US20010023131A1

US20010023131A1 - Semiconductor processing methods of forming a contact opening

Info

Publication number: US20010023131A1
Application number: US09/862,229
Authority: US
Inventors: Zhiqiang Wu; Alan Reinberg; Manny Ma
Original assignee: Individual
Current assignee: US Bank NA
Priority date: 1997-02-27
Filing date: 2001-05-21
Publication date: 2001-09-20
Anticipated expiration: 2017-02-27
Also published as: US6444572B2; US5985766A; US6274482B1

Abstract

The invention provides methods for forming contact openings to a substrate location with which electrical connection is desired. According to one aspect, a multi-level layer comprising masking material or photoresist is formed atop an electrically conductive substrate surface and defines a mask opening through which a contact opening is to be formed to an elevationally lower substrate location. A single layer of photoresist is patterned to form an elevationally thicker first layer immediately laterally adjacent the mask opening than a second layer which is formed laterally outward of the first layer. The electrically conductive substrate surface is etched through the mask opening to form the contact opening. The photoresist second layer is removed and the conductive substrate surface is etched to form a portion of an outer conductive component. Thereafter, conductive material is formed in the contact opening to electrically connect elevationally separated layers. According to another aspect, a masking material layer comprises a bi-level profile having two different layer elevational thicknesses, the greater of which being disposed immediately laterally adjacent a contact opening pattern. A contact opening is etched through the substrate outer surface and conductive material is formed therein to electrically connect the substrate location with an outer conductive layer. In a preferred implementation, the masking material layer or photoresist is formed through photolithography using only a single mask. In another implementation, more than one mask is used to define the multi-level or bi-level profile masking material layer. The multi-level masking layer can have more than two levels.

Description

TECHNICAL FIELD

This invention relates to semiconductor processing methods of forming a contact opening.

BACKGROUND OF THE INVENTION

Semiconductor fabrication typically involves forming conductive connections between substrate locations which are elevationally separated by one or more layers. To do so, portions of such layers must ordinarily be removed. Typically, such layer portions are removed by patterning and etching a contact opening through the overlying layers of material to expose an elevationally lower substrate location with which a conductive connection is desired. Such constitutes a first masking step in which a first mask is used to pattern the desired contact opening.

Subsequently, conductive material is formed within the contact opening to interconnect desired elevationally separated layers. Typically, following the interconnect step, the outermost elevationally separated layer is patterned and etched in a second masking step which utilizes a second mask which is different from the first mask. Such might be the case when, for example, the outermost layer is patterned into a conductive line.

Accordingly, at least two separate masks are needed to respectively pattern two different layers of photoresist which are required to be formed at separate times over the substrate and at different processing points in the processing flow. It is desirable to reduce the number of processing steps which are required in a processing flow.

This invention grew out of concerns associated with simplifying semiconductor processing and reducing the number of processing steps which are required in a processing flow.

SUMMARY OF THE INVENTION

The invention provides methods of forming contact openings over a substrate to a substrate location with which electrical connection is desired. According to one aspect, a multi-level layer comprising masking material is formed atop an electrically conductive substrate surface and defines a mask opening through which a contact opening is to be formed to an elevationally lower substrate location. The masking material constitutes a single layer of photoresist which is patterned to form an elevationally thicker first layer immediately laterally adjacent the mask opening than a second layer which is formed laterally outward of the first layer. The electrically conductive substrate surface is etched through the mask opening to form the contact opening over the substrate location. The masking material second layer is then removed and the conductive substrate surface is etched to form at least a portion of an outer conductive component. Thereafter, conductive material is formed in the contact opening to electrically connect elevationally separated layers.

According to another aspect, a masking material layer is formed over a substrate outer surface and defines a pattern for a contact opening which is to be etched through the outer surface. In a preferred implementation, the masking material layer comprises a bi-level profile having two different layer elevational thicknesses, the greater of which being disposed immediately laterally adjacent the contact opening pattern. A contact opening is subsequently etched through the substrate outer surface to a substrate location. Conductive material is formed within the contact opening to electrically connect the substrate location with an outer layer.

