US11810764B2 - Faceplate with edge flow control - Google Patents

Faceplate with edge flow control Download PDF

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Publication number
US11810764B2
US11810764B2 US16/856,878 US202016856878A US11810764B2 US 11810764 B2 US11810764 B2 US 11810764B2 US 202016856878 A US202016856878 A US 202016856878A US 11810764 B2 US11810764 B2 US 11810764B2
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Prior art keywords
faceplate
apertures
processing chamber
semiconductor processing
recesses
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US16/856,878
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US20210335574A1 (en
Inventor
Fang RUAN
Prashant Kumar KULSHRESHTHA
Rajaram NARAYANAN
Diwakar Kedlaya
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Applied Materials Inc
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Applied Materials Inc
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Priority to US16/856,878 priority Critical patent/US11810764B2/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RUAN, Fang, KEDLAYA, Diwakar, KULSHRESHTHA, PRASHANT KUMAR, NARAYANAN, Rajaram
Priority to JP2022563913A priority patent/JP2023522706A/ja
Priority to KR1020227040726A priority patent/KR20230002944A/ko
Priority to CN202180044400.0A priority patent/CN116057663A/zh
Priority to PCT/US2021/027967 priority patent/WO2021216449A1/en
Priority to TW110114697A priority patent/TWI810553B/zh
Publication of US20210335574A1 publication Critical patent/US20210335574A1/en
Publication of US11810764B2 publication Critical patent/US11810764B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present technology relates to components and apparatuses for semiconductor manufacturing. More specifically, the present technology relates to processing chamber distribution components and other semiconductor processing equipment.
  • Integrated circuits are made possible by processes which produce intricately patterned material layers on substrate surfaces. Producing patterned material on a substrate requires controlled methods for forming and removing material. Chamber components often deliver processing gases to a substrate for depositing films or removing materials. To promote symmetry and uniformity, many chamber components may include regular patterns of features, such as apertures, for providing materials in a way that may increase uniformity. However, this may limit the ability to tune recipes for on-wafer adjustments.
  • Exemplary semiconductor processing chambers may include a gasbox.
  • the chambers may include a substrate support.
  • the chambers may include a blocker plate positioned between the gasbox and the substrate support.
  • the blocker plate may define a plurality of apertures through the plate.
  • the chambers may include a faceplate positioned between the blocker plate and substrate support.
  • the faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface.
  • the second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber.
  • the faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate.
  • the faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth less than a thickness of the faceplate.
  • the faceplate may be substantially planar across the first surface of the faceplate in an annular region extending radially outward of the plurality of apertures.
  • the chambers may include an electrical source configured to strike a plasma within the processing region of the semiconductor processing chamber.
  • Each aperture of the plurality of apertures may include an aperture profile characterized by a first section extending from the first surface of the faceplate partially through the faceplate.
  • the apertures may be further characterized by a second section extending from a position partially through the faceplate to the second surface of the faceplate.
  • the first section may be characterized by a substantially cylindrical profile.
  • the second section may include a conical or countersunk profile.
  • Each recess of the plurality of recesses may be characterized by a similar profile as the second section of the aperture profile of each aperture of the plurality of apertures.
  • Each recess of the plurality of recesses may extend less than halfway through a thickness of the faceplate from the second surface of the faceplate.
  • Some embodiments of the present technology may encompass semiconductor processing chamber faceplates.
  • the faceplates may include a first surface and a second surface opposite the first surface.
  • the faceplate may be characterized by a central axis extending through the first surface and the second surface.
  • the faceplate may define a plurality of apertures through the faceplate.
  • the faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth less than a thickness of the faceplate.
  • the plurality of recesses may be distributed as a set of rings extending outward from a central axis.
  • a first subset of the set of rings may be characterized by a number of apertures within each corresponding ring according to the equation: XR, where X is a base number of apertures, and R is the corresponding ring number.
  • a second subset of the set of rings radially inward of the first subset of the set of rings may be characterized by a number of apertures within the ring according to the equation: (XR) +N, where N is an additional number of apertures.
