US20030201165A1 - Method of film deposition on substrate surface and substrate produced by the method - Google Patents
Method of film deposition on substrate surface and substrate produced by the method Download PDFInfo
- Publication number
- US20030201165A1 US20030201165A1 US10/404,439 US40443903A US2003201165A1 US 20030201165 A1 US20030201165 A1 US 20030201165A1 US 40443903 A US40443903 A US 40443903A US 2003201165 A1 US2003201165 A1 US 2003201165A1
- Authority
- US
- United States
- Prior art keywords
- cathodes
- film
- substrate
- target
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000008021 deposition Effects 0.000 title claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 65
- 238000000576 coating method Methods 0.000 claims abstract description 65
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000013077 target material Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000002829 reductive effect Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims 1
- 239000004615 ingredient Substances 0.000 abstract description 45
- 238000004544 sputter deposition Methods 0.000 abstract description 35
- 238000000151 deposition Methods 0.000 abstract description 26
- 239000010408 film Substances 0.000 description 130
- 239000007789 gas Substances 0.000 description 25
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 229910001887 tin oxide Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910000600 Ba alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A method of film deposition is disclosed, which eliminates the conventional problem that a coating film having a component concentration gradient in the thickness direction and thus having a boundary with a compositional gradient or a coating film in which two or more components coexist as a mixture thereof cannot be stably obtained by sputtering. In the method, two planar cathodes are closely arranged as a pair, and a voltage is applied thereto while alternately inverting the polarities thereof so that when a target A bonded to one of the cathodes is used as a negative electrode, then a target B bonded to the other cathode and differing to the target A in component is used as a positive electrode. The targets A and B are simultaneously bombarded with positive ions while passing a substrate in front of the targets so as to cross the cathodes. Thus, a coating film having a boundary with a compositional gradient in the thickness direction or a coating film having a two-layer structure composed of a layer of ingredient A and a layer of ingredient B is deposited by sputtering through one-direction conveyance.
Description
- The present invention relates to a method of depositing a coating film on a substrate by sputtering in a vacuum apparatus which can control a reduced pressure atmosphere.
- A technique has conventionally been attempted which comprises closely arranging two cathodes, disposing targets made of different materials respectively on the cathodes, and depositing a coating film comprising the materials of the targets on a substrate by sputtering. In this case, a power supply for applying a negative voltage to each cathode is used. Namely, this technique employs separate electrical circuits for the respective cathodes.
- In the sputtering method described above, the glow discharges generated for sputtering target materials are not stable, i.e., an abnormal discharge generates frequently. The conventional technique hence has had a problem that a coating film having a desired thickness cannot be obtained or the coating film deposited has pinholes or adherent foreign substances.
- In the technique in which targets made of different materials are disposed respectively on two cathodes arranged so as to be adjacent to each other and a coating film comprising the two target materials is to be deposited on a substrate surface, it is necessary that the cathodes should be closely arranged. In this case, the glow discharge plasmas generating on the respective target surfaces are close to each other due to the magnetic field in the magnetron. As a result, target components ejected from one target accumulate on the neighboring target surface to cover the region where the target is to be bombarded with positive ions (erosion region) with an electrical insulating film. This covering causes the glow discharge plasma to be unstable and unable to last. Namely, there has been a problem that stable and continuous film deposition becomes impossible. This problem is serious especially when an oxide coating film or a semiconductor coating film is to be deposited on a substrate, and brings about fatal results. Specifically, abnormal discharges frequently occur and glow discharges stop occasionally, making it impossible to continue coating film deposition.
- The problem may be overcome by arranging two cathodes at a larger distance from each other. However, the increased distance between cathodes poses an essential problem that the target materials respectively ejected from the two targets cannot be simultaneously sputtered as a coating film.
- An object of the present invention is to provide a method in which targets differing in component or composition are disposed on two closely arranged cathodes, and atoms, molecules, or particles of the materials of the targets are simultaneously accumulated on a substrate surface by sputtering with stable glow discharges to thereby deposit a coating film comprising those two materials or compositions.
- The present invention has been achieved in order to eliminate the problem described above, and provides a method of film deposition on a substrate surface which comprises closely arranging a pair of cathodes in a vacuum apparatus in which an atmosphere having a reduced pressure can be prepared, applying a voltage thereto while alternately inverting the polarities thereof so that when one of the cathodes is used as a negative or positive electrode, then the other cathode is used as a positive or negative electrode, respectively, to generate glow discharges on targets respectively disposed on the two cathodes, and simultaneously bombarding the targets with positive ions resulting from the glow discharges to thereby sputter a coating film comprising the materials of the targets on a surface of a substrate, wherein the material of the target disposed on one of the cathodes differs from that of the target disposed on the other cathode and the film deposited on the substrate surface comprises both of the target materials.
- In one embodiment of the method of the present invention, the cathodes as a pair are planar cathodes arranged so that the longer sides of one of the cathodes are parallel to those of the other, and the substrate is passed in front of the cathodes in such a manner as to cross the cathodes in a direction perpendicular to the direction of the longer sides of the cathodes, whereby the coating film deposited has a concentration gradient in the thickness direction with respect to the concentration of each of the different target materials.
- In another embodiment of the method of the present invention, the two cathodes are arranged so that one is surrounded by the other, whereby the different target materials in the coating film deposited are present as a mixture of both.
- In still another embodiment of the method of the present invention, the target materials each is a metal.
- In a further embodiment of the method of the present invention, the target materials each is an electroconductive metal oxide.
- FIG. 1 is a diagrammatic sectional view illustrating one embodiment of the pair of cathodes usable in practicing the present invention.