In a preferred implementation, the masking material layer is photoresist formed through photolithography using only a single mask. In another implementation, more than one mask is used to define the multi-level or bi-level profile masking material layer. The multi-level masking layer can have more than two levels.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0009]
FIG. 1 is a diagrammatic sectional view of a semiconductor wafer fragment at one processing step in accordance with the invention. [0010]
FIG. 2 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 1. [0011]
FIG. 3 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 2. [0012]
FIG. 4 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 3. [0013]
FIG. 5 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 4. [0014]
FIG. 6 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 5. [0015]
FIG. 7 is a view of the FIG. 1 wafer at a processing step subsequent to that shown by FIG. 6. [0016]
FIG. 8 is a view of a semiconductor wafer fragment in accordance with an alternate embodiment of the invention. [0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” ([0018] Article 1, Section 8).
Referring to FIG. 1, a semiconductor wafer fragment in process is indicated generally at [0019] 10. Such comprises a semiconductive substrate 12 which supports a plurality of layers described just below. In the context of this document, the term “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including but not limited to, the semiconductive substrates mentioned above.
A [0020] substrate location 14 is supported over substrate 12. Substrate location 14 constitutes an elevationally lower substrate location and can comprise any suitable substrate location with which electrical connection is desired. Accordingly, location 14 can comprise conductive material, a conductive line, a transistor gate line, or a source/drain diffusion region which constitutes part of a transistor construction, to name just a few. In the context of this discussion, however, and for exemplary purposes only, substrate location 14 is discussed in the context of a first layer comprising metal material which is formed over substrate 12, such as a conductive line.
A [0021] second layer 16 is formed over and relative to first layer 14. In the illustrated example, such constitutes an insulative dielectric material which is formed over and under first layer 14 for insulating the same. Second layer 16 defines a substrate surface 18. A third layer 20 is formed over substrate surface 18. In the illustrated example, third layer 20 comprises a conductive metal material. Accordingly, third layer 20 defines a conductive substrate surface 22. A layer 24 is formed over substrate surface 22 and preferably comprises a masking material, most preferably photoresist.
Referring to FIG. 2, [0022] photoresist layer 24 is exposed to conditions which are effective to define a masking layer 26 atop third layer 20. In the illustrated and preferred embodiment, masking layer 26 constitutes an integrally formed, multi-level layer of masking material which defies a mask opening or contact opening pattern 28. The preferred multi-level masking material layer 26 is characterized by an elevationally variable thickness relative to third layer 20. In a preferred implementation, an elevationally thicker first masking material layer (corresponding to t₁) is formed immediately laterally adjacent mask opening 28 than a second masking material layer (corresponding to t₂) which is formed laterally outward of or away from the first masking material layer. It will be understood that masking layer 26 can include transition areas between its different levels which are not necessarily vertically disposed, and that the individual levels which constitute the multi-level masking layer may not be substantially flat, as is shown. Although not specifically shown, masking layer 26 can be patterned to define other structures in addition to mask opening 28. Such other structures can include conductive lines which are to be formed from layer 20 material. It will also be understood that masking layer 26 can include more than the two illustrated levels.
In the illustrated example, [0023] masking layer 26 constitutes a layer having a bi-level profile which is defined by two different layer elevational thicknesses, the greater of which (t₁) is disposed immediately laterally adjacent contact opening or masking layer opening 28. The illustrated masking layer opening 28 is defined, at least in part, by an inner masking layer wall 30 which extends a distance elevationally outward of conductive surface 22. Such distance corresponds to t₁.
A first [0024] masking layer level 32 is disposed adjacent inner masking layer wall 30. Accordingly, wall 30 terminates adjacent level 32. A laterally inner masking layer region is depicted by reference numeral 34. A laterally outward masking layer region is depicted by reference numeral 38. Region 34 is defined by the masking material which is disposed below level 32. Accordingly, region 34 extends laterally outward of inner masking layer wall 30. Region 34 includes an inner masking layer region outer surface, at least a portion of which coincides with and defines the first masking layer level 32. The first masking layer level 32 terminates adjacent an outer masking layer wall 36 which is joined with at least a portion thereof. Wall 36 extends elevationally downward from masking layer level 32 a distance which is less than the distance that the inner masking layer wall 30 extends outward of conductive surface 22.
Outer [0025] masking layer wall 36 terminates adjacent outer masking layer region 38. Region 38 is joined with and extends laterally away from or outward of outer masking layer wall 36. Region 38 includes an outer surface 40 which defines a second masking layer level which is elevationally lower than the first masking layer level 32.