  • a third subset of the set of rings radially outward of the first subset of the set of rings may be characterized by a number of apertures within the ring according to the equation: (XR) ⁇ N, where N is an additional number of apertures.
  • Each aperture of the plurality of apertures may extend from the first surface of the faceplate to the second surface of the faceplate.
  • a profile of each aperture may include a taper extending from the second surface of the faceplate. The taper may extend to a depth partway through a depth of the faceplate.
  • the profile of each aperture may transition to a choke from the taper.
  • the profile of each aperture may transition from the choke to a substantially cylindrical profile extending to the first surface of the faceplate.
  • Each recess of the plurality of recesses may be characterized by a profile identical to the taper of the profile of each aperture of the plurality of apertures.
  • a profile for each recess of the plurality of recesses may transition to a substantially cylindrical profile extending to a location less than the thickness of the faceplate.
  • Each recess of the plurality of recesses may be blocked from providing fluid access through the faceplate at the first surface of the faceplate.
  • Each recess of the plurality of recesses may extend less than halfway through a thickness of the faceplate from the second surface of the faceplate.
  • Some embodiments of the present technology may encompass methods of semiconductor processing.
  • the methods may include flowing a precursor into a processing chamber.
  • the processing chamber may include a faceplate and a substrate support on which a substrate is disposed.
  • a processing region of the processing chamber may be at least partially defined between the faceplate and the substrate support.
  • the faceplate may define a plurality of apertures through which the precursor flows.
  • the faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures. Each recess of the plurality of recesses may extend from a surface of the faceplate facing the substrate support to a depth less than a thickness of the faceplate.
  • the methods may include generating a plasma of the precursor within the processing region of the processing chamber.
  • the methods may include depositing a material on the substrate.
  • the material deposited may be characterized by a thickness proximate an edge of the substrate less than5% greater than a thickness proximate a center of the substrate.
  • Each recess of the plurality of recesses may be characterized by a conical or countersunk profile.
  • embodiments of the present technology may allow controlled deposition at an edge region of a substrate. Additionally, the components may maintain edge region plasma generation to reduce effects on plasma density and distribution.
  • FIG. 1 shows a top plan view of an exemplary processing system according to some embodiments of the present technology.
  • FIG. 2 shows a schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology.
  • FIG. 3 shows a schematic partial cross-sectional view of an exemplary faceplate according to some embodiments of the present technology.
  • FIG. 4 A shows a schematic bottom plan view of an exemplary faceplate according to some embodiments of the present technology.
  • FIG. 4 B shows a schematic top plan view of an exemplary faceplate according to some embodiments of the present technology.
  • FIG. 5 shows a chart illustrating an aperture distribution for faceplates according to some embodiments of the present technology.
  • FIG. 6 shows operations of an exemplary method of semiconductor processing according to some embodiments of the present technology.
  • Plasma enhanced deposition processes may energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films may be produced to develop semiconductor structures, including conductive and dielectric films, as well as films to facilitate transfer and removal of materials. For example, hardmask films may be formed to facilitate patterning of a substrate, while protecting the underlying materials to be otherwise maintained.
  • a number of precursors may be mixed in a gas panel and delivered to a processing region of a chamber where a substrate may be disposed. The precursors may be distributed through one or more components within the chamber, which may produce a radial or lateral distribution of delivery to provide increased formation or removal at the substrate surface.
  • One or more devices may be included within a processing chamber for delivering and distributing precursors within a processing chamber.
  • a blocker plate may be included in a chamber to provide a choke in precursor flow, which may increase residence time at the blocker plate and lateral or radial distribution of precursors.
  • a faceplate may further improve uniformity of delivery into a processing region, which may improve deposition or etching.
  • precursor flow rate may impact operation based on the film being formed.
  • some processes may actually lower deposition rates by increasing some precursor flows, other processes may have a proportional increase in deposition rate with increased precursor flow rates across a wide range. Consequently, to increase throughput, some deposition processes may be characterized by precursor delivery rates of greater than or about 5 L/min, greater than or about 7 L/min, greater than or about 10 L/min, or greater.