- FIG. 2 is views illustrating another embodiment of the pair of cathodes usable in practicing the present invention.
- FIG. 3 is a graphic presentation illustrating a coating film obtained by the present invention which has a boundary having a compositional gradient.
- FIG. 4 is a graphic presentation illustrating a coating film obtained by the present invention which consists of mixed ingredients.
- FIG. 5 is a view illustrating another embodiment of the arrangement of a pair of cathodes usable in practicing the present invention.
- FIG. 6 is a graphic presentation illustrating the thickness-direction refractive index distribution of the coating film of a half mirror obtained by practicing the present invention.
- FIG. 7 is a graphic presentation illustrating the spectral reflectance and transmittance of the half mirror obtained by practicing the present invention.
-
1A, 1B: Cathode 2A: Target made of ingredient A 2B: Target made of ingredient B 3: Alternate-inversion discharge plasma 4: Substrate 5: Sputtering gas feed pipe 6: Shroud 7: Magnetron power supply 8: Oscillator 9: Substrate holder - FIG. 1 is a sectional view of important parts of one embodiment of a sputtering apparatus which can be used in practicing the method of film deposition of the present invention. In this embodiment shown in FIG. 1, planar magnetron cathodes are used. Specifically, two known
magnetron cathodes substrate 4 is rectangular (directions perpendicular to the page are the longitudinal directions for the cathodes) have been arranged side by side in the sputtering apparatus. A target made of ingredient A (indicated bysymbol 2A) and a target made of ingredient B (indicated bysymbol 2B) have been bonded to the front sides (lower sides in the figure) of the respective cathodes. The distance Lc between thetarget 2A and thetarget 2B is suitably regulated to a relatively small value according to the minimum distance Ls between each target and the substrate and to the intended use of the substrate. From this standpoint, a preferred film deposition apparatus is one which is equipped with a mechanism capable of increasing or reducing the distance between thecathode 1A and thecathode 1B while maintaining a reduced-pressure atmosphere therein. - Argon gas or, if desired, a reactive gas such as oxygen or nitrogen is introduced into the film deposition apparatus through a
gas feed pipe 5. Simultaneously therewith, the film deposition apparatus is evacuated with a vacuum pump (not shown) to regulate the chamber so as to have an atmosphere having a pressure reduced to a given degree. The pressure and gas composition in this reduced-pressure atmosphere are regulated, by means of the vacuum pump and gas introduction, so that sputtering is possible in the atmosphere. - A negative voltage is applied to the
cathodes power supply 7 to generate glow discharge plasmas on the target surfaces, whereby thetarget 2A (ingredient A) and thetarget 2B (ingredient B) are bombarded with positive ions. When thecathode 1A serves as a positive electrode, thecathode 1B serves as a negative electrode. In applying a voltage to the cathodes, use can be made of sine wave, pulse wave, or time-asymmetrical wave Also usable is any desired waveform capable of Fourier expansion. A DC bias having a polarity common to the two cathodes may be simultaneously applied. - A
shroud 6 has been attached so as to surround the two cathodes. Theshroud 6 functions, for example, to hold the introduced gas around the cathodes, to prevent adhesion of particles ejected from the targets, and to regulate film thickness. Namely, the shroud serves not only to prevent the particles ejected from the cathodes from scattering but to confine the plasma to thereby regulate film thickness. - A negative voltage is applied to the
cathodes magnetron power supply 7 disposed on the periphery of the apparatus. In this voltage application, the polarities of the respective cathodes are alternately inverted with an oscillator (polarity converter) 8 in such a manner that when thecathode 1A is used as a negative electrode, then thecathode 1B is used as a positive electrode and when thecathode 1B is used as a negative electrode, then thecathode 1A is used as a positive electrode. When viewed momentarily, a negative voltage is applied to one of the cathodes and a positive voltage is applied to the other cathode. Thus, an alternate-inversion glow discharge 3 is generated and, as a result, thetargets - The frequency at which the polarities are inverted is preferably 100 Hz or higher, more preferably 1 kHz or higher. Frequencies lower than 100 Hz are undesirable in that the effect of removing charges from the target surfaces is reduced, resulting in an unstable discharge. The frequency of polarity inversion is preferably 1 GHz or lower, more preferably 100 kHz or lower. This is because frequencies exceeding 1 GHz result in reduced driving stability of the power supply, making it difficult to obtain a stable discharge.
- The voltage to be applied may have any waveform as long as the waveform has such a positiveness/negativeness balance that the charges present on the surfaces of the two targets are neutralized with respect to the axis of time. Examples of the waveform include sine wave, rectangular pulse wave, and time-asymmetrical wave A given DC bias component may be added to between the reference zero potential among the cathode potentials during driving and the earth potential of the sputtering apparatus.
- In the present invention, the polarities of the cathodes are inverted at a frequency within the preferred range specified above, whereby the so-called cathode sputtering is conducted intermittently, when viewed microscopically, with respect to each target. However, when viewed macroscopically from the standpoint of film deposition, the
target 2A and thetarget 2B are simultaneously bombarded with positive ions and ingredient A and ingredient B are simultaneously sputtered on the substrate, due to the selection of a polarity inversion frequency within the preferred range. - According to the present invention, the charges present on the surfaces of both targets are neutralized by the inversion potentials and inversion currents, whereby the targets are bombarded with positive ions while being destaticized. Because of this, the film deposition according to the present invention is free from the generation of an abnormal discharge (arcing, corona, etc.) which occurs, for example, due to a thermal shock produced when the charges accumulated on the surface of the deposited film cause it to suffer dielectric breakdown
- Furthermore, the glow discharge plasmas have the effect of cleaning the surfaces of the respective counter targets by sputtering. As a result, film deposition proceeds while the film which is accumulating on the erosion surface of each clean target is being removed. Because of this, the accumulation of an electrical insulating film on the erosion region surfaces of the two targets is inhibited and the so-called anode disappearance phenomenon, which is observed in the deposition of an oxide film with an ordinary single target, does not occur. Consequently, the generation of glow discharge plasmas never stops during film deposition.
