CN105338457B - MEMS microphone and forming method thereof - Google Patents
MEMS microphone and forming method thereof Download PDFInfo
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- CN105338457B CN105338457B CN201410370628.0A CN201410370628A CN105338457B CN 105338457 B CN105338457 B CN 105338457B CN 201410370628 A CN201410370628 A CN 201410370628A CN 105338457 B CN105338457 B CN 105338457B
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Abstract
A kind of MEMS microphone and forming method thereof, it is characterised in that the forming method of MEMS microphone includes：The first wafer is provided, front includes vibrating area and Support formed with conductive plate, conductive plate；Corresponding vibration zone position, forms some through holes in conductive plate；Corresponding vibrating area and support zone position, on conductive plate and form the first sacrifice layer in through hole；Corresponding support zone position, forms some grooves, groove runs through the first sacrifice layer side wall in the first sacrifice layer；The second sacrifice layer is formed in a groove；Vibrating membrane is formed on first and second sacrifice layer；Corresponding vibration zone position, back of the body chamber is formed in the first wafer rear, and remove the first sacrifice layer and the second sacrifice layer of corresponding vibration zone position.Air in MEMS microphone gap is discharged through groove, and damping of the air to sound transmission weakens, and reaches that the acoustic energy of vibrating membrane is larger, improves the sensitivity of MEMS microphone, the performance of MEMS microphone is preferable.
Description
Technical field
The present invention relates to MEMS technology field, more particularly to a kind of MEMS microphone and forming method thereof.
Background technology
Using the MEMS microphone of MEMS (MEMS, Micro-Electro-Mechanical System) technique
The characteristics of minimizing due to it and be lightening, is just gradually substituting traditional electric capacitor microphone (Electret
Capacitance Microphone, ECM).
Reference picture 1, a kind of existing MEMS microphone include：
Conductive plate 1；
Some through holes 11 being spaced apart in conductive plate 1；
Vibrating membrane 2 on conductive plate 1, the supporting layer 4 between vibrating membrane 2 and conductive plate 1, supporting layer 4
For supporting vibrating membrane 2.Supporting layer 4 is ring seal structure, and supporting layer 4 surrounds gap 3, and gap 3 is that vibrating membrane 2 provides vibration
Space.Conductive plate 1 and vibrating membrane 2 electrically connect with external circuit, and conductive plate 1 forms an electric capacity with vibrating membrane 2.Work as sound
When acting on the upper surface of vibrating membrane 2, vibrating membrane 2 can be caused to vibrate, change the spacing between conductive plate 1 and vibrating membrane 2, draw
Capacitance variation is played, so as to realize that voice signal is converted into electric signal.
But existing MEMS microphone performance is bad.
The content of the invention
The present invention solves the problems, such as it is that existing MEMS microphone performance is bad.
To solve the above problems, the present invention provides a kind of forming method of MEMS microphone, the formation of the MEMS microphone
Method includes：
The first wafer is provided, first wafer has front and back, described in the front formed with conductive plate
Conductive plate includes vibrating area and around the Support of the vibrating area；
The corresponding vibration zone position, forms some through holes being spaced apart in the conductive plate；
The corresponding vibrating area and support zone position, on the conductive plate and form the first sacrifice layer in through hole；
The position of the corresponding Support, forms some grooves in first sacrifice layer, and some grooves are along ring
Circumferential direction around vibrating area is spaced apart, and the groove runs through the first sacrifice layer side wall；
The second sacrifice layer is formed in the groove, the material of second sacrifice layer and the material of the first sacrifice layer are not
Together；
Vibrating membrane is formed on first sacrifice layer and the second sacrifice layer；
The corresponding vibration zone position, back of the body chamber is formed in first wafer rear, the back of the body chamber is running through the first wafer just
Face, afterwards, remove the first sacrifice layer and the second sacrifice layer of corresponding vibration zone position.
Alternatively, the spacing range between the vibrating membrane and conductive plate is 0.5 μm~5 μm.
