US20050272621A1 - Composition and method for removing copper-compatible resist - Google Patents
Composition and method for removing copper-compatible resist Download PDFInfo
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- US20050272621A1 US20050272621A1 US11/185,856 US18585605A US2005272621A1 US 20050272621 A1 US20050272621 A1 US 20050272621A1 US 18585605 A US18585605 A US 18585605A US 2005272621 A1 US2005272621 A1 US 2005272621A1
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- copper
- resist
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- 239000000203 mixture Substances 0.000 title abstract description 23
- -1 amine compound Chemical class 0.000 claims abstract description 56
- 239000002798 polar solvent Substances 0.000 claims abstract description 20
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 33
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- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 9
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- 229960002887 deanol Drugs 0.000 claims description 6
- 239000012972 dimethylethanolamine Substances 0.000 claims description 6
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 5
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 45
- 229910052802 copper Inorganic materials 0.000 description 45
- 238000005260 corrosion Methods 0.000 description 35
- 230000007797 corrosion Effects 0.000 description 35
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 239000003112 inhibitor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 8
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 8
- 239000012964 benzotriazole Substances 0.000 description 8
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 7
- 238000007598 dipping method Methods 0.000 description 7
- 229960003540 oxyquinoline Drugs 0.000 description 7
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000012085 test solution Substances 0.000 description 3
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 description 1
- ZUXGRJFPTOXHIW-UHFFFAOYSA-N CNC1C(C#C)=C1CCO Chemical compound CNC1C(C#C)=C1CCO ZUXGRJFPTOXHIW-UHFFFAOYSA-N 0.000 description 1
- BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the present invention relates to a composition for removing copper (Cu)-compatible resist, and more particularly, to a composition for removing copper-compatible resist without corrosion of copper.
- a low resistance copper line is commonly used as an array line of an array substrate for a liquid crystal display (LCD) device, or in a circuit line of a semiconductor device to prevent resistance-capacitance (RC) delay.
- the copper line is commonly formed using a photolithographic process incorporating fine pattern technology.
- the photolithographic process is commonly used for fabricating semiconductor devices such as large scale integrated (LSI) circuits, very large scale integrated (VLSI) circuits, and display devices including LCD and plasma panel display (PDP) devices.
- FIG. 1 is a perspective view of a liquid crystal display device using a copper line according to the related art.
- a liquid crystal display (LCD) device 11 includes an upper substrate 5 , a lower substrate 10 , and a liquid crystal material layer 9 interposed between the upper and lower substrates 5 and 10 .
- the upper substrate 5 includes a color filter layer 7 , a black matrix 6 , and a common electrode 18 .
- the lower substrate 10 includes a pixel electrodes 17 formed at pixel regions “P,” and thin film transistors (TFTs) “T” that function as switching devices.
- TFTs thin film transistors
- the TFTs “T” are disposed in a matrix configuration and gate and data lines 14 and 22 are connected to each of the TFTs “T.”
- the pixel regions “P” are each defined by a crossing of the gate and data lines 14 and 22 , and a transparent pixel electrode 17 is formed at each of the pixel regions “P.”
- the transparent pixel electrode 17 and the common electrode 18 are made of a transparent conductive metal such as indium-tin-oxide (ITO) and indium-zinc-oxide (IZO), and the LCD device is driven by utilizing an electro-optical effect of the liquid crystal material layer 9 .
- the gate line 14 should be made of a low resistance material such as copper (Cu), and should be formed using a photolithographic process incorporating fine pattern technology.
- FIGS. 2A to 2 E are cross-sectional views of a photolithographic process for forming a metal line according to the related art.
- a metal layer 32 is formed on a substrate 30 by deposition of a metallic material.
- a photoresist (PR) 34 of positive or negative type is formed on the metal layer 32 .
- PR photoresist
- FIGS. 2A to 2 E a positive type PR will be illustrated. Even though the PR 34 may be formed on an entire or a predetermined region of the substrate 30 , the PR 34 is generally formed on the entire region of the substrate 30 .
- a photo mask 36 is disposed over the PR 34 of the substrate 30 .
- an exposure process is performed, wherein a light “L” such as an ultra violet (UV) ray and an X ray is irradiated onto the photo mask 36 .
- the photo mask 36 includes a transmitting portion “T” and a shielding portion “S,” wherein the light that passes through the transmitting portion “T” transforms the PR 34 .
- the PR 34 includes a first portion “A” where a material property of the PR 34 is maintained and a second portion “B” where a material property of the PR 34 is transformed. Since the PR 34 is potentially patterned according to the photo mask 36 , this pattern of the PR 34 is referred to as a latent image.
- the PR 34 (of FIG. 2B ) having the latent image is developed to form a resist pattern 35 that corresponds to the photo mask 36 (of FIG. 2B ).
