US20050194099A1 - Inductively coupled plasma source using induced eddy currents - Google Patents

Inductively coupled plasma source using induced eddy currents Download PDF

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Publication number
US20050194099A1
US20050194099A1 US10/792,462 US79246204A US2005194099A1 US 20050194099 A1 US20050194099 A1 US 20050194099A1 US 79246204 A US79246204 A US 79246204A US 2005194099 A1 US2005194099 A1 US 2005194099A1
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United States
Prior art keywords
plasma
conductive
chamber
current carrier
conductive body
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Abandoned
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US10/792,462
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English (en)
Inventor
Russell Jewett
Richard Scholl
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Advanced Energy Industries Inc
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Advanced Energy Industries Inc
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Priority to US10/792,462 priority Critical patent/US20050194099A1/en
Assigned to ADVANCED ENERGY INDUSTRIES, INC. reassignment ADVANCED ENERGY INDUSTRIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JEWETT, RUSSELL F., JR., SCHOLL, RICHARD A.
Priority to PCT/US2005/006848 priority patent/WO2005084930A1/fr
Priority to TW094106247A priority patent/TW200531601A/zh
Publication of US20050194099A1 publication Critical patent/US20050194099A1/en
Priority to US13/743,807 priority patent/US9005363B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Definitions

  • This invention relates generally to plasma processing sources, and more particularly to apparatus and methods for inductively coupled plasma processing.
  • Inductively coupled plasma sources in a variety of configurations are employed in a broad range of industrial applications. Inductively coupled plasma processing chambers are used abundantly for modifying the surface properties of materials, as for example in the manufacture of modern integrated circuits. Inductively coupled plasma sources may also operate as remote sources of activated gas species for downstream processing operations, or as abatement devices for treatment of toxic or environmentally harmful materials.
  • radio frequency (RF) power is coupled from inductive coils into a plasma contained within a dielectric enclosure.
  • the source may comprise a cylindrical dielectric discharge tube wrapped by an inductive source coil.
  • the source When energized by an RF power generator, the source operates like an air core transformer with the inductive coil as the primary circuit and the plasma within the tube as the secondary circuit.
  • induction coils may be disposed in a planar or conformal helix configuration adjacent to a dielectric discharge chamber for coupling of RF power into a plasma contained within the chamber.
  • dielectric chamber materials to separate induction coils from the plasma discharge body can significantly limit the scale and operational range of an inductively coupled plasma source.
  • Structural dielectric materials such as quartz or sapphire, typically suffer from mechanical and thermal constraints when used in high power density and chemically reactive applications.
  • the need to extract and dissipate thermal energy transferred from the plasma to the chamber walls is also more challenging when the chamber is constructed of dielectric materials. Cooling mechanisms such as forced air or circulating fluids are not only complicated and expensive to implement, but also typically result in reduced coupling efficiency of power to the plasma.
  • Faraday shielding can be employed to decrease the capacitive coupling between the source coils and the plasma, thereby reducing ion sputtering of the chamber walls.
  • a Faraday shield or cage employed for this purpose is typically designed so as to suppress or minimize eddy currents within the shield.
  • RF power is coupled from inductive coils through a high permeability core material to a ring discharge plasma.
  • the source operates as a magnetic core transformer with the ring plasma acting as a single-turn secondary circuit.
  • the ring plasma discharge may be confined within a chamber of closed-path topology, such as a torus, as described for example in U.S. Pat. Nos. 3,500,118 and 4,431,898.
  • the discharge chamber may be comprised of a dielectric material to ensure that currents are coupled into the plasma rather than within the body of the chamber itself.
  • the chamber may, however, be comprised substantially of a conductive material provided that at least one insulating gap or break is provided along the major circumference of the torus to prevent the chamber itself from acting as a short-circuited turn, as described for example in U.S. Pat. No. 3,109,801.
  • a nearly all-metal chamber which may be fluid cooled
  • issues of thermal management are simplified.
  • magnetic core inductively coupled plasma sources are useful for generating charged particles and chemically active species at relatively high densities and power levels.
  • a topologically toroidal plasma source is a complex apparatus, however, that does not lend itself to simple design and manufacturing for commercial applications.
