US20020025595A1 - MEMS variable capacitor with stabilized electrostatic drive and method therefor - Google Patents
MEMS variable capacitor with stabilized electrostatic drive and method therefor Download PDFInfo
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- US20020025595A1 US20020025595A1 US09/981,014 US98101401A US2002025595A1 US 20020025595 A1 US20020025595 A1 US 20020025595A1 US 98101401 A US98101401 A US 98101401A US 2002025595 A1 US2002025595 A1 US 2002025595A1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims 3
- 239000012528 membrane Substances 0.000 claims description 51
- 238000006073 displacement reaction Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 6
- 239000012811 non-conductive material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 5
- 230000000694 effects Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
Definitions
- This invention relates, in general, to micro electro-mechanical system (MEMS) devices and, more particularly, to a high quality (high-Q) variable capacitor fabricated using MEMS technology.
- MEMS micro electro-mechanical system
- FIG. 1 One prior art type of variable capacitor, known as the thermal drive variable capacitor 10 , is illustrated in FIG. 1.
- a dielectric gap 11 between two capacitor plates 12 and 13 is controlled or altered by means of thermal expansion of lateral components.
- each end of an upper plate 12 of a capacitor is connected to one end of a movable, hinged diagonal component 15 .
- the other end of the diagonal component is connected to a lateral component 14 .
- Movement of lateral component 14 which is controlled by thermal devices, causes the hinged diagonal components 15 to translate the lateral movement to vertical movement of upper plate 12 .
- the vertical movement of upper plate 12 varies the capacitance of the device.
- thermal drive variable capacitor 10 The drawbacks to thermal drive variable capacitor 10 are several.
- the mechanical design of the device is complicated resulting in a costly and inefficient manufacturing process.
- the complicated design of the thermal drive negatively impacts the reliability of the device.
- the translation of lateral movement to vertical movement intrinsic to thermal drive devices has the negative effect of increasing the size of the device.
- the thermal expansion and contraction operation of the device is inefficient, thus resulting in slow speed in varying the capacitance.
- thermal operation requires significantly more power consumption than electrostatically driven MEMS devices of similar capability.
- MEMS variable capacitor 20 has at least one driver 21 , itself a simple variable capacitor, for determining the displacement of a dielectric membrane 22 and a variable capacitor region for employment with an external circuit (not shown).
- the displacement of dielectric membrane 22 is determined by the application of a voltage potential across drivers 21 .
- FIG. 1 is a simplified cross-sectional view of a prior art thermal drive variable capacitor
- FIG. 2 is a cross-sectional view of another prior art MEMS variable capacitor
- FIG. 3 is a chart comparing actuation voltage potential with displacement of a membrane for forward and reverse bias of prior art MEMS variable capacitors
- FIG. 4 is a schematic diagram of the driver portion of a MEMS variable capacitor in accordance with an embodiment of the present invention.
- FIGS. 5 - 8 are charts which illustrate the dynamic response of the MEMS variable capacitor of FIG. 4;
- FIG. 9 is a cross-sectional view of a MEMS variable capacitor in accordance with another embodiment of the present invention.
- FIG. 10 is a cross-sectional view of a MEMS variable capacitor in accordance with yet another embodiment of the present invention.
- FIG. 11 is a chart comparing actuation voltage potential with displacement of the membrane for forward and reverse bias for a MEMS capacitor in accordance with an embodiment of the present invention.
- the restoring force is a mechanical force that tends to return the dielectric membrane to its initial or rest position, i.e., the position of the membrane with no voltage potential across the control electrodes.
- the restoring force causes the dielectric membrane displacement to increase as the dielectric membrane returns to its initial position, thereby varying the capacitance of the MEMS variable capacitor.
- d is the dielectric membrane displacement
- g 0 is the effective gap between the lower surface of the dielectric membrane and the upper surface of the lower electrode
- g 1 is the thickness of the dielectric membrane
- ⁇ is the dielectric constant
- the snap effect results in a device with a poor noise margin. That is, voltage spikes will cause the membrane to clamp.
- the prior art MEMS variable capacitor is typically employed as a bi-stable device, rather than as a true variable capacitor that is controllable over a continuum of capacitances.