- the first portion “A” (of FIG. 2B ) where the light “L” (of FIG. 2B ) is not irradiated remains to cover the metal layer 32 and the second portion (of FIG. 2B ) where the light “L” (of FIG. 2B ) is irradiated is eliminated to expose the metal layer 32 .
- the metal layer 32 (of FIG. 2C ) is etched using the resist pattern 35 as an etching mask, whereby a metal line of a specific shape is formed on the substrate 30 .
- FIG. 2E the resist pattern 35 (of FIG. 2D ) is eliminated and the metal line 38 of the specific shape is exposed.
- the metal line formed of copper may be easily corroded by conventional solvents that are used to remove the resist pattern during the photolithographic process. Accordingly, solvent compositions that include a corrosion inhibitor for preventing corrosion of copper may be used, as demonstrated by U.S. Pat. Nos. 5,417,877 and 5,556,482, which are hereby incorporated by reference.
- the corrosion inhibitors include mono-ethanol-amine (MEA) as a preferred amine.
- MEA mono-ethanol-amine
- a specific amount of corrosion inhibitor is required so that a removing property of the inhibitor is not degraded.
- the present invention is directed to a composition for removing a copper-compatible resist that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide an improved composition for removing a copper-compatible resist.
- Another object of the present invention is to provide a composition for removing a copper-compatible resist without a corrosion of a copper line when the copper line is substituted for an aluminum line.
- a composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.
- a method for removing a copper-compatible resist including combining about 10% to about 30% by weight of an amine compound with about 10% to about 80% by weight of a glycolether compound and about 10% to about 80% by weight of a polar solvent.
- FIG. 1 is a perspective view of a liquid crystal display device using a copper line according to the related art
- FIGS. 2A to 2 E are cross-sectional views of a photolithographic process for forming a metal line according to the related art
- FIG. 3 is a scanning electron microscope (SEM) image showing a corrosion state of an exemplary copper line by a composition including a monoethanolamine according to the present invention.
- FIG. 4 is a scanning electron microscope (SEM) image showing a corrosion state of another exemplary copper line by a composition including a N-methylethanolamine according to the present invention.
- FIG. 3 is a scanning electron microscope (SEM) image showing a corrosion state of an exemplary copper line by a composition including a monoethanolamine according to the present invention
- FIG. 4 is a scanning electron microscope (SEM) image showing a corrosion state of another exemplary copper line by a composition including a N-methylethanolamine according to the present invention.
- a surface of the copper line may not be smooth and may have a severely uneven.
- the copper line of FIG. 4 may have a relatively smoother surface as compared to the surface shown in FIG. 3 . Accordingly, an amine and a solvent which do not corrode the copper may be used, wherein a resist may be removed without corrosion because an excess of a corrosion inhibitor residue. Thus, the corrosion inhibitor may not degrade the removal when the solvent is evaporated.
- An exemplary composition for removing a copper-compatible resist according to the present invention may include an amine compound, a glycolether compound, and a polar solvent.
- the amine compound which is a strong alkali material, may penetrate into a polymer matrix of a resist that may have been transformed or bridged through a wet or dry etching process or by an ion implantation process, for example. Accordingly, the amine compound may break an attraction of internal molecules or may interrupt an interaction between molecules.
- the amine compound may transform the resist into a shapeless polymer cluster of a gel state by forming vacancies in weak portions of the resist on the copper line, and the resist may be removed.
- a secondary amine compound may be better than a tertiary amine compound in order to increase an activity of unshared electron pair of nitrogen (—N—).
- Table 1 shows exemplary basicity of the amine compound according to the present invention. TABLE 1 Classification Structure Ph 25% AQ sol n monoethanolamine primary 13.04 monoisopropanolamine primary 12.98 N-methylethanolamine secondary 13.11 dimethylethanolamine tertiary 12.77 I diethanolamine tertiary 13.00
- corrosion of copper by the amine compound may be independent of the basicity.
- the copper may become corroded only by the amine, wherein two hydrogen atoms attached to nitrogen atoms of alkanol (alkyl alcohol) are not substituted.
- the corrosion may become severe when the amine ratio of the amine compound is higher than about 30%.
- the amine ratio since the amine is easily evaporated at temperatures above about 70° C., the amine ratio may not be controllable.
- the amine ratio may be preferably within a range of about 10% to about 30% by weight.
- Glycolether compounds remove copper-compatible resists by dissolving resin of the resist. If a molecular weight of the glycolether compound is more than about 150, dissolving activity is reduced and solubility of the resist decreases. Accordingly, since a secondary amine compound is used, dissolving activity of the amine compound may also be reduced. Thus, the glycolether compound may preferably have a molecular weight less than about 150.
