US20040045507A1 - Apparatus for plasma doping - Google Patents

Apparatus for plasma doping Download PDF

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Publication number
US20040045507A1
US20040045507A1 US10/615,851 US61585103A US2004045507A1 US 20040045507 A1 US20040045507 A1 US 20040045507A1 US 61585103 A US61585103 A US 61585103A US 2004045507 A1 US2004045507 A1 US 2004045507A1
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Prior art keywords
plasma
chamber
coil
container
substrate
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Abandoned
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US10/615,851
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English (en)
Inventor
Tomohiro Okumura
Ichiro Nakayama
Bunji Mizuno
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Panasonic Corp
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Individual
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Priority to TW092125349A priority Critical patent/TWI331000B/zh
Priority to CNB031602029A priority patent/CN100373549C/zh
Assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. reassignment MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIZUNO, BUNJI, NAKAYAMA, ICHIRO, OKUMURA, TOMOHIRO
Publication of US20040045507A1 publication Critical patent/US20040045507A1/en
Priority to US11/585,938 priority patent/US7575987B2/en
Assigned to PANASONIC CORPORATION reassignment PANASONIC CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

Definitions

  • the present invention relates to an apparatus for doping an impurity ion into a substrate such as semiconductor substrate by the use of a plasma doping, or plasma implantation technique.
  • FIG. 11 shows a conventional plasma doping device generally indicated by reference numeral 200 .
  • the device 200 has a container 202 defining a vacuum chamber 204 therein and an electrode or table 206 provided within the chamber 204 for supporting a substrate 208 .
  • the container 202 is connected to both a gas supply 210 for supplying a doping gas such as B 2 H 6 and a vacuum pump 212 for generating a vacuum in the chamber 204 .
  • Also provided to the container 202 are a micro wave guide 214 which emits micro wave through a window 216 into the chamber and a magnetic device 218 for directing the micro wave toward the substrate 208 .
  • the window 216 is made of dielectric material such as silica glass.
  • the table 206 is connected through a capacitor 220 to a high frequency power source 222 for controlling the voltage of the table 206 and thereby an amount of impurity to be doped in the substrate.
  • the doping gas is supplied into the chamber 204 where it is ionized by the interaction between the micro wave and a DC magnetic field to form a micro wave plasma, i.e., cyclotron resonance plasma 224 .
  • the ionized boron is implanted in the surface of the substrate 208 with an aid of the power source 222 .
  • the substrate 208 is then formed with a metal wiring layer on doped surface.
  • a thin oxidation layer is generated on the metal wiring layer.
  • gate electrodes are formed on the surface by a conventional deposition technique such as CVD, which results in MOS transistors.
  • the doping gas such as B 2 H 6 including boron which exhibits an electric activity when it is added to the substrate such as silicon substrate is a toxic material.
  • all the materials in the doping gas is doped in the substrate.
  • the doped hydrogen ion can result in a generation of the lattice defect in the substrate at the subsequent heat treatment such as epitaxial grow process.
  • JP 9-115851 A
  • the doping device generally indicated by reference numeral 230 has a block 232 including impurity and provided within the chamber 204 .
  • the block 232 is supported by a fixed support 234 electrically connected through a capacitor 236 to a high frequency power source 238 .
  • the gas such as argon fed from the gas supply 210 is ionized to form the plasma ion, which in turn impinges against the block to draw the impurity ion therefrom for its implantation into the substrate.
  • This device certainly eliminates the drawbacks of the previous device in FIG.
  • the impurity ion drawn from the block 232 is implanted unevenly in the substrate 208 due to the unsymmetrical arrangement of the block 232 and the substrate 208 .
  • an object of the present invention is to provide an improved apparatus for plasma doping, which is capable of doping an impurity into a substrate in an even manner.
  • an apparatus for plasma doping of the present invention has a vacuum container defining a chamber therein.
  • the container has a portion bearing an impurity to be doped in a substrate provided in the chamber.
  • a plasma generator for generating a plasma in the chamber by forming an electric field through the portion of the chamber, which causes ion in the plasma to impinge against the portion of the container to draw the impurity out of the portion of the container into the chamber.
  • FIG. 1A is a schematic cross sectional view of a doping device according to the first embodiment of the present invention.
  • FIG. 1B is an enlarged cross sectional view of the top wall in FIG. 1A.
  • FIG. 1C is an enlarged cross sectional view of the top wall of another embodiment of the present invention.
