US10638237B2 - Microphone and manufacturing method thereof - Google Patents
Microphone and manufacturing method thereof Download PDFInfo
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- US10638237B2 US10638237B2 US15/798,836 US201715798836A US10638237B2 US 10638237 B2 US10638237 B2 US 10638237B2 US 201715798836 A US201715798836 A US 201715798836A US 10638237 B2 US10638237 B2 US 10638237B2
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- diaphragm
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- fixed membrane
- layer
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/16—Mounting or tensioning of diaphragms or cones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/001—Moulding aspects of diaphragm or surround
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/003—Manufacturing aspects of the outer suspension of loudspeaker or microphone diaphragms or of their connecting aspects to said diaphragms
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2410/00—Microphones
- H04R2410/03—Reduction of intrinsic noise in microphones
Definitions
- the present disclosure relates to a microphone and a manufacturing method thereof, and more particularly, to a highly sensitive microelectromechanical system (MEMS) microphone capable of improving sensitivity while simplifying a process.
- MEMS microelectromechanical system
- a microelectromechanical system (MEMS) microphone is a device that converts an audio signal into an electrical signal and MEMS microphone is manufactured with a semiconductor batch process.
- MEMS microelectromechanical system
- the MEMS microphone Compared with an electrets condenser microphone (ECM) applied to most vehicles, the MEMS microphone has excellent sensitivity and low performance variations of products. Also, it can be microminiaturized and endurable to a change in an environment such as heat, humidity, and the like. Thus, recently, the development of the MEMS microphone is gradually replacing the ECMs.
- ECM electrets condenser microphone
- FIG. 1 is a cross-sectional view schematically showing a structure of a conventional commercial MEMS microphone.
- a conventional MEMS microphone has a structure in which a diaphragm 2 and a fixed membrane 3 are formed on a substrate 1 at regular intervals and a sacrificial layer 4 is supported therebetween.
- a plurality of holes 3 h of the fixed membrane 3 for air inflow are formed in the fixed membrane, and an air layer 5 is formed between the diaphragm 2 and the fixed membrane. Vibration displacement of the diaphragm 2 vibrated by a sound pressure input through the substrate hole 1 h is sensed by the fixed membrane 3 .
- the fixed membrane holes 3 h serves as a path for removing the sacrificial layer 4 between the fixed membrane 3 and the diaphragm 2 .
- the fixed membrane holes 3 h serves to reduce air damping when the diaphragm 2 is vibrated by the sound pressure.
- the air damping means that vibration of the diaphragm 2 is absorbed by the air and its pressure and the vibration displacement is suppressed. It is referred to as an air damping effect that sensitivity deterioration occurs due to suppression of the vibration displacement.
- the present disclosure provides a microphone and a manufacturing method thereof capable of lowering air damping and improving sensitivity.
- holes of a fixed membrane are omitted.
- a damping hole for reducing the air damping is also formed outside a diaphragm to connect the damping hole to a vibration space between the fixed membrane and the diaphragm.
- the microphone including: a fixed membrane disposed on a substrate; a diaphragm spaced apart from the fixed membrane, wherein an air layer is positioned between the fixed membrane and the diaphragm; a supporting layer configured to support the diaphragm on the fixed membrane; and a damping hole configured to flow air in the air layer to a non-sensing area of the supporting layer.
- the damping hole may be disposed at regular intervals in the non-sensing area of the supporting layer from a center of the diaphragm.
- the damping hole may include: a through hole configured to vertically penetrate the non-sensing area of the supporting layer; and a connection passage configured to connect a lower portion of the through hole to the air layer disposed in a horizontal direction.
- connection passage may include a plurality of through holes having a fine slit structure.
- the through hole may be disposed in a plurality of rows from the center of the diaphragm.
- connection passage may be formed by forming a sacrificial pattern on parts of upper surfaces of the substrate and on the fixed membrane and removing the sacrificial pattern with the through hole after forming the through hole on the sacrificial pattern.
- the sacrificial pattern may be formed by patterning a photoresist on the parts of the upper surfaces of the substrate.
- the diaphragm may be formed on a release layer of a second substrate and is transferred to an upper portion of the supporting layer such that the diaphragm attaches to the supporting layer.