In accordance with one implementation, the exposing of the photoresist layer comprises photolithography using a single mask for defining [0026] masking layer opening 28 and forming the illustrated photoresist construction. An exemplary mask which is suitable for use in such implementation is one which is characterized by different levels of light transmission. Such allows the subject photoresist to receive or be exposed to different levels of light at different locations. For example, a single mask suitable for use in rendering the FIG. 2 photoresist construction would have three different degrees of light transmission. That portion of the mask which overlies and corresponds to opening 28 would allow essentially all of the light to pass therethrough to fully expose all the thickness of the photoresist. That portion of the mask which corresponds to masking layer region 34 would essentially block all of the light so that the corresponding photoresist is not meaningfully exposed. That portion of the mask which corresponds to masking layer region 38 would essentially allow some of the light to pass therethrough so that some, but not all, of the photoresist thickness is exposed. Subsequent removal of the exposed photoresist would provide the FIG. 2 photoresist construction.
In accordance with another implementation, the FIG. 2 photoresist construction can be rendered through photolithography using more than one mask for defining [0027] masking layer opening 28. Either of the above described implementations constitute photolithographically exposing a single layer of photoresist.
Referring to FIG. 3, portions of [0028] conductive surface 22 are etched through mask opening 28 to at least partially, and preferably completely, form a contact opening 29 over substrate location 14 which outwardly exposes the same. In the illustrated example, portions of second layer 16 and third layer 20 which underlie conductive surface 22 are etched through the mask opening downwardly to substrate location 14. In one implementation, two etch chemistries can be utilized to form the subject contact opening. Accordingly, a first etch chemistry can etch layer 20 material selectively relative to layer 16 material. A second etch chemistry can etch layer 16 material selectively relative to layer 20 and layer 14 material. In the illustrated example, layer 20 and layer 14 constitute metal materials and layer 16 constitutes an insulative dielectric layer or oxide material. Accordingly, the first etch would etch the metal material comprising layer 20 selectively relative to the insulative dielectric layer, and the second etch would etch the dielectric insulative material selectively relative to the metal materials comprising layers 20 and 14. Other etch regimes are of course possible.
Referring to FIG. 4, at least some, and preferably all of the second masking material layer in [0029] region 38 is removed to outwardly expose corresponding portions of conductive surface 22. In a preferred implementation, such is accomplished utilizing a timed etch or etchback process. Accordingly, such leaves behind at least some of the first masking material layer in region 34 over associated underlying third layer material 20. Such etch can also etch into substrate location 14 as shown.
Referring to FIG. 5, exposed [0030] third layer 20 portions in region 38 are etched inwardly to outwardly expose second layer 16. Such constitutes etching portions of third layer 20 which are laterally outward of the contact opening while at least some of masking layer 26 remains in place. If layers 20 and 14 are different materials, then an etching process which etches layer 20 at a faster rate than layer 14 can be utilized. As an example, if layer 14 constitutes tungsten and layer 20 constitutes aluminum, then an etching process utilizing BCl₃and Cl₂will desirably etch tungsten at a very low rate relative to the aluminum. In addition, as layer 14 can be typically disposed at the bottom of a usually deep contact hole or opening, its resulting etch rate is or can be reduced accordingly. This is so, even in instances when the materials from which layers 14 and 20 are formed are the same material. In the illustrated example, portions of the masking layer which remain in place during removal of the laterally outward portions of layer 20 constitute those masking layer portions which are laterally closest to or proximate the contact opening. Subsequently, such remaining masking layer portions are removed to outwardly expose underlying portions of layer 20.
Referring to FIG. 6, a [0031] conductive material layer 44 is formed over the substrate, the exposed portions of layer 20, and to within contact opening 28 to interconnect substrate location or first layer 14 and third layer 20. Accordingly, electrical connection is made therebetween. An exemplary material for layer 44 is conductively doped polysilicon which is formed by chemical vapor deposition over the substrate. Accordingly, conductive layer 44 is formed over the remaining outer conductive surfaces 22 and the lower substrate location 14.
Referring to FIG. 7, [0032] conductive material layer 44 is etched laterally outward of third layer 20 to form an outer conductive component 46 which comprises at least some of third layer 20 and the outer conductive surface 22 thereof. Such outer conductive component can constitute a conductive line. In a preferred implementation, such etch is an anisotropic etch which is conducted laterally adjacent etched third layer portions in a manner which is sufficient to leave conductive spacers 48 over third layer 20.
Referring to FIG. 8, an alternate embodiment is set forth. Like numbers from the first described embodiment are utilized where appropriate, with differences being indicated with the suffix “a” or with different numerals. Accordingly, outer [0033] conductive component 46 a includes third layer 20 a and a suitable conductive layer 21 thereatop. In the illustrated example, such conductive layer 21 can comprise a material such as TiN which might be utilized for barrier purposes or as an etch stop in connection with the etching of conductive material layer 44 to form component 46 a. In the illustrated and preferred embodiment, layers 20 a and 21 constitute different conductive layers.
As mentioned above, [0034] substrate location 14 can constitute any suitable substrate location with which electrical connection is made by removing one or more overlying material layers to form a contact opening thereto. For example, in the context of dynamic random access memory devices, such can be utilized to form one or more bit line contacts to transistor source/drain regions. Such can also be utilized to form a contact to an integrated circuitry landing pad.
In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. [0035]