- the glycolether compound since the glycolether compound has a boiling point of more than about 180° C., a surface tension between the resist and the copper line may be reduced, thereby increasing resist removal efficiency. Moreover, since the glycolether compound has a relatively low freezing point and a relatively high ignition point, the glycolether compound is relatively safe for storage.
- Polar solvents for removing a copper-compatible resist may be selected from the following: N-methyl-2-pyrrolidinone; N,N-dimethylaceticamide; N,N-dimethylpormicamide; and N,N-dimethylimidazole.
- Polar solvents dissolve polymer clusters of gel state, which are transformed by an amine compound, into unit molecules. Accordingly, the polar solvents prevent re-adhesion of the resist during a cleaning process.
- Polar solvents such as N-methyl-2-pyrrolidinone include the amine compound, which is a functional group within the molecule, may help the amine compound penetrate into the resist, thereby removing the resist. However, N-methyl-2-pyrrolidinone has a low initial dissolution speed.
- N-methyl-2-pyrrolidinone has an tremendous solubility to photosensitive materials, the dissolved photosensitive material may not be educed.
- polar solvents such as N,N-dimethylaceticamide have a high initial dissolution speed, whereby dissolved photosensitive materials may be educed over a period of time and a possibility of re-adhesion increases.
- Table 2 shows exemplary corrosion of copper and a removal of resist when an amine compound, a glycolether compound and a polar solvent are individually used according to the present invention.
- Table 2 shows exemplary corrosion of copper and a removal of resist when an amine compound, a glycolether compound and a polar solvent are individually used according to the present invention.
- a first sample type tests corrosion of copper by forming a copper layer about 2000 ⁇ in thickness upon a glass substrate, coating a resist on the copper layer, and developing the resist.
- a second sample type tests removal of resist by forming a chromium (Cr) layer upon a glass substrate, coating a resist of the chromium layer, wet etching the resist, and treating the resist with a dry etching gas.
- Cr chromium
- Table 3 shows exemplary corrosion of copper of an amine compound according to the present invention. TABLE 3 Corrosion of copper dipping 70° C. 400 sec. monoethanolamine 0 monoisopropanolamine 3 N-methylethanolamine 10 dimethylethanolamine 10 diethylethanolamine 10
- the solvent compounds of Table 2 that corroded the copper layer were added to a test solution that included an amine compound, 45% by weight of a glycolether compound, and 45% by weight of a polar solvent. Accordingly, different amine compounds were selected including monoethanol, monoisoprpanolamine, N-methylethanolamine, dimethylethanolamine and diethylethanolamine.
- the test samples were dipped into the test solution at a temperature of about 70° C. for about 400 seconds.
- the test solution that included 45% by weight of a glycolether compound, 45% by weight of a polar solvent, and one of N-methylethanolamine, dimethylethanolamine and diethylethanolamine never corrodes the Cu layer.
- Table 4 shows ratios of a solvent composition for removing a copper-compatible resist according to the present invention.
- Table 4 shows ratios of a solvent composition for removing a copper-compatible resist according to the present invention.
- TABLE 4 Composition for removing_resist Amine compound Glycolether compound Polar solvent Additive kind wt % kind wt % kind wt % kind wt % ratio 1 NMEA 10 DEGEE 80 NMP 10 ratio 2 NMEA 10 DEGEE 60 NMP 30 ratio 3 NMEA 10 DEGEE 40 NMP 50 ratio 4 NMEA 10 DEGEE 20 NMP 70 ratio 5 NMEA 20 DEGEE 70 NMP 10 ratio 6 NMEA 20 DEGPE 60 NMP 20 ratio 7 NMEA 30 DEGPE 50 NMP 20 ratio 8 NMEA 30 DEGPE 10 NMP 60 comparison ratio 1 MEA 10 DEGBE 60 DMAc 30 comparison ratio 2 MEA 10 DEGBE 45 NMP 45 BT 2 comparison ratio 3 NMEA 10 DEGEE 60 NMP 30 8-HQ
- comparison ratios 1 and 2 monoethanolamine (MEA) was used as the amine compound.
- benzotriazole (BT) was added to the solvent composition as a corrosion inhibitor of the copper layer.
- comparison ratio 3 N-methylethanolamine (NMEA) was used as the amine compound, and 8-hydroxyquinoline (8-HQ) was added to the solvent solution as a corrosion inhibitor of the copper layer.
- Table 5 shows exemplary removal results of a resist when each composition of Table 4 is used according to the present invention
- Table 6 shows exemplary corrosion results of copper when each composition of Table 4 is used according to the present invention.
- Three different types of test samples were prepared.
- a first test sample was about 1 cm ⁇ 4 cm, and was prepared by etching an active layer (a-Si:H/n+a-Si:H) and removing a resist on the active layer.
