US20050134507A1 - Ceramic embedded wireless antenna - Google Patents
Ceramic embedded wireless antenna Download PDFInfo
- Publication number
- US20050134507A1 US20050134507A1 US10/746,462 US74646203A US2005134507A1 US 20050134507 A1 US20050134507 A1 US 20050134507A1 US 74646203 A US74646203 A US 74646203A US 2005134507 A1 US2005134507 A1 US 2005134507A1
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- United States
- Prior art keywords
- antenna
- unfired
- ceramic material
- ceramic layer
- titanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 53
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004377 microelectronic Methods 0.000 claims description 49
- 230000017525 heat dissipation Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 7
- ZFXVRMSLJDYJCH-UHFFFAOYSA-N calcium magnesium Chemical compound [Mg].[Ca] ZFXVRMSLJDYJCH-UHFFFAOYSA-N 0.000 claims description 7
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052839 forsterite Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 3
- 241001133184 Colletotrichum agaves Species 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims 7
- 230000008054 signal transmission Effects 0.000 abstract description 5
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- 239000010410 layer Substances 0.000 description 11
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- 239000002184 metal Substances 0.000 description 5
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- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
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- 229910052802 copper Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
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- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
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- 229910001128 Sn alloy Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Images
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Definitions
- the present invention relates to wireless antennae and method of fabricating the same.
- the present invention relates to forming antennae embedded in ceramic materials, such as low temperature co-fired ceramic (LTCC) materials.
- LTCC low temperature co-fired ceramic
- Radios to broadcast and receive signals, which, of course, bypasses the signal lines and results in simultaneous receipt and transmission of signals between microelectronic devices.
- These radios are naturally very small. This minute size results in the antennae of these radios being particularly susceptible to expansion and contraction due to the relatively high coefficients of thermal expansion (“CTE”) of the materials within a microelectronic package in which the antennae are embedded or to which the antennae are attached. This expansion and contraction may cause the signal transmission and/or receipt frequency to change, which can affect proper signal transmission and/or receipt, as will be understood by those skilled in the art.
- CTE coefficients of thermal expansion
- FIG. 1 is a side cross-sectional view of a microelectronic device assembly, according to the present invention
- FIG. 2 is a top plan view of the microelectronic device assembly along lines 2 - 2 of FIG. 1 , according to the present invention
- FIG. 3 is a side cross-sectional view of another microelectronic device assembly, according to the present invention.
- FIG. 4 is a side cross-sectional view of yet another microelectronic device assembly, according to the present invention.
- FIG. 5 is a side cross-sectional view of still another microelectronic device assembly, according to the present invention.
- FIGS. 6-9 illustrate a method of fabricating a ceramic embedded antenna, according to the present invention.
- FIGS. 10-13 illustrate a method of fabricating an antenna containing heat dissipation device, according to the present invention
- FIGS. 14 and 15 illustrate a method of fabricating another antenna containing heat dissipation device, according to the present invention
- FIG. 16 is an oblique view of a hand-held device having a microelectronic assembly of the present integrated therein, according to the present invention.
- FIG. 17 is an oblique view of a computer system having a microelectronic assembly of the present integrated therein, according to the present invention.
- antenna assemblies disclosed herein may be used in many apparatuses, such as in the transmitters and receivers of a radio system, and may go beyond chip-to-chip communication to include chip-to-chip wireless communication systems which interconnect wireless local area networks (WLAN) devices and wireless wide area network (WWAN) devices including wireless network interface devices and network interface cards (NICs), base stations, access points (APs), gateways, bridges, hubs, cellular radiotelephone communication systems, satellite communication systems, two-way radio communication systems, one-way pagers, two-way pagers, personal communication systems (PCS), personal computers (PCs), personal digital assistants (PDAs), and the like, although the scope of the invention is not limited in this respect.
- WLAN wireless local area networks
- WWAN wireless wide area network
- NICs network interface cards
- APs access points
- gateways gateways
- bridges bridges
- hubs hubs
- cellular radiotelephone communication systems satellite communication systems, two-way radio communication systems, one-way pagers, two-way pager
- FIG. 1 illustrates a microelectronic device assembly 100 comprising a microelectronic die 102 (illustrated as a flip chip) physically and electrically attached to a first surface 106 of a substrate 104 (such as an interposer, a motherboard, or the like) by a plurality of conductive bumps 108 , such as solder balls, conductive particle filled polymers, and the like, extending between pads 112 on an active surface 114 of the microelectronic die 102 and lands 116 on the substrate first surface 106 .
- an underfill material 118 such as an epoxy material, is disposed therebetween.
