US1985118A - Dry rectifier - Google Patents

Dry rectifier Download PDF

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Publication number
US1985118A
US1985118A US510580A US51058031A US1985118A US 1985118 A US1985118 A US 1985118A US 510580 A US510580 A US 510580A US 51058031 A US51058031 A US 51058031A US 1985118 A US1985118 A US 1985118A
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US
United States
Prior art keywords
cathode
group
anode
rectifier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US510580A
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English (en)
Inventor
Willem Christiaan Van Geel
Jan Hendrik De Boer
Emmens Hendrik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of US1985118A publication Critical patent/US1985118A/en
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Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
    • G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
    • G03B42/025—Positioning or masking the X-ray film cartridge in the radiographic apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Definitions

  • Patented 18, 1934 UNITED STATES PATENT OFFICE Application January 22, 1831, Serial No. 510,580 In the Netherlands March 8, 1930 1 claim. (01. HR)
  • Such a rectifier commonly comprises two plates, preferably of conducting material, which are placed the one on the other and between which is provided an intermediate layer of a third material.
  • the cathode of the rectifier consists, at least in part, of a metal of the first sub-group of the fourth principal group of the periodic system.
  • the cathode consisting of one of these metals is preferably coated with a layer consisting of one or more compounds of this metal. Use is preferably made of a film consisting of one or more oxides of the metal constituting the cathode.
  • the cathode consists of a metal of the first sub-group of the fourth principal group
  • these substances while being in a powdery state, may be compressed to form plates.
  • the metal compounds may be formed from the material of the electrode itself. This may be efifected either electrolytically or chemically.
  • thorium or hafnium For obtaining a surface layer on titanium, thorium or hafnium one may proceed in an For obtaining a superficial layer by electrolysis, one may utilize, for example for the oxidation ofzirconium, the electrolytes phosphoric acid, sulfuric acid, lye or ammoniumborate. As the one electrode a zirconium plate is-placed'in the bath whereas for the other electrode use may be made of a rod of platinum. carbon or of an- 10 other material which cannot be attacked. The thickness of the layer may be concluded upon by the colour which the plate assumes during oxidation. With zirconium a satisfactory thickness of the oxide layer is obtained, for example, '15 by electrolytically oxidizing until the surface of the zirconium plate has taken a yellowish green colour.
  • the anode cuprous sulfide may be 25 added some free sulphur. If, for example, the cells are built up from a zirconium plate coated with an oxide layer and a cuprous sulfide plate one obtains a rectifier which has a very satisfactory characteristic and which appears to be 30 almost independent from temperature influences.
  • Lead sulfide, molybdenum sulfide, tungsten sulfide, iron sulfide, iron hammer scale may also enter into consideration, more particularly if it 40 is desired to obtain a rectifier with a slight internal resistance.
  • an anode of manganese oxide, silver chloride with free iodine, lead dioxide and cadmium oxide may consequently be chosen in accordance with the tensions to be applied and with the current intensity to be obtained.
  • the accompanying drawing represents schematically a dry rectifier adapted to rectify a twophase alternating current and composed of some of the above described rectifier cells.
  • the plates a which are coated with an oxide layer 1) consist, for example, of zirconium and constitute the cathodes.
  • the plates c consist for 56 example or pressed we, iodide with'treeiodine. Owing to the fact that at the points where .an
  • a rectifier destined for a low tension and a large current intensity and whose cells consist of the combination oi zirconium provided with an oxide layer and cuprous film and the anode of a mixture of silver chlo-' sulfide, will be particularly suitable for charging.
  • Such rectifiers maybe employed, for example, in plate-tension supply units.
  • a dry rectifier having a cathode and an anode, said cathode being formed substantially of one of the metals of the first sub-group of the fourth principal group oifthe periodic system, and a layer of oxide 0! the cathode metal coating said cathode, the anode comprising a metal compound which contains as its negative component one of theelements of the oxygen-group.
  • Adry rectifier having a cathode and an anode, said cathode being formed substantially of one of the metals or the first sub-group of the fourth principal group of the periodic system, and a layer of oxide of the cathode metal 4,5 coating said cathode, the anode comprising a means metal compound which contains as its negative two'elements I component one'oi. the elements oi the oxygengroup to which. has been added acertain qu'an-- tity of at least one of the free elements of the oxygen-group.
  • a dry rectifier having a cathode and an anode, said cathode being formed substantially of one of the metals of the first sub-group oi the. fourth principal group oi. the periodic system, a layer of oxide of the cathode metal coat-.
  • the cathode comprising cuprous sulfide.
  • a dry rectifier having a cathode and an anode, said cathode being formed substantially ,or vone oi the meta'lsoi the first sub-group of the tourth principal group oi the periodic system, a layer of oxide of the cathode metal coating said cathode, the anode comprising cuprous sulfide to Y which tree sulphur has been added.
  • a dry rectifier having a cathode and-an anode, said cathode being formed substantiallyof one of the metals of the first sub-group oi the fourthprincipal group of the periodic system, a layer-oi oxide oi' the cathode metal ooat-' ing said cathode, the ahodecomprising a compound which contains as its negative component at least one of the elements selected from the group comprising the halogen-group, the oxygengroup, and the nitrogen-group.
  • a dry rectifier having a cathode and an anode, said cathode being iormedsubstantially of one of the metals of the first sub-group of the fourth principal group of the periodic system, said anode comprising copper iodide.
  • a dry rectifier having a cathode and an anode, said cathode being formed substantially of one oi! the metals 0! the first sub-group of the fourth principal group of the periodic system,
  • said anode comprising copper iodideto which iree iodine has been added.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Hybrid Cells (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
US510580A 1930-03-08 1931-01-22 Dry rectifier Expired - Lifetime US1985118A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL50649A NL34153C (en(2012)) 1930-03-08 1930-03-08