- the second test sample was about 1 cm ⁇ 4 cm, and was prepared by forming a chromium (Cr) layer on a glass substrate, wet etching, treating with a dry etching gas, and removing a resist on the chromium layer.
- Cr chromium
- the third test sample was about 2 cm ⁇ 4 cm, and was prepared by coating a positive photoresist (DTFR-3650B: Dong-Jin semichem) on a glass, baking the resist at about 170° C. for about 5 minutes, and removing the photoresist. Residual photoresist of the first and second test samples was observed by a scanning electron microscope (SEM) and residual resist of the third test sample was observed by a naked eye.
- SEM scanning electron microscope
- a removal degree of the resist is expressed by an integer within a range of 0 to 10, wherein integer 0 indicates no removal of the resist, and integer 10 indicates complete removal of the resist.
- TABLE 5 (1) (2) (3) dipping 200 sec. dipping 60 sec. dipping 50 sec. ratio 1 10 10 7 ratio 2 10 10 5 ratio 3 10 10 8 ratio 4 10 10 7 ratio 5 10 10 8 ratio 6 10 10 10 ratio 7 10 10 3 ratio 8 10 10 8 comparison ratio 1 5 2 0 comparison ratio 4 2 1 0 0: no removal 10: complete removal
- the solvent composition may include about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.
- the amine compound may be selected from a group that includes N-methylethanolamine, N-ethylethanolamine, diethylethanolamine and dimethylethanolamine.
- the glycolether compound may be selected from a group that includes ethyleneglycolethylether, ethyleneglycolmethylether, ethyleneglycolbutylether, diethyleneglycolbutylether, diethyleneglycolethylether, diethyleneglycolmethylether and diethyleneglycolpropylether.
- the polar solvent may be selected from a group that includes N-methyl-2-pyrrolidinone, N,N-dimethylaceticamide, N,N-dimethylpormicamide and N,N-dimethylimidazole.
- N-methylethanolamine as the amine compound
- diethyleneglycolethylether or diethyleneglycolpropylether as the glycolether compound
- N-methyl-2-pyrrolidinone as the polar solvent
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Abstract
Description
- The present invention claims the benefit of the Korean Patent Application No. P2001-62527 filed in Korea on Oct. 10, 2001, which is hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a composition for removing copper (Cu)-compatible resist, and more particularly, to a composition for removing copper-compatible resist without corrosion of copper.
- 2. Discussion of the Related Art
- In general, a low resistance copper line is commonly used as an array line of an array substrate for a liquid crystal display (LCD) device, or in a circuit line of a semiconductor device to prevent resistance-capacitance (RC) delay. The copper line is commonly formed using a photolithographic process incorporating fine pattern technology. The photolithographic process is commonly used for fabricating semiconductor devices such as large scale integrated (LSI) circuits, very large scale integrated (VLSI) circuits, and display devices including LCD and plasma panel display (PDP) devices.
-
FIG. 1 is a perspective view of a liquid crystal display device using a copper line according to the related art. InFIG. 1 , a liquid crystal display (LCD)device 11 includes anupper substrate 5, alower substrate 10, and a liquidcrystal material layer 9 interposed between the upper andlower substrates upper substrate 5 includes a color filter layer 7, ablack matrix 6, and acommon electrode 18. Thelower substrate 10 includes apixel electrodes 17 formed at pixel regions “P,” and thin film transistors (TFTs) “T” that function as switching devices. The TFTs “T” are disposed in a matrix configuration and gate anddata lines data lines transparent pixel electrode 17 is formed at each of the pixel regions “P.” Thetransparent pixel electrode 17 and thecommon electrode 18 are made of a transparent conductive metal such as indium-tin-oxide (ITO) and indium-zinc-oxide (IZO), and the LCD device is driven by utilizing an electro-optical effect of the liquidcrystal material layer 9. Accordingly, thegate line 14 should be made of a low resistance material such as copper (Cu), and should be formed using a photolithographic process incorporating fine pattern technology. -
FIGS. 2A to 2E are cross-sectional views of a photolithographic process for forming a metal line according to the related art. InFIG. 2A , ametal layer 32 is formed on asubstrate 30 by deposition of a metallic material. Next, a photoresist (PR) 34 of positive or negative type is formed on themetal layer 32. InFIGS. 2A to 2E, a positive type PR will be illustrated. Even though thePR 34 may be formed on an entire or a predetermined region of thesubstrate 30, thePR 34 is generally formed on the entire region of thesubstrate 30. - In
FIG. 2B , aphoto mask 36 is disposed over thePR 34 of thesubstrate 30. Next, an exposure process is performed, wherein a light “L” such as an ultra violet (UV) ray and an X ray is irradiated onto thephoto mask 36. Thephoto mask 36 includes a transmitting portion “T” and a shielding portion “S,” wherein the light that passes through the transmitting portion “T” transforms thePR 34. Accordingly, thePR 34 includes a first portion “A” where a material property of thePR 34 is maintained and a second portion “B” where a material property of thePR 34 is transformed. Since thePR 34 is potentially patterned according to thephoto mask 36, this pattern of thePR 34 is referred to as a latent image. - In