Alternatively, the material of the vibrating membrane is SiGe, Si or Al.
Alternatively, the material of the vibrating membrane is SiGe, and the material of first sacrifice layer is Ge, second sacrifice layer
Material be SiO2Or Si3N4。
Alternatively, the method for the first sacrifice layer and the second sacrifice layer that remove corresponding vibration zone position includes：
Etch for the first time, remove the first sacrifice layer of corresponding vibration zone position to exposing the second sacrifice layer；
Second of etching, removes second sacrifice layer.
Alternatively, the first time etching is dry etching or wet etching.
Alternatively, second of etching is wet etching, and the etching agent used is dilute hydrofluoric acid solution, in the hydrogen
In fluorspar acid solution, the volume ratio of each composition is H2O:HF=100:1~50:1, the temperature range of solution is 22.5 DEG C~23.5
DEG C, etch period scope 5min~25min.
Alternatively, the method for back of the body chamber is formed in first wafer rear to be included：
Passivation layer is formed in first wafer frontside and vibrating membrane, the passivation layer of first wafer frontside, which is higher than, to shake
Dynamic film；
The second wafer is provided, second wafer has front and back；
First wafer is overturn, the passivation layer is bonded with the second wafer frontside；
Back of the body chamber is formed in first wafer rear；
After the first sacrifice layer and the second sacrifice layer of corresponding vibration zone position is removed, by the passivation layer and the second wafer
Peel off.
Alternatively, before the conductive plate is formed, 3rd sacrifice layer, the conduction are formed in first wafer frontside
Pole plate covers 3rd sacrifice layer；
When removing first sacrifice layer, the 3rd sacrifice layer of corresponding vibration zone position is also removed.
Alternatively, the quantity of first sacrifice layer is two layers, and two layers first sacrifices are laminated together；
Top layer the first sacrifice layer further groove distribution density is less than bottom the first sacrifice layer further groove distribution density.
The present invention also provides a kind of MEMS microphone, and the MEMS microphone includes：
First wafer, first wafer have front and back, in the front formed with conductive plate, the conduction
Pole plate includes vibrating area and around the Support of the vibrating area；
The position of the corresponding vibrating area, positioned at the back of the body chamber of first wafer rear, the back of the body chamber exposes conductive plate；
The corresponding vibration zone position, some through holes being spaced apart in the conductive plate；
Vibrating membrane on the conductive plate, the first sacrifice layer between the conductive plate and vibrating membrane,
First sacrifice layer corresponds to the position of the Support, the position of the corresponding vibrating area, the vibrating membrane and conductive plate
Between there is gap；
Some grooves in first sacrifice layer, some grooves are along around the circumferential direction interval of vibrating area
Distribution, the groove run through the two side of the first sacrifice layer.
Alternatively, the spacing range between the vibrating membrane and conductive plate is 0.5 μm~5 μm.
Alternatively, the material of the vibrating membrane is SiGe, Si or Al.
Alternatively, the material of the vibrating membrane is SiGe, and the material of first sacrifice layer is Ge.
Alternatively, in addition to：The corresponding support zone position, between the front of first wafer and conductive plate
3rd sacrifice layer.
Alternatively, the quantity of first sacrifice layer is two layers, and two layers first sacrifices are laminated together；
Top layer the first sacrifice layer further groove distribution density is less than bottom the first sacrifice layer further groove distribution density.
Compared with prior art, technical scheme has advantages below：
After the first sacrifice layer and the second sacrifice layer of corresponding vibrating area is removed, corresponding second sacrifices in the first sacrifice layer
The position of layer forms groove, and the groove run through the first sacrifice layer side wall, connects gap between vibrating membrane and conductive plate and outside
Portion's environment.When MEMS microphone works, sound acts on vibrating membrane upper surface, and vibrating membrane is pressurized and vibrated towards conductive plate
Cause air compression in gap between vibrating membrane and conductive plate.Because the air between vibrating membrane and conductive plate in gap can
To be communicated by the groove in the first sacrifice layer with outside air, the air of compression can discharge from gap, to vibrate
Pressure between film and conductive plate in gap tends to balance with external environment pressure, reduces air compression and vibrating membrane is moved
Obstruction.So, the acoustic energy overwhelming majority for acting on vibrating membrane upper surface or even the machinery for being completely converted into vibrating membrane shake
It is dynamic, increase MEMS Q values, improve the sensitivity of MEMS microphone, the performance of MEMS microphone is preferable.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the MEMS microphone of prior art；
Fig. 2~Figure 19 is schematic diagram of the MEMS microphone in forming process each stage of the specific embodiment of the invention.