Publications (1)

Publication Number Publication Date
US1985118A true US1985118A (en) 1934-12-18

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US510580A Expired - Lifetime US1985118A (en) 1930-03-08 1931-01-22 Dry rectifier

Country Status (9)

Country Link
US (1) US1985118A (en(2012))
AT (1) AT128220B (en(2012))
BE (1) BE377298A (en(2012))
CH (1) CH155911A (en(2012))
DE (1) DE631649C (en(2012))
DK (1) DK45412C (en(2012))
FR (1) FR712098A (en(2012))
GB (1) GB361738A (en(2012))
NL (1) NL34153C (en(2012))

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2749489A (en) * 1950-12-04 1956-06-05 Int Standard Electric Corp Dry contact rectifiers
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2784639A (en) * 1953-05-04 1957-03-12 Eastman Kodak Co Titanium nitride coated optical element
US2874102A (en) * 1953-08-12 1959-02-17 Rca Corp Electrodes and methods of making same
US3180807A (en) * 1961-10-23 1965-04-27 Lockheed Aircraft Corp Method for making film resistors
US3198718A (en) * 1960-05-26 1965-08-03 Lockheed Aircraft Corp Method for making structurally integrated film resistor assembly
US3199999A (en) * 1961-03-23 1965-08-10 Hi Shear Corp Pigment of titanium having titanium oxide coating; electrolytic method of making pigment; and reflector and paint containing same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB702620A (en) * 1951-10-26 1954-01-20 Standard Telephones Cables Ltd Improvements in or relating to dry contact rectifiers
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2749489A (en) * 1950-12-04 1956-06-05 Int Standard Electric Corp Dry contact rectifiers
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2784639A (en) * 1953-05-04 1957-03-12 Eastman Kodak Co Titanium nitride coated optical element
US2874102A (en) * 1953-08-12 1959-02-17 Rca Corp Electrodes and methods of making same
US3198718A (en) * 1960-05-26 1965-08-03 Lockheed Aircraft Corp Method for making structurally integrated film resistor assembly
US3199999A (en) * 1961-03-23 1965-08-10 Hi Shear Corp Pigment of titanium having titanium oxide coating; electrolytic method of making pigment; and reflector and paint containing same
US3180807A (en) * 1961-10-23 1965-04-27 Lockheed Aircraft Corp Method for making film resistors

Also Published As

Publication number Publication date
BE377298A (en(2012)) 1931-03-30
NL34153C (en(2012)) 1934-10-23
DE631649C (de) 1936-06-25
GB361738A (en) 1931-11-26
FR712098A (fr) 1931-09-24
AT128220B (de) 1932-05-10
DK45412C (da) 1932-03-21
CH155911A (de) 1932-07-15

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