  • some blocker plate designs may be characterized by increased conductance, such as by increasing the number or size of apertures, which may facilitate cleaning operations and allow increased precursor delivery rates.
  • precursor delivery may be increased, such as with an increased central delivery, depending on the chamber inlet.
  • This flow profile may continue through the faceplate and into the processing region, which may result in increased deposition in a center area of the substrate, which may develop a center peak deposition profile.
  • an edge region of the deposition may be thicker, and adjusting blocker plate conductance to improve central flow may facilitate improvements in this deposition pattern by increasing central deposition.
  • the present technology overcomes these challenges during these higher delivery rate processes, as well as for any other process that may produce an edge peak formation.
  • increased control of the film formation may be afforded.
  • the present technology may produce improved film deposition characterized by improved uniformity across a surface of the substrate.
  • FIG. 1 shows a top plan view of one embodiment of a processing system 100 of deposition, etching, baking, and curing chambers according to embodiments of the present technology.
  • a pair of front opening unified pods 102 supply substrates of a variety of sizes that are received by robotic arms 104 and placed into a low pressure holding area 106 before being placed into one of the substrate processing chambers 108 a - f , positioned in tandem sections 109 a - c .
  • a second robotic arm 110 may be used to transport the substrate wafers from the holding area 106 to the substrate processing chambers 108 a - f and back.
  • Each substrate processing chamber 108 a - f can be outfitted to perform a number of substrate processing operations including formation of stacks of semiconductor materials described herein in addition to plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etch, pre-clean, degas, orientation, and other substrate processes including, annealing, ashing, etc.
  • the substrate processing chambers 108 a - f may include one or more system components for depositing, annealing, curing and/or etching a dielectric or other film on the substrate.
  • two pairs of the processing chambers e.g., 108 c - d and 108 e - f
  • the third pair of processing chambers e.g., 108 a - b
  • all three pairs of chambers e.g., 108 a - f , may be configured to deposit stacks of alternating dielectric films on the substrate.
  • any one or more of the processes described may be carried out in chambers separated from the fabrication system shown in different embodiments. It will be appreciated that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100 .
  • FIG. 2 shows a schematic cross-sectional view of an exemplary plasma system 200 according to some embodiments of the present technology.
  • Plasma system 200 may illustrate a pair of processing chambers 108 that may be fitted in one or more of tandem sections 109 described above, and which may include faceplates or other components or assemblies according to embodiments of the present technology as further described below.
  • the plasma system 200 generally may include a chamber body 202 having sidewalls 212 , a bottom wall 216 , and an interior sidewall 201 defining a pair of processing regions 220 A and 220 B.
  • Each of the processing regions 220 A- 220 B may be similarly configured, and may include identical components.
  • processing region 220 B may include a pedestal 228 disposed in the processing region through a passage 222 formed in the bottom wall 216 in the plasma system 200 .
  • the pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion.
  • the pedestal 228 may include heating elements 232 , for example resistive heating elements, which may heat and control the substrate temperature at a desired process temperature.
  • Pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.
  • the body of pedestal 228 may be coupled by a flange 233 to a stem 226 .
  • the stem 226 may electrically couple the pedestal 228 with a power outlet or power box 203 .
  • the power box 203 may include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220 B.
  • the stem 226 may also include electrical power interfaces to provide electrical power to the pedestal 228 .
  • the power box 203 may also include interfaces for electrical power and temperature indicators, such as a thermocouple interface.
  • the stem 226 may include a base assembly 238 adapted to detachably couple with the power box 203 .
  • a circumferential ring 235 is shown above the power box 203 .
  • the circumferential ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the upper surface of the power box 203 .
  • a rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220 B and may be utilized to position substrate lift pins 261 disposed through the body of pedestal 228 .
  • the substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized for transferring the substrate 229 into and out of the processing region 220 B through a substrate transfer port 260 .
  • a chamber lid 204 may be coupled with a top portion of the chamber body 202 .