- the microelectronic die 102 may include, but is not limited to central processing units (CPUs), chipsets, memory devices, ASICs, and the like. It is, of course, understood that the external interconnects (not shown) may be disposed on a second surface 110 of the substrate 104 , which opposes the substrate first surface 106 , for connection with external substates and devices (not shown).
- CPUs central processing units
- ASICs application specific integrated circuits
- a heat dissipation device 122 is placed in thermal contact by a first surface 124 thereof with a back surface 126 of the microelectronic die 102 .
- a thermal interface material 128 may be disposed between the heat dissipation device first surface 124 and the microelectronic die back surface 126 to improve thermal conductivity therebetween.
- the thermal interface material 128 should have high thermal conductivity and may include, but is not limited to, thermal grease, phase-change material, metal filled polymer matrix, solder (alloys of lead, tin, indium, silver, copper, and the like), and other such materials known in the art.
- the heat dissipation device 122 may further include at least one stand-off 132 , wherein the heat dissipation device 122 may be attached to the substrate first surface 106 by an adhesive layer 136 (generally a non-conductive polymer) between the substrate first surface 106 and the stand-off 132 , which provides mechanical strength to the microelectronic device assembly 100 .
- an adhesive layer 136 generally a non-conductive polymer
- the heat dissipation device 122 would be constructed from a thermally conductive metal, such as copper, copper alloys, aluminum, aluminum alloys, and the like.
- the heat dissipation device 122 is formed from a thermally conductive ceramic material.
- An antenna 142 may be embedded in the ceramic heat dissipation device 122 proximate to a second surface 144 thereof with a conductive via 146 extending from the antenna 142 to the heat dissipation device first surface 124 .
- the conductive via 146 is connected to a conductive pillar 148 extending from the conductive via 146 to an antenna signal trace 152 proximate the substrate first surface 106 to at least one conductive bump 108 .
- the antenna 142 is in electrical communication with the microelectronic die 102 .
- the antenna 142 and conductive via 146 may be made of any applicable electrically conductive material including but not limited to silver, gold, copper, aluminum, and the like.
- the antenna 142 may be fabricated to be disposed on the heat dissipation device first surface 124 , thereby eliminating the need the conductive via 146 , as shown in FIG. 3 .
- the conductive pillar 148 may be attached by any means known in the art, including but not limited to the application of solder paste followed by solder reflow.
- the ceramic materials used to fabricate the antenna-containing ceramic heat dissipation device 122 preferably, after firing, achieves a dense, non-porous microstructure below about 950° C. such that it can be co-fired with low resistance conductive materials such as gold, copper, and silver, commonly known as low temperature co-fired ceramic (LTCC) materials.
- These ceramic materials may include, but are not limited to calcium titanate, magnesium titanate, barium titanate, forsterite, magnesium calcium titanate, 951 Green TapeTM, available from DuPont Corporation, Wilmington, Del., USA, and the like.
- the ceramic materials (after being fired) preferably have a low CTE, which is about that of silicon or gallium arsenide.
- a low CTE which is about that of silicon or gallium arsenide.
- the thermal properties of the antenna-containing ceramic heat dissipation device 122 can enhanced by forming thermal vias 156 through the antenna-containing ceramic heat dissipation device 122 from the heat dissipation device first surface 124 and the heat dissipation device second surface 144 proximate the microelectronic die 102 , as shown in FIGS. 1 and 2 (wherein dashed line 158 shows the position of microelectronic die 102 in FIG. 2 ).
- the thermal vias 156 can be, but is not limited to, metal plugs, heat pipes, and the like.
- the antenna-containing ceramic heat dissipation device 122 may include, high surface area (e.g., finned) structures, and may include a heat pipe, thermoelectric coolers, and cold plates (refrigeration or liquid cooled) attached to the heat dissipation device second surface 144 .
- high surface area e.g., finned
- thermoelectric coolers thermoelectric coolers
- cold plates cold plates
- the antenna 142 need not be embedded in a heat dissipation device 122 .
- the antenna 142 may be itself embedded alone in a ceramic material 162 in its own antenna package 160 , as shown in FIGS. 4 and 5 .
- the antenna package 160 may be attached to the substrate 104 either with the antenna 142 facing the substrate first surface 106 and be attached directly to the antenna signal trace 152 , as shown in FIG. 4 , or may be attached with the antenna 142 opposing the substrate first surface 106 , which includes the conductive via 146 that is attached directly to the antenna signal trace 152 , as shown in FIG. 5 .
- FIGS. 6-9 illustrate one embodiment of a method of fabrication of an antenna package of the present invention.
- a green (unfired) ceramic layer such as the 951 Green TapeTM with a 5 mil thickness
- a green (unfired) ceramic layer such as the 951 Green TapeTM with a 5 mil thickness
- the initial lay-up 210 may have a conductive via opening 208 extending therethrough.
