US10181847B2 - Ring amplitude measurement and mitigation - Google Patents

Ring amplitude measurement and mitigation Download PDF

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US10181847B2
US10181847B2 US15/636,365 US201715636365A US10181847B2 US 10181847 B2 US10181847 B2 US 10181847B2 US 201715636365 A US201715636365 A US 201715636365A US 10181847 B2 US10181847 B2 US 10181847B2
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voltage
ring
switch
node
circuit
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US20180219547A1 (en
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Rajdeep Bondade
Nathan Schemm
Rajarshi Mukhopadhyay
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Texas Instruments Inc
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Texas Instruments Inc
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Assigned to TEXAS INSTRUMENTS INCORPORATED reassignment TEXAS INSTRUMENTS INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MUKHOPADHYAY, RAJARSHI, BONDADE, Rajdeep, SCHEMM, NATHAN
Priority to CN201810094296.6A priority patent/CN108377095B/zh
Publication of US20180219547A1 publication Critical patent/US20180219547A1/en
Priority to US16/247,146 priority patent/US10651841B2/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H03K5/1532—Peak detectors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Definitions

  • High frequency switches because of their fast switching speed, their compatibility for parallel operation and their ability to deal with high voltages—are widely used in power electronic applications, such as in motor drivers.
  • Using high frequency switches is advantageous as they permit higher system frequencies and power densities.
  • high frequency switching has its negative effects.
  • fast-switching (or high-frequency-switched) field effect transistors (FETs) can experience significant voltage overshoots and ringing on at least one of the terminals (e.g., drain) of the FET.
  • the high frequency switching and high amplitude voltage ringing produces electromagnetic interference which can impact system reliability, increase the system voltage stress and decrease the overall service life.
  • a closed-loop ring amplitude adjustment circuit includes a voltage divider circuit which further comprises a plurality of series-connected capacitors.
  • an input terminal of one of the capacitors is configured to receive a first voltage from a switch, and a ring node comprising the connection between at least two of the series-connected capacitors.
  • the closed-loop ring amplitude adjustment circuit further comprises a negative clamp circuit coupled to the ring node of the voltage divider circuit and a bias voltage node.
  • the bias voltage node is configured to receive a bias voltage and responsive to a ring voltage on the ring node being less than the bias voltage, the negative clamp circuit is configured to clamp the ring voltage at a first threshold voltage.
  • the closed-loop ring amplitude adjustment circuit further includes a peak detector circuit coupled to the ring node of the voltage divider circuit and is configured to detect a peak amplitude of the ring voltage.
  • the closed-loop ring amplitude adjustment circuit further includes a switch driver coupled to the peak detector circuit and in some embodiments, is configured to adjust a control signal to the switch responsive to the detected peak amplitude.
  • a ring amplitude adjustment circuit in another embodiment, includes a voltage divider circuit including a plurality of series-connected impedances.
  • the series-connected impedance includes an input terminal of one of the impedances configured to receive a first voltage from a switch and a ring node including the connection between at least two of the series-connected impedances.
  • the ring amplitude adjustment circuit further includes a negative clamp circuit coupled to the ring node of the voltage divider circuit and a bias voltage node. In some embodiments, the negative clamp circuit is configured to clamp a ring voltage of the ring node at a first threshold voltage.
  • the ring amplitude adjustment circuit also includes a peak detector circuit coupled to the ring node of the voltage divider circuit and is configured to detect a peak amplitude of the ring voltage.
  • the ring amplitude adjustment circuit further includes a comparator configured to compare the detected peak amplitude to a reference voltage and to generate a comparator output signal and in some embodiment, the ring amplitude adjustment circuit includes a digital controller coupled to the comparator and, responsive to the comparator output signal, configured to cause a control signal to the switch to be adjusted.
  • a method in another embodiment, includes receiving, by a voltage divider circuit, a first voltage from a switch. The method can also include, in an embodiment, clamping a ring voltage derived from the first voltage at a first threshold voltage responsive to the ring voltage being less than a bias voltage. Further, the method can include detecting a peak amplitude of the ring voltage and adjusting a control signal to the switch in response to the detected peak amplitude.
  • FIG. 1 shows an example circuit system configured to employ a ring amplitude sensor for each switch present in the circuit system, in accordance with various examples.
