US20010011758A1 - Method and device to increase latch-up immunity in cmos device - Google Patents

Method and device to increase latch-up immunity in cmos device Download PDF

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US20010011758A1
US20010011758A1 US09/044,356 US4435698A US2001011758A1 US 20010011758 A1 US20010011758 A1 US 20010011758A1 US 4435698 A US4435698 A US 4435698A US 2001011758 A1 US2001011758 A1 US 2001011758A1
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mobility
implant
isolation structure
latch
species
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Jeffrey S Brown
Robert J Gauthier
Xiaowei Tian
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GlobalFoundries Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/086—Isolated zones

Definitions

  • This invention generally relates to semiconductor devices, and more specifically relates to methods and structures to increase latch-up immunity.
  • Latch-up is a well known problem caused by unwanted transistor action between elements of the integrated circuit. This unwanted transistor action can be triggered by a wide variety of events, and can cause the semiconductor device to fail.
  • Latch-up is generally caused by the close proximity of n-channel and p-channel devices in modern CMOS devices.
  • CMOS devices fabricated on a p-type substrate would contain a p-channel device fabricated in a n-well (or n-type region) and an n-channel device fabricated in a p-well (or p-type region), with only a short distance between the wells.
  • This structure inherently forms a parasitic lateral bipolar structure (npn) and parasitic vertical bipolar structure (pnp). Under certain biasing conditions the pnp structure can supply base current to npn structure (or vice versa), causing a large current to flow from one well to the other well. This large current can damage the CMOS device.
  • CMOS devices have been addressed in several ways.
  • One way involves reducing the “gain” or beta of the transistor (npn and pnp). This generally reduces the propensity of the CMOS device to latch-up by increasing the trigger voltage/current, where the trigger voltage/current is the voltage/current that must be applied to a node to induce latch-up.
  • the latch-up holding voltage is the lowest stable voltage that can support a large current after latch-up is triggered.
  • the optimal situation is to have a holding voltage greater than the burn-in voltage, typically 1.5 volts above the nominal supply voltage (Vdd).
  • Shallow trench isolation has been used between the n-channel and p-channel devices to minimize the likelihood of latch-up.
  • STI shallow trench isolation
  • the STI depth tends to decrease. This causes the latch-up holding voltage to be reduced. If the latch-up holding voltage is reduced significantly, i.e., to less than the bum-in voltage, the reliability of the device can be negatively impacted.
  • the present invention overcomes the limitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by reducing the mobility of charge carriers between the devices.
  • the preferred embodiment uses an implant formed beneath trench isolation between n-channel and p-channel devices.
  • the implant reduces the mobility of the carriers wich flow from P+ regions to N+ regions and vice versa. This increases the latch-up holding voltage and thus improves the reliability of the technology.
  • the implants can be formed without the need for additional photolithography masks.
  • the advantage of the present invention is to increase the immunity to latch-up without adding undue complexity to the manufacturing process or requiring a larger area on the semiconductor substrate.
  • FIG. 1 is a cross sectional side view of a wafer portion
  • FIG. 2 is a cross sectional side view of a wafer portion with after trench etch for shallow trench isolation
  • FIG. 3 is a cross sectional side view of a wafer portion with a shallow trench isolation with sidewall oxidation
  • FIG. 4 is a cross sectional side view of a wafer portion with a shallow trench isolation and an implant beneath the shallow trench isolation;
  • FIG. 5 is a cross sectional side view of a wafer portion with a finished shallow trench isolation and an implant beneath the shallow trench isolation;
  • FIG. 6 is a cross sectional side view of a wafer portion with devices fabricated in the n-well and p-well.
  • the preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by decreasing carrier mobility between n-channel and p-channel devices. This is accomplished by forming an implant between the devices.
  • the implant is formed beneath a shallow trench isolation (STI) between the n-channel and p-channel devices.
  • STI shallow trench isolation
  • the implant can be formed without requiring additional high energy implants or additional mask levels.
  • FIG. 1 is a cross-sectional schematic view of wafer portion 100 on which a CMOS device will be fabricated.
  • the wafer portion 100 comprises a p+ substrate with a p ⁇ epitaxial layer at the top portion.
  • CMOS device CMOS device
  • shallow trench isolation (STI) 102 is used to separate n-channel from p-channel devices.