  • the lid 204 may accommodate one or more precursor distribution systems 208 coupled thereto.
  • the precursor distribution system 208 may include a precursor inlet passage 240 which may deliver reactant and cleaning precursors through a gas delivery assembly 218 into the processing region 220 B.
  • the gas delivery assembly 218 may include a gasbox 248 having a blocker plate 244 disposed intermediate to a faceplate 246 .
  • a radio frequency (“RF”) source 265 may be coupled with the gas delivery assembly 218 , which may power the gas delivery assembly 218 to facilitate generating a plasma region between the faceplate 246 of the gas delivery assembly 218 and the pedestal 228 , which may be the processing region of the chamber.
  • RF radio frequency
  • the RF source may be coupled with other portions of the chamber body 202 , such as the pedestal 228 , to facilitate plasma generation.
  • a dielectric isolator 258 may be disposed between the lid 204 and the gas delivery assembly 218 to prevent conducting RF power to the lid 204 .
  • a shadow ring 206 may be disposed on the periphery of the pedestal 228 that engages the pedestal 228 .
  • An optional cooling channel 247 may be formed in the gasbox 248 of the gas distribution system 208 to cool the gasbox 248 during operation.
  • a heat transfer fluid such as water, ethylene glycol, a gas, or the like, may be circulated through the cooling channel 247 such that the gasbox 248 may be maintained at a predefined temperature.
  • a liner assembly 227 may be disposed within the processing region 220 B in close proximity to the sidewalls 201 , 212 of the chamber body 202 to prevent exposure of the sidewalls 201 , 212 to the processing environment within the processing region 220 B.
  • the liner assembly 227 may include a circumferential pumping cavity 225 , which may be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220 B and control the pressure within the processing region 220 B.
  • a plurality of exhaust ports 231 may be formed on the liner assembly 227 .
  • the exhaust ports 231 may be configured to allow the flow of gases from the processing region 220 B to the circumferential pumping cavity 225 in a manner that promotes processing within the system 200 .
  • FIG. 3 shows a schematic partial cross-sectional view of an exemplary faceplate 300 according to some embodiments of the present technology.
  • FIG. 3 may illustrate further details relating to components in system 200 , such as for faceplate 246 .
  • Faceplate 300 is understood to include any feature or aspect of system 200 discussed previously in some embodiments.
  • the faceplate 300 may be used to perform semiconductor processing operations including deposition of hardmask materials as previously described, as well as other deposition, removal, and cleaning operations.
  • Faceplate 300 may show a partial view of a faceplate that may be incorporated in a semiconductor processing system, and may illustrate a view across a center of the faceplate, which may otherwise be of any size, and include any number of apertures.
  • exemplary faceplates may be characterized by a number of apertures along a central diameter of greater than or about 20 apertures and/or recesses as will be described further below, and may be characterized by greater than or about 25 apertures, greater than or about 30 apertures, greater than or about 35 apertures, greater than or about 40 apertures, greater than or about 45 apertures, greater than or about 50 apertures, or more.
  • faceplate 300 may be included in any number of processing chambers, including system 200 described above. Faceplate 300 may be included as part of the gas inlet assembly, such as with a gasbox and blocker plate.
  • a gasbox may define or provide access into a processing chamber.
  • a substrate support may be included within the chamber, and may be configured to support a substrate for processing.
  • a blocker plate may be included in the chamber between the gasbox and the substrate support. The blocker plate may include or define a number of apertures through the plate. In some embodiments the blocker plate may be characterized by increased central conductance.
  • a subset of apertures proximate or extending about a central region of the blocker plate may be characterized by a greater aperture diameter than apertures radially outward of the central region. This may increase a central flow conductance in some embodiments.
  • the components may include any of the features described previously for similar components, as well as a variety of other modifications similarly encompassed by the present technology.