- In the present invention, an ingredient comprising A (hereinafter referred to as “ingredient A”) and an ingredient comprising B (hereinafter referred to as “ingredient B”) can be simultaneously deposited on a substrate surface either throughout the period of from the initiation of coating film deposition on the substrate surface to the termination thereof or during part of that period. As a result, the coating film can be either a film having a concentration gradient in the film thickness direction with respect to the concentration of each of ingredient A and ingredient B or a film comprising a mixture of ingredient A and ingredient B. When ingredient A and ingredient B are deposited so as to constitute a two-layer structure, the concentration gradients in the thickness direction form a boundary having a compositional gradient.
- A reactive gas may be used as a sputtering gas. If desired, the substrate may be heated to deposit a film comprising a mixture of ingredient A and ingredient B. These coating films are determined while taking account of the distance Lc between the two cathodes, minimum distance Ls between the substrate and each target,, substrate conveyance speed A, sputtering rate, etc.
- In depositing the mixture film, the distance Lc between the
cathode 1A and thecathode 1B, shown in FIG. 1, is preferably 15 cm or shorter, more preferably 10 cm or shorter. Thetarget 2A and thetarget 2B are disposed in such a state that they are electrically insulated from each other. - In depositing a two-layer coating film having a concentration gradient in the film thickness direction, e.g., having a boundary having a compositional gradient, in the present invention, the cathodes are preferably arranged at a distance Lc of from 1 mm to 150 cm. Such a coating film having a boundary having a compositional gradient can be obtained not only by the sputtering of ingredient A and ingredient B using argon gas but also by reactive sputtering using a gas containing a reactive gas such as oxygen or nitrogen. According to the present invention, a two-layer film composed of a layer of ingredient A and a layer of ingredient B can be deposited while inhibiting the boundary between these ingredients from being contaminated. Furthermore, the multilayered film can be made to have a thickness-direction continuous profile of a property.
- FIG. 2 shows another embodiment of the pair of cathodes, which can be used in practicing an embodiment of the method of the present invention. The cathode pair shown in FIG. 2 consists of a
cathode 1A which is a disk-form cathode disposed at the center and acathode 1B which is a ring-form cathode concentric with and surrounding thecathode 1A. The inner and outer cathodes each may be elliptic or rectangular. As illustrated by the sectional view in FIG. 2A, the disk-form cathode 1A and the ring-form cathode 1B are caused to undergo alternate polarity inversion and cathode sputtering. - FIG. 3 is a graphic presentation illustrating a coating film which is obtained by practicing the present invention and has a boundary having a compositional gradient. In this coating film, the substrate side and the surface side consist of ingredient A and ingredient B, respectively. However, the coating film has, in a thickness-direction central part thereof, a boundary layer having a continuously changing gradient with respect to the amount of each of ingredient A and ingredient B. Due to the presence of this boundary layer, the mechanical, electrical, optical, and chemical properties and other properties of the film can be continuously changed around the interface between a layer A on the surface side and a layer B on the substrate side. Furthermore, adhesion at the interface is enhanced and interfacial peeling can be prevented.
- FIG. 4 is a graphic presentation illustrating a mixture film obtained by the present invention. The figure shows that the content of ingredient A and that of ingredient B in the coating film are constant in the thickness direction. In the case where a mixture film comprising ingredient A and ingredient B in a given proportion is to be deposited in the present invention, it is preferred to dispose a film thickness compensator plate in the space around the surface of at least one of the
targets - In the present invention, ingredient A and ingredient B may, of course, be different substances, and may also be ones which are composed of the same components but differ in composition.
- The film deposition method employing planar magnetron cathodes shown in FIG. 1 is suitable for the deposition of coating films such as transparent conductive films, antistatic films, electromagnetic shielding films, and antireflection films for medium- to large-sized flat displays, transparent conductive films and antireflection films for half mirrors and solar cells, and heat shielding films, electromagnetic shielding films, and antireflection films for window glasses for use in buildings, motor vehicles, etc. The cathodes shown in FIG. 2 are suitable for use in depositing a coating film on substrates having a relatively small area.
- These targets each usually has, on the back side thereof, a backing plate mainly comprising copper, a cooling mechanism for cooling the backing plate, and a reinforced magnet for magnetron constitution. These members each have been united with the target or is disposed separately therefrom.
- Examples of the sputtering target materials usable in the present invention include metals, metal oxides, metal sulfides, and metal nitrides. For example, use can be made of metallic or semiconducting elements belonging to
groups 2A to 6B in the third to seventh periods of the periodic table and including lanthanide elements. Specific examples thereof include indium, tin, zinc, gallium, antimony, aluminum, bismuth, titanium, zirconium, tantalum, niobium, molybdenum, lanthanum, cerium, and silicon. Targets having electrical conductivity are preferred, and those having a surface resistivity of 10 kΩ/□ or lower are preferred from the standpoint of enabling a stable discharge. In the case of silicon, for example, it is preferred to obtain electrical conductivity by doping with a slight amount of boron, aluminum, or phosphorus. - The above metals (including semiconducting elements) in the periodic table can be used as target materials to deposit metal oxide films, metal oxynitride films, and metal nitride films on substrates by reactive or another sputtering. In the case where metal oxides or the like are used as targets, sinters are often used as the targets. In this case, the targets preferably have the electrical conductivity shown above. The present invention is applicable also to the formation of metal films or semiconductor films from the above metals and semiconducting elements in the periodic table.