  • the STI can be formed with any suitable processing method, such as reactive ion etching (RIE).
  • RIE reactive ion etching
  • a masking layer 104 is deposited across the wafer 100 .
  • the masking layer can comprise any suitable material, for example, a layer of silicon dioxide (SiO 2 ) under a layer of silicon nitride (SiN) is a commonly used material that may be patterned to form an etch mask.
  • the masking layer 104 is then patterned using conventional photolithography techniques.
  • the STI 102 is then formed by etching away portions of the wafer no longer covered by masking layer 104 .
  • Further processing steps will form n-channel devices and p-channel devices on the wafer portion 100 .
  • Isolation regions such as STI 102 are formed between these various devices (i.e., between two n-channel devices, between two p-channel devices and between an n-channel and a p-channel device. In all these cases the STI 102 serves to isolate the devices from each other.
  • the preferred embodiment results in less mobility for carriers beneath the STI 102 and thus allows the STI 102 to be more shallow than prior art STI's and still maintain effective isolation between devices.
  • the preferred embodiment improves the scalibility of STI without decreasing the latch-up immunity.
  • the next step is to grow sidewall oxidation 110 (suitably SiO 2 ) in the STI trench.
  • the sidewall oxidation 110 serves to reduce stress incurred by the STI etch and to remove surface contaminants.
  • the latch-up immunity is increased by reducing the mobility of carriers that travel under the STI 102 .
  • an implant or implants are used that improves the latch-up holding voltage. These implants can be made without additional masks.
  • a species is implanted forming implant 106 underneath STI 102 .
  • the implantation can be done with any suitable procedure, such as traditional ion implantation techniques.
  • the masking layer 104 blocks the implants from entering the other portions of wafer 100 .
  • the implant is self aligned, and does not require additional masks or process steps.
  • the implants can comprise any suitable material that would sufficiently degrade conductor mobility beneath STI 102 .
  • elements for implants are selected to minimize n-well or p-well counterdoping, and as such the preferred implant would result in minimal doping change for the adjacent n-wells or p-wells.
  • the preferred implant should be selected to have low diffusitivity, thus reducing the probability of the implants diffusing into neighboring devices.
  • the elements preferably comprise large, heavy elements. Large elements result in an increased probability of scattering, and hence significantly decrease the mobility of the conductors beneath the STI. When latch-up occurs, the current flows almost entirely beneath the STI 102 , thus reductions in the mobility beneath the STI 102 will increase the latch-up holding voltage.
  • the preferred implants can be electrically neutral species, such as argon (Ar), germanium (Ge), oxygen (O), nitrogen (N), and would thus decrease the mobility of carriers with a very low change to the dopant profile of the substrate.
  • the implants can be p-type and n-type materials used in combination to reduce the mobility while resulting a low net dopant profile changes.
  • species such as indium (In) in combination with antimony (Sb) and phosphorus (P) in combination with boron (B) can be used.
  • the implants are preferably either a counter doping combination of n-type and p-type materials to minimize effects to neighboring wells, or an electrically inactive species.
  • the implants are preferably implanted at relatively low energies to keep the implants directly under the STI 102 .
  • the implant 106 is formed before the formation of the sidewall oxidation 110 .
  • the fabrication of the wafer continues.
  • the STI trench is then filled and the wafer 100 is then planaraized with a chemical mechanical polish (CMP). This removes the remaining masking layer 104 and excess sidewall oxidation, resulting in the finished shallow trench isolation.
  • CMP chemical mechanical polish
  • a n-channel device including a gate 602 , gate oxide 604 and diffusions 606 and 608 are formed in the p-well 610 .
  • a p-channel device including a gate 612 , gate oxide 614 and diffusions 616 and 618 are formed in the n-well 620 .
  • the implant 106 serves to increase the latch-up holding voltage by reducing carrier mobility between the devices. This increases the latch-up immunity of the CMOS devices.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The preferred embodiment of the present invention overcomes the imitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by reducing the mobility of carriers between the devices. The preferred embodiment uses an implant formed beneath trench isolation between n-channel and p-channel devices. This implant preferably comprises relatively large/heavy elements implanted into the wafer beneath the trench isolation. The implant elements reduce the mobility of the charge carriers. This increases the latch-up holding voltage and thus reduces the likelihood of latch-up. The implants can be formed without the need for additional photolithography masks.

