US10128832B2 - Converter system, driving circuit and method for semiconductor switch - Google Patents

Converter system, driving circuit and method for semiconductor switch Download PDF

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Publication number
US10128832B2
US10128832B2 US14/856,869 US201514856869A US10128832B2 US 10128832 B2 US10128832 B2 US 10128832B2 US 201514856869 A US201514856869 A US 201514856869A US 10128832 B2 US10128832 B2 US 10128832B2
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turn
driving
semiconductor switch
driving unit
signal
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US20160226479A1 (en
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Lizhi Xu
Weiyi Feng
Weiqiang Zhang
Hongyang Wu
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Delta Electronics Inc
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Delta Electronics Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters

Definitions

  • the present disclosure relates to a driving circuit and a driving method for driving a semiconductor switch.
  • Insulated Gate Bipolar Transistor IGBT
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • SiC MOSFET SiC MOSFET
  • the losses of the semiconductor switches include switching losses and conduction losses.
  • the switching losses are related to the characters of driving circuits for the semiconductor switches and the switching frequency of the semiconductor switches. Therefore, different driving circuits using the semiconductor switches may cause different switching losses of the semiconductor switches.
  • the driving circuit includes a first resistor R 1 , a first switching device Q 1 , a second switching device Q 3 and a driving resistor R d .
  • the first resistor R 1 After receiving a driving control signal DS, the first resistor R 1 transmits the driving control signal DS to a totem-pole amplifier composed of the first switching device Q 1 and the second switching device Q 3 .
  • the amplified signal output from the totem-pole amplifier turns on or off the IGBT S by passing through the driving resistor R d .
  • FIGS. 2A and 2B show a relationship between the resistance of the driving resistor R d and the turn-off loss Eoff of the IGBT S and a relationship between the resistance of the driving resistor R d and the turn-on loss Eon of the IGBT S, respectively. It may be seen from the FIGS. 2A and 2B that with the decrease of the resistance of the driving resistor R d , the switching speed is increased, and the turn-off loss Eoff and the turn-on loss Eon fall down accordingly. Therefore, smaller resistance of the driving resistor R d may decrease the switching loss of the IGBT.
  • FIG. 3 shows a half-bridge circuit comprising IGBTs.
  • An inverter system is formed by an LC filter, a first capacitor C 1 and a second capacitor C 2 , which converts DC voltages across the first capacitor C 1 and the second capacitor C 2 connected in series at the DC side into an alternating current (AC) output voltage Vout.
  • Ls 1 and Ls 2 in the figure are parasitic inductors in the main loop.
  • V S1 V C1 +V C2 +(Ls 1 +Ls 2 ) ⁇ di/dt.
  • a relationship between the voltage stress V S1 and the resistance of the driving resistor R d is shown in FIG. 4 . It can be seen from FIG. 4 that the smaller the resistance of the driving resistor R d or the larger the current is, the larger the switching speed (didt) will be, thereby causing a larger voltage stress.
  • the minimum resistance of the driving resistor R d may be 10 ⁇ .
  • the Eoff and Eon when the resistance of the driving resistor R d is 10 ⁇ are much larger than the Eoff and Eon when the resistance of the driving resistor R d is 2.5 ⁇ , and thus the IGBT has a larger switching loss.
  • FIG. 5 A prior scheme of a driving circuit is shown in FIG. 5 .
  • This circuit can make a driving resistor R d as a turn-on resistor R d1 for turning on the IGBT and a driving resistor R d as a turn-off resistor R d2 for turning off the IGBT.
  • the driving circuit may obtain smaller turn-on resistance (R d1 /R s2 ) with the larger turn-off resistance.
  • the turn-off loss of the IGBT still cannot be decreased. Therefore, the system still has a higher switching loss.
  • the present disclosure provides a driving circuit for a semiconductor switch, a driving method for a semiconductor switch and a converter system using the driving circuit for a semiconductor switch, so as to overcome, to some extent, one or more problems caused by the limitations and defects in related arts.
  • a driving circuit for a semiconductor switch including:
  • a driving unit comprising a plurality of turn-off driving units with different turn-off parameters and a turn-on driving unit;
  • sampling unit configured to sample a sampling current reflecting a working state of the semiconductor switch
  • a selection unit receiving a driving control signal, the sampling current and one or more reference values, determining the working state of the semiconductor switch according to the sampling current and the reference values when the driving control signal is a first control signal, and selecting a turn-off driving unit with a turn-off parameter adaptive to the working state to turn off the semiconductor switch; and selecting the turn-on driving unit to turn on the semiconductor switch when the driving control signal is a second control signal.
  • a driving method for driving a semiconductor switch employs a driving circuit including a plurality of turn-off driving units with different turn-off parameters and a turn-on driving unit.
  • the method includes the following steps of:
  • a plurality of turn-off driving units having different turn-off parameters are provided and the working state of the semiconductor switch is acquired, so that a turn-off driving unit having a turn-off parameter adaptive to the working state of the semiconductor switch is selected according to the working state of the semiconductor switch so as to turn off the semiconductor switch.
  • a turn-off driving unit having a turn-off parameter adaptive to the working state of the semiconductor switch is selected according to the working state of the semiconductor switch so as to turn off the semiconductor switch.
  • FIG. 1 is block diagram showing a structure of an IGBT driving circuit in related arts
  • FIG. 2A is a graph showing a relationship between the driving resistance and a turn-off loss of the IGBT driving circuit in FIG. 1 ;
  • FIG. 2B is a graph showing a relationship between the driving resistance and a turn-on loss of the IGBT driving circuit in FIG. 1 ;
  • FIG. 3 is a block diagram showing a structure of a half-bridge circuit employing IGBTs in related arts
  • FIG. 4 is a graph showing relationships among the voltage stress and the driving resistance and a turn-off current of the IGBT in FIG. 3 ;
  • FIG. 5 is a block diagram showing a structure of another IGBT driving circuit in related arts
  • FIG. 6 is a block diagram showing a converter system in one embodiment of the present disclosure.
  • FIG. 7 is a block diagram showing a structure of a power system according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram showing a relationship between an output current and a signal output by an AND gate in FIG. 7 ;
  • FIG. 9 is a block diagram showing a structure of another converter system according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram showing a relationship between a current of an output inductor and a signal output by an AND gate in FIG. 9 ;
  • FIG. 11 is a block diagram showing still another converter system according to an embodiment of the present disclosure.
  • FIG. 12 is a block diagram showing a structure of yet another converter system according to an embodiment of the present disclosure.
  • FIG. 13 is a block diagram showing a structure of a converter system according to an embodiment of the present disclosure.
  • FIG. 14 is a block diagram showing a structure of a converter system according to an embodiment of the present disclosure.
  • FIG. 15 is a block diagram showing a structure of a converter system according to an embodiment of the present disclosure.
  • FIG. 16 is a flowchart showing a driving method for a semiconductor switch according to an embodiment of the present disclosure.
  • FIG. 17 is a flowchart showing another driving method for a semiconductor switch according to an embodiment of the present disclosure.
  • FIG. 6 is a block diagram showing a converter system in one embodiment of the present disclosure.
  • the converter system A 1 includes a main circuit module and a control circuit module.
  • the main circuit module includes an input side section 1 , an output side section 3 and a semiconductor switch section 2 .
  • the main circuit module may be an inverter circuit, a rectifier circuit, a DC to DC circuit or an AC to AC circuit.
  • the input side section 1 and the output side section 3 include passive components as capacitors and inductors.