- Furthermore, the oxides, sulfides, and nitrides of the aforementioned metals can be used as targets. In this case, it is preferred to use a target in which the metal has been doped with a small amount of an impurity element whose group number in the periodic table is larger by one than the group number of that metal, as in the relationship between indium and tin in ITO, for the purpose of improving the electrical conductivity of the target surface. As a result, carriers which carry an electric current through the target generate stably and, hence, a discharge can stably occur on the sputtering target.
- Examples are shown below by which the present invention can be practiced using the sputtering apparatus shown in FIG. 1, which employs two planar magnetron cathodes arranged closely.
- The following film deposition conditions are preferably used.
- Distance between two targets, Lc: 0.1 to 50 cm
- Distance between target and substrate, Ls: 5 to 20 cm
- Sputtering gas: Argon or a sputtering gas containing a small amount of oxygen is used when a metal oxide coating film is deposited using metal oxide targets; and argon containing a reactive gas, such as oxygen or nitrogen, is used as a sputtering gas when a metal oxide film or metal nitride film is deposited using metal targets.
- Sputtering pressure: 1 to 20 mTorr
- Substrate temperature: room temperature to 350° C.
- Alternate-inversion frequency: 1 to 100 kHz
- Voltage amplitude between two cathodes: 200 to 1,000 V
- A sintered body of a mixture of indium oxide and a small proportion of tin oxide is used as a
target 2A, and a sintered body of a mixture of zinc oxide and aluminum oxide is used as atarget 2B A mixed gas comprising argon and a small amount of oxygen is used to conduct sputtering simultaneously using the two targets while a glass plate as a substrate is being conveyed in one direction so as to pass in front of the targets (see FIG. 1) By this method, a coating film is obtained which has a substrate-side layer comprising ITO and a surface-side layer comprising zinc oxide containing a slight amount of aluminum and has, in a thickness-direction central part thereof, a gradient-composition boundary where the ITO content and the zinc oxide content decreases and increases, respectively, from the substrate side toward the surface side A feature of this coating film resides in that the surface-side layer has a higher rate of etching with acids than the substrate-side layer. Consequently, the coating film, when processed into a transparent electrode for liquid crystal displays, organic electroluminescent display elements, or the like, can be patterned so as to have a section which is trapezoidal or nearly trapezoidal. Thus, an abrupt change in level due to the thickness of the transparent electrode can be avoided. - A sintered body of a mixture of indium oxide and a small proportion of tin oxide is used as a
target 2A, and a sintered body of a mixture of tin oxide and a small proportion of antimony oxide is used as atarget 2B. A mixed gas comprising argon and a small amount of oxygen is used to conduct sputtering simultaneously using the two targets while a glass plate as a substrate is being conveyed in one direction so as to pass in front of the targets. By this method, a coating film is obtained which has a substrate-side layer comprising ITO (low-resistance layer) and a surface-side layer comprising tin oxide (containing a slight amount of antimony oxide; the layer has high resistance to acids and alkalis and excellent marring resistance) and has, in a thickness-direction central part thereof, a gradient-composition boundary where the ITO content and the tin oxide content decreases and increases, respectively, from the substrate side toward the surface side. This coating film can be used as a transparent conductive film which has low electrical resistance and is less apt to suffer marring. - The method described above can be modified so as to deposit a coating film comprising superposed layers having different compositions, for example, a coating film having a substrate-side layer comprising ITO containing 5 wt % tin oxide (low-resistance layer) and a surface-side layer comprising ITO containing about 20 wt % tin oxide Thus, a transparent conductive film is obtained which can be processed into an electrode through acid etching and has low electrical resistance, and the surface of which has high chemical resistance.
- An alloy of barium (Ba) and strontium (Sr) is used as a
target 2A, and titanium (Ti) metal is used as atarget 2B. A mixed gas comprising argon and a small amount of oxygen is used to conduct sputtering simultaneously using the two targets while a substrate is being conveyed in one direction so as to pass in front to the targets. By this method, a coating film is obtained which has a substrate-side layer comprising an oxide containing barium and strontium and a surface-side layer comprising titanium oxide and has, in a thickness-direction central part thereof, a region where the composition changes continuously from the substrate side toward the surface side. The two sides of this coating film differ in dielectric characteristics. This coating film can be used as a ferroelectric film useful in memories and piezoelectric devices, wherein the ferroelectric film is required to have continuous and asymmetric dielectric characteristics. - An example of mixture films which can be deposited using the sputtering apparatus illustrated in FIG. 2, employing a disk-form cathode and a ring-form cathode, will be given below The substrate is held stationally or rotated right over the targets. The distance between the substrate and each target is preferably about 5 cm or larger, and the distance between the two targets preferably about from 1 to 10 mm.