FIG. 2C , the PR 34 (ofFIG. 2B ) having the latent image is developed to form aresist pattern 35 that corresponds to the photo mask 36 (ofFIG. 2B ). Specifically, the first portion “A” (ofFIG. 2B ) where the light “L” (ofFIG. 2B ) is not irradiated remains to cover themetal layer 32 and the second portion (ofFIG. 2B ) where the light “L” (ofFIG. 2B ) is irradiated is eliminated to expose themetal layer 32. - In
FIG. 2D , the metal layer 32 (ofFIG. 2C ) is etched using theresist pattern 35 as an etching mask, whereby a metal line of a specific shape is formed on thesubstrate 30. - In
FIG. 2E , the resist pattern 35 (ofFIG. 2D ) is eliminated and themetal line 38 of the specific shape is exposed. - However, the metal line formed of copper may be easily corroded by conventional solvents that are used to remove the resist pattern during the photolithographic process. Accordingly, solvent compositions that include a corrosion inhibitor for preventing corrosion of copper may be used, as demonstrated by U.S. Pat. Nos. 5,417,877 and 5,556,482, which are hereby incorporated by reference. The corrosion inhibitors include mono-ethanol-amine (MEA) as a preferred amine. In addition, a specific amount of corrosion inhibitor is required so that a removing property of the inhibitor is not degraded.
- Accordingly, the present invention is directed to a composition for removing a copper-compatible resist that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide an improved composition for removing a copper-compatible resist.
- Another object of the present invention is to provide a composition for removing a copper-compatible resist without a corrosion of a copper line when the copper line is substituted for an aluminum line.
- Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.
- In another aspect, a method for removing a copper-compatible resist including combining about 10% to about 30% by weight of an amine compound with about 10% to about 80% by weight of a glycolether compound and about 10% to about 80% by weight of a polar solvent.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principle of the invention. In the drawings:
-
FIG. 1 is a perspective view of a liquid crystal display device using a copper line according to the related art; -
FIGS. 2A to 2E are cross-sectional views of a photolithographic process for forming a metal line according to the related art; -
FIG. 3 is a scanning electron microscope (SEM) image showing a corrosion state of an exemplary copper line by a composition including a monoethanolamine according to the present invention; and -
FIG. 4 is a scanning electron microscope (SEM) image showing a corrosion state of another exemplary copper line by a composition including a N-methylethanolamine according to the present invention. - Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
-
FIG. 3 is a scanning electron microscope (SEM) image showing a corrosion state of an exemplary copper line by a composition including a monoethanolamine according to the present invention, andFIG. 4 is a scanning electron microscope (SEM) image showing a corrosion state of another exemplary copper line by a composition including a N-methylethanolamine according to the present invention. InFIG. 3 , a surface of the copper line may not be smooth and may have a severely uneven. On the other hand, the copper line ofFIG. 4 may have a relatively smoother surface as compared to the surface shown inFIG. 3 . Accordingly, an amine and a solvent which do not corrode the copper may be used, wherein a resist may be removed without corrosion because an excess of a corrosion inhibitor residue. Thus, the corrosion inhibitor may not degrade the removal when the solvent is evaporated. - An exemplary composition for removing a copper-compatible resist according to the present invention may include an amine compound, a glycolether compound, and a polar solvent. The amine compound, which is a strong alkali material, may penetrate into a polymer matrix of a resist that may have been transformed or bridged through a wet or dry etching process or by an ion implantation process, for example. Accordingly, the amine compound may break an attraction of internal molecules or may interrupt an interaction between molecules. The amine compound may transform the resist into a shapeless polymer cluster of a gel state by forming vacancies in weak portions of the resist on the copper line, and the resist may be removed. Accordingly, corrosion may be reduced when an amine having alkyl radical attached to nitrogen (—N) is included by a solvent. Moreover, a secondary amine compound may be better than a tertiary amine compound in order to increase an activity of unshared electron pair of nitrogen (—N—).
- Table 1 shows exemplary basicity of the amine compound according to the present invention.