Embodiment
The problem of inventor exists for prior art is analyzed, and finds：Reference picture 1, sky in gap 3 be present
Gas, cause the vibration of vibrating membrane 2 when sound acts on the upper surface of vibrating membrane 2, can be empty with compression section when vibrating membrane 2 vibrates
Gas is moved along direction A towards conductive plate 1, and the air is discharged by through hole 11.But also B flows partial air in the horizontal direction
Dynamic, because supporting layer 4 is ring seal space, this partial air can not be discharged, and the motion of vibrating membrane 2 can be hindered to be hindered to be formed
Buddhist nun.So, act in the acoustic energy on vibrating membrane 2, a part is converted into the vibration mechanical energy of vibrating membrane 2, another part
Consumed by air damping.The acoustic energy and the energy ratio of air consumption acted on vibrating membrane 2 is represented with Q, due to sky
Gas consumes acoustic energy so that and Q is reduced, and is reached the sound energy value of vibrating membrane 2 and is reduced, and the vibration amplitude of vibrating membrane 3 can reduce,
The sensitivity of vibrating membrane 3 is reduced, causes the sensitivity of MEMS microphone to decline, performance is bad, as wave volume is relatively low.
On the other hand, inventors herein propose a kind of new MEMS microphone and forming method thereof.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Reference picture 2, Fig. 3, Fig. 2 are top view, and Fig. 3 is cross-sectional views of the Fig. 2 along AA directions, there is provided the first wafer
10, the first wafer 10 has positive S1 and back side S2, positive S1 formed with 3rd sacrifice layer 33, in 3rd sacrifice layer 33
Conductive plate 11.Conductive plate 11 includes vibrating area I, the Support II around vibrating area I, being electrically connected outside the II of Support
Meet area III.
In a particular embodiment, 3rd sacrifice layer 33 and the forming method of conductive plate 11 include：In the first wafer 10 just
Face sacrificial material layer, the conductive material layer in sacrificial material layer；Then using photoetching, etching technics, to sacrificing material
The bed of material and conductive material layer are patterned, and are correspondingly formed 3rd sacrifice layer 33 and conductive plate 11.
It should be noted that the Support II of the present embodiment is ring seal structure, example effect is only played.As deformation
Example, Support II are alternatively mutually discrete multiple, circumferential direction intervals point of the plurality of Support II along circular vibrating area I
Cloth.
In a particular embodiment, conductive plate 11 is conductive, the bottom crown as MEMS microphone.3rd sacrifice layer
33 are used for isolating the wafer 10 of conductive plate 11 and first, prevent from that impurity diffusion occurs between the two, while can also prevent from leaking electricity.It is right
The material of 3rd sacrifice layer 33 and conductive plate 11, both etching selection ratio requirements under same etching condition need to be considered.Example
Such as, under conditions of subsequent etching 3rd sacrifice layer 33, conductive plate 11 has smaller etching selection with respect to 3rd sacrifice layer 33
Than, in case conductive plate 11 is etched.In the present embodiment, the material of conductive plate 11 is SiGe, the material of 3rd sacrifice layer 33
Expect for Ge.But other materials also may be selected in not limited to this, in addition, the material of conductive plate and 3rd sacrifice layer, to meet
The requirement of above-mentioned etching selection ratio.
