TWI674334B - Manufacturing method of high entropy alloy coating - Google Patents
Manufacturing method of high entropy alloy coating Download PDFInfo
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- TWI674334B TWI674334B TW107140163A TW107140163A TWI674334B TW I674334 B TWI674334 B TW I674334B TW 107140163 A TW107140163 A TW 107140163A TW 107140163 A TW107140163 A TW 107140163A TW I674334 B TWI674334 B TW I674334B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/073—Metallic material containing MCrAl or MCrAlY alloys, where M is nickel, cobalt or iron, with or without non-metal elements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/123—Spraying molten metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
本發明實施例提供一種高熵合金塗層的製造方法,包括:將高熵合金材料融熔,其中高熵合金材料包括至少四種金屬元素,且此些金屬元素的含量實質上相同;藉由氣體霧化製程將融熔態的高熵合金材料形成為高熵合金粉末;以及藉由電漿噴塗製程將高熵合金粉末加熱並塗布於目標基底上。An embodiment of the present invention provides a method for manufacturing a high-entropy alloy coating, including: melting a high-entropy alloy material, wherein the high-entropy alloy material includes at least four metal elements, and the content of these metal elements is substantially the same; The gas atomization process forms the molten high-entropy alloy material into a high-entropy alloy powder; and the high-entropy alloy powder is heated and coated on the target substrate by a plasma spraying process.
Description
本發明是有關於一種塗層的製造方法,且特別是有關於一種高熵合金塗層的製造方法。 The invention relates to a method for manufacturing a coating, and more particularly to a method for manufacturing a high-entropy alloy coating.
高熵合金(high entropy alloy,HEA)是包含四種以上主要元素的合金材料。在高熵合金中,每個主要元素都具有高的原子百分比,但分別不超過約35%。因此,可充分發揮多元素所造成的高亂度效應。藉由多種元素原子的隨機散佈,可抑制脆性化合物的生成,進而可提高材料韌性。 High entropy alloy (HEA) is an alloy material containing more than four main elements. In high-entropy alloys, each major element has a high atomic percentage, but each does not exceed about 35%. Therefore, the high-order effect caused by multiple elements can be fully utilized. With the random distribution of multiple element atoms, the formation of brittle compounds can be suppressed and the toughness of the material can be improved.
高熵合金材料可由塊材或塗層的形式被利用。目前製造高熵合金塗層的方法包括藉由熔練的方式製作高熵合金塊材,接著磨碎高熵合金塊材以形成高熵合金粉末。隨後,將此高熵合金粉末塗覆於目標基底上。然而,在研磨的過程中容易在材料中形成缺陷,且研磨所產生的熱能更可能改變材料性質。如此一來,未能有效地控制高熵合金塗層的性質。 High-entropy alloy materials can be utilized in the form of blocks or coatings. The current method for manufacturing a high-entropy alloy coating includes making a high-entropy alloy block by smelting, and then grinding the high-entropy alloy block to form a high-entropy alloy powder. Subsequently, this high-entropy alloy powder is coated on a target substrate. However, defects are easily formed in the material during the grinding process, and the thermal energy generated by the grinding is more likely to change the material properties. As a result, the properties of high-entropy alloy coatings cannot be effectively controlled.
本發明提供一種高熵合金塗層的製造方法,能夠有效地控制高熵合金塗層的性質。 The invention provides a method for manufacturing a high-entropy alloy coating, which can effectively control the properties of the high-entropy alloy coating.
本發明的高熵合金塗層的製造方法包括:將高熵合金材料融熔,其中高熵合金材料包括至少四種金屬元素,且此些金屬元素的含量實質上相同;藉由氣體霧化製程將融熔態的高熵合金材料形成為高熵合金粉末;以及藉由電漿噴塗製程將高熵合金粉末加熱並塗布於目標基底上。 The manufacturing method of the high-entropy alloy coating of the present invention includes: melting a high-entropy alloy material, wherein the high-entropy alloy material includes at least four metal elements, and the content of these metal elements is substantially the same; Forming a molten high-entropy alloy material into a high-entropy alloy powder; and heating and coating the high-entropy alloy powder on a target substrate by a plasma spraying process.
在一些實施例中,融熔高熵合金材料在氣體霧化的製程中由1150℃至1500℃的高溫急速冷卻至100℃至250℃的低溫。 In some embodiments, the molten high-entropy alloy material is rapidly cooled from a high temperature of 1150 ° C to 1500 ° C to a low temperature of 100 ° C to 250 ° C in a process of gas atomization.
在一些實施例中,高熵合金粉末實質上為純的低溫相。 In some embodiments, the high-entropy alloy powder is a substantially pure low-temperature phase.
在一些實施例中,低溫相為體心立方相。 In some embodiments, the low temperature phase is a body centered cubic phase.
在一些實施例中,高熵合金粉末具有低溫相與微量的高溫相,且高溫相的含量比例大於0%,且小於10%。 In some embodiments, the high-entropy alloy powder has a low-temperature phase and a trace amount of a high-temperature phase, and the content ratio of the high-temperature phase is greater than 0% and less than 10%.
在一些實施例中,高熵合金粉末實質上為球形,且平均粒徑為60μm至90μm。 In some embodiments, the high-entropy alloy powder is substantially spherical and has an average particle diameter of 60 μm to 90 μm.
在一些實施例中,電漿噴塗製程的電漿氣體包括Ar氣與H2,且Ar氣與H2的流量比為34:1至1.5:1。 In some embodiments, the plasma gas in the plasma spraying process includes Ar gas and H 2 , and the flow ratio of the Ar gas to H 2 is 34: 1 to 1.5: 1.
在一些實施例中,電漿噴塗製程的功率範圍為20kW至55kW。 In some embodiments, the power of the plasma spray process ranges from 20 kW to 55 kW.
本發明實施例的高熵合金塗層是由前述的高熵合金塗層 的製造方法所形成的高熵合金塗層。高熵合金塗層的高溫相的含量比例大於0%且小於10%。 The high-entropy alloy coating according to the embodiment of the present invention is the foregoing high-entropy alloy coating High-entropy alloy coating formed by the manufacturing method. The content ratio of the high-temperature phase of the high-entropy alloy coating is greater than 0% and less than 10%.
在一些實施例中,高熵合金塗層的硬度為230HV至600HV,且所述高熵合金塗層為鐵磁性。 In some embodiments, the hardness of the high-entropy alloy coating is 230 HV to 600 HV, and the high-entropy alloy coating is ferromagnetic.