- the diaphragm may include: a vibration electrode configured to vibrate corresponding to an external sound source, wherein an upper portion of the vibration electrode is exposed; a conductive line connected to the vibration electrode; and a second pad electrically connected to a semiconductor chip that is configured to process a signal sensed by the vibration electrode.
- the diaphragm may be formed at once by patterning one conductive material.
- the fixed membrane may include a fixed electrode configured to sense vibration displacement of the diaphragm.
- the fixed electrode may form a sensing area having a size corresponding to a size of a sensing area of the diaphragm.
- the method for manufacturing the microphone including: a) forming an oxide film and a fixed membrane on the first substrate and forming a sacrificial pattern on parts of upper surfaces of the oxide film and the fixed membrane; b) forming a sacrificial layer on the parts of the upper surfaces of the oxide film and the fixed membrane and removing a center portion of the sacrificial layer to form the air layer and a supporting layer, wherein the supporting layer is configured to support an edge portion of a diaphragm; c) forming a through hole configured to vertically penetrate the supporting layer, removing the sacrificial pattern with the through hole, and forming a damping hole configured to flow air in the air layer to a non-sensing area of the supporting layer; and d) forming a release layer and the diaphragm on a second substrate and attaching the diaphragm to an upper surface of the supporting layer.
- the sacrificial layer may be formed by depositing any one of silicon oxide, a photosensitive material, or silicon nitride.
- the fixed membrane in the step a) may include: a fixed electrode configured to sense vibration displacement of the diaphragm; a conductive line connected to the fixed electrode; and a first pad electrically connected to a semiconductor chip that is configured to process a signal sensed by the fixed electrode.
- the fixed membrane may be formed at once by patterning one conductive material.
- the step c) may include: forming the through hole by dry etching or wet etching until the sacrificial pattern is exposed.
- the step d) may include: forming the diaphragm by patterning gold on an upper surface of the release layer.
- the step d) may include: positioning the second substrate such that the diaphragm is formed downwardly on an upper side of the first substrate, wherein the supporting layer is formed on the first substrate; attaching a lower surface of the diaphragm to an upper surface of the supporting layer by lowering the second substrate; and separating the diaphragm from the release layer by lifting the second substrate.
- the damping hole may be disposed in the non-sensing area outside the sensing area without forming the hole in the fixed membrane, thereby reducing the air damping without reducing the sensing area.
- some forms of the present disclosure may improve sensitivity decrease due to the hole in the fixed membrane.
- Some forms of the present disclosure may omit the holes in the fixed membrane to broaden the sensing area, thereby realizing a highly sensitive microphone.
- some forms of the present disclosure may omit a sacrificial layer removing process using the fixed membrane hole by removing the sacrificial layer before forming the diaphragm using the transfer process of a metal thin film.
- FIG. 1 is a cross-sectional view schematically showing a structure of a conventional commercial MEMS microphone.
- FIG. 2 schematically shows a planar structure of a microphone
- FIG. 3 is a sectional view taken on line A-A′ of the microphone
- FIG. 4 shows a comparison of a sensitivity analysis result between the microphone structure
- FIG. 5 to FIG. 15 are views showing a method of manufacturing the microphone.
- FIG. 16 is a cross-sectional view illustrating configuration of the microphone.
- a sound source input to a microphone has the same meaning as that of a sound or a sound pressure vibrating a diaphragm.
- FIG. 2 schematically shows a planar structure of a microphone in some forms of the present disclosure.
- FIG. 3 is a sectional view taken on line A-A′ of the microphone in some forms of the present disclosure.
- the microphone 100 includes a substrate 110 , a diaphragm 120 , a fixed membrane 130 , a supporting layer 140 , and a damping hole 150 .
- the substrate 110 may be made of silicon.
- the diaphragm 120 and the fixed membrane 130 may be disposed spaced apart from each other with an air layer 145 disposed therebetween, and the supporting layer 140 may be formed between the diaphragm and the fixed membrane to support the diaphragm.
- An oxide film 115 may be formed between the substrate 110 and the fixed membrane 130 .
- the oxide film 115 may be formed by depositing silicon oxide on the substrate 110 .