TABLE 1 Target Target Cathode Coating film Characteristic Example A B type Material Structure performance Application 1 In2O3/SnO2 ZnO/Al2O3 planar oxide gradient process- trans- mixture mixture ability in parent patterning electrode 2 In2O3/SnO2 SnO2/Sb2O3, planar oxide gradient chemical trans- mixture mixture resistance parent electrode 3 Ba-Sr Ti metal planar oxide gradient asymmetric piezo- alloy ferroelectric electric property element 4 In2O3 SnO2/Sb2O3 disk/ oxide mixture compositional trans- mixture ring controll- parent ability electrode 5 SnO2/Sb2O3 ZnO/Al2O3 planar oxide gradient hardness, protective mixture mixture improved adhesion film 6 Sn Zn planar oxide gradient hardness, protective improved film adhesion 7 Sn Zn planar oxide two-layer hardness protective film 8 Ti Si planar oxide gradient continuously optical changing film refractive index 9 Al Si planar oxy- gradient improved protective nitride weather- film ability 10 5%-SnO2/ 20%-SnO2/ planar oxide gradient chemical trans- 95%-In2O3 80%-In2O3 resistance parent mixture mixture electrode - An indium oxide sintered is used as an outer ring-
form target 2A, and a tin oxide sintered body is used as an inner disk-form target 2B. A mixed gas comprising argon and a small amount of oxygen is used to conduct sputtering simultaneously using the two targets while a glass plate as a substrate is held so as to face the targets. Thus, a coating film comprising a mixture of indium oxide and tin oxide is deposited on the substrate. This coating film can be used as a transparent conductive film for electronic devices. - Other examples of coating films obtained by practicing the present invention are shown in Table 1 together with Examples 1 to 4. The coating films of Examples 5 to 7 are useful as dielectric layers (protective films) in electromagnetic shielding or heat shielding films formed, for example, by alternately superposing a silver film and a metal oxide film.
- Example 8 is useful in producing a multilayered optical film comprising a high refractive index oxide layer and a low refractive index oxide layer superposed thereon, such as an antireflection film or a half mirror, for regulating the gradient of refractive index around the interface between the layers. An Example in which a half mirror was produced from a glass substrate using the carrousel type sputtering apparatus shown in FIG. 5 is described below in detail.
- As shown in the diagrammatic sectional view of important parts in FIG. 5, the sputtering apparatus used has a cylindrical substrate holder9 rotatable on an axis and two
cathodes cathodes target 2A and thetarget 2B, respectively. An argon/oxygen mixed gas was used as a sputtering gas. The sputtering mode was set to the oxygen-reactive mode so as to deposit a titanium dioxide film and a silicon dioxide film respectively from the two targets onto glass substrates. Such conditions included a sputtering atmosphere pressure of 0.4 Pa and a sputtering gas composition comprising 80 vol % oxygen and 20 vol % argon. During the coating film deposition, the substrate holder 9 was rotated at a constant speed. - As the substrates were used glass plates having a refractive index of 1.52. A coating film having a thickness of 100 nm was deposited on a surface of each glass plate. The voltage applied to each target was changed during the deposition so that the content of silicon dioxide and that of titanium dioxide in the film deposited had a gradient in the thickness direction. In this Example, the coating film was deposited so that the layer thereof ranging from the glass plate surface to a distance of 30 nm from the surface consisted substantially of silicon dioxide and the layer thereof ranging from 50 nm to 100 nm in terms of distance from the glass plate surface consisted substantially of titanium dioxide, and that the intermediate region ranging from 30 to 50 nm in terms of distance from the glass plate surface had a compositional gradient in the thickness direction. In FIG. 6 is shown a refractive index distribution in the thickness direction.
- In FIG. 7 are shown the spectral transmittance and reflectance of the film-coated glass plates obtained. A half mirror whose reflectance and transmittance were about 40% and about 60%, respectively, in the visible region, i.e., nearly constant in the visible region, was obtained. This half mirror is useful, for example, as the back substrate of a reflection type liquid-crystal display element. According to the present invention, such an optical film can be obtained as a single-layer film.
- Example 9 is useful for obtaining a protective film having a continuous compositional gradient (passivation film) by superposing different materials. An example of a coating film composed of superposed layers differing in composition is shown as Example 10.
- According to the present invention, coating film deposition on a substrate surface is conducted by a method comprising closely arranging a pair of cathodes, applying a negative voltage thereto while alternately inverting the polarities thereof so that when one of the cathodes is used as a negative or positive electrode, then the other cathode is used as a positive or negative electrode, respectively, to generate glow discharges on targets respectively disposed on the two cathodes, and simultaneously bombarding the targets with positive ions resulting from the glow discharges to thereby sputter a coating film on a surface of a substrate, wherein the material or composition of the target disposed on one of the cathodes differs from that of the target disposed on the other cathode and the film deposited on the substrate surface comprises both of the target materials or compositions. This method can stably and continuously deposit at a high rate a coating film having a boundary having a compositional gradient in the thickness direction, a coating film comprising a mixture of the two ingredients, or a coating film having a multilayer constitution comprising superposed layers of the respective ingredients.
- When planar cathodes are used as the two cathodes, a coating film having a boundary having a compositional gradient, a two-layer film having high adhesion, or a coating film comprising a mixture of the two ingredients can be easily deposited on a substrate having a large area, by conducting film deposition while the substrate is passed in front of the cathodes so as to cross the cathodes.
- Furthermore, when a pair of cathodes in which one is surrounded by the other is used as the two cathodes, a coating film comprising a mixture of target ingredients can be easily deposited at a low equipment cost.
Claims (6)
1. A method of film deposition on a substrate surface which comprises closely arranging a pair of cathodes in a vacuum apparatus in which an atmosphere having a reduced pressure can be prepared, applying a voltage thereto while alternately inverting the polarities thereof so that when one of the cathodes is used as a negative or positive electrode, then the other cathode is used as a positive or negative electrode, respectively, to generate glow discharges on targets respectively disposed on the two cathodes, and simultaneously bombarding the targets with positive ions resulting from the glow discharges to thereby sputter a coating film comprising the materials of the targets on a surface of a substrate,
wherein the material of the target disposed on one of the cathodes differs from that of the target disposed on the other cathode and the film deposited on the substrate surface comprises both of the target materials.