基於上述,本發明實施例藉由氣體霧化製程形成高熵合金粉末,且利用電漿噴塗製程來加熱高熵合金粉末且將受熱的高熵合金粉末噴塗於目標基底上,以形成高熵合金塗層。相較於由塊材磨碎得到的高熵合金粉末,在氣體霧化製程中由液態凝結的高熵合金粉末可具有成分均勻、雜質少、形狀一致與流動性佳等優點。此外,在氣體霧化製程中,液態的高熵合金材料急速冷卻至低溫。因此,所形成的高熵合金粉末可保持在低溫相。另一方面,由於高熵合金粉末在電漿噴塗製程中受電漿加熱的時間非常短,故不易生成高溫相。如此一來,所得到的高熵合金塗層能夠實質上為均勻的低溫相。在一些實施例中,還可藉由篩選高熵合金粉末的粒徑、控制電漿功率、調整電漿氣體流量、冷卻目標基底等方法來確保高熵合金塗層為實質上均勻的低溫相。由此可知,上述高熵合金塗層的製造方法可有效地控制高熵合金塗層的結晶相。如此一來,可更精準地調整高熵合金塗層的各種物理性質。 Based on the above, the embodiment of the present invention forms a high-entropy alloy powder by a gas atomization process, and uses a plasma spraying process to heat the high-entropy alloy powder and spray the heated high-entropy alloy powder on a target substrate to form a high-entropy alloy. coating. Compared with the high-entropy alloy powder obtained by pulverizing the block, the high-entropy alloy powder condensed from the liquid in the gas atomization process can have the advantages of uniform composition, less impurities, uniform shape, and good fluidity. In addition, during the gas atomization process, the liquid high-entropy alloy material is rapidly cooled to a low temperature. Therefore, the formed high-entropy alloy powder can be maintained in a low-temperature phase. On the other hand, since the high entropy alloy powder is heated by the plasma in the plasma spraying process for a very short time, it is difficult to generate a high temperature phase. In this way, the obtained high-entropy alloy coating can be a substantially uniform low-temperature phase. In some embodiments, methods such as screening the particle size of high-entropy alloy powder, controlling plasma power, adjusting plasma gas flow, and cooling the target substrate can be used to ensure that the high-entropy alloy coating is a substantially uniform low temperature phase. Therefore, it can be known that the above-mentioned manufacturing method of the high-entropy alloy coating can effectively control the crystalline phase of the high-entropy alloy coating. In this way, various physical properties of the high-entropy alloy coating can be adjusted more accurately.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
10‧‧‧高熵合金塗層製造設備 10‧‧‧High-entropy alloy coating manufacturing equipment
100‧‧‧氣體霧化裝置 100‧‧‧Gas atomization device
110‧‧‧電漿噴塗裝置 110‧‧‧ Plasma spraying device
AP‧‧‧霧化部 AP‧‧‧Atomization Department
C‧‧‧坩鍋 C‧‧‧Crucible
CB‧‧‧粉末收集腔體 CB‧‧‧ powder collection cavity
CL‧‧‧高熵合金塗層 CL‧‧‧High Entropy Alloy Coating
CP1、CP2‧‧‧特徵峰 CP1, CP2‧‧‧‧Characteristic peaks
CS‧‧‧冷卻系統 CS‧‧‧ Cooling System
DA、DB、DC、DD、DE、DF、DG、DH、DI、DJ、DK、DL、DM、DN、DO、DP、DQ、DR‧‧‧資料線 DA, DB, DC, DD, DE, DF, DG, DH, DI, DJ, DK, DL, DM, DN, DO, DP, DQ, DR‧‧‧ data cable
E1、E2‧‧‧電極 E1, E2‧‧‧ electrodes
F‧‧‧進料口 F‧‧‧Feeding port
GS‧‧‧氣體源 GS‧‧‧Gas source
IN‧‧‧進氣口 IN‧‧‧Air inlet
J‧‧‧電漿束 J‧‧‧ Plasma beam
MP‧‧‧融熔部 MP‧‧‧Melting Department
NZ‧‧‧噴嘴 NZ‧‧‧Nozzle
P‧‧‧開口 P‧‧‧ opening
TS‧‧‧目標基底 TS‧‧‧ Target Base
圖1是依照本發明一些實施例的高熵合金塗層製造設備的示意圖。 FIG. 1 is a schematic diagram of a high-entropy alloy coating manufacturing apparatus according to some embodiments of the present invention.
圖2A是實驗例1至實驗例4的高熵合金粉末的掃描式電子顯微鏡影像。 FIG. 2A is a scanning electron microscope image of the high-entropy alloy powder of Experimental Examples 1 to 4. FIG.
圖2B是實驗例6、實驗例7的高熵合金粉末的掃描式電子顯微鏡影像。 FIG. 2B is a scanning electron microscope image of the high-entropy alloy powder of Experimental Examples 6 and 7. FIG.
圖3是用於實驗例1至實驗例7的高熵合金粉末的X光繞射圖譜。 FIG. 3 is an X-ray diffraction pattern of the high-entropy alloy powder used in Experimental Examples 1 to 7. FIG.
圖4是用於實驗例1至實驗例7的高熵合金粉末的飽和磁化量對磁場強度的作圖。 FIG. 4 is a plot of the saturation magnetization of the high-entropy alloy powders used in Experimental Example 1 to Experimental Example 7 with respect to the magnetic field strength.
圖5是實驗例1至實驗例7的高熵合金塗層的X光繞射圖譜。 FIG. 5 is X-ray diffraction patterns of the high-entropy alloy coatings of Experimental Examples 1 to 7. FIG.
圖1是依照本發明一些實施例的高熵合金塗層製造設備10的示意圖。在一些實施例中,可藉由使用高熵合金塗層製造設備10以在目標基底TS上形成高熵合金塗層CL。 FIG. 1 is a schematic diagram of a high-entropy alloy coating manufacturing apparatus 10 according to some embodiments of the present invention. In some embodiments, the high-entropy alloy coating CL may be formed on the target substrate TS by using the high-entropy alloy coating manufacturing apparatus 10.