- the conductive via opening 208 may be formed, by any known method, after layering the individual green ceramic layer, or may be preformed in each individual green ceramic layer and aligned during layering, as will be understood to those skilled in the art.
- a conductive material 212 may be dispensed within the conductive via opening 208 , and an antenna 214 is disposed on the initial lay-up 210 to form an intermediate lay-up 220 .
- the conductive material 212 may include, but is not limited to, metal and metal-filled polymers, and may include 6141 Ag Via Fill Conductor, available from DuPont Corporation, Wilmington, Del., USA.
- the antenna 214 may be a preformed structure placed on the initial lay-up 210 , a conductive paste disposed on the initial lay-up 210 , a structure formed by patterning and deposition on the initial lay-up 210 , or the like, as will be understood to those skill in the art. As shown in FIG.
- the initial lay-up 210 and intermediate lay-up 220 may be formed in a cast 222 , or the intermediate lay-up 220 may be placed in the cast 222 .
- an unfired, powdered ceramic 224 such as calcium titanate, magnesium titanate, barium titanate, forsterite, magnesium calcium titanate, powdered 951 Green TapeTM, available from DuPont Corporation, Wilmington, Del., USA, and the like, is dispensed on the intermediate lay-up 220 , preferably to a level substantially even with an upper surface 226 of the antenna 214 , such that the antenna upper surface 226 is not covered with the unfired, powdered ceramic 224 , to form the final lay-up 230 .
- the final lay-up 230 is then fired at a temperature of about 850° C. to form a substantially contiguous ceramic structure 232 binding all but the antenna upper surface 226 and to form a conductive via 234 from the conductive material 212 (see FIG. 7 ).
- an antenna package 240 similar to the antenna package 160 of FIG. 5 , is formed.
- An antenna package similar to the antenna package 160 of FIG. 4 , is fabricated in the same manner as described in FIGS. 6-9 with the exception that no conductive via opening 208 or formation of the conductive via 234 is necessary.
- FIGS. 10-14 illustrates one embodiment of a method of fabrication of an antenna-containing heat dissipation device of the present invention.
- a green (unfired) ceramic layer such as the 951 Green TapeTM with a 5 mil thickness
- the initial lay-up 310 may have a conductive via opening 308 and a plurality of thermal via openings 312 extending therethrough.
- the conductive via opening 308 and the thermal via openings 312 may be formed after layering the individual green ceramic tape layer, or may be preformed in each individual green ceramic tape layer and aligned during layering, as will be understood to those skilled in the art.
- Pre-shaped green ceramic tape layers 314 are layered horizontally (shown) or vertically to form stand-offs 316 .
- a conductive material 322 such as 6141 Ag Via Fill Conductor, available from DuPont Corporation, Wilmington, Del., USA, may be dispensed within the conductive via opening 308 and the thermal via openings 312 , and an antenna 324 is disposed on the initial lay-up 310 to form an intermediate lay-up 330 .
- the antenna 324 may be a preformed structure placed on the initial lay-up 310 , a conductive paste disposed on the initial lay-up 310 , a structure formed by patterning and deposition on the initial lay-up 310 , or the like, as will be understood to those skill in the art. As shown in FIG.
- the initial lay-up 310 and intermediate lay-up 330 may be formed in a cast 332 , or the intermediate lay-up 330 may be placed in the cast 332 .
- an unfired, powdered ceramic 334 is dispensed on the intermediate lay-up 330 , preferably to a level substantially even with an upper surface 336 of the antenna 324 , such that the antenna upper surface 336 is not covered with the unfired, powdered ceramic 334 , to form the final lay-up 340 .
- the final lay-up 340 is then fired at a temperature of about 850° C. to form a substantially contiguous ceramic structure 342 binding all but the antenna upper surface 336 and to form a conductive via 344 and thermal vias 346 from the conductive material 322 (see FIG. 7 ).
- an antenna-containing ceramic heat dissipation device 350 similar to the antenna-containing heat dissipation device 122 of FIG. 1 , is formed.
- an antenna-containing ceramic heat dissipation device 360 (see FIG. 15 ), similar to the antenna-containing ceramic heat dissipation device 122 of FIG. 3 , is fabricated in the same manner as described in FIGS. 6-9 with the exception that no conductive via opening 308 or formation of the conductive via 344 is necessary and different positioning of the antenna 324 and the stand-offs 316 . Additionally, if the stand-offs 316 completely surrounds the periphery of the heat dissipation device, no cast is needed to contain the powdered ceramic material 334 as it will be contained by the stand-offs 316 , as shown in FIG. 15 . The structure is then fired to form the antenna-containing ceramic heat dissipation device 360 , as shown in FIG. 16 .
- the packages formed by the present invention may be used in a hand-held device 410 , such as a cell phone or a personal data assistant (PDA), as shown in FIG. 16 .
