US11469256B2 - Array substrate, display panel and display device - Google Patents
Array substrate, display panel and display device Download PDFInfo
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- US11469256B2 US11469256B2 US16/831,144 US202016831144A US11469256B2 US 11469256 B2 US11469256 B2 US 11469256B2 US 202016831144 A US202016831144 A US 202016831144A US 11469256 B2 US11469256 B2 US 11469256B2
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- base substrate
- via hole
- insulating layer
- conductive line
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- H01L27/124—
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H10W42/60—
Definitions
- the present disclosure relates to the field of display technologies and, in particular, to an array substrate, a display panel mounted with the array substrate, and a display device mounted with the display panel.
- An array substrate is an important component of a display device.
- An array substrate generally includes a base substrate and a multi-layer conductive structure formed on the base substrate.
- HADS high aperture advanced super dimensional switching
- ESD electro-static discharge
- an array substrate including:
- a base substrate a GND trace, disposed along edges of the substrate, the GND trace comprising a plurality of conductive line segments separated from each other; and a connection structure disposed on a side of the GND trace away from the base substrate, and the connection structure electrically connecting the conductive line segments.
- the array substrate further includes:
- connection structure is disposed on a side of the first electrode layer away from the base substrate, and the connection structure electrically connects two adjacent conductive line segments.
- connection structure includes:
- a first via hole (or a plurality of first via holes) disposed on the first insulating layer, wherein an orthographic projection of the first via hole on the base substrate covers an orthographic projection of an interval between two adjacent conductive line segments on the base substrate;
- a second insulating layer disposed on a side of the first electrode layer away from the base substrate, wherein a second via hole (or a plurality of second via holes) are disposed on the second insulating layer, and an orthographic projection of the second via hole on the base substrate covers an orthographic projection of the interval between two adjacent conductive line segments on the base substrate;
- first connection portion disposed on a side of the second insulating layer away from the base substrate, wherein the first connection portion electrically connects two adjacent conductive line segments through the second via hole and the first via hole.
- the array substrate further includes:
- CT cell test
- connection structure further comprises:
- a fourth via hole (or a plurality of fourth via holes) disposed on the first insulating layer and a fifth via hole (or a plurality of fifth via holes) disposed the first electrode layer, the fifth via hole being in communication with the fourth via hole, and a third via hole (or a plurality of third via holes) being disposed on the second insulating layer;
- connection portion disposed on a side of the second insulating layer away from the base substrate, and the third connection portion being electrically connected to the second connection portion through the third via hole.
- the third connection portion and the first connection portion are disposed on a same layer as a common electrode of a display area.
- the first electrode layer is disposed on a same layer as the pixel electrode of the display area.
- four intervals are disposed on the GND traces.
- the four intervals are disposed at four corners of the GND trace in a one-to-one correspondence.
- an opening portion is disposed on the GND trace.
- the opening portion is disposed on a DP side of the array substrate.
- the interval between two adjacent conductive line segments has a length larger than 5 mm, and smaller than or equal to 10 mm.
- a display panel including:
- a display device including:
- FIG. 1 is a schematic structural diagram illustrating an array substrate in the related art
- FIG. 2 is a schematic structural diagram illustrating an array substrate according to an embodiment of the present disclosure
- FIG. 3 is a schematic cross sectional view taken along A-A in FIG. 2 ;
- FIG. 4 is a schematic cross sectional view taken along B-B in FIG. 2 .
- the array substrate can include a display area and a non-display area located around the display area 1 , and a ground (GND)) trace 2 and a gate-driver-on-array (GOA) drive circuit 3 are provided in the non-display area.
- the display area 1 is disposed in the middle of the array substrate.
- a loop of GND trace 2 is disposed around the periphery of the array substrate. The purpose of providing GND trace 2 is to quickly discharge static electricity through the GND trace 2 when an electrostatic voltage is generated, so as to prevent the accumulation of static electricity which causes damage to the inside of the panel and affects the display.
- the GND trace 2 has a limited function of releasing static electricity. When the electrostatic voltage is too high, it will cause the GND metal trace to be injured, even affecting the internal circuits, and causing poor display. Especially for an array substrate, where a gate layer is directly in contact with a base substrate 4 , static electricity is mainly concentrated on the gate layer. Also, since the GND trace 2 is an independent trace formed by the same patterning process as the gate layer and the independent GND trace 2 is rather long, more static electricity may accumulate on the GND trace 2 , causing the first electrode layer 7 and the GND trace 2 to form a potential difference, which is prone to ESD, affecting the product yield of the array substrate.
- the present disclosure provides an array substrate.
- FIG. 2 a schematic structural diagram illustrating an array substrate of an embodiment of the present disclosure is shown.
- the array substrate includes a base substrate 4 , a GND trace 2 , a first insulating layer 51 , a first electrode layer 7 , and a connection structure.