- the diaphragm 120 Since a top surface of the diaphragm 120 is opened, the diaphragm may vibrate by a sound source transmitted from the outside.
- the diaphragm 120 may be formed of a polysilicon or a silicon nitride, but, without being limited thereto, any material may be applied as long as it has conductivity.
- the diaphragm 120 includes a vibration electrode 121 that vibrates by an external sound source and is a sensing area inside a border of the sensing area, a conductive line 122 that electrically connects the vibration electrode 120 to a second pad 123 , and the second pad 123 electrically connected to a semiconductor chip that processes a signal sensed by the vibration electrode.
- the vibration electrode 121 , the conductive line 122 , and the second pad 123 may be formed by patterning gold (Au).
- Au gold
- the present disclosure is not limited thereto and a conductive material usable as an electrode may be patterned to be formed at a time.
- the diaphragm 120 may be formed on a release layer of a second substrate provided separately using a transfer process described below, and may be transferred to an upper surface of the supporting layer 140 to be attached to the supporting layer.
- the fixed membrane 130 may be spaced apart from the diaphragm 120 with the air layer 145 that is interposed therebetween and forms a vibration space.
- the fixed membrane 130 may be formed of a material having conductivity.
- the fixed membrane 130 may include a fixed electrode 131 for sensing vibration displacement of the diaphragm 120 , a conductive line 132 connected to the fixed electrode, and a first pad 133 electrically connected to the conductive line and electrically connected to a semiconductor chip that processes a signal sensed by the fixed electrode.
- the fixed electrode 131 may be formed to have a size corresponding to the border of the sensing area of the facing vibration electrode 121 so that the fixed electrode forms a substantial sensing area of the fixed membrane 130 .
- An edge of the diaphragm 120 may be supported and fixed by the supporting layer 140 including oxide.
- the supporting layer 140 may support the diaphragm 120 on the fixed membrane 130 and the oxide film 115 , and may form the air layer 145 that forms the vibration space of the diaphragm 120 in a center portion thereof.
- the supporting layer 140 may be referred to as a sacrificial layer 140 ′ until the center portion is etched and removed in a microphone manufacturing process described later.
- a center portion of the sacrificial layer 140 ′ may be removed before forming the diaphragm 120 and the diaphragm 120 may be attached to the supporting layer 140 using the transfer process.
- the fixed membrane 130 may have a structure capable of improving sensitivity of the microphone by omitting the fixed membrane hole unlike the conventional commercial MEMS microphone to maximize the sensing area.
- the microphone 100 includes the damping hole 150 connected to the air layer 145 so that the air in the air layer 145 flows into a non-sensing area outside the sensing area of the diaphragm on the supporting layer 140 in order to reduce air damping.
- an entire area of the microphone 100 may be divided into the internal sensing area and the external non-sensing area with respect to the border of the sensing area of the diaphragm 120 .
- a shape of the border of the sensing area may be a circle formed by the vibration electrode 121 and the fixed electrode 131 .
- the damping hole 150 may be disposed in a circular shape at regular intervals in the non-sensing area of the supporting layer 140 with respect to the center of the diaphragm 120 .
- this form of the present disclosure is not limited to the circular arrangement, and the damping hole 150 may be arranged in the non-sensing area formed based on the shape of the border of the sensing area.
- the damping hole 150 includes a through hole 151 vertically penetrating the non-sensing area of the supporting layer 140 and a connection passage 152 connecting a lower portion of the through hole 151 to the horizontal air layer 145 .
- the through hole 151 may be formed by etching the supporting layer 140 until the oxide film 115 is exposed.
- connection passage 152 may be a passage connecting the through hole 151 to the air layer 145 .
- connection passage 152 may be formed by forming a photoresist PR on parts of upper surfaces of the oxide film 115 and the fixed membrane 130 and removing the PR after the through hole 151 is formed.
- the damping holes 150 may be disposed at predetermined intervals in the non-sensing area of the supporting layer 140 with respect to a center of the diaphragm 120 .
- the damping hole 150 may reduce influence of the air damping upon vibration of the diaphragm 120 according to an external sound source even when a conventional fixed membrane hole is omitted, thereby improving sensitivity of the microphone 100 .
