US20020170389A1 - Silicon aluminum alloy of prealloyed powder and method of manufacture - Google Patents

Silicon aluminum alloy of prealloyed powder and method of manufacture Download PDF

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Publication number
US20020170389A1
US20020170389A1 US09/832,128 US83212801A US2002170389A1 US 20020170389 A1 US20020170389 A1 US 20020170389A1 US 83212801 A US83212801 A US 83212801A US 2002170389 A1 US2002170389 A1 US 2002170389A1
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United States
Prior art keywords
alloy
prealloyed powder
powder
balance
weight percent
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US09/832,128
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US6475263B1 (en
Inventor
Brian McTiernan
Michael Peretti
Jocelyne McGeever
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ATI POWDER METALS LLC
ATI Inc
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Individual
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Priority to US09/832,128 priority Critical patent/US6475263B1/en
Assigned to CRUCIBLE MATERIALS CORPORATION reassignment CRUCIBLE MATERIALS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MCGEEVERI, JOCELYNE O., MCTIERNAN, BRIAN J., PERETTI, MICHAEL W.
Priority to DK01310961T priority patent/DK1249509T3/en
Priority to PT01310961T priority patent/PT1249509E/en
Priority to DE60119488T priority patent/DE60119488T2/en
Priority to EP01310961A priority patent/EP1249509B1/en
Priority to AT01310961T priority patent/ATE325900T1/en
Priority to ES01310961T priority patent/ES2267689T3/en
Priority to JP2002029220A priority patent/JP2002339032A/en
Assigned to PNC BANK, NATIONAL ASSOCIATION, AS AGENT FOR THE LENDERS reassignment PNC BANK, NATIONAL ASSOCIATION, AS AGENT FOR THE LENDERS SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CRUCIBLE MATERIALS CORPORATION
Publication of US6475263B1 publication Critical patent/US6475263B1/en
Application granted granted Critical
Publication of US20020170389A1 publication Critical patent/US20020170389A1/en
Assigned to CONGRESS FINANCIAL CORPORATION (NEW ENGLAND) reassignment CONGRESS FINANCIAL CORPORATION (NEW ENGLAND) PATENT SECURITY AGREEMENT AND COLLATERAL ASSIGNMENT Assignors: CRUCIBLE MATERIALS CORPORATION
Assigned to CRUCIBLE MATERIALS CORPORATION reassignment CRUCIBLE MATERIALS CORPORATION TERMINATION OF SECURITY INTEREST FOR PATENTS Assignors: PNC BANK, NATIONAL ASSOCIATION
Priority to CY20061100726T priority patent/CY1105259T1/en
Assigned to ATI POWDER METALS LLC reassignment ATI POWDER METALS LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: COMPACTION & RESEARCH ACQUISITION LLC
Assigned to COMPACTION & RESEARCH ACQUISITION LLC reassignment COMPACTION & RESEARCH ACQUISITION LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CRUCIBLE MATERIALS CORPORATION
Assigned to Allegheny Technologies Incorporated reassignment Allegheny Technologies Incorporated ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CRUCIBLE MATERIALS CORPORATION
Assigned to COMPACTION & RESEARCH ACQUISITION LLC reassignment COMPACTION & RESEARCH ACQUISITION LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CRUCIBLE MATERIALS CORPORATION
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Definitions

  • the invention relates to a silicon-base alloy of prealloyed powder containing aluminum and is preferably in the form of gas atomized prealloyed powder suitable for consolidation to produce sputtering targets.
  • Planar and rotatable sputtering targets of a silicon base alloy containing aluminum have conventionally been produced using plasma spray techniques with elemental blended powder used as the feed stock. These targets are primarily used to provide conductive, scratch resistant, and glare resistant coatings to video flat panel displays as well as automotive glass.
  • a binary silicon-base alloy of prealloyed powder having, in weight percent, less than 10 aluminum, excluding zero.
  • the alloy has 6% maximum aluminum, excluding zero, and more preferably, the alloy has about 6% aluminum.
  • the alloy may be in the form of gas atomized, prealloyed powder. This powder may be consolidated to form a consolidated article therefrom, which may be a sputtering target.
  • the consolidated article is characterized by a microstructure substantially free of unalloyed silicon and aluminum. This provides a high degree of uniformity throughout the structure of the article.
  • the binary alloy of prealloyed powder in accordance with the invention may be produced from a heat of the alloy that is gas atomized to produce prealloyed powder particles therefrom.
  • the heat may be produced by vacuum induction melting.
  • the plasma spray coupons were cut and polished for examination using a scanning electron microscope (SEM) and energy dispersive X-ray analysis.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A silicon base binary alloy of prealloyed powder having less than 10% aluminum, excluding zero. The alloy may be in the form of gas atomized prealloyed powder, which powder may be consolidated to form an article. Preferably, the article is a sputtering target.