Description

    BACKGROUND OF THE INVENTION
  • 1. Technical Field [0001]
  • This invention generally relates to semiconductor devices, and more specifically relates to methods and structures to increase latch-up immunity. [0002]
  • 2. Background Art [0003]
  • As integrated semiconductor devices continue to grow in complexity, there is a constant need to increase the density of the semiconductor devices. This increase in density creates several problems that can cause device failures if not addressed. One such problem is the propensity for semiconductor devices, particularly CMOS devices, to “latch-up.” Latch-up is a well known problem caused by unwanted transistor action between elements of the integrated circuit. This unwanted transistor action can be triggered by a wide variety of events, and can cause the semiconductor device to fail. [0004]
  • Latch-up is generally caused by the close proximity of n-channel and p-channel devices in modern CMOS devices. For example, a typical CMOS device fabricated on a p-type substrate would contain a p-channel device fabricated in a n-well (or n-type region) and an n-channel device fabricated in a p-well (or p-type region), with only a short distance between the wells. This structure inherently forms a parasitic lateral bipolar structure (npn) and parasitic vertical bipolar structure (pnp). Under certain biasing conditions the pnp structure can supply base current to npn structure (or vice versa), causing a large current to flow from one well to the other well. This large current can damage the CMOS device. [0005]
  • The propensity for CMOS devices to latch-up has been addressed in several ways. One way involves reducing the “gain” or beta of the transistor (npn and pnp). This generally reduces the propensity of the CMOS device to latch-up by increasing the trigger voltage/current, where the trigger voltage/current is the voltage/current that must be applied to a node to induce latch-up. [0006]
  • Another method in dealing with latch-up is to raise the latch-up holding voltage. The latch-up holding voltage is the lowest stable voltage that can support a large current after latch-up is triggered. By increasing the latch-up holding voltage, the latch-up immunity is increased and the likelihood of the circuit being damaged is decreased. The optimal situation is to have a holding voltage greater than the burn-in voltage, typically 1.5 volts above the nominal supply voltage (Vdd). [0007]
  • Shallow trench isolation (STI) has been used between the n-channel and p-channel devices to minimize the likelihood of latch-up. However, as device density continues to increase the STI depth tends to decrease. This causes the latch-up holding voltage to be reduced. If the latch-up holding voltage is reduced significantly, i.e., to less than the bum-in voltage, the reliability of the device can be negatively impacted. [0008]
  • Thus, there is a need for improved methods for increasing the latch-up immunity of CMOS devices by increasing the latch-up holding voltage. [0009]
    • DISCLOSURE OF INVENTION
  • The present invention overcomes the limitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by reducing the mobility of charge carriers between the devices. The preferred embodiment uses an implant formed beneath trench isolation between n-channel and p-channel devices. The implant reduces the mobility of the carriers wich flow from P+ regions to N+ regions and vice versa. This increases the latch-up holding voltage and thus improves the reliability of the technology. The implants can be formed without the need for additional photolithography masks. The advantage of the present invention is to increase the immunity to latch-up without adding undue complexity to the manufacturing process or requiring a larger area on the semiconductor substrate. [0010]
  • The foregoing and other advantages and features of the invention will be apparent from the following more particular description of a preferred embodiment of the invention, as illustrated in the accompanying drawings. [0011]
    • BRIEF DESCRIPTION OF DRAWINGS
  • The preferred exemplary embodiment of the present invention will hereinafter be described in conjunction with the appended drawings, where like designations denote like elements, and [0012]
  • FIG. 1 is a cross sectional side view of a wafer portion; [0013]
  • FIG. 2 is a cross sectional side view of a wafer portion with after trench etch for shallow trench isolation; [0014]
  • FIG. 3 is a cross sectional side view of a wafer portion with a shallow trench isolation with sidewall oxidation; [0015]
  • FIG. 4 is a cross sectional side view of a wafer portion with a shallow trench isolation and an implant beneath the shallow trench isolation; [0016]
  • FIG. 5 is a cross sectional side view of a wafer portion with a finished shallow trench isolation and an implant beneath the shallow trench isolation; and [0017]
  • FIG. 6 is a cross sectional side view of a wafer portion with devices fabricated in the n-well and p-well. [0018]
    • BEST MODE FOR CARRYING OUT THE INVENTION
  • The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by decreasing carrier mobility between n-channel and p-channel devices. This is accomplished by forming an implant between the devices. In the preferred embodiment, the implant is formed beneath a shallow trench isolation (STI) between the n-channel and p-channel devices. The implant can be formed without requiring additional high energy implants or additional mask levels. [0019]
  • FIG. 1 is a cross-sectional schematic view of [0020] wafer portion 100 on which a CMOS device will be fabricated. In the preferred embodiment, the wafer portion 100 comprises a p+ substrate with a p− epitaxial layer at the top portion. Of course other suitable substrate materials can be used.