- the hand-held device 410 may comprise an external substrate 420 with at least one of the microelectronic device assembly 100 of FIG. 1 or FIG. 2 and the assemblies of FIG. 4 or FIG. 5 collectively represented as element 430 attached thereto, within a housing 440 .
- the external substrate 420 may be attached to various peripheral devices including an input device, such as keypad 450 , and a display device, such an LCD display 460 .
- the microelectronic device assemblies formed by the present invention may also be used in a computer system 510 , as shown in FIG. 17 .
- the computer system 510 may comprise an external substrate or motherboard 520 with at least one of the microelectronic device assembly 100 of FIG. 1 or FIG. 2 and the assemblies of FIG. 4 or FIG. 5 collectively represented as element 530 attached thereto, within a housing or chassis 540 .
- the external substrate or motherboard 420 may be attached to various peripheral devices including inputs devices, such as a keyboard 550 and/or a mouse 560 , and a display device, such as a CRT monitor 570 .
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to wireless antennae and method of fabricating the same. In particular, the present invention relates to forming antennae embedded in ceramic materials, such as low temperature co-fired ceramic (LTCC) materials.
- 2. State of the Art
- Higher performance, lower cost, increased miniaturization of integrated circuit components, and greater packaging density of integrated circuits are ongoing goals of the microelectronic industry. Although these are the goals of the microelectronic industry, increasing the complexity and speed of a microelectronic die generally increases its size, as well as increasing the number of signals being delivered to and sent from the microelectronic die. This increase in the number of signals naturally requires an increase in the number of signals lines. The increase in signals lines results in increasingly complex routing through the substrate or interposer to which the microelectronic die is attached. The interposer in turn is attached to a primary substrate upon which other microelectronic devices are attached.
- With greater complexity of signal line routing, the proper timing of the transmission of information to and from the various microelectronic devices becomes more difficult, because the distances between the circuits become more varied. Naturally, this may adversely affect the performance of the microelectronic devices, as the varied distances may result in delays within the clock signal distribution. For optimal performance, common signals must reach each relevant microelectronic device substantially simultaneously and individual signals must be properly timed.
- One solution to such issues is the use of radios to broadcast and receive signals, which, of course, bypasses the signal lines and results in simultaneous receipt and transmission of signals between microelectronic devices. These radios are naturally very small. This minute size results in the antennae of these radios being particularly susceptible to expansion and contraction due to the relatively high coefficients of thermal expansion (“CTE”) of the materials within a microelectronic package in which the antennae are embedded or to which the antennae are attached. This expansion and contraction may cause the signal transmission and/or receipt frequency to change, which can affect proper signal transmission and/or receipt, as will be understood by those skilled in the art.
- Therefore, it would be advantageous to develop apparatus and techniques to effectively isolate on-device antennae from the affects of CTE within a microelectronic package.
- While the specification concludes with claims particularly pointing out and distinctly claiming that which is regarded as the present invention, the advantages of this invention can be more readily ascertained from the following description of the invention when read in conjunction with the accompanying drawings to which:
-
FIG. 1 is a side cross-sectional view of a microelectronic device assembly, according to the present invention; -
FIG. 2 is a top plan view of the microelectronic device assembly along lines 2-2 ofFIG. 1 , according to the present invention; -
FIG. 3 is a side cross-sectional view of another microelectronic device assembly, according to the present invention; -
FIG. 4 is a side cross-sectional view of yet another microelectronic device assembly, according to the present invention; -
FIG. 5 is a side cross-sectional view of still another microelectronic device assembly, according to the present invention; -
FIGS. 6-9 illustrate a method of fabricating a ceramic embedded antenna, according to the present invention; -
FIGS. 10-13 illustrate a method of fabricating an antenna containing heat dissipation device, according to the present invention; -
FIGS. 14 and 15 illustrate a method of fabricating another antenna containing heat dissipation device, according to the present invention; -
FIG. 16 is an oblique view of a hand-held device having a microelectronic assembly of the present integrated therein, according to the present invention; and -
FIG. 17 is an oblique view of a computer system having a microelectronic assembly of the present integrated therein, according to the present invention. - In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that the various embodiments of the invention, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein, in connection with one embodiment, may be implemented within other embodiments without departing from the spirit and scope of the invention. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the claims are entitled. In the drawings, like numerals refer to the same or similar functionality throughout the several views.