  • FIG. 2 is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 3 is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 4 is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 5 is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 6A is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 6B is a plan view of an electrode used in the doping device shown in FIG. 6A.
  • FIG. 7 is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 8A is a schematic cross sectional view of another doping device of the present invention.
  • FIG. 8B is a schematic perspective sectional view of an electrode used in the doping device shown in FIG. 6A.
  • FIG. 9 is a schematic cross sectional of another doping device of the present invention.
  • FIG. 10 is a schematic cross sectional of another doping device of the present invention.
  • FIG. 11 is a schematic cross sectional of a conventional doping device.
  • FIG. 12 is a schematic cross sectional of another conventional doping device.
  • FIG. 1A there is shown a plasma doping device, generally indicated by reference numeral 10 , according to the present invention.
  • the doping device 10 has a container 12 defining a chamber 14 therein.
  • the container 12 has a first portion 16 defining side walls 18 and a bottom wall 20 of the container 12 and a second portion 22 defining a top wall 24 of the container 12 and removably attached to the first portion 16 .
  • the first portion 16 of the container 12 is made of electrically conductive material such as aluminum and stainless steel and is electrically grounded to the earth.
  • the second portion 22 of the container 12 i.e., top wall 24
  • the second portion 22 of the container 12 is made of dielectric material such as silicone, silica glass and silicon nitride, through which a high frequency electric field is induced in the chamber 14 .
  • the bottom wall 20 has an opening 26 defined therein and fluidly connected to a vacuum pump 28 such as turbo-molecular pump.
  • a vacuum pump 28 such as turbo-molecular pump.
  • a valve member 30 which is supported by an elevating device not shown so that an open ratio of the opening 26 and thereby the vacuum in the chamber 12 is controlled to a certain value such as 0.04 Pa by elevating the valve member 30 .
  • a lower surface portion of the top wall 24 defining in part the chamber 14 , bears a layer 25 A made of implantation impurity such as boron.
  • the boron layer has a thickness of about 10-100 82 m.
  • the lower limit is determined by considering the exchanging frequency and the upper limit is determined by considering the exfoliation of the layer.
  • the boron 25 B may be incorporated in an interior of the top wall 24 . In this instance, the boron is mixed in the manufacturing process of the wall 24 .
  • the top wall is made of silica glass
  • the powdery boron is uniformly added to the molten silica.
  • the top wall is made of ceramic material, the boron is mixed therewith before its sintering.
  • a table 32 Provided also in the chamber 14 is a table 32 .
  • the table 32 is supported at the center of the chamber 14 by a plurality of supports 34 and spaced a certain distance away from the top dielectric wall 24 so that a certain volume of space 36 is defined for a plasma formation.
  • the table 32 has a top flat surface for supporting a substrate 38 such as silicon plate to which a predetermined ion is implanted.
  • a plasma gas supply source 40 is fluidly connected to the chamber 14 so that a certain gas including argon (Ar) is supplied therefrom into the chamber 14 .
  • argon Ar
  • the amounts of argon is controlled to 10 sccm (standard cubic centimeters per minute).
  • a spiral coil 44 is arranged above the dielectric wall 24 and outside the chamber 14 in an coaxial fashion with the cylindrical container 12 .
  • the central end portion 46 of the coil 44 is positioned higher than the opposite peripheral end portion 48 so that the coil 44 outlines a conical configuration.
  • the central end portion 46 of the coil 44 is connected to a first high frequency power source 50 capable of applying a high frequency electric power of 13.56 MHz, for example.
  • the peripheral end portion 48 of the coil 44 is grounded to the earth.
  • a second high frequency power source 52 or power supply is electrically connected to the table 32 .
  • the substrate 38 is positioned on the table 32 so that the substrate 38 makes a substantially full surface contact with opposing surface of the table 32 .
  • the gas with Ar is supplied from the plasma gas supply source 40 into the chamber 14 .
  • the chamber 14 is vacuumed by the pump 28 and the vacuum is controlled by the upward and/or downward movement of the valve member 30 and, as a result, by the adjustment of the opening ratio of the opening 26 .
  • the temperature of the table is maintained at 10° C.
  • the high frequency powers 800W and 500W are applied from the power sources 50 and 52 to the coil 44 and the table 32 , respectively.
  • the plasma 42 is generated above the substrate 38 in the space 36 .
  • the spiral coil 44 may be arranged parallel to the top wall 24 so that every portion of the coil 44 leaves a constant distance from the top wall 24 . This improves the boron delivery from the central portion of the boron layer or the top wall. Therefore, in this instance, the peripheral portion of the top wall 24 may support more boron than the central portion thereof so that every portion of the top wall 24 supplies boron in a substantially even manner.
  • the top wall 24 may have a semidome portion 60 .
  • a coil 62 or antenna surrounds the semidome portion 60 .
