquid crystal cell, while the output buffer 64 may cover an area corresponding to a pitch of two liquid crystal cells.
- a channel width of the output buffer 64 can be increased to more than ten thousands microns (10,000 ⁇ m) required for the medium-to-large panel of more than 10 inches.
- FIG. 8 is a schematic view for a method of driving odd and even gate driving circuits according to the first embodiment of the present invention.
- the odd driving circuit 70 o includes 1 st, 3 rd, 5 th, . . . , (n ⁇ 1)-th odd stages.
- the even driving circuit 70 e includes 2 nd, 4 th, 6 th, . . . , n-th even stages.
- Each of the 1 st, 3 rd, 5 th . . . , and (n ⁇ 1)-th odd stages receives an input scanning pulse as a start pulse from the preceding odd stage and shifts it sequentially, thereby driving the odd gate lines G 1 , G 3 , G 5 , .
- each of the 2 nd, 4 th, 6 th, . . . , and n-th even stages receives an input scanning pulse as a start pulse from the preceding even stage and shifts it sequentially, thereby driving the even gate lines G 2 , G 4 , G 6 , . . . , and Gn.
- the gate lines G 1 , G 2 , G 3 , G 4 , . . . , Gn ⁇ 1, and Gn can be sequentially driven.
- the odd gate lines G 1 , G 3 , G 5 , . . . , and Gn ⁇ 1 have an opened structure with respect to the even gate driving circuit 70 e
- the even gate lines G 2 , G 4 , G 6 , . . . , and Gn have an opened structure with respect to the odd gate driving circuit 700 .
- FIG. 9 is a schematic view for a method of driving odd and even gate driving circuits according to a second embodiment of the present invention.
- the odd driving circuit 700 includes 1 st, 3 rd, 5 th, (n ⁇ 1)-th odd stages.
- the even driving circuit 70 e includes 2 nd, 4 th, 6 th, . . . , n-th even stages.
- Each of the 2 nd, 4 th, 6 th, . . . , and n-th even stages from the even driving circuit 70 e receives an input scanning pulse as a start pulse from the preceding 1 st, 3 rd, 5 th, . . .
- each of the 1 st, 3 rd, 5 th, . . . , and (n ⁇ 1)-th odd stages from the odd driving circuit 70 o receives an input scanning pulse as a start pulse from the preceding 2 nd, 4 th, 6 th, . . . , or n-th even stage, respectively, and shifts it sequentially, thereby driving the odd gate lines G 1 , G 3 , G 5 , . . . , and Gn ⁇ 1.
- the first odd stage 1 st applies a scanning pulse to the first odd gate line G 1 and applies the same scanning pulse to the first even stage 2 nd connected to the first odd gate line G 1 as a start pulse.
- the first even stage 2 nd applies a scanning pulse to the first even gate line G 2 and applies the same scanning pulse to the second odd stage 3 rd as a start pulse.
- the second odd stage 3 rd applies a scanning pulse to the second odd gate line G 3 and applies the same scanning pulse as a start pulse to the second even stage 4 th.
- the first stage 1 st of the odd gate driving circuit 70 o is the only stage that receives an externally supplied start pulse Vst, whereas the odd and even gate driving circuits 70 o and 70 e are similarly supplied with at least two clock signals.
- FIG. 10 is an exemplary circuit diagram of a first driving stage of the built-in gate driving circuit.
- the first stage 1 st includes an output buffer having, for example, a pull-up NMOS transistor NT 6 for outputting a first clock signal C 1 to an output line under control of a Q node and a pull-down NMOS transistor NT 7 for outputting a low-level driving voltage VSS to the output line under control of a QB node.
- the first stage 1 st also includes a controller having, for example, a plurality of NMOS transistors N 1 , N 3 a -N 3 c , N 4 , and N 5 for controlling the Q node and the QB node.
- Such a 1 st stage is supplied with high-level and low-level voltages Vdd and Vdd and a start pulse Vst.
- the first stage 1 st is also provided with first and second clock signals C 1 and C 2 having different phases as shown in FIG. 11 .
- the circuit diagram of FIG. 10 implements a bi-phase gate driving shift register circuit.
- FIG. 11 is an exemplary waveform diagram for driving the bi-phase gate driving circuit of FIG. 10 .
- the transistor N 1 is turned on by high-level voltages provided by the start pulse Vst and the second clock signal C 2 .
- the transistor N 1 pre-charges the high-level voltage provided by the start pulse Vst into the Q node.
- the pull-up NMOS transistor N 6 is turned on by the high-level voltage pre-charged into the Q node.
- the pull-up NMOS transistor N 6 supplies a low-level voltage from the first clock signal C 1 to an output line, for example, the first gate line G 1 .
- the NMOS transistors N 3 b and N 3 c are turned on by the start pulse Vst, thereby forcing the QB node into a low state.
- the pull-down NMOS transistors N 5 and N 7 are turned off.
- the first NMOS transistor N 1 is turned off by low-level voltages from the start pulse Vst and the second clock signal C 2 .
- the Q node floats into a high state while the pull-up NMOS transistor N 6 remains on.
- a high-level voltage from the first clock signal C 1 bootstraps the Q node due to a parasitic capacitance caused by an overlap between a gate electrode and a drain electrode of the pull-up NMOS transistor N 6 .
- the voltage at the bootstrapped Q node jumps higher.
- the higher voltage at the bootstrapped Q node turns on the pull-up NMOS transistor N 6 , which supplies the high-level voltage from the first clock signal C 1 to the first gate line G 1 .
- the NMOS transistor N 3 a is turned on by a gate output A from a next stage, and the NMOS transistor N 4 is turned on by a high-level voltage of the second clock signal C 2 .
- the Q node is discharged to a low-level voltage while the QB node is charged to a high-level voltage.
- the NMOS transistor N 5 is turned on by the high-level voltage at the QB node, thereby accelerating the discharge of the Q node.
- the pull-down NMOS transistor N 7 is also turned on, thereby applying a low-level voltage to the first gate line G 1 .
- FIG. 12 is an exemplary circuit diagram of the first and third driving stages of the built-in gate driving circuit.
- the first and third stages, 1 st and 3 rd are driven by a driving waveform generated from a four-phase gate driving shift register circuit.
- FIG. 13 is an exemplary waveform diagram for driving the four-phase gate driving circuit of FIG. 12 .
- transistor N 11 in the first stage 1 st is turned on by a high-level voltage from a start pulse V 1 st provided to the first stage 1 st.
- the turned-on transistor N 11 transistor pre-charges the high-level voltage from the start pulse V 1 st into a Q 1 node of the first stage 1 st.
- a pull-up NMOS transistor N 16 is turned on by the high-level voltage pre-charged into the Q 1 node.
- the turned-on NMOS transistor N 16 supplies a low-level voltage from the first clock signal C 1 to an output line, for example, the first gate line G 1 .
- the NMOS transistor N 11 from the first stage 1 st is turned off by a low-level voltage from the start pulse V 1 st.
- the Q 1 node floats to a high state, while the pull-up NMOS transistor N 16 remains on.
- the high-level voltage from the first clock signal C 1 bootstraps the Q 1 node due to a parasitic capacitance caused by an overlap between the gate electrode and the drain electrode of the pull-up NMOS transistor N 16 .
- the Q 1 node jumps to a higher voltage, thereby turning on the pull-up NMOS transistor N 16 .
- the turned-on NMOS transistor N 16 rapidly supplies the high-level voltage from the first clock signal C 1 to the first gate line G 1 .
- the high-level voltage from the first clock signal C 1 is applied via a line connected to the third stage 3 rd as a start pulse V 3 st of the third stage 3 rd.
- the third stage 3 rd supplies the start pulse V 3 st one horizontal period prior to an application of the third and fourth clock signals C 3 and C 4 to thereby pre-charge a Q 3 node of the third stage 3 rd during the second time period B.
- the NMOS transistor N 11 is turned off by low-level voltages from the start pulse V 1 st and the first clock signal C 1 .
- the Q 1 node floats to a high state while the pull-up NMOS transistor N 16 remains on.
- the low-level voltage from the first clock signal C 1 is applied to the first gate line G 1 .
- the transistor N 14 is turned on by the applied second clock signal C 2 .
- a high-level voltage Vdd is applied to the QB 1 node, which becomes high.
- the transistor N 15 and the pull-down NMOS transistor N 17 are turned on by the high-level voltage at the QB 1 node.
- the transistor N 15 discharges a voltage charged in the Q 1 node
- the pull-down transistor N 17 provides a low-level voltage to the first gate line G 1 and remove a noise generated on the first gate line G 1 .
- the transistor N 13 a is turned on by an output A generated from the second stage (not shown) via the second gate line G 2 (not shown) or fed back from the third stage 3 rd.
- the turned-on transistor N 13 a rapidly discharges a voltage charged at the Q 1 node along with the transistor N 15 .
- the transistor N 31 is turned off by the low-level voltage from the start pulse V 3 st, forcing the Q 3 node of the third stage 3 rd to float to a high state.
- a high-level voltage of the third clock signal C 3 is applied to the third stage 3 rd.
- the high-level voltage of the third clock signal C 3 is applied, via the transistor N 36 , to the third gate line G 3 from the third stage 3 rd.
- the output of the third stage 3 rd on the third gate line G 3 is applied as a start pulse V 5 st to the fifth stage 5 th stage (not shown).
- a high-level voltage of the fourth clock signal C 4 is applied to the third stage 3 rd.
- the NMOS transistor N 34 is turned on by the high-level voltage of the fourth clock signal C 4 .
- the QB 3 node floats to a high state, and the pull-down NMOS transistor N 37 remains on.
- the pull-down NMOS transistor N 37 applies a low-level voltage to the third gate line G 3 and cancels a noise generated on the third gate line G 3 .
- the transistor N 35 is turned on to discharge a voltage charged in the Q 3 node.
- the transistor N 33 a is turned on by an output B generated from the fourth stage 4 th (not shown) via the second gate line G 2 (not shown) or supplied from the fifth stage 5 th. Then, transistor N 32 rapidly discharges a voltage charged at the Q 3 node along with the transistor N 35 . Further, the pull-down NMOS transistors N 17 and N 37 remain continuously on until the high-level voltages of the start pulse V 1 st and V 3 st, respectively, are supplied, thereby preventing noise from being generated on the first gate line G 1 and the third gate line G 3 .
- the liquid crystal display panel includes a four-phase driving circuit. As shown in FIG. 12 , a Q node of such a driving circuit is charged during three horizontal periods in accordance with the third and fourth clock signals C 3 and C 4 applied to the 3 rd stage. Thus, the output lines are charged sufficiently long to avoid gate driving error problems caused by a short charging time in high resolution applications. The Q nodes in subsequent stages of the driving circuit are also charged during three horizontal periods similarly to the 1 st stage.
- FIG. 14 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a fourth embodiment of the present invention.
- a thin film transistor substrate includes a display area 144 , and odd and even gate driving circuits 140 o and 140 e built in a non-display area at each side of the display area 144 .
- the display area 144 is provided with an n-number of gate lines G and an m-number of data lines D crossing each other.
- the number n of gate lines is equal to m/2, that is half of the m-number of data lines D.
- Crossings of the gate lines G and the data lines G define pixel regions in the display area 144 .
- a thin film transistor TFT is connected at a crossing of one of the gate lines G and one of the data lines D.
- Liquid crystal cells (not shown) are provided in each pixel region.
- a pixel electrode 146 of the liquid crystal cell in each pixel region is connected to the corresponding thin film transistor TFT in that pixel region.
- the pixel regions, and the liquid crystal cells within the pixel regions, are arranged in a matrix.
- the odd and even gate driving circuits 140 o and 140 e provided in the non-display area drive the gate lines. Specifically, the odd and even gate driving circuits 140 o and 140 e drive corresponding odd gate lines Go and even gate lines Ge.
- the odd gate driving circuit 140 o includes an odd stage 142 o for driving the odd gate line Go, while the even gate driving circuit 140 e includes an even stage 142 e for driving the even gate line Ge. As shown in FIGS.
- each of the odd stage 142 o and the even stage 142 e includes output buffers 145 o and 145 e having pull-up transistor NT 6 and pull-down transistors NT 7 _O and NT 7 _E, and a controllers 143 o and 143 e having a plurality of NMOS transistors for controlling the output buffers 145 o and 145 e .
- a LOG area 141 is located at the outer portion of each of the odd stage 142 o and the even stage 142 e .
- the LOG area 141 is provided with a plurality of LOG-type signal lines for supplying a plurality of clock signals and power signals.
- a pitch of each of the stages 142 o and 142 e can be increased to correspond to two liquid crystal cells. Accordingly, the size of the output buffers 145 o and 145 e can be increased by more than 50% of that of the controllers 143 o and 143 e , each which occupies a relatively small area in proportion to such an enlarged area of each stage 142 o and 142 e .
- the controllers 143 o and 143 e in each of the stages 142 o and 142 e occupies an area corresponding to a pitch of one liquid crystal cell, while each of the output buffers 145 o and 145 e may cover an area corresponding to a pitch of two liquid crystal cells.
- the relative position of the controller 143 o and the output buffer 145 o in the odd stage 142 o is horizontally rotated by 180 degrees with respect to the controller 143 e and the output buffer 145 e in the even stage 142 e.
- a gate driving circuit having two pull-down transistors NT 7 _O and NT_ 7 E is provided at each stage.
- the gate driving circuit alternately operates the two pull-down transistors NT 7 _O and NT 7 _E in each time period to thereby prevent deterioration caused by a gate-bias stress of the pull-down transistors NT 7 _O and NT 7 _E. So the gate driving circuit may operate error-free and has a longer life.
- FIG. 15 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention.
- the odd driving circuit 140 o includes 1 st, 3 rd, 5 th, . . . , (n-1)-th odd stages.
- the even driving circuit 140 e includes 2 nd, 4 th, 6 th, . . . , n-th even stages.
- the first stage 1 st receives as a start pulse the start signal Vst.