  • the semiconductor switch section 2 includes at least one semiconductor switch.
  • the main circuit module receives an input signal, and converts the input signal into a required output signal by the on and off of the semiconductor switch.
  • the control circuit module includes a driving circuit 20 for a semiconductor switch.
  • the driving circuit 20 is configured to provide a driving signal to the semiconductor switch to turn on or off the semiconductor switch.
  • the driving circuit 20 includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a turn-on driving unit 203 a and a turn-off driving unit 203 b .
  • the turn-off driving unit 203 b includes at least two turn-off driving units with different turn-off parameters. As shown in FIG. 6 , the turn-off driving unit 203 b may include a first turn-off driving unit 203 b 1 and a second turn-off driving unit 203 b 2 with different turn-off parameters.
  • the sampling unit 201 is configured to sample a sampling signal reflecting a working state of the semiconductor switch, for example, a sampling current IS.
  • the sampling unit 201 outputs the sampling current IS to the selection unit 202 .
  • the sampling current IS may be a current signal of the semiconductor switch or a current signal on passive components such as capacitors and inductors in the circuit, and but the disclosure is not limited in this regard.
  • the selection unit 202 receives a driving control signal DS, the sampling current IS and at least one reference value Ref.
  • the selection unit 202 determines the working state of the semiconductor switch according to the sampling current IS and the reference value Ref, and then selects a turn-off driving unit with a turn-off parameter adaptive to the determined working state to turn off the semiconductor switch.
  • the first turn-off driving unit 203 b 1 and the second turn-off driving unit 203 b 2 have different turn-off speeds, and in the embodiment, the selection unit 202 may be configured to select a turn-off driving unit having a slower turn-off speed when the sampling current IS is larger, and vice versa.
  • the driving control signal DS is a second control signal
  • the selection unit 202 selects the turn-on driving unit to turn on the semiconductor switch.
  • pluralities of turn-off driving units with different turn-off parameters are provided and a turn-off driving unit with a turn-off parameter adaptive to the working state of the semiconductor switch is selected to turn off the semiconductor switch.
  • a relatively small switching loss may be obtained and the system efficiency may be improved on one hand; on the other hand, the security character of the system may be improved and the reliability of the system may be increased.
  • turn-off parameters may be the turn-off resistance, turn-off voltages and turn-off currents, and the like of the turn-off driving units. Detailed description will be made as follows.
  • turn-off parameters in a driving circuit for a semiconductor switch are resistance of turn-off driving units.
  • a driving control signal DS is a first control signal
  • a selection unit selects a turn-off driving unit having turn-off resistance adaptive to the determined working state to turn off a semiconductor switch.
  • the turn-off driving units include a first turn-off driving unit and a second turn-off driving unit, and the turn-off resistance of the first turn-off driving unit is larger than the turn-off resistance of the second turn-off driving unit.
  • the selection unit receives a reference value and a sampling current, and compares the reference value with the sampling current: if the sampling current is larger than the reference value, then the selection unit may select the first turn-off driving unit to turn off the semiconductor switch; and if the sampling current is smaller than or equal to reference value, then the selection unit may select the second turn-off driving unit to turn off the semiconductor switch. More detailed descriptions will be given hereinafter with reference to FIGS. 7 to 12 .
  • the driving circuit for a semiconductor switch is applied to an inverter circuit.
  • An input side section 1 of a main circuit module of the inverter circuit includes a first capacitor C 1 and a second capacitor C 2 , and a first terminal of the first capacitor C 1 is coupled with a first terminal of the second capacitor C 2 .
  • a semiconductor switch section 2 of the main circuit module includes a half-bridge switching circuit composed of a first semiconductor switch S 1 and a second semiconductor switch S 2 .
  • An input terminal of the first semiconductor switch S 1 is coupled with a second terminal of the first capacitor C 1 .
  • a control terminal of the first semiconductor switch S 1 receives a driving signal output by the driving circuit.
  • An output terminal of the second semiconductor switch S 2 is coupled with a second terminal of the second capacitor C 2 .
  • a control terminal of the second semiconductor switch S 2 receives another driving signal (not shown) output by the driving circuit.
  • An output side section 3 of the main circuit module includes an output inductor Lf and a first output capacitor Cf 1 .
  • a first terminal of the output inductor Lf is coupled with an output terminal of the first semiconductor switch S 1 and an input terminal of the second semiconductor switch S 2 .
  • a second terminal of the output inductor Lf is coupled with an output port.
  • a first terminal of the first output capacitor Cf 1 is coupled with a second terminal of the output inductor Lf, and a second terminal of the first output capacitor Cf 1 is grounded.
  • Ls 1 and Ls 2 in the figure are parasitic inductors in the circuit.
  • the main circuit module of the inverter circuit converts DC voltages across the first capacitor C 1 and the second capacitor C 2 connected in series into an AC output voltage Vout.
  • the structure of the main circuit module is not limited to the half-bridge switching topology of the inverter circuit, it may be other circuits such as a DC conversion circuit or the like.
  • it may be a DC/DC buck converter circuit.
  • the driving circuit provided in the embodiment may also be employed in other circuit topologies such as a full-bridge circuit topology, three-level circuit topology or the like.
  • the first semiconductor switch S 1 and the second semiconductor switch S 2 include a MOSFET switch, an IGBT switch or a BJT switch, or one or more of switches formed by a plurality of MOSFET switches, IGBT switches or BJT switches connected in series or in parallel, wherein the MOSFET may either be a Si MOSFET or a MOSFET such as a SiC MOSFET or a GaN MOSFET made of a wide bandgap semiconductor material or other materials, and the present embodiment is not limited in this regard.
  • the control circuit module of the inverter circuit includes the driving circuit provided in the embodiment.
  • the driving circuit mainly includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a first turn-off driving unit, a second turn-off driving unit and a turn-on driving unit.
  • the sampling unit 201 may include current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like.
  • methods such as series sampling resistors may be employed, and alternatively, voltage drop across a sampling device may be directly employed.
  • the sampling unit 201 may include a Hall element H, a first sampling resistor Rs 1 , a first rectifier diode DS 1 , a second sampling resistor Rs 2 and a second rectifier diode DS 2 .
  • the Hall element H is configured to induce the current at a sampling node.
  • a first terminal of the first sampling resistor Rs 1 is coupled with a first terminal of the Hall element H, and a second terminal of the first sampling resistor Rs 1 is grounded.
  • An input terminal of the first rectifier diode DS 1 is coupled with the first terminal of the first sampling resistor Rs 1 , and an output terminal of the first rectifier diode DS 1 is coupled with the selection unit 202 .
  • a first terminal of the second sampling resistor Rs 2 is coupled with a second terminal of the Hall element H, and a second terminal of the first sampling resistor Rs 1 is grounded.
  • An input terminal of the second rectifier diode DS 2 is coupled with a first terminal of the second sampling resistor Rs 2 , and an output terminal of the second rectifier diode DS 2 is coupled with the selection unit 202 .
  • the sampling node is located at an output port of the main circuit module. In other embodiment of the present disclosure, the sampling node may also be located at other position of the main circuit module.
  • the Hall element H in the sampling unit 201 samples an output current io as a sampling current signal.
  • the sampling current signal flows to the first rectifier diode DS 1 and the second rectifier diode DS 2 through the first sampling resistor Rs 1 and the second sampling resistor Rs 2 , and then is rectified by the first rectifier diode DS 1 and the second rectifier diode DS 2 to obtain a sampling current IS.