In a particular embodiment, the first wafer 10 can be Silicon Wafer or germanium, germanium silicon, gaas wafer or exhausted
Silicon Wafer on edge body.Those skilled in the art can select wafer as needed, therefore the type of wafer should not limit this hair
Bright protection domain.The first wafer 10 selection Silicon Wafer in the present embodiment, will because implementing the technical program on Silicon Wafer
Cost than implementing the technical program on other above-mentioned wafers is low.
Reference picture 4, Fig. 5, Fig. 4 are top view, and Fig. 5 is cross-sectional views of the Fig. 4 along BB directions, corresponding vibrating area I
Position, some through holes 110 being spaced apart are formed in conductive plate 11, through hole 110 exposes 3rd sacrifice layer 33.Through hole
110 aperture and distribution density can be set according to product requirement, not form limiting the scope of the invention.
In a particular embodiment, the forming method of through hole 110 includes：Patterned mask layer is formed on conductive plate 11
(not shown), such as photoresist layer, the patterned mask layer define the position of through hole；Then, with patterned mask
Layer is mask, and etching conductive pole plate 11 is to form some through holes 110 being spaced apart；Patterned mask layer is removed afterwards.
With reference to reference picture 6, Fig. 7, Fig. 6 is top view, and Fig. 7 is cross-sectional views of the Fig. 6 along CC directions, corresponding vibration
Area I and Support II position, the first sacrifice layer 31 is formed on conductive plate 11 and in through hole 110, first in through hole 110
Sacrifice layer is held substantially higher than the first sacrifice layer in conductive plate 11 and through hole 110 with the first sacrifice layer on conductive plate 11
It is flat.
In the present embodiment, the material of the first sacrifice layer 31 is identical with the material of 3rd sacrifice layer 33, and so follow-up first
Sacrifice layer 31 and 3rd sacrifice layer 33 can remove in same etch step, and this can save the process time.In addition, first
Sacrifice layer 31 also can be different from the material of 3rd sacrifice layer 33.The forming method of first sacrifice layer 31 includes：Deposited sacrificial material
Layer, sacrificial material layer covering conductive plate 11 simultaneously fill full through hole 110；Then expendable material layer surface is carried out at planarization
Reason, such as cmp；And then, using photoetching, etching technics, the sacrificial layer material floor for electrically connecting area III positions is removed
Part, the corresponding vibrating area I of conductive plate 11 and the remaining sacrificial material layer in Support II positions are as the first sacrifice layer 31.
With reference to reference picture 8, Fig. 9, Fig. 8 is top view, and Fig. 9 is cross-sectional views of the Fig. 8 along DD directions, corresponding support
Area II position, some grooves 310 are formed in the first sacrifice layer 31, some grooves 310 are along around vibrating area I circumference side
To being spaced apart, groove 310 runs through the side wall of the first sacrifice layer 31.Groove 310 is in MEMS microphone as the upper and lower pole of discharge
The passage of air between plate.
In a particular embodiment, some grooves 310 are formed using photoetching, etching technics.To the feature chi of groove 310
It is very little, it can be set, be will not be repeated here according to product requirement.
In the present embodiment, groove 310 does not expose conductive plate 11.But not limited to this, as variation, if groove reveals
It is also feasible to go out conductive plate.
With reference to reference picture 10, Figure 11, Figure 10 is top view, and Figure 11 is cross-sectional views of the Figure 10 along EE directions,
The second sacrifice layer 32, the full groove 310 of the second sacrifice layer 32 filling, the surface and first of the second sacrifice layer 32 are formed in groove 310
Remain basically stable on the surface of sacrifice layer 31.
In the present embodiment, the material of the second sacrifice layer 32 is different from the material of the first sacrifice layer 31.The is removed follow-up
During two sacrifice layers, the first sacrifice layer of support zone position will not be removed.The material of corresponding first sacrifice layer 31 is Ge, and second sacrifices
The material selection SiO of layer 322Or Si3N4.In addition, the first sacrifice layer 31, the material of the second sacrifice layer 32 can also be that other can
Row material.