- n-th receives as a start pulse an output signal Vg_i ⁇ 1 from the previous stage i ⁇ 1th stage.
- the second stage 2 nd receives start signal Vg_ 1 from the first stage.
- the third stage 3 rd receives the start signal Vg_ 2 from the second stage 2 nd.
- each of the even and odd stages responds to one of first to fourth clock signals C 1 , C 2 , C 3 and C 4 .
- the one clock signal is supplied by delaying one clock period to apply the output signal Vg_j synchronized to the clock signal to the gate line Gi via an output buffer and a level-shifter (not shown).
- n receives an output signal Vg_i+1 from a next stage (i+1)-th as a reset pulse.
- the last stage n-th is provided with a reset pulse obtained from a dummy stage (not shown) by delaying one clock signal.
- j is 0, 1, 2, 3, . . . , m/4.
- FIG. 16 is an exemplary circuit diagram of a driving stage of the built-in gate driving circuit of FIG. 15 .
- FIG. 17 shows exemplary waveforms applied to the built-in gate driving circuit of FIG. 15 .
- first to third clock signals C 1 to C 3 are low, and a start signal Vst or a high level from a previous stage output signal Vg_i ⁇ 1 is supplied to a gate electrode of the first, the transistors NT 1 , NT 5 _O and NT 5 _E, thereby turning-on the transistors NT 1 , NT 5 _O and NT 5 _E.
- a low level voltage from a low level supply voltage Vss is supplied to QB_O and QB_E nodes via the transistors NT 5 _O and NT 5 _E.
- the QB_O and QB_E nodes are discharged during the A time period of the frame period.
- the QB_O and QB_E nodes are held at a low level.
- the QB_O and QB_E nodes remain low, discharging the QB_O and QB_E nodes, thereby turning-off the NT 3 _O, NT 3 _E, NT 7 _O, and NT 7 _E.
- a high level supply voltage Vdd is applied to a Q node.
- the Q node is charged with a mid-level voltage Vm.
- the mid-level voltage Vm charged on the Q node turns-on the transistors NT 5 a _O and NT 5 a _E connected to the Q node.
- the start signal Vst or the output signal Vg_i ⁇ 1 from a preceding stage is applied to a gate terminal of transistors NT 5 _O and NT 5 _E.
- Transistors NT 5 _O and NT 5 _E are turned-on.
- the turned-on transistors NT 5 _O, NT 5 _E, NT 5 a _O, NT 5 a _E form a discharge path for the QB_O and the QB_E nodes.
- the QB_O and the QB_E nodes are held at a low level.
- transistor NT 6 is turned-on by the mid-level voltage Vm at the Q node.
- a current stage output signal Vg_i holds the voltage low.
- a high level supply voltage Vdd 0 is applied to and turns-on transistors NT 4 _O and NT 5 b _E during an odd frame period.
- transistor NT 4 _O is turned-on, the high level voltage is supplied to the QB_O node. Then, the voltage on the QB_O node increases to the high level voltage. But, the QB_O node remains low because transistors NT 5 _O and NT 5 a _O have wider channel widths than transistor NT 4 _O. Thus, the turned-on transistor NT 4 _O continually remains on during the odd frame period.
- the transistor NT 5 b _E forms a discharge path for the QB_E node. After the time period A, although the transistors NT 5 _E, NT 5 a _E are turned-off, the transistor NT 5 b _E continually remains on due to the high level supply voltage Vdd_O applied during the odd frame period, to thereby continually form the discharge path of the QB_E node during the odd frame period.
- the first clock signal C 1 is inverted from the low level voltage to a high level voltage, and the start signal Vst is inverted from the high level voltage to a low level voltage.
- transistor NT 1 When transistor NT 1 is turned-off, the discharge path of the Q node is intercepted. A voltage charged in a parasitic capacitance between the drain electrode and the gate electrode of transistor NT 6 is added to the mid-level voltage Vm at the Q node, the voltage of the Q node further increases more than a threshold voltage of the sixth transistor NT 6 . In other words, the voltage of the Q node increases to a voltage higher than the voltage of the Q node during the time period A due to bootstrapping.
- transistor NT 6 is turned-on, and an output signal Vg_i increases due to a voltage of the first clock signal C 1 while transistor NT 6 is on.
- transistor NT 6 is inverted to the high level voltage.
- the start signal Vst is inverted to a low level voltage to turn-off transistors NT 5 _O and NT 5 _E, but the transistors NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node remain high, thus on. Accordingly, a discharge path is maintained at the QB_O and the QB_E nodes, thereby holding the voltage low.
- the first clock signal C 1 is inverted from the high level voltage to a low level voltage.
- the high level voltage from of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT 3 a to turn-on transistor NT 3 a .
- transistor NT 3 a When transistor NT 3 a is turned-on, the high level voltage on the Q node is discharged through transistor NT 3 a , so that the voltage on the Q node is inverted to a low level voltage.
- the low level voltage applied at the Q node turns-off transistors NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the QB_O and the QB_E nodes.
- the high level voltage Vdd_O is supplied to the QB_O node via the turned-on transistor NT 4 _O during the odd frame period.
- the high level voltage supplied to the QB_O node turns-on transistors NT 3 _O and NT 7 _O, whose gate electrodes are connected to the QB_O node.
- An additional discharge path is formed through the turned-on transistor NT 3 a by turning on transistor NT 3 _O, and the output signal Vg_i is inversed to the low level voltage by turning on transistor NT 7 _O.
- the next stage output signal Vg_i+1 is inverted to the low level voltage, to thereby turn-off the transistor NT 3 a .
- the QB_O node continually remains at the high level voltage provided by high level supply voltage Vdd_O supplied through the transistor NT 4 _O during the remaining odd frame period. Accordingly, the voltage at the Q node and the output signal Vg_i remains low during the remaining odd frame period.
- the QB_E node remains at the low level voltage provided by the transistor NT 5 b _E, which is turned-on by high level supply voltage Vdd_O provided during the odd frame period.
- first to third clock signals C 1 to C 3 are low, and the start signal Vst or a high level voltage output signal Vg_i ⁇ 1 from a previous stage is supplied to a gate electrode of the transistors NT 1 , NT 5 _O and NT 5 _E, to thereby turn-on the transistors NT 1 , NT 5 _O and NT 5 _E.
- low level supply voltage Vss supplies a low level voltage to the QB_O and the QB_E nodes via the transistors NT 5 _O and NT 5 _E. Accordingly, the QB_O and QB_E nodes are discharged, and QB_O and QB_E nodes are held at a low level voltage. The QB_O and QB_E nodes remain low, thereby holding transistors NT 3 _O, NT 3 _E, NT 7 _O, and NT 7 _E at a low level. Accordingly, a discharge path of the Q node is intercepted.
- transistor NT 1 When transistor NT 1 is turned-on, supply voltage Vdd applies a high level voltage to a Q node, to thereby charge the Q node with a mid-level voltage Vm.
- the mid-level voltage Vm charged on the Q node turns on the transistors NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node.
- the transistors NT 5 a _O and NT 5 a _E provides a discharge path for the turned-on transistors NT 5 _O and NT 5 _E through the QB_O and the QB_E nodes by holding the QB_O and the QB_E nodes at a low level.
- transistor NT 6 When transistor NT 6 is turned-on, because the first clock signal C 1 remains low, a low level output signal is supplied to an output Vg_i of a current stage.
- a high level voltage of an even frame high level supply voltage Vdd_E turns-on the ( 4 _E)th and the ( 5 b _O)th transistors NT 4 _E and NT 5 b _O.
- the ( 5 b _O)th transistor NT 5 b _O continually maintains the turn-on state because of the high level supply voltage Vdd_E supplied during the even frame period, to thereby continually form the discharge path of the QB_O node during the even frame period.
- the first clock signal C 1 is inverted from a low level voltage to the high level voltage
- the start signal Vst is inverted from the high level voltage to the low level voltage.
- the discharge path of the Q node is intercepted.
- the voltage of the Q node increases higher than a threshold voltage of the transistor NT 6 .
- a bootstrapping effect pulls the voltage at the Q node higher than the voltage of the Q node during the A period.
- the transistor NT 6 is turned-on and an output signal Vg_i increases due to the first clock signal C 1 applied by turned-on transistor NT 6 .
- the start signal Vst is inverted to the low level voltage to turn-off the transistors NT 5 _O and NT 5 _E, but transistors NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node held at a high level voltage, remain on. Accordingly, the discharge path of the QB_O and the QB_E nodes is maintained, to thereby maintain the low level voltage.
- the first clock signal C 1 is inverted from a high level voltage to a low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of the transistor NT 3 a to turn-on the transistor NT 3 a .
- transistor NT 3 a is turned-on, the high level voltage on the Q node is discharged through the transistor NT 3 a , so that the voltage on the Q node is inverted to the low level voltage.
- the low level voltage at the Q node turns-off the transistors NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the QB_O and the QB_E nodes. Accordingly, high level supply voltage Vdd_E applies a high level signal to the QB_E node via the turned-on transistor NT 4 _E.
- the high level voltage supplied to the QB_E node turns-on the transistors NT 3 _E and NT 7 _E, whose gate electrodes are connected to the QB_E node.
- An additional discharge path is formed by the turned-on transistor NT 3 a by turning on the transistor NT 3 _E, and the output signal Vg_i is inverted to the low level voltage by turning on transistor NT 7 _E.
- the QB_O node maintains the low level voltage provided by transistor NT 5 b _O, turned-on high level supply voltage Vdd_E during the even frame period.
- the next stage output signal Vg_i+1 is inverted to the low level voltage, to thereby turn-off transistor NT 3 a .
- the QB_O node continually maintains the high level voltage provided by the high level supply voltage Vdd_E through the transistor NT 4 _O during the remaining even frame period. Accordingly, the voltage of the Q node and the output signal Vg_j remains low during the remaining even frame period.
- FIG. 18 is another exemplary circuit diagram of a driving stage of the built-in gate driving circuit of FIG. 15 .
- the driving waveform of FIG. 16 can be applied to FIG. 18 . Accordingly, an operation of each stage applying the circuit of the FIG. 18 will be described in detail in reference to the ( 4 j +1)th stage (herein, j is 1, 2, 3, . . . , m ⁇ 4 ).
- first clock signal to third clock signal C 1 to C 3 are low, and the start signal Vst or a high level voltage of the previous stage output signal Vg_i ⁇ 1 is supplied to a gate electrode of transistors NT 1 , NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E, to thereby turn on the transistors NT 1 , NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E.
- a low level supply voltage Vss supplies a low level voltage to A_O and A_E nodes via the transistors NT 43 _O and NT 43 _E.
- the A_O and A_E nodes are discharged, thereby maintaining the low level voltage at the A_O and the A_E nodes.
- the low level voltage on the A_O and the A_E nodes turns-off transistors NT 42 _O and NT 42 _E.
- the high level supply voltage Vdd_O applies a high level voltage to the QB_O node during the odd frame period.
- the high level supply voltage Vdd_E applies a high level voltage to the QB_E node during the even frame period.
- a low level supply voltage Vss applies a low level voltage to the QB_O and the QB_E nodes via transistors NT 5 _O and NT 5 _E.
- the QB_O and QB_E nodes are discharged, so that a low level voltage is maintained at the QB_O and QB_E nodes.
- the QB_O and QB_E nodes maintain the low level voltage, so that the discharge of the QB_O and QB_E nodes turns off the (3_O)th, the (3_E)th, the (7_O)th, and the (7_E)th transistors NT 3 _O, NT 3 _E, NT 7 _O, and NT 7 _E.
- a high level voltage from a high level supply voltage Vdd is supplied to a Q node, to thereby charge the Q node with a mid-level voltage Vm.
- the mid-level voltage Vm charged on the Q node turns-on transistors NT 44 _O, NT 44 _E, NT 5 a _O, NT 5 a _E, and NT 6 on the Q node.
- the transistors NT 44 _O and NT 44 _E provide a discharge path to the turned-on transistors NT 43 _O and NT 43 _E through the A_O and the A_E nodes, so that the A_O and the A_E nodes remain at a low level.
- transistors NT 5 a _O and NT 5 a _E additionally secure a discharge path for the turned-on transistors NT 5 _O and NT 5 _E through the QB_O and the QB_E nodes, so that the QB_O and the QB_E nodes remain at a low level.
- transistor NT 6 When transistor NT 6 is turned-on, because the first clock signal C 1 remains low, an output signal from the low level voltage is supplied to an output Vg_i of a current stage.
- a high level voltage from an odd frame high level supply voltage Vdd_O turns-on transistors NT 41 _O and NT 5 b _E.
- transistor NT 41 _O When transistor NT 41 _O is turned-on, the high level voltage of the odd frame high level supply voltage Vdd_O is supplied to a A_O node and then the high level voltage is maintained at the A_O node. But, as described above, transistors NT 43 _O and NT 44 _O provide a discharge path to keep the A_O node at a low level voltage.
- Transistor NT 5 b _E provides a discharge path for the QB_E node. Following the time period A, although the transistors NT 5 _O, NT 5 _E, NT 5 a _O, NT 5 a _E are turned-off, transistor NT 5 b _E is held continually on by the odd frame high level supply voltage Vdd_O during the odd frame period. Thus, the discharge path of the QB_E node remains active during the odd frame period.
- the first clock signal C 1 is inverted from the low level voltage to the high level voltage
- the start signal Vst is inverted from the high level voltage to the low level voltage.
- the discharge path of the Q node is intercepted.
- the voltage of the Q node jumps higher than a threshold voltage of the transistor NT 6 .
- a bootstrapping effect causes the voltage at the Q node to increase to a higher voltage than during the time period A.
- transistor NT 6 is turned-on and an output signal Vg_i is increased by the first clock signal C 1 applied through the turn-on transistor NT 6 , to thereby be inverted to a high level voltage.
- the start signal Vst is inverted to the low level voltage to turn-off the transistors NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E, but transistors NT 44 _O, NT 44 _E, NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node maintaining the high level voltage, remain low. Accordingly, the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes is maintained, thereby keeping the low level voltage.