  • the selection unit 202 may include a first comparator U 1 and a first AND gate U 3 .
  • the first comparator U 1 has input terminals receiving the sampling current IS and a reference value Ref, and outputs a comparison signal according to a comparison result of the sampling current IS and the reference value Ref. For example, if the absolute value of the sampling current IS is smaller than the reference value Ref, then the first comparator U 1 outputs a comparison signal of high level. If the absolute value of the sampling current IS is larger than the reference value Ref, then the first comparator U 1 outputs a comparison signal of low level.
  • An input terminal of the first AND gate U 3 receives the comparison signal and the other input terminal of the first AND gate U 3 receives a driving control signal DS.
  • the first AND gate U 3 performs “AND” operation on the received signals and then outputs a signal v 3 to a control terminal of a second switching device Q 3 .
  • the driving circuit may also include a first NOT gate U 5 .
  • An input terminal of the first NOT gate U 5 receives an original control signal DO.
  • the first NOT gate U 5 performs “NOT” operation on the original control signal DO and then outputs the foregoing driving control signal DS.
  • the first turn-off driving units may include a first switching device Q 1 and a first turn-off resistor Roff 1 .
  • An input terminal of the first switching device Q 1 is coupled with a low potential ⁇ Vee, and a control terminal of the first switching device Q 1 receives the driving control signal DS to turn on the first switching device Q 1 when the driving control signal DS is a first control signal.
  • a first terminal of the first turn-off resistor Roff 1 is coupled with an output terminal of the first switching device Q 1
  • a second terminal of the first turn-off resistor Roff 1 is coupled with a control terminal of the first semiconductor switch S 1 .
  • the switching devices in the driving circuit may include one or more of a MOSFET switch, an IGBT switch, a BJT switch and the like.
  • the MOSFET switch may include a Si MOSFET switch, a SiC MOSFET switch, a GaN MOSFET switch or the like.
  • the second turn-off driving unit may include the first switching device Q 1 , the first turn-off resistor Roff 1 , a second switching device Q 3 and a second turn-off resistor Roff 2 .
  • An input terminal of the second switching device Q 3 is coupled with the low potential ⁇ Vee, and a control terminal of the second switching device Q 3 receives a signal output by the selection unit 202 to turn on or off the second switching device Q 3 according to the output signal.
  • a first terminal of the second turn-off resistor Roff 2 is coupled with an output terminal of the second switching device Q 3
  • a second terminal of the second turn-off resistor Roff 2 is coupled with a control terminal of the first semiconductor switch S 1 .
  • the second turn-off driving unit shares a part of components of the first turn-off driving unit.
  • the first turn-off driving unit and the second turn-off driving unit may be respectively independent circuits.
  • the first switching device Q 1 is switched on when the driving control signal DS is a first control signal (for example, a high level signal). And when the absolute value of the sampling current IS is larger than the reference value Ref, then the comparison signal output by the first comparator U 1 is a low level signal, and the first AND gate U 3 outputs a low level signal, and thus the second switching device Q 3 is turned off. At this moment, the first turn-off driving unit works and the turn-off resistance is Roff 1 . While when the absolute value of the sampling current IS is smaller than or equal to the reference value Ref, then the comparison signal output by the first comparator U 1 is a high level signal, and the first AND gate U 3 outputs a high level signal to drive the second switching device Q 3 to be on.
  • a first control signal for example, a high level signal
  • the second turn-off driving unit works and the equivalent resistance is the resistance obtained by parallel of the first turn-off resistor Roff 1 and the second turn-off resistor Roff 2 .
  • the voltage at the control terminal of the semiconductor switch S 1 is pulled down no matter the first turn-off driving unit or the second turn-off driving unit works; therefore, the semiconductor switch S 1 is turned off.
  • the turn-on driving unit may include a fourth switching device Q 7 and an on resistor Ron.
  • An input terminal of the fourth switching device Q 7 is coupled with a high potential +Vcc, and a control terminal of the fourth switching device Q 7 receives a driving control signal DS.
  • a first terminal of the on resistor Ron is coupled with an output terminal of the fourth switching device Q 7
  • a second terminal of the on resistor Ron is coupled with the control terminal of the first semiconductor switch S 1 .
  • the driving control signal DS is a second control signal (a lower level signal, for example)
  • the fourth switching device Q 7 is switched on, the turn-on driving unit works, and the on resistance is Ron. At this moment, the voltage at the control terminal of the semiconductor switch S 1 is elevated; therefore, the semiconductor switch S 1 is switched on.
  • the driving circuit in the embodiment may improve the efficiency of the converter system under the premise of satisfying the voltage stress of the semiconductor switch.
  • the change of the turn-off resistance of the semiconductor switch in the driving circuit is a fundamental-wave-based change (line cycle), and this is more reliable than the quick switching of the turn-off resistance in a switching period.
  • FIG. 9 is a block diagram showing another embodiment of an inverter circuit in an embodiment.
  • the sampling node of the sampling unit 201 is located between a second terminal of an output inductor Lf and a first terminal of the first output capacitor Cf 1 , and the sampling current IS is the current i Lf of the output inductor Lf.
  • Other sections of the circuit are identical to the inverter circuit in FIG. 7 , which will not be elaborated herein.
  • the sampling current IS may also be a current flowing through the semiconductor switch and the like, which will not be specially defined in the embodiment.
  • FIG. 10 shows a relationship between the current of the output inductor Lf and the signal output by the first AND gate U 3 in FIG. 9 .
  • the signal v 3 output by the first AND gate U 3 is a high level signal, and the turn-off resistance of the first semiconductor switch S 1 has a smaller value, i.e., Roff 1 /Roff 2 .
  • Roff 1 /Roff 2 the turn-off resistance of the first semiconductor switch S 1 has a smaller value
  • the signal v 3 output by the first AND gate U 3 is a low level signal, and the turn-off resistance of the first semiconductor switch S 1 has a larger value, i.e., Roff 1 .
  • Roff 1 the turn-off resistance of the first semiconductor switch S 1 satisfies requirements. It may be seen from FIG. 10 that since the current i Lf of the output inductor Lf has high frequency ripples, switching between high level and low level of the signal v 3 output by the first AND gate U 3 within one switching period appear at A and B.
  • the signal v 3 output by the first AND gate U 3 appears to be a high level signal for a short period at A, there is no actual turn-off action in this period. Therefore, appearance of Roff 1 /Roff 2 in this short period does not occur actually. Similarly, appearance of the Roff 1 at B in a short period does not occur actually. Therefore, the turn-off resistance is actually switched based on fundamental wave frequency.
  • a hysteresis method may be employed for determination.
  • the current through the output inductor Lf may also be filtered to filter the high frequency ripples, and determination is performed after a waveform similar to the sampling current IS in FIG. 8 is obtained, so as to select proper turn-off resistance.
  • FIG. 11 is a block diagram showing another implementation of an inverter circuit in an embodiment.
  • a main circuit module of the inverter circuit is a three-level topological structure, and more particularly, is a neutral point clamped (NPC) three-level topology.
  • the main circuit module of the inverter circuit includes a first bridge arm and a second bridge arm.
  • the first bridge arm composed of a first capacitor C 1 and a second capacitor C 2 connected in series forms an input side section 1 of the main circuit module of the inverter circuit.
  • the second bridge arm consists of a first semiconductor switch S 1 , a second semiconductor switch S 2 , a third semiconductor switch S 3 and a fourth semiconductor switch S 4 connected in series orderly.