  • a magnetic coil 64 which is connected to a power source 66 , is provided around the coil 62 to generate a magnetic field passing through the semidome portion 60 toward the substrate. This causes a helicon wave plasma or a magnetic neutral loop plasma, each having an elevated density than the inductively coupled plasma. Also, a DC magnetic field or a low frequency magnetic field less than 1 kHz may be generated in the chamber 14 by controlling a current applied from the power source 66 to the magnetic coil 64 .
  • two magnetic coils 68 and 70 may be provided around and symmetrically on opposite sides of the coil 62 and connected to respective power sources 72 and 74 capable of applying respective electric currents flowing different directions so that repellant magnetic fields are generated on opposite sides of the coil 62 , causing a magnetic neutral loop plasma having an elevated density than the inductively coupled plasma.
  • a DC magnetic field or a low frequency magnetic field equal to or less than 1 kHz may be generated in the chamber 14 by controlling the current from the power sources to the magnetic coils.
  • FIG. 5 shows another modification of the device.
  • the central end portion of the antenna or coil 46 is also connected to another high frequency power supply 76 supplying a power of 500 kHz.
  • the device further includes a reflected wave detection circuit 80 for detecting a reflected wave of 13.56 MHz from the coil 44 back to the power source 50 .
  • the detection circuit 80 is connected to a band-pass filter 82 to prevent the circuit 80 from being adversely affected by the high frequency of 500 kHz from the power source 76 .
  • the peripheral end 48 of the coil 44 is connected through a capacitor 84 with a capacitance of about 1,000 picofarad, for example, to the ground.
  • Tests were conducted by the use of the device shown in FIG. 5.
  • a temperature of the table 32 was maintained at 10° C.
  • the gas including Ar was supplied into the chamber at 10 sccm (standard cubic centimeters per minute).
  • the pressure in the chamber was maintained at 0.04 Pa.
  • the spiral coil 44 was applied with 13.56 MHz high frequency power of 800 watts from the power source 50 and, simultaneously, with 500 kHz high frequency power of 400 watts from the power source 76 .
  • another high frequency power was applied to the table 32 from the power source 52 .
  • the high frequency powers of 13.56 MHz (f1) and 500 kHz (f2) were applied to the coil, it is preferably determined that the latter frequency f2 is about one tenth that of the former frequency f1.
  • components of the impedance of the capacitor 84 with respect to the higher and lower high frequency f1 and f2 are calculated, respectively, as follows:
  • ratios of voltages applied to the coil 44 and the capacitor 84 with respect to f1 and f2 are calculated, respectively, as follows:
  • the impedance of the coil 44 with respect to f1 is two times more than that of capacitor 84 or when the impedance of the coil with respect to f2 is less than one-fifth that of the capacitor, the difference between f1 and f2 is effectively reflected in the ratio of voltages applied to the coil 44 and the capacitor 84 . It is understood that, when using a plurality of spiral coils arranged in one plane, the impedance is examined for each combination of coil and capacitor.
  • FIG. 6A shows another embodiment of the doping device of the present invention.
  • a plate-like electrode 90 is provided on or above the top wall 24 and below the coil 44 .
  • the electrode 90 is so designed that it has a plurality of branches each extending radially outwardly from and symmetrically with its center corresponding to the axis of the chamber 14 .
  • the electrode 90 is connected to a high frequency power source 92 so that it supplies a high frequency power of 900 kHz to the electrode.
  • the amount of boron to be discharged from the surface of or the interior of the top wall into the chamber 14 in an even manner.
  • each of the branches of the electrode extends perpendicular to the spiral coil, which provides no adverse affect to the magnetic field generated by the coil.
  • the spiral coil 44 may be positioned in one plane parallel to the top wall rather than in the conical fashion.
  • the electrode 94 has an annular portion surrounding the semidome portion 60 and a plurality of branches 98 each extending radially outwardly from the annular portion and along the outer surface of the semidome portion 60 .
  • an enclosure 100 may be provided so that it covers the semidome portion 60 and the electrode 94 to define a cavity 102 therearound.
  • the cavity 102 is connected to a magnetron 104 for generating micro wave.
  • the micro wave from the magnetron 104 is transmitted through the cavity 102 to the electrode 94 , causing a cyclotron resonance plasma in the chamber 14 having a higher density than the induced coupling plasma.
  • the implantation device of the present invention may be modified and/or improved in various manners.
  • the semiconductor plate made of silicon is used for the substrate, it may be made of any material.
  • the boron is used for the implantation impurity, i.e., dopant
  • another impurity including arsenic, phosphorus, aluminum, and antimony may be implanted instead or additionally.
  • argon Ar is used for the dilution gas, it may be replaced with another gas made of nitrogen and helium, for example.

