US20050236276A1 - Method for coating substrates in inline installations - Google Patents

Method for coating substrates in inline installations Download PDF

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Publication number
US20050236276A1
US20050236276A1 US10/996,812 US99681204A US2005236276A1 US 20050236276 A1 US20050236276 A1 US 20050236276A1 US 99681204 A US99681204 A US 99681204A US 2005236276 A1 US2005236276 A1 US 2005236276A1
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United States
Prior art keywords
coating
model
substrate
chamber
sputter
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US10/996,812
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English (en)
Inventor
Albert Kastner
Michael Geisler
Thomas Leipnitz
Jurgen Bruch
Andreas Pflug
Bernd Szyszka
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Applied Materials GmbH and Co KG
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Individual
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Assigned to APPLIED FILMS GMBH & CO. KG reassignment APPLIED FILMS GMBH & CO. KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PFLUG, ANDREAS, SZYSZKA, BERND, LEIPNITZ, THOMAS, GEISLER, MICHAEL, BRUCH, JURGEN, KASTNER, ALBERT
Publication of US20050236276A1 publication Critical patent/US20050236276A1/en
Assigned to APPLIED MATERIALS GMBH & CO. KG reassignment APPLIED MATERIALS GMBH & CO. KG CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: APPLIED FILMS GMBH & CO. KG
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the invention relates to a method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated.
  • Such inline installations consist of several coating chambers, which are serially arrayed and in which substrates are preferably coated by means of a sputter process.
  • the substrates are moved past sputter arrangements while being coated continuously, such that a layer of specific thickness is produced.
  • the sputter arrangements are each located in coating chambers, which are connected with adjacent chambers via connection or transport channels.
  • the vacuum conductivity of the transport channels is low compared with the vacuum conductivity of a coating chamber in the transverse direction.
  • the adjacent chamber can be further coating chambers or pump compartments.
  • the pump compartments establish differential pumping stages between the coating chambers such that between the coating chambers a certain gas separation is ensured, which, however, is not complete. This approach is important to an economical operating process.
  • This model describes reactive sputtering by means of the reactive gas flow to the target and to the substrate, by means of sputter yields with pure and oxidized target, by means of adhesion coefficient of the reactive molecules with respect to the substrates and the target, and by means of the ion stream to the target surface.
  • the principal factors of reactive sputtering, such as hysteresis, effects of pumping rate, etc., are herein taken into consideration, however, not the plasma physics and chemistry of the glow discharge.
  • Plasma chemistry in contrast, was taken into consideration by Ershov and Pekker (Model of d.c.magnetron reactive sputtering in Ar—O 2 gas mixtures (Thin Solid Films 289, 1996, pp. 140-146).
  • Gas and sputtered particle transports between the volume elements are first calculated in detail with the aid of parallel Monte Carlo methods.
  • the vacuum conductances obtained herefrom and the particle distribution matrices are later substituted into the kinetic macroscopic model.
  • a high fidelity to detail in three-dimensional installations is obtained, connected with a calculation efficiency, which makes the system usable for real-time applications.
  • the Linux cluster consists of several connected PCs, which operate under the operating system Linux. “Cluster” means first that several processors calculate a problem in parallel. In practice, a cluster is often built from commercially available PCs for reasons of cost, and the best cost/benefit ratio is often obtained with dual board PCs. The PCs are networked with one another via a separate network, in order to be able to handle the necessary communication between the subprocesses during the calculation.
  • the invention has as its aim to provide a method with the application of which the coating of a substrate has a uniform thickness in the direction of movement of the substrate through the coating chamber.
  • a model of the coating installation is used, which exactly describes the receptacle, including the volume form and the surface form as well as all three-dimensionally resolved partial pressures and partial flows, as they are developed spatially and in time corresponding to the sources and sinks of all chemical products, including the electrons and ions.
  • a model of the sputter and deposition process is formed.
  • the advantage achieved with the invention consists in particular therein that during the coating process also parameters can be taken into consideration, which are not accessible to direct measurement during the coating process, for example the sputter rates at the coating targets or the mean deposition rate on the substrate. While the layer thickness can be measured with the aid of in situ spectroscopy, however, for the determination of the coating rate at least two layer thicknesses must be determined at two points in time. Because of the substrate movement, this is nearly impossible unless the optical systems are also moved along in the direction of movement. Through simulated virtual regulation circuits, thus either the sputter rates or the mean coating rate on the substrate can be kept constant. If the sputter rates of, for example, two targets are successfully kept constant through a correction protocol, it would also yield a constant coating rate.
