US12033852B2 - Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium - Google Patents

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium Download PDF

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US12033852B2
US12033852B2 US17/748,841 US202217748841A US12033852B2 US 12033852 B2 US12033852 B2 US 12033852B2 US 202217748841 A US202217748841 A US 202217748841A US 12033852 B2 US12033852 B2 US 12033852B2
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base
film
gas
protective film
substrate
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Takayuki Waseda
Takashi Nakagawa
Kimihiko NAKATANI
Motomu DEGAI
Yoshitomo Hashimoto
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • H10P14/6512—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H10P14/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H10P14/3411—
    • H10P14/60—
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    • H10P14/6546—
    • H10P14/69215—
    • H10P14/69433—
    • H10P70/20—
    • H10P72/0402—
    • H10P72/0468—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H10P14/6339—

Definitions

  • FIG. 4 is a view illustrating a process sequence in selective growth according to embodiments of the present disclosure.
  • FIG. 5 D is a partial enlarged cross sectional view of the surface of the wafer 200 after silicon is selectively adsorbed on respective surfaces of the base 200 b and the protective film 200 e by supplying an aminosilane-based gas
  • FIG. 5 E is a partial enlarged cross sectional view of the surface of the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e , on which the silicon is adsorbed, are selectively modified by supplying a fluorine-containing gas
  • FIG. 5 F is a partial enlarged cross sectional view of the surface of the wafer 200 after a silicon nitride film is selectively formed on a surface of the base 200 a
  • FIG. 5 G is a partial enlarged cross sectional view of the surface of the wafer 200 after the wafer 200 illustrated in FIG. 5 F is exposed to the atmosphere.
  • the nozzle 249 b is disposed to face an exhaust port 231 a , which will be described later, on a straight line in a plane view, with the centers of the wafers 200 carried into the process chamber 201 interposed therebetween.
  • the nozzles 249 a and 249 c are disposed to sandwich a straight line L passing through the nozzle 249 b and the center of the exhaust port 231 a from both sides along the inner wall of the reaction tube 203 (the outer peripheral portion of the wafers 200 ).
  • the straight line L is also a straight line passing through the nozzle 249 b and the centers of the wafers 200 .
  • Processing temperature room temperature to 600 degrees C. or 50 to 550 degrees C. in some embodiments
  • the film thickness of the protective film 200 e formed at this step is about 10 ⁇ , which is smaller than the film thickness of the natural oxide films 200 d formed on the surface of the base 200 c before the DHF cleaning. Even if the film thickness of the protective film 200 e is small as described above, since the film thickness uniformity of the protective film 200 e is much higher than the film thickness uniformity of the natural oxide films, it becomes possible to sufficiently suppress the contact of the F 2 gas with the surface of the base 200 c when supplying the F 2 gas at step C as described hereinbelow.
  • step B After step B is completed, a F 2 gas is supplied to the wafer 200 in the process chamber 201 , namely the wafer 200 after Si is selectively adsorbed on the respective surfaces of the base 200 b and the protective film 200 e.
  • valve 243 b is opened to allow a F 2 gas to flow into the gas supply pipe 232 b .
  • the flow rate of the F 2 gas is adjusted by the MFC 241 b .
  • the F 2 gas is supplied into the process chamber 201 via the nozzle 249 b and is exhausted from the exhaust port 231 a .
  • the F 2 gas is supplied to the wafer 200 (F 2 gas supply).
  • the valves 243 d and 243 f are opened to supply a N 2 gas into the process chamber 201 via the nozzles 249 a and 249 c .
  • the supply of the N 2 gas may not be performed.
  • Processing temperature room temperature to 550 degrees C. or room temperature to 450 degrees C. in some embodiments.
  • conditions may be similar to the processing conditions of step B.
  • the conditions described herein are conditions under which the respective surfaces of the base 200 b and the protective film 200 e are not etched, and conditions under which the respective surfaces of the base 200 b and the protective film 200 e are modified (F-terminated), as will be described later.
  • the respective surfaces of the base 200 b and the protective film 200 e can be modified without etching by reacting Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e and the F 2 gas with each other.
  • the protective film 200 e since the surface of the base 200 c is protected by the protective film 200 e , it is possible to prevent the F 2 gas from being brought into contact with the surface of the base 200 c . Thus, it is possible to avoid the etching damage to the surface of the base 200 c .
  • the modified base 200 b and protective film 200 e include F-terminated (SiF-terminated) surfaces.
  • the base 200 b and the protective film 200 e include F-terminated surfaces, respectively.
  • the base 200 b and the protective film 200 e include SiF-terminated surfaces, respectively.
  • the former name will be mainly used.
  • the respective surfaces of the base 200 b and the protective film 200 e can be selectively (preferentially) modified while suppressing the modification of the surface of the base 200 a .
  • a portion of the surface of the base 200 a may be modified, but the amount of the modification is smaller than the amount of the modification of the respective surfaces of the base 200 b and the protective film 200 e .
  • Such selective (preferential) modification is possible because Si is not adsorbed on many regions of the surface of the base 200 a after step B is performed, whereas Si is adsorbed on the entire region of the respective surfaces of the base 200 b and the protective film 200 e .
  • Si Since Si is not adsorbed in many regions of the surface of the base 200 a , the reaction between Si and F 2 is not performed, and as a result, the F-termination is not formed in such many regions. However, as described above, Si may be adsorbed on the partial region of the surface of the base 200 a , and in that case, the F-termination may be formed on such partial region. On the other hand, on the entire region of the respective surfaces of the base 200 b and the protective film 200 e , Si adsorbed on the surfaces reacts with F 2 to generate an F-containing radical, and a very stable F-termination (SiF-termination) is formed on the entire region of the surfaces thereof by the action of such radical.
  • the F-containing radical may include F, SiF, SiF 2 , SiF 3 , SiHF, SiH 2 F, SiHF 2 , and the like.
  • the amounts of Si adsorbed on the base 200 b and the protective film 200 e at step B are set to be substantially uniform over the entire region of the respective surfaces of the base 200 b and the protective film 200 e . Therefore, at this step, the amounts of the F-containing radical generated on the respective surfaces of the base 200 b and the protective film 200 e become substantially uniform over the entire in-plane region thereof. As a result, the modification of the base 200 b and the protective film 200 e described above is performed substantially uniformly over the entire region of the surfaces thereof.
  • Si is not adsorbed in many regions of the surface of the base 200 a as described above, the reaction between Si and F 2 is not performed, no F-containing radical is generated, and such many regions are not modified.
  • Si and F 2 react with each other in the partial region thereof to generate the F-containing radical, and the partial region thereof may be modified, as described above.
  • the surface of the base 200 a is hardly damaged by etching, and adsorption sites are kept in many regions of the surface.
  • the fluorine-containing gas it may be possible to use, in addition to the F 2 gas, a chlorine trifluoride (ClF 3 ) gas, a chlorine fluoride gas (ClF) gas, an F 2 +nitric oxide (NO) gas, a ClF+NO gas, a nitrogen trifluoride (NF 3 ) gas, a tungsten hexafluoride (WF 6 ) gas, a nitrosyl fluoride (FNO) gas, or a mixed gas thereof.
  • a chlorine trifluoride (ClF 3 ) gas a chlorine fluoride gas (ClF) gas
  • an F 2 +nitric oxide (NO) gas a ClF+NO gas
  • NF 3 nitrogen trifluoride
  • WF 6 tungsten hexafluoride
  • FNO nitrosyl fluoride
  • valve 243 a is opened to allow a SiCl 4 gas to flow into the gas supply pipe 232 a .
  • the flow rate of the SiCl 4 gas is adjusted by the MFC 241 a .
  • the SiCl 4 gas is supplied into the process chamber 201 via the nozzle 249 a and is exhausted from the exhaust port 231 a .
  • the SiCl 4 gas is supplied to the wafer 200 (SiCl 4 gas supply).
  • the valves 243 e and 243 f may be opened to supply an N 2 gas into the process chamber 201 via the nozzles 249 b and 249 c , respectively.
  • SiCl 4 gas supply flow rate 1 to 2,000 sccm or 10 to 1,000 sccm in some embodiments
  • SiCl 4 gas supply time 1 to 180 seconds or 10 to 120 seconds in some embodiments
  • Processing temperature 350 to 600 degrees C. or 400 to 550 degrees C. in some embodiments
  • Processing pressure 1 to 2,000 Pa or 10 to 1,333 Pa in some embodiments.
  • the Si-containing layer containing Cl is formed by physisorption or chemisorption of SiCl 4 on the surface of the base 200 a , chemisorption of a substance (SiCl x ) in which a portion of SiCl 4 is decomposed, deposition of Si by pyrolysis of SiCl 4 , or the like.
  • the Si-containing layer containing Cl may be an adsorption layer of SiCl 4 or SiCl x (a physisorption layer or a chemisorption layer), or may be a deposit layer of Si containing Cl. In the present disclosure, the Si-containing layer containing Cl will be simply referred to as a Si-containing layer.
  • the Si-containing layer can be selectively formed on the surface of the base 200 a while suppressing the formation of the Si-containing layer on the respective surfaces of the base 200 b and the protective film 200 e .
  • the Si-containing layer may be very slightly formed on the respective surfaces of the base 200 b and the protective film 200 e , but also in this case, the thickness of the Si-containing layer formed on the respective surfaces of the base 200 b and the protective film 200 e becomes much smaller than the thickness of the Si-containing layer formed on the surface of the base 200 a .
  • the valve 243 a is closed to stop the supply of the SiCl 4 gas into the process chamber 201 . Then, the gas or the like, which remains within the process chamber 201 , is removed from the interior of the process chamber 201 according to the same processing procedures as those of the purge at step A (purge).
  • a chlorosilane-based gas such as a monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, a dichlorosilane (SiH 2 Cl 2 , abbreviation: DCS) gas, a trichlorosilane (SiHCl 3 , abbreviation: TCS) gas, a hexachlorodisilane (Si 2 Cl 6 , abbreviation: HCDS) gas, an octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas or the like, a bromosilane-based gas such as a tetrabromosilane (SiBr 4 ) gas or the like, or an iodosilane-based gas such as a tetraiodosilane (SiI 4 ) gas
  • MCS monochlorosilane
  • DCS dichlorosilane
  • TCS
  • processing conditions may be similar to the processing conditions of step B.
  • the N 2 gas as a purge gas is supplied from each of the nozzles 249 a to 249 c into the process chamber 201 and is exhausted from the exhaust port 231 a .
  • the interior of the process chamber 201 is purged and the gas or the reaction byproduct, which remains within the process chamber 201 , is removed from the interior of the process chamber 201 (after-purge).
  • the internal atmosphere of the process chamber 201 is substituted by an inert gas (inert gas substitution).
  • the internal pressure of the process chamber 201 is returned to an atmospheric pressure (atmospheric pressure return).
  • the seal cap 219 is moved down by the boat elevator 115 to open the lower end of the manifold 209 . Then, the processed wafers 200 supported on the boat 217 are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After the boat unloading, the shutter 219 s is moved so that the lower end opening of the manifold 209 is sealed by the shutter 219 s via the O-ring 220 c (shutter closing). The processed wafers 200 are unloaded to the outside of the reaction tube 203 and are subsequently discharged from the boat 217 (wafer discharging).
  • the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e are dissociated by reacting with a predetermined reaction product, specifically, moisture (H 2 O) in the atmosphere, when the processed wafers 200 are exposed to the atmosphere. That is, the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e can be removed by the exposure of the processed wafers 200 to the atmosphere.
  • a predetermined reaction product specifically, moisture (H 2 O) in the atmosphere
  • the respective surface states of the base 200 b and the protective film 200 e are reset, and the film-forming process can be performed on the respective surfaces of the base 200 b and the protective film 200 e at a subsequent step.
  • steps A to D By performing steps A to D, it becomes possible to selectively form the SiN film on the surface of the base 200 a among the bases 200 a , 200 b , and 200 c exposed on the surface of the wafer 200 .
  • This makes it possible to simplify their processes, such as omitting a patterning process including photolithography, for example, when manufacturing a semiconductor device. As a result, it is possible to improve the productivity of the semiconductor device and to reduce the manufacturing cost.
  • the natural oxide film (SiO film) formed on the surface of the base 200 c before the DHF cleaning is used as the protective film.
  • the natural oxide film has a non-uniform thickness
  • the surface of the base 200 c may be etched and damaged by etching by bringing the F 2 gas into contact with the base 200 c in a portion where the film thickness of the natural oxide film is small at step C.