  • the main circuit module of the inverter circuit further includes a first diode D 1 and a second diode D 2 .
  • a cathode of the first diode D 1 is coupled with a junction of the first semiconductor switch S 1 and the second semiconductor switch S 2 .
  • An anode of the first diode D 1 is coupled with a junction of the first capacitor C 1 and the second capacitor C 2 .
  • An anode of the second diode D 2 is coupled with a junction of the third semiconductor switch S 3 and the fourth semiconductor switch S 4 .
  • a cathode of the second diode D 2 is coupled with an anode of the first diode D 1 and the junction of the first capacitor C 1 and the second capacitor C 2 .
  • the first semiconductor switch S 1 , the second semiconductor switch S 2 , the third semiconductor switch S 3 , the fourth semiconductor switch S 4 , the first diode D 1 and the second diode D 2 constitute a semiconductor switch section 2 of the main circuit module.
  • the main circuit module of the inverter circuit further includes an output inductor Lf and a first output capacitor Cf 1 to form an output side section 3 .
  • a first terminal of the output inductor Lf is coupled with the junction of the second semiconductor switch S 2 and the semiconductor switch S 3 .
  • a first terminal of the first output capacitor Cf 1 is coupled with a second terminal of the output inductor Lf and an output port, and a second terminal of the first output capacitor Cf 1 is grounded.
  • Ls 1 , Ls 2 and Ls 3 as shown in the figure are parasitic inductors in the circuit.
  • the three-level circuit in FIG. 11 may employ semiconductor switches having a lower rated voltage, thus obtaining better loss characteristics.
  • Other sections of the circuit are identical to that of the inverter circuit in FIG. 9 , which will not be elaborated herein.
  • the three-level topological structure may also be an active neutral point clamped (ANPC) three-level topology or T-type neutral point clamped (TNPC) three-level topology, and the like, which will not be specially defined in the embodiment.
  • ANPC active neutral point clamped
  • TNPC T-type neutral point clamped
  • a main circuit module of the rectifier circuit includes a first bridge arm, a second bridge arm, a first inductor Lf 1 , a second inductor Lf 2 , an AC power supply AC, a first diode D 1 , a second diode D 2 , a first output capacitor Cf 1 and a second output capacitor Cf 2 .
  • the first bridge arm consists of a first thyristor T 1 and a second thyristor T 2 connected in series
  • the second bridge arm consists of a first semiconductor switch S 1 and a second semiconductor switch S 2 connected in series.
  • the first inductor Lf 1 is connected in series between the first thyristor T 1 and the first semiconductor switch S 1
  • the second inductor Lf 2 is connected in series between the second thyristor T 2 and the second semiconductor switch S 2 .
  • a first terminal of the AC power supply AC is coupled with a junction of the first thyristor T 1 and the second thyristor T 2
  • a second terminal of the AC power supply AC is coupled with a junction of the first semiconductor switch S 1 and the second semiconductor switch S 2 .
  • An anode of the first diode D 1 is coupled with a junction of the first inductor Lf 1 and the first semiconductor switch S 1
  • a cathode of the second diode D 2 is coupled with a junction of the second inductor Lf 2 and the second semiconductor switch S 2
  • a first terminal of the first output capacitor Cf 1 is coupled with the cathode of the first diode DE
  • a first terminal of the second output capacitor Cf 2 is coupled with the anode of the first diode D 1
  • a second terminal of the second output capacitor Cf 2 is coupled with the second terminal of the first output capacitor Cf 1 and the junction of the first semiconductor switch S 1 and the second semiconductor switch S 2 .
  • Ls 1 , Ls 2 , Ls 3 and Ls 4 as shown in the figure are parasitic inductors in the circuit.
  • the first inductor Lf 1 and the second inductor Lf 2 above mentioned constitute an input side section 1 of the main circuit module, and the first output capacitor Cf 1 and the second output capacitor Cf 2 constitute an output side section 3 of the main circuit module.
  • the first semiconductor switch S 1 , the first diode D 1 , the second semiconductor switch S 2 and the second diode D 2 constitute a semiconductor switch section 2 of the main circuit module.
  • the positive half cycle of the voltage of the AC power supply AC is rectified by the first thyristor T 1 and is transferred to the first inductor Lf 1
  • the negative half cycle of the voltage of the AC power supply AC is rectified by the second thyristor T 2 and is transferred to the second inductor Lf 2
  • the first inductor Lf 1 , the first semiconductor switch S 1 and the first diode D 1 constitute a boost power factor correction (boost PFC) circuit to realize power factor correction function on the positive half cycle of the voltage of the AC power supply AC.
  • boost PFC boost power factor correction
  • the second inductor Lf 2 , the second semiconductor switch S 2 and the second diode D 2 constitute a power factor correction circuit to realize power factor correction function on the negative half cycle of the voltage of the AC power supply AC.
  • the first capacitor C 1 and the second capacitor C 2 are filtering capacitors which are configured to reduce voltage ripples at the DC side.
  • the control circuit module of the inverter circuit includes the driving circuit provided in the embodiment.
  • the driving circuit mainly includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a first turn-off driving unit, a second turn-off driving unit and a turn-on driving unit.
  • the sampling unit 201 may include current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like.
  • current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like.
  • series sampling resistors may be employed, and alternatively a voltage drop across a sampling device may be directly employed.
  • the sampling unit 201 may include a Hall element H and a first sampling resistor Rs 1 in the embodiment.
  • the Hall element H is configured to induce the current at a sampling node.
  • a first terminal of the Hall element H is grounded and a second terminal thereof is coupled with the selection unit 202 .
  • the first sampling resistor Rs 1 is connected in parallel between the first terminal and the second terminal of the Hall element H.
  • the sampling node of the sampling unit 201 is located between the first thyristor T 1 and the first inductor Lf 1 or between the second thyristor T 2 and the second inductor Lf 2 .
  • the sampling node may also be located at other positions of the main circuit module.
  • the Hall element H in the sampling unit 201 samples the current through the first inductor Lf 1 as a sampling current IS. Since the current through the first inductor Lf 1 is a DC signal, rectifying is not needed.
  • the sampling current IS is input to an input terminal of a first comparator U 1 in the selection unit 202 and is compared with a reference value Ref by the first comparator U 1 .
  • the structures and working principles of the selection unit 202 and the driving unit are similar to that in FIG. 9 , which will not be repeatedly elaborated herein.
  • the rectifier circuit in the embodiment may also be changed into other circuit topologies.
  • the first semiconductor switch S 1 and the second semiconductor switch S 2 may include a MOSFET switch, an IGBT switch or a BJT switch, or one or more of switches formed by a plurality of MOSFET switches, IGBT switches or BJT switches connected in series or in parallel.
  • the MOSFET may either be a Si MOSFET or a MOSFET such as a SiC MOSFET or a GaN MOSFET made of wide bandgap semiconductor material or other materials. The present disclosure does not impose specific limitations on this.
  • turn-off parameters in a driving circuit for a semiconductor switch are turn-off current of turn-off driving units.
  • a driving control signal is a first control signal
  • a selection unit selects a turn-off driving unit having a turn-off current adaptive to the determined working state to turn off a semiconductor switch.
  • the turn-off driving units include a first turn-off driving unit and a second turn-off driving unit, and the turn-off current of the first turn-off driving unit is smaller than the turn-off current of the second turn-off driving unit.