請參照圖1,高熵合金塗層製造設備10可包括氣體霧化(gas atomization)裝置100。在一些實施例中,氣體霧化裝置100包括融熔部MP。固態的高熵合金材料在融熔部MP內融化而形成融熔態的高熵合金材料。在一些實施例中,融熔部MP內可設置 有坩鍋C。固態的高熵合金材料可設置於坩鍋C內,且藉由例如是電磁感應加熱(induction heating)的方式受熱而轉變為融熔態。此時,融熔態的高熵合金材料的溫度可在1150℃至1500℃的範圍中。在一些實施例中,在加熱高熵合金材料時,融熔部MP的內部可維持在真空的環境下。此外,可將惰性氣體及/或還原氣體通入融熔部MP,以避免高熵合金材料氧化。舉例而言,惰性氣體可包括He氣、Ar氣等,而惰性氣體可包括N2、H2等。在一些實施例中,高熵合金材料包括四種以上的金屬元素。此些金屬元素皆為高熵合金材料的主要元素,且具有實質上相等的原子百分比。舉例而言,每一金屬元素的原子百分比在5at%至35at%的範圍內。在一些實施例中,高熵合金材料的金屬元素可包括由Ni、Fe、Co、Cr、Al、Ti、Zr、Cu、Mn、Si組成的群組中的至少四者。舉例而言,高熵合金材料可為Ni2FeCoCrAlxTiy。x大於或等於0,且小於或等於1.5。y大於或等於0,且小於或等於1.0。 Referring to FIG. 1, the high-entropy alloy coating manufacturing apparatus 10 may include a gas atomization device 100. In some embodiments, the gas atomizing device 100 includes a melting portion MP. The solid high-entropy alloy material is melted in the melting part MP to form a molten high-entropy alloy material. In some embodiments, a crucible C may be provided in the melting part MP. The solid high-entropy alloy material can be disposed in the crucible C, and is transformed into a molten state by being heated by, for example, electromagnetic induction heating. At this time, the temperature of the molten high-entropy alloy material may be in a range of 1150 ° C to 1500 ° C. In some embodiments, when the high-entropy alloy material is heated, the interior of the melting portion MP may be maintained in a vacuum environment. In addition, an inert gas and / or a reducing gas may be passed into the melting portion MP to avoid oxidation of the high-entropy alloy material. For example, the inert gas may include He gas, Ar gas, and the like, and the inert gas may include N 2 , H 2, and the like. In some embodiments, the high-entropy alloy material includes more than four metal elements. These metal elements are the main elements of high-entropy alloy materials and have substantially equal atomic percentages. For example, the atomic percentage of each metal element is in the range of 5 at% to 35 at%. In some embodiments, the metal element of the high-entropy alloy material may include at least four of the group consisting of Ni, Fe, Co, Cr, Al, Ti, Zr, Cu, Mn, and Si. For example, the high-entropy alloy material may be Ni 2 FeCoCrAl x Ti y . x is greater than or equal to 0 and less than or equal to 1.5. y is greater than or equal to 0 and less than or equal to 1.0.
在一些實施例中,氣體霧化裝置100更包括霧化部AP。霧化部AP可連通於融熔部MP。如此一來,融熔態的高熵合金材料可由融熔部MP進入至霧化部AP。在一些實施例中,霧化部AP包括噴嘴NZ。融熔態的高熵合金材料可由融熔部MP輸入至噴嘴NZ,而以流體的形式被噴出。此外,霧化部AP更可包括氣體源GS。氣體源GS可設置於霧化部AP的腔壁上,且用以在霧化部AP內形成高壓氣體流(如靠近噴嘴NZ的箭號所示)。此高壓氣體流可經引導而撞擊由噴嘴NZ噴出的高熵合金流體,而形成微小的 液滴。此些液滴可在霧化部AP內飛行且冷卻,以形成高熵合金粉末。在一些實施例中,氣體源GS的氣體可包括惰性氣體及/或還原氣體。舉例而言,惰性氣體可包括He氣、Ar氣、N2等,而還原氣體可包括H2或其類似者。藉由將惰性氣體及/或還原氣體通入霧化部AP,更可避免高熵合金流體在凝結的過程中被氧化。再者,在一些實施例中,霧化部AP更可包括抽氣系統(省略繪示),經配置以使霧化部AP內維持在真空的環境下。 In some embodiments, the gas atomizing device 100 further includes an atomizing part AP. The atomizing part AP may communicate with the melting part MP. In this way, the molten high-entropy alloy material can enter the atomizing part AP from the melting part MP. In some embodiments, the atomizing portion AP includes a nozzle NZ. The high-entropy alloy material in a molten state can be input to the nozzle NZ from the melting portion MP, and is ejected as a fluid. In addition, the atomizing part AP may further include a gas source GS. The gas source GS can be disposed on the cavity wall of the atomizing part AP, and is used to form a high-pressure gas flow in the atomizing part AP (as shown by the arrow near the nozzle NZ). This high-pressure gas flow can be directed to impinge on the high-entropy alloy fluid ejected from the nozzle NZ to form minute droplets. These droplets can fly and cool inside the atomizing part AP to form a high-entropy alloy powder. In some embodiments, the gas of the gas source GS may include an inert gas and / or a reducing gas. For example, the inert gas may include He gas, Ar gas, N 2 and the like, and the reducing gas may include H 2 or the like. By passing an inert gas and / or a reducing gas into the atomizing part AP, the high-entropy alloy fluid can be more prevented from being oxidized during the condensation process. Furthermore, in some embodiments, the atomizing part AP may further include a suction system (not shown) configured to maintain the inside of the atomizing part AP under a vacuum environment.
在一些實施例中,霧化部AP更可包括粉末收集腔體CB。粉末收集腔體CB可連接於霧化部AP的腔壁,且經配置以收集高熵合金粉末。在一些實施例中,粉末收集腔體CB的數量可為多數,且可設置於霧化部AP的腔壁的不同位置上。一般而言,較靠近噴嘴NZ的粉末收集腔體CB可收集到具有較小粒徑的高熵合金粉末,而較遠離噴嘴NZ的粉末收集腔體CB可收集到具有較大粒徑的高熵合金粉末。以圖1所示的氣體霧化裝置100為例,霧化部AP可包括兩個粉末收集腔體CB,分別設置於霧化部AP的側壁與底部。然而,所屬領域中具有通常知識者可依據製程需求調整粉末收集腔體CB的數量以及配置位置,本發明實施例並不以此為限。此外,在一些實施例中,設置於霧化部AP的側壁的粉末收集腔體CB可連通於氣體源GS,以使霧化部AP內的氣體可回流至氣體源GS。此外,以上述氣體霧化製程所獲得的高熵合金粉末可具有形狀一致與流動性佳等特點。在一些實施例中,高熵合金液體可由約1500℃的高溫急速冷卻至300℃以下的低溫(例 如是100℃至250℃或150℃至250℃),以形成高熵合金粉末。此外,此急速冷卻的時間可在5秒以內。在一些實施例中,基於此急速冷卻的過程,所形成的高熵合金粉末整體可維持在低溫相。換言之,高熵合金粉末實質上為純的低溫相。在其他實施例中,所形成的高熵合金粉末具有低溫相以及微量的高溫相。舉例而言,高溫相的含量比例可小於10%,例如是在0%至5%或0%至3%的範圍中。以高熵合金材料為NiFeCoCrAl為例,低溫相可為體心立方(body-centered cubic,BCC)相,且高溫相可為面心立方(face-centered cubic,FCC)相。 In some embodiments, the atomizing part AP may further include a powder collection cavity CB. The powder collection cavity CB may be connected to the cavity wall of the atomizing part AP and configured to collect high-entropy alloy powder. In some embodiments, the number of the powder collection chambers CB may be a majority, and may be disposed at different positions on the cavity wall of the atomizing portion AP. Generally speaking, the powder collection cavity CB closer to the nozzle NZ can collect high-entropy alloy powder with a smaller particle diameter, and the powder collection cavity CB closer to the nozzle NZ can collect high-entropy with a larger particle diameter Alloy powder. Taking the gas atomizing device 100 shown in FIG. 1 as an example, the atomizing part AP may include two powder collection cavities CB, which are respectively disposed on the side wall and the bottom of the atomizing part AP. However, those with ordinary knowledge in the art can adjust the number and position of the powder collection chambers CB according to the requirements of the process, and the embodiments of the present invention are not limited thereto. In addition, in some embodiments, the powder collection cavity CB disposed on the side wall of the atomizing portion AP may be communicated with the gas source GS, so that the gas in the atomizing portion AP may return to the gas source GS. In addition, the high-entropy alloy powder obtained by the above-mentioned gas atomization process may have the characteristics of uniform shape and good fluidity. In some embodiments, the high-entropy alloy liquid can be rapidly cooled from a high temperature of about 1500 ° C to a low temperature below 300 ° C (for example, (Eg, 100 ° C to 250 ° C or 150 ° C to 250 ° C) to form a high-entropy alloy powder. In addition, the rapid cooling time can be within 5 seconds. In some embodiments, based on this rapid cooling process, the entire high-entropy alloy powder formed can be maintained in a low-temperature phase. In other words, the high-entropy alloy powder is a substantially pure low-temperature phase. In other embodiments, the formed high-entropy alloy powder has a low-temperature phase and a small amount of a high-temperature phase. For example, the content ratio of the high-temperature phase may be less than 10%, for example, in the range of 0% to 5% or 0% to 3%. Taking the high-entropy alloy material as NiFeCoCrAl as an example, the low-temperature phase may be a body-centered cubic (BCC) phase, and the high-temperature phase may be a face-centered cubic (FCC) phase.