- It should be understood that embodiments of the present invention may be used in a variety of applications. Although the present invention is not limited in this respect, the antenna assemblies disclosed herein may be used in many apparatuses, such as in the transmitters and receivers of a radio system, and may go beyond chip-to-chip communication to include chip-to-chip wireless communication systems which interconnect wireless local area networks (WLAN) devices and wireless wide area network (WWAN) devices including wireless network interface devices and network interface cards (NICs), base stations, access points (APs), gateways, bridges, hubs, cellular radiotelephone communication systems, satellite communication systems, two-way radio communication systems, one-way pagers, two-way pagers, personal communication systems (PCS), personal computers (PCs), personal digital assistants (PDAs), and the like, although the scope of the invention is not limited in this respect.
-
FIG. 1 illustrates amicroelectronic device assembly 100 comprising a microelectronic die 102 (illustrated as a flip chip) physically and electrically attached to afirst surface 106 of a substrate 104 (such as an interposer, a motherboard, or the like) by a plurality ofconductive bumps 108, such as solder balls, conductive particle filled polymers, and the like, extending betweenpads 112 on anactive surface 114 of themicroelectronic die 102 andlands 116 on the substratefirst surface 106. To mechanically and physically reinforce theconductive bumps 108 connecting themicroelectronic die pads 112 and thesubstrate lands 116, anunderfill material 118, such as an epoxy material, is disposed therebetween. Themicroelectronic die 102 may include, but is not limited to central processing units (CPUs), chipsets, memory devices, ASICs, and the like. It is, of course, understood that the external interconnects (not shown) may be disposed on a second surface 110 of thesubstrate 104, which opposes the substratefirst surface 106, for connection with external substates and devices (not shown). - A
heat dissipation device 122 is placed in thermal contact by afirst surface 124 thereof with aback surface 126 of themicroelectronic die 102. Athermal interface material 128 may be disposed between the heat dissipation devicefirst surface 124 and the microelectronicdie back surface 126 to improve thermal conductivity therebetween. Thethermal interface material 128 should have high thermal conductivity and may include, but is not limited to, thermal grease, phase-change material, metal filled polymer matrix, solder (alloys of lead, tin, indium, silver, copper, and the like), and other such materials known in the art. - The
heat dissipation device 122 may further include at least one stand-off 132, wherein theheat dissipation device 122 may be attached to the substratefirst surface 106 by an adhesive layer 136 (generally a non-conductive polymer) between the substratefirst surface 106 and the stand-off 132, which provides mechanical strength to themicroelectronic device assembly 100. - Ordinarily, the
heat dissipation device 122 would be constructed from a thermally conductive metal, such as copper, copper alloys, aluminum, aluminum alloys, and the like. However, in the present invention, theheat dissipation device 122 is formed from a thermally conductive ceramic material. Anantenna 142 may be embedded in the ceramicheat dissipation device 122 proximate to asecond surface 144 thereof with a conductive via 146 extending from theantenna 142 to the heat dissipation devicefirst surface 124. The conductive via 146 is connected to aconductive pillar 148 extending from the conductive via 146 to an antenna signal trace 152 proximate the substratefirst surface 106 to at least oneconductive bump 108. Thus, theantenna 142 is in electrical communication with themicroelectronic die 102. Theantenna 142 and conductive via 146 may be made of any applicable electrically conductive material including but not limited to silver, gold, copper, aluminum, and the like. - Of course, it is understood that the
antenna 142 may be fabricated to be disposed on the heat dissipation devicefirst surface 124, thereby eliminating the need the conductive via 146, as shown inFIG. 3 . It is understood by those skilled in art that theconductive pillar 148 may be attached by any means known in the art, including but not limited to the application of solder paste followed by solder reflow. - The ceramic materials used to fabricate the antenna-containing ceramic
heat dissipation device 122 preferably, after firing, achieves a dense, non-porous microstructure below about 950° C. such that it can be co-fired with low resistance conductive materials such as gold, copper, and silver, commonly known as low temperature co-fired ceramic (LTCC) materials. These ceramic materials may include, but are not limited to calcium titanate, magnesium titanate, barium titanate, forsterite, magnesium calcium titanate, 951 Green Tape™, available from DuPont Corporation, Wilmington, Del., USA, and the like. The ceramic materials (after being fired), preferably have a low CTE, which is about that of silicon or gallium arsenide. Thus, with low CTE, embedding theantenna 142 in the ceramicheat dissipation device 122 will greatly diminish frequency fluctuations caused by expansion and contraction. - Furthermore, as is known in the art, the thermal properties of the antenna-containing ceramic