  • the selection unit receives a reference value and a sampling current, and compares the reference value with the sampling current: if the sampling current is larger than the reference value, then the selection unit may select the first turn-off driving unit to turn off the semiconductor switch; and if the sampling current is smaller than or equal to the reference value, then the selection unit may select the second turn-off driving unit to turn off the semiconductor switch. More detailed descriptions will be given hereinafter with reference to FIG. 13 .
  • the driving circuit is applied in an inverter circuit.
  • the structure of a main circuit module of the inverter circuit is similar to that of the main circuit module of the inverter circuit in the above embodiments.
  • a control circuit module of the inverter circuit includes the driving circuit provided in the embodiment.
  • the driving circuit mainly includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a first turn-off driving unit, a second turn-off driving unit and a turn-on driving unit.
  • the sampling unit 201 may include current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like. In addition, such method as series sampling resistors may be employed, and alternatively, a voltage drop across a sampling device may be directly employed.
  • a sampling current IS sampled by the sampling unit 201 is input to an input terminal of a first comparator U 1 in the selection unit 202 which will be described below and is compared with a reference value Ref by the first comparator U 1 .
  • the implementation of the sampling unit 201 is similar to that in the above embodiments, which will not be repeatedly elaborated herein.
  • the selection unit 202 may include the first comparator U 1 and a first AND gate U 3 .
  • the first comparator U 1 has input terminals receiving the sampling current IS and the reference value Ref, and outputs a first comparison signal according to a comparison result of the sampling current IS and the reference value Ref. For example, if the absolute value of the sampling current IS is smaller than the reference value Ref, then the first comparator U 1 outputs a first comparison signal of high level. If the absolute value of the sampling current IS is larger than the reference value Ref, then the first comparator U 1 outputs a first comparison signal of low level.
  • An input terminal of the first AND gate U 3 receives the first comparison signal and the other input terminal thereof receives a driving control signal DS.
  • the first AND gate U 3 performs “AND” operation on the received signals and then outputs a signal to a control terminal of a second switching device Q 3 .
  • the driving circuit may also include a first NOT gate U 5 .
  • An input terminal of the first NOT gate U 5 receives an original control signal DO.
  • the first NOT gate U 5 performs “NOT” operation on the original control signal DO and then outputs the foregoing driving control signal DS.
  • the first turn-off driving unit may include a first switching device Q 1 and a first turn-off resistor Roff 1 .
  • An input terminal of the first switching device Q 1 is coupled with a low potential ⁇ Vee, and a control terminal of the first switching device Q 1 receives the driving control signal DS.
  • a first terminal of the first turn-off resistor Roff 1 is coupled with an output terminal of the first switching device Q 1 , and a second terminal of the first turn-off resistor Roff 1 is coupled with a control terminal of the first semiconductor switch S 1 .
  • the switching devices in the driving circuit may include one or more of a MOSFET switch, an IGBT switch, a BJT switch, and the like
  • the MOSFET switch may include a Si MOSFET switch, a SiC MOSFET switch, a GaN Mosfet switch or the like.
  • the second turn-off driving unit may include the first switching device Q 1 , the first turn-off resistor Roff 1 , a coupling capacitor C 3 , a first resistor R 1 , a second comparator U 2 , a second resistor R 2 and a second switching device Q 3 .
  • a first terminal of the coupling capacitor C 3 receives a signal output by the selection unit 202 .
  • a first terminal of the first resistor R 1 is coupled with a second terminal of the coupling capacitor C 3
  • a second terminal of the first resistor R 1 is coupled with a reference ground.
  • the second comparator U 2 has input terminals coupled with the first terminal of the first resistor R 1 and the reference ground, and outputs a second comparison signal according to the comparison result of the potential at the first terminal of the first resistor R 1 and the potential at the reference ground.
  • a first terminal of the second resistor R 2 is coupled with the low potential ⁇ Vee.
  • An input terminal of the second switching device Q 3 is coupled with a second terminal of the second resistor R 2
  • an output terminal of the second switching device Q 3 is coupled with a control terminal of the first semiconductor switch S 1
  • the second switching device Q 3 has a control terminal receiving a second comparison signal to turn on or off the second switching device Q 3 according to the signal.
  • the first switching device Q 1 is switched on when the driving control signal DS is the first control signal (a high level signal, for example). And, when the absolute value of the sampling current IS is larger than the reference value Ref, then the comparison signal output by the first comparator U 1 is a low level signal, and the first AND gate U 3 outputs a low level signal, and thus the second switching device Q 3 is turned off. At this moment, the first turn-off driving unit works and turns off the first semiconductor switch S 1 .
  • the turn-off current at this moment is equal to the turn-off current of the first turn-off driving unit plus idc.
  • the turn-off current is increased, and the turn-off speed of the first semiconductor switch S 1 is increased, and the turn-off loss of the first semiconductor switch S 1 is reduced as well.
  • the second comparator U 2 outputs a low level signal to drive the second switching device Q 3 to be off, and the current source idc is cut away from the turn-off driving unit.
  • the turn-on driving unit may include a fourth switching device Q 7 and a turn-on resistor Ron.
  • An input terminal of the fourth switching device Q 7 is coupled with a high potential +Vcc, and a control terminal of the fourth switching device Q 7 receives a driving control signal DS.
  • a first terminal of the turn-on resistor Ron is coupled with an output terminal of the fourth switching device Q 7
  • a second terminal of the turn-on resistor Ron is coupled with a control terminal of the first semiconductor switch S 1 .
  • the driving control signal DS is a second control signal (a low level signal, for example)
  • the fourth switching device Q 7 is switched on, the voltage at the control terminal of the semiconductor switch S 1 is elevated; therefore, the first semiconductor switch S 1 is switched on.
  • the driving circuit in the embodiment is used in the inverter circuit; however, it may also be applied in other circuits such as a DC conversion circuit or the like.
  • the present disclosure does not impose specific limitations on this.
  • turn-off parameters in a driving circuit are turn-off voltages of turn-off driving units.
  • a selection unit selects a turn-off driving unit having a turn-off voltage adaptive to the determined working state to turn off a semiconductor switch.
  • the turn-off driving units include a first turn-off driving unit and a second turn-off driving unit, and the turn-off voltage of the first turn-off driving unit is lower than the turn-off voltage of the second turn-off driving unit.
  • the selection unit receives a reference value and a sampling current, and compares the reference value with the sampling current: if the sampling current is larger than the reference value, then the selection unit may select the first turn-off driving unit to turn off the semiconductor switch; and if the sampling current is smaller than or equal to the reference value, then the selection unit may select the second turn-off driving unit to turn off the semiconductor switch. More detailed descriptions will be given hereinafter with reference to FIG. 14 .
  • the driving circuit for a semiconductor switch is applied in an inverter circuit.
  • the structure of a main circuit module of the inverter circuit is similar to that of the main circuit module of the inverter circuit in the above embodiments.
  • a control circuit module of the inverter circuit includes the driving circuit provided in the embodiment.
  • the driving circuit mainly includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a first turn-off driving unit, a second turn-off driving unit and a turn-on driving unit.
  • the sampling unit 201 may include current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like. In addition, such method as series sampling resistors may be employed, and alternatively, even a voltage drop across a sampling device may be directly employed.
  • a sampling current IS sampled by the sampling unit 201 is input to an input terminal of a first comparator U 1 in the selection unit 202 which will be described below and is compared with a reference value Ref by the first comparator U 1 .
  • the implementation of the sampling unit 201 is similar to that in the above embodiments, which will not be repeatedly elaborated herein.