- the GND trace 2 is provided along an edge of the base substrate 4 , and the GND trace 2 includes a plurality of conductive line segments 21 disposed separated from each other.
- the first insulating layer 51 is disposed on a side of the GND trace 2 away from the base substrate 4 .
- the first electrode layer 7 is disposed on a side of the first insulating layer 51 away from the base substrate 4 .
- the connection structure is disposed on the side away from the first electrode layer 7 .
- the connection structure can electrically connect two adjacent conductive line segments 21 .
- the base substrate 4 can be a glass substrate.
- a first conductive layer is formed on the base substrate 4 , the first conductive layer can be used to form a gate electrode in the display area 1 and to form a GND trace 2 in the non-display area through the same patterning process.
- the GND trace 2 has an opening portion 23 , which is a disconnected portion.
- the opening portion 23 makes the GND trace 2 form a non-closed loop structure.
- the opening portion 23 has a length of approximately 5 mm to 10 mm, and the opening portion 23 is located on the DP (date pad) side.
- the date pad (DP) refers to four sides of a display panel.
- the function of providing the opening portion 23 is to facilitate the release of static electricity.
- the opening portion 23 can be provided on a date pad opposite (DPO) side, a gate pad left (GPL) side, or a gate pad right (GPR) side.
- the four intervals 22 are provided on the GND trace 2 , and the four intervals 22 and the opening portion 23 make the GND trace 2 form five conductive line segments 21 .
- the interval 22 on the GND trace 2 has a length of approximately 5 mm to 10 mm, or the conductive line segment 21 has a length of approximately 180 mm to 190 mm.
- the four intervals 22 are disposed respectively at four corners of the GND trace 2 .
- the array substrate of the example embodiment is rectangular with four corner portions, and the GND trace 2 is disposed along the peripheral edge of the array substrate. Therefore, the GND trace 2 also has four corner portions.
- the interval 22 on the GND trace 2 can be provided less or more, for example, three, five, seven, or eight intervals 22 can be provided.
- the positions of the intervals 22 may not be provided at the corners, so long as the lengths of the plurality of conductive line segments 21 are substantially uniform.
- the first insulating layer 51 is formed on a side of the GND trace 2 away from the base substrate 4 .
- the first electrode layer 7 is then formed on the side of the first insulating layer 51 away from the base substrate 4 .
- No first electrode layer 7 is disposed directly above the GND trace 2 . That is, an orthographic projection of the first electrode layer 7 on the base substrate 4 and an orthographic projection of the GND trace 2 on the base substrate 4 do not overlap each other.
- the first electrode layer 7 can be formed by the same patterning process as the pixel electrode of the display area 1 of the array substrate.
- the material of the first electrode layer 7 can be indium tin oxide or other conductive materials.
- the connection structure can include a second insulating layer 52 , a first connection portion 61 , and a first via hole 71 disposed on the first insulating layer 51 .
- the second insulating layer 52 is disposed on a side of the first electrode layer 7 away from the base substrate 4 . Since the first electrode layer 7 is not provided directly above the GND trace 2 , the second insulating layer 52 directly above the GND trace 2 is bonded to the first insulating layer 51 . Referring to FIG. 3 for a schematic cross sectional view taken along A-A in FIG. 2 , the first via hole 71 is disposed on the first insulating layer 51 , and a second via hole 72 is disposed on the second insulating layer 52 .
- the first insulating layer 51 and the second insulating layer 52 can be patterned once to form the first via hole 71 on the first insulating layer 51 and the second via hole 72 on the second insulating layer 52 .
- An orthographic projection of the first via hole 71 on the base substrate 4 covers an orthographic projection of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 . That is, the orthographic projection of the first via hole 71 on the base substrate 4 is at the same position as the orthographic position of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 , and the orthographic projection of the first via hole 71 on the base substrate 4 has an area larger than or equal to that of the orthographic position of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 .
- An orthographic projection of the second via hole 72 on the base substrate 4 covers the orthographic projection of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 . That is, the orthographic projection of the second via hole 72 on the base substrate 4 is at the same position as the orthographic position of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 , and the orthographic projection of the second via hole 72 on the base substrate 4 has an area larger than or equal to that of the orthographic position of the interval 22 between two adjacent conductive line segments 21 on the base substrate 4 .
- the second via hole 72 can have a size the same as or slightly larger than that of the first via hole 71 , and the second via hole 72 is at a position the same as that of the first via hole 71 .
- the first connection portion 61 is disposed on a side of the second insulating layer 52 away from the base substrate 4 , and the first connection portion 61 electrically connects the two adjacent conductive line segments 21 through the second via hole 72 and the first via hole 71 .
- the first connection portion 61 can be formed by the same patterning process as the common electrode of the display area 1 of the array substrate.
- the material of the first connection portion 61 can be indium tin oxide or other conductive materials.
- the first connection portion 61 is disposed at the uppermost layer of the array substrate, that is, the first connection portion 61 is formed at the last step, which can reduce the accumulation of static electricity generated in the previous process on the GND trace 2 .