Reference picture 12, Figure 13, Figure 12 are top view, and Figure 13 is cross-sectional views of the Figure 12 along FF directions, repeat shape
Into once, two being formed on conductive plate 11 the step of the first sacrifice layer 31, groove 310 (reference picture 9) and the second sacrifice layer 32
The first sacrifice layer 31 of layer and groove 310, two layers of first sacrifice layers 31 stack together, and the second sacrifice layer 32 corresponds to Support
II position.
Wherein, it is close to be less than the distribution of the further groove of the first sacrifice layer of bottom 31 for the distribution density of the further groove of the first sacrifice layer of top layer 31
Degree.Reference picture 1, when MEMS microphone works, vibrating membrane 2 vibrates, and air flows along direction B in gap 3, wherein vibrating membrane 2
Air mass flow, flow velocity are maximum near centre position between conductive plate 1.With reference to reference picture 13, the first sacrifice layer of bottom 31
In groove close to the centre position, therefore, by setting the further groove distribution density of the first sacrifice layer of bottom 31 to be more than top layer
The further groove distribution density of first sacrifice layer 31, so that during MEMS microphone work, it is centrally located between upper and lower pole plate
Air quickly flow out.
In addition to this embodiment scheme, it can also be：One layer of first sacrifice layer is only formed on conductive plate.
In a particular embodiment, the thickness sum H of two layers of first sacrifice layers 311Scope is 0.5 μm~5 μm.If in conduction
When one layer of first sacrifice layer is only formed on pole plate, the thickness range of one layer of first sacrifice layer is also 0.5 μm~5 μm.H1As
Follow-up spacing between vibrating membrane and conductive plate, if H1Less than 0.5 μm, in vibrating membrane vibration processes, vibrating membrane and conductive electrode
Air between plate can not discharge in time, the increase of air drag that vibrating membrane vibration processes suffer, the Q values of MEMS microphone compared with
It is small, the sensitivity decrease of vibrating membrane.If H1More than 5 μm, when vibrating membrane vibrates, spacing becomes between vibrating membrane and conductive plate
Change is very small for spacing, it is difficult to be converted into effective capacitance variation signal, the sensitivity of MEMS microphone is very low.
Reference picture 14, Figure 15, Figure 14 are top view, and Figure 15 is cross-sectional views of the Figure 14 along GG directions, in top layer
Vibrating membrane 12 is formed on first sacrifice layer 31 and the second sacrifice layer 32.
In the present embodiment, the material of vibrating membrane 12 is SiGe, so removes the first sacrifice layer, second sacrificial in subsequent etching
During domestic animal layer, vibrating membrane 12 will not be etched away.In addition, the material of vibrating membrane 12 can also be the Si or Al doped with ion.
Reference picture 16, second electrode 2 is formed on vibrating membrane 12 and in the corresponding electrical connection area III positions shape of conductive plate 11
Into first electrode 1, first electrode 1, second electrode 2 are used for electrically connecting with external circuit；Afterwards, in the electricity of conductive plate 11, first
Passivation layer 13 is formed in pole 1, vibrating membrane 12 and second electrode 2, the passivation layer 13 on conductive plate 11 is higher than vibrating membrane 12, and with
Passivation layer 13 on vibrating membrane 12 remains basically stable, and passivation layer 13 can protect the device on 10 positive S1 of the first wafer.
In a particular embodiment, the material of passivation layer 13 is SiO2Or other viable materials.
Reference picture 17, there is provided the second wafer 20, the second wafer 20 have positive S1' and back side S2', and the second wafer 20 is rear
Played a supporting role in continuous technique；
Overturn the first wafer 10 so that the back side S2 of the first wafer 10 upward, then by the wafer 20 of passivation layer 13 and second
Positive S1' bondings, the technique that bonding technology is well known to those skilled in the art, will not be repeated here；
Back of the body chamber 14 is formed in the back side S2 of the first wafer 10, the corresponding vibrating area I of back of the body chamber 14 position, it is brilliant that back of the body chamber 14 runs through first
The positive S1 of circle 10, exposes the first sacrifice layer in the through hole of 3rd sacrifice layer 33 and 3rd sacrifice layer 33.In specific embodiment
In, form back of the body chamber 14 using photoetching, etching technics.