  • the selection unit 202 may include a first comparator U 1 , a first NOT gate U 5 , a first AND gate U 3 and a second AND gate U 4 .
  • the first comparator U 1 has input terminals receiving the sampling current IS and the reference value Ref, and outputs a comparison signal according to a comparison result of the sampling current IS and the reference value Ref. For example, if the absolute value of the sampling current IS is smaller than the reference value Ref, then the first comparator U 1 outputs a comparison signal of high level. If the absolute value of the sampling current IS is larger than the reference value Ref, then the first comparator U 1 outputs a comparison signal of low level.
  • the first NOT gate U 5 has an input terminal receiving the comparison signal, performs “AND” operation on the received signal and then outputs a signal.
  • the first AND gate U 3 has input terminals receiving a driving control signal DS and the signal output by the first NOT gate U 5 , performs “AND” operation on the received signals, and then outputs a first signal to a control terminal of the first switching device Q 1 .
  • the second AND gate U 4 has input terminals receiving the driving control signal DS and the comparison signal, performs “AND” operation on the received signals, and then outputs a second signal to a control terminal of the second switching device Q 3 .
  • the driving circuit may also include a second NOT gate U 6 . An input terminal of the second NOT gate U 6 receives an original control signal DO. The second NOT gate U 6 performs “NOT” operation on the original control signal DO and then outputs the driving control signal DS.
  • the first turn-off driving unit may include a first switching device Q 1 and a first turn-off resistor Roff 1 .
  • An input terminal of the first switching device Q 1 is coupled with a first low potential ⁇ Vee 1
  • a control terminal of the first switching device Q 1 receives a first signal output by the selection unit 202 .
  • a first terminal of the first turn-off resistor Roff 1 is coupled with an output terminal of the first switching device Q 1
  • a second terminal of the first turn-off resistor Roff 1 is coupled with a control terminal of the first semiconductor switch S 1 .
  • the switching devices in the driving circuit may include one or more of a MOSFET switch, an IGBT switch, a BJT switch and the like, and the MOSFET switch may include a Si MOSFET switch, a SiC MOSFET switch, a GaN MOSFET switch or the like.
  • the second turn-off driving unit may include a first turn-off resistor Roff 1 and a second switching device Q 3 .
  • An input terminal of the second switching device Q 3 is coupled with a second low potential ⁇ Vee 2
  • an output terminal of the second switching device Q 3 is coupled with a first terminal of the first turn-off resistor Roff 1
  • a control terminal of the second switching device Q 3 receives a second signal output by the selection unit 202 .
  • the comparison signal output by the first comparator U 1 is a low level signal when the absolute value of the sampling current IS is larger than the reference value Ref; therefore, signals input to one input terminal of the first AND gate U 3 and one input terminal of the second AND gate U 4 are respectively a high level signal and a low level signal.
  • the driving control signal DS is a first control signal (a high level signal, for instance)
  • the signals input to the other input terminal of the first AND gate U 3 and the other input terminal of the second AND gate U 4 are both high level signals.
  • the first signal output by the first AND gate U 3 is a high level signal
  • the second signal output by the second AND gate U 4 is a low level signal.
  • the first switching device Q 1 is switched on and the second switching device Q 2 is turned off.
  • the first turn-off driving unit turns off the first semiconductor switch S 1 through the first turn-off resistor Roff 1 and a first turn-off voltage (i.e., the voltage at the first low potential ⁇ Vee 1 ).
  • a first turn-off voltage i.e., the voltage at the first low potential ⁇ Vee 1
  • the second switching device Q 2 is switched on and the first switching device Q 1 is turned off, and the second turn-off driving unit turns off the first semiconductor switch S 1 through the first turn-off resistor Roff 1 and a second turn-off voltage (i.e., the voltage at the second low potential ⁇ Vee 2 ).
  • the voltage value at the second low potential Vee 2 is set to be larger than the voltage value at the first low potential Vee 1 , and thus, the turn-off speed may be improved and the switching loss may be reduced when the output current is smaller, and the turn-off speed may be decreased when the output current is larger. Consequently, the voltage stress requirements may be satisfied.
  • the turn-on driving unit may include a fourth switching device Q 7 and a turn-on resistor Ron.
  • An input terminal of the fourth switching device Q 7 is coupled with a high potential +Vcc, and a control terminal of the fourth switching device Q 7 receives a driving control signal DS.
  • a first terminal of the on resistor Ron is coupled with an output terminal of the fourth switching device Q 7
  • a second terminal of the on resistor Ron is coupled with a control terminal of the first semiconductor switch S 1 .
  • the driving control signal DS is a second control signal (a low level signal, for instance)
  • the fourth switching device Q 7 is switched on, and the voltage at the control terminal of the semiconductor switch S 1 is elevated; therefore, the first semiconductor switch S 1 is switched on.
  • the driving circuit in the embodiment is used in the inverter circuit; however, it may also be applied in other circuits such as a DC conversion circuit or the like.
  • the present embodiment does not impose specific limitations on this.
  • the number of the turn-off driving units is two. However, it shall be readily appreciated that more turn-off driving units may be included.
  • turn-off parameters in a driving circuit for a semiconductor switch are turn-off voltages of the turn-off driving units and the turn-off driving units include a first turn-off driving unit, a second turn-off driving unit and a third turn-off driving unit.
  • a selection unit selects a turn-off driving unit having a turn-off voltage adaptive to the determined working state to turn off a semiconductor switch. For example, the turn-off voltages of the first turn-off driving unit, the second turn-off driving unit and the third turn-off driving unit rise in turn.
  • the selection unit receives a first reference value and a second reference value larger than the first reference value, and compares the reference values with a sampling current IS: if the sampling current IS is larger than the second reference value, then the selection unit may select the first turn-off driving unit to turn off the semiconductor switch; if the sampling current IS is larger than the first reference value but smaller than or equal to the second reference value, then the selection unit may select the second turn-off driving unit to turn off the semiconductor switch; and if the sampling current IS is smaller than or equal to the first reference value, then the selection unit may select the third turn-off driving unit to turn off the semiconductor switch. More detailed descriptions will be given hereinafter with reference to FIG. 15 .
  • the driving circuit is applied in an inverter circuit.
  • the structure of a main circuit module of the inverter circuit is similar to that of the main circuit module of the inverter circuit in the above embodiments.
  • a control circuit module of the inverter circuit includes the driving circuit provided in the embodiment.
  • the driving circuit mainly includes a sampling unit 201 , a selection unit 202 and a driving unit 203 .
  • the driving unit 203 includes a first turn-off driving unit, a second turn-off driving unit, a third turn-off driving unit and a turn-on driving unit.
  • the sampling unit 201 may include current sampling elements such as a current transformer, a Hall element, a Rogowski coil or the like. In addition, such method as series sampling resistors may be employed, and alternatively, a voltage drop across a sampling device may be directly employed.
  • a sampling current IS sampled by the sampling unit 201 is input to an input terminal of an analogue-to-digital converter U 7 in the selection unit 202 which will be described below and is compared with a reference value by a comparator.
  • the implementation of the sampling unit 201 is similar to that in the above embodiments, which will not be repeatedly elaborated herein.
  • the first turn-off driving unit may include a first switching device Q 1 and a first turn-off resistor Roff 1 .
  • An input terminal of the first switching device Q 1 is coupled with a first low potential ⁇ Vee 1
  • a control terminal of the first switching device Q 1 receives a first signal output by the selection unit 202 .