  • Faceplate 300 may be positioned within the chamber between the blocker plate and the substrate support as illustrated previously. Faceplate 300 may be characterized by a first surface 305 and a second surface 310 , which may be opposite the first surface. In some embodiments, first surface 305 may be facing towards a blocker plate, gasbox, or gas inlet into the processing chamber. Second surface 310 may be positioned to face a substrate support or substrate within a processing region of a processing chamber. For example, in some embodiments, the second surface 310 of the faceplate and the substrate support may at least partially define a processing region within the chamber. Faceplate 300 may be characterized by a central axis 315 , which may extend vertically through a midpoint of the faceplate, and may be coaxial with a central axis through the processing chamber.
  • Faceplate 300 may define a plurality of apertures 320 defined through the faceplate and extending from the first surface through the second surface. Each aperture 320 may provide a fluid path through the faceplate, and the apertures may provide fluid access to the processing region of the chamber. Depending on the size of the faceplate, and the size of the apertures, faceplate 300 may define any number of apertures through the plate, such as greater than or about 1,000 apertures, greater than or about 2,000 apertures, greater than or about 3,000 apertures, greater than or about 4,000 apertures, greater than or about 5,000 apertures, greater than or about 6,000 apertures, or more. As noted above, the apertures may be included in a set of rings extending outward from the central axis, and may include any number of rings as described previously.
  • the rings may be characterized by any number of shapes including circular or elliptical, as well as any other geometric pattern, such as rectangular, hexagonal, or any other geometric pattern that may include apertures distributed in a radially outward number of rings.
  • the apertures may have a uniform or staggered spacing, and may be spaced apart at less than or about 10 mm from center to center.
  • the apertures may also be spaced apart at less than or about 9 mm, less than or about 8 mm, less than or about 7 mm, less than or about 6 mm, less than or about 5 mm, less than or about 4 mm, less than or about 3 mm, or less.
  • the rings may be characterized by any geometric shape as noted above, and in some embodiments, apertures may be characterized by a scaling function of apertures per ring.
  • a first aperture may extend through a center of the faceplate, such as along the central axis as illustrated.
  • a first ring of apertures may extend about the central aperture, and may include any number of apertures, such as between about 4 and about 10 apertures, which may be spaced equally about a geometric shape extending through a center of each aperture.
  • Any number of additional rings of apertures may extend radially outward from the first ring, and may include a number of apertures that may be a function of the number of apertures in the first ring.
  • the number of apertures in each successive ring may be characterized by a number of apertures within each corresponding ring according to the equation XR, where X is a base number of apertures, and R is the corresponding ring number.
  • the base number of apertures may be the number of apertures within the first ring, and in some embodiments may be some other number, as will be described further below where the first ring has an augmented number of apertures.
  • the second ring may be characterized by 10 apertures, (5)x(2)
  • the third ring may be characterized by 15 apertures, (5)x(3)
  • the twentieth ring may be characterized by 100 apertures, (5)x(20).
  • each aperture of the plurality of apertures across the faceplate may be characterized by an aperture profile, which may be the same or different in embodiments of the present technology.
  • the apertures may include any profile or number of sections having different profiles, such as illustrated.
  • the faceplates may have at least two sections, at least 3 sections, at least 4 sections, at least 5 sections, or more, defining different profiles through the aperture.
  • each aperture of the plurality of apertures may include an aperture profile including at least three sections.
  • first section 322 may extend from the first surface 305 of the faceplate, and may extend partially through the faceplate. In some embodiments the first section 322 may extend at least about or greater than halfway through a thickness of the faceplate between first surface 305 and second surface 310 .
  • First section 322 may be characterized by a substantially cylindrical profile as illustrated. By substantially is meant that the profile may be characterized by a cylindrical profile, but may account for machining tolerances and parts variations, as well as a certain margin of error.
  • the first section 322 may transition to an optional second section 324 , which may operate as a choke in the faceplate, and may increase distribution or uniformity of flow. As illustrated, the section may include a taper from first section 322 to a narrower diameter. The section may then flare to a third section 326 . Third section 326 may extend from a position partially through the faceplate to the second surface 310 . Third section 326 may extend less than halfway through the thickness of the faceplate, for example, or may extend up to or about halfway through the faceplate. Third section 326 may be characterized by a tapered profile from the second surface in some embodiments, and may extend to include a cylindrical portion intersecting a flare from second section 324 , when included. Third section 326 may be characterized by a conical profile in some embodiments, or may be characterized by a countersunk profile, among other tapered profiles.