高熵合金塗層製造設備10更可包括電漿噴塗(plasma spray)裝置110。由氣體霧化裝置100所得到的高熵合金粉末可進料至電漿噴塗裝置110。此外,電漿噴塗裝置110可加熱高熵合金粉末並將受熱軟化的高熵合金粉末塗布至目標基底TS上。如此一來,可在目標基底TS上形成高熵合金塗層CL。 The high-entropy alloy coating manufacturing apparatus 10 may further include a plasma spray device 110. The high-entropy alloy powder obtained by the gas atomizing device 100 can be fed to the plasma spraying device 110. In addition, the plasma spraying device 110 can heat the high-entropy alloy powder and apply the heat-softened high-entropy alloy powder to the target substrate TS. In this way, a high-entropy alloy coating CL can be formed on the target substrate TS.
在一些實施例中,電漿噴塗裝置110包括用於產生電漿的電極E1與電極E2。電極E1可作為陽極。在一些實施例中,電極E1可經配置為噴嘴狀。在此些實施例中,噴嘴狀的電極E1具有開口P。另一方面,電極E2設置於電極E1的一側,且可作為陰極。用於形成電漿的電漿氣體可自進氣口IN流經電極E1與電極E2之間的區域。在一些實施例中,電漿氣體包括Ar氣與雙原子氣體。舉例而言,雙原子氣體可為H2。位於電極E1與電極E2之間的電漿氣體可被電極E1與電極E2之間的偏壓游離,而形成 電漿。此外,電漿可經由電極E1的開口P處而噴射出,而可形成電漿束(plasma jet)J。在一些實施例中,高熵合金粉末的進料口F可設置於電極E1的開口P附近,而使進料至電漿噴塗裝置110的高熵合金粉末立即受到電漿的加熱。在一些實施例中,受熱的高熵合金粉末可為半融熔態,且隨著電漿的行進路徑而抵達目標基底TS的表面。受熱軟化的高熵合金粉末可堆疊於目標基底TS上,以形成高熵合金塗層CL。在一些實施例中,電漿噴塗裝置110更可包括冷卻系統CS。冷卻系統CS可與電極E1、電極E2熱接觸(thermal contact),以對電極E1、電極E2進行冷卻。在一些實施例中,冷卻系統CS可為水冷系統,但本發明實施例並不以此為限。 In some embodiments, the plasma spraying device 110 includes an electrode E1 and an electrode E2 for generating a plasma. The electrode E1 can serve as an anode. In some embodiments, the electrode E1 may be configured as a nozzle. In these embodiments, the nozzle-shaped electrode E1 has an opening P. On the other hand, the electrode E2 is disposed on one side of the electrode E1 and can serve as a cathode. The plasma gas used to form the plasma may flow from the air inlet IN through a region between the electrode E1 and the electrode E2. In some embodiments, the plasma gas includes Ar gas and diatomic gas. For example, the diatomic gas may be H 2 . The plasma gas between the electrodes E1 and E2 can be released by the bias voltage between the electrodes E1 and E2 to form a plasma. In addition, the plasma may be ejected through the opening P of the electrode E1, and a plasma jet J may be formed. In some embodiments, the feeding port F of the high-entropy alloy powder may be disposed near the opening P of the electrode E1, so that the high-entropy alloy powder fed to the plasma spraying device 110 is immediately heated by the plasma. In some embodiments, the heated high-entropy alloy powder may be in a semi-fused state and reach the surface of the target substrate TS along the path of the plasma. The heat-softened high-entropy alloy powder can be stacked on the target substrate TS to form a high-entropy alloy coating CL. In some embodiments, the plasma spraying device 110 may further include a cooling system CS. The cooling system CS may be in thermal contact with the electrodes E1 and E2 to cool the electrodes E1 and E2. In some embodiments, the cooling system CS may be a water cooling system, but the embodiment of the present invention is not limited thereto.
由於高熵合金粉末受電漿加熱的時間非常短(例如是小於萬分之一秒),所以獲得的高熵合金塗層CL能夠具有均勻的結晶相。在一些實施例中,高熵合金粉末可經篩選再進料至電漿噴塗裝置110。經篩選後,高熵合金粉末的平均粒徑(或稱為D50)可為60μm至90μm。在此些實施例中,高熵合金粉末不易完全受熱,而可保持在低溫相,且仍可保持良好的粉末流動性。如此一來,在一些實施例中,所形成的高熵合金塗層CL整體可實質上為低溫相。在其他實施例中,高熵合金塗層CL包括大部分的低溫相以及微量的高溫相。舉例而言,高熵合金塗層CL中高溫相的含量比例可小於10%,例如是在0%至5%或0%至3%的範圍中。另一方面,當進料至電漿噴塗裝置110的高熵合金粉末的平均粒 徑小於60μm時,有可能經電漿加熱而產生高溫相。此外,當進料至電漿噴塗裝置110的高熵合金粉末的平均粒徑大於90μm時,有可能造成高熵合金粉末的流動性降低,而無法順暢地進料。 Since the high entropy alloy powder is heated by the plasma for a very short time (for example, less than one ten thousandth of a second), the obtained high entropy alloy coating CL can have a uniform crystalline phase. In some embodiments, the high-entropy alloy powder may be screened and fed to the plasma spraying device 110. After screening, the average particle diameter (or D50) of the high-entropy alloy powder can be 60 μm to 90 μm. In these embodiments, the high-entropy alloy powder is not easily heated completely, but can be maintained in a low-temperature phase, and still has good powder flowability. As such, in some embodiments, the entire high-entropy alloy coating CL formed may be substantially a low-temperature phase. In other embodiments, the high-entropy alloy coating CL includes a majority of low-temperature phases and a small amount of high-temperature phases. For example, the content ratio of the high-temperature phase in the high-entropy alloy coating CL may be less than 10%, for example, in the range of 0% to 5% or 0% to 3%. On the other hand, when fed to the plasma spraying device 110, the average grain size of the high-entropy alloy powder is When the diameter is less than 60 μm, a high-temperature phase may be generated by plasma heating. In addition, when the average particle diameter of the high-entropy alloy powder fed to the plasma spraying device 110 is greater than 90 μm, the fluidity of the high-entropy alloy powder may be reduced, and the smooth feeding may not be performed.