- FIG. 4 a schematic diagram of an electrostatic driver portion 30 of a MEMS variable capacitor in accordance with an embodiment of the present invention is shown.
- the electrostatic driver essentially combines a fixed capacitor C 1 in series with a variable capacitor C v . Both C 1 and C v are fabricated in the same monolithic, integrated device.
- the addition of C 1 alters equation (1) by introducing the ratio of C v (which equals C 0 , the initial drive capacitance at zero voltage) to C 1 and the stable condition becomes:
- FIGS. 5 - 8 illustrate the dynamic response of the circuit at several different values of C 0 /C 1 .
- MEMS variable capacitor 99 with stabilized electrostatic drive 100 is comprised of at least one driver capacitor pair 120 having a driver fixed capacitor 121 in series with a driver variable capacitor 126 .
- FIG. 6 illustrates MEMS variable capacitor 99 with an electrostatic driver comprised of a single driver capacitor pair 120 .
- MEMS variable capacitor 100 also has a variable capacitor 130 that connects to the remainder of the circuit (not shown).
- Variable capacitor 130 is comprised of a lower plate 131 , an upper plate 132 , and a portion of a dielectric membrane 140 .
- Dielectric membrane 140 displaces vertically, as shown by the bold arrow, in response to the application of an actuation voltage potential to driver capacitor pair 120 , thereby varying the capacitance of variable capacitor 130 .
- MEMS variable capacitor 99 with stabilized electrostatic drive 100 is fabricated beginning with a substrate 110 , preferably a non-conductive substrate.
- a substrate 110 preferably a non-conductive substrate.
- an isolation layer of non-conductive material 111 such as silicon oxide or silicon nitride, is deposited on substrate 110 to facilitate the manufacturing process.
- a metal layer is deposited to form a lower electrode 122 of driver fixed capacitor 121 on the isolation layer.
- the metal layer may be deposited directly on substrate 110 .
- Lower electrode 122 of driver fixed capacitor 121 is connected to the remainder of the actuation circuit by any number of conventional means such as a metal trace.
- isolation layer of non-conductive material 112 is fabricated over isolation layer 111 and lower electrode 122 of driver fixed capacitor 121 .
- the lower electrode 122 of fixed capacitor 121 is electrically isolated from the remainder of the device.
- another metal layer is deposited on an upper surface of second isolation layer 112 to form lower plate 131 for variable capacitor 130 and a dual-use electrode 125 .
- Dual-use electrode 125 serves as the upper electrode of driver fixed capacitor 121 and the lower electrode of the driver variable capacitor 126 .
- Subsequent steps include the formation of a sacrificial layer (not shown), i.e., a temporary layer used to establish the effective gap go between dielectric membrane 140 and dual use electrode 125 , the formation of an anchor post 150 from which dielectric membrane 140 is suspended, the formation of dielectric membrane 140 and the deposition of another metal layer on the upper surface of dielectric membrane 140 , which forms upper plate 132 of variable capacitor 130 , and an upper electrode 127 of driver variable capacitor 126 .
- a sacrificial layer not shown
- dielectric membrane 140 is free to displace vertically in response to the application of the actuation voltage.
- the offset may be varied or even eliminated, depending on the application of the device.
- MEMS variable capacitor 101 with stabilized electrostatic drive in accordance with another embodiment is illustrated.
- MEMS variable capacitor 101 includes a substrate 110 and isolation layers 111 and 112 , as in the previous embodiment.
- MEMS variable capacitor 101 is comprised of two driver capacitor pairs 120 .
- Each of the driver capacitor pair 120 is comprised of a driver fixed capacitor 121 and a driver variable capacitor 126 .
- Driver fixed capacitor 121 is comprised of a lower electrode 122 and a dual-use electrode 125 .
- the driver variable capacitor is comprised of dual-use electrode 125 and an upper electrode 127 .
- dual-use electrode 125 serves as the upper electrode of driver fixed capacitor 121 and the lower electrode of driver variable capacitor 126 .
- Each end of dielectric membrane 140 is connected to an anchor 150 .
- Variable capacitor 130 comprising a lower plate 131 , an upper plate 132 and a portion of dielectric membrane 140 , is located in the approximate center of dielectric membrane 140 .