  • each recess of the plurality of recesses 335 may be a blocked or blind hole in some embodiments, which may not provide fluid access through the faceplate.
  • Recesses 335 may extend from the second surface of the faceplate to a depth less than a thickness of the faceplate.
  • each recess of the plurality of recesses may be characterized by a profile similar or identical to the third portion of each aperture of the plurality of apertures.
  • Each recess may extend less than halfway through a thickness of the faceplate from the second surface of the faceplate.
  • Each recess may be characterized by a taper from the second surface to a cylindrical portion extending to a blocked portion or ending partially through the faceplate.
  • the first surface 305 of the faceplate may be substantially planar across the first surface in an annular region extending radially outward of the plurality of apertures, such as across an area where the recesses would otherwise extend through to the first surface. For example, no cylindrical portion may be included for any aperture about the radially outermost annular section from the first surface of the faceplate.
  • FIG. 4 A shows a schematic bottom plan view of an exemplary faceplate according to some embodiments of the present technology, and may illustrate a schematic view of faceplate 300 , for example, such as along second surface 310 .
  • faceplate 300 may include a plurality of apertures 320 , which may be distributed in a set of rings extending radially outward along the faceplate. For example, from a central aperture 330 , a first ring of apertures including 8 apertures extends about the central aperture. The next ring out, such as a second ring, may include 16 apertures extending about the first ring. This may follow the pattern as previously described for any number of rings as previously noted.
  • apertures 320 may show third section 326 , for example.
  • the apertures may all illustrate a channel extending through the faceplate except at an outer section of the faceplate, where recesses 335 may be located.
  • the recesses may appear as a blind hole or blocked because recesses 335 may not allow fluid passage through the faceplate.
  • recesses 335 may include a similar pattern as the rings of apertures extending outward.
  • recesses 335 may be located as rings of apertures located beyond an outer radius of a substrate that may be positioned within a processing chamber.
  • substrates may be characterized by any dimensions, such as rectangular or elliptical.
  • the radius of the substrate may be 150 mm.
  • apertures that would be included beyond 150 mm from the central axis may be switched to recesses in some embodiments of the present technology.
  • the outer most ring or rings may be recesses instead of apertures.
  • the apertures may be removed completely, and a flat surface may be provided extending from a location of an outer edge of a substrate. As deposition process precursors continue to become more expensive, reducing the volume of wasted precursors may become more important to reduce manufacturing costs.
  • Maintaining a proper plasma profile and deposition uniformity may be facilitated by extending the deposition and flow pattern beyond the radial or lateral dimensions of a substrate being processed, although this material may be pumped from the system as waste.
  • the present technology may modify the faceplate to accommodate or reduce this wasted material. By channeling precursors towards a volume at least partially constrained by the dimensions of the substrate, less waste may be produced.
  • FIG. 4 B shows a schematic top plan view of an exemplary faceplate according to some embodiments of the present technology, and may illustrate a schematic view of faceplate 300 , for example, such as along first surface 305 .
  • faceplate 300 may include a plurality of apertures 320 , and again may include thousands of apertures for faceplates encompassed by the present technology.
  • apertures 320 may show first section 322 , for example.
  • the apertures may all illustrate a channel extending through the faceplate except at an edge region of the faceplate, where recesses 335 may be located on the opposite side of the plate.
  • an exterior region or annular region of the faceplate on first surface 305 may be blank, and may be substantially planar or planar across the area. By including a blank space about this region, flow through the outer edge region of the faceplate may be better dispersed radially to apertures located further inward.
  • faceplate 300 may be included in a processing chamber configured to perform methods of deposition, etch, or other processes where an edge profile may not be uniform.
  • the substrate may be characterized by an edge peak deposition, where additional material may deposit at an outer or edge location on the substrate.