Claims

1. A semiconductor processing method of forming a contact opening comprising:

forming a multi-level layer comprising masking material atop an electrically conductive substrate surface, the multi-level layer defining a mask opening through which a contact opening is to be formed over an elevationally lower substrate location; and

etching the electrically conductive substrate surface through the mask opening in the multi-level layer to at least partially form the contact opening over the substrate location.

2. The semiconductor processing method of

claim 1

, wherein the forming of the multi-level layer comprises:

forming an elevationally thicker first layer of the masking material immediately laterally adjacent the mask opening than a masking material second layer which is formed laterally away from the first layer.

3. The semiconductor processing method of

claim 1

wherein the electrically conductive surface defines a surface of a previously formed layer comprising conductive material and further comprising:

after the etching of the substrate surface, forming conductive material within the contact opening to electrically connect the previously formed layer and the elevationally lower substrate location.

4. The semiconductor processing method of

claim 1

, wherein the forming of the multi-level layer comprises forming an elevationally thicker masking material first layer immediately laterally adjacent the mask opening than a masking material second layer which is formed laterally away from the first layer, and further comprising:

after the etching of the substrate surface, removing at least some of the masking material second layer to outwardly expose at least some of the electrically conductive substrate surface, the electrically conductive substrate surface defining a surface of a previously formed layer comprising conductive material;

etching through at least some of the exposed electrically conductive substrate surface and into the previously formed layer; and

forming conductive material within the contact opening and electrically connecting at least some of the previously formed layer and the elevationally lower substrate location.

5. The semiconductor processing method of

claim 1

, wherein elevationally lower substrate location comprises a conductive line.

6. The semiconductor processing method of

claim 1

, wherein elevationally lower substrate location comprises a source/drain diffusion region.

7. A semiconductor processing method of forming a contact opening over a substrate comprising:

forming a layer comprising masking material over a substrate outer surface, the layer defining a pattern for a contact opening which is to be etched through the outer surface, the layer comprising a bi-level profile having two different layer elevational thicknesses the greater of which being disposed immediately laterally adjacent the contact opening pattern; and

etching at least a portion of a contact opening through the substrate outer surface.

8. The semiconductor processing method of forming a contact opening of

claim 7

, wherein the forming of the layer comprises photolithography using only a single mask for defining the contact opening pattern.

9. The semiconductor processing method of forming a contact opening of

claim 7

, wherein the forming of the layer comprises photolithography using more than one mask for defining the contact opening pattern.