在高熵合金材料為NiFeCoCrAl的實施例中,低溫相為BCC相且高溫相為FCC相。相較於FCC相,BCC相具有較少的滑移系統,故具有較高的機械強度(例如是硬度)。此外,BCC相為鐵磁性,且具有較高的飽和磁化量。相較而言,FCC相為順磁性,且具有較低的飽和磁化量。在一些實施例中,高熵合金塗層CL實質上為BCC純相,且可作為加強工件的硬度的功能性塗層或鐵磁性塗層。在此些實施例中,高熵合金塗層CL的硬度範圍為230HV至600HV,例如是238HV至427HV。此外,高熵合金塗層CL的飽和磁化量可在10emu/g至100emu/g的範圍中。 In the embodiment where the high-entropy alloy material is NiFeCoCrAl, the low-temperature phase is a BCC phase and the high-temperature phase is an FCC phase. Compared with the FCC phase, the BCC phase has fewer slip systems and therefore has higher mechanical strength (for example, hardness). In addition, the BCC phase is ferromagnetic and has a high saturation magnetization. In comparison, the FCC phase is paramagnetic and has a low saturation magnetization. In some embodiments, the high-entropy alloy coating CL is substantially a BCC pure phase and can be used as a functional coating or a ferromagnetic coating to enhance the hardness of the workpiece. In these embodiments, the hardness of the high-entropy alloy coating CL ranges from 230 HV to 600 HV, such as 238 HV to 427 HV. In addition, the saturation magnetization of the high-entropy alloy coating CL may be in a range of 10 emu / g to 100 emu / g.
除了篩選高熵合金粉末的粒徑之外,更可藉由調整電漿功率以及電漿氣體流量來輔助控制高熵合金粉末的受熱程度。電漿溫度越高則高熵合金粉末的受熱越完全,也越容易產生高溫相。由此可知,可藉由調整電漿功率以及電漿氣體流量來輔助控制高熵合金塗層CL的結晶相,以使高熵合金塗層CL實質上為純的低溫相。在一些實施例中,電漿功率的範圍可為20kW至55kW。另外,增加Ar氣的流量可提高電漿的溫度,而增加雙原子氣體的流量則可穩定地維持電漿體。在一些實施例中,Ar氣與雙原子氣體的流量比可為34:1至1.5:1。在此些實施例中,Ar的流量範圍可為40slpm至75slpm,而雙原子氣體的流量範圍可為1.5 slpm至9.5slpm。再者,在一些實施例中,更可在噴塗製程中冷卻目標基底TS。如此一來,可進一步地確保高熵合金塗層保持在低溫相。 In addition to screening the particle size of the high-entropy alloy powder, it is also possible to assist in controlling the heating degree of the high-entropy alloy powder by adjusting the plasma power and plasma gas flow. The higher the plasma temperature, the more completely the high-entropy alloy powder is heated, and the easier it is to generate a high-temperature phase. It can be known that the crystalline phase of the high-entropy alloy coating CL can be controlled by adjusting the plasma power and the plasma gas flow rate so that the high-entropy alloy coating CL is substantially a pure low-temperature phase. In some embodiments, the plasma power can range from 20 kW to 55 kW. In addition, increasing the flow rate of Ar gas can increase the temperature of the plasma, while increasing the flow rate of the diatomic gas can stably maintain the plasma. In some embodiments, the flow ratio of the Ar gas to the diatomic gas may be 34: 1 to 1.5: 1. In these embodiments, the flow rate range of Ar can be 40slpm to 75slpm, and the flow rate range of diatomic gas can be 1.5 slpm to 9.5 slpm. Furthermore, in some embodiments, the target substrate TS can be cooled during the spraying process. In this way, it can be further ensured that the high-entropy alloy coating is maintained in a low-temperature phase.
基於上述,本發明實施例藉由氣體霧化製程形成高熵合金粉末,且利用電漿噴塗製程來加熱高熵合金粉末且將受熱的高熵合金粉末噴塗於目標基底上,以形成高熵合金塗層。相較於由塊材磨碎得到的高熵合金粉末,在氣體霧化製程中由液態凝結的高熵合金粉末可具有成分均勻、雜質少、形狀一致與流動性佳等優點。此外,在氣體霧化製程中,液態的高熵合金材料急速冷卻至低溫。因此,所形成的高熵合金粉末可保持在低溫相。另一方面,由於高熵合金粉末在電漿噴塗製程中受電漿加熱的時間非常短,故不易生成高溫相。如此一來,所得到的高熵合金塗層能夠實質上為均勻的低溫相。在一些實施例中,還可藉由篩選高熵合金粉末的粒徑、控制電漿功率、調整電漿氣體流量、冷卻目標基底等方法來確保高熵合金塗層為實質上均勻的低溫相。由此可知,上述高熵合金塗層的製造方法可有效地控制高熵合金塗層的結晶相。如此一來,可更精準地調整高熵合金塗層的各種物理性質。 Based on the above, the embodiment of the present invention forms a high-entropy alloy powder by a gas atomization process, and uses a plasma spraying process to heat the high-entropy alloy powder and spray the heated high-entropy alloy powder on a target substrate to form a high-entropy alloy. coating. Compared with the high-entropy alloy powder obtained by pulverizing the block, the high-entropy alloy powder condensed from the liquid in the gas atomization process can have the advantages of uniform composition, less impurities, uniform shape, and good fluidity. In addition, during the gas atomization process, the liquid high-entropy alloy material is rapidly cooled to a low temperature. Therefore, the formed high-entropy alloy powder can be maintained in a low-temperature phase. On the other hand, since the high entropy alloy powder is heated by the plasma in the plasma spraying process for a very short time, it is difficult to generate a high temperature phase. In this way, the obtained high-entropy alloy coating can be a substantially uniform low-temperature phase. In some embodiments, methods such as screening the particle size of high-entropy alloy powder, controlling plasma power, adjusting plasma gas flow, and cooling the target substrate can be used to ensure that the high-entropy alloy coating is a substantially uniform low-temperature phase. Therefore, it can be known that the above-mentioned manufacturing method of the high-entropy alloy coating can effectively control the crystalline phase of the high-entropy alloy coating. In this way, various physical properties of the high-entropy alloy coating can be adjusted more accurately.
以下,藉由實驗例1至實驗例7來驗證本發明實施例的功效。 In the following, the effects of the embodiments of the present invention are verified by Experimental Examples 1 to 7.