- the first clock signal C 1 is inverted from the high level voltage to the low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT 3 a , which is then turned-on.
- transistor NT 3 a is turned-on, the high level voltage at the Q node is discharged through transistor NT 3 a , so that the voltage on the Q node is inverted to the low level voltage.
- the low level voltage at the Q node turns-off transistors NT 44 _O, NT 44 _E, NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes. Accordingly, the odd frame high level supply voltage Vdd_O supplies a high level voltage via the turned-on transistor NT 41 _O to the A_O node, and the high level voltage at the A_O node turns-on the transistor NT 42 _O to supply the high level voltage from the high level supply voltage Vdd_O to the QB_O node.
- the high level voltage supplied to the QB_O node turns-on transistors NT 3 _O and NT 7 _O, whose gate electrodes are connected to the QB_O node.
- An additional discharge path is formed through the turned-on transistor NT 3 a by turning on the transistor NT 3 _O, and the output signal Vg_i is inverted to a low level voltage by turning on transistor NT 7 _O.
- the next stage output signal Vg_j+1 is inverted to the low level voltage, thereby turning-off transistor NT 3 a .
- the high level supply voltage Vdd_O holds the QB_O node continually high by supplying the odd frame high level voltage through transistors NT 41 _O and NT 42 _O during the remaining odd frame period. Accordingly, the voltage at the Q node and the output signal Vg_i remain at a low level during the remaining odd frame period.
- the QB_E node maintains the low level voltage provided by transistor NT 5 b _E, which is turned-on by the odd frame high level supply voltage Vdd_O. The operation during the even frame period will be described as follows.
- the first to the third clock signals C 1 to C 3 maintain a low level voltage, and the start signal Vst or a high level voltage from the previous stage output signal Vg_j ⁇ 1 is supplied to a gate electrode of transistors NT 1 , NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E, thereby turning on the transistors NT 1 , NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E.
- a low level voltage from a low potential supply voltage Vss is supplied to A_O and A_E nodes via the transistors NT 43 _O and NT 43 _E.
- the A_O and the A_E nodes are discharged, so that the low level voltage is maintained at the A_O and the A_E nodes.
- the low level voltage at the A_O and the A_E nodes turns-off transistor NT 42 _O and NT 42 _E.
- a high level supply voltage Vdd_O provides a high level voltage to the QB_O node during the odd frame period.
- the high level supply voltage Vdd_E provides a high level voltage to the QB_E node during the even frame period.
- the low level supply voltage Vss applies a low level voltage to the QB_O and the QB_E nodes via transistors NT 5 _O and NT 5 _E.
- the QB_O and the QB_E nodes are discharged, so that the low level voltage is maintained at the QB_O and the QB_E nodes.
- the QB_O and the QB_E nodes maintain the low level voltage.
- the discharge of the QB_O and the QB_E nodes turns off transistors NT 3 _O, NT 3 _E, NT 7 _O, and NT 7 _E to intercept the discharge path of the Q node.
- the high level supply voltage Vdd applies a high level voltage to a Q node, to thereby charge the Q node with a mid-level voltage Vm.
- the mid-level voltage Vm charged on the Q node turns on transistors NT 44 _O, NT 44 _E, NT 5 a _O, NT 5 a _E, and NT 6 at the Q node.
- the transistors NT 44 _O and NT 44 _E provide a discharge path for the turned-on transistors NT 43 _O and NT 43 _E through the A_O and the A_E nodes, so that the A_O and the A_E nodes remain at the low level voltage.
- transistors NT 5 a _O and NT 5 a _E provide a discharge path for the turned-on transistors NT 5 _O and NT 5 _E through the QB_O and the QB_E nodes, thereby the QB_O and the QB_E nodes remain at the low level voltage.
- transistor NT 6 When transistor NT 6 is turned on, because the first clock signal C 1 is low, a current stage output signal Vg_i is supplied with the output signal of the low level voltage.
- a high level voltage from an even frame high level supply voltage Vdd_E turns-on transistors NT 41 _E and NTSb_O.
- transistor NT 41 _E When transistor NT 41 _E is turned-on, the even frame high level supply voltage Vdd_E applies a high level voltage to a A_E node. Then, the high level voltage is maintained at the A_E node. But, as described above, the discharge path is provided by transistors NT 43 _E and NT 44 _E, so that the A_E node maintains the low level voltage.
- the transistor NT 41 _E is turned on by the even frame high level supply voltage Vdd_E during the even frame period, and remains continually on.
- Transistor NT 5 b _O forms the discharge path through the QB_O node.
- the ( 5 b _O)th transistor NT 5 b _O is kept continually on by the even frame high level supply voltage Vdd_E during the even frame period, to thereby continually form the discharge path through the QB_O node during the even frame period.
- the first clock signal C 1 is inverted from the low level voltage to the high level voltage
- the start signal Vst is inverted from the high level voltage to the low level voltage.
- transistor NT 1 is turned-off, the discharge path of the Q node is intercepted.
- the voltage of the Q node increases higher than a threshold voltage of transistor NT 6 .
- a bootstrapping effect raises the voltage of the Q node to a higher voltage than that of the time period A.
- transistor NT 6 is turned-on and an output signal Vg_i is increased by the voltage of the first clock signal C 1 applied to transistor NT 6 , which is inverted to the high level voltage. Further, the start signal Vst is inverted to the low level voltage to turn-off transistors NT 43 _O, NT 43 _E, NT 5 _O and NT 5 _E, but transistors NT 44 _O, NT 44 _E, NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node maintaining the high level voltage, remain on. Accordingly, the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes is maintained, thereby holding the low level voltage.
- the first clock signal C 1 is inverted from the high level voltage to the low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT 3 a to turn-on transistor NT 3 a .
- transistor NT 3 a is turned-on, the high level voltage on the Q node is discharged through transistor NT 3 a , so that the voltage on the Q node is inverted to the low level voltage.
- the low level voltage of the Q node turns-off transistors NT 44 _O, NT 44 _E, NT 5 a _O and NT 5 a _E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes. Accordingly, the even frame high level supply voltage Vdd_E provides a high level voltage via the turned-on transistor NT 41 _E to the A_E node. The high level voltage at the A_E node turns-on transistor NT 42 _E to supply the high level voltage from the even frame high level supply voltage Vdd_E to the QB_E node.
- the high level voltage supplied to the QB_E node turns-on transistors NT 3 _E and NT 7 _E, whose gate electrodes are connected to the QB_E node.
- An additional discharge path is formed in the turned-on transistor NT 3 a by turning on transistor NT 3 _E, and the output signal Vg_i is inverted to the low level voltage by turning on the transistor NT 7 _E.
- the next stage output signal Vg_i+1 is inverted to the low level voltage; to thereby turn-off transistor NT 3 a .
- the QB_E node continually maintains the high level voltage from the even frame high level supply voltage Vdd_E supplied through transistors NT 41 _E and NT 42 _E during the remaining even frame period. Accordingly, the voltage of the Q node and the output signal Vg_i remain low during the remaining even frame period.
- the QB_O node maintains the low level voltage provided by transistor NT 5 b _O, which is turned-on by the even frame high level supply voltage Vdd_E. In embodiments of the present invention as depicted in FIG.
- a time for applying the gate voltage of transistors NT 4 _O and NT 4 _E is long.
- a time for applying the gate voltage of transistors NT 42 _O and NT 42 _E becomes short due to transistors NT 41 _O, NT 43 _O, NT 44 _O, NT 41 _E, NT 43 _E, and NT 44 _E. Accordingly, a gate stress of transistors NT 42 _O and NT 42 _E can be reduced in FIG. 18 in comparison to FIG. 16 . Thus, deterioration of the transistor can be precented.
- FIG. 19 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention.
- the odd driving circuit 140 o includes 1 st, 3 rd, 5 th, . . . , (n ⁇ 1)-th odd stages.
- the even driving circuit 140 e includes 2 nd, 4 th, 6 th, . . . , n-th even stages.
- the first stage 1 st receives as a start pulse the start signal Vst 1 .
- the second stage 2 nd receives as a start pulse the start signal Vst 2 .
- the start signal Vst 2 is delayed by one clock period with respect to the start signal Vst 1 .
- Each of the remaining i-numbered odd stages 3 rd, 5 th, . . . , (n ⁇ 1)-th receives as a start pulse an output signal Vg_i- 2 from the previous (i ⁇ 2)-numbered odd stage.
- each of the remaining i-numbered even stages 2 nd, 4 th, 6 th, . . . , n-th receives as a start pulse an output signal Vg_i ⁇ 2 from the previous (i ⁇ 2)-numbered even stage.
- the fourth stage 4 th receives start signal Vg_ 2 from the second stage.
- the third stage 3 rd receives the start signal Vg_ 1 from the first stage 1 st.
- each of the even and odd stages responds to one of first to fourth clock signals C 1 , C 2 , C 3 and C 4 .
- the one clock signal is supplied by delaying two clock periods to apply the output signal Vg_i synchronized to the clock signal to the gate line Gi via an output buffer and a level-shifter (not shown).
- each of the odd and even stages 1 st, 2 nd, 3 rd, 4 th, . . . , and (n-1) receives as a reset pulse an output signal Vg_i+1 delayed by one clock period from a next stage (i+1)-th.
- the last stage n-th is provided with a reset pulse obtained from a dummy stage (not shown) by delaying one clock signal.
- the above driving method can be implementing using the exemplary driving stages depicted in FIGS. 16 and 18 .
- the gate driving circuit of FIG. 19 includes a second start signal Vst 2 , supplied by delaying a first start signal Vst 1 by one clock period.
- the driving method of FIG. 15 includes one start signal Vst.
- the start signal Vst is inputted and the clock signal is supplied by delaying by one clock period.
- the start signal Vst is inputted and the clock signal is supplied after delaying by two clock periods, therefore, the period when the Q node maintains the floated mid-level voltage increases by one clock period as shown in FIG. 20 .
- the gate lines are divided into odd and even lines to make a bi-directional driving, thereby enlarging a pitch of one stage to correspond to two liquid crystal cells.
- a channel width of the output buffer can be increased. Accordingly, a distortion of the scanning pulse waveform at each stage of the driving circuit, which closely depends upon the channel width of the output buffer, can be reduced.
- the liquid crystal display panel will last longer because the life of the panel is directly dependent upon the channel width.
- a plurality of pull-down transistors is arranged in a space within the output buffer partitioned into odd/even driving stages, and the period for applying the gate voltage of the pull-down transistors is reduced. Accordingly, it is possible to reduce deterioration of the output buffer caused by the stress of the gate voltage. As a result, it is possible to extend the life span of the output buffer.
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Abstract
Description
- This application claims the benefit of Korean Patent Application Nos. 10-2004-38888 filed in Korea on May 31, 2004, and 10-2004-73106 filed in Korea on Sep. 13, 2004, both of which are hereby incorporated by reference in their entirety.
- 1. Field of the Invention
- This invention relates to a liquid crystal display, and more particularly to a liquid crystal display panel having a built-in driving circuit.
- 2. Description of the Related Art
- Generally, a liquid crystal display (LCD) device can be used as a display monitor for a television and a computer. In an LCD device, light transmittance of a liquid crystal is controlled using an electric field to thereby display a picture. To this end, the LCD includes a liquid crystal display panel having liquid crystal cells arranged in a matrix type. A driving circuit is provided for driving the liquid crystal display panel.