  • the performance a toroidal source is limited by the quality, expense, and ability to cool the high permeability ferrite materials that must typically be employed for operation with RF power sources in medium to high frequency ranges.
  • an inductively coupled plasma source having a relatively simple configuration, such as a discharge tube, but without the attendant disadvantages of a plasma tube or chamber constructed substantially of dielectric materials. It would be further desirable if the plasma source were not dependent for its operation upon expensive ferrite transformer materials.
  • the invention provides methods and apparatus for creating an inductively coupled plasma using induced eddy currents.
  • the invention generally comprises a body constructed substantially of a conductive material interrupted by at least one dielectric break. Alternating current power is inductively coupled from a current carrier, such as an induction coil, into the conductive body.
  • a current carrier such as an induction coil
  • the dielectric gap or gaps in the conductive body are disposed so as to cause eddy currents to circulate about portions of the conductive body and thereby couple RF power into an adjacent plasma.
  • a plasma chamber comprises conductive segments aligned longitudinally to form a hollow tube, and separated by dielectric breaks or gaps.
  • An induction coil is disposed coaxially about the outer perimeter of the chamber formed of the conductive segments.
  • a power supply provides alternating current to the induction coil, which creates alternating magnetic fields in the space occupied by the chamber. Because of the dielectric separation between the conductive chamber segments, the alternating magnetic fields induce eddy currents that circulate radially along the surfaces of the individual segments, which are thick relative to the surface current skin depth. Net alternating currents are thereby induced along the interior conductive surfaces of the discharge tube. These net currents in turn couple power into a plasma contained within the hollow interior portion of the chamber.
  • an inductively coupled plasma source may be constructed in the form of a simple linear or solenoidal discharge tube, but wherein the tube is composed almost entirely of a conductive material such as a metal.
  • the use of a nearly all-metal plasma chamber can have many advantages, including simplified manufacturability and thermal management.
  • a plasma chamber that is substantially conductive also largely avoids the problem of ion bombardment of the chamber walls by reducing or eliminating capacitive coupling between the induction coils and the plasma.
  • an inductively coupled plasma source of the invention has enhanced performance and durability compared to sources that rely substantially upon structural dielectric materials for confinement of the plasma.
  • conductive chamber segments are separated by air gaps.
  • a dielectric window material may also be provided between chamber segments in order to maintain vacuum integrity or to confine the plasma.
  • the conductive chamber segments are constructed so that adjoining surfaces of the segments mate flush with each other.
  • An insulating coating or treatment such as an anodization layer, is applied to the adjoining surfaces.
  • a dielectric adhesive or filler is disposed between the adjoining surfaces of the conductive segments.
  • the dielectric breaks between segments may extend along the entire length of the chamber.
  • the chamber may also be formed by joining the segments at their longitudinal ends using caps or rings of dielectric material.
  • the conductive segments may be joined at their longitudinal ends with a conductive material.
  • Conductive chamber segments may be configured to form a plasma chamber having any cross-sectional shape, including circular or rectangular. Conductive segments may also be disposed in other configurations in accordance with the present invention so as to couple RF energy into a plasma by means of eddy currents induced within the segments.
  • a planar fixture comprised of radially disposed conductive segments separated by dielectric gaps is provided between a helical induction coil and a plasma.
  • radially disposed conductive segments form a conformal dome between an induction coil and a plasma.
  • plasma chambers of the invention are suitable for use in numerous plasma processing applications including inline abatement, dissociation, or processing of working gases; remote production of activated gases for downstream processing; plasma modification of surface properties of a workpiece; glass cleaning, etching, or coating; physical or chemical vapor deposition of materials upon a process substrate; etching, coating, stripping or ashing of a substrate surface, as in production of integrated circuit wafers or memory disks; and the like.
  • FIG. 1 illustrates an inductively coupled plasma source in accordance with one embodiment of the invention.
  • FIG. 2 is an orthographic view of the plasma discharge tube of the embodiment depicted in FIG. 1 .
  • FIG. 3 is a cross-sectional view of the plasma discharge tube of the embodiment depicted in FIG. 1 .