  • the film thickness of the protective film 200 e is as small as about 10 ⁇ , it may not be necessary to perform the step of removing the protective film 200 e after the selective growth is completed. In this case, since the manufacturing process of the semiconductor device can be simplified, it is possible to improve the productivity of the semiconductor device and to reduce the manufacturing cost. However, when the SiO film formed as the protective film 200 e influences the device characteristics or the like, it is desirable to remove the protective film 200 e . In that case, it is possible to remove the protective film 200 e by, for example, DHF cleaning or the like.
  • the amounts of Si selectively (preferentially) adsorbed on the base 200 b and the protective film 200 e can be set to be substantially uniform over the entire region of the respective surfaces of the base 200 b and the protective film 200 e .
  • step D By exposing the processed wafer 200 to the atmosphere after performing step D, it is possible to eliminate the F-terminations as inhibitors existing on the respective surfaces of the base 200 b and the protective film 200 e . As described above, since the F-terminations can be easily removed, it is may not be necessary to separately prepare a step of removing the inhibitors. Thus, it is possible to simplify the manufacturing process of the semiconductor device, to improve the productivity of the semiconductor device, and to reduce the manufacturing cost.
  • the F-containing radical is generated by supplying the F-containing gas in an atmosphere in which a pseudo catalyst exists and the respective surfaces of the base 200 b and the protective film 200 e may be modified without etching using the F-containing radical thus generated. That is, at step C, the F-containing radical is generated by supplying the F-containing gas into the process chamber 201 accommodating the pseudo catalyst, and the respective surfaces of the base 200 b and the protective film 200 e among the bases 200 a and 200 b and the protective film 200 e may be selectively (preferentially) modified without etching by supplying the radical thus generated to the surface of the wafer 200 . In this case, step B cannot be performed.
  • the term “pseudo catalyst” herein refers to a substance of promoting the decomposition of the F-containing gas and urging the generation of the F-containing radical from the F-containing gas.
  • the generation of the F-containing radical from the F-containing gas can be promoted by the pseudo catalytic action occurring by bringing the F-containing gas into contact with the pseudo catalyst to efficiently generate the F-containing radical.
  • the F-containing radical can be efficiently generated by bringing the F-containing gas into contact with the bare wafer as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e .
  • the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e .
  • the same effects as those of the aforementioned embodiments may be achieved. Furthermore, by supplying the F-containing gas in an atmosphere in which the pseudo catalyst exists at step C, it is possible to increase the amount of the F-containing radical generated by more promoting the generation of the F-containing radical in the process chamber 201 than in the case where the F-containing gas is supplied in an atmosphere in which the pseudo catalyst does not exist. As a result, by promoting the modification of the respective surfaces of the base 200 b and the protective film 200 e at step C, it is possible to appropriately perform the selective formation of the SiN film on the surface of the base 200 a . Moreover, by using the pseudo catalyst, it is possible to lower the processing temperature at step C, and to effectively suppress the etching of the surface of the base 200 a or the etching damage to the surface of the base 200 a at step C.
  • a plate made of Si Si plate
  • a chip made of Si Si chip
  • a piece made of Si Si piece
  • a block made of Si Si block
  • a Si film is formed (precoated) in advance on the surface of any member (the inner wall of the reaction tube 203 , the surface of the boat 217 , or the like) in the process chamber 201 , and this Si film (precoated film) may also be used as the pseudo catalyst.
  • the Si film as the precoated film may be formed, for example, by using a silane-based gas such as a monosilane (SiH 4 ) gas or the like and by a CVD method.
  • the Si film may be a Si film in an amorphous (non-crystalline) state, a Si film in a poly (polycrystalline) state, or a Si film in a mixed state of amorphous and polycrystal.
  • the F-containing radical can be efficiently generated by bringing the F-containing gas into contact with the Si film (precoated film) as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to the base 200 b and the protective film 200 e .
  • the F-containing radical efficiently generated in this way can be efficiently supplied to the base 200 b and the protective film 200 e .
  • a SiN film a silicon carbide film (SiC film), a silicon carbonitride film (SiCN film), a silicon-rich SiN film (SiRN film), a silicon-rich SiC film (SiRC film), a silicon-rich SiCN film (SiRCN film), or the like may be used as the precoated film. That is, in addition to Si, a Si-containing film containing C or N may be used as the precoated film.
  • the processing conditions at this time may be similar to the processing conditions when forming the Si film as the precoated film described above.
  • the aminosilane-based gas is a gas containing Si and an amino group, and may be a gas containing at least Si, N, and C as constituent elements.
  • the F-containing radical can be efficiently generated by bringing the F-containing radicals into contact with the SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, or the SiRCN film (precoated film) as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e .
  • the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e .
  • the processing procedures and processing conditions in the selective growth when these precoated films are used as the pseudo catalysts may be similar to the processing procedures and processing conditions of the aforementioned embodiments except that these films are precoated on the surface of any member in the process chamber 201 and step B is not performed. As described above, even when the precoated film is used as the pseudo catalyst, the same effects as those when the bare wafer is used as the pseudo catalyst may be achieved.
  • the precoated film in this case may be referred to as a pseudo catalyst film or a pseudo catalyst precoated film.
  • a gas and processing conditions used when forming the Si film, the SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, or the SiRCN film as the pseudo catalyst film may be similar to the gas and the processing conditions used when forming the precoated film described above.
  • the generation of the F-containing radical from the F-containing gas may be promoted by activation (excitation) of the F-containing gas by plasma, heating, light irradiation, or the like. Even in these cases, the same effects as those of the aforementioned embodiments may be achieved. Furthermore, at step C, the generation of the F-containing radical in the process chamber 201 may be promoted by activating the F-containing gas by plasma, heating, light irradiation, or the like, compared with the case where the F-containing gas is not activated by these, making it possible to increase the amount of the F-containing radical to be generated.

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Abstract

There is method of processing a substrate comprising: (a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and (c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)
This application is a continuation of U.S. Ser. No. 16/943,150, filed Jul. 30, 2020 which is based upon and claims benefit of priority from Japanese Patent Application No. 2019-140991, filed on Jul. 31, 2019, the entire contents of which are incorporated herein by reference.
TECHNICAL FIELD
The present disclosure relates to a method of manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium.
BACKGROUND
As an example of processes of manufacturing a semiconductor device, a process of forming a film by selectively growing it on a surface of a specific base among a plurality of kinds of bases exposed on a surface of a substrate (hereinafter, referred to as selective growth or selective film formation) is often carried out.
SUMMARY
The present disclosure provides some embodiments of a technique capable of enhancing a selectivity in the selective growth described above while suppressing damage to a surface of a base.
According to one or more embodiments of the present disclosure, there is provided a technique that includes (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.
BRIEF DESCRIPTION OF DRAWINGS
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure.
FIG. 1 is a schematic configuration view of a vertical type process furnace of a substrate processing apparatus suitably used in embodiments of the present disclosure, in which a portion of a process furnace 202 is shown in a vertical cross sectional view.
FIG. 2 is a schematic configuration view of a vertical type process furnace of the substrate processing apparatus suitably used in embodiments of the present disclosure, in which a portion of the process furnace 202 is shown in a cross sectional view taken along line A-A in FIG. 1 .
FIG. 3 is a schematic configuration view of a controller 121 of the substrate processing apparatus suitably used in embodiments of the present disclosure, in which a control system of the controller 121 is shown in a block diagram.
FIG. 4 is a view illustrating a process sequence in selective growth according to embodiments of the present disclosure.
FIG. 5A is a partial enlarged cross sectional view of a surface of a wafer 200 before a cleaning process, FIG. 5B is a partial enlarged cross sectional view of the surface of the wafer 200 after the cleaning process in which a base 200 a containing a silicon nitride film, a base 200 b containing a silicon oxide film, and a base 200 c containing silicon are each exposed on its surface, FIG. 5C is a partial enlarged cross sectional view of the surface of the wafer 200 after a protective film 200 e is formed on a surface of the base 200 c by supplying an oxygen-containing gas, FIG. 5D is a partial enlarged cross sectional view of the surface of the wafer 200 after silicon is selectively adsorbed on respective surfaces of the base 200 b and the protective film 200 e by supplying an aminosilane-based gas, FIG. 5E is a partial enlarged cross sectional view of the surface of the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e, on which the silicon is adsorbed, are selectively modified by supplying a fluorine-containing gas, FIG. 5F is a partial enlarged cross sectional view of the surface of the wafer 200 after a silicon nitride film is selectively formed on a surface of the base 200 a, and FIG. 5G is a partial enlarged cross sectional view of the surface of the wafer 200 after the wafer 200 illustrated in FIG. 5F is exposed to the atmosphere.
 DETAILED DESCRIPTION
Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.
One or More Embodiments of the Present Disclosure
Embodiments of the present disclosure will now be described mainly with reference to FIGS. 1 to 4 .
(1) Configuration of the Substrate Processing Apparatus
As illustrated in FIG. 1 , a process furnace 202 includes a heater 207 as a heating mechanism (temperature adjustment part). The heater 207 has a cylindrical shape and is supported by a holding plate so as to be vertically installed. The heater 207 functions as an activation mechanism (an excitation part) configured to thermally activate (excite) a gas.
A reaction tube 203 is disposed inside the heater 207 to be concentric with the heater 207.
The reaction tube 203 is composed of a heat resistant material, e.g., quartz (SiO2), silicon carbide (SiC) or the like, and has a cylindrical shape with its upper end closed and its lower end opened. A manifold 209 is disposed below the reaction tube 203 in a concentric relationship with the reaction tube 203. The manifold 209 is composed of a metal material, e.g., stainless steel (SUS), and has a cylindrical shape with its upper and lower ends opened. The upper end of the manifold 209 engages with the lower end of the reaction tube 203. The manifold 209 is configured to support the reaction tube 203. An O-ring 220 a as a seal is installed between the manifold 209 and the reaction tube 203. Similar to the heater 207, the reaction tube 203 is vertically installed. A processing vessel (reaction vessel) mainly includes the reaction tube 203 and the manifold 209. A process chamber 201 is formed in a hollow cylindrical portion of the processing vessel. The process chamber 201 is configured to accommodate wafers 200 as substrates. The process to the wafers 200 is performed in the process chamber 201.
Nozzles 249 a to 249 c as first to third supply parts are installed in the process chamber 201 to penetrate a sidewall of the manifold 209. The nozzles 249 a to 249 c will be referred to as first to third nozzles, respectively. The nozzles 249 a to 249 c are each composed of a heat resistant material such as quartz, SiC, or the like. Gas supply pipes 232 a to 232 c are connected to the nozzles 249 a to 249 c, respectively. The nozzles 249 a to 249 c are different nozzles, in which each of the nozzles 249 a and 249 c is installed adjacent to the nozzle 249 b.
Mass flow controllers (MFCs) 241 a to 241 c, which are flow rate controllers (flow rate control parts), and valves 243 a to 243 c, which are opening/closing valves, are installed in the gas supply pipes 232 a to 232 c sequentially from the upstream sides of gas flow, respectively. Gas supply pipes 232 d to 232 h are connected to the gas supply pipes 232 a to 232 c at the downstream side of the valves 243 a to 243 c, respectively. MFCs 241 d to 241 h and valves 243 d to 243 h are installed in the gas supply pipes 232 d to 232 h sequentially from the upstream sides of gas flow, respectively. The gas supply pipes 232 a to 232 h are each composed of a metal material such as, e.g., stainless steel (SUS) or the like.
As illustrated in FIG. 2 , the nozzles 249 a to 249 c are each disposed in a space with an annular shape in a plane view between the inner wall of the reaction tube 203 and the wafers 200 such that the nozzles 249 a to 249 c extend upward along an arrangement direction of the wafers 200 from a lower portion of the inner wall of the reaction tube 203 to an upper portion of the inner wall of the reaction tube 203. Specifically, the nozzles 249 a to 249 c are installed at a lateral side of a wafer arrangement region in which the wafers 200 are arranged, namely in a region which horizontally surrounds the wafer arrangement region, to extend along the wafer arrangement region. The nozzle 249 b is disposed to face an exhaust port 231 a, which will be described later, on a straight line in a plane view, with the centers of the wafers 200 carried into the process chamber 201 interposed therebetween. The nozzles 249 a and 249 c are disposed to sandwich a straight line L passing through the nozzle 249 b and the center of the exhaust port 231 a from both sides along the inner wall of the reaction tube 203 (the outer peripheral portion of the wafers 200). The straight line L is also a straight line passing through the nozzle 249 b and the centers of the wafers 200. That is, it may be said that the nozzle 249 c is installed at the opposite side of the nozzle 249 a with the straight line L interposed therebetween. The nozzles 249 a and 249 c are disposed in line symmetry with the straight line L as a symmetry axis. Gas supply holes 250 a to 250 c for supplying a gas are installed on the side surfaces of the nozzles 249 a to 249 c, respectively. The gas supply holes 250 a to 250 c are opened to face the exhaust port 231 a in a plane view, so as to allow a gas to be supplied toward the wafers 200. The gas supply holes 250 a to 250 c may be formed in a plural number between the lower portion of the reaction tube 203 and the upper portion of the reaction tube 203.