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FIG. 1 is a block circuit diagram showing a configuration of a related art liquid crystal display device. Referring toFIG. 1 , a related art LCD device includes a liquidcrystal display panel 13 having (m×n) liquid crystal cells Clc arranged in a matrix, m data lines D1 to Dm and n gate lines G1 to Gn crossing each other and thin film transistors TFT provided at crossing of the data lines and the gate lines, adata driving circuit 11 for applying a data to the data lines D1 to Dm of the liquidcrystal display panel 13, and agate driving circuit 12 for applying a scanning pulse to the gate lines G1 to Gn. - The liquid
crystal display panel 13 is formed by joining a thin film transistor substrate to a color filter substrate. The thin film transistor substrate is provided with a thin film transistor array. The color filter substrate is provided with a color filter array. a liquid crystal layer is provided between the thin film transistor substrate and the color filter substrate. The color filter substrate is provided with a black matrix, a color filter and a common electrode. Polarizers having polarization axes perpendicular to each other are respectively attached onto the thin film transistor substrate and the color filter substrate of the liquidcrystal display panel 13, and an alignment film for determining a free-tilt angle of the liquid crystal is further provided on the inner side surface coming in touch with the liquid crystal layer. - The data lines D1 to Dm and the gate lines G1 to Gn provided at the thin film transistor substrate of the liquid
crystal display panel 13 cross each other perpendicularly. The thin film transistor TFT provided at each crossing of the data lines D1 to Dm and the gate lines G1 to Gn applies a data voltage supplied via the data lines D1 to Dn to a pixel electrode of the liquid crystal cell Clc in response to a scanning pulse from the gate line G1 to Gn. The liquid crystal cell Clc rotates a liquid crystal having a dielectric anisotropy in response to a potential difference between a data voltage supplied to the pixel electrode and a common voltage supplied to the common electrode to thereby control light transmittance. Further, each liquid crystal cell Clc is provided with a storage capacitor Cst. The storage capacitor Cst is provided between the pixel electrode and a pre-stage gate line or between the pixel electrode and a common line (not shown), thereby holding constant a data voltage charged in the liquid crystal cell Clc. Thedata driving circuit 11 converts an input digital video data into an analog data voltage using a gamma voltage. Thedata driving circuit 11 applies the converted analog data voltage to the data lines D1 to Dm. Thegate driving circuit 12 sequentially applies a scanning pulse to the gate lines GL1 to GLn to thereby select a horizontal line of the liquid crystal cell Clc to be supplied with a data. -
FIG. 2 is a block diagram showing a configuration of a gate driving circuit shown inFIG. 2 according to the related art. As shown inFIG. 2 , thegate driving circuit 12 includes a shift register having an n-number of stages, 1st to nth, connected in a cascade to an input line of a start pulse Vst to sequentially supply a scanning pulse to gate lines G1 to Gn. The 1st to nth stages shown inFIG. 2 are commonly supplied with a clock signal CLK, along with high-level and low-level driving voltages VDD and VSS, and with a start pulse Vst or an output signal of the previous stage. The 1st stage outputs a scanning pulse to the first gate line GL1 in response to the start pulse Vst and the clock signal CLK. Further, the 2nd to nth stages sequentially outputs a scanning pulse to the second to nth gate lines G2 to Gn, respectively, in response to an output signal from the corresponding previous stage and the clock signal CLK. In other words, the 1st to nth stages have the sane circuit configuration. At least two clock signals having different phases are used for providing the clock signal CLK. -
FIG. 3 is a detailed circuit diagram of the 1st stage of the related art gate driving circuit shown inFIG. 2 . Referring toFIG. 3 , the 1st stage includes an output buffer and a controller. The output buffer includes a pull-up NMOS transistor NT6 and a pull-down NMOS transistor NT7. The pull-up NMOS transistor NT6 output a first clock signal CLK1 to an output line under control of a Q node. The pull-down NMOS transistor NT7 output a low-level driving voltage VSS to the output line under control of a QB node. The controller includes NMOS transistors NT1 to NT5 for controlling the Q node and the QB node. The 1st stage is supplied with high-level and low-level voltages VDD and VSS, and a start pulse Vst. Four clock signals CLK1 to CLK4 with different phases are available, three of which, CLK1, CLK3 and CLK4 are supplied to the 1st stage. -
FIG. 4 is a driving waveform diagram for the 1st stage shown inFIG. 3 . Referring toFIG. 4 , during a first time period A, the NMOS transistors NT1 and NT2 are turned on by high-level voltages from the start pulse Vst and the fourth clock signal CLK4 to thereby pre-charge the high-level voltage of the start pulse Vst into the Q node. The pull-up NMOS transistor NT6 is turned on by a high-level voltage pre-charged into the Q node to thereby supply a low-level voltage from the first clock signal CLK1 to an output line, that is, the first gate line G1. At this time, the QB node is driven low by the NMOS transistor NT5, which is turned on by the start pulse Vst. Thus, the NMOS transistor NT3B and the pull-down NMOS transistor NT7 are turned off. The NMOS transistors NT3A and NT4 also are turned off by a low-level voltage from the third clock signal CLK3. - During a second time period B, the NMOS transistors NT1 and NT2 are turned off by low-level voltages from the start pulse Vst and the fourth clock signal CLK4, so that the Q node floats to a high state, while the pull-up NMOS transistor NT6 remains on. Then, a high-level voltage from the first clock signal CLK1 bootstraps the Q node due to a parasitic capacitance caused by an overlap between the gate electrode and the drain electrode of the pull-up NMOS transistor NT6. Thus, the Q node voltage jumps higher to turn on the pull-up NMOS transistor NT6, thereby rapidly supplying a high-level voltage from the first clock signal CLK1 to the first gate line G1.
- During a third time period C, the NMOS transistors NT1 and NT2 are turned off by the low-level voltages from the start pulse Vst and the fourth clock signal CLK4, so that the Q node floats to a high state, while the pull-up NMOS transistor NT6 remains on. Thus, the pull-up NMOS transistor NT6 remains on to thereby supply a low-level voltage from the first clock signal CLK1 to the first gate line G1.
- During a fourth time period D, the NMOS transistors NT3A and NT4 are turned on by a high-level voltage from the third clock signal CLK3, so that the Q node is discharged into a low-level voltage while the QB node is charged into a high-level voltage. The high-level voltage at the QB node turns on the NMOS transistor NT3B to accelerate the discharge of the Q node, and the pull-down NMOS transistor N7 is turned on to supply a low-level voltage to the first gate line G1.
- During a fifth time period E, the NMOS transistors NT4 and NT5 are turned off by a low-level voltage from the third clock signal CLK3. The QB node floats to a high state. The pull-down NMOS transistor N7 remains on to supply a low-level voltage to the first gate line G1. Further, the pull-down NMOS transistor NT7 remains on continuously until the high-level voltage of the start pulse Vst is supplied.
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FIG. 5 is a schematic plan view of a liquid crystal display panel with a built-in gate driving circuit according to the related art. Referring toFIG. 5 , the related art gate driving circuit having the above-mentioned configuration is built in a liquidcrystal display panel 10 by using an amorphous silicon thin film transistor. A size of an output buffer of each stage, for example, the pull-up and pull-down NMOS transistors NT6 and NT7, is set to have a very large value due to a low mobility. This is due to the fact that the scanning pulse is directly applied via the output buffer, as described above, and that a channel width of the output buffer has a large impact on the life of the liquidcrystal display panel 10. According to a design constraint, the output buffer must have a channel width of more than thousands of millimeters (mm). The channel width can be more than ten thousands of microns (μm) in order to drive a medium-to-large liquid crystal display panel of more than ten (10) inches. For this reason, an area occupied by the built-ingate driving circuit 30 must be enlarged. However, product standardization limits how much the circuit area can be enlarged within the non-display area. Accordingly, a bi-directional driving method has been proposed, which provides first and secondgate driving circuits display area 20 as shown inFIG. 5 to concurrently drive the gate lines of thedisplay area 20 at each side thereof. -
FIG. 6 is a plan view of the related art liquid crystal display panel with a built-in gate driving circuit ofFIG. 5 . Referring toFIG. 6 , the i-th gate line Gi concurrently receives scanning pulses from theith stage 32 i from the firstgate driving circuit 30 and the i-th stage 42 i from the secondgate driving circuit 40, thereby applying a data signal on the data line D, via the thin film transistor TFT connected to the gate line Gi, to thepixel electrode 44. Next, the (i+1)-th gate line Gi+1 is driven by scanning pulses concurrently received from the (i+1)-th stage 32 i+1 from the firstgate driving circuit 30 and the (i+1)-th stage 42 i+1 from the secondgate driving circuit 40. As shown inFIG. 6 , each of thestages gate driving circuit 30, or each of thestages gate driving circuit 40, includes anoutput buffer 54 having pull-up and pull-down transistors NT6 and NT7, and acontroller 52 having transistors NT1 to NT5 for controlling theoutput buffer 54. Further, a line on glass (LOG)area 50 is provided with a plurality of LOG-type signal lines for supplying a plurality of clock signals and power signals. TheLOG area 50 is located at the outer portion of thestages gate driving circuit 30 and the outer portion of thestages second driving circuit 40. Also, a sealant (not shown) is coated onto the outer portion of theLOG area 50 for joining the thin film transistor substrate with the color filter substrate. Since the sealant contains a glass fiber that can cause corrosion when in contact with food, the first and secondgate driving circuits LOG area 50 are located at the inner side thereof so that they do not overlap with the sealant. - Therefore, a line width of the circuit area at which the first and second
gate driving circuits output buffer 54 is not enlarged. Accordingly, a scheme capable of enlarging the area of the built-on driving circuit is needed. - Accordingly, the present invention is directed to a liquid crystal display panel having a built-in driving circuit that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- An object of the present invention to provide a driving circuit that reduces a distortion of a scanning pulse waveform in a liquid crystal display panel.
- Another object of the present invention is to provide a driving circuit that prolongs the life of a liquid crystal display panel.
- Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a liquid crystal display panel includes liquid crystal cells forming a matrix in a display area of the liquid crystal display panel; odd and even gate driving circuits provided at an outer area of the display area, the display area being positioned between the odd and even gate driving circuits, the odd driving circuit including a plurality of odd stages, the even driving circuit including a plurality of even stages; a plurality of gate lines, including even gate lines and odd gate lines in the liquid crystal cell matrix, the odd gate lines being driven by the odd driving circuit, and the even gate lines being driven by the even driving circuit, wherein a pitch of each of the odd stages and the even stages corresponds to size larger than a pitch of the liquid crystal cell.
- In another aspect, a liquid crystal display panel includes liquid crystal cells forming a matrix in a display area of the liquid crystal display panel; odd and even gate driving circuits provided at an outer area of the display area, the display area being positioned between the odd and even gate driving circuits, the odd driving circuit including a plurality of odd stages, the even driving circuit including a plurality of even stages; a plurality of gate lines, including even gate lines and odd gate lines in the liquid crystal cell matrix, the odd gate lines being driven by the odd driving circuit, and the even gate lines being driven by the even driving circuit, wherein a start pulse of each of the odd stages includes an output signal from a previous one of the even stages, and a start pulse of each of the even stages includes an output signal of a previous one of the odd stages.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
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FIG. 1 is a block circuit diagram showing a configuration of a related art liquid crystal display device. -
FIG. 2 is a block diagram showing a configuration of a gate driving circuit shown inFIG. 2 according to the related art. -
FIG. 3 is a detailed circuit diagram of the 1st stage of the related art gate driving circuit shown inFIG. 2 . -
FIG. 4 is a driving waveform diagram for the 1st stage shown inFIG. 3 . -
FIG. 5 is a schematic plan view of a liquid crystal display panel with a built-in gate driving circuit according to the related art. -
FIG. 6 is a plan view of the related art liquid crystal display panel with a built-in gate driving circuit ofFIG. 5 . -
FIG. 7 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a first embodiment of the present invention. -
FIG. 8 is a schematic view for a method of driving odd and even gate driving circuits according to the first embodiment of the present invention. -
FIG. 9 is a schematic view for a method of driving odd and even gate driving circuits according to a second embodiment of the present invention. -
FIG. 10 is an exemplary circuit diagram of a first driving stage of the built-in gate driving circuit. -
FIG. 11 is an exemplary waveform diagram for driving the bi-phase gate driving circuit ofFIG. 10 . -
FIG. 12 is an exemplary circuit diagram of the first and third driving stages of the built-in gate driving circuit. -
FIG. 13 is an exemplary waveform diagram for driving the four-phase gate driving circuit ofFIG. 12 . -
FIG. 14 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a fourth embodiment of the present invention. -
FIG. 15 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention. -
FIG. 16 is an exemplary circuit diagram of a driving stage of the built-in gate driving circuit ofFIG. 15 . -
FIG. 17 shows exemplary waveforms applied to the built-in gate driving circuit ofFIG. 15 . -
FIG. 18 is another exemplary circuit diagram of a driving stage of the built-in gate driving circuit ofFIG. 15 . -
FIG. 19 is a schematic view for another exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention. -
FIG. 20 shows exemplary waveforms applied to the built-in gate driving circuit ofFIG. 19 . - Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
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FIG. 7 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a first embodiment of the present invention. Referring toFIG. 7 , a thin film transistor substrate includes adisplay area 74, and odd and evengate driving circuits 70 o and 70 e built in a non-display area at each side of thedisplay area 74. Thedisplay area 74 is provided with gate lines G and data lines D crossing each other. Crossings of the gate lines G and the data lines G define pixel regions in thedisplay area 74. A thin film transistor TFT is connected at a crossing of one of the gate lines G and one of the data lines D. Liquid crystal cells (not shown) are provided in each pixel region. Apixel electrode 76 of the liquid crystal cell in each pixel region is connected to the corresponding thin film transistor TFT in that pixel region. The pixel regions, and the liquid crystal cells within the pixel regions, are arranged in a matrix. The odd and evengate driving circuits 70 o and 70 e provided in the non-display area drive the gate lines. Specifically, the odd and evengate driving circuits 70 o and 70 e drive corresponding odd gate lines Go and even gate lines Ge. The odd gate driving circuit 70 o includes an odd stage 72 o for driving the odd gate line Go, while the evengate driving circuit 70 e includes aneven stage 72 e for driving the even gate line Ge. - As shown in
FIG. 7 , each of the odd stage 72 o and theeven stage 72 e includes anoutput buffer 64 including pull-up and pull-down transistors NT6 and NT7, and acontroller 62 including first to fifth transistors NT1 and NT5 for controlling theoutput buffer 64. A line on glass (LOG)area 60 is located at an outer portion of each of the odd stage 72 o and theeven stage 72 e. TheLOG area 60 is provided with a plurality of LOG-type signal lines (not shown) for supplying a plurality of clock signals and power signals (not shown inFIG. 7 ). Because the gate lines are divided into odd gate lines Go and even gate lines Ge driven by the odd stage 72 o and theeven stage 72 e, respectively, a pitch of each of thestages 72 o and 72 e can be increased to correspond to two liquid crystal cells. Accordingly, the size of theoutput buffer 64 can be increased by more than 50% of that of thecontroller 62, which occupies a relatively small area in proportion to such an enlarged area of eachstage 72 o and 72 e. For instance, thecontroller 62 in each of thestages 72 o and 72 e occupies an area corresponding to a pitch of one liquid crystal cell, while theoutput buffer 64 may cover an area corresponding to a pitch of two liquid crystal cells. Thus, the relative position of thecontroller 62 and theoutput buffer 64 in the odd stage 72 o is horizontally rotated by 180 degrees in theeven stage 72 e. Accordingly, a channel width of theoutput buffer 64 can be increased to more than ten thousands microns (10,000 μm) required for the medium-to-large panel of more than 10 inches. -