10. The semiconductor processing method of forming a contact opening of

claim 7

further comprising:

prior to forming the masking material layer, forming a layer comprising conductive material over a substrate surface, the masking material layer being formed atop the conductive material layer, and

after forming the masking material layer, etching a contact opening through the conductive material layer to an elevationally lower substrate location.

11. The semiconductor processing method of forming a contact opening of

claim 7

further comprising:

after forming the masking material layer, etching a contact opening through the conductive material layer to an elevationally lower substrate location, the location comprising a conductive line.

12. The semiconductor processing method of forming a contact opening of

claim 7

further comprising:

after forming the masking material layer, etching a contact opening through the conductive material layer to an elevationally lower substrate location, the location comprising a source/drain diffusion region.

13. The semiconductor processing method of forming a contact opening of

claim 7

further comprising:

after forming masking material layer:

etching a contact opening through the conductive material layer to an elevationally lower substrate location, the location comprising conductive material; and

depositing additional conductive material within the contact opening to a degree sufficient to electrically connect the elevationally lower substrate location and the conductive material layer which was formed over the substrate surface.

14. A semiconductor processing method of forming an interlayer connection comprising:

forming a first layer comprising conductive material over a substrate;

forming a second layer comprising an insulative material elevationally over the first layer;

forming a third layer comprising conductive material elevationally over the second layer;

forming a masking layer over the third layer, the masking layer having an elevationally variable thickness relative to the third layer and defining a mask opening through which a contact opening to the first layer is to be formed;

etching portions of the second and third layers through the mask opening elevationally over the first layer to at least partially define the contact opening;

after etching portions of the second and third layers and with at least some of the masking layer in place, etching other portions of the third layer laterally outward of the contact opening; and

forming conductive material over the substrate and within the contact opening to interconnect the first and third layers.

15. The semiconductor processing method of

claim 14

, wherein the at least some of the masking layer which is left in place after the etching of the portions of the second and third layers comprises masking layer closest the contact opening.

16. The semiconductor processing method of

claim 14

, wherein the forming of the masking layer comprises forming an elevationally thicker masking layer immediately laterally adjacent the mask opening than laterally outward of the mask opening.

17. The semiconductor processing method of

claim 14

, wherein the forming of the masking layer comprises photolithography using only a single mask for defining the contact opening.

18. The semiconductor processing method of

claim 14

, wherein the forming of the masking layer comprises photolithography using more than one mask for defining the contact opening.

19. The semiconductor processing method of

claim 14

further comprising:

after the forming of the conductive material, etching the third layer conductive material to form an outer conductive component comprising the third layer.

20. The semiconductor processing method of

claim 14

, wherein the forming of the third layer comprises forming at least two different conductive layers.

21. A semiconductor processing method of forming a contact opening comprising:

forming a photoresist layer over a substrate outer conductive surface;

exposing the photoresist layer to conditions which are effective to form a masking layer having:

a masking layer opening through which a contact opening is to be formed, the masking layer opening being defined at least in part by an inner masking layer wall which extends a distance elevationally outward of the conductive surface and terminates adjacent a first masking layer level,

an inner masking layer region extending laterally outward of the inner masking layer wall and having an inner masking layer region outer surface which defines, at least in part, the first masking layer level,

an outer masking layer wall joined with at least a portion of the inner masking layer region outer surface and extending elevationally downward therefrom a distance which is less than the distance the inner masking layer wall extends outward of the conductive surface; and

an outer masking layer region a portion of which is joined with and extends laterally outward of the outer masking layer wall, the outer masking layer region having an outer masking layer region outer surface which defines, at least in part, a second masking layer level which is elevationally lower than the first masking layer level; and

etching, through the masking layer opening, at least a portion of a contact opening through the substrate outer conductive surface to an elevationally lower substrate location.

22. The semiconductor processing method of

claim 21

, wherein the exposing of the photoresist layer comprises photolithography using a single mask for defining the masking layer opening.

23. The semiconductor processing method of

claim 21

, wherein the exposing of the photoresist layer comprises photolithography using more than one mask for defining the masking layer opening.

24. The semiconductor processing method of

claim 21

further comprising forming conductive material in the contact opening to electrically connect the outer conductive surface and the lower substrate location.