With reference to reference picture 18, etching removes the first sacrifice layer 31 of corresponding vibrating area I positions, 3rd sacrifice layer 33 and correspondingly
The second of Support II positions sacrifices 32, so corresponds to vibrating area I positions, and back of the body chamber 14 exposes conductive plate 11, conductive plate 11
Gap 30 is formed between vibrating membrane 13, groove 310, groove are formed in the corresponding position of second sacrifice layer 32 of the first sacrifice layer 31
310 run through the side wall of the first sacrifice layer 310, with communication gap 30 and external environment condition.Corresponding Support II positions remaining first are sacrificial
Domestic animal layer 31 is used for supporting vibrating membrane 12, and remaining 3rd sacrifice layer 33 is used for supporting conductive plate 11 and thereon structure.
Specifically, etch for the first time first, remove the first sacrifice layer 31 of corresponding vibrating area I positions, it is sacrificial to exposing second
Domestic animal layer 32；Then, second of etching, the second sacrifice layer 32 is removed.
In a particular embodiment, etching can be dry etching or wet etching for the first time, and etching gas or etching agent lead to
3rd sacrifice layer 33 is etched after crossing back of the body chamber 14, and continues through the first sacrifice layer of via etch 31 of conductive plate 11.First is sacrificial
Domestic animal layer 31 and the material of 3rd sacrifice layer 33 are Ge, and etching removes the first sacrifice layer 31 and the etching gas of 3rd sacrifice layer 33
Or etching agent can refer to existing process and be selected, and will not be repeated here.
In a particular embodiment, second of etching is wet etching.The material of second sacrifice layer 32 is SiO2, in wet method mistake
The etching agent used in journey is dilute hydrofluoric acid solution, and in the dilute hydrofluoric acid solution, the volume range between each composition is
H2O:HF=100:1~50:1, the temperature range of hydrofluoric acid solution is 22.5 DEG C~23.5 DEG C, etch period scope 5min~
25min, to ensure all to remove the second sacrifice layer 32.
With reference to reference picture 19, the first wafer 10 is overturn, makes the back side S2' of the second wafer 20 upward；
Afterwards, the positive S1' of passivation layer 13 and the second wafer 20 is peeled away；
Finally, passivation layer 13 is removed, etching technics specifically can be used.
In the MEMS microphone of the present embodiment, the first sacrifice layer 31 of corresponding Support III positions is played to vibrating membrane 12
Supporting role, formed with some grooves 310 being spaced apart in the first sacrifice layer 31, the communication gap 30 of groove 310 and outer
Portion's environment.Sound acts on the upper surface of vibrating membrane 12, and vibrating membrane 12 is pressurized and moved towards conductive plate 11, and vibrating membrane 12 moves
During can be in compression clearance 30 air, air is expelled to external environment condition after being pressurized after by groove 310, in addition,
Partial air is also discharged from through hole 110, reduces the damping action that air moves to vibrating membrane 12.So, vibrating membrane is acted on
The acoustic energy overwhelming majority on 12 is even completely converted into the vibration mechanical energies of vibrating membrane 12, the acoustic energy of air consumption compared with
It is small so that the Q values increase of MEMS microphone, the sensitivity of vibrating membrane 12 is higher, and this improves the sensitivity of MEMS microphone,
The performance of MEMS microphone is preferable.