FIG. 8 is a schematic view for a method of driving odd and even gate driving circuits according to the first embodiment of the present invention. Referring toFIG. 8 , the odd driving circuit 70 o includes 1st, 3rd, 5th, . . . , (n−1)-th odd stages. The even drivingcircuit 70 e includes 2nd, 4th, 6th, . . . , n-th even stages. Each of the 1st, 3rd, 5th . . . , and (n−1)-th odd stages receives an input scanning pulse as a start pulse from the preceding odd stage and shifts it sequentially, thereby driving the odd gate lines G1, G3, G5, . . . , and Gn−1. On the other hand, each of the 2nd, 4th, 6th, . . . , and n-th even stages receives an input scanning pulse as a start pulse from the preceding even stage and shifts it sequentially, thereby driving the even gate lines G2, G4, G6, . . . , and Gn. Then, if an even start pulse V2st and an even clock signal externally supplied to the evengate driving circuit 70 e are delayed by one clock period in comparison with an odd start pulse V1st and an odd clock signal externally supplied to the odd gate driving circuit 70 o, respectively, then the gate lines G1, G2, G3, G4, . . . , Gn−1, and Gn can be sequentially driven. Herein, the odd gate lines G1, G3, G5, . . . , and Gn−1 have an opened structure with respect to the evengate driving circuit 70 e, whereas the even gate lines G2, G4, G6, . . . , and Gn have an opened structure with respect to the oddgate driving circuit 700. -
FIG. 9 is a schematic view for a method of driving odd and even gate driving circuits according to a second embodiment of the present invention. Referring toFIG. 9 , theodd driving circuit 700 includes 1st, 3rd, 5th, (n−1)-th odd stages. The even drivingcircuit 70 e includes 2nd, 4th, 6th, . . . , n-th even stages. Each of the 2nd, 4th, 6th, . . . , and n-th even stages from the even drivingcircuit 70 e receives an input scanning pulse as a start pulse from the preceding 1st, 3rd, 5th, . . . , or (n−1)-th odd stage, respectively, and shifts it sequentially, thereby driving the even gate lines G2, G4, G4, . . . , and Gn. On the other hand, each of the 1st, 3rd, 5th, . . . , and (n−1)-th odd stages from the odd driving circuit 70 o receives an input scanning pulse as a start pulse from the preceding 2nd, 4th, 6th, . . . , or n-th even stage, respectively, and shifts it sequentially, thereby driving the odd gate lines G1, G3, G5, . . . , and Gn−1. - The first odd stage 1st applies a scanning pulse to the first odd gate line G1 and applies the same scanning pulse to the first even stage 2nd connected to the first odd gate line G1 as a start pulse. Next, the first even stage 2nd applies a scanning pulse to the first even gate line G2 and applies the same scanning pulse to the second odd stage 3rd as a start pulse. Thereafter, the second odd stage 3rd applies a scanning pulse to the second odd gate line G3 and applies the same scanning pulse as a start pulse to the second even stage 4th. In this manner, the odd stages 1st, 3rd, 5th, . . . , and (n−1)-th and the even stages 2nd, 4th, 6th, . . . , and n-th alternately use a scanning pulse of the preceding stage as a start pulse to thereby sequentially apply a signal to each gate line. In this case, the
first stage 1 st of the odd gate driving circuit 70 o is the only stage that receives an externally supplied start pulse Vst, whereas the odd and evengate driving circuits 70 o and 70 e are similarly supplied with at least two clock signals. -
FIG. 10 is an exemplary circuit diagram of a first driving stage of the built-in gate driving circuit. Referring toFIG. 10 , the first stage 1st includes an output buffer having, for example, a pull-up NMOS transistor NT6 for outputting a first clock signal C1 to an output line under control of a Q node and a pull-down NMOS transistor NT7 for outputting a low-level driving voltage VSS to the output line under control of a QB node. The first stage 1st also includes a controller having, for example, a plurality of NMOS transistors N1, N3 a-N3 c, N4, and N5 for controlling the Q node and the QB node. Such a 1st stage is supplied with high-level and low-level voltages Vdd and Vdd and a start pulse Vst. The first stage 1st is also provided with first and second clock signals C1 and C2 having different phases as shown inFIG. 11 . The circuit diagram ofFIG. 10 implements a bi-phase gate driving shift register circuit. -
FIG. 11 is an exemplary waveform diagram for driving the bi-phase gate driving circuit ofFIG. 10 . Referring toFIG. 11 , during a first time period A, the transistor N1 is turned on by high-level voltages provided by the start pulse Vst and the second clock signal C2. The transistor N1 pre-charges the high-level voltage provided by the start pulse Vst into the Q node. The pull-up NMOS transistor N6 is turned on by the high-level voltage pre-charged into the Q node. Thus, the pull-up NMOS transistor N6 supplies a low-level voltage from the first clock signal C1 to an output line, for example, the first gate line G1. The NMOS transistors N3 b and N3 c are turned on by the start pulse Vst, thereby forcing the QB node into a low state. Then, the pull-down NMOS transistors N5 and N7 are turned off. - During a second time period B, the first NMOS transistor N1 is turned off by low-level voltages from the start pulse Vst and the second clock signal C2. The Q node floats into a high state while the pull-up NMOS transistor N6 remains on. Then, a high-level voltage from the first clock signal C1 bootstraps the Q node due to a parasitic capacitance caused by an overlap between a gate electrode and a drain electrode of the pull-up NMOS transistor N6. Thus, as shown in
FIG. 11 , the voltage at the bootstrapped Q node jumps higher. The higher voltage at the bootstrapped Q node turns on the pull-up NMOS transistor N6, which supplies the high-level voltage from the first clock signal C1 to the first gate line G1. - During a third time period C, the NMOS transistor N3 a is turned on by a gate output A from a next stage, and the NMOS transistor N4 is turned on by a high-level voltage of the second clock signal C2. The Q node is discharged to a low-level voltage while the QB node is charged to a high-level voltage. The NMOS transistor N5 is turned on by the high-level voltage at the QB node, thereby accelerating the discharge of the Q node. The pull-down NMOS transistor N7 is also turned on, thereby applying a low-level voltage to the first gate line G1.
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FIG. 12 is an exemplary circuit diagram of the first and third driving stages of the built-in gate driving circuit. Referring toFIG. 12 , the first and third stages, 1st and 3rd, are driven by a driving waveform generated from a four-phase gate driving shift register circuit.FIG. 13 is an exemplary waveform diagram for driving the four-phase gate driving circuit ofFIG. 12 . During a first time period A, transistor N11 in the first stage 1st is turned on by a high-level voltage from a start pulse V1st provided to the first stage 1st. The turned-on transistor N11 transistor pre-charges the high-level voltage from the start pulse V1st into a Q1 node of the first stage 1st. A pull-up NMOS transistor N16 is turned on by the high-level voltage pre-charged into the Q1 node. The turned-on NMOS transistor N16 supplies a low-level voltage from the first clock signal C1 to an output line, for example, the first gate line G1. - During a second time period B, the NMOS transistor N11 from the first stage 1st is turned off by a low-level voltage from the start pulse V1st. The Q1 node floats to a high state, while the pull-up NMOS transistor N16 remains on. Then, the high-level voltage from the first clock signal C1 bootstraps the Q1 node due to a parasitic capacitance caused by an overlap between the gate electrode and the drain electrode of the pull-up NMOS transistor N16. Thus, the Q1 node jumps to a higher voltage, thereby turning on the pull-up NMOS transistor N16. The turned-on NMOS transistor N16 rapidly supplies the high-level voltage from the first clock signal C1 to the first gate line G1. The high-level voltage from the first clock signal C1 is applied via a line connected to the third stage 3rd as a start pulse V3st of the third stage 3rd. Thus, the third stage 3rd supplies the start pulse V3st one horizontal period prior to an application of the third and fourth clock signals C3 and C4 to thereby pre-charge a Q3 node of the third stage 3rd during the second time period B.
- During a third time period C, the NMOS transistor N11 is turned off by low-level voltages from the start pulse V1st and the first clock signal C1. The Q1 node floats to a high state while the pull-up NMOS transistor N16 remains on. Thus, the low-level voltage from the first clock signal C1 is applied to the first gate line G1. Further, the transistor N14 is turned on by the applied second clock signal C2. Thus, a high-level voltage Vdd is applied to the QB1 node, which becomes high. The transistor N15 and the pull-down NMOS transistor N17 are turned on by the high-level voltage at the QB1 node. Then, the transistor N15 discharges a voltage charged in the Q1 node, and the pull-down transistor N17 provides a low-level voltage to the first gate line G1 and remove a noise generated on the first gate line G1. Concurrently, the transistor N13 a is turned on by an output A generated from the second stage (not shown) via the second gate line G2 (not shown) or fed back from the third stage 3rd. The turned-on transistor N13 a rapidly discharges a voltage charged at the Q1 node along with the transistor N15. The transistor N31 is turned off by the low-level voltage from the start pulse V3st, forcing the Q3 node of the third stage 3rd to float to a high state.
- During a fourth time period D, a high-level voltage of the third clock signal C3 is applied to the third stage 3rd. The high-level voltage of the third clock signal C3 is applied, via the transistor N36, to the third gate line G3 from the third stage 3rd. The output of the third stage 3rd on the third gate line G3 is applied as a start pulse V5st to the fifth stage 5th stage (not shown).
- During a fifth time period E, a high-level voltage of the fourth clock signal C4 is applied to the third stage 3rd. The NMOS transistor N34 is turned on by the high-level voltage of the fourth clock signal C4. Thus, the QB3 node floats to a high state, and the pull-down NMOS transistor N37 remains on. The pull-down NMOS transistor N37 applies a low-level voltage to the third gate line G3 and cancels a noise generated on the third gate line G3. Further, the transistor N35 is turned on to discharge a voltage charged in the Q3 node. Concurrently, the transistor N33 a is turned on by an output B generated from the fourth stage 4th (not shown) via the second gate line G2 (not shown) or supplied from the fifth stage 5th. Then, transistor N32 rapidly discharges a voltage charged at the Q3 node along with the transistor N35. Further, the pull-down NMOS transistors N17 and N37 remain continuously on until the high-level voltages of the start pulse V1st and V3st, respectively, are supplied, thereby preventing noise from being generated on the first gate line G1 and the third gate line G3.
- In embodiments of the present invention, the liquid crystal display panel includes a four-phase driving circuit. As shown in
FIG. 12 , a Q node of such a driving circuit is charged during three horizontal periods in accordance with the third and fourth clock signals C3 and C4 applied to the 3rd stage. Thus, the output lines are charged sufficiently long to avoid gate driving error problems caused by a short charging time in high resolution applications. The Q nodes in subsequent stages of the driving circuit are also charged during three horizontal periods similarly to the 1st stage. -
FIG. 14 is a schematic plan view of an exemplary portion of a thin film transistor substrate of a liquid crystal display panel with a built-in gate driving circuit according to a fourth embodiment of the present invention. Referring toFIG. 14 , a thin film transistor substrate includes adisplay area 144, and odd and evengate driving circuits 140 o and 140 e built in a non-display area at each side of thedisplay area 144. Thedisplay area 144 is provided with an n-number of gate lines G and an m-number of data lines D crossing each other. As an example, the number n of gate lines is equal to m/2, that is half of the m-number of data lines D. Crossings of the gate lines G and the data lines G define pixel regions in thedisplay area 144. A thin film transistor TFT is connected at a crossing of one of the gate lines G and one of the data lines D. Liquid crystal cells (not shown) are provided in each pixel region. Apixel electrode 146 of the liquid crystal cell in each pixel region is connected to the corresponding thin film transistor TFT in that pixel region. The pixel regions, and the liquid crystal cells within the pixel regions, are arranged in a matrix. - The odd and even
gate driving circuits 140 o and 140 e provided in the non-display area drive the gate lines. Specifically, the odd and evengate driving circuits 140 o and 140 e drive corresponding odd gate lines Go and even gate lines Ge. The odd gate driving circuit 140 o includes an odd stage 142 o for driving the odd gate line Go, while the evengate driving circuit 140 e includes aneven stage 142 e for driving the even gate line Ge. As shown inFIGS. 14, 16 and 18, each of the odd stage 142 o and theeven stage 142 e includesoutput buffers 145 o and 145 e having pull-up transistor NT6 and pull-down transistors NT7_O and NT7_E, and acontrollers 143 o and 143 e having a plurality of NMOS transistors for controlling the output buffers 145 o and 145 e. ALOG area 141 is located at the outer portion of each of the odd stage 142 o and theeven stage 142 e. TheLOG area 141 is provided with a plurality of LOG-type signal lines for supplying a plurality of clock signals and power signals. Because the gate lines are divided into odd gate lines Go and even gate lines Ge driven by the odd stage 142 o and theeven stage 142 e, respectively, a pitch of each of thestages 142 o and 142 e can be increased to correspond to two liquid crystal cells. Accordingly, the size of the output buffers 145 o and 145 e can be increased by more than 50% of that of thecontrollers 143 o and 143 e, each which occupies a relatively small area in proportion to such an enlarged area of eachstage 142 o and 142 e. For instance, thecontrollers 143 o and 143 e in each of thestages 142 o and 142 e occupies an area corresponding to a pitch of one liquid crystal cell, while each of the output buffers 145 o and 145 e may cover an area corresponding to a pitch of two liquid crystal cells. Thus, the relative position of the controller 143 o and the output buffer 145 o in the odd stage 142 o is horizontally rotated by 180 degrees with respect to thecontroller 143 e and theoutput buffer 145 e in theeven stage 142 e. - As shown in
FIGS. 16 and 18 , an area is allocated in each of thestages 142 o and 142 e to form the output buffers 145 o and 145 e. Thus, a gate driving circuit, having two pull-down transistors NT7_O and NT_7E is provided at each stage. The gate driving circuit alternately operates the two pull-down transistors NT7_O and NT7_E in each time period to thereby prevent deterioration caused by a gate-bias stress of the pull-down transistors NT7_O and NT7_E. So the gate driving circuit may operate error-free and has a longer life. -
FIG. 15 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention. Referring toFIG. 15 , the odd driving circuit 140 o includes 1st, 3rd, 5th, . . . , (n-1)-th odd stages. The even drivingcircuit 140 e includes 2nd, 4th, 6th, . . . , n-th even stages. The first stage 1st receives as a start pulse the start signal Vst. Each of the remaining odd stages 3rd, 5th, . . . , (n−1)-th and the even stages 2nd, 4th, 6th, . . . , n-th receives as a start pulse an output signal Vg_i−1 from the previous stage i−1th stage. For example, the second stage 2nd receives start signal Vg_1 from the first stage. The third stage 3rd receives the start signal Vg_2 from the second stage 2nd. Furthermore, each of the even and odd stages responds to one of first to fourth clock signals C1, C2, C3 and C4. The one clock signal is supplied by delaying one clock period to apply the output signal Vg_j synchronized to the clock signal to the gate line Gi via an output buffer and a level-shifter (not shown). Furthermore, each of the odd and even stages 1st, 2nd, 3rd, 4th, . . . , and (n−1) receives an output signal Vg_i+1 from a next stage (i+1)-th as a reset pulse. The last stage n-th is provided with a reset pulse obtained from a dummy stage (not shown) by delaying one clock signal. Hereinafter, an operation of each stage will be described in detail with reference to a (4 j+1)-th stage (herein, j is 0, 1, 2, 3, . . . , m/4). -
FIG. 16 is an exemplary circuit diagram of a driving stage of the built-in gate driving circuit ofFIG. 15 .FIG. 17 shows exemplary waveforms applied to the built-in gate driving circuit ofFIG. 15 . Referring toFIGS. 16 and 17 , during a time period A within an odd frame period, first to third clock signals C1 to C3 are low, and a start signal Vst or a high level from a previous stage output signal Vg_i−1 is supplied to a gate electrode of the first, the transistors NT1, NT5_O and NT5_E, thereby turning-on the transistors NT1, NT5_O and NT5_E. Then, a low level voltage from a low level supply voltage Vss is supplied to QB_O and QB_E nodes via the transistors NT5_O and NT5_E. In other words, the QB_O and QB_E nodes are discharged during the A time period of the frame period. Moreover, the QB_O and QB_E nodes are held at a low level. The QB_O and QB_E nodes remain low, discharging the QB_O and QB_E nodes, thereby turning-off the NT3_O, NT3_E, NT7_O, and NT7_E. When the NT1 is turned-on, a high level supply voltage Vdd is applied to a Q node. The Q node is charged with a mid-level voltage Vm. The mid-level voltage Vm charged on the Q node turns-on the transistors NT5 a_O and NT5 a_E connected to the Q node. - During the time period A period, the start signal Vst or the output signal Vg_i−1 from a preceding stage is applied to a gate terminal of transistors NT5_O and NT5_E. Transistors NT5_O and NT5_E are turned-on. The turned-on transistors NT5_O, NT5_E, NT5 a_O, NT5 a_E form a discharge path for the QB_O and the QB_E nodes. Thus, the QB_O and the QB_E nodes are held at a low level. During the time period A of an odd frame, transistor NT6 is turned-on by the mid-level voltage Vm at the Q node. Because the first clock signal C1 is low, a current stage output signal Vg_i holds the voltage low. A high level supply voltage Vdd 0 is applied to and turns-on transistors NT4_O and NT5 b_E during an odd frame period. When transistor NT4_O is turned-on, the high level voltage is supplied to the QB_O node. Then, the voltage on the QB_O node increases to the high level voltage. But, the QB_O node remains low because transistors NT5_O and NT5 a_O have wider channel widths than transistor NT4_O. Thus, the turned-on transistor NT4_O continually remains on during the odd frame period. The transistor NT5 b_E forms a discharge path for the QB_E node. After the time period A, although the transistors NT5_E, NT5 a_E are turned-off, the transistor NT5 b_E continually remains on due to the high level supply voltage Vdd_O applied during the odd frame period, to thereby continually form the discharge path of the QB_E node during the odd frame period.