  • operating conditions are here understood the gas pressures between target and substrate as well as the sputter rates of the targets, which are not directly accessible from the outside. For example, the pressure is not measured directly between target and substrate, but rather at an arbitrary site on a receptacle wall. Tests in coating systems consisting of several targets, for example a double cathode, have shown that, as a rule, constancy in time of the operating conditions of all targets cannot be achieved with a simple regulation protocol.
  • the sputter rates of the individual targets show characteristic time courses, which in the application of the regulation protocol on the substrate, are on average compensated to a uniform coating rate.
  • more complicated correction protocols for example two independent correction curves for a right and a left gas inlet, it would also be possible to keep the sputter conditions at two targets constant.
  • a simple regulation protocol rather causes a further additional fluctuation in specific process parameters, with the aid of which an initially present layer thickness inhomogeneity on the substrate in the direction of movement of all particle flows is on average compensated.
  • the regulation protocol also depends on the material and operating point of the sputter process.
  • the sputter model in these cases can be calibrated for a target material to a specific parameter range of the sputter process and can output in short time the correspondingly required regulation protocol within this range.
  • FIG. 1 shows a cross section through a sputter chamber
  • FIG. 2 shows a schematic illustration of an employed model of a sputter chamber
  • FIG. 3 shows a detailed illustration of a simulated virtual control without in situ process regulation
  • FIG. 4 shows a detailed illustration of a simulated virtual control with in situ process regulation.
  • FIG. 1 shows a sputter chamber 1 , which comprises the coating chamber 2 proper and two buffer chambers 3 , 4 . Adjoining this sputter chamber 1 can be on the right and/or the left further sputter chambers, which are not shown here.
  • a substrate 5 is transported from the left to the right via transport rollers 6 supported in a carrier 7 .
  • Above each buffer chamber 3 , 4 is located a pump chamber 8 , 9 , and above each pump chamber 8 , 9 a pump 10 , 11 is disposed.
  • the pumps 10 , 11 are turbo pumps with a fixedly specified nominal rotational speed and at this speed have a fixed evacuation capacity. In the model selected here, the fixed evacuation capacity of pumps 10 , 11 enters in as a fixed value.
  • an installation cover 12 On whose underside a cathode mounting 13 is fastened which bears a cathode 14 with a target 15 .
  • An anode 16 located beneath the target 15 is fastened on a mounting 17 , which incorporates a cooling system 18 and via an insulation 19 is connected with a wall 20 of the coating chamber 2 .
  • Adjacent to the anode 16 are provided supply lines 21 for sputter gases.
  • cathode cooling water tubes 23 , 24 which serve for the forward and return flow of cooling water.
  • By 25 is denoted the cathode terminal.
  • a slot lock 26 connects the coating chamber 2 with the buffer chamber 4 .
  • FIG. 1 shows only one cathode 14 or one target 15 , respectively, the invention can also be applied in installations with two or more targets.
  • a pressure sensor which is connected across a line 27 with a control 28 , which includes a model of the sputter chamber 1 .
  • the gas pressure in the coating chamber 2 is correspondingly controlled via control lines 29 , 30 and valves 31 , 32 as well as the cathode-anode voltage across lines 33 , 34 .
  • the position of the front edge 35 of substrate 5 is either continuously measured or calculated. If it is calculated, it is required to record the point in time of the introduction of the substrate into the sputter chamber 1 or coating chamber 2 .
  • the position value of substrate 5 is reported across a control line 36 to the control 28 .
  • control 28 can now be set such that uniform coating takes place in the direction of movement of the substrate 5 .
  • FIG. 2 shows a schematic illustration of the utilized model of a sputter chamber. This model does not refer to FIG. 1 , but rather to a chamber with several targets.
  • the dynamic macroscopic model 40 of the reactive sputtering calculates the interaction between the sputtering process and the glass flow kinetics of the receptacle in a virtual sputter installation, which represents a subregion of the real sputter chamber 1 according to FIG. 1 .
  • This subregion comprises a number of M virtual sputter targets 41 to 43 as well as a portion of the receptacle volume in the sputter region, which is represented in the simulation in the form of 44 , 45 , 46 , 47 .
  • Model 40 permits an arbitrary number of virtual sputter targets 41 to 43 , in order to be able to simulate therewith for example also the behavior of double cathodes, etc.
  • the reference numbers 59 , 62 , 65 indicate the sputtered-off particles, which are subsequently distributed over branches 60 , 61 and 63 , 64 , respectively.
  • the coefficients 48 , 49 , 50 of the flow conductances and 51 , 52 , 53 , 54 , of the effective evacuation capacity are determined with the aid of the so-called “Direct Simulation Monte Carlo” (DSMC) method.