  • edge peak deposition As discussed above, a number of conditions and configurations may contribute to this effect.
  • a plasma profile may produce additional material at a radially outward location. Consequently, although the apertures of the faceplate may at least partially mitigate this effect, the increased flow may carry through the faceplate providing more material at the edge region for deposition when a plasma is generated.
  • deposition at an edge region may be reduced while deposition at a central region may be increased, even with adjacent holes within less than or about 10 mm, less than or about 8 mm, less than or about 6 mm, less than or about 4 mm, or less.
  • the blank surface may affect the plasma being formed.
  • the third section of each aperture may provide a hollow cathode effect, which may increase current density within the area, improving ionization and plasma density within the adjacent portion of the processing region.
  • the region includes reduced surface area, as well as a reduced surface profile. This may lower ionization relative to other areas. Consequently, plasma generation in the area may be affected, which may further reduce material deposition at the substrate surface.
  • the precursor flow extending through the faceplate may be choked inward, which may affect conductance through the faceplate.
  • an edge thickness may increase based on a flow profile from a chamber inlet through a blocker plate and faceplate.
  • a blocker plate may be adjusted to increase center flow conductance as previously described, but further adjustments may be performed in some embodiments of the present technology.
  • apertures may be formed through the faceplate deviating from an aperture ring pattern as previously described.
  • FIG. 5 shows a chart 500 illustrating an aperture distribution for faceplates according to some embodiments of the present technology.
  • the vertical axis illustrated may be a deviation from a general formula defining the aperture pattern for each ring of apertures, such as XR as described previously where X is a base number of apertures, and R is the corresponding ring number.
  • the horizontal axis may be a radial dimension extending from a central axis through the faceplate, where a location further along the axis may correspond to a farther distance outward along the radius.
  • the aperture pattern may deviate from a common equation.
  • the number of apertures per ring may scale proportionately in some embodiments based on a base number of apertures, such as between 4 and 10 apertures in some embodiments.
  • Each successive ring of apertures may have distributed about the ring the base number of apertures for the faceplate times the ring number extending outward from the central axis or central aperture.
  • FIG. 5 may show a deviation profile for some faceplates according to embodiments of the present technology.
  • the apertures may be maintained from the general design. In one specific example encompassed by the present technology, this may only account for the single, central aperture, where a single, central aperture may be maintained, although in some embodiments this may extend out for any number of rings of apertures.
  • the number of apertures per ring may then increase beyond the standard equation to increase a number of apertures per ring proximate a central region of the faceplate, such as within a first region or first annular region, which may include a first subset of rings, extending radially outward along the faceplate.
  • each ring may include one or more additional apertures from what would be the standard number of apertures.
  • these rings may be characterized by a number of apertures according to an equation (XR) +N, where N may be an additional number of apertures, such as from about 1 additional aperture to about X additional apertures or more, such as up to the base number of apertures. This may continue for one or more rings of apertures.
  • this may slope back towards a number of apertures corresponding to the equation XR for a second region, such as a second annular region, which may include a second subset of rings of apertures, extending radially outward along the faceplate.
  • a second region such as a second annular region, which may include a second subset of rings of apertures, extending radially outward along the faceplate.
  • this may not correspond to a different number N, because the figure shows the deviation as a percentage of apertures.
  • the same N additional apertures may be a smaller percentage deviation. Consequently, in some embodiments, N may be the same or a different number of apertures between any adjacent ring of apertures.
  • the number of apertures per ring may then reduce for a third region, such as a third annular region, which may include a third subset of rings of apertures, according to an equation (XR) ⁇ N, up to (XR) ⁇ 2N or more in some embodiments, again where N may be a number of apertures, such as from about 1 less aperture to about X less apertures or more.
  • a third region such as a third annular region, which may include a third subset of rings of apertures, according to an equation (XR) ⁇ N, up to (XR) ⁇ 2N or more in some embodiments, again where N may be a number of apertures, such as from about 1 less aperture to about X less apertures or more.