- the GND trace 2 is designed in segments to form a plurality of conductive line segments 21 separated from each other, which can reduce the area of the GND trace 2 , reduce the static electricity accumulated on the GND trace 2 , and reduce the occurrence of ESD on the GND trace 2 and the conductive layer above the GND trace 2 which can, in turn, reduce damage caused by the accumulation of static electricity to the inside of the panel, and improve product yield.
- a plurality of fourth via holes 74 are disposed on the first insulating layer 51 , and a plurality of fifth via holes 75 are disposed on the first electrode layer 7 .
- the fifth via hole 75 is in communication with the fourth via hole 74
- a plurality of third via holes 73 are disposed on the second insulating layer 52 .
- the array substrate further includes a cell test pad (CT Pad) 8 , a second connection portion 62 , and a third connection portion 63 .
- the CT pad 8 is disposed on the base substrate 4 .
- the CT pad 8 can be disposed on the same layer as the GND trace 2 and the gate electrode of the display area 1 .
- the CT pad 8 , the GND trace 2 , and the gate electrode of the display area 1 are formed by the same patterning process.
- the second connection portion 62 is disposed in the fourth via hole 74 and the fifth via hole 75 .
- the second connection portion 62 can be formed by the same patterning process as the source electrode and drain electrode of the display area 1 of the array substrate.
- the CT pad 8 is electrically connected to the first electrode layer 7 through the second connection portion 62 .
- the third connection portion 63 is disposed on a side of the second insulating layer 52 away from the base substrate 4 .
- the third connection portion 63 is electrically connected to the second connection portion 62 through the third via hole 73 .
- the third connection portion 63 and the first connection portion 61 can be disposed on the same layer. That is, the third connection portion 63 can be formed by the same patterning process as the common electrode of the first connection portion 61 and the display area 1 of the array substrate. Similarly, the material of the third connection portion 63 can be indium tin oxide, or other conductive materials.
- the third connection portion 63 is connected to the GOA driving circuit 3 and inputs a driving signal to the GOA driving circuit 3 through the CT pad 8 , to drive the GOA driving circuit 3 .
- the present disclosure also provides a display panel including the array substrate described above.
- the specific structure of the array substrate has been described in detail above, which will not be repeated herein.
- the present disclosure also provides a display device including the display panel described above.
- the display panel includes the array substrate described above. The specific structure of the array substrate has been described in detail above, which will not be repeated herein.
- the terms “a”, “an”, “the”, and “said” are used to indicate the presence of one or more elements, components, or the like.
- the terms “comprising”, “including”, and “having” are used to mean open-ended inclusion and mean that there can be other elements, components, or the like in addition to the listed elements, components, or the like.
- the terms “first”, “second”, and “third” or the like are only used as references, not as a limit on the number of the objects.
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
Claims (13)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921986690.7U CN211150560U (en) | 2019-11-15 | 2019-11-15 | Array substrate, display panel and display device |
| CN201921986690.7 | 2019-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20210151469A1 US20210151469A1 (en) | 2021-05-20 |
| US11469256B2 true US11469256B2 (en) | 2022-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US16/831,144 Active 2040-12-24 US11469256B2 (en) | 2019-11-15 | 2020-03-26 | Array substrate, display panel and display device |
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| Country | Link |
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| US (1) | US11469256B2 (en) |
| CN (1) | CN211150560U (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271192B (en) * | 2020-09-29 | 2023-07-04 | 京东方科技集团股份有限公司 | Display substrate and display device thereof |
| CN112164690A (en) * | 2020-09-29 | 2021-01-01 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN112782884A (en) * | 2021-01-11 | 2021-05-11 | 远峰科技股份有限公司 | Anti-static display panel and display device |
| CN115332232B (en) * | 2022-08-17 | 2025-03-04 | 合肥京东方光电科技有限公司 | Display panel, display device, panel and method for manufacturing display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080079859A1 (en) * | 2006-09-28 | 2008-04-03 | Epson Imaging Devices Corporation | Liquid crystal display panel |
| CN103296021A (en) | 2012-06-29 | 2013-09-11 | 上海天马微电子有限公司 | TFT array substrate |
-
2019
- 2019-11-15 CN CN201921986690.7U patent/CN211150560U/en active Active
-
2020
- 2020-03-26 US US16/831,144 patent/US11469256B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080079859A1 (en) * | 2006-09-28 | 2008-04-03 | Epson Imaging Devices Corporation | Liquid crystal display panel |
| CN103296021A (en) | 2012-06-29 | 2013-09-11 | 上海天马微电子有限公司 | TFT array substrate |
Non-Patent Citations (1)
| Title |
|---|
| 1st Office Action dated Apr. 15, 2020 for Chinese Patent Application No. 201921986690.7. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN211150560U (en) | 2020-07-31 |
| US20210151469A1 (en) | 2021-05-20 |
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