A gas, which contains silicon (Si) as a main element constituting a film to be formed on each of the wafers 200 and a halogen element, i.e., a halosilane-based gas, is supplied from the gas supply pipe 232 a into the process chamber 201 via the MFC 241 a, the valve 243 a, and the nozzle 249 a. The halosilane-based gas acts as a film-forming gas, i.e., a Si source (precursor gas). The halogen element includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), and the like. As the halosilane-based gas, it may be possible to use, for example, a chlorosilane-based gas containing Si and Cl, for example, a silicon tetrachloride (SiCl4) gas.
A fluorine (F)-containing gas is supplied from the gas supply pipe 232 b into the process chamber 201 via the MFC 241 b, the valve 243 b, and the nozzle 249 b. As the fluorine-containing gas, it may be possible to use, for example, a fluorine (F2) gas.
A hydrogen nitride-based gas, which is a nitrogen (N)-containing gas, is supplied from the gas supply pipe 232 c into the process chamber 201 via the MFC 241 c, the valve 243 c, and the nozzle 249 c. The hydrogen nitride-based gas acts as a film-forming gas, i.e., a N source (a nitriding gas or a nitriding agent). As the hydrogen nitride-based gas, it may be possible to use, for example, an ammonia (NH3) gas.
An aminosilane-based gas, which is a gas containing Si and an amino group, is supplied from the gas supply pipe 232 g into the process chamber 201 via the MFC 241 g, the valve 243 g, the gas supply pipe 232 c, and the nozzle 249 c.
As the aminosilane-based gas, it may be possible to use, for example, a monoaminosilane (SiH3R) gas which is a precursor containing one amino group in a composition formula (in one molecule). R refers to an amino group in which one or two hydrocarbon groups containing one or more C atoms are coordinated to one N atom (the one in which one or both of H of an amino group represented by NH2 is substituted by a hydrocarbon group containing one or more C atoms). When two hydrocarbon groups each constituting a portion of the amino group are coordinated to one N, the two hydrocarbon groups may be the same hydrocarbon group or different hydrocarbon groups.
Furthermore, the hydrocarbon group may contain an unsaturated bond such as a double bond or a triple bond. Moreover, the amino group may have a cyclic structure. Since the amino group is bonded to Si, which is the central atom of the SiH3R molecule, this amino group will also be referred to as a ligand or an amino ligand.
As the SiH3R gas, it may be possible to use, for example, an ethylmethylaminosilane (SiH3[N(CH3)(C2H5)]) gas, a dimethylaminosilane (SiH3[N(CH3)2]) gas, a diisopropylaminosilane (SiH3[N(C3H7)2]) gas, a disecondary butylaminosilane (SiH3[H(C4H9)2]) gas, a dimethylpiperidinosilane (SiH3[NC5H8(CH3)2]) gas, or a diethylpiperidinosilane (SiH3[NC5H8(C2H5)2]) gas.
An oxygen (O)-containing gas is supplied from the gas supply pipe 232 h into the process chamber 201 via the MFC 241 h, the valve 243 h, the gas supply pipe 232 a, and the nozzle 249 a. The O-containing gas acts as a processing gas, i.e., an oxidizing agent. As the O-containing gas, it may be possible to use, for example, an oxygen (O2) gas.
An inert gas, for example, a nitrogen (N2) gas, is supplied from the gas supply pipes 232 d to 232 f into the process chamber 201 via the MFCs 241 d to 241 f, the valves 243 d to 243 f, the gas supply pipes 232 a to 232 c, and the nozzles 249 a to 249 c. The N2 gas acts as a purge gas, a carrier gas, a dilution gas, or the like.
A film-forming gas supply system (a precursor gas supply system or a reaction gas supply system) mainly includes the gas supply pipes 232 a and 232 c, the MFCs 241 a and 241 c, and the valves 243 a and 243 c. A processing gas supply system (an oxygen-containing gas supply system) mainly includes the gas supply pipe 232 h, the MFC 241 h, and the valve 243 h. An aminosilane-based gas supply system mainly includes the gas supply pipe 232 g, the MFC 241 g, and the valve 243 g. A fluorine-containing gas supply system mainly includes the gas supply pipe 232 b, the MFC 241 b, and the valve 243 b. An inert gas supply system mainly includes the gas supply pipes 232 d to 232 f, the MFCs 241 d to 241 f, and the valves 243 d to 243 f.
One or more of various supply systems described above may be configured as an integrated supply system 248 in which the valves 243 a to 243 h, the MFCs 241 a to 241 h, and the like are integrated. The integrated supply system 248 is connected to each of the gas supply pipes 232 a to 243 h so that a supply operation of various kinds of gases into the gas supply pipes 232 a to 232 h, i.e., an opening/closing operation of the valves 243 a to 243 h, a flow-rate-adjusting operation by the MFCs 241 a to 241 h or the like, is controlled by a controller 121 which will be described later. The integrated supply system 248 is configured as an integral type or division type integrated unit, and is also configured so that it is detachable from the gas supply pipes 232 a to 232 h or the like, so as to perform maintenance, replacement, expansion, or the like of the integrated supply system 248, on an integrated unit basis.
The exhaust port 231 a configured to exhaust an internal atmosphere of the process chamber 201 is installed at a lower side of the sidewall of the reaction tube 203. As illustrated in FIG. 2 , the exhaust port 231 a is installed at a position facing the nozzles 249 a to 249 c (the gas supply holes 250 a to 250 c) in a plane view, with the wafers 200 interposed therebetween. The exhaust port 231 a may be installed between the lower portion of the sidewall of the reaction tube 203 and the upper portion of the sidewall of the reaction tube 203, i.e., along the wafer arrangement region. An exhaust pipe 231 is connected to the exhaust port 231 a. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector (pressure detection part) which detects the internal pressure of the process chamber 201 and an APC (auto pressure controller) valve 244 as a pressure regulator (pressure regulation part). The APC valve 244 is configured so that a vacuum exhaust and a vacuum exhaust stop of the interior of the process chamber 201 can be performed by opening and closing the APC valve 244 while operating the vacuum pump 246 and so that the internal pressure of the process chamber 201 can be adjusted by adjusting an opening degree of the APC valve 244 based on pressure information detected by the pressure sensor 245 while operating the vacuum pump 246. An exhaust system mainly includes the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may be regarded as being included in the exhaust system.
A seal cap 219, which serves as a furnace opening cover configured to hermetically seal a lower end opening of the manifold 209, is installed under the manifold 209. The seal cap 219 is composed of a metal material such as, e.g., stainless steel (SUS) or the like, and is formed in a disc shape. An O-ring 220 b, which is a seal making contact with the lower end portion of the manifold 209, is installed on an upper surface of the seal cap 219.
A rotator 267 configured to rotate a boat 217, which will be described later, is installed under the seal cap 219. A rotary shaft 255 of the rotator 267, which is composed of a metal material such as stainless steel or the like and penetrates the seal cap 219, is connected to the boat 217. The rotator 267 is configured to rotate the wafers 200 by rotating the boat 217. The seal cap 219 is configured to be vertically moved up and down by a boat elevator 115 which is an elevator mechanism installed outside the reaction tube 203. The boat elevator 115 is configured as a transfer device (transfer mechanism) which loads and unloads (transfers) the wafers 200 into and from (out of) the process chamber 201 by moving the seal cap 219 up and down.
A shutter 219 s as a furnace opening cover capable of hermetically seal the lower end opening of the manifold 209 while moving the seal cap 219 down to unload the boat 217 from the interior of the process chamber 201 is installed under the manifold 209. The shutter 219 s is composed of a metal material such as stainless steel or the like, and is formed in a disc shape. An O-ring 220 c as a seal making contact with the lower end portion of the manifold 209 is installed on an upper surface of the shutter 219 s. An opening/closing operation (an up-down movement operation or a rotational movement operation) of the shutter 219 s is controlled by a shutter-opening/closing mechanism 115 s.
The boat 217 serving as a substrate holder is configured to hold a plurality of wafers 200, e.g., 25 to 200 wafers, in such a state that the wafers 200 are arranged in a horizontal posture and in multiple stages along a vertical direction with the centers of the wafers 200 aligned with one another. That is, the boat 217 is configured to arrange the wafers 200 in a spaced-apart relationship. The boat 217 is composed of a heat resistant material such as quartz or SiC. Heat-insulating plates 218 composed of a heat resistant material such as quartz or SiC are installed below the boat 217 in multiple stages.
A temperature sensor 263 serving as a temperature detector is installed in the reaction tube 203. Based on temperature information detected by the temperature sensor 263, a degree of supplying electric power to the heater 207 is adjusted such that the interior of the process chamber 201 has a desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.
As illustrated in FIG. 3 , the controller 121, which is a control part (control means), may be configured as a computer including a CPU (central processing unit) 121 a, a RAM (random access memory) 121 b, a memory 121 c, and an I/O port 121 d. The RAM 121 b, the memory 121 c, and the I/O port 121 d are configured to exchange data with the CPU 121 a via an internal bus 121 e. An input/output device 122 formed of, e.g., a touch panel or the like, is connected to the controller 121.
The memory 121 c is configured by, for example, a flash memory, a HDD (hard disk drive), or the like. A control program for controlling operations of a substrate processing apparatus, a process recipe for specifying sequences and conditions of substrate processing as described hereinbelow, or the like is readably stored in the memory 121 c. The process recipe functions as a program for causing the controller 121 to execute each sequence in the substrate processing, as described hereinbelow, to obtain a predetermined result. Hereinafter, the process recipe and the control program will be generally and simply referred to as a “program.” Furthermore, the process recipe will be simply referred to as a “recipe.” When the term “program” is used herein, it may indicate a case of including the recipe, a case of including the control program, or a case of including both the recipe and the control program. The RAM 121 b is configured as a memory area (work area) in which a program, data, and the like read by the CPU 121 a is temporarily stored.
The I/O port 121 d is connected to the MFCs 241 a to 241 h, the valves 243 a to 243 h, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the heater 207, the rotator 267, the boat elevator 115, the shutter-opening/closing mechanism 115 s, and the like, as described above.
The CPU 121 a is configured to read the control program from the memory 121 c and execute the same. The CPU 121 a is also configured to read the recipe from the memory 121 c according to an input of an operation command from the input/output device 122. In addition, the CPU 121 a is configured to control, according to the contents of the recipe thus read, the flow-rate-adjusting operation of various kinds of gases by the MFCs 241 a to 241 h, the opening/closing operation of the valves 243 a to 243 h, the opening/closing operation of the APC valve 244, the pressure-regulating operation performed by the APC valve 244 based on the pressure sensor 245, the driving and stopping of the vacuum pump 246, the temperature-adjusting operation performed by the heater 207 based on the temperature sensor 263, the operations of rotating the boat 217 and adjusting the rotation speed of the boat 217 with the rotator 267, the operation of moving the boat 217 up and down with the boat elevator 115, the operation of opening and closing the shutter 219 s with the shutter-opening/closing mechanism 115 s, and the like.
The controller 121 may be configured by installing, on the computer, the aforementioned program stored in an external memory 123. The external memory 123 may include, for example, a magnetic disc such as a HDD, an optical disc such as a CD, a magneto-optical disc such as a MO, a semiconductor memory such as a USB memory, and the like. The memory 121 c or the external memory 123 is configured as a computer-readable recording medium. Hereinafter, the memory 121 c and the external memory 123 will be generally and simply referred to as a “recording medium.” When the term “recording medium” is used herein, it may indicate a case of including the memory 121 c, a case of including the external memory 123, or a case of including both the memory 121 c and the external memory 123. Furthermore, the program may be supplied to the computer by using a communication means such as the Internet or a dedicated line, instead of using the external memory 123.
