US1863843A - Process of preparing metal for use in unidirectional current carrying devices - Google Patents

Process of preparing metal for use in unidirectional current carrying devices Download PDF

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Publication number
US1863843A
US1863843A US202811A US20281127A US1863843A US 1863843 A US1863843 A US 1863843A US 202811 A US202811 A US 202811A US 20281127 A US20281127 A US 20281127A US 1863843 A US1863843 A US 1863843A
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United States
Prior art keywords
copper
oxide
current carrying
unidirectional current
blank
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Expired - Lifetime
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US202811A
Inventor
Lars O Grondahl
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Hitachi Rail STS USA Inc
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Union Switch and Signal Inc
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Filing date
Publication date
Priority claimed from US1111A external-priority patent/US1640335A/en
Application filed by Union Switch and Signal Inc filed Critical Union Switch and Signal Inc
Priority to US202811A priority Critical patent/US1863843A/en
Priority to US209016A priority patent/US1704679A/en
Application granted granted Critical
Publication of US1863843A publication Critical patent/US1863843A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Definitions

  • My invention relates to unidirectional current carrying devices, and particularly to processes of preparing metal for use in such devices.
  • Fig. 1 is a view showing in elevation one form of blank ready to be prepared for use in a unidirectional current carrying device in accordance with my invention.
  • Fig. 2 is a view showing in vertical section the blank shown in Fig. l as it appears at one point in a process embodying my invention.
  • Fig. 3 is a view showing in vertical section a unit for use in a unidirectional current carryin device after the completion of a process em bodying my invention.
  • the reference character A designates a blank of suitable material, such as copper. As here shown,
  • this blank is of circular configuration and is provided with a central aperture A although this particular form is not essential.
  • this blank is first cleaned; an oxide is then formed directly on the metal by oxidizing the-metal at a relatively high temperature in an atmosphere containing oxygen.
  • the temperature should be in the neighborhood of 1000 degrees centigrade and below the melting point of copper, such a temperature apparently being essential to the formation of a compound having the proper homogeneity, that is, non-porosity.
  • this oxide there is always formed a very thin layer of cupric oxide on the surface of the cuprous oxide which constitutes the main body of the oxide.
  • the blank now appears as shown in Fig. 2, in which A is the copper b1ank,"1 is the layer of cuprous oxide,
  • cupric oxide is removed by suitable means, such, forexample, as emery cloth, as a sand blast, or nitric acid.
  • suitable means such as emery cloth, as a sand blast, or nitric acid.
  • the layer of cuprous oxide 1 on one surface of the blank is preferably also removed, and the finished unit then has the appearance shown in Fi 3.
  • the sur ace of the copper which is to carry the cuprous oxide should be smooth and chemically clean.
  • the finished unit shown in Fig. 3 may be utilized in the manner shown and described in my (parent application, Serial No. 1,111, referre to hereinbefore.
  • the method of obtaining a permanent :0 rectifying junction between copper and onprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide which comprises oxidizing a smooth surface of a :6 copper body at a temperature of about 7.
  • the method of obtaining a permanent rectifying junction between copper and cuprous oxide which permits substantially un- 00 obstructed flow of electrons only in the direction from the copper to the oxide which comprises heating said copper body in an atmosphere containing oxygen to a temperature above'800 C. but below the melting temperature of copper, forming thereby on said copper a layer of cuprous oxide having an outer layer ofcupric oxide.
  • the method of obtaining a permanent rectifying junction between copper and cuprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide which comprises heating said copper body in an atmosphere containing oxygen to a temperature above 800 C. but below the melting temperature of copper, forming thereby on said copper a layer of cuprous oxide having an outer layer of cupric oxide and removing the layer of cupric oxide.
  • the method of obtaining a permanent rectifying junction between copper and enprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide which comprises heating said copper body to a temperature between 1000 and 1050 in an atmosphere containing oxygen, forming thereby on said copper a layer of cuprous oxide having an outer layer of cupric oxide.