  • FIG. 2 shows a detailed diagram of an illustrative low-side closed loop ring amplitude adjustment circuit system of FIG. 1 , in accordance with various examples.
  • FIG. 3 shows a detailed diagram of an illustrative negative clamp circuit of FIG. 2 , in accordance with various examples.
  • FIG. 4 shows a detailed diagram of an illustrative positive clamp circuit of FIG. 2 , in accordance with various examples.
  • FIG. 5 shows a detailed diagram of an illustrative switch driver of FIG. 2 , in accordance with various examples.
  • FIG. 6 shows a detailed diagram of illustrative hysteretic comparators, in accordance with various examples.
  • FIG. 7 shows an example flow diagram of adjusting a control signal by the digital controller, in accordance with various examples.
  • FIG. 8 shows an illustrative flow diagram illustrating aspects of operations that can be performed to reduce peak AC amplitude during ringing, in accordance with various examples.
  • the magnitude of a ringing signal is tied to the switching speed of a switch, and also on the amount of stray inductance and/or capacitance in a system.
  • a power converter with a half-bridge topology including a high-side switch and a low-side switch can be employed.
  • the half-bridge topology system can have unwanted parasitic elements (e.g., inductance, capacitance) which stores energy during on/off or off/on transition of each of the high-side and the low-side switch. This stored energy is commonly referred to as “di/dt” noise and the di/dt noise subsequently needs to be dissipated.
  • the di/dt noise dissipates as ringing at the switch transitioning from on/off or off/on state.
  • At least some of the embodiments disclosed herein are directed to a ring amplitude sensor circuit which is configured to measure a peak AC amplitude of a ringing voltage and, in response to the measured peak AC amplitude, the ring amplitude sensor is configured to adjust a control signal driving a switch. Because the magnitude of the control signal impacts switching speed, and further because switching speed impacts switching loss, EMI noise and ringing, adjusting the control signal can adjust the switching speed of the switch, which, in turn, adjusts (e.g., reduce) the magnitude of the ringing. In some embodiments, as described further below, the magnitude of the ringing can also be adjusted by altering a start time of a ringing mitigation phase when the switch transitions between on/off states.
  • the example circuit system shown in FIG. 1 is a half-bridge configuration of a converter 30 usable to drive a high powered load connected to a line 70 .
  • the converter 30 adjusts (e.g., reduces or increases) ringing, as described further below, occurring during on/off transition of both high-side switch 85 and low-side switch 140 .
  • the example embodiment is directed towards a converter driving a load, but the principles can be applied to other types of converters including transistors and driving any type of load.
  • the converter 30 disclosed in the FIG. 1 can further include a high-side closed loop ring amplitude adjustment circuit 80 , which further includes a high-side ring amplitude sensor 50 driving the high-side switch 85 .
  • the converter 30 can also include a low-side closed loop ring amplitude adjustment circuit 100 further including a low-side ring amplitude sensor 40 driving the low-side switch 140 .
  • the switches (low-side and high-side) employed are metal oxide semiconductor field effect transistors (MOSFETS), and the control input is their gate.
  • MOSFETS metal oxide semiconductor field effect transistors
  • the switch 85 comprises a drain 87 , a source 88 and a gate 86 .
  • the transistors can be bipolar transistors, in which case the control input can be a base.
  • the switches comprise silicon carbide (SiC) transistors and in other examples, a switch is a device that has properties similar to the properties of a transistor or any other semiconductor switching device.
  • the example converter shown in FIG. 1 employs a separate ring amplitude adjustment circuit to adjust the corresponding control signal of each switch present in the circuit system.
  • the low-side closed loop ring amplitude adjustment circuit 100 employs the low-side ring amplitude sensor 40 which receives feedback from the low-side switch 140 and asserts a control signal to the low-side switch 140 based on the received feedback.
  • the high-side closed loop ring amplitude adjustment circuit 80 employs the high-side ring amplitude sensor 50 to receive feedback from the high-side switch 85 and asserts a control signal to the switch 85 based on the received feedback.
  • Both the high-side ring amplitude sensor 50 and the low-side ring amplitude sensor 40 receive drain and source voltage levels as a feedback from the high side switch 85 and the low-side switch 140 respectively.
  • the high-side switch 85 is connected to a bus voltage (e.g., 1000 V) and the low-side switch connects to the ground.