25. The semiconductor processing method of

claim 21

further comprising:

after etching the contact opening:

removing at least portions of the outer masking layer region to expose underlying outer conductive surface;

etching at least portions of the exposed outer conductive surface; and

forming conductive material in the contact opening to electrically connect the outer conductive surface and the lower substrate location.

26. The semiconductor processing method of

claim 21

further comprising:

after etching the contact opening:

etching at least portions of the exposed outer conductive surface;

removing remaining photoresist layer material proximate the contact opening to expose underlying outer conductive surface which is different from the first mentioned underlying outer conductive surface;

forming conductive material in the contact opening and over exposed outer conductive surface to electrically connect the outer conductive surface and the lower substrate location; and

anisotropically etching the conductive material to form an outer conductive component comprising at least some of the outer conductive surface.

27. The semiconductor processing method of

claim 21

, wherein the elevationally lower substrate location comprises conductive material.

28. The semiconductor processing method of

claim 21

, wherein the elevationally lower substrate location comprises a conductive line.

29. The semiconductor processing method of

claim 21

, wherein the elevationally lower substrate location comprises a source/drain diffusion region.

30. A semiconductor processing method of forming an interlayer connection comprising:

forming a first layer comprising conductive material over a substrate;

forming a second layer comprising an insulative dielectric material over the first layer;

forming a third layer comprising conductive material over the second layer;

forming a multi-level layer comprising masking material atop the third layer, the multi-level masking material layer defining a mask opening through which a contact opening to the first layer is to be etched, the multi-level masking material layer comprising an elevationally thicker first masking material layer immediately laterally adjacent the mask opening than a second masking material layer which is formed laterally outward of the first masking material layer;

etching portions of the second and third layers through the mask opening in the multi-level masking material layer elevationally over and downwardly to and exposing at least some of the first layer material to define the contact opening thereto;

removing at least some of the second masking material layer to outwardly expose underlying third layer material, at least some of the first masking material layer remaining in place over associated third layer material;

etching exposed third layer material inwardly to underlying second layer dielectric material, the etching exposing at least some of the second layer dielectric material;

forming a conductive polysilicon layer over the substrate and to within the contact opening, the conductive polysilicon layer overlying etched third layer material and adjacent second layer dielectric material and electrically interconnecting the third layer material and the exposed first layer material; and

etching the conductive polysilicon layer laterally adjacent the etched third layer material to define an outer conductive component which is in electrical communication with the first layer material.

31. The semiconductor processing method of

claim 30

, wherein the first and third layers comprise metal material.

32. The semiconductor processing method of

claim 30

, wherein the first masking material layer and the second masking material layer comprise the same material.

33. The semiconductor processing method of

claim 30

, wherein the forming a multi-level layer comprises photolithography using only a single mask to provide an integrally formed multi-level layer comprising photoresist.

34. A semiconductor processing method of forming an interlayer connection comprising:

forming a first layer comprising conductive material over a substrate;

forming a third layer comprising conductive material over the second layer;

forming a multi-level layer comprising photoresist atop the third layer, the multi-level photoresist layer defining a mask opening through which a contact opening to the first layer is to be etched, the multi-level photoresist layer comprising an elevationally thicker first photoresist layer immediately laterally adjacent the mask opening than a second photoresist layer which is formed laterally outward of the first photoresist layer;

etching portions of the second and third layers through the mask opening in the multi-level photoresist layer elevationally over and downwardly to and exposing at least some of the first layer material to define the contact opening thereto, the etching also removing at least some of the exposed first layer material;

removing all of the second photoresist layer to outwardly expose underlying third layer material, at least some of the first photoresist layer remaining in place over associated third layer material;

chemical vapor depositing a conductively doped polysilicon layer over the substrate and to within the contact opening, the polysilicon layer overlying etched third layer material and adjacent second layer dielectric material and electrically interconnecting the third layer material and the exposed first layer material; and

anisotropically etching the polysilicon layer laterally adjacent the etched third layer material to define an outer conductive component which is in electrical communication with the first layer material.

35. The semiconductor processing method of

claim 34

, wherein the first and third layers comprise metal material.