  • Turning to FIG. 2, according to the preferred embodiment, shallow trench isolation (STI) [0021] 102 is used to separate n-channel from p-channel devices. The STI can be formed with any suitable processing method, such as reactive ion etching (RIE). For example, a masking layer 104 is deposited across the wafer 100. The masking layer can comprise any suitable material, for example, a layer of silicon dioxide (SiO2) under a layer of silicon nitride (SiN) is a commonly used material that may be patterned to form an etch mask. The masking layer 104 is then patterned using conventional photolithography techniques. The STI 102 is then formed by etching away portions of the wafer no longer covered by masking layer 104.
  • This forms the [0022] shallow trench isolation 102. Further processing steps will form n-channel devices and p-channel devices on the wafer portion 100. Isolation regions such as STI 102 are formed between these various devices (i.e., between two n-channel devices, between two p-channel devices and between an n-channel and a p-channel device. In all these cases the STI 102 serves to isolate the devices from each other.
  • As will become clear, the preferred embodiment results in less mobility for carriers beneath the [0023] STI 102 and thus allows the STI 102 to be more shallow than prior art STI's and still maintain effective isolation between devices. Thus, the preferred embodiment improves the scalibility of STI without decreasing the latch-up immunity.
  • Turning now to FIG. 3, the next step is to grow sidewall oxidation [0024] 110 (suitably SiO2) in the STI trench. The sidewall oxidation 110 serves to reduce stress incurred by the STI etch and to remove surface contaminants.
  • According to the preferred embodiment, the latch-up immunity is increased by reducing the mobility of carriers that travel under the [0025] STI 102. In particular, an implant or implants are used that improves the latch-up holding voltage. These implants can be made without additional masks.
  • Turning to FIG. 4, a species is implanted forming [0026] implant 106 underneath STI 102. The implantation can be done with any suitable procedure, such as traditional ion implantation techniques. The masking layer 104 blocks the implants from entering the other portions of wafer 100. Thus, the implant is self aligned, and does not require additional masks or process steps.
  • The implants can comprise any suitable material that would sufficiently degrade conductor mobility beneath [0027] STI 102. Preferably elements for implants are selected to minimize n-well or p-well counterdoping, and as such the preferred implant would result in minimal doping change for the adjacent n-wells or p-wells. Additionally, the preferred implant should be selected to have low diffusitivity, thus reducing the probability of the implants diffusing into neighboring devices.
  • Thus, the elements preferably comprise large, heavy elements. Large elements result in an increased probability of scattering, and hence significantly decrease the mobility of the conductors beneath the STI. When latch-up occurs, the current flows almost entirely beneath the [0028] STI 102, thus reductions in the mobility beneath the STI 102 will increase the latch-up holding voltage.
  • The preferred implants can be electrically neutral species, such as argon (Ar), germanium (Ge), oxygen (O), nitrogen (N), and would thus decrease the mobility of carriers with a very low change to the dopant profile of the substrate. In the alternative, the implants can be p-type and n-type materials used in combination to reduce the mobility while resulting a low net dopant profile changes. In these cases species such as indium (In) in combination with antimony (Sb) and phosphorus (P) in combination with boron (B) can be used. These elements, when implanted under the [0029] STI 102 causes the mobility of the carriers beneath the STI 102 to decrease. This increases the latch-up holding voltage and increases latch-up immunity.
  • Thus, the implants are preferably either a counter doping combination of n-type and p-type materials to minimize effects to neighboring wells, or an electrically inactive species. The implants are preferably implanted at relatively low energies to keep the implants directly under the [0030] STI 102.
  • In an alterative embodiment, the [0031] implant 106 is formed before the formation of the sidewall oxidation 110.
  • Turning now to FIG. 5, the fabrication of the wafer continues. In particular, the STI trench is then filled and the [0032] wafer 100 is then planaraized with a chemical mechanical polish (CMP). This removes the remaining masking layer 104 and excess sidewall oxidation, resulting in the finished shallow trench isolation.
  • The individual devices are now fabricated on both sides of the shallow trench isolation. Turning to FIG. 6, an example of completed devices are shown. In particular, a n-channel device, including a [0033] gate 602, gate oxide 604 and diffusions 606 and 608 are formed in the p-well 610. Likewise, a p-channel device including a gate 612, gate oxide 614 and diffusions 616 and 618 are formed in the n-well 620. In accordance with the preferred embodiment, the implant 106 serves to increase the latch-up holding voltage by reducing carrier mobility between the devices. This increases the latch-up immunity of the CMOS devices.
  • While the invention has been particularly shown and described with reference to a preferred exemplary embodiment with an CMOS device using shallow trench isolation, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. In particular any type of implant can be made that would reduce the mobility of the carriers beneath the STI. [0034]