- FIG. 4 shows a comparison of a sensitivity analysis result between the microphone structure in some forms of the present disclosure and a conventional structure.
- FIG. 4 shown are the conventional structure with holes of a fixed membrane, a structure without holes of a fixed membrane and without a damping hole, and a structure without a hole of the fixed membrane and with the damping hole 150 in some forms of the present disclosure.
- the fixed membrane and the diaphragm of the structures may have same material and same size.
- FIG. 4 shows an experimental result of the sensitivity and frequency response characteristics of the structures.
- the experiment or the analysis result confirms that the structure of the microphone 100 in some forms of the present disclosure increases the sensing area by omitting the conventional fixed membrane hole and increases the sensitivity and frequency response range by reducing the air damping during vibration of the diaphragm.
- the microphone 100 may arrange the damping holes in the non-sensing area without the fixed membrane hole to solve a problem of sensitivity decrease due to the fixed membrane hole.
- the conventional fixed membrane hole may be used as a passage for removing the sacrificial layer between the fixed membrane and the diaphragm, whereas the microphone 100 in some forms of the present disclosure may have the structure without the fixed membrane hole.
- the conventional structure may be used as a passage for removing the sacrificial layer between the fixed membrane and the diaphragm
- the microphone 100 in some forms of the present disclosure may have the structure without the fixed membrane hole.
- the microphone 100 may remove a sacrificial layer removing process by using the transfer process of a metal thin film to form the air layer 145 between the fixed membrane 130 and the diaphragm 120 .
- FIG. 5 to FIG. 15 are views showing a method of manufacturing the microphone in some forms of the present disclosure.
- the oxide film 115 may be formed on the first substrate 110 after the first substrate 110 is prepared.
- the first substrate 110 may be formed of silicon, and the oxide film 115 may be formed by depositing silicon oxide.
- the fixed membrane 130 may be patterned on the oxide film 115 and a sacrificial pattern 162 ′ may be formed on parts of upper surfaces of the oxide film 115 and the fixed membrane 130 .
- the fixed membrane 130 includes the fixed electrode 131 , the conductive line 132 , and the first pad 133 , and may be formed at a time by patterning one conductive material.
- the sacrificial pattern 162 ′ may be formed by patterning a photoresist (PR) layer on the parts of the upper surfaces.
- PR photoresist
- the sacrificial layer 140 ′ may be formed on the oxide film 115 on which the fixed membrane 130 and the sacrificial pattern 162 ′ are formed.
- the sacrificial layer 140 ′ may be formed by depositing any one of silicon oxide, a photosensitive material, and silicon nitride.
- a portion of the sacrificial layer 140 ′ may be patterned to form the air layer 145 , the through hole 151 , and a contact hole H.
- the sacrificial layer 140 ′ may be removed by a wet method using an etching solution or an a dry method in which ashing is performed using 02 plasma so that the air layer 145 , the through holes 151 , and the contact hole H is formed at a same time.
- the remaining sacrificial layer 140 ′ may form the supporting layer 140 that supports an edge portion of the diaphragm 120 .
- the sacrifice layer 140 ′ is removed before forming the diaphragm 120 , it may be possible to omit the sacrificial layer removing process using the fixed membrane hole.
- the through hole 151 may be formed by performing dry etching or wet etching until the sacrificial pattern 162 ′ is exposed.
- the contact hole H may be formed by performing dry etching or wet etching until the first pad 133 of the fixed membrane 130 is exposed.
- the sacrificial pattern 162 ′ may be removed through the through hole 151 to form the connection passage 152 connected to the air layer 145 .
- the damping hole 150 may be formed so that the air in the air layer 145 flows outside the border of the sensing area of the diaphragm 120 through the through hole 151 .
- the damping hole 160 may serve to improve sensitivity of the microphone 100 by reducing influence of the air damping when the diaphragm 120 vibrates according to the external sound source.
- the release layer 220 may be deposited on an upper surface of the second substrate 210 after the second substrate including the non-sensing area stepped in a lower direction is prepared.
- the diaphragm 120 may be formed on an upper surface of the release layer 220 .