- the actuation voltage is simultaneously applied to each of the driver capacitor pairs 120 to control the deflection of dielectric membrane 140 .
- FIG. 11 is a chart 200 comparing actuation voltage potential with displacement of the membrane for forward and reverse bias for a MEMS capacitor in accordance with an embodiment of the present invention.
- Chart 200 is a plot of actuation voltage versus displacement for a typical device. Note that the forward bias curve is virtually identical to the reverse bias curve. The snap effect is effectively eliminated and there is no abrupt hysteresis as was common in prior art devices.
Abstract
Description
- This invention relates, in general, to micro electro-mechanical system (MEMS) devices and, more particularly, to a high quality (high-Q) variable capacitor fabricated using MEMS technology.
- One prior art type of variable capacitor, known as the thermal
drive variable capacitor 10, is illustrated in FIG. 1. In this prior art version, adielectric gap 11 between twocapacitor plates upper plate 12 of a capacitor is connected to one end of a movable, hingeddiagonal component 15. The other end of the diagonal component is connected to alateral component 14. Movement oflateral component 14, which is controlled by thermal devices, causes the hingeddiagonal components 15 to translate the lateral movement to vertical movement ofupper plate 12. The vertical movement ofupper plate 12 varies the capacitance of the device. - The drawbacks to thermal
drive variable capacitor 10 are several. The mechanical design of the device is complicated resulting in a costly and inefficient manufacturing process. Also, the complicated design of the thermal drive negatively impacts the reliability of the device. The translation of lateral movement to vertical movement intrinsic to thermal drive devices has the negative effect of increasing the size of the device. Also, the thermal expansion and contraction operation of the device is inefficient, thus resulting in slow speed in varying the capacitance. Furthermore, thermal operation requires significantly more power consumption than electrostatically driven MEMS devices of similar capability. - Another prior
art variable capacitor 20 is illustrated in FIG. 2.MEMS variable capacitor 20 has at least onedriver 21, itself a simple variable capacitor, for determining the displacement of adielectric membrane 22 and a variable capacitor region for employment with an external circuit (not shown). The displacement ofdielectric membrane 22 is determined by the application of a voltage potential acrossdrivers 21. - The application of a voltage to the drivers causes an electrostatic attraction between the driver electrodes. This electrostatic attraction results in a downward movement of
dielectric membrane 22, thereby causing a downward displacement. This reduction in the gap between the upper 23 and lower 24 capacitor plates results in a corresponding variance in capacitance. - Hence, a need exists for a high-Q capacitor that is reliable, cost efficient, and has continuous dynamic response over the full displacement of the dielectric membrane.
- FIG. 1 is a simplified cross-sectional view of a prior art thermal drive variable capacitor;
- FIG. 2 is a cross-sectional view of another prior art MEMS variable capacitor;
- FIG. 3 is a chart comparing actuation voltage potential with displacement of a membrane for forward and reverse bias of prior art MEMS variable capacitors;
- FIG. 4 is a schematic diagram of the driver portion of a MEMS variable capacitor in accordance with an embodiment of the present invention;
- FIGS.5-8 are charts which illustrate the dynamic response of the MEMS variable capacitor of FIG. 4;
- FIG. 9 is a cross-sectional view of a MEMS variable capacitor in accordance with another embodiment of the present invention;
- FIG. 10 is a cross-sectional view of a MEMS variable capacitor in accordance with yet another embodiment of the present invention; and
- FIG. 11 is a chart comparing actuation voltage potential with displacement of the membrane for forward and reverse bias for a MEMS capacitor in accordance with an embodiment of the present invention.
- One of the forces intrinsic to MEMS variable capacitors with electrostatic drive is the restoring force. The restoring force is a mechanical force that tends to return the dielectric membrane to its initial or rest position, i.e., the position of the membrane with no voltage potential across the control electrodes. When the voltage potential across the driver electrodes is lessened or removed, the restoring force causes the dielectric membrane displacement to increase as the dielectric membrane returns to its initial position, thereby varying the capacitance of the MEMS variable capacitor.