  • DSMC Direct Simulation Monte Carlo
  • N cells 44 to 47 the totality of all coefficients 48 , 49 , 50 forms a symmetric N*N matrix.
  • separate software is available, which is embodied as a parallel algorithm and which can calculate on a Linux cluster a realistic three-dimensional pressure and flow profile of receptacles through which flows gas. This method must be repeated for different positions of the substrate 5 , such that the coefficients 48 to 50 and 51 to 54 are transferred to the dynamic model 40 in the form of functions of the substrate position.
  • coefficients which, for example, correspond to the gettering areal fractions of the target surface of target 41 in cell 44 .
  • the totality of all coefficients forms an M*N matrix.
  • each cell 44 to 47 is associated a substrate surface 55 to 58 .
  • the fraction of the sputtered material from target 41 to 43 on substrate surface 55 to 58 is determined by the coefficients 60 , 61 , 63 , 64 , 65 , which in their totality can also be presented as an M*N matrix.
  • each cell 44 to 47 of the dynamic model 40 now one sputter model analogous to Berg et al. (S. Berg, H.-O. Blohm, T. Larsson, and C. Nender: Modeling of reactive sputtering of compound materials, J. Vac. Sci. Technol. A5(2), March/April 1987, pp. 202-207) is utilized.
  • the coupling of cells 44 to 47 is accordingly given by the flow conductances 48 to 50 and targets 41 to 43 with their areal fractions and sputter fractions.
  • Each cell 44 to 47 can be connected with a gas inlet 66 to 69 .
  • the original Berg model contains no mechanism for calculating the target voltage. This is seen as being constant at constant power.
  • the secondary electron yield of the target material was introduced as a function of the oxidations state, whereby the target voltage can be calculated as a function of the power and other process parameters.
  • FIG. 3 is depicted a more detailed illustration of the virtual regulation circuit for the stabilization of the coating rate as well as of the connected control for the case without in situ process regulation.
  • a tabulated or parametrized compensation function 70 is integrated, which depends on the position of the glass substrate 5 , the glass position being read out across the control line 36 .
  • the sputter process in the sputter installation 1 is modeled as a function of the substrate position. In the embodiment example this takes place either through a variable gas flow, which is transferred across the control lines 29 , 30 or via a variable discharge characteristic, which is transferred as total power, current or voltage across lines 33 , 34 .
  • the dynamic model 40 of the sputter process of the sputter installation 1 is compiled and this model is connected to a virtual regulation element 72 within a virtual regulation circuit 71 .
  • the regulation element 72 receives the modeled mean dynamic coating rate 73 on the substrate as the regulated variable as well as an installation parameter 74 , such as for example gas flow or discharge power, as the correcting variable.
  • the virtual regulation element 72 effects first a mean coating rate 73 , uniform in time, in the simulation.
  • the time course of the correcting variable 74 can be used as correction function 70 for the real model, such that the real coating on the substrate 5 also receives a uniform layer thickness profile.
  • FIG. 4 depicts a more detailed illustration of a virtual regulation circuit for the stabilization of the coating rate as well as the connected control for the case of an in situ process regulation.
  • the real sputter installation 1 be equipped with a regulator 76 , with which the partial pressure of the reactive gas, measured by means of pressure sensor 37 and transferred across the control line 27 , is kept constant.
  • the correcting variable serves here either the discharge power, transferred across the lines 33 , 34 , or the inert or reactive gas flow, transferred across the lines 29 , 30 .
  • stabilizations of the operating point are always required if the operating point lies in the so-called unstable transition range of a sputter process characteristic.
  • a correction function 70 for minimizing layer thickness fluctuations are applied, instead of on installation parameters, on the operating point 77 of the regulator 76 .
  • the substrate position x is here, again, read in from the control across line 36 .
  • a double, virtual regulation circuit 78 is built: to the simulation model 40 of the sputter installation a virtual regulation element 79 for in situ process stabilization is connected.
  • the virtual regulation element 79 ideally incorporates the same regulation algorithm as the real regulation element 76 .
  • the simulated reactive gas partial pressure 81 is regulated to the nominal value 82 from a virtual pressure sensor by variation of a process parameter 64 , for example discharge power or gas flow.
  • the nominal value 82 is now regulated by means of a further regulation element 83 such that the mean dynamic coating rate 73 on the substrate is stabilized to a nominal value 75 .
  • the correcting variable of the regulator 83 corresponds to the nominal value 82 of regulator 79 .
  • the time course of the correcting variable after the simulation is again transmitted as tabulated correction function 70 into the control 28 of the real installation.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)
US10/996,812 2004-04-26 2004-11-24 Method for coating substrates in inline installations Abandoned US20050236276A1 (en)