  • FIGS. 4 a , 4 b , and 4 c illustrate the plasma discharge tube of a further embodiment of the invention.
  • FIG. 5 illustrates an inductively coupled plasma source adapted for use in a chemical vapor deposition (CVD) application in accordance with a further embodiment of the invention.
  • CVD chemical vapor deposition
  • FIGS. 6 a and 6 b illustrate inductively coupled plasma chambers in accordance with further embodiments of the invention.
  • FIG. 7 illustrates an inductively coupled plasma source having an external plasma discharge in accordance with another embodiment of the invention.
  • FIG. 8 illustrates an alternative embodiment of the invention having an external plasma discharge.
  • FIG. 1 illustrates an inductively coupled plasma source 10 in accordance with one embodiment of the invention.
  • An RF power source 12 furnishes alternating current to induction coils 14 disposed coaxially about a substantially metallic plasma discharge tube 16 containing a plasma within.
  • plasma discharge tube 16 is configured as a hollow cylinder open at both ends 18 to allow for gas inlet and exhaust, as for example in an inline gas processing application.
  • the plasma tube may be configured as a sealed vacuum chamber having metered inlet and exhaust ports for feed and processing gases.
  • the apparatus may also comprise impedance matching elements or circuitry disposed between RF power source 12 and induction coils 14 , as well as measurement and feedback circuitry to regulate operation of the device.
  • other features that may typically be included in a plasma processing system such as vacuum pumping manifolds, gas delivery connections or manifolds, fluid cooling apparatus, plasma ignition electrodes or other devices, and mechanisms for workpiece mounting, transfer, or electrical biasing.
  • FIGS. 2 and 3 represent orthographic and cross-sectional views, respectively, of the plasma discharge tube 16 of FIG. 1 .
  • plasma discharge tube 16 is formed of a metal cylinder having longitudinal grooves 22 through the body of the cylinder.
  • a gastight dielectric seal comprising gas seal 24 and dielectric cover 26 is disposed across each groove 22 in order to preserve the gas confinement integrity of the discharge tube 16 .
  • the longitudinal grooves 22 thus divide the walls of plasma discharge tube 16 into longitudinally aligned conductive segments 28 interrupted by dielectric breaks.
  • Alternating current 32 applied to induction coils 14 causes time-varying magnetic fields to develop in the space occupied by the chamber 16 .
  • Conductive chamber segments 28 are of a thickness that is greater than the skin depth as determined by the material properties of the segments 28 and the operating frequency of the RF power source 12 .
  • Eddy currents 34 thus develop that circulate radially along the surfaces of each conductive chamber segment 28 .
  • a virtual current loop 36 is established along the interior conductive surfaces of the chamber 16 .
  • the virtual current loop 36 further creates time-varying magnetic fields in the interior plasma containment portion of chamber 16 , inducing currents within and thereby coupling power into the plasma 50 .
  • the chamber may be comprised of any number of conductive segments 28 separated by dielectric gaps, provided that the resulting segments are of sufficiently substantial dimension to carry the required eddy currents and create the virtual current loop 36 .
  • the conductive segments 28 may be comprised of a common structural metal such as aluminum or stainless steel, or any other conductive material suitable to the thermal and chemical environments of a particular plasma processing application.
  • each conductive segment 28 is also sufficiently substantial to have embedded within it one or more cooling channels 40 through which cooling fluids may circulate, while retaining such structural properties as may be required of the segment.
  • Fittings 42 may be provided for connection of the cooling channels 40 to a source of chilled water or other cooling fluid (not shown) for thermal management of the plasma source apparatus.
  • Dielectric gaps 22 need only be of sufficient width and dielectric strength to resist the peak-to-peak breakdown voltages that develop across conductive segments 28 upon application of RF power to the induction coils 14 .
  • the dielectric gaps 22 do not extend the entire length of the discharge tube 16 .
  • a leakage current path exists that reduces the power coupled from the induction coils into the plasma. This power loss may be minimized to an acceptable level by making the discharge tube 16 substantially greater in overall length than the region occupied by induction coils 14 , thus making the path of the leakage current substantially longer than that of the eddy currents that couple power into the plasma.