- One of the limitations of the prior art MEMS variable capacitor shown in FIG. 2, is reflected in the relationship between the restoring force FR and the electrostatic force FES. The restoring force FR for the dielectric membrane is linear with respect to the displacement. However, the electrostatic force FES is inversely proportional to the square the difference between the original gap and the displacement. Therefore, as the actuation voltage increases, causing further displacement of the dielectric membrane, FES dominates over FR which results in the dielectric membrane clamping in the closed or fully displaced position. This is known as the “pull-in” or “snap effect” and as the graph in FIG. 3 illustrates, the result is a two-state or bi-stable capacitor. Furthermore, when the actuation voltage is reduced, the membrane will remain fully deflected until FR can dominate FES. Thus, an abrupt form of hysteresis is evident in the prior art MEMS variable capacitor as shown in FIG. 3. In addition, the prior art MEMS variable capacitor exhibits poor noise margins because of the above limitations.
- Other limitations of the prior art MEMS variable capacitor follow from the snap effect. For example, in most applications any capacitor variability is limited to approximately one third of the sum of the available dielectric membrane deflection plus the thickness of the dielectric membrane divided by the dielectric constant, as shown in the following equation:
- d=(g 0 +g 1/∈)/3 (1)
- where:
- d is the dielectric membrane displacement;
- g0 is the effective gap between the lower surface of the dielectric membrane and the upper surface of the lower electrode;
- g1 is the thickness of the dielectric membrane; and
- ∈ is the dielectric constant.
- Therefore, precise actuation voltage control is required, particularly near the pull-in point, i.e., the point on the curve where the membrane will clamp, which is shown in FIG. 3 as approximately one third of the available displacement.
- Furthermore, the snap effect results in a device with a poor noise margin. That is, voltage spikes will cause the membrane to clamp. Thus, as a practical matter, the prior art MEMS variable capacitor is typically employed as a bi-stable device, rather than as a true variable capacitor that is controllable over a continuum of capacitances.
- Now referring to FIG. 4, a schematic diagram of an
electrostatic driver portion 30 of a MEMS variable capacitor in accordance with an embodiment of the present invention is shown. The electrostatic driver essentially combines a fixed capacitor C1 in series with a variable capacitor Cv. Both C1 and Cv are fabricated in the same monolithic, integrated device. The addition of C1 alters equation (1) by introducing the ratio of Cv (which equals C0, the initial drive capacitance at zero voltage) to C1 and the stable condition becomes: - d=(g 0 +g 1/∈)*(1+C 0 /C 1)/3 (2)
- The inclusion of the C1, and thus the term (1+C0/C1), increases the effective displacement range of the dielectric membrane for controlling the variable capacitance. Furthermore, the system is stable in the full deflection range if the following condition is satisfied:
- C 0 /C 1≧(2−g 1 /∈*g 0)/(1+g 1 /∈g 0) (3)
- Thus, the device is stable over the entire operating range if C0/C1 is greater than or equal to approximately 2. FIGS. 5-8 illustrate the dynamic response of the circuit at several different values of C0/C1. The exemplary values for the other relevant parameters (g0, g1, and ∈) for the purposes of FIGS. 5-8 are g0=2 μm, g1=1 μm, and ∈=3.9. Note that for the ratio of C0/C1=0 (FIG. 5), i.e., only one capacitor, the snap effect occurs at approximately 10 volts and only approximately one third of the displacement is useable. When C0/C1=1 (FIG. 6), approximately 60 percent (1.2/2) of the displacement is useable. For C0/C1=1.5 (FIG. 7), approximately 90 percent (1.8/2) of the displacement is useable. And for C0/C1=2 (FIG. 8), virtually 100 percent of the displacement is useable.
