US1961729A - Current rectifier - Google Patents

Current rectifier Download PDF

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US1961729A
US1961729A US570891A US57089131A US1961729A US 1961729 A US1961729 A US 1961729A US 570891 A US570891 A US 570891A US 57089131 A US57089131 A US 57089131A US 1961729 A US1961729 A US 1961729A
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silicon
current rectifier
couple
copper
current
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US570891A
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Audubert Rene
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Definitions

  • the invention is therefore based in principle upon a rectifying couple consisting of a layer of iodide or bromide, especially those of copper, and of a metalloid, silicon for example, inthe form of a plate or preferably that of a powder, said layers being brought into contact under adequate pressure.
  • a couple thus formed produces very remarkable rectifying phenomena.
  • a pastille ⁇ or plug having a superficial area of two square centimetres and consisting of silicon and of iodide or of bromide of copper is adapted to furnish rectified current subject to an effective tension of 10 to 12 volts, in the case of an alternation approximating to 0.5-0.7 ampere, and an output close to the theoretic output.
  • an effective tension 10 to 12 volts
  • an alternation approximating to 0.5-0.7 ampere an output close to the theoretic output.
  • the critical tension at. which the contact ceases to rectify owing to inner disruption, depends upon the degree oi.
  • the rectifying action may be stabilized by adding to the powdered iodide or bromide of copper a small percentage of asubstance such as bioxide oi! manganese, ⁇ oxide of zinc or of nickel and of other substances adapted to polarize the adjoining layer o! silicon by solid electrolysis.
  • the iodide and the bromide may be used as a (Cl. F15- 366) plate agglomerated under pressure with a binding material, or as a powder or again as a powder combined with a binding agent such as a varnish having a synthetic rosin basis, shellac, copal and the like. It is furthermore preferable to apply said powders or agglomerates upon a support such as paper or a fabric.
  • the silicon powder may be supported in like manner.
  • the attached diagram illustrates by way of example and without limiting the scope of the invention a preferred embodiment of the pastille adapted to act as rectifying couple.
  • 1 denotes a disc of any metal such as copper, for example, carrying a layer of the rectifying substance -2.
  • 3 is the layer of silicon and 4 is a second electrode.
  • a current rectifier constituted by means of a couple formed by a cuprous haloid in contact with silicon.
  • a current rectifier constituted by means of a couple formed by a cuprous iodide in contact with silicon.
  • a current rectifier constituted by means of a couple formed by a cuprous bromide in contact with silicon.
  • a current rectifier constituted by means of a couple formed by copper iodide in powdered form and silicon in powdered form.
  • a current rectier constituted by means of a couple formed by copper bromide in powdered form and silicon in powdered form.
  • 6.1A current rectifier consisting of a support, powdered copper iodide on said support, a second support, powdered silicon on said second support, said supports being placed together with the powder-supporting sides thereof toward each other.
  • a current rectifier constituted by means of a couple formed by agglomerated copper iodide and agglomerated silicon.
  • a current rectifier constituted by means of a couple formed by a copper'haloid. a polarizing substance, and silicon.
  • a current rectifier constituted by means of a coupleformed by a copper haloid, manganese dioxide, and silicon.
  • a current' rectifier constituted by a couple' stance, and silicon.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)

Description

June-5, 1934.
R. AUDUBERT 1,961,729
CURRENT RECTIFIER Filed 001'.. 24, 1931 ATT/mums,
Patented June 5, 1934 UNITED STATES PATENT OFFICE Application October 24, 1931, Serial No. 570,891 In France December 30, 1930 11 Claims.
15 limited.
The inventor has discovered that when certain iodides and bromides are placed in contact with a metalloid such as silicon, they constitute a couple which is free from the foregoing disadvantages.
The invention is therefore based in principle upon a rectifying couple consisting of a layer of iodide or bromide, especially those of copper, and of a metalloid, silicon for example, inthe form of a plate or preferably that of a powder, said layers being brought into contact under adequate pressure. A couple thus formed produces very remarkable rectifying phenomena.
It may be mentioned in this connection that a pastille` or plug having a superficial area of two square centimetres and consisting of silicon and of iodide or of bromide of copper is adapted to furnish rectified current subject to an effective tension of 10 to 12 volts, in the case of an alternation approximating to 0.5-0.7 ampere, and an output close to the theoretic output. Within a, wide range of temperatures (between -100 and +200 C.) the effects obtained are but slightly affected by the action of heat. The critical tension, at. which the contact ceases to rectify owing to inner disruption, depends upon the degree oi. compressibility of the powders and their granular structure and the thickness of the layers, but it is always extremely high and may reach 30 to 35 effective volts at a normal temperature (20 CJ. Under such conditions and subject to adequate cooling a rectiiled current of a mean intensity of about one ampere may be passed through a; single pastille but practically it is preferable that the couple should not work in a range close to the disruption tension. y
Applicant has ascertained that the rectifying action may be stabilized by adding to the powdered iodide or bromide of copper a small percentage of asubstance such as bioxide oi! manganese,`oxide of zinc or of nickel and of other substances adapted to polarize the adjoining layer o! silicon by solid electrolysis.
The iodide and the bromide may be used as a (Cl. F15- 366) plate agglomerated under pressure with a binding material, or as a powder or again as a powder combined with a binding agent such as a varnish having a synthetic rosin basis, shellac, copal and the like. It is furthermore preferable to apply said powders or agglomerates upon a support such as paper or a fabric.
The silicon powder may be supported in like manner.
The attached diagram illustrates by way of example and without limiting the scope of the invention a preferred embodiment of the pastille adapted to act as rectifying couple.
In said drawing, 1 denotes a disc of any metal such as copper, for example, carrying a layer of the rectifying substance -2. 3 is the layer of silicon and 4 is a second electrode.
'Ihe arrangements 4hereinbefore disclosed are intended to serve as examples only and all constructional details, shapes, dimensions and materials used may be varied without departure from the 'principle of the invention.
What I claim is:
1. A current rectifier constituted by means of a couple formed by a cuprous haloid in contact with silicon.
2. A current rectifier constituted by means of a couple formed by a cuprous iodide in contact with silicon.
3. A current rectifier constituted by means of a couple formed by a cuprous bromide in contact with silicon.
4. A current rectifier constituted by means of a couple formed by copper iodide in powdered form and silicon in powdered form.
5. A current rectier constituted by means of a couple formed by copper bromide in powdered form and silicon in powdered form.
6.1A current rectifier consisting of a support, powdered copper iodide on said support, a second support, powdered silicon on said second support, said supports being placed together with the powder-supporting sides thereof toward each other.
'1. A current rectifier constituted by means of a couple formed by agglomerated copper iodide and agglomerated silicon.
8. A current rectifier constituted by means of a couple formed by a copper'haloid. a polarizing substance, and silicon.
9. A current rectifier constituted by means of a coupleformed by a copper haloid, manganese dioxide, and silicon.
10. A current' rectifier constituted by a couple' stance, and silicon.)
REN AUDUBERT.
US570891A 1930-12-30 1931-10-24 Current rectifier Expired - Lifetime US1961729A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2601024A (en) * 1949-07-26 1952-06-17 Sylvania Electric Prod Electrode structure for electron discharge devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2601024A (en) * 1949-07-26 1952-06-17 Sylvania Electric Prod Electrode structure for electron discharge devices

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