  • the drain 142 to source 143 voltage of the low-side switch 140 falls from the bus voltage of 1000 V to ground, causing ringing at the low-side switch 140 and the drain and source voltage levels are sent as a feedback from low-side switch 140 to the low-side ring amplitude sensor 40 to adjust (e.g., reduce) the ringing.
  • FIG. 2 further shows an example of a closed-loop ring amplitude adjustment circuit 100 configured to mitigate ringing which occurs in certain circuit configurations.
  • a closed-loop ring amplitude adjustment circuit 100 configured to mitigate ringing which occurs in certain circuit configurations.
  • the example of FIG. 2 further shows a negative clamp circuit 120 with one terminal connected to the ring node 101 and the other terminal connected to a bias node 102 .
  • the bias node 102 receives a bias voltage (V bias ) 105 .
  • the ring voltage at ring node follows the input voltage received at the terminal 108 and the negative clamp circuit 120 restricts the ring voltage at the ring node 101 from dropping below the first threshold.
  • FIG. 2 shows a voltage divider circuit 90 utilized, as further described below, to divide down and capture AC information of the input voltage (received at the input terminal 108 ) during ringing.
  • the voltage divider circuit 90 includes a first capacitor 110 connected to a second capacitor 115 in series.
  • the voltage divider circuit 90 comprises a plurality of resistors connected in series. Ring node 101 is the node between the capacitors 110 and 115 .
  • the voltage divider circuit 90 receives an input voltage at an input terminal 108 .
  • the input voltage comprises, in this example, the drain voltage of the low-side switch 140 .
  • the negative clamp circuit 120 clamps the ring voltage at the ring node 101 at the first threshold.
  • the clamping at the ring node 101 lasts until the input voltage received at the terminal 108 increases beyond the first threshold voltage.
  • di/dt noise is accumulated which can be dissipated as ringing and is detected at the ring node 101 as a high oscillation damping signal (ringing).
  • the voltage divider circuit 90 is configured to divide the high oscillation damping signal (ringing).
  • the voltage divider can be configured to divide down just the high oscillation damping signal, thereby improving the overall resolution of the low-side ring amplitude sensor 40 .
  • the voltage divider circuit 90 divides down a peak AC amplitude during ringing, for example, 50V to a voltage of 2.5V, which is a sizable fraction of the actual ringing (50V) occurring at the drain terminal of the low-side switch 140 .
  • a negative clamp circuit 120 is utilized to clamp the negative dV/dt transition voltage at a first threshold voltage which allows the low-side ring amplitude sensor 40 to employ a voltage divider circuit 90 which don't require dividing down the input voltage received at the node 108 to very low value of e.g., 5V resulting in a substantially low peak AC amplitude during ringing. Therefore, using the negative clamp circuit 120 improves the overall resolution of the amplitude sensor.
  • the second capacitance 115 can be configurable to produce desired peak AC amplitude of ringing. For example, if a user wants to have peak AC ring amplitude of 20V, or 50V or 100V, the user can change the second capacitance accordingly, without having to modify and/or add any additional circuitry.
  • FIG. 2 further shows a positive clamp circuit 125 with one terminal connected to the ring node 101 and another terminal connected to ground.
  • the voltage transition occurs from a very high low voltage (e.g., 0 V) to a high voltage (1000 V) and this transition occurs with time, such that the slope of voltage and time curve is positive (positive dV/dt transition).
  • the positive clamp circuit 125 as described further below, can be enabled to clamp the ringing voltage received at the ring node 101 at a second threshold voltage.
  • FIG. 2 further includes a peak detector 130 coupled to the ring node 101 .
  • Ringing occurs as energy stored in parasitic inductances dissipates, causing the ring voltage at the drain of low-side switch 140 and thus at ring node 101 to produce a damping high oscillation signal.
  • the peak detector 130 outputs a DC voltage capturing peak AC amplitude during this damping high oscillation period.
  • the peak detector 130 further couples to a switch driver 135 through a connection wire 131 and the switch driver 135 is configured to adjust a control signal asserted to the gate 141 of low-side switch 140 .
  • Adjusting the control signal causes the switching speed of the low-side switch 140 to be adjusted to thereby further adjust (e.g., reduce) the peak AC amplitude detected by the peak detector 130 .
  • adjusting the timing of gate drive strength of the low-side switch 140 adjusts the peak AC amplitude detected by the peak detector 130 .
  • FIG. 3 shows a detailed example of the negative clamp circuit 120 .