- Now referring to FIG. 9, the structural aspects of a MEMS variable capacitor in accordance with an embodiment of the present invention are disclosed. MEMS
variable capacitor 99 with stabilizedelectrostatic drive 100 is comprised of at least onedriver capacitor pair 120 having a driver fixedcapacitor 121 in series with adriver variable capacitor 126. FIG. 6 illustrates MEMSvariable capacitor 99 with an electrostatic driver comprised of a singledriver capacitor pair 120. - MEMS
variable capacitor 100 also has avariable capacitor 130 that connects to the remainder of the circuit (not shown).Variable capacitor 130 is comprised of alower plate 131, anupper plate 132, and a portion of adielectric membrane 140.Dielectric membrane 140 displaces vertically, as shown by the bold arrow, in response to the application of an actuation voltage potential todriver capacitor pair 120, thereby varying the capacitance ofvariable capacitor 130. -
MEMS variable capacitor 99 with stabilizedelectrostatic drive 100 is fabricated beginning with asubstrate 110, preferably a non-conductive substrate. In the preferred embodiment, an isolation layer ofnon-conductive material 111, such as silicon oxide or silicon nitride, is deposited onsubstrate 110 to facilitate the manufacturing process. In a subsequent step, a metal layer is deposited to form alower electrode 122 of driver fixedcapacitor 121 on the isolation layer. Alternatively the metal layer may be deposited directly onsubstrate 110.Lower electrode 122 of driver fixedcapacitor 121 is connected to the remainder of the actuation circuit by any number of conventional means such as a metal trace. - Subsequently, another isolation layer of
non-conductive material 112 is fabricated overisolation layer 111 andlower electrode 122 of driver fixedcapacitor 121. Thus, thelower electrode 122 of fixedcapacitor 121 is electrically isolated from the remainder of the device. Then, another metal layer is deposited on an upper surface ofsecond isolation layer 112 to formlower plate 131 forvariable capacitor 130 and a dual-use electrode 125. Dual-use electrode 125 serves as the upper electrode of driver fixedcapacitor 121 and the lower electrode of thedriver variable capacitor 126. - Subsequent steps include the formation of a sacrificial layer (not shown), i.e., a temporary layer used to establish the effective gap go between
dielectric membrane 140 anddual use electrode 125, the formation of ananchor post 150 from whichdielectric membrane 140 is suspended, the formation ofdielectric membrane 140 and the deposition of another metal layer on the upper surface ofdielectric membrane 140, which formsupper plate 132 ofvariable capacitor 130, and anupper electrode 127 ofdriver variable capacitor 126. - Ultimately the sacrificial layer is removed so that
dielectric membrane 140 is free to displace vertically in response to the application of the actuation voltage. In the embodiment illustrated in FIG. 9, there is an offset indielectric membrane 140 to adjust the gap betweenlower plate 131 anddielectric membrane 140 to be slightly different from the gap g0. However, in alternate embodiments, the offset may be varied or even eliminated, depending on the application of the device. - Now referring to FIG. 10, a MEMS
variable capacitor 101 with stabilized electrostatic drive in accordance with another embodiment is illustrated. MEMSvariable capacitor 101 includes asubstrate 110 andisolation layers variable capacitor 101 is comprised of two driver capacitor pairs 120. Each of thedriver capacitor pair 120 is comprised of a driver fixedcapacitor 121 and adriver variable capacitor 126. Driver fixedcapacitor 121 is comprised of alower electrode 122 and a dual-use electrode 125. Also, the driver variable capacitor is comprised of dual-use electrode 125 and anupper electrode 127. Thus, as in the previous embodiment, dual-use electrode 125 serves as the upper electrode of driver fixedcapacitor 121 and the lower electrode ofdriver variable capacitor 126. - Each end of
dielectric membrane 140 is connected to ananchor 150.Variable capacitor 130, comprising alower plate 131, anupper plate 132 and a portion ofdielectric membrane 140, is located in the approximate center ofdielectric membrane 140. The actuation voltage is simultaneously applied to each of the driver capacitor pairs 120 to control the deflection ofdielectric membrane 140. - FIG. 11 is a
chart 200 comparing actuation voltage potential with displacement of the membrane for forward and reverse bias for a MEMS capacitor in accordance with an embodiment of the present invention.Chart 200 is a plot of actuation voltage versus displacement for a typical device. Note that the forward bias curve is virtually identical to the reverse bias curve. The snap effect is effectively eliminated and there is no abrupt hysteresis as was common in prior art devices. - Although the invention has been particularly shown and described with reference to a preferred embodiment thereof, it will be understood by those skilled in the art that changes in form and detail may be made therein without departing from the spirit and scope of the invention.
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