  • a first terminal of the first turn-off resistor Roff 1 is coupled with an output terminal of the first switching device Q 1
  • a second terminal of the first turn-off resistor Roff 1 is coupled with a control terminal of the first semiconductor switch S 1 .
  • the switching devices in the driving circuit may include one or more of a MOSFET switch, an IGBT switch, a BJT switch and the like, and the MOSFET switch may include a Si MOSFET switch, a SiC MOSFET switch, a GaN Mosfet switch or the like.
  • the second turn-off driving unit may include a first turn-off resistor Roff 1 and a second switching device Q 3 .
  • the input terminal of the second switching device Q 3 is coupled with a second low potential ⁇ Vee 2 .
  • the potential at the second low potential ⁇ Vee 2 in the embodiment is higher than the potential at the first low potential ⁇ Vee 1 .
  • An output terminal of the second switching device Q 3 is coupled with a first terminal of the first turn-off resistor Roff 1 , the second switching device Q 3 has a control terminal receiving a second signal output by the selection unit 202 to turn on or off the second switching device Q 3 according to the signal.
  • the second turn-off driving unit in the embodiment shares a part of components of the first turn-off driving unit, the first turn-off driving unit and the second turn-off driving unit may also be respectively independent circuits in other embodiments.
  • the third turn-off driving unit may include the first turn-off resistor Roff 1 and a third switching device Q 5 .
  • An input terminal of the third switching device Q 5 is coupled with a third low potential ⁇ Vee 3 .
  • the potential at the third low potential ⁇ Vee 3 in the embodiment is higher than the potential at the second low potential ⁇ Vee 2 .
  • An output terminal of the third switching device Q 5 is coupled with a first terminal of the first turn-off resistor Roff 1 , and the third switching device Q 5 has a control terminal receiving a third signal output by the selection unit 202 to turn on or off the third switching device Q 5 according to the signal.
  • the third turn-off driving unit in the embodiment shares a part of components of the first turn-off driving unit and the second turn-off driving unit
  • the first turn-off driving unit, the second turn-off driving unit and the third turn-off driving unit may also be respectively independent circuits in other embodiments.
  • the selection unit 202 may include an analogue-to-digital converter U 7 and a digital controller U 8 .
  • the analogue-to-digital converter U 7 has an input terminal receiving a sampling current IS, performs analogue-to-digital conversion on the sampling current IS and then outputs a digital signal.
  • the digital controller U 8 has input terminals receiving a driving control signal DS and the sampling current IS, performs operations and processes on the received digital signals and then outputs a first signal En 1 to a control terminal of the first switching device Q 1 , or outputs a second signal En 2 to a control terminal of the second switching device Q 3 , or outputs a third signal En 3 to a control terminal of the third switching device Q 5 .
  • the digital controller U 8 may also be substituted by an analog circuit device, which will not be elaborated in detail herein.
  • the driving circuit may also include a first NOT gate U 5 .
  • the first NOT gate U 5 has an input terminal receiving an original control signal DO.
  • the first NOT gate U 5 performs “NOT” operation on the original control signal DO and then outputs the driving control signal DS.
  • the digital controller U 8 compares the sampling current IS with two different reference values which are set internally.
  • the reference values include a first reference value and a second reference value, and the first reference value is smaller than the second reference value. If the comparison result is that the sampling current IS is larger than the second reference value, then the digital controller U 8 outputs a first signal (a high level signal, for instance) to a control terminal of the first switching device Q 1 to drive the first switching device Q 1 to be on, and thus the first semiconductor switch S 1 is turned off through a first turn-off voltage (i.e., the voltage at the first low potential ⁇ Vee 1 ).
  • a first signal a high level signal, for instance
  • the digital controller U 8 If the comparison result is that the sampling current IS is smaller than the second reference value but larger than the first reference value, then the digital controller U 8 outputs a second signal (a high level signal, for instance) to a control terminal of the second switching device Q 3 to drive the second switching device Q 3 to be on, and thus the first semiconductor switch S 1 is turned off through a second turn-off voltage (i.e., the voltage at the second low potential ⁇ Vee 2 ).
  • a second signal a high level signal, for instance
  • the digital controller U 8 If the comparison result is that the sampling current IS is smaller than the first reference value, then the digital controller U 8 outputs a third signal (a high level signal, for instance) to a control terminal of the third switching device Q 5 to drive the third switching device Q 5 to be on, and thus the first semiconductor switch S 1 is turned off through a third turn-off voltage (i.e., the voltage at the third low potential ⁇ Vee 3 ).
  • a third signal a high level signal, for instance
  • the driving circuit in the embodiment is used in the inverter circuit; however, it may also be applied in other circuits such as a DC conversion circuit or the like.
  • the turn-off parameters of the driving circuit in the embodiment are the turn-off voltages; however, the turn-off parameters may also be other turn-off parameters such as the turn-off resistance, turn-off currents and the like.
  • the driving circuit in the embodiment only has three turn-off driving units, more turn-off driving units may be included during practical applications. The present embodiment does not impose specific limitations on this.
  • a driving method for a semiconductor switch is applied in the driving circuits as shown in FIGS. 6-15 which includes a plurality of turn-off driving units having different turn-off parameters and a turn-on driving unit. As shown in FIG. 16 , the driving method may include the following steps.
  • step S 10 a sampling current reflecting a working state of the semiconductor switch is sampled.
  • the method may further include step of rectifying the sampled current to obtain the sampling current.
  • step S 12 a driving control signal and one or more reference values are received.
  • step S 14 whether the driving control signal is a first control signal or a second control signal is determined: when the driving control signal is the first control signal, step S 16 is performed, and when the driving control signal is the second control signal, step S 18 is performed.
  • step S 16 the working state of the semiconductor switch is determined according to the sampling current and the reference values, and a turn-off driving unit having a turn-off parameter adaptive to the determined working state is selected to turn off a semiconductor switch.
  • step S 18 a turn-on driving unit is selected to switch on the semiconductor switch.
  • selecting a turn-off driving unit having a turn-off parameter adaptive to the determined working state to turn off the semiconductor switch may include:
  • the driving method may include the following steps.
  • step S 101 a current signal reflecting a working state of the semiconductor switch is sampled.
  • step S 102 whether the current signal sampled in step S 101 is a DC signal is determined:
  • step S 103 if the current signal is not a DC signal, then step S 103 is performed; if the current signal is a DC signal, then step S 104 is performed.
  • step S 103 the current signal sampled in step S 101 is rectified, and the absolute value of the rectified current signal serves as a sampling current.
  • step S 104 the absolute value of the current signal sampled in step S 101 serves as a sampling current.
  • step S 141 whether the sampling current is larger than a second reference value is determined:
  • step S 142 if the sampling current is larger than the second reference value, then step S 142 is performed; if the sampling current is smaller than or equal to the second reference value, then step S 143 is performed.
  • step S 142 a third turn-off driving unit is selected to turn off the semiconductor switch.
  • the third turn-off driving unit has a relatively slow turn-off speed, and thus it is guaranteed that the voltage stress requirements of the semiconductor switch is met under a larger current.
  • step S 143 whether the sampling current is larger than a first reference value is determined:
  • step S 144 if the sampling current is larger than the first reference value, then step S 144 is performed; if the sampling current is smaller than or equal to the first reference value, then step S 145 is performed.
  • step S 144 a second turn-off driving unit is selected to turn off the semiconductor switch.