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US10/615,851 2002-07-11 2003-07-10 Apparatus for plasma doping Abandoned US20040045507A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW092125349A TWI331000B (en) 2002-07-11 2003-09-15 Plasma doping method
CNB031602029A CN100373549C (zh) 2003-07-10 2003-09-27 等离子体掺杂装置
US11/585,938 US7575987B2 (en) 2002-07-11 2006-10-25 Method of plasma doping

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JP2002202483A JP4013674B2 (ja) 2002-07-11 2002-07-11 プラズマドーピング方法及び装置
JP2002-202483 2002-07-11

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US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
WO2007013753A1 (en) * 2005-07-25 2007-02-01 Sem Technology Co., Ltd Semiconductor doping method using pulsed inductively coupled plasma and system therefor
US20070111548A1 (en) * 2005-05-12 2007-05-17 Matsushita Electric Industrial Co., Ltd. Plasma doping method and plasma doping apparatus
US20070190759A1 (en) * 2004-12-13 2007-08-16 Matsushita Electric Industrial Co., Ltd. Plasma doping method
WO2009102871A3 (en) * 2008-02-12 2009-10-15 Varian Semiconductor Equipment Associates, Inc. Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
US20100167507A1 (en) * 2007-05-31 2010-07-01 Tokyo Electron Limited Plasma doping apparatus and plasma doping method
US20100297836A1 (en) * 2007-12-28 2010-11-25 Panasonic Corporation Plasma doping apparatus and method, and method for manufacturing semiconductor device
US8450819B2 (en) 2010-11-09 2013-05-28 Panasonic Corporation Plasma doping method and apparatus thereof
US20150104888A1 (en) * 2013-10-10 2015-04-16 Do Hyeong LEE System for determining presence of abnormality of heater for semiconductor thin film deposition apparatus
US10796884B2 (en) 2013-09-06 2020-10-06 Hitachi High-Tech Corporation Plasma processing apparatus

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JPWO2008050596A1 (ja) 2006-10-25 2010-02-25 パナソニック株式会社 プラズマドーピング方法及びプラズマドーピング装置
JP2010050188A (ja) * 2008-08-20 2010-03-04 Panasonic Corp プラズマドーピング装置
JP6120259B2 (ja) * 2012-05-10 2017-04-26 株式会社アルバック イオン注入法
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
CN112996209B (zh) * 2021-05-07 2021-08-10 四川大学 一种微波激发常压等离子体射流的结构和阵列结构

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KR100960791B1 (ko) 2010-06-01
US7575987B2 (en) 2009-08-18

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