TABLE 1 Classification Structure Ph 25% AQ sol n monoethanolamine primary 13.04 monoisopropanolamine primary 12.98 N-methylethanolamine secondary 13.11 dimethylethanolamine tertiary 12.77 I diethanolamine tertiary 13.00 - In general, corrosion of copper by the amine compound may be independent of the basicity. The copper may become corroded only by the amine, wherein two hydrogen atoms attached to nitrogen atoms of alkanol (alkyl alcohol) are not substituted. Especially, the corrosion may become severe when the amine ratio of the amine compound is higher than about 30%. Furthermore, since the amine is easily evaporated at temperatures above about 70° C., the amine ratio may not be controllable. Thus, the amine ratio may be preferably within a range of about 10% to about 30% by weight.
- Glycolether compounds remove copper-compatible resists by dissolving resin of the resist. If a molecular weight of the glycolether compound is more than about 150, dissolving activity is reduced and solubility of the resist decreases. Accordingly, since a secondary amine compound is used, dissolving activity of the amine compound may also be reduced. Thus, the glycolether compound may preferably have a molecular weight less than about 150.
- Compounds without ether bonds, i.e., alkyleneglycol compounds, may corrode a copper line resulting in pinholes on surfaces of the copper line. Conversely, dissolving of amine compounds may be obtained by using diethyleneglycolmethylether or diethyleneglycolethylether, which have boiling points of more than about 180° C. and may be easily mixed with water. Accordingly, even when the resist is removed during a high temperature process, a composition ratio of the glycolether compound may be constant because of the relatively high boiling point of the glycolether compound. Thus, a removal rate of the copper-compatible resist can be made constant throughout the dissolving process. In addition, since the glycolether compound has a boiling point of more than about 180° C., a surface tension between the resist and the copper line may be reduced, thereby increasing resist removal efficiency. Moreover, since the glycolether compound has a relatively low freezing point and a relatively high ignition point, the glycolether compound is relatively safe for storage.
- Polar solvents for removing a copper-compatible resist may be selected from the following: N-methyl-2-pyrrolidinone; N,N-dimethylaceticamide; N,N-dimethylpormicamide; and N,N-dimethylimidazole. Polar solvents dissolve polymer clusters of gel state, which are transformed by an amine compound, into unit molecules. Accordingly, the polar solvents prevent re-adhesion of the resist during a cleaning process. Polar solvents such as N-methyl-2-pyrrolidinone include the amine compound, which is a functional group within the molecule, may help the amine compound penetrate into the resist, thereby removing the resist. However, N-methyl-2-pyrrolidinone has a low initial dissolution speed. Accordingly, since N-methyl-2-pyrrolidinone has an tremendous solubility to photosensitive materials, the dissolved photosensitive material may not be educed. Conversely, polar solvents such as N,N-dimethylaceticamide have a high initial dissolution speed, whereby dissolved photosensitive materials may be educed over a period of time and a possibility of re-adhesion increases.
- Table 2 shows exemplary corrosion of copper and a removal of resist when an amine compound, a glycolether compound and a polar solvent are individually used according to the present invention. In Table 2, two different types of samples are prepared. A first sample type tests corrosion of copper by forming a copper layer about 2000 Å in thickness upon a glass substrate, coating a resist on the copper layer, and developing the resist. A second sample type tests removal of resist by forming a chromium (Cr) layer upon a glass substrate, coating a resist of the chromium layer, wet etching the resist, and treating the resist with a dry etching gas. In addition, in Table 2, monoethanolamine, N-methylethanolamine, N-methyl-2-pyrrolidinone, N,N-dimethylaceticamide, diethyleneglycolethylether, diethyleneglycolbutylether, and tetraethyleneglycol are selected as solvent compounds.
TABLE 2 Corrosion of copper dipping Removal of resist 70° C. 20 min. dipping 70° C. 1 min. monoethanolamine entire corrosion complete removal 10 N-ethylethanolamine entire corrosion complete removal 10 N-methyl-2-pyrrolidinone no corrosion no removal 0 N,N-dimethylaceticamide no corrosion partial removal 5 diethyleneglycolethylether no corrosion partial removal 5 diethyleneglycolbutylether no corrosion no removal 0 tetraethyleneglycol uniform pit partial removal 5 - In Table 2, even though the amine compound such as monoethanolamine and N-ethylethanolamine fully corrode the copper layer of the first sample type, pit formation in the copper layer does not result. Accordingly, the results shown in Table 2 may suggest a controllability of corrosion of the copper layer. Conversely, even though the glycolether compound such as tetraethyleneglycol does not corrode the copper layer, corrosion control may be impossible due to pit formation in the copper layer.
- Table 3 shows exemplary corrosion of copper of an amine compound according to the present invention.