heat dissipation device 122 can enhanced by formingthermal vias 156 through the antenna-containing ceramicheat dissipation device 122 from the heat dissipation devicefirst surface 124 and the heat dissipation devicesecond surface 144 proximate themicroelectronic die 102, as shown inFIGS. 1 and 2 (wherein dashedline 158 shows the position ofmicroelectronic die 102 inFIG. 2 ). Thethermal vias 156 can be, but is not limited to, metal plugs, heat pipes, and the like. Moreover, the antenna-containing ceramicheat dissipation device 122 may include, high surface area (e.g., finned) structures, and may include a heat pipe, thermoelectric coolers, and cold plates (refrigeration or liquid cooled) attached to the heat dissipation devicesecond surface 144. - It is, of course, understood that the
antenna 142 need not be embedded in aheat dissipation device 122. Theantenna 142 may be itself embedded alone in aceramic material 162 in its own antenna package 160, as shown inFIGS. 4 and 5 . The antenna package 160 may be attached to thesubstrate 104 either with theantenna 142 facing the substratefirst surface 106 and be attached directly to theantenna signal trace 152, as shown inFIG. 4 , or may be attached with theantenna 142 opposing the substratefirst surface 106, which includes the conductive via 146 that is attached directly to theantenna signal trace 152, as shown inFIG. 5 . -
FIGS. 6-9 illustrate one embodiment of a method of fabrication of an antenna package of the present invention. As shown inFIG. 6 , a green (unfired) ceramic layer, such as the 951 Green Tape™ with a 5 mil thickness, is sized and layered (shown as a first greenceramic layer 204 and a second green ceramic layer 206) to a desired thickness to form an initial lay-up 210. The initial lay-up 210 may have a conductive viaopening 208 extending therethrough. The conductive viaopening 208 may be formed, by any known method, after layering the individual green ceramic layer, or may be preformed in each individual green ceramic layer and aligned during layering, as will be understood to those skilled in the art. - As shown in
FIG. 7 , aconductive material 212 may be dispensed within the conductive viaopening 208, and anantenna 214 is disposed on the initial lay-up 210 to form an intermediate lay-up 220. Theconductive material 212 may include, but is not limited to, metal and metal-filled polymers, and may include 6141 Ag Via Fill Conductor, available from DuPont Corporation, Wilmington, Del., USA. Theantenna 214 may be a preformed structure placed on the initial lay-up 210, a conductive paste disposed on the initial lay-up 210, a structure formed by patterning and deposition on the initial lay-up 210, or the like, as will be understood to those skill in the art. As shown inFIG. 8 , the initial lay-up 210 and intermediate lay-up 220 may be formed in acast 222, or the intermediate lay-up 220 may be placed in thecast 222. Once in thecast 222, an unfired, powdered ceramic 224, such as calcium titanate, magnesium titanate, barium titanate, forsterite, magnesium calcium titanate, powdered 951 Green Tape™, available from DuPont Corporation, Wilmington, Del., USA, and the like, is dispensed on the intermediate lay-up 220, preferably to a level substantially even with anupper surface 226 of theantenna 214, such that the antennaupper surface 226 is not covered with the unfired, powdered ceramic 224, to form the final lay-up 230. - As shown in
FIG. 9 , the final lay-up 230 is then fired at a temperature of about 850° C. to form a substantially contiguousceramic structure 232 binding all but the antennaupper surface 226 and to form a conductive via 234 from the conductive material 212 (seeFIG. 7 ). Thus, anantenna package 240, similar to the antenna package 160 ofFIG. 5 , is formed. An antenna package, similar to the antenna package 160 ofFIG. 4 , is fabricated in the same manner as described inFIGS. 6-9 with the exception that no conductive viaopening 208 or formation of the conductive via 234 is necessary. -
FIGS. 10-14 illustrates one embodiment of a method of fabrication of an antenna-containing heat dissipation device of the present invention. As shown inFIG. 10 , a green (unfired) ceramic layer, such as the 951 Green Tape™ with a 5 mil thickness, is sized and layered (shown as a first greenceramic layer 304 and a second green ceramic layer 306) to a desired thickness to form an initial lay-up 310. The initial lay-up 310 may have a conductive viaopening 308 and a plurality of thermal viaopenings 312 extending therethrough. The conductive viaopening 308 and the thermal viaopenings 312 may be formed after layering the individual green ceramic tape layer, or may be preformed in each individual green ceramic tape layer and aligned during layering, as will be understood to those skilled in the art. Pre-shaped green ceramic tape layers 314 are layered horizontally (shown) or vertically to form stand-offs 316. - As shown in