Applications Claiming Priority (2)

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DE102004020466.7 2004-04-26
DE102004020466A DE102004020466A1 (de) 2004-04-26 2004-04-26 Verfahren zum Beschichten von Substraten in Inline-Anlagen

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US (1) US20050236276A1 (de)
EP (1) EP1591557B1 (de)
JP (1) JP2005314795A (de)
KR (1) KR100789483B1 (de)
CN (1) CN1690247A (de)
AT (1) ATE392494T1 (de)
DE (2) DE102004020466A1 (de)
ES (1) ES2305639T3 (de)
PL (1) PL1591557T3 (de)
PT (1) PT1591557E (de)
TW (1) TWI265204B (de)

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US20070227882A1 (en) * 2006-03-29 2007-10-04 Roland Trassl Sputter chamber for coating a substrate
US20100282598A1 (en) * 2006-06-20 2010-11-11 Fraunhofer-Gesellschaft Zur Foerderung Der Angewan Dten Forschung E.V. Method for controlling a reactive-high-power pulsed magnetron sputter process and corresponding device
US20130181139A1 (en) * 2012-01-12 2013-07-18 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
FR3120125A1 (fr) 2021-02-25 2022-08-26 Saint-Gobain Glass France Dispositif de mesure de pression vide secondaire et système embarqué pour mesure de pression de vide résiduel
CN115406489A (zh) * 2022-11-01 2022-11-29 山东申华光学科技有限公司 一种镀膜机镀膜的监测预警方法及系统

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DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
JP5813920B2 (ja) * 2007-03-02 2015-11-17 テル・ソーラー・アクチェンゲゼルシャフトＴｅｌ Ｓｏｌａｒ Ａｇ 基板上に薄膜を蒸着する方法および基板のインライン真空処理のための装置
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
CN102492934B (zh) * 2011-12-26 2016-05-11 常州二维碳素科技股份有限公司 一种制备石墨烯薄膜的装置、方法及所得石墨烯薄膜
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DE102013107167B4 (de) 2013-07-08 2017-10-05 Von Ardenne Gmbh Anordnung zum Schutz von Einbauten in Vakuumkammern
JP5970583B2 (ja) * 2015-04-23 2016-08-17 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
DE102015117753A1 (de) * 2015-10-19 2017-04-20 Von Ardenne Gmbh Vakuumschleusenanordnung, Vakuumanordnung und Verfahren
CN110438463A (zh) * 2019-07-29 2019-11-12 光驰科技(上海)有限公司 一种解决镀膜产品横向均匀性的方法及其镀膜装置
CN110819963B (zh) * 2019-12-16 2022-05-17 凯盛光伏材料有限公司 一种提高薄膜太阳能电池薄膜均匀性的方法

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DE102004020466A1 (de) 2005-11-17
DE502004006837D1 (de) 2008-05-29
TW200535269A (en) 2005-11-01
EP1591557A1 (de) 2005-11-02
CN1690247A (zh) 2005-11-02
JP2005314795A (ja) 2005-11-10
PT1591557E (pt) 2008-07-25
ATE392494T1 (de) 2008-05-15
KR100789483B1 (ko) 2007-12-31
PL1591557T3 (pl) 2008-10-31

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