TABLE 3 Corrosion of copper dipping 70° C. 400 sec. monoethanolamine 0 monoisopropanolamine 3 N- methylethanolamine 10 dimethylethanolamine 10 diethylethanolamine 10 - In Table 3, the solvent compounds of Table 2 that corroded the copper layer were added to a test solution that included an amine compound, 45% by weight of a glycolether compound, and 45% by weight of a polar solvent. Accordingly, different amine compounds were selected including monoethanol, monoisoprpanolamine, N-methylethanolamine, dimethylethanolamine and diethylethanolamine. The test samples were dipped into the test solution at a temperature of about 70° C. for about 400 seconds. As shown in Table 3, the test solution that included 45% by weight of a glycolether compound, 45% by weight of a polar solvent, and one of N-methylethanolamine, dimethylethanolamine and diethylethanolamine never corrodes the Cu layer.
- Table 4 shows ratios of a solvent composition for removing a copper-compatible resist according to the present invention.
TABLE 4 Composition for removing_resist Amine compound Glycolether compound Polar solvent Additive kind wt % kind wt % kind wt % kind wt % ratio 1 NMEA 10 DEGEE 80 NMP 10 ratio 2 NMEA 10 DEGEE 60 NMP 30 ratio 3 NMEA 10 DEGEE 40 NMP 50 ratio 4 NMEA 10 DEGEE 20 NMP 70 ratio 5NMEA 20 DEGEE 70 NMP 10 ratio 6NMEA 20 DEGPE 60 NMP 20 ratio 7 NMEA 30 DEGPE 50 NMP 20 ratio 8 NMEA 30 DEGPE 10 NMP 60 comparison ratio 1 MEA 10 DEGBE 60 DMAc 30 comparison ratio 2 MEA 10 DEGBE 45 NMP 45 BT 2 comparison ratio 3 NMEA 10 DEGEE 60 NMP 30 8-HQ 2 comparison ratio 4 NMEA 10 DEGEE 90
MEA: monoethanolamine
NMP: N-methyl-2-pyrrolidinone
NMEA: N-methylethanolamine
DMPD: dimethyl-2-piperidone
DEGEE: diethyleneglycolethylether
DMAc: N,N-dimethylaceticamide
DEGPE: diethyleneglycolpropylether
BT: benzotriazole
DEGBE: diethyleneglycolbutylether
8-HQ: 8-hydroxyquinoline
- In Table 4, comparison ratios 1 and 2, monoethanolamine (MEA) was used as the amine compound. In comparison ratio 2, benzotriazole (BT) was added to the solvent composition as a corrosion inhibitor of the copper layer. In comparison ratio 3, N-methylethanolamine (NMEA) was used as the amine compound, and 8-hydroxyquinoline (8-HQ) was added to the solvent solution as a corrosion inhibitor of the copper layer.
- Table 5 shows exemplary removal results of a resist when each composition of Table 4 is used according to the present invention, and Table 6 shows exemplary corrosion results of copper when each composition of Table 4 is used according to the present invention. Three different types of test samples were prepared. A first test sample was about 1 cm×4 cm, and was prepared by etching an active layer (a-Si:H/n+a-Si:H) and removing a resist on the active layer. The second test sample was about 1 cm×4 cm, and was prepared by forming a chromium (Cr) layer on a glass substrate, wet etching, treating with a dry etching gas, and removing a resist on the chromium layer. The third test sample was about 2 cm×4 cm, and was prepared by coating a positive photoresist (DTFR-3650B: Dong-Jin semichem) on a glass, baking the resist at about 170° C. for about 5 minutes, and removing the photoresist. Residual photoresist of the first and second test samples was observed by a scanning electron microscope (SEM) and residual resist of the third test sample was observed by a naked eye. In Tables 5 and 6, a removal degree of the resist is expressed by an integer within a range of 0 to 10, wherein integer 0 indicates no removal of the resist, and
integer 10 indicates complete removal of the resist.TABLE 5 (1) (2) (3) dipping 200 sec. dipping 60 sec. dipping 50 sec. ratio 1 10 10 7 ratio 2 10 10 5 ratio 3 10 10 8 ratio 4 10 10 7 ratio 510 10 8 ratio 610 10 10 ratio 7 10 10 3 ratio 8 10 10 8 comparison ratio 1 5 2 0 comparison ratio 4 2 1 0
0: no removal
10: complete removal
-
TABLE 6 (4) dipping 400 sec. ratio 1 10 ratio 2 10 ratio 3 10 ratio 4 10 ratio 510 ratio 610 ratio 7 10 ratio 8 10 comparison ratio 1 0 comparison ratio 2 0 comparison ratio 3 5 (severe pit) - In Tables 5 and 6, the polar solvent corrodes even the active layer in the case of comparison ratio 4. In the case of ratios 1 to 8 of Table 5, the resist treated with the dry etching gas is completely removed. Conversely, in the case of comparison ratio 4 of Table 5, the resist is not removed. Accordingly, solubility of the hardened resist is high in ratios 1 to 8, and solubility of the hardened resist is low in comparison ratio 4.
- In the case of comparison ratios 1 and 2 of Table 6, the composition including monoethanolamine (MEA) severely corrodes the copper layer. For the comparison ratio 2, even though benzotriazole (BT) includes a complex with copper and an unshared electron pair of nitrogen (N) is added as a corrosion inhibitor, BT is deficient in preventing corrosion of the copper. For the comparison ratio 3, even though 8-hydroxyquinoline (8-HQ) is added as a corrosion inhibitor, a pit is generated in the copper layer because an unshared electron pair of the nitrogen does not include a complex with the copper.
- Therefore, an exemplary composition for removing copper-compatible resist may be suggested as follows according to the present invention. The solvent composition may include about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent. The amine compound may be selected from a group that includes N-methylethanolamine, N-ethylethanolamine, diethylethanolamine and dimethylethanolamine. The glycolether compound may be selected from a group that includes ethyleneglycolethylether, ethyleneglycolmethylether, ethyleneglycolbutylether, diethyleneglycolbutylether, diethyleneglycolethylether, diethyleneglycolmethylether and diethyleneglycolpropylether. The polar solvent may be selected from a group that includes N-methyl-2-pyrrolidinone, N,N-dimethylaceticamide, N,N-dimethylpormicamide and N,N-dimethylimidazole.
- In the present invention, it may be preferable to use N-methylethanolamine as the amine compound, diethyleneglycolethylether or diethyleneglycolpropylether as the glycolether compound, and N-methyl-2-pyrrolidinone as the polar solvent.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the organic electroluminescent display of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (8)
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KR101070689B1 (en) * | 2003-08-27 | 2011-10-07 | 주식회사 동진쎄미켐 | Composition for removing a photoresist |
CN1950755B (en) * | 2004-05-07 | 2011-05-11 | 株式会社东进世美肯 | composition for removing photoresist |
US7112470B2 (en) * | 2004-09-15 | 2006-09-26 | International Business Machines Corporation | Chip dicing |
KR101136026B1 (en) * | 2004-09-24 | 2012-04-18 | 주식회사 동진쎄미켐 | Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same |
WO2013052809A1 (en) | 2011-10-05 | 2013-04-11 | Avantor Performance Materials, Inc. | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
US9223221B2 (en) | 2012-03-16 | 2015-12-29 | Basf Se | Photoresist stripping and cleaning composition, method of its preparation and its use |
SG11201603122XA (en) | 2013-10-21 | 2016-05-30 | Fujifilm Electronic Materials | Cleaning formulations for removing residues on surfaces |
KR101964901B1 (en) | 2013-12-06 | 2019-04-02 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | Cleaning formulation for removing residues on surfaces |
WO2016052255A1 (en) * | 2014-09-30 | 2016-04-07 | 富士フイルム株式会社 | Method for manufacturing tft substrate, organic el display device, method for manufacturing organic el display device, liquid crystal display device, and method for manufacturing liquid crystal display device |
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US5556482A (en) * | 1991-01-25 | 1996-09-17 | Ashland, Inc. | Method of stripping photoresist with composition containing inhibitor |
US5795702A (en) * | 1995-09-29 | 1998-08-18 | Tokyo Ohka Kogyo Co, Ltd. | Photoresist stripping liquid compositions and a method of stripping photoresists using the same |
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
US6500270B2 (en) * | 1997-10-28 | 2002-12-31 | Sharp Corporation | Resist film removing composition and method for manufacturing thin film circuit element using the composition |
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
US6218087B1 (en) * | 1999-06-07 | 2001-04-17 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist stripping liquid composition and a method of stripping photoresists using the same |
US20010021489A1 (en) * | 1999-12-28 | 2001-09-13 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
US6524376B2 (en) * | 2000-01-25 | 2003-02-25 | Nec Corporation | Anticorrosive agent |
US20020128164A1 (en) * | 2000-11-30 | 2002-09-12 | Tosoh Corporation | Resist stripper |
US20030181344A1 (en) * | 2002-03-12 | 2003-09-25 | Kazuto Ikemoto | Photoresist stripping composition and cleaning composition |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060264348A1 (en) * | 2005-05-18 | 2006-11-23 | William Edwards | Liquid composition for reducing toilet odor |
US7449441B2 (en) * | 2005-05-18 | 2008-11-11 | Toilex, Llc | Liquid composition for reducing toilet odor |
Also Published As
Publication number | Publication date |
---|---|
US6958312B2 (en) | 2005-10-25 |
KR100438015B1 (en) | 2004-06-30 |
KR20030030399A (en) | 2003-04-18 |
US7662763B2 (en) | 2010-02-16 |
US20030144162A1 (en) | 2003-07-31 |
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