請參照圖1,在氣體霧化裝置100的融熔部MP內將純度 為99.95%的Al、Co、Cr、Fe、Ni的金屬塊(Alfa Aesar公司製造)融熔且實質上等比例地混合,以形成融熔態的高熵合金材料。融熔部MP保持在Ar氣環境下,且在融熔與混合的過程中以震動的方式對融熔態的高熵合金材料進行攪動。融熔態的高熵合金材料接著進入霧化部AP,而以流體的形式從噴嘴NZ噴出。高熵合金流體受到高壓氣體流的撞擊而形成為小的液滴。此些液滴在霧化部AP內飛行且急速冷卻而固化。如此一來,形成高熵合金粉末。接著,篩選高熵合金粉末,以取出具有特定平均粒徑範圍的高熵合金粉末。 Referring to FIG. 1, the purity is set in the melting section MP of the gas atomizing device 100. A metal block (manufactured by Alfa Aesar) of 99.95% Al, Co, Cr, Fe, and Ni is melted and mixed in substantially equal proportions to form a molten high-entropy alloy material. The melting part MP is maintained in an Ar gas environment, and the molten high-entropy alloy material is stirred in a vibration manner during the melting and mixing process. The molten high-entropy alloy material then enters the atomizing part AP and is ejected from the nozzle NZ as a fluid. High-entropy alloy fluids are impacted by high-pressure gas streams to form small droplets. These droplets fly within the atomizing part AP and are rapidly cooled to solidify. In this way, a high-entropy alloy powder is formed. Next, the high-entropy alloy powder is screened to take out the high-entropy alloy powder having a specific average particle size range.
接著,將篩選出的高熵合金粉末以N2作為載氣而輸入至電漿噴塗裝置110。高熵合金粉末的輸送速率約為30g/min。此外,提供目標基底TS。目標基底TS為304不鏽鋼板(304 stainless steel plate),且在電漿噴塗製程之前經噴砂處理與清洗。電漿噴塗裝置110的包括電極E1、電極E2的電漿產生裝置安裝於機械手臂(未繪示),以控制噴塗距離以及噴塗角度。在噴塗製程中,可移動目標基底TS,而以掃描的方式進行噴塗。具體而言,在每一掃描週期中,可沿列方向移動目標基底。接著,可沿行方向移動目標基底(約140mm)以進行下一掃描週期。電漿氣體包括Ar氣與H2。在電漿噴塗製程中,藉由空氣噴射器(air jet)對目標基底TS進行冷卻,且移除無法良好地附著至目標基底TS上的高熵合金粉末及/或未經受熱軟化的高熵合金粉末。於目標基底TS上所形成的 高熵合金塗層CL的厚度是以電漿噴塗次數來計算。在以下實驗例中,進行10次電漿噴塗製程,故所形成的高熵合金塗層CL之厚度約為150μm至200μm。 Next, the screened high-entropy alloy powder is input to the plasma spraying apparatus 110 using N 2 as a carrier gas. The conveying rate of the high-entropy alloy powder is about 30 g / min. In addition, a target substrate TS is provided. The target substrate TS is a 304 stainless steel plate, and is sandblasted and cleaned before the plasma spraying process. The plasma spraying device 110 includes a plasma generating device including an electrode E1 and an electrode E2 installed on a robot arm (not shown) to control a spraying distance and a spraying angle. In the spraying process, the target substrate TS can be moved and sprayed in a scanning manner. Specifically, the target substrate may be moved in the column direction in each scanning cycle. Then, the target substrate (about 140 mm) can be moved in the row direction for the next scanning cycle. Plasma gas includes Ar gas and H 2 . In the plasma spraying process, the target substrate TS is cooled by an air jet, and the high-entropy alloy powder that does not adhere well to the target substrate TS and / or the high-entropy that is not softened by heat is removed. Alloy powder. The thickness of the high-entropy alloy coating layer CL formed on the target substrate TS is calculated by the number of plasma spraying. In the following experimental example, the plasma spraying process is performed 10 times, so the thickness of the high-entropy alloy coating CL formed is about 150 μm to 200 μm.
下表1整理實驗例1至實驗例7的高熵合金粉末的平均粒徑範圍以及各項電漿製程參數。 The following Table 1 summarizes the average particle size range of high-entropy alloy powders from Experimental Examples 1 to 7, and various plasma process parameters.
以掛載能量分散光譜儀(energy dispersive spectrometer,EDS)設備的掃描式電子顯微鏡(JEOL公司所生產的JSM6500F(商品名))觀察用於實驗例1至實驗例7的高熵合金粉末的外觀與成分。此外,藉由Scintag公司所生產的XDS2000(商品名)X光繞射儀對用於實驗例1至實驗例7的高熵合金粉末進行結晶相 的分析。具體而言,X光繞射分析是使用Cu Kα輻射,且在室溫下進行。再者,藉由使用由Quantum Design公司所製造的磁性量測系統(meganetic property measurement system,MPMS)在溫度區間10K至400K內以及施加磁場範圍在0T至7T以內對用於實驗例1至實驗例7的高熵合金粉末進行磁性分析。 The appearance and composition of the high-entropy alloy powders used in Experimental Examples 1 to 7 were observed with a scanning electron microscope (JSM6500F (trade name) produced by JEOL) using an energy dispersive spectrometer (EDS) device. . In addition, the high-entropy alloy powders used in Experimental Examples 1 to 7 were subjected to a crystalline phase by an XDS2000 (trade name) X-ray diffractometer produced by Scintag. Analysis. Specifically, the X-ray diffraction analysis was performed using Cu Kα radiation and performed at room temperature. In addition, by using a magnetic property measurement system (MPMS) manufactured by Quantum Design in a temperature range of 10K to 400K and an applied magnetic field range of 0T to 7T, it is used for Experimental Examples 1 to Experimental Examples. The high-entropy alloy powder of 7 was subjected to magnetic analysis.
圖2A是實驗例1至實驗例4的高熵合金粉末的掃描式電子顯微鏡影像。圖2B是實驗例6、實驗例7的高熵合金粉末的掃描式電子顯微鏡影像。 FIG. 2A is a scanning electron microscope image of the high-entropy alloy powder of Experimental Examples 1 to 4. FIG. FIG. 2B is a scanning electron microscope image of the high-entropy alloy powder of Experimental Examples 6 and 7. FIG.