The present invention also provides a kind of MEMS microphone, reference picture 19, and the MEMS microphone of the present embodiment includes：
First wafer 10, the first wafer 10 have positive S1 and back side S2, conductive in positive S1 formed with conductive plate 11
Pole plate 11 includes vibrating area I, Support II, the electrical connection area III outside the II of Support around vibrating area I；
Corresponding vibrating area I position, positioned at the back side S2 of the first wafer 10 back of the body chamber 14, back of the body chamber 14 runs through positive S1, reveals
Go out conductive plate 11；
Corresponding vibrating area I position, some through holes 110 being spaced apart in conductive plate 11；
With reference to reference picture 13, vibrating membrane 12 on conductive plate 11, between conductive plate 11 and vibrating membrane 12
The first sacrifice layer 31,31 corresponding Support II of the first sacrifice layer position is corresponding between vibrating membrane 12 and conductive plate 11 to shake
Dynamic area I position has gap 30, and gap 30 is that vibrating membrane 12 provides oscillation space；
Some grooves 310 in the first sacrifice layer 31, some grooves 310 are along between vibrating area I circumferential direction
Every distribution, groove 310 is used as gap through the two side of the first sacrifice layer 31 with communication gap 30 and external environment condition, groove 310
The passage that air is discharged in the horizontal direction in 30.
In a particular embodiment, the spacing range between vibrating membrane 12 and conductive plate 11 is 0.5 μm~5 μm, and this makes to shake
Dynamic film 12 has preferable sensitivity, and the sensitivity of MEMS microphone is preferable.
In a particular embodiment, the material of vibrating membrane 12 is SiGe, Si or Al, and the material of the first sacrifice layer 31 is Ge.
In a particular embodiment, MEMS microphone also includes：Corresponding Support II positions, positioned at the front of the first wafer 10
3rd sacrifice layer 33 between S1 and conductive plate 11.3rd sacrifice layer 33 plays a part of supporting conductive plate 11, and will lead
Battery lead plate 11 is kept apart with the first wafer 10.
In the present embodiment, the quantity of the first sacrifice layer 31 is two layers, and two layers of first sacrifice layers 31 stack together；Top layer
The distribution density of the further groove 310 of first sacrifice layer 31 is less than the distribution density of the further groove 310 of the first sacrifice layer of bottom 31, to cause
The air of the larger flow velocity in centre position is quickly discharged between conductive plate 11 and vibrating membrane 12.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (14)
- A kind of 1. forming method of MEMS microphone, it is characterised in that including：The first wafer is provided, first wafer has front and back, in the front formed with conductive plate, the conduction Pole plate includes vibrating area and around the Support of the vibrating area；The corresponding vibration zone position, forms some through holes being spaced apart in the conductive plate；The corresponding vibrating area and support zone position, on the conductive plate and form the first sacrifice layer in through hole；The position of the corresponding Support, some grooves are formed in first sacrifice layer, some grooves edges, which are surround, to shake The circumferential direction in dynamic area is spaced apart, and the groove runs through the first sacrifice layer side wall；The second sacrifice layer is formed in the groove, the material of second sacrifice layer is different from the material of the first sacrifice layer；Vibrating membrane is formed on first sacrifice layer and the second sacrifice layer；The corresponding vibration zone position, back of the body chamber being formed in first wafer rear, the back of the body chamber runs through the first wafer frontside, it Afterwards, the first sacrifice layer of corresponding vibration zone position and the second sacrifice layer of corresponding support zone position are removed；Before the conductive plate is formed, 3rd sacrifice layer is formed in first wafer frontside, the conductive plate covering the Three sacrifice layers；When removing first sacrifice layer, the 3rd sacrifice layer of corresponding vibration zone position is also removed.
- 2. forming method as claimed in claim 1, it is characterised in that the spacing range between the vibrating membrane and conductive plate For 0.5 μm~5 μm.
- 3. forming method as claimed in claim 1, it is characterised in that the material of the vibrating membrane is SiGe, Si or Al.
- 4. forming method as claimed in claim 3, it is characterised in that the material of the vibrating membrane is SiGe, and described first is sacrificial The material of domestic animal layer is Ge, and the material of second sacrifice layer is SiO2Or Si3N4。
- 5. forming method as claimed in claim 4, it is characterised in that remove the first sacrifice layer and the of corresponding vibration zone position The method of two sacrifice layers includes：Etch for the first time, remove the first sacrifice layer of corresponding vibration zone position to exposing the second sacrifice layer；Second of etching, removes second sacrifice layer.