  • the second turn-off driving unit has a moderate turn-off speed, and thus a smaller turn-off loss may be obtained and meanwhile the requirements of the voltage stress of the semiconductor switch can be met.
  • step S 145 a first turn-off driving unit is selected to turn off the semiconductor switch.
  • the first turn-off driving unit has a relatively fast turn-off speed, and thus the turn-off loss may be further reduced, and meanwhile the voltage stress requirements of the semiconductor switch may be met.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190363711A1 (en) * 2016-12-21 2019-11-28 Mitsubishi Electric Corporation Gate-drive system
US10637465B2 (en) 2018-07-25 2020-04-28 Fuji Electric Co., Ltd. Driving device and switching device
TWI693779B (zh) * 2018-12-07 2020-05-11 大陸商昂寶電子（上海）有限公司 使用霍爾效應感測器的開關模式功率轉換器及其方法
US20230145803A1 (en) * 2020-04-07 2023-05-11 Panasonic Intellectual Property Management Co., Ltd. Control circuit and switch device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9729144B2 (en) * 2013-07-31 2017-08-08 Schneider Electric Solar Inverters Usa, Inc. Isolated uni-polar transistor gate drive
US9793386B2 (en) * 2015-10-14 2017-10-17 Ford Global Technologies, Llc Multiple zone power semiconductor device
DE102016110035B4 (de) * 2016-05-31 2020-09-10 Infineon Technologies Ag Elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Transistor mit breiter Bandlücke umfasst, und eine elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Junction-Feldeffekttransistor umfasst, der einen Halbleiterbereich aus Siliziumcarbid umfasst
CN106788112B (zh) * 2016-12-27 2019-07-23 上海科梁信息工程股份有限公司 电机驱动主电路结构及其信号调制方法、控制器
CN107968569B (zh) * 2017-01-10 2019-06-21 成都启臣微电子股份有限公司 一种同步整流控制器及同步整流控制方法
US10103633B1 (en) * 2017-08-31 2018-10-16 Dialog Semiconductor (Uk) Limited Switching converter with power level selection
CN107733409B (zh) * 2017-10-27 2020-11-10 南京轨道交通系统工程有限公司 一种高压大功率igbt驱动电路
JP7073706B2 (ja) * 2017-12-19 2022-05-24 富士電機株式会社 駆動装置および半導体装置
US11336200B2 (en) * 2018-04-06 2022-05-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Power conversion apparatus
CN109618440B (zh) * 2019-01-30 2021-12-03 九阳股份有限公司 一种电磁加热控制电路及控制方法
EP3719997A1 (de) * 2019-04-01 2020-10-07 Siemens Aktiengesellschaft Beschaltung eines halbleiterschalters
CN112787490B (zh) * 2021-01-28 2024-09-06 深圳市矽塔科技有限公司 一种全桥下管驱动电路及其驱动器
CN112821730B (zh) * 2021-02-22 2024-05-17 北京交通大学 一种新型驱动拓扑及其驱动方法与串扰抑制方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1023743A (ja) 1996-07-05 1998-01-23 Mitsubishi Electric Corp 半導体素子の駆動回路
US5926012A (en) 1996-09-20 1999-07-20 Fuji Electric Co., Ltd. Gate drive circuit in power converter with condition detection device
CN1588799A (zh) 2004-07-09 2005-03-02 清华大学 逆阻式绝缘栅双极型晶体管的驱动保护电路
JP2006332952A (ja) 2005-05-25 2006-12-07 Denso Corp 負荷駆動装置及び負荷駆動装置の出力調整方法
JP2008289048A (ja) 2007-05-21 2008-11-27 Denso Corp 半導体素子駆動回路
CN101820276A (zh) 2009-02-05 2010-09-01 Abb公司 控制igbt的方法和栅极驱动器
JP2014045598A (ja) 2012-08-28 2014-03-13 Denso Corp 駆動対象スイッチング素子の駆動回路
JP2014150696A (ja) 2013-02-04 2014-08-21 Denso Corp 電子装置
WO2014171278A1 (ja) 2013-04-18 2014-10-23 富士電機株式会社 スイッチング素子駆動回路
EP2811648A1 (en) 2013-06-04 2014-12-10 ABB Oy Method and arrangement for controlling semiconductor switch

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689394A (en) * 1995-12-04 1997-11-18 General Electric Company Gate voltage modulation for transistor fault conditions
JP5141049B2 (ja) * 2007-03-07 2013-02-13 トヨタ自動車株式会社 ゲート電圧制御回路及びゲート電圧制御方法
EP2602894B1 (en) * 2011-12-05 2014-04-09 Efore OYJ Circuit, method and system for overload protection

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1023743A (ja) 1996-07-05 1998-01-23 Mitsubishi Electric Corp 半導体素子の駆動回路
US5926012A (en) 1996-09-20 1999-07-20 Fuji Electric Co., Ltd. Gate drive circuit in power converter with condition detection device
CN1588799A (zh) 2004-07-09 2005-03-02 清华大学 逆阻式绝缘栅双极型晶体管的驱动保护电路
JP2006332952A (ja) 2005-05-25 2006-12-07 Denso Corp 負荷駆動装置及び負荷駆動装置の出力調整方法
JP2008289048A (ja) 2007-05-21 2008-11-27 Denso Corp 半導体素子駆動回路
CN101820276A (zh) 2009-02-05 2010-09-01 Abb公司 控制igbt的方法和栅极驱动器
JP2014045598A (ja) 2012-08-28 2014-03-13 Denso Corp 駆動対象スイッチング素子の駆動回路
JP2014150696A (ja) 2013-02-04 2014-08-21 Denso Corp 電子装置
WO2014171278A1 (ja) 2013-04-18 2014-10-23 富士電機株式会社 スイッチング素子駆動回路
US20150372671A1 (en) * 2013-04-18 2015-12-24 Fuji Electric Co., Ltd. Switching element driving circuit
EP2811648A1 (en) 2013-06-04 2014-12-10 ABB Oy Method and arrangement for controlling semiconductor switch

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
1st OA issued Nov. 29, 2016 by the JP Office.
Cited Article:Closed-Loop IGBT Gate Drive Featuring Highly Dynamic di/dt and dv/dt Control.
The 1st office action issued in the counterpart CN application No. 201510049603.5 dated Feb. 24, 2018, by the SIPO.
The extended European search report dated Jun. 20, 2016 by the EP Office.
The Second OA issued by CNIPA dated Sep. 13, 2018.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190363711A1 (en) * 2016-12-21 2019-11-28 Mitsubishi Electric Corporation Gate-drive system
US10680607B2 (en) * 2016-12-21 2020-06-09 Mitsubishi Electric Corporation Gate-drive system
US10637465B2 (en) 2018-07-25 2020-04-28 Fuji Electric Co., Ltd. Driving device and switching device
TWI693779B (zh) * 2018-12-07 2020-05-11 大陸商昂寶電子（上海）有限公司 使用霍爾效應感測器的開關模式功率轉換器及其方法
US11316442B2 (en) 2018-12-07 2022-04-26 On-Bright Electronics (Shanghai) Co., Ltd. Switch-mode power converters using hall effect sensors and methods thereof
US11581819B2 (en) 2018-12-07 2023-02-14 On-Bright Electronics (Shanghai) Co., Ltd. Switch-mode power converters using hall effect sensors and methods thereof
US20230145803A1 (en) * 2020-04-07 2023-05-11 Panasonic Intellectual Property Management Co., Ltd. Control circuit and switch device

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