請參照圖2A與圖2B,用於實驗例1-4、6、7的高熵合金粉末的外形一致,且實質上為球形。此外,由圖2B可知,經粒徑篩選為60μm至90μm的高熵合金粉末(實驗例6、7)亦實質上為球形。此外,且相較於圖2A,圖2B所示的粉末粒徑更為一致。另一方面,儘管未提供實驗例5的高熵合金粉末的影像,但實驗例5所使用的高熵合金粉末即為用於實驗例1-4的高熵合金粉末與用於實驗例6、7的高熵合金粉末的混合。由此可知,用於實驗例5的高熵合金粉末也可具有一致的外形(球形)。此外,下表二為能量分散光譜儀對用於實驗例6、7的高熵合金粉末所測得的成分比例。 Please refer to FIG. 2A and FIG. 2B. The high-entropy alloy powders used in Experimental Examples 1-4, 6, and 7 have the same shape and are substantially spherical. In addition, as can be seen from FIG. 2B, the high-entropy alloy powder (Experimental Examples 6 and 7) having a particle size of 60 μm to 90 μm was also substantially spherical. In addition, compared with FIG. 2A, the particle size of the powder shown in FIG. 2B is more consistent. On the other hand, although the image of the high-entropy alloy powder of Experimental Example 5 is not provided, the high-entropy alloy powder used in Experimental Example 5 is the high-entropy alloy powder used in Experimental Examples 1-4 and the experimental example 6, Mixing of 7 high entropy alloy powder. From this, it can be seen that the high-entropy alloy powder used in Experimental Example 5 can also have a uniform outer shape (spherical shape). In addition, Table 2 below shows the composition ratios of the energy dispersive spectrometers to the high-entropy alloy powders used in Experimental Examples 6 and 7.
請參照上表2,各元素的含量大致相同,而皆可作為高熵合金的主要元素。 Please refer to Table 2 above. The content of each element is roughly the same, and they can all be used as the main elements of high-entropy alloys.
圖3是用於實驗例1至實驗例7的高熵合金粉末的X光繞射圖譜。 FIG. 3 is an X-ray diffraction pattern of the high-entropy alloy powder used in Experimental Examples 1 to 7. FIG.
請參照圖3,資料線DA至資料線DG為未經粒徑篩選的高熵合金粉末的X光繞射圖譜。資料線DA所代表的高熵合金粉末未經退火處理。資料線DB、資料線DC、資料線DD、資料線DE、資料線DF以及資料線DG分別代表經500℃、600℃、700℃、800℃、900℃以及1000℃退火處理48小時的高熵合金粉末。特徵峰CP1代表BCC相,且特徵峰CP2代表FCC相。由資料線DA至資料線DG可觀察出,需要將退火溫度提高至600℃以上方可產生FCC相,且FCC相的特徵峰(亦即特徵峰CP2)的強度隨退火溫度的提升而提高。另一方面,未經退火處理以及經500℃退火處理的高熵合金粉末實質上為BCC純相。由此可知,由本發明實施例的氣體霧化製程所得到的高熵合金粉末可為BCC純相。需注意的是,在實驗例1至實驗例7中,進料至電漿噴塗裝置的高熵合金粉末皆未經退火處理,亦即皆為資料線DA所示的BCC純相。 Please refer to FIG. 3, data lines DA to DG are X-ray diffraction patterns of high-entropy alloy powder without particle size screening. The high-entropy alloy powder represented by data line DA is not annealed. Data line DB, data line DC, data line DD, data line DE, data line DF, and data line DG represent high entropy after annealing at 500 ° C, 600 ° C, 700 ° C, 800 ° C, 900 ° C, and 1000 ° C for 48 hours, respectively. Alloy powder. The characteristic peak CP1 represents the BCC phase, and the characteristic peak CP2 represents the FCC phase. From the data line DA to the data line DG, it can be observed that the FCC phase needs to be generated by increasing the annealing temperature above 600 ° C, and the intensity of the characteristic peak of the FCC phase (that is, the characteristic peak CP2) increases as the annealing temperature increases. On the other hand, the high-entropy alloy powder that is not annealed and annealed at 500 ° C is essentially a BCC pure phase. Therefore, it can be known that the high-entropy alloy powder obtained by the gas atomization process according to the embodiment of the present invention can be a BCC pure phase. It should be noted that in Experimental Examples 1 to 7, the high-entropy alloy powders fed to the plasma spraying device were not annealed, that is, they were all BCC pure phases shown by data line DA.
圖4為用於實驗例1至實驗例7的高熵合金粉末的飽和磁化量對磁場強度的作圖。 FIG. 4 is a plot of the saturation magnetization of the high-entropy alloy powders used in Experimental Example 1 to Experimental Example 7 with respect to the magnetic field strength.
請參照圖4,資料線DH至資料線DK為未經粒徑篩選的高熵合金粉末的飽和磁化量對磁場強度的圖譜。資料線DH所代表的高熵合金粉末未經退火處理。資料線DI、資料線DJ與資料線DK分別代表經500℃、1000℃以及1200℃退火處理的高熵合金粉末。由資料線DH至資料線DK可觀察出,隨著退火溫度的提高,飽和磁化量先提高而後逐漸下降。具體而言,在退火溫度低於500℃時,飽和磁化量隨著退火溫度提高而增加。在退火溫度高於500℃時,飽和磁化量隨著退火溫度提高而降低。由此可知,高熵合金粉末在退火溫度達到約500℃之前屬於鐵磁性,而在退火溫度高於約500℃時屬於順磁性。合併圖3與圖4的結果可推知,此鐵磁性與順磁性之間的轉換應來自於BCC相與FCC相之間的轉換。換言之,BCC相屬於鐵磁性,而FCC相屬於順磁性。 Please refer to FIG. 4, the data line DH to the data line DK are the spectra of the saturation magnetization versus magnetic field strength of the high-entropy alloy powder without particle size screening. The high-entropy alloy powder represented by the data line DH is not annealed. Data line DI, data line DJ, and data line DK respectively represent high-entropy alloy powders that have been annealed at 500 ° C, 1000 ° C, and 1200 ° C. From the data line DH to the data line DK, it can be observed that as the annealing temperature increases, the saturation magnetization increases first and then gradually decreases. Specifically, when the annealing temperature is less than 500 ° C, the saturation magnetization amount increases as the annealing temperature increases. When the annealing temperature is higher than 500 ° C, the saturation magnetization decreases as the annealing temperature increases. It can be seen that the high-entropy alloy powder is ferromagnetic before the annealing temperature reaches about 500 ° C, and it is paramagnetic when the annealing temperature is higher than about 500 ° C. Combining the results of Fig. 3 and Fig. 4 can be inferred that the transition between ferromagnetic and paramagnetic should come from the transition between BCC phase and FCC phase. In other words, the BCC phase is ferromagnetic and the FCC phase is paramagnetic.
藉由Scintag公司所生產的XDS2000(商品名)X光繞射儀對高熵合金塗層CL進行結晶相的分析。具體而言,X光繞射分析是使用Cu Kα輻射,且在室溫下進行。此外,以維氏硬度儀在荷重300克下對高熵合金塗層進行硬度的分析。 The crystal phase of the high-entropy alloy coating CL was analyzed by an XDS2000 (trade name) X-ray diffractometer produced by Scintag. Specifically, the X-ray diffraction analysis was performed using Cu Kα radiation and performed at room temperature. In addition, the hardness of the high-entropy alloy coating was analyzed with a Vickers hardness tester under a load of 300 grams.
圖5是實驗例1至實驗例7的高熵合金塗層的X光繞射圖譜。 FIG. 5 is X-ray diffraction patterns of the high-entropy alloy coatings of Experimental Examples 1 to 7. FIG.