  • the leakage current may be reduced or eliminated by forming one or more of the dielectric gaps of a structural insulating material that extends the length of the chamber, or by joining conductive segments at their longitudinal ends using caps or rings of a structural dielectric material.
  • FIGS. 4 a , 4 b , and 4 c illustrate a plasma discharge tube in accordance with another embodiment of the invention.
  • Conductive discharge tube segments 128 comprise mating surfaces 122 treated with an electrically insulating layer 124 .
  • the insulating layers 124 may be provided by anodization or similar treatment of the conductive surface, or by application of a dielectric coating material such as an epoxy adhesive.
  • conductive segments 128 assemble to form a hollow cylindrical discharge tube 120 having embedded longitudinal dielectric interruptions 126 and cooling channels 140 .
  • Mating surfaces 122 may be made optically flat so that additional gas sealing between segments 128 is not required. Alternatively, gas sealing may be accomplished through use of a dielectric filler or adhesive between segments, such a high temperature epoxy resin or refractory ceramic paste.
  • induced eddy currents 134 develop within conductive chamber segments 128 and create virtual current loop 136 .
  • the virtual current loop 136 induces currents within a plasma 150 contained within the hollow portion of discharge chamber 120 .
  • FIG. 5 illustrates an embodiment of the invention adapted for use in a chemical vapor deposition (CVD) application.
  • Plasma chamber 516 is a conductive hollow body having one or more feed gas inlets 530 at one end 518 of the body and a substantially open discharge region at opposing end 520 . Also provided near the discharge end of plasma chamber are ports 532 for one or more precursor gases 534 to be injected into the process zone.
  • the cross-sectional aspect ratio of plasma chamber 516 is optimized for dispersal of CVD reaction precursors in the vicinity of a translating workpiece 536 .
  • a plurality of longitudinal grooves 522 is provided through the conductive body of plasma chamber 516 , creating a series of longitudinally aligned conductive segments 528 separated by dielectric breaks. If needed, dielectric covers and gas seals may be provided across the grooves 522 .
  • Disposed about the chamber body are induction coils 514 oriented transversely to the conductive segments 528 . When energized by RF current, the induction coils induce eddy currents in the conductive segments, which in turn couple RF power into a plasma 550 contained within the hollow plasma chamber 516 .
  • the plasma source of this embodiment may be used to generate a plasma from an oxygen feed gas injected at first gas inlets 530 .
  • a silane or other silicon-bearing precursor is injected into the plasma 550 at second inlets 532 where it dissociates and reacts to form a Si X O Y compound, such as SiO 2 , which is deposited as a solid film upon the translating substrate 536 .
  • an inductively coupled plasma is generated by inducing eddy currents in conductive bodies that form only a portion of a plasma confinement chamber, or that are ancillary to the chamber.
  • plasma processing chamber 602 is an enclosed cylinder containing a workpiece (not shown).
  • a conductive disk 604 Disposed atop processing chamber 602 is a conductive disk 604 having a plurality of radial grooves 606 , creating an array of radially disposed conductive segments 608 .
  • Adjacent to conductive disk 604 are helical induction coils 610 .
  • the induction coils 610 When energized by RF current, the induction coils 610 induce eddy currents in the conductive segments 608 , which in turn couple RF power into a plasma contained within processing chamber 602 and that acts upon the workpiece.
  • the same principle is illustrated in the embodiment of FIG. 6 b , wherein radially disposed conductive segments form a conformal dome between a helical induction coil and a plasma.
  • FIG. 7 illustrates an embodiment of the invention that generates an external inductively coupled plasma.
  • a substantially conductive body is a hollow cylindrical tube that comprises longitudinally aligned conductive segments 728 interrupted by dielectric breaks 722 .
  • induction coils 714 wound transversely to the conductive segments 728 .
  • a flux concentrating magnetic material such as a ferrite core may be disposed within induction coils 714 to enhance magnetic fields generated by the coils.
  • induction coils 714 When energized by RF current, induction coils 714 induce eddy currents 734 in the conductive segments and create virtual current loop 736 external to the cylindrical tube.