  • a middle region of the faceplate may maintain the number of apertures according to the equation XR, a radially interior region from this middle region may increase the number of apertures according to the equation (XR) +N, and a radially exterior or outer region from this middle region may reduce the number of apertures according to the equation (XR) ⁇ N or (XR) ⁇ 2N, each of which equation may account for different rings of apertures in the radially outer region.
  • a transition in the aperture profile may occur, which may correspond to a location commensurate with a radial edge of a substrate being processed in some embodiments.
  • the apertures may revert to the standard equation XR, although the apertures may switch to recesses as previously described.
  • a last set of rings of apertures may be recesses corresponding to any of the equations noted above. Although no flow may occur through these apertures, the recesses may still affect the plasma distribution produced. Accordingly, the distribution of recesses may be produced to maintain a distribution of recesses in a pattern extending outward from the central region of the substrate.
  • Non-uniformity of deposition may be the difference between the highest and lowest locations of deposition.
  • faceplates according to embodiments of the present technology may reduce non-uniformity to less than or about 5%, and may reduce non-uniformity to less than or about 3%, less than or about 2%, less than or about 1%, or less.
  • FIG. 6 shows operations of an exemplary method 600 of semiconductor processing according to some embodiments of the present technology.
  • the method may be performed in a variety of processing chambers, including processing system 200 described above, which may include faceplates according to embodiments of the present technology, such as faceplate 300 .
  • Method 600 may include a number of optional operations, which may or may not be specifically associated with some embodiments of methods according to the present technology.
  • Method 600 may include a processing method that may include operations for forming a hardmask film or other deposition operations. The method may include optional operations prior to initiation of method 600 , or the method may include additional operations. For example, method 600 may include operations performed in different orders than illustrated. In some embodiments, method 600 may include flowing one or more precursors into a processing chamber at operation 605 . For example, the precursor may be flowed into a chamber, such as included in system 200 , and may flow the precursor through one or more of a gasbox, a blocker plate, or a faceplate, prior to delivering the precursor into a processing region of the chamber.
  • the faceplate may have a blocked access at an exterior region of the faceplate surrounding a set of apertures along a first surface, and a set of blind recesses in a second surface opposite the first, and which may be facing the processing region. Any of the other characteristics of faceplates described previously may also be included, including any aspect of faceplate 300 , such as that the plurality of recess may be characterized by a conical or countersunk profile.
  • a plasma may be generated of the precursors within the processing region, such as by providing RF power to the faceplate to generate a plasma. Material formed in the plasma may be deposited on the substrate at operation 615 . In some embodiments, depending on the thickness of the material deposited, the deposited material may be characterized by a thickness at the edge of the substrate that is less than or about 10% greater than a thickness proximate a mid or center region along a radius of the substrate.
  • the thickness at the edge of the substrate may be less than or about 9% greater than a thickness proximate a mid or center region along a radius of the substrate, and may be less than or about 8% greater, less than or about 7% greater, less than or about 6% greater, less than or about 5% greater, less than or about 4% greater, less than or about 3% greater, less than or about 2% greater, less than or about 1% greater, or may be substantially similar or uniform across positions along the substrate.

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US16/856,878 2020-04-23 2020-04-23 Faceplate with edge flow control Active 2041-05-22 US11810764B2 (en)

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US16/856,878 US11810764B2 (en) 2020-04-23 2020-04-23 Faceplate with edge flow control
PCT/US2021/027967 WO2021216449A1 (en) 2020-04-23 2021-04-19 Faceplate with edge flow control
KR1020227040726A KR20230002944A (ko) 2020-04-23 2021-04-19 에지 유동 제어를 갖는 면판
CN202180044400.0A CN116057663A (zh) 2020-04-23 2021-04-19 具有边缘流动控制的面板
JP2022563913A JP2023522706A (ja) 2020-04-23 2021-04-19 エッジ流制御付き面板
TW110114697A TWI810553B (zh) 2020-04-23 2021-04-23 具有邊緣流體控制的面板

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US20210335574A1 (en) 2021-10-28
KR20230002944A (ko) 2023-01-05
TW202213615A (zh) 2022-04-01

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