- 6. forming method as claimed in claim 5, it is characterised in that the first time etching is carved for dry etching or wet method Erosion.
- 7. forming method as claimed in claim 5, it is characterised in that second etching is wet etching, the quarter used Erosion agent is dilute hydrofluoric acid solution, and in the hydrofluoric acid solution, the volume ratio of each composition is H2O:HF=100:1~50:1, The temperature range of solution is 22.5 DEG C~23.5 DEG C, etch period scope 5min~25min.
- 8. forming method as claimed in claim 1, it is characterised in that form the method bag of back of the body chamber in first wafer rear Include：Passivation layer is formed in first wafer frontside and vibrating membrane, the passivation layer of first wafer frontside is higher than vibration Film；The second wafer is provided, second wafer has front and back；First wafer is overturn, the passivation layer is bonded with the second wafer frontside；Back of the body chamber is formed in first wafer rear；After the second sacrifice layer of the first sacrifice layer of corresponding vibration zone position and corresponding support zone position is removed, by the passivation Layer is peeled off with the second wafer.
- 9. forming method as claimed in claim 1, it is characterised in that the quantity of first sacrifice layer is two layers, two layers the One sacrifice is laminated together；Top layer the first sacrifice layer further groove distribution density is less than bottom the first sacrifice layer further groove distribution density.
- A kind of 10. MEMS microphone, it is characterised in that including：First wafer, first wafer have front and back, in the front formed with conductive plate, the conductive plate Including vibrating area and around the Support of the vibrating area；The position of the corresponding vibrating area, positioned at the back of the body chamber of first wafer rear, the back of the body chamber exposes conductive plate；The corresponding vibration zone position, some through holes being spaced apart in the conductive plate；Vibrating membrane on the conductive plate, the first sacrifice layer between the conductive plate and vibrating membrane, it is described First sacrifice layer corresponds to the position of the Support, and the position tool of the vibrating area is corresponded between the vibrating membrane and conductive plate There is gap；Some grooves in first sacrifice layer, some grooves are along around the circumferential direction interval of vibrating area point Cloth, the groove run through the two side of the first sacrifice layer；Also include：The corresponding support zone position, the between the front of first wafer and conductive plate the 3rd sacrifices Layer.
- 11. MEMS microphone as claimed in claim 10, it is characterised in that the spacing between the vibrating membrane and conductive plate Scope is 0.5 μm~5 μm.
- 12. MEMS microphone as claimed in claim 10, it is characterised in that the material of the vibrating membrane be SiGe, Si or Al。
- 13. MEMS microphone as claimed in claim 12, it is characterised in that the material of the vibrating membrane is SiGe, described The material of one sacrifice layer is Ge.
- 14. MEMS microphone as claimed in claim 10, it is characterised in that the quantity of first sacrifice layer be two layers, two Layer first, which is sacrificed, to be laminated together；Top layer the first sacrifice layer further groove distribution density is less than bottom the first sacrifice layer further groove distribution density.
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| CN112866886A (en) * | 2021-04-23 | 2021-05-28 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone structure and manufacturing method thereof |
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| CN108341395B (en) * | 2017-01-23 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of MEMS device |
| CN106937230A (en) * | 2017-03-30 | 2017-07-07 | 歌尔股份有限公司 | Electret Condencer Microphone and preparation method thereof |
| KR102322258B1 (en) * | 2017-05-19 | 2021-11-04 | 현대자동차 주식회사 | Microphone and manufacturing method thereof |
| CN111924794A (en) * | 2019-05-13 | 2020-11-13 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
| CN111825053B (en) * | 2020-07-03 | 2023-11-10 | 瑞声科技（南京）有限公司 | Capacitive system and preparation method thereof |
| US20220259037A1 (en) * | 2021-02-12 | 2022-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Arched Membrane Structure for MEMS Device |
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