(2) Substrate-Processing Process
A process sequence example of selective growth (selective film formation) in which a film is formed by selectively growing it on a surface of a specific base among a plurality of kinds of bases exposed on a surface a wafer 200 as a substrate using the aforementioned substrate processing apparatus, which is one of the processes for manufacturing a semiconductor device, will be described mainly with reference to FIGS. 4, and 5A to 5G. In the following descriptions, the operations of the respective parts constituting the substrate processing apparatus are controlled by the controller 121.
In the process sequence illustrated in FIG. 4 , there are performed: step A of forming a SiO film as a protective film 200 e on a surface of a base 200 c by supplying an O2 gas as a processing gas to a wafer 200 in which an O-free first base (base 200 a) including a silicon nitride film (SiN film), an O-containing second base (base 200 b) including a silicon oxide film (SiO film), and an O- and N-free third base (base 200 c) including a single crystalline silicon (Si) are exposed on its surface; step B of adsorbing Si contained in a SiH3R gas on respective surfaces of the base 200 b and the protective film 200 e by supplying the SiH3R gas as an aminosilane-based gas to the wafer 200 after the protective film 200 e is formed on the surface of the base 200 c; step C of modifying the surfaces of the base 200 b and the protective film 200 e by supplying an F2 gas as a fluorine-containing gas to the wafer 200 after Si is adsorbed on the respective surfaces of the base 200 b and the protective film 200 e to react Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e with the F2 gas; and step D of selectively forming a SiN film which is a film containing Si and N as a film on the surface of the base 200 a by supplying a SiCl4 gas and an NH3 gas as film-forming gases to the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e are modified.
Furthermore, in FIG. 4 , an example in which at step D, a cycle which non-simultaneously performs step D1 of supplying the SiCl4 gas to the wafer 200 and step D2 of supplying the NH3 gas to the wafer 200 is implemented a predetermined number of times (n times, where n is an integer of 1 or more) is illustrated.
In the present disclosure, for the sake of convenience, the process sequence described above may sometimes be denoted as follows. The same denotation will be used in other embodiments as described hereinbelow.
O2→SiH3R→F2→(SiCl4→NH3)×n⇒SiN
When the term “wafer” is used herein, it may refer to a wafer itself or a laminated body of a wafer and a predetermined layer or film formed on the surface of the wafer. In addition, when the phrase “a surface of a wafer” is used herein, it may refer to a surface of a wafer itself or a surface of a predetermined layer or the like formed on a wafer. Furthermore, in the present disclosure, the expression “a predetermined layer is formed on a wafer” may mean that a predetermined layer is directly formed on a surface of a wafer itself or that a predetermined layer is formed on a layer or the like formed on a wafer. In addition, when the term “substrate” is used herein, it may be synonymous with the term “wafer.”
(Wafer Charging and Boat Loading)
If a plurality of wafers 200 is charged on the boat 217 (wafer charging), the shutter 219 s is moved by the shutter-opening/closing mechanism 115 s to open the lower end opening of the manifold 209 (shutter opening). Thereafter, as illustrated in FIG. 1 , the boat 217 supporting the plurality of wafers 200 is lifted up by the boat elevator 115 and is loaded into the process chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220 b.
As illustrated in FIG. 5A, a plurality of kinds of bases, for example, a base 200 a including a SiN film as a nitride film which is an O-free film, i.e., a non-oxide film, a base 200 b including a SiO film as an O-containing film, i.e., an oxide film, and a base 200 c including a single crystalline Si as an O- and N-free substance are exposed in advance on a surface of a wafer 200. That is, an example in which the base 200 a is composed of a SiN film which is an insulating substance (insulator), the base 200 b is composed of a SiO film which is an insulating substance (insulator), and the base 200 c is composed of a single crystalline Si which is a semiconductor substance is illustrated in the present disclosure. Furthermore, as illustrated in FIG. 5A, when natural oxide films 200 d are formed on the surface of the wafer 200, for example, a cleaning process (DHF cleaning) using a diluted hydrofluoric acid (DHF) aqueous solution, i.e., a hydrogen fluoride (HF) aqueous solution, is performed on the wafer 200 in advance, i.e., before boat loading, to remove the natural oxide films 200 d formed on the surface of the wafer 200 (natural oxide film removal). Specifically, by performing DHF cleaning on the wafer 200 to remove the natural oxide films 200 d formed on the surface of the base 200 a as illustrated in FIG. 5B, the material of the base 200 a, i.e., the SiN film, is exposed on the uppermost surface of the base 200 a. Thus, uniform processing can be performed on the surface of the base 200 a at step D as described hereinbelow. When removing the natural oxide films 200 d formed on the surface of the base 200 a, the natural oxide films 200 d formed on the surface of the base 200 c exposed on the surface of the wafer 200 are also removed, and the material of the base 200 c, i.e., the single crystalline Si, is also exposed on the outermost surface of the base 200 c. Thus, uniform processing can be performed on the surface of the base 200 c at step A as described hereinbelow.
(Pressure Regulation and Temperature Adjustment)
The interior of the process chamber 201, namely the space in which the wafers 200 are located, is vacuum-exhausted (depressurization-exhausted) by the vacuum pump 246 so as to reach a desired pressure (degree of vacuum). In this operation, the internal pressure of the process chamber 201 is measured by the pressure sensor 245. The APC valve 244 is feedback-controlled based on the measured pressure information. Furthermore, the wafers 200 in the process chamber 201 are heated by the heater 207 to a desired processing temperature. In this operation, the degree of supplying electric power to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 such that the interior of the process chamber 201 has a desired temperature distribution. In addition, the rotation of the wafers 200 by the rotator 267 begins. The exhaust of the interior of the process chamber 201 and the heating and rotation of the wafers 200 may be continuously performed at least until the process to the wafers 200 is completed.
(Selective Growth)
Next, the following steps A to D are sequentially performed.
[Step A]
At this step, an O2 gas is supplied to the wafer 200 in the process chamber 201, namely the wafer 200 in which the base 200 a, the base 200 b, and the base 200 c are exposed on its surface, as illustrated in FIG. 5B.
Specifically, the valve 243 h is opened to allow an O2 gas to flow through the gas supply pipe 232 h. The flow rate of the O2 gas is adjusted by the MFC 241 h. The O2 gas is supplied into the process chamber 201 via the gas supply pipe 232 a and the nozzle 249 a and is exhausted from the exhaust port 231 a. At this time, the O2 gas is supplied to the wafer 200 (O2 gas supply). Simultaneously, the valves 243 e and 243 f are opened to supply an N2 gas into the process chamber 201 via the nozzles 249 b and 249 c, respectively. The supply of the N2 gas may not be performed.
The examples of the processing conditions at this step may be described as follows:
    • O2 gas supply flow rate: 10 to 10,000 sccm or 100 to 10,000 sccm in some embodiments
    • O2 gas supply time: 1 to 180 seconds or 1 to 60 seconds in some embodiments
    • N2 gas supply flow rate (per gas supply pipe): 0 to 10,000 sccm or 100 to 10,000 sccm in some embodiments
Processing temperature: room temperature to 600 degrees C. or 50 to 550 degrees C. in some embodiments
Processing pressure: 1 to atmospheric pressure (101,325 Pa), 10 to 5,000 Pa in some embodiments, or 100 to 1,000 Pa in some embodiments.
The conditions described herein are conditions under which the base 200 c is oxidized without oxidizing the surface of the base 200 a.
Furthermore, in the present disclosure, the expression of the numerical range such as “1 to 101,325 Pa” may mean that a lower limit value and an upper limit value are included in that range. Therefore, for example, “1 to 101,325 Pa” may mean “1 Pa or higher and 101,325 Pa or lower.” The same applies to other numerical ranges.
By supplying the O2 gas to the wafer 200 under the aforementioned conditions, as illustrated in FIG. 5C, the surface of the base 200 c can be selectively (preferentially) oxidized while suppressing the oxidation of the surface of the base 200 a. By oxidizing the surface of the base 200 c, a SiO film is formed as the protective film 200 e on the surface of the base 200 c. At this time, since the base 200 b is composed of a SiO film, the surface of the base 200 b is not oxidized and the protective film 200 e is not newly formed on the surface. Such selective (preferential) oxidation is possible because the processing conditions at this step are set to conditions under which the surface of the base 200 a is not oxidized, i.e., conditions under which an oxide film (SiO film or SiON film) is not formed on the surface of the base 200 a. At this step, by performing dry oxidation under the conditions under which the surface of the base 200 a is not oxidized, the surface of the base 200 c can be selectively oxidized, i.e., the SiO film as the protective film 200 e can be selectively formed on the surface of the base 200 c. Furthermore, at this step, the film thickness controllability and film thickness uniformity of the protective film 200 e formed on the surface of the base 200 c can be enhanced by oxidizing the surface of the base 200 c under a pressure condition less than an atmospheric pressure (in a vacuum atmosphere or a decompressed atmosphere).
The protective film 200 e formed on the surface of the base 200 c functions as a film for protecting the base 200 c when a F2 gas is supplied at step C as described hereinbelow. When the F2 gas is brought into contact with the surface of the base 200 c at step C as described hereinbelow, the surface of the base 200 c may be etched and damaged by etching. By forming the protective film 200 e on the surface of the base 200 c, it is possible to prevent the F2 gas from being brought into contact with the surface of the base 200 c at step C. Therefore, it is possible to suppress the etching of the surface of the base 200 c and to suppress the etching damage to the surface of the base 200 c. In addition, the protective film 200 e does not adversely affect each processing at steps B and C.
The film thickness of the protective film 200 e formed at this step is about 10 Å, which is smaller than the film thickness of the natural oxide films 200 d formed on the surface of the base 200 c before the DHF cleaning. Even if the film thickness of the protective film 200 e is small as described above, since the film thickness uniformity of the protective film 200 e is much higher than the film thickness uniformity of the natural oxide films, it becomes possible to sufficiently suppress the contact of the F2 gas with the surface of the base 200 c when supplying the F2 gas at step C as described hereinbelow.
After the protective film 200 e is formed on the surface of the base 200 c, the valve 243 h is closed to stop the supply of the O2 gas into the process chamber 201. Then, the interior of the process chamber 201 is vacuum-exhausted and the gas or the like remaining within the process chamber 201 is removed from the interior of the process chamber 201. At this time, the valves 243 d to 243 f are opened to supply a N2 gas into the process chamber 201 via the nozzles 249 a to 249 c. The N2 gas supplied from the nozzles 249 a to 249 c acts as a purge gas. Thus, the interior of the process chamber 201 is purged (purge).
As the O-containing gas, it may be possible to use, in addition to the O2 gas, an O-containing gas such as a nitrous oxide (N2O) gas, a nitric oxide (NO) gas, a nitrogen dioxide (NO2) gas, an ozone (O3) gas, water vapor (H2O gas), a carbon monoxide (CO) gas, a carbon dioxide (CO2) gas, or the like.
As the inert gas, it may be possible to use, in addition to the N2 gas, a rare gas such as an Ar gas, a He gas, a Ne gas, a Xe gas, or the like. This also applies to each step as described hereinbelow.
[Step B]
After step A is completed, a SiH3R gas is supplied to the wafer 200 in the process chamber 201, namely the wafer 200 after the protective film 200 e is formed on the surface of the base 200 c.
Specifically, the valve 243 g is opened to allow a SiH3R gas to flow into the gas supply pipe 232 g. The flow rate of the SiH3R gas is adjusted by the MFC 241 g. The SiH3R gas is supplied into the process chamber 201 via the gas supply pipe 232 c and the nozzle 249 c and is exhausted from the exhaust port 231 a. At this time, the SiH3R gas is supplied to the wafer 200 (SiH3R gas supply). Simultaneously, the valves 243 d and 243 e are opened to supply an N2 gas into the process chamber 201 via the nozzles 249 a and 249 b, respectively. The supply of the N2 gas may not be performed.
The examples of the processing conditions at this step may be described as follows: SiH3R gas supply flow rate: 1 to 2,000 sccm or 1 to 500 sccm in some embodiments SiH3R gas supply time: 1 second to 60 minutes
N2 gas supply flow rate (per gas supply pipe): 0 to 10,000 sccm
Processing temperature: room temperature (25 degrees C.) to 600 degrees C. or room temperature to 450 degrees C. in some embodiments
Processing pressure: 1 to 2,000 Pa or 1 to 1,000 Pa in some embodiments.