  • the negative clamp circuit 120 restricts the voltage at the ring node 101 from dropping below the first threshold voltage.
  • the illustrative negative clamp circuit 120 of FIG. 2 includes switches M 1 and M 2 .
  • Switch M 1 can be an n-type MOSFET with a threshold voltage (V TH ) M1.
  • the switch M 2 includes a first p-type MOSFET 215 and a second p-type MOSFET 220 , with a drain terminal 217 of the MOSFET 215 coupled to a source terminal 221 of MOSFET 220 .
  • a gate terminal 218 of MOSFET 215 can be connected to a drain terminal 201 of the switch M 1 .
  • a gate terminal 203 of the switch M 1 and the gate terminal 223 of MOSFET 220 are coupled together and to the bias node 102 .
  • a source terminal 202 of the switch M 1 connects to a drain terminal 222 of MOSFET 220 at the ring node 101 .
  • the drain terminal 201 of the switch M 1 connects through resistor 204 to an external DC voltage 225 to source extra current during clamping.
  • a source terminal 216 of MOSFET 215 is also connected to the external DC voltage 225 to source extra current.
  • the current flow between the external DC voltage 225 and the ring node 101 causes a potential drop across a resistor 204 , which in turn causes the switch M 2 to also turn ON and form additional current path to assist in clamping the voltage at the ring node 101 .
  • the clamping at the ring node 101 will last until the input voltage received at the terminal 108 ( FIG. 2 ) increases beyond the first threshold voltage.
  • the input voltage received at the terminal 108 stops dropping and begins to increase. Due to capacitive coupling, the increase in the input voltage received at the terminal 108 increases the voltage on the ring node 101 .
  • the switch M 1 automatically turns OFF as a voltage between the gate terminal 203 and source terminal 202 goes below the threshold value. In an embodiment, this turns OFF the negative clamp circuit 120 while the peak detector 130 captures peak AC amplitude of the ring voltage present at the ring node 101 .
  • FIG. 4 shows a detailed diagram of an example positive clamp circuit 125 .
  • the positive clamp circuit 125 can clamp ringing voltage received at the ring node 101 at a second threshold voltage.
  • the positive clamp circuit 125 can further include a switch M 3 , such as a p-type MOSFET with a threshold voltage (V TH ) M3 .
  • the positive clamp circuit 125 can further include an additional switch M 4 .
  • the switch M 4 composes of a first n-type MOSFET 315 and a second n-type MOSFET 320 , with a source terminal 317 of the MOSFET 315 coupled to a drain terminal 321 of the MOSFET 320 .
  • a source terminal 301 of the switch M 3 is connected to the ring node 101 and a drain terminal 316 of the switch 315 .
  • a gate terminal 303 of the switch M 3 is connected to a positive terminal of a DC voltage source 325 and a negative terminal of the DC voltage source 325 is further connected to a source terminal of the switch 320 .
  • a drain terminal 302 of the switch M 3 is connected to the gate terminal 323 of the switch 320 and is further connected to the source terminal 322 through a resistor 304 .
  • the negative terminal of the DC voltage source 325 , the resistor 304 coupled to the drain terminal 302 and the source terminal 322 further couples to a ground.
  • Source terminal 317 of the switch 315 connects to the drain terminal of the switch 320 and the gate terminal 318 of the switch 315 is connected to the gate terminal 303 of the switch M 3 .
  • the positive clamp circuit 125 turns on during the positive dV/dt transition, i.e., when the voltage between the gate terminal 303 and the source terminal 301 goes above the threshold voltage (V TH ) M3 . This results in forming a first current sinking path from the ring node 101 to the ground, maintaining the voltage at the ring node 101 at a second threshold.
  • the first current sinking path further causes a potential drop at the resistor 304 which can turn on the switch M 4 , further forming a second current sinking path from the ring node 101 to the ground.
  • FIG. 5 shows a detailed diagram of an illustrative switch driver 135 of FIG. 2 .
  • the switch driver 135 comprises an amplifier 205 , a hysteretic comparators 210 coupled to the amplifier 205 , and a digital controller 220 coupled to the hysteretic comparators 210 .
  • the switch driver 135 further comprises a pull-up level shifter-driver 225 driving high-side segmented switches 235 and a pull-down level shifter-driver 230 driving low-side segmented switches 240 .