2. The method of film deposition on a substrate surface of claim 1 , wherein the cathodes as a pair are planar cathodes arranged so that the longer sides of one of the cathodes are parallel to those of the other, and the substrate is passed in front of the cathodes in such a manner as to cross the cathodes in a direction perpendicular to the direction of the longer sides of the cathodes, whereby the coating film deposited has a concentration gradient in the thickness direction with respect to the concentration of each of the different target materials.
3. The method of film deposition on a substrate surface of claim 1 , wherein the two cathodes are arranged so that one is surrounded by the other, whereby the different target materials in the coating film deposited are present as a mixture of both.
4. The method of film deposition on a substrate surface of claim 1 , 2 or 3, wherein the target materials each is a metal.
5. The method of film deposition on a substrate surface of claim 1 , 2 or 3, wherein the target materials each is an electroconductive metal oxide.
6. A substrate with reflective coating which comprises a transparent substrate and formed thereon two coating layers comprising a silicon dioxide film and a titanium dioxide film which have been deposited by the method of claim 4 or 5 so that the two-layer coating has a compositional gradient around the boundary between the layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/404,439 US20030201165A1 (en) | 1999-04-23 | 2003-04-02 | Method of film deposition on substrate surface and substrate produced by the method |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPP.HEI.11-116608 | 1999-04-23 | ||
JP11660899 | 1999-04-23 | ||
JPP2000-36550 | 2000-02-15 | ||
JP2000036550A JP2001003166A (en) | 1999-04-23 | 2000-02-15 | Method for coating surface of substrate with coating film and substrate by using the method |
US09/553,170 US6585871B1 (en) | 1999-04-23 | 2000-04-20 | Method of film deposition on substrate surface and substrate produced by the method |
US10/404,439 US20030201165A1 (en) | 1999-04-23 | 2003-04-02 | Method of film deposition on substrate surface and substrate produced by the method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/553,170 Division US6585871B1 (en) | 1999-04-23 | 2000-04-20 | Method of film deposition on substrate surface and substrate produced by the method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030201165A1 true US20030201165A1 (en) | 2003-10-30 |
Family
ID=26454912
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/553,170 Expired - Fee Related US6585871B1 (en) | 1999-04-23 | 2000-04-20 | Method of film deposition on substrate surface and substrate produced by the method |
US10/404,439 Abandoned US20030201165A1 (en) | 1999-04-23 | 2003-04-02 | Method of film deposition on substrate surface and substrate produced by the method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/553,170 Expired - Fee Related US6585871B1 (en) | 1999-04-23 | 2000-04-20 | Method of film deposition on substrate surface and substrate produced by the method |
Country Status (4)
Country | Link |
---|---|
US (2) | US6585871B1 (en) |
EP (1) | EP1046727A3 (en) |
JP (1) | JP2001003166A (en) |
CN (1) | CN1271784A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080041716A1 (en) * | 2006-08-18 | 2008-02-21 | Schott Lithotec Usa Corporation | Methods for producing photomask blanks, cluster tool apparatus for producing photomask blanks and the resulting photomask blanks from such methods and apparatus |
US20080202919A1 (en) * | 2007-02-22 | 2008-08-28 | Jeon Geon Han | Apparatus And Method For Manufacturing Stress-Free Flexible Printed Circuit Board |
US20130171753A1 (en) * | 2011-09-20 | 2013-07-04 | Taiwan Micropaq Corporation | Progressive-refractivity antireflection layer and method for fabricating the same |
US20140166479A1 (en) * | 2012-12-13 | 2014-06-19 | Samsung Display Co., Ltd. | Sputtering apparatus |
CN110128029A (en) * | 2019-05-08 | 2019-08-16 | 江西沃格光电股份有限公司 | The preparation method and display panel of polychrome film |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100768176B1 (en) * | 2001-02-07 | 2007-10-17 | 삼성에스디아이 주식회사 | Functional film having an improved optical and electrical properties |
KR100768175B1 (en) * | 2001-02-07 | 2007-10-17 | 삼성에스디아이 주식회사 | Functional film having an improved optical and electrical properties |
CN1258616C (en) * | 2001-02-07 | 2006-06-07 | 旭硝子株式会社 | Spatter device and spatter film forming method |
FR2820510B1 (en) * | 2001-02-07 | 2005-11-18 | Samsung Sdi Co Ltd | FUNCTIONAL FILM WITH IMPROVED OPTICAL AND ELECTRICAL PROPERTIES |
DE10145050C1 (en) * | 2001-09-13 | 2002-11-21 | Fraunhofer Ges Forschung | Device for coating substrates having a curved surface contains a pair of rectangular magnetron sources and substrate holders arranged in an evacuated chamber |
US6919133B2 (en) | 2002-03-01 | 2005-07-19 | Cardinal Cg Company | Thin film coating having transparent base layer |
EP1480920B1 (en) * | 2002-03-01 | 2006-11-02 | Cardinal CG Company | Thin film coating having transparent base layer |
US7749622B2 (en) | 2002-10-22 | 2010-07-06 | Asahi Glass Company, Limited | Multilayer film-coated substrate and process for its production |
US6806651B1 (en) * | 2003-04-22 | 2004-10-19 | Zond, Inc. | High-density plasma source |
US7179350B2 (en) * | 2003-05-23 | 2007-02-20 | Tegal Corporation | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