- the diaphragm 120 includes the vibration electrode 121 , the conductive line 122 , and the second pad 123 and may be formed by patterning gold (Au). However, the present disclosure is not limited thereto and a conductive material usable as an electrode may be patterned to be formed at a time.
- the second substrate 210 at which the diaphragm 120 facing downward is formed may be positioned at an upper side of the first substrate 110 at which the supporting layer 140 is formed.
- the second substrate 210 may be aligned by a transfer device at a position in which the sensing area of the diaphragm 120 corresponds to the sensing area of the fixed membrane 130 formed at the first substrate 110 .
- the second substrate 210 may be lowered to attach a lower surface of the diaphragm 120 to an upper surface of the supporting layer 140 formed at the first substrate 110 .
- the second substrate 210 may be lifted so that the diaphragm 120 is picked up or attached on an upper surface of the supporting layer 140 . At this time, the diaphragm 120 may be separated from the release layer 220 of the second substrate 210 .
- the microphone 100 shown in FIG. 3 may be manufactured.
- a structure for fixing an edge of the diaphragm 120 may be further formed in the microphone 100 .
- the damping hole may be disposed in the non-sensing area outside the sensing area, thereby reducing the air damping without reducing the sensing area.
- some forms of the present disclosure may improve sensitivity decrease due to the hole of the fixed membrane.
- Some forms of the present disclosure may omit the holes in the fixed membrane to maximize the sensing area, thereby realizing a highly sensitive microphone.
- some forms of the present disclosure may omit the sacrificial layer removing process using the fixed membrane hole by removing the sacrificial layer before forming the diaphragm using the transfer process of a metal thin film.
- the through hole 151 of the damping hole 150 is disposed in one row in some forms of the present disclosure shown in FIGS. 2 and 3 , the present disclosure is not limited thereto and the following other modification of the disclosure is possible.
- FIG. 16 is a cross-sectional view illustrating configuration of the microphone according to another form of the present disclosure.
- the damping hole 150 ′ of the microphone 100 ′ in another form of the present disclosure includes a plurality of through holes 151 ′ that have a fine slit structure and are connected to the connection passage 152 .
- the through hole 151 ′ may be disposed in a plurality of rows with respect to a center of the diaphragm 120 .
- the damping hole 150 ′ may include the elongated through holes 151 ′ that have a slit structure and are connected to the connection passage 152 so that the damping hole allows air in the air layer 145 to flow outside the sensing area.
- the through holes 151 ′ of the slit structure may flow air, the through holes may increase the sensitivity by making it impossible to flow the sound source via the through holes.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Description
- 100: microphone
- 110: substrate
- 115: oxide film
- 120: diaphragm
- 130: fixed membrane
- 140: supporting layer
- (140′: sacrificial layer)
- 145: air layer
- 150: damping hole
- 151: through hole
- 152: connection passage
- (162′: sacrificial pattern)
Claims (16)
Applications Claiming Priority (2)
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KR10-2017-0062453 | 2017-05-19 | ||
KR1020170062453A KR102322258B1 (en) | 2017-05-19 | 2017-05-19 | Microphone and manufacturing method thereof |
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US20180338208A1 US20180338208A1 (en) | 2018-11-22 |
US10638237B2 true US10638237B2 (en) | 2020-04-28 |
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US15/798,836 Active 2038-01-30 US10638237B2 (en) | 2017-05-19 | 2017-10-31 | Microphone and manufacturing method thereof |
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US (1) | US10638237B2 (en) |