Description

    DESCRIPTION OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The invention relates to a silicon-base alloy of prealloyed powder containing aluminum and is preferably in the form of gas atomized prealloyed powder suitable for consolidation to produce sputtering targets. [0002]
  • 2. Background of the Invention [0003]
  • Planar and rotatable sputtering targets of a silicon base alloy containing aluminum have conventionally been produced using plasma spray techniques with elemental blended powder used as the feed stock. These targets are primarily used to provide conductive, scratch resistant, and glare resistant coatings to video flat panel displays as well as automotive glass. [0004]
  • These conventional targets are deficient in that the compositions thereof are not uniform as a result of the use of elemental powder, which results in non-uniformity of the finished, coated surface produced therefrom. [0005]
  • It is accordingly a primary object of the present invention to provide a binary silicon base alloy of prealloyed powder containing aluminum which may be used in the production of sputtering targets that provides advantages both in uniformity of composition and ease of target manufacture over conventional practices. [0006]
    • SUMMARY OF THE INVENTION
  • In accordance with the invention, a binary silicon-base alloy of prealloyed powder is provided having, in weight percent, less than 10 aluminum, excluding zero. Preferably, the alloy has 6% maximum aluminum, excluding zero, and more preferably, the alloy has about 6% aluminum. [0007]
  • The alloy may be in the form of gas atomized, prealloyed powder. This powder may be consolidated to form a consolidated article therefrom, which may be a sputtering target. [0008]
  • By the use of the practice of the invention, the consolidated article is characterized by a microstructure substantially free of unalloyed silicon and aluminum. This provides a high degree of uniformity throughout the structure of the article. [0009]
  • The binary alloy of prealloyed powder in accordance with the invention may be produced from a heat of the alloy that is gas atomized to produce prealloyed powder particles therefrom. The heat may be produced by vacuum induction melting.[0010]
    • DETAILED DESCRIPTION OF THE INVENTION
  • In accordance with the invention, samples of two gas atomized heats were tested with respect to spray evaluation. One was made using conventional practice with blended elemental powder and one was made using argon gas atomized silicon aluminum powder in accordance with the invention and identified as L1228. The compositions of these powders are shown in Table 1. [0011]
    TABLE 1
    Chemistry of Si-6% Al Powders
    Si Al Fe Zr Cu P Mn Cr C O N S
    Blend Bal. 6.13 0.010 <0.005 <0.003 <0.005 <0.005 <0.005 0.010 0.051 0.002 <0.001
    Elem.
    Pwdr.
    CRC Bal. 5.70 0.014 <0.001 <0.001 <0.005 <0.001 <0.005 0.007 0.020 0.002 <0.001
    L1228
    CRC Bal. 5.79 0.043 <0.013 <0.001 <0.005 <0.001 <0.005 0.009 0.020 0.002 <0.001
    L1229
  • The plasma spray coupons were cut and polished for examination using a scanning electron microscope (SEM) and energy dispersive X-ray analysis. [0012]
  • The examination demonstrated that the deposited layer made with prealloyed powder (L1228) was much more uniformed than that deposited from blended elemental powder. Specifically, with the elemental blended powder the deposited material was non-uniform in chemistry and aluminum-rich areas were present. With the deposited layer made with the prealloyed powder, the chemistry was uniform throughout and there was no measurable dilution from the original prealloyed powder. Consequently, the structure of the deposit resulting from prealloyed powder was much more uniform than the conventional product made with blended elemental powder. In addition, it did not contain any areas of free silicon crystals or pure aluminum which would have electrically conductive or scratch-resistant properties substantially different from the remainder of the deposit. [0013]

Claims (10)

What is claimed is:
1. A binary alloy of prealloyed powder consisting essentially of, in weight percent, less than 10 Al, excluding zero, and balance Si.
2. A binary alloy of prealloyed powder consisting essentially of, in weight percent, 6 maximum Al, excluding zero, and balance Si.
3. A binary alloy of prealloyed powder consisting essentially of, in weight percent, about 6 Al and balance Si.
4. The alloy of claims 1, 2 or 3 in the form of gas atomized, prealloyed powder.
5. The alloy of claims 1, 2 or 3 in the form of a consolidated article of gas atomized, prealloyed powder of said alloy.
6. The consolidated article of claim 5, wherein said article is characterized by a microstructure substantially free of unalloyed Si and Al.
7. A method for producing a binary alloy consisting essentially of, in weight percent, less than 10 Al, excluding zero, and balance Si, said method comprising:
producing a heat of said alloy; and
gas atomizing said heat to produce prealloyed powder particles of said alloy.
8. The method of claim 7, wherein said heat is produced by vacuum induction melting.
9. The method of claims 7 or 8, wherein said alloy consists essentially of, in weight percent, 6 maximum Al, excluding zero, and balance Si.
10. The method of claims 7 or 8, wherein said alloy consists essentially of, in weight percent, about 6 Al and balance Si.
US09/832,128 2001-04-11 2001-04-11 Silicon aluminum alloy of prealloyed powder and method of manufacture Expired - Lifetime US6475263B1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US09/832,128 US6475263B1 (en) 2001-04-11 2001-04-11 Silicon aluminum alloy of prealloyed powder and method of manufacture
ES01310961T ES2267689T3 (en) 2001-04-11 2001-12-31 ALLOY ALUMINUM SILICON PREALEED POWDER AND MANUFACTURING METHOD.
PT01310961T PT1249509E (en) 2001-04-11 2001-12-31 SILICON ALLOY AND ALUMINUM OF PRE-LINKED POINT AND MANUFACTURING PROCESS
DE60119488T DE60119488T2 (en) 2001-04-11 2001-12-31 Pre-alloyed aluminum-silicon alloy and method of its manufacture
EP01310961A EP1249509B1 (en) 2001-04-11 2001-12-31 Silicon aluminum alloy of prealloyed powder and method of manufacture
AT01310961T ATE325900T1 (en) 2001-04-11 2001-12-31 PRE-ALLOYED ALUMINUM-SILICON ALLOY AND METHOD OF PRODUCTION THEREOF
DK01310961T DK1249509T3 (en) 2001-04-11 2001-12-31 Silicon-aluminum alloy of pre-alloyed powder and process for its preparation
JP2002029220A JP2002339032A (en) 2001-04-11 2002-02-06 Two component alloy
CY20061100726T CY1105259T1 (en) 2001-04-11 2006-06-05 ALUMINUM SILICON ALLOY FROM PREMIUM ALLOY POWDER AND METHOD OF MANUFACTURE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/832,128 US6475263B1 (en) 2001-04-11 2001-04-11 Silicon aluminum alloy of prealloyed powder and method of manufacture