Claims (20)

1. An isolation structure for increasing the latch-up holding voltage in a CMOS device fabricated in a semiconductor substrate, the isolation structure comprising:
a) a shallow trench fabricated in said semiconductor substrate; and
b) an implant, said implant formed below said trench in said semiconductor substrate, said implant reducing the mobility of carriers in said substrate beneath said shallow trench.
2. The isolation structure of
claim 1
 wherein said implant comprises n-type and p-type species and results in low net dopant profile change.
3. The isolation structure of
claim 1
 wherein said implant comprises an electrically neutral species.
4. The isolation structure of
claim 1
 wherein said implant comprises argon.
5. The isolation structure of
claim 1
 wherein said implant comprises oxygen.
6. The isolation structure of
claim 1
 wherein said implant comprises germanium.
7. The isolation structure of
claim 1
 wherein said implant comprises nitrogen.
8. The isolation structure of
claim 1
 wherein said implant comprises indium and antimony.
9. The isolation structure of
claim 8
 wherein said indium and antimony implant comprises a nearly electrically neutral combination.
10. The isolation structure of
claim 1
 wherein said implant comprises boron and phosphorus.
11. The isolation structure of
claim 10
 wherein said boron and phosphorus comprises a nearly electrically neutral combination.
12. A method for reducing the damaging effects of latch-up in CMOS devices comprising the steps of:
a) providing a semiconductor substrate;
b) defining a shallow trench in said semiconductor substrate; and
c) implanting a mobility degrading species below said shallow trench.
13. The method of
claim 12
 wherein said mobility degrading species comprises n-type and p-type species in combination to provide low net dopant profile change.
14. The method of
claim 12
 wherein said mobility degrading species comprises a neutral species to provide low dopant profile change.
15. The method of
claim 12
 wherein said mobility degrading species comprises argon.
16. The method of
claim 12
 wherein said mobility degrading species comprises oxygen.
17. The method of
claim 12
 wherein said mobility degrading species comprises germanium.
18. The method of
claim 12
 wherein said mobility degrading species comprises nitrogen.
19. The method of
claim 12
 wherein said mobility degrading species comprises indium and antimony.
20. The method of
claim 12
 wherein said mobility degrading species comprises boron and phosphorus.
US09/044,356 1997-03-17 1998-03-19 Method and device to increase latch-up immunity in cmos device Abandoned US20010011758A1 (en)

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