請參照圖5,資料線DL至資料線DR分別代表實驗例1 至實驗例7的高熵合金塗層CL的X光繞射圖譜。用於形成實驗例1至實驗例7的高熵合金粉末皆未經退火處理,亦即均保持BCC純相(如圖3的資料線DA所示)以及鐵磁性。由資料線DL、資料線DM、資料線DN、資料線DO以及資料線DP可觀察出進料至電漿噴塗裝置的高熵合金粉末的粒徑在10μm至60μm的範圍或10μm至90μm的範圍內時,所形成的高熵合金塗層皆為包含FCC相與BCC相的混相(同時出現特徵峰CP1與特徵峰CP2)。此外,FCC相的含量(亦即特徵峰CP2的強度)隨著電漿功率與Ar氣流量提高而增加。另一方面,由資料線DQ、DR可觀察出進料至電漿噴塗裝置的高熵合金粉末的粒徑在60μm至90μm的範圍內時,所形成的高熵合金塗層可保持在BCC純相(僅出現特徵峰CP1)。即使資料線DQ、DR所對應到的實驗例6、7相較於其他實驗例使用較高的電漿功率以及Ar氣流量,仍未觀察到FCC相(亦即特徵峰CP2)。由此可知,進料至電漿噴塗裝置的高熵合金粉末之粒徑是決定高熵合金塗層是否保持為BCC純相的關鍵因素之一。 Please refer to FIG. 5, the data lines DL to DR respectively represent the experimental example 1 X-ray diffraction pattern of the high-entropy alloy coating CL to Experimental Example 7. The high-entropy alloy powders used to form Experimental Examples 1 to 7 are not annealed, that is, they all maintain the BCC pure phase (as shown by the data line DA in FIG. 3) and ferromagnetism. From the data line DL, data line DM, data line DN, data line DO, and data line DP, the particle diameter of the high-entropy alloy powder fed to the plasma spraying device can be observed in the range of 10 μm to 60 μm or in the range of 10 μm to 90 μm. In the internal phase, the formed high-entropy alloy coatings are all mixed phases including FCC phase and BCC phase (characteristic peak CP1 and characteristic peak CP2 appear at the same time). In addition, the content of the FCC phase (ie, the intensity of the characteristic peak CP2) increases as the plasma power and the Ar gas flow rate increase. On the other hand, from the data lines DQ and DR, it can be observed that when the particle diameter of the high-entropy alloy powder fed to the plasma spraying device is in the range of 60 μm to 90 μm, the formed high-entropy alloy coating can be maintained in BCC purity. Phase (only characteristic peak CP1 appears). Even if data lines DQ and DR correspond to experimental examples 6 and 7 using higher plasma power and Ar gas flow rate than other experimental examples, no FCC phase (ie, characteristic peak CP2) was observed. It can be known from this that the particle size of the high-entropy alloy powder fed to the plasma spraying device is one of the key factors determining whether the high-entropy alloy coating remains as a BCC pure phase.
下表三整理實驗例1至實驗例7的高熵合金塗層的硬度。 The following table III summarizes the hardness of the high-entropy alloy coatings of Experimental Examples 1 to 7.
請參照圖5與上表3,相較於實驗例1-5,實驗例6、7的高熵合金塗層表現出明顯較高的硬度。此結果與圖5合併比對可知,相較於高熵合金塗層為FCC相與BCC相混相,高熵合金塗層實質上為BCC純相時可具有更高的硬度。 Please refer to FIG. 5 and Table 3 above. Compared with Experimental Examples 1-5, the high entropy alloy coatings of Experimental Examples 6 and 7 show significantly higher hardness. This result is compared with FIG. 5 to show that the high entropy alloy coating can have substantially higher hardness when the high entropy alloy coating is a pure BCC phase, compared to the FCC phase and the BCC phase of the high entropy alloy coating.
綜觀以上實驗結果,可得知高熵合金粉末的粒徑在特定範圍時,且搭配電漿製程條件的控制,可調控所形成的高熵合金塗層的結晶相。如此一來,可控制所得的高熵合金塗層的物理特性,例如是硬度與磁性等。 Looking at the above experimental results, it can be known that when the particle size of the high-entropy alloy powder is in a specific range, and with the control of the plasma process conditions, the crystal phase of the high-entropy alloy coating formed can be adjusted. In this way, the physical properties of the obtained high-entropy alloy coating can be controlled, such as hardness and magnetic properties.
綜上所述,本發明實施例藉由氣體霧化製程形成高熵合金粉末,且利用電漿噴塗製程來加熱高熵合金粉末且將受熱的高熵合金粉末噴塗於目標基底上,以形成高熵合金塗層。相較於由塊材磨碎得到的高熵合金粉末,在氣體霧化製程中由液態凝結的高熵合金粉末可具有成分均勻、雜質少、形狀一致與流動性佳等優點。此外,在氣體霧化製程中,液態的高熵合金材料急速冷卻至低溫。因此,所形成的高熵合金粉末可保持在低溫相。另一方面,由於高熵合金粉末在電漿噴塗製程中受電漿加熱的時間非常 短,故不易生成高溫相。如此一來,所得到的高熵合金塗層能夠實質上為均勻的低溫相。在一些實施例中,還可藉由篩選高熵合金粉末的粒徑、控制電漿功率、調整電漿氣體流量、冷卻目標基底等方法來確保高熵合金塗層為實質上均勻的低溫相。由此可知,上述高熵合金塗層的製造方法可有效地控制高熵合金塗層的結晶相。如此一來,可更精準地調整高熵合金塗層的各種物理性質。 In summary, the embodiment of the present invention forms a high-entropy alloy powder by a gas atomization process, and uses a plasma spraying process to heat the high-entropy alloy powder and spray the heated high-entropy alloy powder on a target substrate to form a high Entropy alloy coating. Compared with the high-entropy alloy powder obtained by pulverizing the block, the high-entropy alloy powder condensed from the liquid in the gas atomization process can have the advantages of uniform composition, less impurities, uniform shape, and good fluidity. In addition, during the gas atomization process, the liquid high-entropy alloy material is rapidly cooled to a low temperature. Therefore, the formed high-entropy alloy powder can be maintained in a low-temperature phase. On the other hand, the high entropy alloy powder is heated by the plasma during the plasma spraying process for a very long time. Short, it is not easy to generate high temperature phase. In this way, the obtained high-entropy alloy coating can be a substantially uniform low-temperature phase. In some embodiments, methods such as screening the particle size of high-entropy alloy powder, controlling plasma power, adjusting plasma gas flow, and cooling the target substrate can be used to ensure that the high-entropy alloy coating is a substantially uniform low-temperature phase. Therefore, it can be known that the above-mentioned manufacturing method of the high-entropy alloy coating can effectively control the crystalline phase of the high-entropy alloy coating. In this way, various physical properties of the high-entropy alloy coating can be adjusted more accurately.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
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CN118272713A (en) * | 2024-04-01 | 2024-07-02 | 上海骐碳复合材料科技有限公司 | High-entropy alloy powder, coating for brake disc and preparation method of coating |
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