  • the pull-up level shifter-driver 225 and the pull-down level shifter-driver 230 are coupled to the digital controller 220 .
  • the amplifier 205 receives the peak AC amplitude of the ring voltage as captured by the peak detector 130 .
  • the amplifier 205 can be a differential input-differential output sample and hold amplifier which can amplify the peak amplitude of the ring voltage with reference to a reference voltage.
  • the amplifier 205 receives two inputs via connections 131 , 132 and provides outputs through two connections 206 , 207 .
  • Connection 131 receives the peak amplitude of the ring voltage captured by the peak detector 130 and the connection 132 receives a reference voltage such as, the bias voltage received at the bias node 102 .
  • a first output voltage and a second output voltage, proportional to the peak AC amplitude detected by the peak detector 130 are generated at connection 206 and connection 207 , respectively.
  • the output signals from the connections 206 , 207 of the amplifier 205 are provided to the hysteretic comparator 210 .
  • the hysteretic comparator 210 is configured to generate two output bits, herein referred as HB and LB to indicate whether the captured peak ring amplitude is high or low (e.g., positive or negative).
  • the digital controller 220 determines the adjustment to be made to the control signal.
  • the digital controller 220 further, adjusts the control signal by activating a specific number of high-side segmented switches 235 and low-side segmented switches 240 .
  • the digital controller 220 adjusts (e.g., reduce) the amount of control signal received by the low-side switch 140 .
  • the amount of the control signal can be adjusted by reducing the number of high-side segmented switches 235 turned on to charge the gate terminal 141 of the low-side switch 140 .
  • reducing the number of high-side segmented switches 235 that are turned on results in the low-side switch 140 turning on more slowly.
  • the turn on time of the low-side switch 140 can be divided into three phases—negative dV/dt transition time T 1 as phase 1 , ring mitigation time T 2 as phase 2 and complete turn on time T 3 as phase 3 .
  • the time T 1 can be defined as the time taken by the low-side switch 140 during negative dV/dt transition.
  • the time T 2 can be the time during which high oscillation signal (ringing) is damped and the time T 3 can be time when the low-side switch 140 is driven to be completely turned on.
  • the digital controller 220 can further adjust the control signal by activating a specific number of high-side segmented switches 235 , so as to adjust the start of time T 2 , of phase 2 —resulting in an adjusted (e.g., reduced) peak AC ring amplitude.
  • the low-side switch 140 takes 20 ns to complete the negative dV/dt phase (transition time T 1 ), from time 0 , while the ringing mitigation phase lasts for 30 ns, leading to 50V in peak AC ring amplitude, as a consequence of the system parasitic.
  • the digital controller 220 can be configured to start phase 2 even before the negative dV/dt phase has completed, thereby effectively reducing the time T 1 , while keeping T 2 constant. This consequently results in smaller peak AC ring amplitude.
  • FIG. 6 shows a detailed diagram of the hysteretic comparator 210 , in accordance with various embodiments.
  • the hysteretic comparator 210 includes a reference generator 530 , a high side comparator 500 generating the “HB” bit and a low side comparator 510 generating the “LB” bit.
  • the high side comparator 500 generates HB by comparing input voltages with reference values. For example, the high side comparator 500 can subtract a first amplifier output received through the terminal 206 to a positive reference voltage to form a first input and subtract a second amplifier output received through the terminal 207 to a negative high side reference value to form a second input.
  • the high side comparator further compares the added value of the first input and the second input with a present reference value (e.g., 0). If the added value is positive, i.e., above 0, the HB will be 1, referring a “too high” peak AC amplitude.
  • a present reference value e.g. 0
  • the low side comparator 510 generates the LB by comparing input voltages with reference values. For example, the low side comparator 500 subtracts a first amplifier output received through the terminal 206 to a positive reference voltage and subtracts a second amplifier output received through the terminal 207 to a negative low side reference value to produce a first and a second input. Further, the low side comparator further adds the first and the second input and compare the added value with the present reference value (e.g., 0). If the added value is negative, i.e., below 0, the LB will be 1, referring a “too low” peak AC amplitude.
  • the present reference value e.g., 0
  • FIG. 7 is an example flow diagram of adjusting a control signal by the digital controller 220 in response to HB and LB generated by the hysteretic comparator 210 .