FIG. 11 , aconductive material 322, such as 6141 Ag Via Fill Conductor, available from DuPont Corporation, Wilmington, Del., USA, may be dispensed within the conductive viaopening 308 and the thermal viaopenings 312, and anantenna 324 is disposed on the initial lay-up 310 to form an intermediate lay-up 330. Theantenna 324 may be a preformed structure placed on the initial lay-up 310, a conductive paste disposed on the initial lay-up 310, a structure formed by patterning and deposition on the initial lay-up 310, or the like, as will be understood to those skill in the art. As shown inFIG. 12 , the initial lay-up 310 and intermediate lay-up 330 may be formed in acast 332, or the intermediate lay-up 330 may be placed in thecast 332. Once in thecast 332, an unfired, powdered ceramic 334 is dispensed on the intermediate lay-up 330, preferably to a level substantially even with an upper surface 336 of theantenna 324, such that the antenna upper surface 336 is not covered with the unfired, powdered ceramic 334, to form the final lay-up 340. - As shown in
FIG. 13 , the final lay-up 340 is then fired at a temperature of about 850° C. to form a substantially contiguous ceramic structure 342 binding all but the antenna upper surface 336 and to form a conductive via 344 andthermal vias 346 from the conductive material 322 (seeFIG. 7 ). Thus, an antenna-containing ceramicheat dissipation device 350, similar to the antenna-containingheat dissipation device 122 ofFIG. 1 , is formed. - As shown in
FIGS. 14 and 15 , an antenna-containing ceramic heat dissipation device 360 (seeFIG. 15 ), similar to the antenna-containing ceramicheat dissipation device 122 ofFIG. 3 , is fabricated in the same manner as described inFIGS. 6-9 with the exception that no conductive viaopening 308 or formation of the conductive via 344 is necessary and different positioning of theantenna 324 and the stand-offs 316. Additionally, if the stand-offs 316 completely surrounds the periphery of the heat dissipation device, no cast is needed to contain the powderedceramic material 334 as it will be contained by the stand-offs 316, as shown inFIG. 15 . The structure is then fired to form the antenna-containing ceramicheat dissipation device 360, as shown inFIG. 16 . - The packages formed by the present invention may be used in a hand-held
device 410, such as a cell phone or a personal data assistant (PDA), as shown inFIG. 16 . The hand-helddevice 410 may comprise anexternal substrate 420 with at least one of themicroelectronic device assembly 100 ofFIG. 1 orFIG. 2 and the assemblies ofFIG. 4 orFIG. 5 collectively represented aselement 430 attached thereto, within ahousing 440. Theexternal substrate 420 may be attached to various peripheral devices including an input device, such askeypad 450, and a display device, such anLCD display 460. - The microelectronic device assemblies formed by the present invention may also be used in a
computer system 510, as shown inFIG. 17 . Thecomputer system 510 may comprise an external substrate ormotherboard 520 with at least one of themicroelectronic device assembly 100 ofFIG. 1 orFIG. 2 and the assemblies ofFIG. 4 orFIG. 5 collectively represented aselement 530 attached thereto, within a housing orchassis 540. The external substrate ormotherboard 420 may be attached to various peripheral devices including inputs devices, such as akeyboard 550 and/or amouse 560, and a display device, such as aCRT monitor 570. - Having thus described in detail embodiments of the present invention, it is understood that the invention defined by the appended claims not to be limited by particular details set forth in the above description, as many apparent variations thereof are possible without departing from the spirit or scope thereof.
Claims (22)
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US10/746,462 US7122891B2 (en) | 2003-12-23 | 2003-12-23 | Ceramic embedded wireless antenna |
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US10/746,462 US7122891B2 (en) | 2003-12-23 | 2003-12-23 | Ceramic embedded wireless antenna |
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US7122891B2 US7122891B2 (en) | 2006-10-17 |
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US20140225805A1 (en) * | 2011-03-15 | 2014-08-14 | Helen K. Pan | Conformal phased array antenna with integrated transceiver |
US8907472B2 (en) | 2013-02-07 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC package comprising perforated foil sheet |
US8907461B1 (en) * | 2013-05-29 | 2014-12-09 | Intel Corporation | Heat dissipation device embedded within a microelectronic die |
US9832867B2 (en) | 2015-11-23 | 2017-11-28 | Medtronic, Inc. | Embedded metallic structures in glass |
TWI754944B (en) | 2020-03-24 | 2022-02-11 | 日本商英幸技術股份有限公司 | Electromagnetic wave transceiving apparatus |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284080B1 (en) * | 1997-02-21 | 2001-09-04 | Medtronic, Inc. | Barrier metallization in ceramic substrate for implantable medical devices |
US6556169B1 (en) * | 1999-10-22 | 2003-04-29 | Kyocera Corporation | High frequency circuit integrated-type antenna component |
US6582979B2 (en) * | 2000-11-15 | 2003-06-24 | Skyworks Solutions, Inc. | Structure and method for fabrication of a leadless chip carrier with embedded antenna |
US6770159B1 (en) * | 2003-03-26 | 2004-08-03 | Harris Corporation | Method of fabricating an RF substrate with selected electrical properties |