The conditions described herein are conditions under which the SiH3R gas is not gas-phase decomposed (pyrolyzed) in the process chamber 201. Furthermore, the base 200 b and the protective film 200 e includes surfaces terminated with hydroxyl groups (OH) over the entire region (entire surface). The base 200 a includes a surface in which many regions are not OH-terminated, namely a surface in which some regions are OH-terminated.
By supplying the SiH3R gas to the wafer 200 under the aforementioned conditions, as illustrated in FIG. 5D, Si contained in the SiH3R gas can be selectively (preferentially) adsorbed on the surface of the base 200 b while suppressing the adsorption of Si contained in the SiH3R gas on the surface of the base 200 a. At this time, Si contained in the SiH3R gas can be selectively (preferentially) adsorbed on the surface of the protective film 200 e. Furthermore, at this time, Si contained in the SiH3R gas may be adsorbed on a portion of the surface of the base 200 a, but the adsorption amount of Si is smaller than the adsorption amount of Si on the respective surfaces of the base 200 b and the protective film 200 e. The reason why such selective (preferential) adsorption is possible is because the processing conditions at this step are set to the conditions under which the SiH3R gas is not gas-phase decomposed in the process chamber 201. Another reason is because the respective surfaces of the base 200 b and the protective film 200 e are OH-terminated over the entire region, whereas many regions of the surface of the base 200 a are not OH-terminated (some regions of the surface are OH-terminated). At this step, since the SiH3R gas is not gas-phase decomposed in the process chamber 201, Si contained in SiH3R is not multiple-deposited on the respective surfaces of the bases 200 a and 200 b and the protective film 200 e. At this step, on the respective surfaces of the base 200 b and the protective film 200 e, the OH-termination formed on the entire region of the surfaces reacts with SiH3R to chemisorb Si contained in SiH3R on the entire region of the respective surfaces of the base 200 b and the protective film 200 e. On the other hand, since the OH-termination does not exist in many regions of the surface of the base 200 a, Si contained in SiH3R is not chemisorbed in such many regions. However, the OH-termination formed in some regions of the surface of the base 200 a and SiH3R may react with each other to chemisorb Si contained in SiH3R on such some regions. In addition, when Si contained in SiH3R is chemisorbed on the surface of the base, it is chemisorbed in a state where H is bonded to Si.
Furthermore, if the supply of the SiH3R gas is continued for a predetermined period of time, the chemisorption of Si on the respective surfaces of the base 200 b and the protective film 200 e is saturated. That is, the chemisorption of Si on the respective surfaces of the base 200 b and the protective film 200 e is self-limited. In other words, when a Si layer of one layer is formed on the respective surfaces of the base 200 b and the protective film 200 e, Si is no longer chemisorbed on the respective surfaces of the base 200 b and the protective film 200 e. As a result, the amounts of Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e become substantially uniform over the entire region of the respective surfaces of the base 200 b and the protective film 200 e.
After Si is selectively adsorbed on the respective surfaces of the base 200 b and the protective film 200 e, the valve 243 g is closed to stop the supply of the SiH3R gas into the process chamber 201. Then, the gas or the like, which remains within the process chamber 201, is removed from the interior of the process chamber 201 according to the same processing procedures as those of the purge at step A.
As the aminosilane-based gas, it may be possible to use, in addition to the aforementioned monoaminosilane gas containing one amino group in one molecule, a diaminosilane (SiH2RR′) gas containing two amino groups in one molecule, or a triaminosilane (SiHRR′R″) gas containing three amino groups in one molecule.
In addition, as the aminosilane-based gas, it may be possible to use an aminosilane compound represented by the following chemical formula [1]:
SiAx[(NB2)(4−x)]  [1]
In the formula [1], A indicates a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, a propyl group or a butyl group, or an alkoxy group such as a methoxy group, an ethoxy group, a propoxy group or a butoxy group. The alkyl group may be not only a linear alkyl group but also a branched alkyl group such as an isopropyl group, an isobutyl group, a secondary butyl group, a tertiary butyl group or the like. The alkoxy group may be not only a linear alkoxy group but also a branched alkoxy group such as an isopropoxy group, an isobutoxy group or the like. B indicates a hydrogen atom or an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group or the like. The alkyl group may be not only a linear alkyl group but also a branched alkyl group such as an isopropyl group, an isobutyl group, a secondary butyl group, a tertiary butyl group or the like. A plurality of A's may be equal or different, two B's may be equal or different, and x is an integer of 1 to 3.
[Step C]
After step B is completed, a F2 gas is supplied to the wafer 200 in the process chamber 201, namely the wafer 200 after Si is selectively adsorbed on the respective surfaces of the base 200 b and the protective film 200 e.
Specifically, the valve 243 b is opened to allow a F2 gas to flow into the gas supply pipe 232 b. The flow rate of the F2 gas is adjusted by the MFC 241 b. The F2 gas is supplied into the process chamber 201 via the nozzle 249 b and is exhausted from the exhaust port 231 a. At this time, the F2 gas is supplied to the wafer 200 (F2 gas supply). Simultaneously, the valves 243 d and 243 f are opened to supply a N2 gas into the process chamber 201 via the nozzles 249 a and 249 c. The supply of the N2 gas may not be performed.
The examples of the processing conditions at this step may be described as follows: F2 gas supply flow rate: 1 to 2,000 sccm or 1 to 500 sccm in some embodiments F2 gas supply time: 1 second to 60 minutes
Processing temperature: room temperature to 550 degrees C. or room temperature to 450 degrees C. in some embodiments.
Other conditions may be similar to the processing conditions of step B. The conditions described herein are conditions under which the respective surfaces of the base 200 b and the protective film 200 e are not etched, and conditions under which the respective surfaces of the base 200 b and the protective film 200 e are modified (F-terminated), as will be described later.
By supplying the F2 gas to the wafer 200 under the aforementioned conditions, the respective surfaces of the base 200 b and the protective film 200 e can be modified without etching by reacting Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e and the F2 gas with each other. At this time, since the surface of the base 200 c is protected by the protective film 200 e, it is possible to prevent the F2 gas from being brought into contact with the surface of the base 200 c. Thus, it is possible to avoid the etching damage to the surface of the base 200 c. The modified base 200 b and protective film 200 e include F-terminated (SiF-terminated) surfaces. Furthermore, when attention is paid to atoms existing on the respective outermost surfaces of the modified base 200 b and protective film 200 e, it can be said that the base 200 b and the protective film 200 e include F-terminated surfaces, respectively. In addition, when attention is paid to the atoms existing on the respective outermost surfaces of the modified base 200 b and protective film 200 e and atoms bonded to the atoms, it can be said that the base 200 b and the protective film 200 e include SiF-terminated surfaces, respectively. In the present disclosure, for the sake of convenience, it is assumed that the former name will be mainly used. Since the respective surfaces of the base 200 b and the protective film 200 e are F-terminated, film formation reaction is not performed on the respective surfaces of the base 200 b and the protective film 200 e at step D as described hereinbelow. To be precise, it is possible to prolong the time until the film formation reaction occurs, namely the incubation time. Furthermore, in the case in which the organic components contained in SiH3R remain on the respective surfaces of the base 200 b and the protective film 200 e, when Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e reacts with the F2 gas, the organic components are removed from the respective surfaces of the base 200 b and the protective film 200 e.
As illustrated in FIG. 5E, at this step, the respective surfaces of the base 200 b and the protective film 200 e can be selectively (preferentially) modified while suppressing the modification of the surface of the base 200 a. At this time, a portion of the surface of the base 200 a may be modified, but the amount of the modification is smaller than the amount of the modification of the respective surfaces of the base 200 b and the protective film 200 e. Such selective (preferential) modification is possible because Si is not adsorbed on many regions of the surface of the base 200 a after step B is performed, whereas Si is adsorbed on the entire region of the respective surfaces of the base 200 b and the protective film 200 e. Since Si is not adsorbed in many regions of the surface of the base 200 a, the reaction between Si and F2 is not performed, and as a result, the F-termination is not formed in such many regions. However, as described above, Si may be adsorbed on the partial region of the surface of the base 200 a, and in that case, the F-termination may be formed on such partial region. On the other hand, on the entire region of the respective surfaces of the base 200 b and the protective film 200 e, Si adsorbed on the surfaces reacts with F2 to generate an F-containing radical, and a very stable F-termination (SiF-termination) is formed on the entire region of the surfaces thereof by the action of such radical. The F-containing radical may include F, SiF, SiF2, SiF3, SiHF, SiH2F, SiHF2, and the like.
Furthermore, as described above, the amounts of Si adsorbed on the base 200 b and the protective film 200 e at step B are set to be substantially uniform over the entire region of the respective surfaces of the base 200 b and the protective film 200 e. Therefore, at this step, the amounts of the F-containing radical generated on the respective surfaces of the base 200 b and the protective film 200 e become substantially uniform over the entire in-plane region thereof. As a result, the modification of the base 200 b and the protective film 200 e described above is performed substantially uniformly over the entire region of the surfaces thereof.
Furthermore, since Si is not adsorbed in many regions of the surface of the base 200 a as described above, the reaction between Si and F2 is not performed, no F-containing radical is generated, and such many regions are not modified. However, when Si is adsorbed in the partial region of the surface of the base 200 a, Si and F2 react with each other in the partial region thereof to generate the F-containing radical, and the partial region thereof may be modified, as described above. As a result, the surface of the base 200 a is hardly damaged by etching, and adsorption sites are kept in many regions of the surface.
After the respective surfaces of the base 200 b and the protective film 200 e among the bases 200 a and 200 b and the protective film 200 e are selectively modified, the valve 243 b is closed to stop the supply of the F2 gas into the process chamber 201. Then, the gas or the like, which remains within the process chamber 201, is removed from the interior of the process chamber 201 according to the same processing procedures as those of the purge at step A.
As the fluorine-containing gas, it may be possible to use, in addition to the F2 gas, a chlorine trifluoride (ClF3) gas, a chlorine fluoride gas (ClF) gas, an F2+nitric oxide (NO) gas, a ClF+NO gas, a nitrogen trifluoride (NF3) gas, a tungsten hexafluoride (WF6) gas, a nitrosyl fluoride (FNO) gas, or a mixed gas thereof.
[Step D]
After step C is completed, a SiCl4 gas and an NH3 gas are supplied to the wafer 200 in the process chamber 201, namely the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e are modified. At this step, steps D1 and D2 are sequentially performed.
[Step D1]
At this step, a SiCl4 is applied to the wafer 200 in the process chamber 201, namely the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e among the bases 200 a and 200 b and the protective film 200 e are selectively modified.
Specifically, the valve 243 a is opened to allow a SiCl4 gas to flow into the gas supply pipe 232 a. The flow rate of the SiCl4 gas is adjusted by the MFC 241 a. The SiCl4 gas is supplied into the process chamber 201 via the nozzle 249 a and is exhausted from the exhaust port 231 a. At this time, the SiCl4 gas is supplied to the wafer 200 (SiCl4 gas supply). Simultaneously, the valves 243 e and 243 f may be opened to supply an N2 gas into the process chamber 201 via the nozzles 249 b and 249 c, respectively.
The examples of the processing conditions at this step may be described as follows: SiCl4 gas supply flow rate: 1 to 2,000 sccm or 10 to 1,000 sccm in some embodiments SiCl4 gas supply time: 1 to 180 seconds or 10 to 120 seconds in some embodiments Processing temperature: 350 to 600 degrees C. or 400 to 550 degrees C. in some embodiments Processing pressure: 1 to 2,000 Pa or 10 to 1,333 Pa in some embodiments.
Other processing conditions may be similar to the processing conditions of step B.
By supplying the SiCl4 gas to the wafer 200 under the aforementioned conditions, a Si-containing layer containing Cl is formed on the surface of the base 200 a including unmodified regions of the bases 200 a and 200 b and the protective film 200 e. That is, the Si-containing layer containing Cl is formed starting from the unmodified region of the base 200 a, namely the region in which the adsorption sites are kept. The Si-containing layer containing Cl is formed by physisorption or chemisorption of SiCl4 on the surface of the base 200 a, chemisorption of a substance (SiClx) in which a portion of SiCl4 is decomposed, deposition of Si by pyrolysis of SiCl4, or the like. The Si-containing layer containing Cl may be an adsorption layer of SiCl4 or SiClx (a physisorption layer or a chemisorption layer), or may be a deposit layer of Si containing Cl. In the present disclosure, the Si-containing layer containing Cl will be simply referred to as a Si-containing layer.
At this step, the Si-containing layer can be selectively formed on the surface of the base 200 a while suppressing the formation of the Si-containing layer on the respective surfaces of the base 200 b and the protective film 200 e. In addition, when the respective surfaces of the base 200 b and the protective film 200 e are insufficiently modified due to certain factors, the Si-containing layer may be very slightly formed on the respective surfaces of the base 200 b and the protective film 200 e, but also in this case, the thickness of the Si-containing layer formed on the respective surfaces of the base 200 b and the protective film 200 e becomes much smaller than the thickness of the Si-containing layer formed on the surface of the base 200 a. Such selective formation of the Si-containing layer is possible because the F-termination existing on the respective surfaces of the base 200 b and the protective film 200 e acts as a factor that inhibits the formation of the Si-containing layer (adsorption of Si) on the respective surfaces of the base 200 b and the protective film 200 e, i.e., as an inhibitor. Furthermore, the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e are stably kept without being eliminated even when this step is performed.
After the Si-containing layer is formed on the surface of the base 200 a, the valve 243 a is closed to stop the supply of the SiCl4 gas into the process chamber 201. Then, the gas or the like, which remains within the process chamber 201, is removed from the interior of the process chamber 201 according to the same processing procedures as those of the purge at step A (purge).
As the precursor gas (film-forming gas), it may be possible to use, in addition to the SiCl4 gas, a chlorosilane-based gas such as a monochlorosilane (SiH3Cl, abbreviation: MCS) gas, a dichlorosilane (SiH2Cl2, abbreviation: DCS) gas, a trichlorosilane (SiHCl3, abbreviation: TCS) gas, a hexachlorodisilane (Si2Cl6, abbreviation: HCDS) gas, an octachlorotrisilane (Si3Cl8, abbreviation: OCTS) gas or the like, a bromosilane-based gas such as a tetrabromosilane (SiBr4) gas or the like, or an iodosilane-based gas such as a tetraiodosilane (SiI4) gas or the like.
[Step D2]
At this step, an NH3 gas is supplied to the wafer 200 in the process chamber 201, namely to the Si-containing layer formed on the surface of the base 200 a.
Specifically, the valve 243 c is opened to allow an NH3 gas to flow into the gas supply pipe 232 c. The flow rate of the NH3 gas is adjusted by the MFC 241 c. The NH3 gas is supplied into the process chamber 201 via the nozzle 249 c and is exhausted from the exhaust port 231 a. At this time, the NH3 gas is supplied to the wafer 200 (NH3 gas supply). Simultaneously, the valves 243 d and 243 e may be opened to supply an N2 gas into the process chamber 201 via the nozzles 249 a and 249 b, respectively.
The examples of the processing conditions at this step may be described as follows:
    • NH3 gas supply flow rate: 10 to 10,000 sccm
    • NH3 gas supply time: 1 to 60 seconds or 5 to 50 seconds in some embodiments
    • Processing pressure: 1 to 4,000 Pa or 1 to 1,333 Pa in some embodiments.
Other processing conditions may be similar to the processing conditions of step B.
By supplying the NH3 gas to the wafer 200 under the aforementioned conditions, at least a portion of the Si-containing layer formed on the surface of the base 200 a is nitrided. By nitriding the Si-containing layer, a layer containing Si and N, i.e., a silicon nitride layer (SiN layer), is formed on the surface of the base 200 a. When forming the SiN layer, an impurity such as Cl contained in the Si-containing layer constitutes a gaseous substance containing at least Cl in the process of the nitriding reaction of the Si-containing layer with the NH3 gas, and is discharged from the interior of the process chamber 201. Thus, the SiN layer becomes a layer containing a smaller amount of impurity such as Cl or the like than that of the Si-containing layer formed at step D1. Furthermore, the respective surfaces of the base 200 b and the protective film 200 e are kept without being nitrided even when this step is performed. That is, the respective surfaces of the base 200 b and the protective film 200 e are stably kept while being F-terminated without being nitrided (NH-terminated).
After the SiN layer is formed on the surface of the base 200 a, the valve 243 c is closed to stop the supply of the NH3 gas into the process chamber 201. Then, the gas or the like, which remains within the process chamber 201, is removed from the interior of the process chamber 201 according to the same processing procedures as those of the purge at step A (purge).
As the reaction gas (film-forming gas), it may be possible to use, in addition to the NH3 gas, for example, a hydrogen nitride-based gas such as a diazene (N2H2) gas, a hydrazine (N2H4) gas, a N3H8 gas, or the like.
[Performing a Predetermined Number of Times]
A cycle which non-simultaneously, i.e., non-synchronously, performs steps D1 and D2 described above is implemented a predetermined number of times (n times, where n is an integer of 1 or more). Thus, a SiN film can be selectively formed on the surface of the base 200 a among the bases 200 a and 200 b and the protective film 200 e exposed on the surface of the wafer 200, as illustrated in FIG. 5F. The aforementioned cycle may be repeated multiple times. That is, the thickness of the SiN layer formed per one cycle may be set smaller than a desired film thickness, and the aforementioned cycle may be repeated multiple times until the film thickness of a film formed by laminating the SiN layer becomes equal to the desired film thickness.
Furthermore, when performing steps D1 and D2, since the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e are kept without being eliminated, the action as the inhibitor is maintained and no SiN film is formed on the respective surfaces of the base 200 b and the protective film 200 e. However, if the respective surfaces of the base 200 b and the protective film 200 e are not sufficiently modified due to certain factors, the SiN film may be very slightly formed on the respective surfaces of the base 200 b and the protective film 200 e, but also in this case, the thickness of the SiN film formed on the respective surfaces of the base 200 b and the protective film 200 e becomes much smaller than the thickness of the SiN film formed on the surface of the base 200 a. In the present disclosure, the expression “the SiN film is selectively formed on the surface of the base 200 a” among the bases 200 a and 200 b and the protective film 200 e may include not only a case where no SiN film is formed on the respective surfaces of the base 200 b and the protective film 200 e, but also a case where a very thin SiN film is formed on the respective surfaces of the base 200 b and the protective film 200 e, as described above.
(After-Purge and Atmospheric Pressure Return)
After the selective formation of the SiN film on the base 200 a is completed, the N2 gas as a purge gas is supplied from each of the nozzles 249 a to 249 c into the process chamber 201 and is exhausted from the exhaust port 231 a. Thus, the interior of the process chamber 201 is purged and the gas or the reaction byproduct, which remains within the process chamber 201, is removed from the interior of the process chamber 201 (after-purge). Thereafter, the internal atmosphere of the process chamber 201 is substituted by an inert gas (inert gas substitution). The internal pressure of the process chamber 201 is returned to an atmospheric pressure (atmospheric pressure return).
(Boat Unloading and Wafer Discharging)
The seal cap 219 is moved down by the boat elevator 115 to open the lower end of the manifold 209. Then, the processed wafers 200 supported on the boat 217 are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After the boat unloading, the shutter 219 s is moved so that the lower end opening of the manifold 209 is sealed by the shutter 219 s via the O-ring 220 c (shutter closing). The processed wafers 200 are unloaded to the outside of the reaction tube 203 and are subsequently discharged from the boat 217 (wafer discharging).
Furthermore, as illustrated in FIG. 5G, the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e are dissociated by reacting with a predetermined reaction product, specifically, moisture (H2O) in the atmosphere, when the processed wafers 200 are exposed to the atmosphere. That is, the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e can be removed by the exposure of the processed wafers 200 to the atmosphere. By removing the F-terminations from the respective surfaces of the base 200 b and the protective film 200 e, the respective surface states of the base 200 b and the protective film 200 e are reset, and the film-forming process can be performed on the respective surfaces of the base 200 b and the protective film 200 e at a subsequent step.
(3) Effects According to the Present Embodiments
According to the present embodiments, one or more effects as set forth below may be achieved.
(a) By performing steps A to D, it becomes possible to selectively form the SiN film on the surface of the base 200 a among the bases 200 a, 200 b, and 200 c exposed on the surface of the wafer 200. This makes it possible to simplify their processes, such as omitting a patterning process including photolithography, for example, when manufacturing a semiconductor device. As a result, it is possible to improve the productivity of the semiconductor device and to reduce the manufacturing cost.
(b) By forming the SiO film as the protective film 200 e on the surface of the base 200 c at step A, since the F2 gas is not brought into contact the surface of the base 200 c at step C, it is possible to suppress the etching damage to the surface of the base 200 c. That is, it is possible to modify the respective surfaces of the base 200 b and the protective film 200 e while suppressing the etching damage to the base 200 c by the F2 gas at step C.
In this case, it may also be considered that the natural oxide film (SiO film) formed on the surface of the base 200 c before the DHF cleaning is used as the protective film. However, since the natural oxide film has a non-uniform thickness, when the natural oxide film is used as the protective film, the surface of the base 200 c may be etched and damaged by etching by bringing the F2 gas into contact with the base 200 c in a portion where the film thickness of the natural oxide film is small at step C.
(c) Since the film thickness of the protective film 200 e is as small as about 10 Å, it may not be necessary to perform the step of removing the protective film 200 e after the selective growth is completed. In this case, since the manufacturing process of the semiconductor device can be simplified, it is possible to improve the productivity of the semiconductor device and to reduce the manufacturing cost. However, when the SiO film formed as the protective film 200 e influences the device characteristics or the like, it is desirable to remove the protective film 200 e. In that case, it is possible to remove the protective film 200 e by, for example, DHF cleaning or the like.
(d) By performing the DHF cleaning to remove the natural oxide films 200 d formed on the surface of the base 200 a and exposing the surface of the base 200 c before performing step A, it is possible to form the SiN film with high film thickness uniformity on the surface of the base 200 c at step D. Furthermore, by removing the natural oxide films 200 d formed on the surface of the base 200 c to expose the surface of the base 200 c, it is possible to form the protective film 200 e with high film thickness uniformity on the surface of the base 200 c by uniformly oxidizing the surface of the base 200 c at step A.
(e) At step B, the amounts of Si selectively (preferentially) adsorbed on the base 200 b and the protective film 200 e can be set to be substantially uniform over the entire region of the respective surfaces of the base 200 b and the protective film 200 e. This makes it possible to substantially uniformly modify the entire region of the respective surfaces of the base 200 b and the protective film 200 e at step C. As a result, it is possible to substantially uniformly and reliably inhibit the formation of the SiN film on the base 200 b and the protective film 200 e over the entire region of the surfaces thereof at step D. That is, it is possible to enhance the selectivity in the selective growth.
(f) By exposing the processed wafer 200 to the atmosphere after performing step D, it is possible to eliminate the F-terminations as inhibitors existing on the respective surfaces of the base 200 b and the protective film 200 e. As described above, since the F-terminations can be easily removed, it is may not be necessary to separately prepare a step of removing the inhibitors. Thus, it is possible to simplify the manufacturing process of the semiconductor device, to improve the productivity of the semiconductor device, and to reduce the manufacturing cost.
(g) Since at least one selected from the group of steps A to D or each of steps A to D in some embodiments is performed in a non-plasma atmosphere, it is possible to avoid plasma damage to the wafer 200, and also to apply it to the process concerned with plasma damage of the present disclosure.
(h) The effects mentioned above can be similarly achieved in the case where an oxygen-containing gas other than the O2 gas is used, or in the case where an aminosilane-based gas other than the SiHR3 gas is used, or in the case where a fluorine-containing gas other than the F2 gas is used, or in the case where a precursor gas other than the SiCl4 gas is used, or in the case where a reaction gas other than the NH3 gas is used, or in the case where an inert gas other than the N2 gas is used.
Other Embodiments of the Present Disclosure
While one or more embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the aforementioned embodiments but may be variously modified without departing from the spirit of the present disclosure.
In the aforementioned embodiments, there has been described an example in which Si is selectively adsorbed on the respective surfaces of the base 200 b and the protective film 200 e by supplying the aminosilane-based gas to the wafer 200 at step B, and the respective surfaces of the base 200 b and the protective film 200 e are modified without etching by supplying the F-containing gas to the wafer 200 to react Si adsorbed on the respective surfaces of the base 200 b and the protective film 200 e with the F-containing gas at step C, but the present disclosure is not limited to the aforementioned embodiments. For example, at step C, the F-containing radical is generated by supplying the F-containing gas in an atmosphere in which a pseudo catalyst exists and the respective surfaces of the base 200 b and the protective film 200 e may be modified without etching using the F-containing radical thus generated. That is, at step C, the F-containing radical is generated by supplying the F-containing gas into the process chamber 201 accommodating the pseudo catalyst, and the respective surfaces of the base 200 b and the protective film 200 e among the bases 200 a and 200 b and the protective film 200 e may be selectively (preferentially) modified without etching by supplying the radical thus generated to the surface of the wafer 200. In this case, step B cannot be performed.