- During a time period B of the odd frame period, the first clock signal C1 is inverted from the low level voltage to a high level voltage, and the start signal Vst is inverted from the high level voltage to a low level voltage. When transistor NT1 is turned-off, the discharge path of the Q node is intercepted. A voltage charged in a parasitic capacitance between the drain electrode and the gate electrode of transistor NT6 is added to the mid-level voltage Vm at the Q node, the voltage of the Q node further increases more than a threshold voltage of the sixth transistor NT6. In other words, the voltage of the Q node increases to a voltage higher than the voltage of the Q node during the time period A due to bootstrapping. Accordingly, during the time period B, transistor NT6 is turned-on, and an output signal Vg_i increases due to a voltage of the first clock signal C1 while transistor NT6 is on. Thus, transistor NT6 is inverted to the high level voltage. Further, the start signal Vst is inverted to a low level voltage to turn-off transistors NT5_O and NT5_E, but the transistors NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node remain high, thus on. Accordingly, a discharge path is maintained at the QB_O and the QB_E nodes, thereby holding the voltage low.
- During a time period C, the first clock signal C1 is inverted from the high level voltage to a low level voltage. The high level voltage from of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT3 a to turn-on transistor NT3 a. When transistor NT3 a is turned-on, the high level voltage on the Q node is discharged through transistor NT3 a, so that the voltage on the Q node is inverted to a low level voltage. The low level voltage applied at the Q node turns-off transistors NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the QB_O and the QB_E nodes. Accordingly, the high level voltage Vdd_O is supplied to the QB_O node via the turned-on transistor NT4_O during the odd frame period. The high level voltage supplied to the QB_O node turns-on transistors NT3_O and NT7_O, whose gate electrodes are connected to the QB_O node. An additional discharge path is formed through the turned-on transistor NT3 a by turning on transistor NT3_O, and the output signal Vg_i is inversed to the low level voltage by turning on transistor NT7_O.
- During a time period D, the next stage output signal Vg_i+1 is inverted to the low level voltage, to thereby turn-off the transistor NT3 a. As described above, the QB_O node continually remains at the high level voltage provided by high level supply voltage Vdd_O supplied through the transistor NT4_O during the remaining odd frame period. Accordingly, the voltage at the Q node and the output signal Vg_i remains low during the remaining odd frame period. As described above, the QB_E node remains at the low level voltage provided by the transistor NT5 b_E, which is turned-on by high level supply voltage Vdd_O provided during the odd frame period.
- Now, the operation of the driving stage during the even frame period will be described. During a time period A of an even frame period, first to third clock signals C1 to C3 are low, and the start signal Vst or a high level voltage output signal Vg_i−1 from a previous stage is supplied to a gate electrode of the transistors NT1, NT5_O and NT5_E, to thereby turn-on the transistors NT1, NT5_O and NT5_E. When the transistors NT5_O and NT5_E are turned-on, low level supply voltage Vss supplies a low level voltage to the QB_O and the QB_E nodes via the transistors NT5_O and NT5_E. Accordingly, the QB_O and QB_E nodes are discharged, and QB_O and QB_E nodes are held at a low level voltage. The QB_O and QB_E nodes remain low, thereby holding transistors NT3_O, NT3_E, NT7_O, and NT7_E at a low level. Accordingly, a discharge path of the Q node is intercepted.
- When transistor NT1 is turned-on, supply voltage Vdd applies a high level voltage to a Q node, to thereby charge the Q node with a mid-level voltage Vm. The mid-level voltage Vm charged on the Q node turns on the transistors NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node. The transistors NT5 a_O and NT5 a_E provides a discharge path for the turned-on transistors NT5_O and NT5_E through the QB_O and the QB_E nodes by holding the QB_O and the QB_E nodes at a low level. When transistor NT6 is turned-on, because the first clock signal C1 remains low, a low level output signal is supplied to an output Vg_i of a current stage. A high level voltage of an even frame high level supply voltage Vdd_E turns-on the (4_E)th and the (5 b_O)th transistors NT4_E and NT5 b_O.
- When the transistor NT4_E is turned-on, supply voltage Vdd_E provides a high level voltage to a QB_E node and then the voltage on the QB_E node increases to the high level voltage. But, the QB_E node remains low because the transistors NT5_E and NT5 a_E have respectively wider channel width than the transistor NT4_E. Accordingly, the turned-on transistor NT4_E remains on due to the high level supply voltage Vdd_E supplied during the even frame period. The transistor NT5 b_O forms a discharge path forf the QB_O node. After the A time period, although the transistors NT5_O and NT5 a_O are turned-off, the (5 b_O)th transistor NT5 b_O continually maintains the turn-on state because of the high level supply voltage Vdd_E supplied during the even frame period, to thereby continually form the discharge path of the QB_O node during the even frame period.
- During a time period B, the first clock signal C1 is inverted from a low level voltage to the high level voltage, on the other hand, the start signal Vst is inverted from the high level voltage to the low level voltage. At this time, when the first transistor NT1 is turned-off, the discharge path of the Q node is intercepted. Thereby, while a voltage charged in a parasitic capacitance between the drain electrode and the gate electrode of the sixth transistor NT6 is added to a mid-level voltage Vm floated on the Q node, the voltage of the Q node increases higher than a threshold voltage of the transistor NT6. In other words, a bootstrapping effect pulls the voltage at the Q node higher than the voltage of the Q node during the A period. Accordingly, during the B time period, the transistor NT6 is turned-on and an output signal Vg_i increases due to the first clock signal C1 applied by turned-on transistor NT6. Further, the start signal Vst is inverted to the low level voltage to turn-off the transistors NT5_O and NT5_E, but transistors NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node held at a high level voltage, remain on. Accordingly, the discharge path of the QB_O and the QB_E nodes is maintained, to thereby maintain the low level voltage.
- During a time period C period, the first clock signal C1 is inverted from a high level voltage to a low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of the transistor NT3 a to turn-on the transistor NT3 a. When transistor NT3 a is turned-on, the high level voltage on the Q node is discharged through the transistor NT3 a, so that the voltage on the Q node is inverted to the low level voltage. The low level voltage at the Q node turns-off the transistors NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the QB_O and the QB_E nodes. Accordingly, high level supply voltage Vdd_E applies a high level signal to the QB_E node via the turned-on transistor NT4_E.
- The high level voltage supplied to the QB_E node turns-on the transistors NT3_E and NT7_E, whose gate electrodes are connected to the QB_E node. An additional discharge path is formed by the turned-on transistor NT3 a by turning on the transistor NT3_E, and the output signal Vg_i is inverted to the low level voltage by turning on transistor NT7_E. The QB_O node, as described above, maintains the low level voltage provided by transistor NT5 b_O, turned-on high level supply voltage Vdd_E during the even frame period.
- During a time period D, the next stage output signal Vg_i+1 is inverted to the low level voltage, to thereby turn-off transistor NT3 a. As described above, the QB_O node continually maintains the high level voltage provided by the high level supply voltage Vdd_E through the transistor NT4_O during the remaining even frame period. Accordingly, the voltage of the Q node and the output signal Vg_j remains low during the remaining even frame period.
-
FIG. 18 is another exemplary circuit diagram of a driving stage of the built-in gate driving circuit ofFIG. 15 . In an embodiment of the present invention, the driving waveform ofFIG. 16 can be applied toFIG. 18 . Accordingly, an operation of each stage applying the circuit of theFIG. 18 will be described in detail in reference to the (4 j+1)th stage (herein, j is 1, 2, 3, . . . , m−4). During a time period A period, first clock signal to third clock signal C1 to C3 are low, and the start signal Vst or a high level voltage of the previous stage output signal Vg_i−1 is supplied to a gate electrode of transistors NT1, NT43_O, NT43_E, NT5_O and NT5_E, to thereby turn on the transistors NT1, NT43_O, NT43_E, NT5_O and NT5_E. When the transistors NT43_O and NT43_E are turned on, a low level supply voltage Vss supplies a low level voltage to A_O and A_E nodes via the transistors NT43_O and NT43_E. In other words, the A_O and A_E nodes are discharged, thereby maintaining the low level voltage at the A_O and the A_E nodes. The low level voltage on the A_O and the A_E nodes turns-off transistors NT42_O and NT42_E. The high level supply voltage Vdd_O applies a high level voltage to the QB_O node during the odd frame period. The high level supply voltage Vdd_E applies a high level voltage to the QB_E node during the even frame period. - When transistors NT5_O and NT5_E are turned-on, a low level supply voltage Vss applies a low level voltage to the QB_O and the QB_E nodes via transistors NT5_O and NT5_E. In other words, the QB_O and QB_E nodes are discharged, so that a low level voltage is maintained at the QB_O and QB_E nodes. The QB_O and QB_E nodes maintain the low level voltage, so that the discharge of the QB_O and QB_E nodes turns off the (3_O)th, the (3_E)th, the (7_O)th, and the (7_E)th transistors NT3_O, NT3_E, NT7_O, and NT7_E.
- When the transistor NT1 is turned-on, a high level voltage from a high level supply voltage Vdd is supplied to a Q node, to thereby charge the Q node with a mid-level voltage Vm. The mid-level voltage Vm charged on the Q node turns-on transistors NT44_O, NT44_E, NT5 a_O, NT5 a_E, and NT6 on the Q node. The transistors NT44_O and NT44_E provide a discharge path to the turned-on transistors NT43_O and NT43_E through the A_O and the A_E nodes, so that the A_O and the A_E nodes remain at a low level. Also, transistors NT5 a_O and NT5 a_E additionally secure a discharge path for the turned-on transistors NT5_O and NT5_E through the QB_O and the QB_E nodes, so that the QB_O and the QB_E nodes remain at a low level.
- When transistor NT6 is turned-on, because the first clock signal C1 remains low, an output signal from the low level voltage is supplied to an output Vg_i of a current stage. A high level voltage from an odd frame high level supply voltage Vdd_O turns-on transistors NT41_O and NT5 b_E. When transistor NT41_O is turned-on, the high level voltage of the odd frame high level supply voltage Vdd_O is supplied to a A_O node and then the high level voltage is maintained at the A_O node. But, as described above, transistors NT43_O and NT44_O provide a discharge path to keep the A_O node at a low level voltage. The transistor NT41_O turned-on by the odd frame high level supply voltage Vdd_O remains continually on during the odd frame period. Transistor NT5 b_E provides a discharge path for the QB_E node. Following the time period A, although the transistors NT5_O, NT5_E, NT5 a_O, NT5 a_E are turned-off, transistor NT5 b_E is held continually on by the odd frame high level supply voltage Vdd_O during the odd frame period. Thus, the discharge path of the QB_E node remains active during the odd frame period.