  • the virtual current loop 736 induces currents within a coaxial plasma 750 external to the cylindrical tube.
  • Plasma 750 may be provided as an exposed external discharge, or alternatively may be confined within an outer coaxial enclosure (not shown). If a confined plasma is to be subatmospheric, gastight dielectric windows 724 may also be added to seal dielectric breaks 722 .
  • FIG. 8 An alternative embodiment of the invention that generates an external inductively coupled plasma is illustrated in FIG. 8 .
  • Conductive body 820 is disposed adjacent to a current carrier 814 .
  • conductive body 820 is formed so as to have a conductive portion 828 that surrounds a hollow cavity with a wall that is interrupted by a dielectric air gap 822 .
  • current carrier 814 is energized by RF current
  • eddy currents 834 are induced in conductive portion 828 and create virtual current loop 836 .
  • the virtual current loop 836 induces currents within a plasma 850 in the hollow interior cavity of conductive body 820 . Due to the position of air gap 822 , however, the plasma 850 is not confined within conductive body 820 but may appear as an external discharge.
  • conductive body 820 is disposed as a body of revolution about current carrier 814 , resulting in coaxial ring plasma discharge 850 .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
US10/792,462 2004-03-03 2004-03-03 Inductively coupled plasma source using induced eddy currents Abandoned US20050194099A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/792,462 US20050194099A1 (en) 2004-03-03 2004-03-03 Inductively coupled plasma source using induced eddy currents
PCT/US2005/006848 WO2005084930A1 (fr) 2004-03-03 2005-03-02 Source de plasma couplee de maniere inductive au moyen de courants de foucault induits
TW094106247A TW200531601A (en) 2004-03-03 2005-03-02 Inductively coupled plasma source using induced eddy currents
US13/743,807 US9005363B2 (en) 2004-03-03 2013-01-17 Crystalline film devices, apparatuses for and methods of fabrication

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US20070085483A1 (en) * 2005-10-14 2007-04-19 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
WO2008137433A1 (fr) * 2007-05-03 2008-11-13 Sencera International Corporation Dispositifs à film cristallin, leurs appareils et procédés de fabrication
US20090017601A1 (en) * 2007-05-03 2009-01-15 Jewett Russell F Crystalline film devices, apparatuses for and methods of fabrication
US20110272592A1 (en) * 2009-12-30 2011-11-10 Fei Company Encapsulation of Electrodes in Solid Media for use in conjunction with Fluid High Voltage Isolation
US20120261390A1 (en) * 2011-02-03 2012-10-18 Tekna Plasma Systems Inc High Performance Induction Plasma Torch
US20130171038A1 (en) * 2012-01-04 2013-07-04 Dae-Kyu Choi Magnetic flux channel coupled plasma reactor
US20130264886A1 (en) * 2012-04-06 2013-10-10 Hitachi Cable, Ltd. Non-contact power supply system
WO2016149515A1 (fr) * 2015-03-19 2016-09-22 Mattson Technology, Inc. Commande de l'uniformité azimutale d'un processus de gravure dans une chambre de traitement au plasma
US20160358793A1 (en) * 2015-06-02 2016-12-08 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and method, and method of manufacturing electronic device
WO2017070094A1 (fr) * 2015-10-23 2017-04-27 University Of Washington Systèmes de confinement de plasma et procédés d'utilisation
US20170200591A1 (en) * 2016-01-13 2017-07-13 Mks Instruments, Inc. Method and Apparatus for Deposition Cleaning in a Pumping Line
JP2018523258A (ja) * 2015-05-12 2018-08-16 ティーエーイー テクノロジーズ， インコーポレイテッド 不所望の渦電流を低減するシステムおよび方法
US10187966B2 (en) 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
WO2020023784A1 (fr) * 2018-07-25 2020-01-30 Lam Research Corporation Blindage magnétique pour sources de plasma
TWI710722B (zh) * 2016-01-13 2020-11-21 美商Ｍｋｓ儀器公司 用於在一泵送線中清潔沈積物之方法及設備
US11511316B2 (en) * 2010-11-04 2022-11-29 Nissan Chemical Industries, Ltd. Plasma annealing method and device for the same
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber

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