Description

June 21, O GRONDAHL 1,863,843
PROCESS OF PREPARING METAL FOR USE IN UNDIRECTIONAL CURRENT CARRYING DEVICES Original Filed Jan. 7, 1925 Patented June 21, 1932 UNITED STATES- PATENT OFFICE LABS O. GR ONDAHL, OF PITTSBURGH, PENNSYLVANIA, ASSIGNOR TO THE UNION SWITCH & SIGNAL COMPANY, 01' SWIBSVALE, PENNSYLVANIA, A CORPORATION 01 PENNSYLVANIA PROCESS OF PREPARIN G METAL FOR USE IN UNIDIRECTIONAL CURRENT CARRYING DEVICES Original application filed January 7, 1925, Serial No. 1,111. Patent No. 1,640,835. Divided and thll application filed July 1, 1927, Serial No. 202,811. Renewed January 15, 1982.
My invention relates to unidirectional current carrying devices, and particularly to processes of preparing metal for use in such devices.
The present application is a division of my copending application, Serial No. 1,111, filed January 7, 1925, for unidirectional current carrying devices, now Patent No. 1,640,335, August 25, 1927.
I will describe one method of preparing metal for use in unidirectional current carrying devices, and will then point out the novel features thereof in claims.
In the accompanying drawing, Fig. 1 is a view showing in elevation one form of blank ready to be prepared for use in a unidirectional current carrying device in accordance with my invention. Fig. 2 is a view showing in vertical section the blank shown in Fig. l as it appears at one point in a process embodying my invention. Fig. 3 is a view showing in vertical section a unit for use in a unidirectional current carryin device after the completion of a process em bodying my invention.
Similar reference characters refer to similar parts in each of the three views.
Referring to the drawing, the reference character A designates a blank of suitable material, such as copper. As here shown,
blank is of circular configuration and is provided with a central aperture A although this particular form is not essential. In the practice of my invention this blank is first cleaned; an oxide is then formed directly on the metal by oxidizing the-metal at a relatively high temperature in an atmosphere containing oxygen. In the case of copper, the temperature should be in the neighborhood of 1000 degrees centigrade and below the melting point of copper, such a temperature apparently being essential to the formation of a compound having the proper homogeneity, that is, non-porosity. In preparin this oxide there is always formed a very thin layer of cupric oxide on the surface of the cuprous oxide which constitutes the main body of the oxide. The blank now appears as shown in Fig. 2, in which A is the copper b1ank,"1 is the layer of cuprous oxide,
and 2 is the coating of cupric oxide, the two oxlde coatings being greatly magnified in thickness in this view. The layer of cupric oxide is removed by suitable means, such, forexample, as emery cloth, as a sand blast, or nitric acid. Furthermore, the layer of cuprous oxide 1 on one surface of the blank is preferably also removed, and the finished unit then has the appearance shown in Fi 3.
In order to insure good results, the sur ace of the copper which is to carry the cuprous oxide should be smooth and chemically clean.
. Some sheet copper has the appearance of having wrinkled on one side while cooling; such sheets will produce a good rectifier when the smooth side is used to carry the oxide, and a pgor rectifier when the wrinkled side is so use I I have found that a unit prepared in accordance with my invention will have the characteristic of ofiering a great deal hi her resistance to the electric current flowing rom the metallic copper A to the oxide 1 than the current flowing in the other direction.
The finished unit shown in Fig. 3 may be utilized in the manner shown and described in my (parent application, Serial No. 1,111, referre to hereinbefore.
Although I have herein shown and described only one process of preparing metal for use in unidirectional current carrying devices and embodying my invention, t is understood that various changes and modifications may be made therein within the scope of the appended claims without departing from the spirit and scope of my invention.
Having thus described my invention, what I claim is:
1. The process of preparing a unidirectional current carrying junction which consists in forming a smooth chemically clean surface on a copper blank, heating the blank to form oxides on said surface, and removing the cupric oxide.
2. The process of preparing a unidirectional current carrying junction which consists in cleaning a copper blank, heating the blank to form cuprous oxide next to the copper and cupric oxide over said cuprous oxide, and removing the cupric oxide.
3. The process of preparing a unidirectional current carrying junction which consists in heating a copper blank in the presence of oxygen to form oxides thereon, removing the oxides from a portion of the blank, andremoving only the outer high resistance coating from other parts of the blank.
4. The process of preparing a unidirectional current carrying junction which consists in heating a copper blank to substantially 10 00 centigrade in an oxidizing atmos phere.
5. The process of preparing a unidirectional-current carrying junction which con- 15 sists in heating a copper blank to substantially 1000 centigrade to form coatings of cuprous oxide and cupric oxide thereon, and removing the cupric oxide.
6. The method of obtaining a permanent :0 rectifying junction between copper and onprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide, which comprises oxidizing a smooth surface of a :6 copper body at a temperature of about 7. The method of obtaining a permanent rectifying junction between copper and cuprous oxide which permits substantially un- 00 obstructed flow of electrons only in the direction from the copper to the oxide which comprises heating said copper body in an atmosphere containing oxygen to a temperature above'800 C. but below the melting temperature of copper, forming thereby on said copper a layer of cuprous oxide having an outer layer ofcupric oxide.
8. The method of obtaining a permanent rectifying junction between copper and cuprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide, which comprises heating said copper body in an atmosphere containing oxygen to a temperature above 800 C. but below the melting temperature of copper, forming thereby on said copper a layer of cuprous oxide having an outer layer of cupric oxide and removing the layer of cupric oxide.
9. The method of obtaining a permanent rectifying junction between copper and enprous oxide which permits substantially unobstructed flow of electrons only in the direction from the copper to the oxide, which comprises heating said copper body to a temperature between 1000 and 1050 in an atmosphere containing oxygen, forming thereby on said copper a layer of cuprous oxide having an outer layer of cupric oxide.
In testimony whereof I aflix my signature.
LARS O. GRONDAHL.
US202811A 1925-01-07 1927-07-01 Process of preparing metal for use in unidirectional current carrying devices Expired - Lifetime US1863843A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US202811A US1863843A (en) 1925-01-07 1927-07-01 Process of preparing metal for use in unidirectional current carrying devices
US209016A US1704679A (en) 1925-01-07 1927-07-28 Unidirectional-current-carrying device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1111A US1640335A (en) 1925-01-07 1925-01-07 Unidirectional current-carrying device
US202811A US1863843A (en) 1925-01-07 1927-07-01 Process of preparing metal for use in unidirectional current carrying devices

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372468A (en) * 1965-06-24 1968-03-12 Olin Mathieson Method of coating a copper silver alloy with a silver coat
US3546459A (en) * 1966-03-18 1970-12-08 Oesterr Studien Atomenergie Single-crystal,drifted semi-conductor radiation detector having a bore therethrough

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372468A (en) * 1965-06-24 1968-03-12 Olin Mathieson Method of coating a copper silver alloy with a silver coat
US3546459A (en) * 1966-03-18 1970-12-08 Oesterr Studien Atomenergie Single-crystal,drifted semi-conductor radiation detector having a bore therethrough

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