- During a time period B period, the first clock signal C1 is inverted from the low level voltage to the high level voltage, on the other hand, the start signal Vst is inverted from the high level voltage to the low level voltage. At this time, when the first transistor NT1 is turned-off, the discharge path of the Q node is intercepted. Thereby, while a voltage charged in a parasitic capacitance between the drain electrode and the gate electrode of the sixth transistor NT6 is added to a mid-level voltage Vm floated on the Q node, the voltage of the Q node jumps higher than a threshold voltage of the transistor NT6. In other words, a bootstrapping effect causes the voltage at the Q node to increase to a higher voltage than during the time period A. Accordingly, during the time period B, transistor NT6 is turned-on and an output signal Vg_i is increased by the first clock signal C1 applied through the turn-on transistor NT6, to thereby be inverted to a high level voltage. Further, the start signal Vst is inverted to the low level voltage to turn-off the transistors NT43_O, NT43_E, NT5_O and NT5_E, but transistors NT44_O, NT44_E, NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node maintaining the high level voltage, remain low. Accordingly, the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes is maintained, thereby keeping the low level voltage.
- During a time period C, the first clock signal C1 is inverted from the high level voltage to the low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT3 a, which is then turned-on. When transistor NT3 a is turned-on, the high level voltage at the Q node is discharged through transistor NT3 a, so that the voltage on the Q node is inverted to the low level voltage. The low level voltage at the Q node turns-off transistors NT44_O, NT44_E, NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes. Accordingly, the odd frame high level supply voltage Vdd_O supplies a high level voltage via the turned-on transistor NT41_O to the A_O node, and the high level voltage at the A_O node turns-on the transistor NT42_O to supply the high level voltage from the high level supply voltage Vdd_O to the QB_O node. The high level voltage supplied to the QB_O node turns-on transistors NT3_O and NT7_O, whose gate electrodes are connected to the QB_O node. An additional discharge path is formed through the turned-on transistor NT3 a by turning on the transistor NT3_O, and the output signal Vg_i is inverted to a low level voltage by turning on transistor NT7_O.
- During a time period D, the next stage output signal Vg_j+1 is inverted to the low level voltage, thereby turning-off transistor NT3 a. As described above, the high level supply voltage Vdd_O holds the QB_O node continually high by supplying the odd frame high level voltage through transistors NT41_O and NT42_O during the remaining odd frame period. Accordingly, the voltage at the Q node and the output signal Vg_i remain at a low level during the remaining odd frame period. As described above, The QB_E node maintains the low level voltage provided by transistor NT5 b_E, which is turned-on by the odd frame high level supply voltage Vdd_O. The operation during the even frame period will be described as follows.
- During the time period A period, the first to the third clock signals C1 to C3 maintain a low level voltage, and the start signal Vst or a high level voltage from the previous stage output signal Vg_j−1 is supplied to a gate electrode of transistors NT1, NT43_O, NT43_E, NT5_O and NT5_E, thereby turning on the transistors NT1, NT43_O, NT43_E, NT5_O and NT5_E. When transistors NT43_O and NT43_E are turned-on, a low level voltage from a low potential supply voltage Vss is supplied to A_O and A_E nodes via the transistors NT43_O and NT43_E. In other words, the A_O and the A_E nodes are discharged, so that the low level voltage is maintained at the A_O and the A_E nodes. The low level voltage at the A_O and the A_E nodes turns-off transistor NT42_O and NT42_E. A high level supply voltage Vdd_O provides a high level voltage to the QB_O node during the odd frame period. The high level supply voltage Vdd_E provides a high level voltage to the QB_E node during the even frame period.
- When transistors NT5_O and NT5_E are turned-on, the low level supply voltage Vss applies a low level voltage to the QB_O and the QB_E nodes via transistors NT5_O and NT5_E. In other words, the QB_O and the QB_E nodes are discharged, so that the low level voltage is maintained at the QB_O and the QB_E nodes. The QB_O and the QB_E nodes maintain the low level voltage. The discharge of the QB_O and the QB_E nodes turns off transistors NT3_O, NT3_E, NT7_O, and NT7_E to intercept the discharge path of the Q node. When the first transistor NT1 is turned-on, the high level supply voltage Vdd applies a high level voltage to a Q node, to thereby charge the Q node with a mid-level voltage Vm. The mid-level voltage Vm charged on the Q node turns on transistors NT44_O, NT44_E, NT5 a_O, NT5 a_E, and NT6 at the Q node. The transistors NT44_O and NT44_E provide a discharge path for the turned-on transistors NT43_O and NT43_E through the A_O and the A_E nodes, so that the A_O and the A_E nodes remain at the low level voltage. Also, transistors NT5 a_O and NT5 a_E provide a discharge path for the turned-on transistors NT5_O and NT5_E through the QB_O and the QB_E nodes, thereby the QB_O and the QB_E nodes remain at the low level voltage.
- When transistor NT6 is turned on, because the first clock signal C1 is low, a current stage output signal Vg_i is supplied with the output signal of the low level voltage. A high level voltage from an even frame high level supply voltage Vdd_E turns-on transistors NT41_E and NTSb_O. When transistor NT41_E is turned-on, the even frame high level supply voltage Vdd_E applies a high level voltage to a A_E node. Then, the high level voltage is maintained at the A_E node. But, as described above, the discharge path is provided by transistors NT43_E and NT44_E, so that the A_E node maintains the low level voltage. The transistor NT41_E is turned on by the even frame high level supply voltage Vdd_E during the even frame period, and remains continually on. Transistor NT5 b_O forms the discharge path through the QB_O node. After the time period A, although transistors NT5_O, NT5_E, NT5 a_O, NT5 a_E are turned-off, the (5 b_O)th transistor NT5 b_O is kept continually on by the even frame high level supply voltage Vdd_E during the even frame period, to thereby continually form the discharge path through the QB_O node during the even frame period.
- During the time period B, the first clock signal C1 is inverted from the low level voltage to the high level voltage, on the other hand, the start signal Vst is inverted from the high level voltage to the low level voltage. Then, when transistor NT1 is turned-off, the discharge path of the Q node is intercepted. Thereby, while a voltage charged in a parasitic capacitance between the drain electrode and the gate electrode of transistor NT6 is added to a mid-level voltage Vm floated on the Q node, the voltage of the Q node increases higher than a threshold voltage of transistor NT6. In other words, a bootstrapping effect raises the voltage of the Q node to a higher voltage than that of the time period A. Accordingly, during the time period B, transistor NT6 is turned-on and an output signal Vg_i is increased by the voltage of the first clock signal C1 applied to transistor NT6, which is inverted to the high level voltage. Further, the start signal Vst is inverted to the low level voltage to turn-off transistors NT43_O, NT43_E, NT5_O and NT5_E, but transistors NT44_O, NT44_E, NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node maintaining the high level voltage, remain on. Accordingly, the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes is maintained, thereby holding the low level voltage.
- During the time period C, the first clock signal C1 is inverted from the high level voltage to the low level voltage, and the high level voltage of a next stage output signal Vg_i+1 is supplied to a gate terminal of transistor NT3 a to turn-on transistor NT3 a. When transistor NT3 a is turned-on, the high level voltage on the Q node is discharged through transistor NT3 a, so that the voltage on the Q node is inverted to the low level voltage. The low level voltage of the Q node turns-off transistors NT44_O, NT44_E, NT5 a_O and NT5 a_E, whose gate electrodes are connected to the Q node, to thereby intercept the discharge path of the A_O, the A_E, the QB_O and the QB_E nodes. Accordingly, the even frame high level supply voltage Vdd_E provides a high level voltage via the turned-on transistor NT41_E to the A_E node. The high level voltage at the A_E node turns-on transistor NT42_E to supply the high level voltage from the even frame high level supply voltage Vdd_E to the QB_E node. The high level voltage supplied to the QB_E node turns-on transistors NT3_E and NT7_E, whose gate electrodes are connected to the QB_E node. An additional discharge path is formed in the turned-on transistor NT3 a by turning on transistor NT3_E, and the output signal Vg_i is inverted to the low level voltage by turning on the transistor NT7_E.
- During the time period D, the next stage output signal Vg_i+1 is inverted to the low level voltage; to thereby turn-off transistor NT3 a. As described above, the QB_E node continually maintains the high level voltage from the even frame high level supply voltage Vdd_E supplied through transistors NT41_E and NT42_E during the remaining even frame period. Accordingly, the voltage of the Q node and the output signal Vg_i remain low during the remaining even frame period. The QB_O node, as described above, maintains the low level voltage provided by transistor NT5 b_O, which is turned-on by the even frame high level supply voltage Vdd_E. In embodiments of the present invention as depicted in
FIG. 16 , a time for applying the gate voltage of transistors NT4_O and NT4_E is long. In comparison, in embodiments of the present invention as depicted inFIG. 18 , a time for applying the gate voltage of transistors NT42_O and NT42_E becomes short due to transistors NT41_O, NT43_O, NT44_O, NT41_E, NT43_E, and NT44_E. Accordingly, a gate stress of transistors NT42_O and NT42_E can be reduced inFIG. 18 in comparison toFIG. 16 . Thus, deterioration of the transistor can be precented. -
FIG. 19 is a schematic view for an exemplary method of driving odd and even gate driving circuits according to the fourth embodiment of the present invention. Referring toFIG. 19 , the odd driving circuit 140 o includes 1st, 3rd, 5th, . . . , (n−1)-th odd stages. The even drivingcircuit 140 e includes 2nd, 4th, 6th, . . . , n-th even stages. The first stage 1st receives as a start pulse thestart signal Vst 1. The second stage 2nd receives as a start pulse the start signal Vst2. The start signal Vst2 is delayed by one clock period with respect to the start signal Vst1. Each of the remaining i-numbered odd stages 3rd, 5th, . . . , (n−1)-th receives as a start pulse an output signal Vg_i-2 from the previous (i−2)-numbered odd stage. Similarly, each of the remaining i-numbered even stages 2nd, 4th, 6th, . . . , n-th receives as a start pulse an output signal Vg_i−2 from the previous (i−2)-numbered even stage. For example, the fourth stage 4th receives start signal Vg_2 from the second stage. The third stage 3rd receives the start signal Vg_1 from the first stage 1st. Furthermore, each of the even and odd stages responds to one of first to fourth clock signals C1, C2, C3 and C4. The one clock signal is supplied by delaying two clock periods to apply the output signal Vg_i synchronized to the clock signal to the gate line Gi via an output buffer and a level-shifter (not shown). Furthermore, each of the odd and even stages 1st, 2nd, 3rd, 4th, . . . , and (n-1) receives as a reset pulse an output signal Vg_i+1 delayed by one clock period from a next stage (i+1)-th. The last stage n-th is provided with a reset pulse obtained from a dummy stage (not shown) by delaying one clock signal. The above driving method can be implementing using the exemplary driving stages depicted inFIGS. 16 and 18 . - Firstly, the gate driving circuit of
FIG. 19 includes a second start signal Vst2, supplied by delaying a first start signal Vst1 by one clock period. In comparison, the driving method ofFIG. 15 includes one start signal Vst. Further, in the driving method ofFIG. 15 , the start signal Vst is inputted and the clock signal is supplied by delaying by one clock period. In comparison, in the driving method ofFIG. 19 , the start signal Vst is inputted and the clock signal is supplied after delaying by two clock periods, therefore, the period when the Q node maintains the floated mid-level voltage increases by one clock period as shown inFIG. 20 . - As described above, according to embodiments of the present invention, the gate lines are divided into odd and even lines to make a bi-directional driving, thereby enlarging a pitch of one stage to correspond to two liquid crystal cells. Thus, a channel width of the output buffer can be increased. Accordingly, a distortion of the scanning pulse waveform at each stage of the driving circuit, which closely depends upon the channel width of the output buffer, can be reduced. Furthermore, the liquid crystal display panel will last longer because the life of the panel is directly dependent upon the channel width. In addition, in embodiments of the present invention, in the liquid crystal display panel with built-in driving circuit, a plurality of pull-down transistors is arranged in a space within the output buffer partitioned into odd/even driving stages, and the period for applying the gate voltage of the pull-down transistors is reduced. Accordingly, it is possible to reduce deterioration of the output buffer caused by the stress of the gate voltage. As a result, it is possible to extend the life span of the output buffer.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the liquid crystal display panel having built-in driving circuit of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (31)
Applications Claiming Priority (4)
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KR10-2004-38888 | 2004-05-31 | ||
KR20040038888 | 2004-05-31 | ||
KR1020040073106A KR20050118059A (en) | 2004-05-31 | 2004-09-13 | Liquid crystal display built-in driving circuit |
KR10-2004-73106 | 2004-09-13 |
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US20060007085A1 true US20060007085A1 (en) | 2006-01-12 |
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US11/139,663 Expired - Fee Related US7639226B2 (en) | 2004-05-31 | 2005-05-31 | Liquid crystal display panel with built-in driving circuit |
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Cited By (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050220262A1 (en) * | 2004-03-31 | 2005-10-06 | Lg Philips Lcd Co., Ltd. | Shift register |