  • the flow diagram starts with a block 610 by checking if both HB and LB are low, i.e., 0. For example, the digital controller 220 receives the HB and LB. If the received bits are low, the flow diagram proceeds to a block 620 and maintains the control signal driving the low-side switch 140 . However, if either of the HB or LB is high (i.e., 1), then control flows to 630 and a determination is made by the digital controller 220 as to whether the HB is high and LB is low.
  • the digital controller 220 reduces the control signal (e.g., by reducing the number of activated high side segmented switches 235 ). Otherwise, the HB is low and the LB is high and the digital controller responds at 650 by increasing the control signal (e.g., by increasing the number of activated high side segmented switches 235 ).
  • FIG. 8 shows a flow diagram illustrating aspects of operations that can be performed to reduce peak AC amplitude during ringing. Though depicted sequentially as a matter of convenience, at least some of the actions shown can be performed in a different order and/or performed in parallel. Additionally, some embodiments can perform only some of the actions shown. In some embodiments, at least some of the operations of the method 700 can be performed by the closed-loop ring amplitude sensor system described in the FIG. 2 and therefore the operations described in method 700 are now described with reference to FIG. 2 .
  • the method 700 starts in block 710 with receiving a first voltage from a switch.
  • voltage divider circuit 90 receives an input voltage (drain to source voltage of the low-side switch 140 ) from the low-side switch 140 .
  • the method 700 continues in block 720 with clamping a ring voltage at a first threshold. Due to capacitive coupling, the ring voltage follows the input voltage received at the input terminal 108 and in a case when the ring voltage falls below a first threshold value, the negative clamp circuit 120 clamps the ring voltage at the first threshold value.
  • the method 700 continues at block 730 with detecting a peak AC amplitude of the ringing voltage.
  • ringing occurs as energy stored in parasitic inductances dissipates, thereby causing the ring voltage at the ring node 101 to generate a damping high oscillation signal and these oscillations can have a peak AC amplitude and the block 730 detects the peak AC amplitude.
  • the method 700 further continues at block 740 with adjusting a control signal to the low-side switch 140 .
  • the switch driver 135 adjusts a control signal asserted to the low-side switch 140 . Adjusting the control signal adjusts switching speed of the low-side switch 140 and, in consequence of that, can further adjust the peak AC amplitude detected by the peak detector 130 .

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  • Electromagnetism (AREA)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190149150A1 (en) * 2017-02-01 2019-05-16 Texas Instruments Incorporated Ring amplitude measurement and mitigation
US11043477B2 (en) * 2016-02-09 2021-06-22 Texas Instruments Incorporated Power converter monolithically integrating transistors, carrier, and components

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110994997A (zh) * 2018-10-02 2020-04-10 富士电机株式会社 开关电源装置的控制装置
CN109842279B (zh) * 2019-02-22 2021-07-02 湖南大学 一种SiC MOSFET开环主动驱动电路
TWI707528B (zh) * 2019-06-17 2020-10-11 瑞昱半導體股份有限公司 開關控制電路
JP2021069183A (ja) * 2019-10-23 2021-04-30 株式会社東芝 リンギング検出回路及び電力変換器
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Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857931A (en) 1987-07-20 1989-08-15 Zdzislaw Gulczynski Dual flash analog-to-digital converter
US20010035743A1 (en) 1998-07-03 2001-11-01 Martin Feldtkeller Circuit configuration for controlling a switching device for switching an electrical consumer and method for limiting a time deviation of a switching current of a consumer
US6429638B1 (en) 2000-08-31 2002-08-06 Nortel Networks Limited N-diode peak detector
US6972611B1 (en) 2000-07-13 2005-12-06 Ct Concept Technologie Ag Method and device for a state-dependent control of the transient behavior of semiconductor power switches
US20080106297A1 (en) 2006-11-03 2008-05-08 Mediatek Inc. Slew rate controlled circuits
US20090040796A1 (en) 2007-04-27 2009-02-12 Cambridge Semiconductor Limited Bipolar transistor drivers