KR (1) | KR102322258B1 (en) |
CN (1) | CN108966098B (en) |
DE (1) | DE102017126208B4 (en) |
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CN109195075B (en) * | 2018-11-29 | 2024-04-12 | 华景科技无锡有限公司 | Microphone vibrating diaphragm and microphone |
CN110085580B (en) * | 2019-05-27 | 2024-05-24 | 星科金朋半导体(江阴)有限公司 | Chip packaging structure of implanted damper and packaging method thereof |
CN111675189B (en) * | 2020-06-12 | 2023-11-21 | 湖南威斯特机电科技有限公司 | Micro-electromechanical device and manufacturing method thereof |
CN116982759A (en) * | 2023-09-26 | 2023-11-03 | 苏州敏芯微电子技术股份有限公司 | Airflow sensor and airflow sensor packaging structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020067663A1 (en) * | 2000-08-11 | 2002-06-06 | Loeppert Peter V. | Miniature broadband acoustic transducer |
KR20100086783A (en) | 2009-01-23 | 2010-08-02 | 주식회사 이노칩테크놀로지 | Ceramic vibrating unit |
KR20140028467A (en) | 2012-08-29 | 2014-03-10 | 한국전자통신연구원 | Mems acoustic sensor and fabrication method thereof |
US9199837B2 (en) * | 2010-05-11 | 2015-12-01 | Omron Corporation | Acoustic sensor and method of manufacturing the same |
KR20160087694A (en) | 2015-01-14 | 2016-07-22 | 삼성전기주식회사 | Acoustic transducer and manufacturing method threrof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08240502A (en) | 1995-03-03 | 1996-09-17 | Omron Corp | Capacitive pressure sensor |
JP3440037B2 (en) | 1999-09-16 | 2003-08-25 | 三洋電機株式会社 | Semiconductor device, semiconductor electret condenser microphone, and method of manufacturing semiconductor electret condenser microphone. |
ATE392790T1 (en) * | 2000-08-11 | 2008-05-15 | Knowles Electronics Llc | RAISED MICROSTRUCTURES |
JP2002134806A (en) * | 2000-10-19 | 2002-05-10 | Canon Inc | Piezoelectric film actuator, liquid injection head, and method of manufacturing the same |
JP2002345088A (en) | 2001-05-18 | 2002-11-29 | Mitsubishi Electric Corp | Pressure sensing device and manufacturing method for semiconductor substrate used for it |
JP2010098518A (en) * | 2008-10-16 | 2010-04-30 | Rohm Co Ltd | Method of manufacturing mems sensor, and mems sensor |
JP5987572B2 (en) * | 2012-09-11 | 2016-09-07 | オムロン株式会社 | Acoustic transducer |
CN103561376B (en) | 2013-10-15 | 2017-01-04 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and manufacture method thereof |
CN105338457B (en) | 2014-07-30 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
AU2014407088B2 (en) | 2014-09-26 | 2021-09-23 | Somalogic Operating Co., Inc. | Cardiovascular risk event prediction and uses thereof |
US10006824B2 (en) | 2014-09-29 | 2018-06-26 | Invensense, Inc. | Microelectromechanical systems (MEMS) pressure sensor having a leakage path to a cavity |
-
2017
- 2017-05-19 KR KR1020170062453A patent/KR102322258B1/en active IP Right Grant
- 2017-10-31 US US15/798,836 patent/US10638237B2/en active Active
- 2017-11-09 DE DE102017126208.3A patent/DE102017126208B4/en active Active
- 2017-11-29 CN CN201711224635.XA patent/CN108966098B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020067663A1 (en) * | 2000-08-11 | 2002-06-06 | Loeppert Peter V. | Miniature broadband acoustic transducer |
US6535460B2 (en) * | 2000-08-11 | 2003-03-18 | Knowles Electronics, Llc | Miniature broadband acoustic transducer |
KR20100086783A (en) | 2009-01-23 | 2010-08-02 | 주식회사 이노칩테크놀로지 | Ceramic vibrating unit |
US9199837B2 (en) * | 2010-05-11 | 2015-12-01 | Omron Corporation | Acoustic sensor and method of manufacturing the same |
KR20140028467A (en) | 2012-08-29 | 2014-03-10 | 한국전자통신연구원 | Mems acoustic sensor and fabrication method thereof |
KR20160087694A (en) | 2015-01-14 | 2016-07-22 | 삼성전기주식회사 | Acoustic transducer and manufacturing method threrof |
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CN108966098A (en) | 2018-12-07 |
CN108966098B (en) | 2021-06-22 |
DE102017126208B4 (en) | 2022-12-22 |
US20180338208A1 (en) | 2018-11-22 |
KR102322258B1 (en) | 2021-11-04 |
DE102017126208A1 (en) | 2018-11-22 |
KR20180127090A (en) | 2018-11-28 |
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