EP1681367A4 (en) * | 2003-05-26 | 2008-08-27 | Shinmaywa Ind Ltd | Film-forming apparatus and film-forming method |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
EP1743876A3 (en) * | 2003-12-22 | 2007-07-25 | Cardinal CG Company | Graded photocatalytic coatings |
US7663319B2 (en) | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US9123508B2 (en) | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
DE102004014323B4 (en) * | 2004-03-22 | 2009-04-02 | Von Ardenne Anlagentechnik Gmbh | Method and device for producing gradient layers or layer sequences by physical sputtering |
US7750575B2 (en) * | 2004-04-07 | 2010-07-06 | Zond, Inc. | High density plasma source |
KR101116105B1 (en) * | 2004-05-21 | 2012-02-13 | 주식회사 케이티 | Method for fabricating a titanium oxide film for film capacitor |
US7229533B2 (en) | 2004-06-25 | 2007-06-12 | Guardian Industries Corp. | Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer |
JP2008505841A (en) | 2004-07-12 | 2008-02-28 | 日本板硝子株式会社 | Low maintenance coating |
EP1628322A1 (en) * | 2004-08-17 | 2006-02-22 | Applied Films GmbH & Co. KG | Support structure for a shield |
JP2006144053A (en) * | 2004-11-17 | 2006-06-08 | Bridgestone Corp | METHOD FOR FORMING N-DOPED ZnO FILM |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) * | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
JP4524209B2 (en) * | 2005-03-09 | 2010-08-11 | 富士フイルム株式会社 | Deposition equipment |
US8153282B2 (en) * | 2005-11-22 | 2012-04-10 | Guardian Industries Corp. | Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide |
JP4963023B2 (en) * | 2006-01-11 | 2012-06-27 | 株式会社アルバック | Sputtering method and sputtering apparatus |
US7775613B2 (en) * | 2006-03-06 | 2010-08-17 | Intier Automotive Inc. | Storage assembly |
WO2007124291A2 (en) | 2006-04-19 | 2007-11-01 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
EP1923902B2 (en) * | 2006-11-14 | 2014-07-23 | Applied Materials, Inc. | Magnetron sputtering source, sputter coating system and method for coating a substrate |
EP1970465B1 (en) | 2007-03-13 | 2013-08-21 | JDS Uniphase Corporation | Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index |
JP2009031741A (en) * | 2007-06-28 | 2009-02-12 | Nippon Electric Glass Co Ltd | Optical multilayered film base material |
JP5474796B2 (en) | 2007-09-14 | 2014-04-16 | 日本板硝子株式会社 | Low maintenance coating and method of manufacturing low maintenance coating |
US8808513B2 (en) | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
DE102008046480A1 (en) * | 2008-09-09 | 2010-03-11 | Solarworld Innovations Gmbh | A method for producing a solderable LFC solar cell backside and solar module interconnected from such LFC solar cells |
JP5286143B2 (en) * | 2009-04-15 | 2013-09-11 | 株式会社アルバック | Hardened resin substrate, window glass substitute |
US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
JP5573597B2 (en) * | 2010-10-28 | 2014-08-20 | 日本電気硝子株式会社 | Method for producing multilayer film |
TW201318841A (en) * | 2011-09-05 | 2013-05-16 | Asahi Glass Co Ltd | Glass substrate having alkali barrier layer attached thereto, and glass substrate having transparent conductive oxide film attached thereto |
US9140396B2 (en) | 2013-03-15 | 2015-09-22 | Water-Gen Ltd. | Dehumidification apparatus |
RU2551331C2 (en) * | 2013-07-10 | 2015-05-20 | Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (Минпромторг России) | Method of production of multi-layer gradient coating by method of magnetron deposition |
US10151060B2 (en) * | 2015-11-24 | 2018-12-11 | Water-Gen Ltd | Steam compression dryer |
EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
US10472274B2 (en) | 2017-07-17 | 2019-11-12 | Guardian Europe S.A.R.L. | Coated article having ceramic paint modified surface(s), and/or associated methods |
JP6657535B2 (en) * | 2017-12-26 | 2020-03-04 | キヤノントッキ株式会社 | Sputter film forming apparatus and sputter film forming method |
CN110158033B (en) * | 2019-05-29 | 2022-03-22 | 汕头万顺新材集团股份有限公司 | Enhanced barrier film and preparation method thereof |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3616402A (en) * | 1968-05-31 | 1971-10-26 | Western Electric Co | Sputtering method and apparatus |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
US4692230A (en) * | 1985-04-15 | 1987-09-08 | Hitachi, Ltd. | Thin film forming method through sputtering and sputtering device |
US5080455A (en) * | 1988-05-17 | 1992-01-14 | William James King | Ion beam sputter processing |
US5169509A (en) * | 1991-03-04 | 1992-12-08 | Leybold Aktiengesellschaft | Apparatus for the reactive coating of a substrate |
US5200277A (en) * | 1988-02-29 | 1993-04-06 | Hitachi, Ltd. | Electroluminescent device |
US5330632A (en) * | 1992-01-29 | 1994-07-19 | Leybold Aktiengesellschaft | Apparatus for cathode sputtering |
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
US5611899A (en) * | 1994-11-19 | 1997-03-18 | Leybold Aktiengesellschaft | Device for suppressing flashovers in cathode sputtering installations |
US5620792A (en) * | 1993-11-15 | 1997-04-15 | Imation Corp. | Magneto-optic recording medium having constant reflectance over a range of wavelengths |
US5721633A (en) * | 1995-03-17 | 1998-02-24 | Asahi Glass Company Ltd. | Electrochromic device and multilayer glazing |
US5827409A (en) * | 1995-07-03 | 1998-10-27 | Anelva Corporation | Method and apparatus for forming thin film for liquid crystal display |