Publications (2)

Publication Number Publication Date
US6475263B1 US6475263B1 (en) 2002-11-05
US20020170389A1 true US20020170389A1 (en) 2002-11-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
US09/832,128 Expired - Lifetime US6475263B1 (en) 2001-04-11 2001-04-11 Silicon aluminum alloy of prealloyed powder and method of manufacture

Country Status (9)

Country Link
US (1) US6475263B1 (en)
EP (1) EP1249509B1 (en)
JP (1) JP2002339032A (en)
AT (1) ATE325900T1 (en)
CY (1) CY1105259T1 (en)
DE (1) DE60119488T2 (en)
DK (1) DK1249509T3 (en)
ES (1) ES2267689T3 (en)
PT (1) PT1249509E (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050242764A1 (en) * 2004-04-15 2005-11-03 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and semiconductor device manufacturing method
US10533248B2 (en) 2014-03-31 2020-01-14 Kabushiki Kaisha Toshiba Method of manufacturing sputtering target and sputtering target

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003243332A1 (en) * 2002-06-07 2003-12-22 Heraeus, Inc. Fabrication of ductile intermetallic sputtering targets
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
JP5215192B2 (en) * 2007-01-05 2013-06-19 株式会社東芝 Sputtering target
EP2096189A1 (en) * 2008-02-28 2009-09-02 Applied Materials, Inc. Sprayed Si- or Si:Al-target with low iron content

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402905A (en) * 1982-03-05 1983-09-06 Westinghouse Electric Corp. Production of a polycrystalline silicon aluminum alloy by a hot pressing technique
US5120352A (en) * 1983-06-23 1992-06-09 General Electric Company Method and apparatus for making alloy powder
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
US5084109A (en) * 1990-07-02 1992-01-28 Martin Marietta Energy Systems, Inc. Ordered iron aluminide alloys having an improved room-temperature ductility and method thereof
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
FR2721231B1 (en) * 1994-06-21 1996-09-06 Wheelabrator Allevard Method for atomizing a dispersible liquid material.
GB9514777D0 (en) * 1995-07-19 1995-09-20 Osprey Metals Ltd Silicon alloys for electronic packaging
DE69940854D1 (en) * 1998-12-28 2009-06-18 Ultraclad Corp METHOD FOR PRODUCING A SILICON / ALUMINUM SPUTTER TARGET

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050242764A1 (en) * 2004-04-15 2005-11-03 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and semiconductor device manufacturing method
US7064512B2 (en) 2004-04-15 2006-06-20 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and semiconductor device manufacturing method
US10533248B2 (en) 2014-03-31 2020-01-14 Kabushiki Kaisha Toshiba Method of manufacturing sputtering target and sputtering target
US11198933B2 (en) 2014-03-31 2021-12-14 Kabushiki Kaisha Toshiba Method of manufacturing sputtering target and sputtering target
US11220740B2 (en) 2014-03-31 2022-01-11 Kabushiki Kaisha Toshiba Method of manufacturing sputtering target and sputtering target

Also Published As

Publication number Publication date
DE60119488D1 (en) 2006-06-14
ATE325900T1 (en) 2006-06-15
EP1249509B1 (en) 2006-05-10
JP2002339032A (en) 2002-11-27
PT1249509E (en) 2006-09-29
ES2267689T3 (en) 2007-03-16
DE60119488T2 (en) 2006-12-14
EP1249509A3 (en) 2005-06-01
EP1249509A2 (en) 2002-10-16
CY1105259T1 (en) 2010-03-03
DK1249509T3 (en) 2006-09-11
US6475263B1 (en) 2002-11-05

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