US20100079186A1 (en) 2008-09-29 2010-04-01 Markus Zannoth Adaptive Drive Signal Adjustment for Bridge EMI Control
US20110031949A1 (en) 2008-04-16 2011-02-10 Nxp B.V. Self-oscillating switched mode converter with valley detection
US20130049735A1 (en) * 2011-08-24 2013-02-28 Thomas Ogle Shafer Radio frequency power amplifier protection system
US20130315294A1 (en) 2011-03-31 2013-11-28 Renesas Electronics Corporation Serial communication apparatus
US20150061750A1 (en) 2013-08-31 2015-03-05 Freescale Semiconductor, Inc Method and Circuit for Controlling Turnoff of a Semiconductor Switching Element
US20160285366A1 (en) 2015-03-24 2016-09-29 Richtek Technology Corporation Current regulator circuit capable of reducing current ripple and method of reducing current ripple
US20170012618A1 (en) 2015-07-10 2017-01-12 Texas Instruments Incorporated Adaptive slew rate control for switching power devices
US20170040894A1 (en) 2015-08-03 2017-02-09 Alex C. H. MeVay Low loss current sensor and power converter using the same
US20170366083A1 (en) * 2016-06-16 2017-12-21 Infineon Technologies Ag Circuit and method for operating the circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4936315B2 (ja) * 2005-11-08 2012-05-23 ルネサスエレクトロニクス株式会社 スイッチング電源装置と半導体集積回路装置
US8787044B2 (en) * 2009-05-07 2014-07-22 Flextronics Ap, Llc Energy recovery snubber circuit for power converters
US8077484B2 (en) * 2010-04-29 2011-12-13 Power Integrations, Inc. Apparatus and method for detecting a change in output voltage of an isolated power converter
US9564820B2 (en) * 2013-03-15 2017-02-07 Linear Technology Corporation Methods and systems for control of DC-DC converters
US10594315B2 (en) * 2017-02-01 2020-03-17 Texas Instruments Incorporated Switching rate monitoring and control
US10181847B2 (en) * 2017-02-01 2019-01-15 Texas Instruments Incorporated Ring amplitude measurement and mitigation

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857931A (en) 1987-07-20 1989-08-15 Zdzislaw Gulczynski Dual flash analog-to-digital converter
US20010035743A1 (en) 1998-07-03 2001-11-01 Martin Feldtkeller Circuit configuration for controlling a switching device for switching an electrical consumer and method for limiting a time deviation of a switching current of a consumer
US6972611B1 (en) 2000-07-13 2005-12-06 Ct Concept Technologie Ag Method and device for a state-dependent control of the transient behavior of semiconductor power switches
US6429638B1 (en) 2000-08-31 2002-08-06 Nortel Networks Limited N-diode peak detector
US20080106297A1 (en) 2006-11-03 2008-05-08 Mediatek Inc. Slew rate controlled circuits
US20090040796A1 (en) 2007-04-27 2009-02-12 Cambridge Semiconductor Limited Bipolar transistor drivers
US20110031949A1 (en) 2008-04-16 2011-02-10 Nxp B.V. Self-oscillating switched mode converter with valley detection
US20100079186A1 (en) 2008-09-29 2010-04-01 Markus Zannoth Adaptive Drive Signal Adjustment for Bridge EMI Control
US20130315294A1 (en) 2011-03-31 2013-11-28 Renesas Electronics Corporation Serial communication apparatus
US20130049735A1 (en) * 2011-08-24 2013-02-28 Thomas Ogle Shafer Radio frequency power amplifier protection system
US20150061750A1 (en) 2013-08-31 2015-03-05 Freescale Semiconductor, Inc Method and Circuit for Controlling Turnoff of a Semiconductor Switching Element
US20160285366A1 (en) 2015-03-24 2016-09-29 Richtek Technology Corporation Current regulator circuit capable of reducing current ripple and method of reducing current ripple
US20170012618A1 (en) 2015-07-10 2017-01-12 Texas Instruments Incorporated Adaptive slew rate control for switching power devices
US20170040894A1 (en) 2015-08-03 2017-02-09 Alex C. H. MeVay Low loss current sensor and power converter using the same
US20170366083A1 (en) * 2016-06-16 2017-12-21 Infineon Technologies Ag Circuit and method for operating the circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11043477B2 (en) * 2016-02-09 2021-06-22 Texas Instruments Incorporated Power converter monolithically integrating transistors, carrier, and components
US20190149150A1 (en) * 2017-02-01 2019-05-16 Texas Instruments Incorporated Ring amplitude measurement and mitigation
US10651841B2 (en) * 2017-02-01 2020-05-12 Texas Instruments Incorporated Ring amplitude measurement and mitigation

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US10651841B2 (en) 2020-05-12

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