The term “pseudo catalyst” herein refers to a substance of promoting the decomposition of the F-containing gas and urging the generation of the F-containing radical from the F-containing gas. The generation of the F-containing radical from the F-containing gas can be promoted by the pseudo catalytic action occurring by bringing the F-containing gas into contact with the pseudo catalyst to efficiently generate the F-containing radical.
As the pseudo catalyst, it may be possible to use, for example, Si of a solid whose outermost surface is not covered with a natural oxide film (SiO film), i.e., a Si member is exposed by exposing a Si material on the outermost surface. For example, a wafer made of Si from which the natural oxide film formed on the outermost surface is removed by DHF cleaning or the like, for example, a bare Si wafer (hereinafter, referred to as a bare wafer), may be used as such a member. In addition, the natural oxide film is formed on the outermost surface of the bare wafer stored in the atmosphere and the Si material is not exposed on the outermost surface, and therefore, the bare wafer cannot be used as the pseudo catalyst as it is. In order for the bare wafer to act as the pseudo catalyst, it may be necessary to remove the natural oxide film formed on the outermost surface of the bare wafer when performing step C and to create a state in which the Si material is exposed on the outermost surface.
When the bare wafer is used as the pseudo catalyst, the bare wafer from which the Si material is exposed on the uppermost surface is held at a predetermined position of the boat 217 together with the wafer 200 to be processed, and the bare wafer as the pseudo catalyst can be accommodated in the process chamber 201 by loading the boat 217 into the process chamber 201 in that state. Furthermore, in this case, it is desirable that the bare wafer as the pseudo catalyst and the wafer 200 to be processed be alternately charged on the boat 217 every other sheet, and the bare wafer be arranged directly above the base 200 b and just above the protective film 200 e by allowing the upper surface of the wafer 200 to be processed and the surface of the bare wafer as the pseudo catalyst to face each other. In this case, at step C, the F-containing radical can be efficiently generated by bringing the F-containing gas into contact with the bare wafer as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e. As a result, it becomes possible to appropriately modify the respective surfaces of the base 200 b and the protective film 200 e.
The processing procedures and processing conditions for the selective growth in this case may be similar to the processing procedures and processing conditions of the aforementioned embodiments, except that the bare wafer as the pseudo catalyst is set in the boat 217 and step B is not performed, as in the gas supply sequence illustrated below.
O2→Si+F2→(SiCl4→NH3)×n⇒SiN
Even in this case, the same effects as those of the aforementioned embodiments may be achieved. Furthermore, by supplying the F-containing gas in an atmosphere in which the pseudo catalyst exists at step C, it is possible to increase the amount of the F-containing radical generated by more promoting the generation of the F-containing radical in the process chamber 201 than in the case where the F-containing gas is supplied in an atmosphere in which the pseudo catalyst does not exist. As a result, by promoting the modification of the respective surfaces of the base 200 b and the protective film 200 e at step C, it is possible to appropriately perform the selective formation of the SiN film on the surface of the base 200 a. Moreover, by using the pseudo catalyst, it is possible to lower the processing temperature at step C, and to effectively suppress the etching of the surface of the base 200 a or the etching damage to the surface of the base 200 a at step C.
In addition, instead of the bare wafer, a plate made of Si (Si plate), a chip made of Si (Si chip), a piece made of Si (Si piece), a block made of Si (Si block), or the like may be used as the pseudo catalyst. Even when these are used as the pseudo catalyst, it may be necessary to remove the natural oxide film formed on their outermost surfaces and to create a state in which the Si material is exposed on the outermost surfaces, as in the case of using the bare wafer as the pseudo catalyst.
Furthermore, before performing step C, a Si film is formed (precoated) in advance on the surface of any member (the inner wall of the reaction tube 203, the surface of the boat 217, or the like) in the process chamber 201, and this Si film (precoated film) may also be used as the pseudo catalyst. The Si film as the precoated film may be formed, for example, by using a silane-based gas such as a monosilane (SiH4) gas or the like and by a CVD method. The Si film may be a Si film in an amorphous (non-crystalline) state, a Si film in a poly (polycrystalline) state, or a Si film in a mixed state of amorphous and polycrystal.
The examples of the processing conditions when forming the Si film may be described as follows:
    • SiH4 gas supply flow rate: 10 to 2,000 sccm
    • N2 gas supply flow rate (per gas supply pipe): 0 to 10,000 sccm
    • Gas supply time: 10 to 400 minutes
    • Processing temperature: 450 to 550 degrees C. or 450 to 530 degrees C. in some embodiments
    • Processing pressure: 1 to 900 Pa.
In this case, at step C, the F-containing radical can be efficiently generated by bringing the F-containing gas into contact with the Si film (precoated film) as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to the base 200 b and the protective film 200 e. As a result, it becomes possible to appropriately modify the respective surfaces of the base 200 b and the protective film 200 e.
Furthermore, in addition to the Si film, a SiN film, a silicon carbide film (SiC film), a silicon carbonitride film (SiCN film), a silicon-rich SiN film (SiRN film), a silicon-rich SiC film (SiRC film), a silicon-rich SiCN film (SiRCN film), or the like may be used as the precoated film. That is, in addition to Si, a Si-containing film containing C or N may be used as the precoated film. The SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, and the SiRCN film as the precoated films may be formed, for example, using an aminosilane-based gas such as an ethylmethylaminosilane (SiH3[N(CH3)(C2H5)]) gas, a dimethylaminosilane (SiH3[N(CH3)2]) gas, a diisopropylaminosilane (SiH3[N(C3H7)2]) gas, a disecondary butylaminosilane (SiH3[H(C4H9)2]) gas or the like and by the CVD method. The processing conditions at this time may be similar to the processing conditions when forming the Si film as the precoated film described above. Furthermore, the aminosilane-based gas is a gas containing Si and an amino group, and may be a gas containing at least Si, N, and C as constituent elements.
Also, in these cases, at step C, the F-containing radical can be efficiently generated by bringing the F-containing radicals into contact with the SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, or the SiRCN film (precoated film) as the pseudo catalyst, and the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e. As a result, it becomes possible to appropriately modify the respective surfaces of the base 200 b and the protective film 200 e.
The processing procedures and processing conditions in the selective growth when these precoated films are used as the pseudo catalysts may be similar to the processing procedures and processing conditions of the aforementioned embodiments except that these films are precoated on the surface of any member in the process chamber 201 and step B is not performed. As described above, even when the precoated film is used as the pseudo catalyst, the same effects as those when the bare wafer is used as the pseudo catalyst may be achieved. The precoated film in this case may be referred to as a pseudo catalyst film or a pseudo catalyst precoated film.
In addition, after the wafer 200 to be processed is accommodated in the process chamber 201 and before step C is performed, a Si film is formed on the surface of the wafer 200, i.e., on the respective surfaces of the base 200 a and 200 b and the protective film 200 e, and this Si film may also be used as the pseudo catalyst, i.e., the pseudo catalyst film. As the pseudo catalyst film, in addition to the Si film, a SiN film, a SiC film, a SiCN film, a SiRN film, a SiRC film, a SiRCN film, or the like may be used. That is, in addition to Si, a Si-containing film containing C or N may be used as the pseudo catalyst film. A gas and processing conditions used when forming the Si film, the SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, or the SiRCN film as the pseudo catalyst film may be similar to the gas and the processing conditions used when forming the precoated film described above.
In these cases, at step C, the F-containing radical can be efficiently generated by bringing the F-containing gas into contact with the pseudo catalyst film, and the F-containing radical efficiently generated in this way can be supplied to each of the base 200 b and the protective film 200 e. That is, the respective surfaces of the base 200 b and the protective film 200 e can be modified so as to be F-terminated. In addition, at this time, the pseudo catalyst film formed on the surface of the base 200 a is etched and the adsorption site is exposed on the surface of the base 200 a. At this time, the surface of the base 200 a may be slightly etched, but also in that case, the etching amount is small and the adsorption site on its surface is kept. The base 200 b and the protective film 200 e are formed of a SiO film, and include a strong Si—O bond so that the surfaces thereof are appropriately F-terminated without etching and appropriately modified.
The processing procedures and processing conditions in the selective growth when these pseudo catalyst films are used may be similar to the processing procedures and processing conditions of the aforementioned embodiments except that the pseudo catalyst film is formed on the surface of the wafer 200 and step B is not performed. As described above, even when the Si film, the SiN film, the SiC film, the SiCN film, the SiRN film, the SiRC film, the SiRCN film, or the like is used as the pseudo catalyst, the same effects as those when the bare wafer is used as the pseudo catalyst may be achieved.
Furthermore, as the pseudo catalyst, it may be possible to use, for example, a gaseous pseudo catalyst, as well as the solid pseudo catalyst such as the bare wafer, the Si plate, the Si chip, the Si piece, the Si block, the Si-containing precoated film or the Si-containing pseudo catalyst film. As the gaseous pseudo catalyst, i.e., as the pseudo catalyst gas, it may be possible to use a gas for promoting the decomposition of the F-containing gas to generate the F-containing radical from the F-containing gas by bringing it into contact with the F-containing gas. As the pseudo catalyst gas, specifically, it may be possible to use, for example, at least one selected from the group of an O2 gas, a N2O gas, a NO2 gas, a NO gas, a HF gas, an NH3 gas, and a hydrogen (H2) gas. The supply of these gases may be performed simultaneously with the supply of the F-containing gas into the process chamber 201 using, for example, the nozzles 249 a and 249 c or the like.
In this case, at step C, the F-containing gas is supplied in an atmosphere in which the pseudo catalyst gas exists by simultaneously supplying the F-containing gas and the pseudo catalyst gas into the process chamber 201. At this time, the F-containing gas can be brought into contact with the pseudo catalyst gas, whereby the F-containing radical can be efficiently generated and the F-containing radical efficiently generated in this way can be efficiently supplied to each of the base 200 b and the protective film 200 e. As a result, it becomes possible to appropriately modify the respective surfaces of the base 200 b and the protective film 200 e. Furthermore, the F-containing gas and the pseudo catalyst gas may be supplied into the process chamber 201 alternately or intermittently as long as the F-containing gas and the pseudo catalyst gas are mixed in the process chamber 201.
The processing procedures and processing conditions in the selective growth at this time may be similar to the processing procedures and processing conditions of the aforementioned embodiments except that the F-containing gas and the pseudo catalyst gas are supplied into the process chamber 201 and step B is not performed. As described above, even when the F-containing gas and the pseudo catalyst gas are supplied, the same effects as those when the bare wafer is used as the pseudo catalyst may be achieved. Furthermore, even when the gaseous pseudo catalyst is used, it is possible to lower the processing temperature at step C and to effectively suppress the etching of the surface of the base 200 a or the etching damage to the surface of the base 200 a at step C, as in the case of using the solid pseudo catalyst.
Furthermore, the term “catalyst” refers to a substance in which itself does not change before and after a chemical reaction, but which changes the rate of reaction. The aforementioned substances exemplified as the pseudo catalysts have a catalytic action of promoting the generation of F-containing radical, but some of these substances themselves change before and after a chemical reaction. For example, the NO gas has a catalytic action, but when reacting with the F-containing gas, a portion of the molecular structure may be decomposed so that itself may change before and after a chemical reaction. As described above, even if the substance itself changes before and after the chemical reaction, the substance that changes the rate of the reaction will be referred to herein as a “pseudo catalyst.”
In addition, for example, at step C, the generation of the F-containing radical from the F-containing gas may be promoted by activation (excitation) of the F-containing gas by plasma, heating, light irradiation, or the like. Even in these cases, the same effects as those of the aforementioned embodiments may be achieved. Furthermore, at step C, the generation of the F-containing radical in the process chamber 201 may be promoted by activating the F-containing gas by plasma, heating, light irradiation, or the like, compared with the case where the F-containing gas is not activated by these, making it possible to increase the amount of the F-containing radical to be generated. As a result, it is possible to promote the modification of the respective surfaces of the base 200 b and the protective film 200 e, and to appropriately perform the selective formation of the SiN film on the surface of the base 200 a at step C. Furthermore, it is also possible to lower the processing temperature at step C. Moreover, in the case of using plasma, it is desirable that a method of activating the F-containing gas by plasma in a remote plasma unit installed outside the process chamber 201 and then supplying it into the process chamber 201, i.e., a remote plasma method, be employed in order to suppress plasma damage to the wafer 200 or any member in the process chamber 201.