US6784765B2 (en) * | 2000-06-27 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic device |
US20040257279A1 (en) * | 2003-06-19 | 2004-12-23 | Dennis Tebbe | Dielectric substrate with selectively controlled effective permittivity and loss tangent |
-
2003
- 2003-12-23 US US10/746,462 patent/US7122891B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284080B1 (en) * | 1997-02-21 | 2001-09-04 | Medtronic, Inc. | Barrier metallization in ceramic substrate for implantable medical devices |
US6556169B1 (en) * | 1999-10-22 | 2003-04-29 | Kyocera Corporation | High frequency circuit integrated-type antenna component |
US6784765B2 (en) * | 2000-06-27 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic device |
US6582979B2 (en) * | 2000-11-15 | 2003-06-24 | Skyworks Solutions, Inc. | Structure and method for fabrication of a leadless chip carrier with embedded antenna |
US6770159B1 (en) * | 2003-03-26 | 2004-08-03 | Harris Corporation | Method of fabricating an RF substrate with selected electrical properties |
US20040257279A1 (en) * | 2003-06-19 | 2004-12-23 | Dennis Tebbe | Dielectric substrate with selectively controlled effective permittivity and loss tangent |
Cited By (55)
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---|---|---|---|---|
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US20080042264A1 (en) * | 2004-02-27 | 2008-02-21 | Colgan Evan G | Apparatus and Methods for Cooling Semiconductor Integrated Circuit Package Structures |
US20060109121A1 (en) * | 2004-11-19 | 2006-05-25 | Dishongh Terry J | RFID embedded in device |
US20110180811A1 (en) * | 2005-03-31 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic device having wireless chip |
US9350079B2 (en) | 2005-03-31 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic device having wireless chip |
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US8742480B2 (en) * | 2005-03-31 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic device having wireless chip |
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US20080116586A1 (en) * | 2006-11-17 | 2008-05-22 | Stats Chippac, Inc. | Methods for manufacturing thermally enhanced flip-chip ball grid arrays |
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US20120154238A1 (en) * | 2010-12-20 | 2012-06-21 | Stmicroelectronics Sa | Integrated millimeter wave transceiver |
US10181654B2 (en) | 2010-12-20 | 2019-01-15 | Stmicroelectronics Sa | Integrated millimeter wave transceiver |
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US9257754B2 (en) * | 2010-12-20 | 2016-02-09 | Stmicroelectronics Sa | Integrated millimeter wave transceiver |
US9721872B1 (en) * | 2011-02-18 | 2017-08-01 | Amkor Technology, Inc. | Methods and structures for increasing the allowable die size in TMV packages |
US11527496B2 (en) | 2012-11-20 | 2022-12-13 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor device comprising semiconductor die and interposer and manufacturing method thereof |
US9391043B2 (en) | 2012-11-20 | 2016-07-12 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
US10679952B2 (en) | 2012-11-20 | 2020-06-09 | Amkor Technology, Inc. | Semiconductor device having an encapsulated front side and interposer and manufacturing method thereof |
US9728514B2 (en) | 2012-11-20 | 2017-08-08 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
US9797187B2 (en) * | 2013-01-14 | 2017-10-24 | Carnegie Mellon University, A Pennsylvania Non-Profit Corporation | Devices for modulation of temperature and light based on phase change materials |
US20140196868A1 (en) * | 2013-01-14 | 2014-07-17 | Carnegie Mellon University, Center For Technology Transfer And Enterprise Creation | Devices for Modulation of Temperature and Light Based on Phase Change Materials |
US9543242B1 (en) | 2013-01-29 | 2017-01-10 | Amkor Technology, Inc. | Semiconductor package and fabricating method thereof |
US9852976B2 (en) | 2013-01-29 | 2017-12-26 | Amkor Technology, Inc. | Semiconductor package and fabricating method thereof |
US9704842B2 (en) | 2013-11-04 | 2017-07-11 | Amkor Technology, Inc. | Interposer, manufacturing method thereof, semiconductor package using the same, and method for fabricating the semiconductor package |
US10943858B2 (en) | 2013-11-19 | 2021-03-09 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor package and fabricating method thereof |
US10192816B2 (en) | 2013-11-19 | 2019-01-29 | Amkor Technology, Inc. | Semiconductor package and fabricating method thereof |
US11652038B2 (en) | 2013-11-19 | 2023-05-16 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor package with front side and back side redistribution structures and fabricating method thereof |
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US10319688B2 (en) * | 2013-12-09 | 2019-06-11 | Intel Corporation | Antenna on ceramics for a packaged die |
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US9780015B2 (en) | 2014-03-19 | 2017-10-03 | Stmicroelectronics Sa | Integrated circuit chip assembled on an interposer |
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US10083923B2 (en) * | 2015-09-21 | 2018-09-25 | Intel Corporation | Platform with thermally stable wireless interconnects |
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