US20050264724A1 (en) * | 2004-05-31 | 2005-12-01 | Lg.Philips Lcd Co., Ltd. | Driving circuit built-in liquid crystal display panel and fabricating method thereof |
US20070038909A1 (en) * | 2005-07-28 | 2007-02-15 | Kim Sung-Man | Scan driver, display device having the same and method of driving a display device |
US20070040792A1 (en) * | 2005-06-23 | 2007-02-22 | Samsung Electronics Co., Ltd. | Shift register for display device and display device including a shift register |
US20070063933A1 (en) * | 2005-09-13 | 2007-03-22 | Chung Bo Y | Emission control line driver and organic light emitting display using the emission control line driver |
US20070242001A1 (en) * | 2006-04-18 | 2007-10-18 | Dong Yong Shin | Scan driving circuit and organic light emitting display using the same |
US20080001899A1 (en) * | 2006-07-03 | 2008-01-03 | Wintek Corporation | Flat display structure |
US20080251787A1 (en) * | 2007-04-13 | 2008-10-16 | Bunggoo Kim | Thin film transistor substrate and flat panel display comprising the same |
US20080266477A1 (en) * | 2007-04-27 | 2008-10-30 | Samsung Electronics Co., Ltd. | Gate driving circuit and liquid crystal display having the same |
US20090153533A1 (en) * | 2007-12-13 | 2009-06-18 | Nec Electronics Corporation | Apparatus and method for driving liquid crystal display panel |
US20090167741A1 (en) * | 2007-12-27 | 2009-07-02 | Chi Mei Optoelectronics Corp. | Flat panel display and driving method thereof |
US20100007653A1 (en) * | 2008-07-08 | 2010-01-14 | Samsung Electronics Co., Ltd | Gate driver and display apparatus having the same |
US20100164915A1 (en) * | 2008-12-29 | 2010-07-01 | Hak-Gyu Kim | Gate driving circuit and display device having the gate driving circuit |
US20100177082A1 (en) * | 2009-01-13 | 2010-07-15 | Soong-Yong Joo | Gate driving circuit and display apparatus having the same |
US20110157263A1 (en) * | 2009-12-29 | 2011-06-30 | Samsung Electronics Co., Ltd. | Gate driving circuit and display apparatus including the same |
US20120044132A1 (en) * | 2010-02-26 | 2012-02-23 | Sony Corporation | Shift register, scanning line drive circuit, electro-optical device, and electronic apparatus |
US20120249518A1 (en) * | 2011-03-28 | 2012-10-04 | Won Myung-Ho | Display device |
US20120306844A1 (en) * | 2011-06-01 | 2012-12-06 | Hiroyuki Abe | Display device |
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US20140085285A1 (en) * | 2012-09-27 | 2014-03-27 | Lg Display Co., Ltd. | Gate shift register and display device comprising the same |
US20140159997A1 (en) * | 2012-07-24 | 2014-06-12 | Beijing Boe Optoelectronics Technology Co., Ltd. | Gate driving circuit, gate driving method, and liquid crystal display |
JP2014167841A (en) * | 2013-02-28 | 2014-09-11 | Kyocera Corp | Shift register circuit and image display device |
US20140375606A1 (en) * | 2013-06-25 | 2014-12-25 | Japan Display Inc. | Liquid crystal display device with touch panel |
US20150109353A1 (en) * | 2013-10-22 | 2015-04-23 | Hannstar Display Corporation | Liquid crystal display and bidirectional shift register device thereof |
US20150187247A1 (en) * | 2013-12-30 | 2015-07-02 | Samsung Display Co., Ltd. | Display panel and gate driver with reduced power consumption |
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US20160358564A1 (en) * | 2015-06-04 | 2016-12-08 | Wuhan China Star Optoelectronics Technology Co. Ltd. | Scan driving circuit |
JP2016212945A (en) * | 2016-05-31 | 2016-12-15 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US20170213499A1 (en) * | 2014-07-31 | 2017-07-27 | Lg Display Co., Ltd. | Display device |
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US20170323605A1 (en) * | 2015-08-24 | 2017-11-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Scan driving circuit |
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US20180046048A1 (en) * | 2016-01-07 | 2018-02-15 | Wuhan China Star Optoelectronics Technology Co. Ltd. | Gate driver on array circuit and liquid crystal display using the same |
US20180075791A1 (en) * | 2016-09-09 | 2018-03-15 | Boe Technology Group Co., Ltd. | Detection circuit and detection method for display device |
US10062716B2 (en) | 2006-09-29 | 2018-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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US20190096499A1 (en) * | 2017-09-26 | 2019-03-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, display panel and display device |
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US11508310B2 (en) * | 2020-09-11 | 2022-11-22 | Lg Display Co., Ltd. | Scan driver and organic light emitting display apparatus including the same |
JP2022179597A (en) * | 2009-03-27 | 2022-12-02 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US11568778B2 (en) * | 2020-09-30 | 2023-01-31 | Beijing Boe Display Technology Co., Ltd. | Gate driving circuit and driving method thereof and display panel |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101329791B1 (en) * | 2007-07-16 | 2013-11-15 | 삼성디스플레이 주식회사 | Liquid crystal display |
KR101607510B1 (en) * | 2008-11-28 | 2016-03-31 | 삼성디스플레이 주식회사 | Method for driving a gate line, gate line drive circuit and display apparatus having the gate line drive circuit |
CN102224539B (en) * | 2008-12-10 | 2013-10-23 | 夏普株式会社 | Scanning signal line driving circuit, shift register, and method of driving shift register |
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US9317151B2 (en) | 2012-05-14 | 2016-04-19 | Apple Inc. | Low complexity gate line driver circuitry |
CN103985346B (en) * | 2014-05-21 | 2017-02-15 | 上海天马有机发光显示技术有限公司 | TFT array substrate, display panel and display substrate |
US10037738B2 (en) * | 2015-07-02 | 2018-07-31 | Apple Inc. | Display gate driver circuits with dual pulldown transistors |
CN109669583B (en) * | 2019-01-04 | 2021-09-10 | 京东方科技集团股份有限公司 | Touch display device and driving method of touch display panel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030090614A1 (en) * | 2001-11-15 | 2003-05-15 | Hyung-Guel Kim | Liquid crystal display |
US6670943B1 (en) * | 1998-07-29 | 2003-12-30 | Seiko Epson Corporation | Driving circuit system for use in electro-optical device and electro-optical device |
US20050264507A1 (en) * | 2004-05-31 | 2005-12-01 | Lg. Philips Lcd Co., Ltd. | Driving circuit built-in liquid crystal display panel |
-
2005
- 2005-05-31 US US11/139,663 patent/US7639226B2/en not_active Expired - Fee Related
- 2005-05-31 KR KR1020050046395A patent/KR101137852B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6670943B1 (en) * | 1998-07-29 | 2003-12-30 | Seiko Epson Corporation | Driving circuit system for use in electro-optical device and electro-optical device |
US20030090614A1 (en) * | 2001-11-15 | 2003-05-15 | Hyung-Guel Kim | Liquid crystal display |
US20050264507A1 (en) * | 2004-05-31 | 2005-12-01 | Lg. Philips Lcd Co., Ltd. | Driving circuit built-in liquid crystal display panel |
Cited By (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7120221B2 (en) * | 2004-03-31 | 2006-10-10 | Lg. Philips Lcd Co., Ltd. | Shift register |
US20050220262A1 (en) * | 2004-03-31 | 2005-10-06 | Lg Philips Lcd Co., Ltd. | Shift register |
US20050264724A1 (en) * | 2004-05-31 | 2005-12-01 | Lg.Philips Lcd Co., Ltd. | Driving circuit built-in liquid crystal display panel and fabricating method thereof |
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US8299982B2 (en) * | 2005-09-13 | 2012-10-30 | Samsung Display Co., Ltd. | Emission control line driver and organic light emitting display using the emission control line driver |
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US20080251787A1 (en) * | 2007-04-13 | 2008-10-16 | Bunggoo Kim | Thin film transistor substrate and flat panel display comprising the same |
US8159446B2 (en) * | 2007-04-27 | 2012-04-17 | Samsung Electronics Co., Ltd. | Gate driving circuit utilizing dummy stages and liquid crystal display having the same |
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US20090153533A1 (en) * | 2007-12-13 | 2009-06-18 | Nec Electronics Corporation | Apparatus and method for driving liquid crystal display panel |
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US20090167741A1 (en) * | 2007-12-27 | 2009-07-02 | Chi Mei Optoelectronics Corp. | Flat panel display and driving method thereof |
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US10643563B2 (en) | 2011-06-01 | 2020-05-05 | Japan Display Inc. | Display device |
US20150346844A1 (en) * | 2011-06-01 | 2015-12-03 | Japan Display Inc. | Display device |
JP2013069400A (en) * | 2011-09-23 | 2013-04-18 | Hydis Technologies Co Ltd | Shift register and gate drive circuit using the same |
TWI497478B (en) * | 2012-03-21 | 2015-08-21 | Lg Display Co Ltd | Gate driving unit and liquid crystal display device having the same |
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US20140159997A1 (en) * | 2012-07-24 | 2014-06-12 | Beijing Boe Optoelectronics Technology Co., Ltd. | Gate driving circuit, gate driving method, and liquid crystal display |
US9886921B2 (en) * | 2012-07-24 | 2018-02-06 | Beijing Boe Optoelectronics Technology Co., Ltd. | Gate driving circuit, gate driving method, and liquid crystal display |
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JP7105332B2 (en) | 2012-09-07 | 2022-07-22 | 株式会社半導体エネルギー研究所 | semiconductor equipment |
US8994629B2 (en) * | 2012-09-27 | 2015-03-31 | Lg Display Co., Ltd. | Gate shift register and display device comprising the same |
US20140085285A1 (en) * | 2012-09-27 | 2014-03-27 | Lg Display Co., Ltd. | Gate shift register and display device comprising the same |
JP2014167841A (en) * | 2013-02-28 | 2014-09-11 | Kyocera Corp | Shift register circuit and image display device |
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US20140375606A1 (en) * | 2013-06-25 | 2014-12-25 | Japan Display Inc. | Liquid crystal display device with touch panel |
US10073556B2 (en) | 2013-06-25 | 2018-09-11 | Japan Display Inc. | Liquid crystal display device with touch panel |
US9459482B2 (en) * | 2013-06-25 | 2016-10-04 | Japan Display Inc. | Liquid crystal display device with touch panel |
US9508449B2 (en) * | 2013-10-22 | 2016-11-29 | Hannstar Display Corporation | Liquid crystal display and bidirectional shift register device thereof |
US20150109353A1 (en) * | 2013-10-22 | 2015-04-23 | Hannstar Display Corporation | Liquid crystal display and bidirectional shift register device thereof |
US20150187247A1 (en) * | 2013-12-30 | 2015-07-02 | Samsung Display Co., Ltd. | Display panel and gate driver with reduced power consumption |
US9711075B2 (en) * | 2013-12-30 | 2017-07-18 | Samsung Display Co., Ltd. | Display panel and gate driver with reduced power consumption |
US11137854B2 (en) * | 2014-07-31 | 2021-10-05 | Lg Display Co., Ltd. | Display device with shift register comprising node control circuit for Q and QB node potentials and reset circuit |
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US20170213499A1 (en) * | 2014-07-31 | 2017-07-27 | Lg Display Co., Ltd. | Display device |
KR20160017698A (en) * | 2014-07-31 | 2016-02-17 | 엘지디스플레이 주식회사 | Display Device |
US9792845B2 (en) * | 2015-06-04 | 2017-10-17 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Scan driving circuit |
US20160358564A1 (en) * | 2015-06-04 | 2016-12-08 | Wuhan China Star Optoelectronics Technology Co. Ltd. | Scan driving circuit |
US20170323605A1 (en) * | 2015-08-24 | 2017-11-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Scan driving circuit |
US9858874B2 (en) * | 2015-08-24 | 2018-01-02 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Scan driving circuit |
US9953555B2 (en) * | 2015-10-20 | 2018-04-24 | Boe Technology Group Co., Ltd. | Driving circuit for touch screen, in-cell touch screen and display apparatus |
US20170337862A1 (en) * | 2015-10-20 | 2017-11-23 | Boe Technology Group Co., Ltd. | Driving circuit for touch screen, in-cell touch screen and display apparatus |
US10068542B2 (en) * | 2016-01-07 | 2018-09-04 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Gate driver on array circuit and liquid crystal display using the same |
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US10262618B2 (en) * | 2016-01-07 | 2019-04-16 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Gate driver on array circuit and liquid crystal display using the same |
JP2016212945A (en) * | 2016-05-31 | 2016-12-15 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US20180075791A1 (en) * | 2016-09-09 | 2018-03-15 | Boe Technology Group Co., Ltd. | Detection circuit and detection method for display device |
CN107067052A (en) * | 2016-12-14 | 2017-08-18 | 宁波包芯菜信息科技发展有限公司 | Transferred product register system based on RFID |
US10223992B2 (en) * | 2016-12-27 | 2019-03-05 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Cascaded gate-driver on array driving circuit and display panel |
US10290275B2 (en) * | 2016-12-29 | 2019-05-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Driving circuit for multiple GOA units minimizing display border width |
US10388244B2 (en) * | 2017-03-03 | 2019-08-20 | Au Optronics Corporation | Display panel and driving method |
JP2017188108A (en) * | 2017-03-30 | 2017-10-12 | 株式会社ジャパンディスプレイ | Liquid crystal display device with touch panel |
CN107134246A (en) * | 2017-05-18 | 2017-09-05 | 华南理工大学 | A kind of drive element of the grid and row gated sweep driver and its driving method |
CN107507597A (en) * | 2017-08-02 | 2017-12-22 | 友达光电股份有限公司 | Image display panel and grid drive circuit thereof |
US10339854B2 (en) * | 2017-08-02 | 2019-07-02 | Au Optronics Corporation | Image display panel and gate driving circuit thereof |
US20190096499A1 (en) * | 2017-09-26 | 2019-03-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, display panel and display device |
US10580509B2 (en) * | 2017-09-26 | 2020-03-03 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Array substrate, display panel and display device |
US11074842B2 (en) * | 2018-06-08 | 2021-07-27 | Lg Display Co., Ltd. | Gate driving circuit and display device including the same |
TWI742681B (en) * | 2020-05-21 | 2021-10-11 | 友達光電股份有限公司 | Display device |
US11508310B2 (en) * | 2020-09-11 | 2022-11-22 | Lg Display Co., Ltd. | Scan driver and organic light emitting display apparatus including the same |
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US11749161B2 (en) * | 2020-09-30 | 2023-09-05 | Beijing Boe Display Technology Co., Ltd. | Gate driving circuit and driving method thereof and display panel |
US11568778B2 (en) * | 2020-09-30 | 2023-01-31 | Beijing Boe Display Technology Co., Ltd. | Gate driving circuit and driving method thereof and display panel |
JP2023093436A (en) * | 2021-12-22 | 2023-07-04 | 株式会社半導体エネルギー研究所 | Semiconductor device and display device |
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KR101137852B1 (en) | 2012-04-20 |
KR20060046339A (en) | 2006-05-17 |
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