In addition, in the aforementioned embodiments, there has been described an example in which steps A, B, C, and D are sequentially performed on the wafer 200 in which the base 200 a including the SiN film, the base 200 b including the SiO film, and the base 200 c including the single crystalline Si are exposed on its surface, but the present disclosure is not limited to the aforementioned embodiments. For example, instead of the base 200 a including the SiN film, a base including a SiCN film, a silicon boronitride film (SiBN film), a silicon borocarbonitride film (SiBCN film), or a silicon borocarbide film (SiBC film) may be exposed on the surface of the wafer 200. Furthermore, for example, instead of the base 200 b including the SiO film, a base including a silicon oxycarbide film (SiOC film), a silicon oxynitride film (SiON film), or a silicon oxycarbonitride film (SiOCN film) may be exposed. Moreover, for example, instead of the base 200 c including the single crystalline Si, a base including an epitaxial silicon film (Epi-Si film), a polysilicon film (poly-Si film (polycrystalline Si film)), or an amorphous silicon film (a-Si film (non-crystalline Si film)) may be exposed. Furthermore, for example, in addition to the base 200 a including the SiN film, the base 200 b including the SiO film, and the base 200 c including the single crystalline Si, a base including a conductive metallic thin film such as a tungsten film (W film), a tungsten nitride film (WN film), or a titanium nitride film (TiN film) may be exposed. Also, instead of the base 200 a including the SiN film, a base including the metallic thin film described above may be exposed. Even in these cases, the same effects as those of the aforementioned embodiments may be achieved. That is, it is possible to selectively form a film on the surface of the base 200 a or the surface of the aforementioned metallic thin film while avoiding film formation on the bases 200 b and 200 c.
Furthermore, in the aforementioned embodiments, there has been described an example in which a monoaminosilane gas is used as the aminosilane-based gas at step B, but the present disclosure is not limited to the aforementioned embodiments. For example, at step B, as the aminosilane-based gas, a diaminosilane gas or a triaminosilane gas may be used instead of the monoaminosilane gas. Even in these cases, the same effects as those of the aforementioned embodiments may be achieved. However, at step B, as a gas having a smaller number of amino groups contained in one molecule is used as the aminosilane-based gas, the adsorption density of Si on the respective surfaces of the base 200 b and the protective film 200 e becomes higher, and at step C, the density of SiF-terminations formed on the respective surfaces of the base 200 b and the protective film 200 e becomes higher. As a result, at step D, it is possible to enhance the film formation inhibiting effect on the respective surfaces of the base 200 b and the protective film 200 e. From this viewpoint of point, it is particularly desirable to use monoaminosilane including one amino group contained in one molecule as the aminosilane-based gas.
Furthermore, in the aforementioned embodiments, there has been described an example in which a cycle which non-simultaneously performs steps D1 and D2 is implemented a predetermined number of times at step D, but the present disclosure is not limited to the aforementioned embodiments. For example, at step D, before starting the cycle which non-simultaneously performs steps D1 and D2, a step of supplying an NH3 gas for a predetermined period of time (NH3 preflow) may be performed on the wafer 200 in the process chamber 201, namely the wafer 200 after the respective surfaces of the base 200 b and the protective film 200 e among the bases 200 a and 200 b and the protective film 200 e are selectively modified. Even in this case, since the F-terminations existing on the respective surfaces of the base 200 b and the protective film 200 e are stably kept without being eliminated, the same effects as those of the aforementioned embodiments may be achieved. Furthermore, the adsorption site on the surface of the base 200 a can be optimized, thereby improving the quality of the SiN film formed on the base 200 a.
Moreover, in the aforementioned embodiments, there has been described an example in which the SiCl4 gas is used as the precursor gas and the NH3 gas is used as the reaction gas at step D, but the present disclosure is not limited to the aforementioned embodiments. For example, at step D, as the precursor gas, it may be possible to use, in addition to the SiCl4 gas, a metal halide gas such as the aforementioned chlorosilane-based gas or titanium tetrachloride (TiCl4) gas. Furthermore, for example, as the reaction gas, it may be possible to use, in addition to the N-containing gas such as an NH3 gas, an O-containing gas such as an oxygen (O2) gas, a N- and C-containing gas such as a triethylamine ((C2H5)3N, abbreviation: TEA) gas, a C-containing gas such as a propylene (C3H6) gas, or a boron (B)-containing gas such as a trichloroborane (BCl3) gas. In addition, a film such as a SiON film, a SiCN film, a SiOCN film, a SiOC film, a SiBN film, a SiBCN film, a TiN film, a titanium oxide nitride film (TiON film) or the like may be formed on the surface of the base 200 a which is not modified, among the bases 200 a and 200 b and the protective film 200 e, by the gas supply sequences illustrated below. The F-terminations formed on the surfaces of the bases 200 b and 200 c are very stable, and therefore, in these cases, i.e., when a gas containing an OH group such as water vapor (H2O gas) or the like is not used as the film-forming gas, the same effects as those of the aforementioned embodiments may be achieved.
O2→SiH3R→F2→(SiCl4→NH3→O2)×n⇒SiON
O2→SiH3R→F2→(HCDS→C3H6→NH3)×n⇒SiCN
O2→SiH3R→F2→(HCDS→C3H6→NH3→O2)×n⇒SiOCN
O2→SiH3R→F2→(HCDS→TEA→O2)×n⇒SiOC(N)
O2→SiH3R→F2→(DCS→BCl3→NH3)×n⇒SiBN
O2→SiH3R→F2→(DCS→C3H6→BCl3→NH3)×n⇒SiBCN
O2→SiH3R→F2→(TiCl4→NH3)×n⇒TiN
O2→SiH3R→F2→(TiCl4→NH3→O2)×n⇒TiON
Furthermore, in the aforementioned embodiments, there has been described an example in which the DHF cleaning is performed on the wafer 200 before performing the selective growth, but the present disclosure is not limited to aforementioned embodiments. For example, after forming the base 200 a, when the natural oxide films 200 d are not formed on the surfaces of the bases 200 a and 200 c as in the case of performing the selective growth described above without exposing the bases 200 a and 200 c to the atmosphere, the DHF cleaning may not be performed.
Recipes used in each processing may be prepared individually according to the processing contents and may be stored in the memory 121 c via a telecommunication line or the external memory 123. Moreover, at the start of each processing, the CPU 121 a may properly select an appropriate recipe from the recipes stored in the memory 121 c according to the processing contents. Thus, it is possible for a single substrate processing apparatus to form films of different kinds, composition ratios, qualities and film thicknesses with enhanced reproducibility. In addition, it is possible to reduce an operator's burden and to quickly start each processing while avoiding an operation error.
The recipes mentioned above are not limited to newly-prepared ones but may be prepared by, for example, modifying the existing recipes already installed in the substrate processing apparatus. When modifying the recipes, the modified recipes may be installed in the substrate processing apparatus via a telecommunication line or a recording medium storing the recipes. In addition, the existing recipes already installed in the substrate processing apparatus may be directly modified by operating the input/output device 122 of the existing substrate processing apparatus.
In the aforementioned embodiments, there has been described an example in which films are formed using a batch-type substrate processing apparatus capable of processing a plurality of substrates at a time. The present disclosure is not limited to the aforementioned embodiments but may be appropriately applied to, e.g., a case where films are formed using a single-wafer-type substrate processing apparatus capable of processing a single substrate or several substrates at a time. In addition, in the aforementioned embodiments, there have been described examples in which films are formed using the substrate processing apparatus provided with a hot-wall-type process furnace. The present disclosure is not limited to the aforementioned embodiments but may be appropriately applied to a case where films are formed using a substrate processing apparatus provided with a cold-wall-type process furnace.
In the case of using these substrate processing apparatuses, each processing may be performed by the processing procedures and processing conditions similar to those of the aforementioned embodiments. Effects similar to those of the aforementioned embodiments may be achieved.
The embodiments described above may be appropriately combined with one another. The processing procedures and processing conditions at this time may be similar to, for example, the processing procedures and processing conditions of the aforementioned embodiments.
Examples
A plurality of wafers each including a SiN film (first base), a SiO film (second base), and a single crystalline Si (third base) exposed on its surface were prepared. The surface of each wafer was cleaned using a DHF aqueous solution to remove natural oxide films formed on the surfaces of the SiN film and the single crystalline Si in each wafer. Thereafter, a process of forming a SiN film on each wafer using the substrate processing apparatus illustrated in FIG. 1 was performed to produce two evaluation samples (samples 1 and 2).
When producing sample 1 (example), steps A to D in the aforementioned embodiments were each performed. The processing conditions at steps A to D were set to predetermined conditions which fall within the processing condition range described in the aforementioned embodiments.
When producing sample 2 (comparative example), step A in the aforementioned embodiments was not performed, and steps B to D were each performed. The processing conditions at each of steps B to D were set similar to the processing conditions at each of steps B to D when producing sample 1.
As results of observing both a SEM image and a TEM image of cross sections of samples 1 and 2, it could be confirmed that in sample 1 in which step A was performed, the surface of the third base was not damaged by etching. On the other hand, in sample 2 in which step A was not performed, it was confirmed that the surface of the third base was damaged by etching. Furthermore, it was confirmed that in any of samples 1 and 2, the SiN film could be selectively formed on the surface of the first base.
According to the present disclosure in some embodiments, it is possible to enhance a selectivity in the selective growth described above while suppressing damage to a surface of a base.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.

Claims (20)

What is claimed is:
1. A method of processing a substrate comprising:
(a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base;
(b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and
(c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.
2. The method according to claim 1, wherein the protective film contains oxygen.
3. The method according to claim 1, wherein the protective film contains silicon and oxygen.
4. The method according to claim 2, wherein the protective film is formed by oxidizing the surface of the third base.
5. The method according to claim 2, wherein the protective film is formed by oxidizing the surface of the third base by oxidizing agent.
6. The method according to claim 2, wherein the protective film is formed by oxidizing the surface of the third base under a condition in which the surface of the first base is not oxidized.
7. The method according to claim 2, wherein in (b), a surface of the protective film is modified to be fluorine-terminated.
8. The method according to claim 1, wherein in (b), the surface of the second base is modified to be fluorine-terminated without etching.
9. The method according to claim 1, wherein in (b), the fluorine-containing gas is supplied to the substrate in an atmosphere in which silicon exists.
10. The method according to claim 1, wherein (b) comprises:
(b1) supplying an aminosilane-based gas to the substrate; and
(b2) supplying the fluorine-containing gas to the substrate.
11. The method according to claim 1, wherein (b) comprises:
(b1) adsorbing silicon on the surface of the second base, and
(b2) fluorine-terminating the surface of the second base by reacting the silicon adsorbed on the surface of the second base with the fluorine-containing gas.
12. The method according to claim 11, wherein in (b1), the silicon is adsorbed on a surface of the protective film, and wherein in (b2), the surface of the protective film is fluorine-terminated by reacting the silicon adsorbed on the surface of the protective film with the fluorine-containing gas.
13. The method according to claim 1, further comprising: (d) removing a natural oxide film formed on the surface of the substrate before performing (a).
14. The method according to claim 13, wherein in (d), a material of the first base is exposed.
15. The method according to claim 1, wherein the first base includes a nitride film, the second base includes an oxide film, and the third base includes a semiconductor material.
16. The method according to claim 1, wherein the first base contains silicon and nitrogen, the second base contains silicon and oxygen, and the third base contains silicon.
17. The method according to claim 1, wherein the first base includes a silicon nitride film, the second base includes a silicon oxide film, and the third base includes at least one selected from the group of a single crystalline silicon, an epitaxial silicon film, a polycrystalline silicon film, and an amorphous silicon film.
18. A method of manufacturing a semiconductor device comprising the method of claim 1.
19. A substrate processing apparatus, comprising:
a process chamber in which a substrate is processed;
a fluorine-containing gas supply system configured to supply a fluorine-containing gas to the substrate in the process chamber;
a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process chamber; and
a controller configured to be capable of controlling an operation of the substrate processing apparatus so as to perform a process comprising: (a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base; (b) modifying a surface of the second base to be fluorine-terminated by supplying the fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and (c) forming a film on a surface of the first base by supplying the film-forming gas to the substrate in a state where the surface of the second base is modified.
20. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
(a) providing a substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base;
(b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and
(c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.
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