US6096174A (en) * | 1996-12-13 | 2000-08-01 | Leybold Systems Gmbh | Apparatus for coating a substrate with thin layers |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB830392A (en) * | 1956-05-17 | 1960-03-16 | Edwards High Vacuum Ltd | Improvements in or relating to cathodic sputtering |
JPS63243270A (en) * | 1987-03-30 | 1988-10-11 | Sumitomo Light Metal Ind Ltd | Formation of multilayered thin film by sputtering |
JPH02277768A (en) * | 1989-04-20 | 1990-11-14 | Fuji Photo Film Co Ltd | Sputtering method |
-
2000
- 2000-02-15 JP JP2000036550A patent/JP2001003166A/en active Pending
- 2000-04-20 US US09/553,170 patent/US6585871B1/en not_active Expired - Fee Related
- 2000-04-20 EP EP00108042A patent/EP1046727A3/en not_active Withdrawn
- 2000-04-22 CN CN00108625.1A patent/CN1271784A/en active Pending
-
2003
- 2003-04-02 US US10/404,439 patent/US20030201165A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3616402A (en) * | 1968-05-31 | 1971-10-26 | Western Electric Co | Sputtering method and apparatus |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
US4692230A (en) * | 1985-04-15 | 1987-09-08 | Hitachi, Ltd. | Thin film forming method through sputtering and sputtering device |
US5200277A (en) * | 1988-02-29 | 1993-04-06 | Hitachi, Ltd. | Electroluminescent device |
US5080455A (en) * | 1988-05-17 | 1992-01-14 | William James King | Ion beam sputter processing |
US5169509A (en) * | 1991-03-04 | 1992-12-08 | Leybold Aktiengesellschaft | Apparatus for the reactive coating of a substrate |
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
US5330632A (en) * | 1992-01-29 | 1994-07-19 | Leybold Aktiengesellschaft | Apparatus for cathode sputtering |
US5620792A (en) * | 1993-11-15 | 1997-04-15 | Imation Corp. | Magneto-optic recording medium having constant reflectance over a range of wavelengths |
US5611899A (en) * | 1994-11-19 | 1997-03-18 | Leybold Aktiengesellschaft | Device for suppressing flashovers in cathode sputtering installations |
US5721633A (en) * | 1995-03-17 | 1998-02-24 | Asahi Glass Company Ltd. | Electrochromic device and multilayer glazing |
US5827409A (en) * | 1995-07-03 | 1998-10-27 | Anelva Corporation | Method and apparatus for forming thin film for liquid crystal display |
US6096174A (en) * | 1996-12-13 | 2000-08-01 | Leybold Systems Gmbh | Apparatus for coating a substrate with thin layers |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080041716A1 (en) * | 2006-08-18 | 2008-02-21 | Schott Lithotec Usa Corporation | Methods for producing photomask blanks, cluster tool apparatus for producing photomask blanks and the resulting photomask blanks from such methods and apparatus |
US20080202919A1 (en) * | 2007-02-22 | 2008-08-28 | Jeon Geon Han | Apparatus And Method For Manufacturing Stress-Free Flexible Printed Circuit Board |
US8354009B2 (en) * | 2007-02-22 | 2013-01-15 | Sungkyunkwan University Foundation For Corporate Collaboration | Apparatus and method for manufacturing stress-free flexible printed circuit board |
US20130171753A1 (en) * | 2011-09-20 | 2013-07-04 | Taiwan Micropaq Corporation | Progressive-refractivity antireflection layer and method for fabricating the same |
US20140166479A1 (en) * | 2012-12-13 | 2014-06-19 | Samsung Display Co., Ltd. | Sputtering apparatus |
CN110128029A (en) * | 2019-05-08 | 2019-08-16 | 江西沃格光电股份有限公司 | The preparation method and display panel of polychrome film |
Also Published As
Publication number | Publication date |
---|---|
US6585871B1 (en) | 2003-07-01 |
CN1271784A (en) | 2000-11-01 |
EP1046727A3 (en) | 2003-11-26 |
JP2001003166A (en) | 2001-01-09 |
EP1046727A2 (en) | 2000-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6585871B1 (en) | Method of film deposition on substrate surface and substrate produced by the method | |
CN1826423B (en) | Transparent conductive oxides | |
US5691044A (en) | Light absorptive antireflector | |
US6896981B2 (en) | Transparent conductive film and touch panel | |
EP0781076B1 (en) | Transparent conductive laminate and electroluminescence element | |
EP1271560B1 (en) | Transparent electroconductive film and touch panel | |
US5548186A (en) | Bus electrode for use in a plasma display panel | |
JP2000040429A (en) | Manufacturing of zinc oxide transparent conductive film | |
KR20080100358A (en) | Electronic device, method of manufacture of same and sputtering target | |
Bräuer et al. | New approaches for reactive sputtering of dielectric materials on large scale substrates | |
KR20100057032A (en) | Conductive laminate | |
GB2372042A (en) | Functional film with concentration gradient | |
US6685805B2 (en) | Method of manufacturing substrate having transparent conductive film, substrate having transparent conductive film manufactured using the method, and touch panel using the substrate | |
US6328857B1 (en) | Method for forming coating on substrate and sputtering apparatus used for the method | |
US3916075A (en) | Chemically highly resistant material | |
JP4168689B2 (en) | Thin film laminate | |
KR960013650A (en) | Alkali metal diffusion barrier layer | |
JPH0957892A (en) | Transparent conductive laminate | |
KR100189218B1 (en) | Formation of ito transparent conductive film | |
JP2000173768A (en) | Thin-film electroluminescent device and its manufacture | |
US5986391A (en) | Transparent electrodes | |
JP3318142B2 (en) | Transparent conductive film | |
JPH0668713A (en) | Transparent conductive film | |
Bender | Thin‐Film PVD (Rotary Target) | |
JPH0978236A (en) | Forming method of indium/tin oxide transparent conductive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |