US10104775B2 - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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Publication number
US10104775B2
US10104775B2 US14/269,585 US201414269585A US10104775B2 US 10104775 B2 US10104775 B2 US 10104775B2 US 201414269585 A US201414269585 A US 201414269585A US 10104775 B2 US10104775 B2 US 10104775B2
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circuit pattern
semiconductor device
ceramic substrate
undercut part
circuit
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US20150092379A1 (en
Inventor
Naoki Yoshimatsu
Masayoshi Shinkai
Taketoshi Shikano
Daisuke Murata
Nobuyoshi Kimoto
Yuji Imoto
Mikio Ishihara
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IMOTO, YUJI, ISHIHARA, MIKIO, KIMOTO, NOBUYOSHI, MURATA, DAISUKE, SHIKANO, TAKETOSHI, SHINKAI, MASAYOSHI, YOSHIMATSU, NAOKI
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0373—Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2072—Anchoring, i.e. one structure gripping into another
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1184—Underetching, e.g. etching of substrate under conductors or etching of conductor under dielectrics; Means for allowing or controlling underetching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1305—Moulding and encapsulation
    • H05K2203/1316—Moulded encapsulation of mounted components
    • Y10T29/41—

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device used for an inverter or a regenerating converter to control a motor of an electric vehicle, an electric railcar, or the like, and a method for manufacturing the same.
  • a conventional semiconductor device includes a ceramic substrate, circuit patterns arranged on the ceramic substrate, a semiconductor element packaged on the circuit pattern, and bonding wires to connect the circuit patterns, or the circuit pattern and the semiconductor element.
  • the semiconductor device is provided with an insulating part in which the ceramic substrate is exposed, in order to insulate the circuit patterns from each other.
  • a size of the ceramic substrate depends on an area of the circuit pattern and a width of the insulating part.
  • the ceramic substrate, the circuit patterns, the semiconductor element, and the bonding wires are sealed with an epoxy resin, for example. Adhesion properties between the ceramic substrate and the circuit pattern, and the epoxy resin are poor, so that resin sealing is performed after a polyimide resin or a polyamide-imide resin having low Young's modulus has been previously applied to the ceramic substrate in order to prevent the epoxy resin from being separated (refer to Japanese Patent Application Laid-Open No. 2006-32617, for example).
  • the conventional semiconductor device is configured as described above, so that in order to miniaturize the ceramic substrate, it is necessary to reduce the area of the circuit pattern or narrow the width of the insulating part, which causes the problem that assemblability and insulating properties are deteriorated.
  • An object of the present invention is to provide a semiconductor device capable of miniaturizing the semiconductor device and improving reliability of it at low cost, and a method for manufacturing the same.
  • a semiconductor device includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element.
  • An undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, and the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate.
  • the undercut part is also filled with the sealing resin.
  • the undercut part is provided in each of the opposed side surfaces of the adjacent circuit patterns, an area of a bottom surface of the circuit pattern can be reduced without reducing an area of the upper surface of the circuit pattern. That is, when the undercut part is provided, it is possible to obtain two effects of miniaturizing the semiconductor device due to improvement in insulating properties and improving reliability of it due to suppression of separation, at the same time.
  • FIG. 1 is a cross-sectional view of a semiconductor device according to a first preferred embodiment
  • FIG. 2 is a partially enlarged view of a cross section of the semiconductor device according to the first preferred embodiment
  • FIG. 3 is a plan view of the semiconductor device according to the first preferred embodiment
  • FIG. 4 is a cross-sectional view of a first variation of the semiconductor device according to the first preferred embodiment
  • FIG. 5 is a cross-sectional view of a second variation of the semiconductor device according to the first preferred embodiment
  • FIG. 6 is a cross-sectional view of a third variation of the semiconductor device according to the first preferred embodiment.
  • FIG. 7 is a cross-sectional view of a fourth variation of the semiconductor device according to the first preferred embodiment.
  • FIG. 8 is a partially enlarged view of a cross section of a semiconductor device according to a second preferred embodiment
  • FIG. 9 is a partially enlarged view of a cross section of a semiconductor device according to a third preferred embodiment.
  • FIG. 10 is a cross-sectional view of a semiconductor device according to a prerequisite art.
  • FIG. 10 is a cross-sectional view of a semiconductor device according to the prerequisite art.
  • a plurality of circuit patterns 1 a are arranged on a surface of a ceramic substrate 1 of the semiconductor device according to the prerequisite art.
  • a semiconductor element 2 is bonded to an upper surface of at least one circuit pattern 1 a with solder 3 so as to be packaged.
  • An electrode of the semiconductor element 2 and the other circuit pattern 1 a are electrically connected with an aluminum wire 5 .
  • the circuit pattern 1 a is bonded to a terminal (not shown) by soldering or welding so as to be electrically connected to an external terminal.
  • a back-surface pattern 1 b is formed on a back surface of the ceramic substrate 1 . The back surface is the surface opposite to the surface on which the circuit patterns 1 a are arranged.
  • a material of the circuit pattern 1 a is aluminum or copper in general.
  • the ceramic substrate 1 , the circuit patterns 1 a , the semiconductor element 2 , and the aluminum wire 5 are sealed with a sealing resin 4 .
  • the sealing resin 4 is an epoxy resin, for example.
  • the back-surface pattern 1 b is not sealed with the sealing resin, but exposed to a lower surface of the semiconductor device.
  • the semiconductor device described above is used, for example, as an inverter or a regenerating converter to control a motor of an electric vehicle, an electric railcar, or the like.
  • the semiconductor device according to the prerequisite art is configured as described above, so that in order to miniaturize the ceramic substrate 1 , it is necessary to reduce an area of the circuit pattern 1 a , or narrow a width of an insulating part between the circuit patterns 1 a , which could deteriorate assemblability and insulating properties.
  • FIG. 1 is a cross-sectional view of a semiconductor device according to this preferred embodiment.
  • FIG. 2 is a partially enlarged view of a cross-section of the semiconductor device in this preferred embodiment. More particularly, FIG. 2 is an enlarged view of a cross section of a side surface of a circuit pattern 1 a in the cross-sectional view in FIG. 1 .
  • FIG. 3 is a plan view of the semiconductor device in this preferred embodiment.
  • the plurality of circuit patterns 1 a are arranged on a surface of a ceramic substrate 1 .
  • a semiconductor element 2 is bonded to an upper surface of at least one circuit pattern 1 a with solder 3 so as to be packaged.
  • an undercut part 1 aa is formed in each of opposed side surfaces of the adjacent circuit patterns 1 a .
  • FIG. 2 shows an enlarged view of the undercut part 1 aa .
  • the undercut part 1 aa is configured such that an end 11 of an upper surface of the circuit pattern 1 a protrudes outside the circuit pattern 1 a more than an end 12 of a lower surface of the circuit pattern 1 a on the ceramic substrate 1 .
  • the undercut part 1 aa is also filled with the sealing resin 4 .
  • the undercut part 1 aa may be formed in a side surface of the circuit pattern 1 a which is not opposed to the other circuit pattern 1 a.
  • the circuit pattern 1 a has recessed parts 1 ad in planar view along an outer periphery of the circuit pattern 1 a .
  • the recessed part 1 ad is sealed with the sealing resin 4 .
  • a hole 1 ae is formed in the upper surface of the circuit pattern 1 a , and the hole 1 ae is also filled with the sealing resin 4 .
  • the undercut part 1 aa is formed in a side surface of the recessed part 1 ad .
  • the undercut part 1 aa may be also formed in a side surface of the hole 1 ae.
  • the semiconductor element 2 in this preferred embodiment is an insulated gate bipolar transistor (IGBT) including a wide bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or the like.
  • IGBT insulated gate bipolar transistor
  • a metal film is formed on the surface of the ceramic substrate 1 .
  • the metal film is formed by attaching metal foil having a thickness of 0.1 mm to 2 mm, for example, to the surface of the ceramic substrate 1 .
  • a back-surface pattern 1 b is formed on a back surface of the ceramic substrate 1 .
  • the metal film is etched, whereby the circuit pattern 1 a is formed.
  • the undercut part 1 aa is formed by over-etching the side surface of the circuit pattern 1 a .
  • the side surface of the circuit pattern 1 a is etched into a round shape, so that the undercut part 1 aa can be formed such that the end 11 of the upper surface of the circuit pattern 1 a protrudes outside more than the end 12 of the lower surface of the circuit pattern 1 a on the ceramic substrate 1 .
  • the semiconductor element 2 is packaged in a predetermined position of the circuit pattern 1 a via the solder 3 .
  • the other circuit pattern 1 a and an electrode of the semiconductor element 2 are connected by wire bonding with an aluminum wire 5 .
  • the ceramic substrate 1 , the circuit patterns 1 a , the semiconductor element 2 , and the aluminum wire 5 are sealed with the sealing resin 4 (such as epoxy resin).
  • the resin sealing is performed by transfer molding, for example.
  • a surface of the back-surface pattern 1 b is not sealed, and exposed to the lower surface of the semiconductor device.
  • the semiconductor element 2 is bonded to the circuit pattern 1 a arranged on the surface of the ceramic substrate 1 , with brazing filler metal such as the solder 3 , and the semiconductor element 2 and the other circuit pattern 1 a are connected with the aluminum wire.
  • the circuit pattern 1 a is wired on the ceramic substrate so as to be electrically connected to an external terminal by soldering and wire bonding.
  • the undercut part 1 aa is provided in each of the opposed side surfaces of the adjacent circuit patterns 1 a .
  • an area of a bottom surface of the circuit pattern 1 a can be reduced without reducing an area of the upper surface of the circuit pattern 1 a . That is, when the area of the bottom surface of the circuit pattern 1 a is reduced, the interval between the adjacent circuit patterns 1 a is increased on the surface of the ceramic substrate 1 , so that the insulating properties are improved.
  • the plurality of circuit patterns 1 a can be arranged closer to each other, compared with the case of the prerequisite art, so that the area of the ceramic substrate 1 on which the circuit patterns 1 a are arranged can be reduced.
  • each component configuring the semiconductor device expands or contracts by an amount provided by multiplying an amount of temperature change and a linear expansion coefficient, due to a change in environmental temperature and heat generation of the semiconductor element. Therefore, distortion is generated in an interface between the components, and especially a part having large distortion or low bonding strength is separated or cracked.
  • the epoxy resin its linear expansion coefficient can be controlled in its manufacturing process, but when the linear expansion coefficient of the epoxy resin is adjusted to that of copper (having linear expansion coefficient of 16.7 ppm/° C.), a difference in linear expansion coefficient between the epoxy resin and ceramics (4 ppm/° C. to 7 ppm/° C.) is increased or decreased.
  • the bonding properties between the epoxy resin, and ceramics, copper, and aluminum are originally poor, so that the resin sealing is to be performed after a resin having low Young's modulus such as polyimide has been previously applied to the bonding interface, otherwise the interface separation is likely to be generated in a cooling/heating cycle.
  • the undercut part 1 aa is provided in the side surface of the circuit pattern 1 a , and the undercut part 1 aa is filled with the sealing resin 4 (epoxy resin).
  • the sealing resin 4 epoxy resin
  • the sealing resin intrudes into the undercut part 1 aa the ceramic substrate 1 and the sealing resin 4 are prevented from being separated from each other.
  • the number of the undercut parts 1 aa into which the sealing resin intrudes is increased in the area of the ceramic substrate 1 , an effect of preventing the separation can be enhanced.
  • FIG. 4 is a cross-sectional view of a first variation of the semiconductor device in this preferred embodiment.
  • a metal base 1 c is integrally bonded to the back surface of the ceramic substrate 1 .
  • its configuration is the same as that of the first preferred embodiment ( FIG. 1 ), so that a description thereof is not given.
  • FIG. 5 is a cross-sectional view of a second variation of the semiconductor device in this preferred embodiment.
  • a heat radiator fin 1 d is integrally bonded to the back surface of the ceramic substrate 1 .
  • its configuration is the same as that of the first preferred embodiment ( FIG. 1 ), so that a description thereof is not given.
  • the heat radiator fin 1 d is bonded to the back surface of the ceramic substrate 1 , instead of the back-surface pattern 1 b , it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
  • FIG. 6 is a cross-sectional view of a third variation of the semiconductor device in this preferred embodiment.
  • the back-surface pattern 1 b is bonded to the heat radiator fin 1 d via the solder 3 .
  • its configuration is the same as that of the first preferred embodiment ( FIG. 1 ), so that a description thereof is not given.
  • Even when the heat radiator fin 1 d is additionally bonded to the back-surface pattern 1 b , on the back surface of the ceramic substrate 1 it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
  • FIG. 7 is a cross-sectional view of a fourth variation of the semiconductor device in this preferred embodiment.
  • the heat radiator fin 1 d is integrally bonded to the back surface of the ceramic substrate 1 .
  • a resin case 7 is fixed on an upper surface side of the heat radiator fin 1 d so as to surround the ceramic substrate 1 , the circuit patterns 1 a , the semiconductor element 2 , and the aluminum wire 5 .
  • the sealing resin 4 (such as an epoxy resin) is injected into the case 7 , and cured, so that the ceramic substrate 1 , the circuit patterns 1 a , the semiconductor element 2 , and the aluminum wire 5 are sealed with the sealing resin 4 .
  • the undercut part 1 aa of the circuit pattern 1 a is also filled with the sealing resin 4 .
  • the semiconductor device includes the case 7 , and the inside of the case 7 is sealed with the sealing resin 4 which has been injected into the case 7 , it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
  • the semiconductor device includes the ceramic substrate 1 , the plurality of circuit patterns 1 a arranged on the surface of the ceramic substrate 1 , the semiconductor element 2 arranged on the upper surface of at least one circuit pattern 1 a , the sealing resin 4 for sealing the ceramic substrate 1 , the plurality of circuit patterns 1 a , and the semiconductor element 2 , in which the undercut part 1 aa is formed in the opposed side surfaces of the circuit patterns 1 a adjacent to one another, the undercut part 1 aa is configured such that the end 11 of the upper surface of the circuit pattern 1 a protrudes outside the circuit pattern 1 a more than the end 12 of the lower surface of the circuit pattern 1 a on the ceramic substrate 1 , and the undercut part 1 aa is also filled with the sealing resin 4 .
  • the undercut part 1 aa when the undercut part 1 aa is provided in opposed side surfaces of the circuit patterns 1 a adjacent to one another, the area of the bottom surface of the circuit pattern 1 a can be reduced without reducing the area of the upper surface of the circuit pattern 1 a .
  • the functionally necessary area of the circuit pattern 1 a can be ensured, and the interval between the circuit patterns 1 a required for their insulation can be ensured. That is, since the interval between the adjacent circuit patterns 1 a can be narrowed without deteriorating the insulating properties, the area of the ceramic substrate 1 on which the circuit patterns 1 a are formed can be reduced. When the area of the ceramic substrate 1 is reduced, the semiconductor device can be miniaturized.
  • the undercut part 1 aa is provided in the side surface of the circuit pattern 1 a , and the undercut part 1 aa is filled with the sealing resin 4 , the adhesion properties between the ceramic substrate 1 and the sealing resin 4 can be improved, so that separation of the sealing resin 4 is suppressed, and as a result, the reliability of the semiconductor device is improved. That is, when the undercut part 1 aa is provided, it is possible to simultaneously obtain the two effects of miniaturizing the semiconductor device due to the improvement in insulating properties and improving the reliability due to suppression of separation.
  • the method for manufacturing the semiconductor device includes (a) a step of forming the metal film on the surface of the ceramic substrate 1 , and (b) a step of forming the circuit pattern 1 a by etching the metal film, and in the step (b), the undercut part 1 aa is formed by over-etching the side surface of the circuit pattern 1 a.
  • the undercut part 1 aa is formed at the same time as the step of forming the circuit pattern 1 a by etching.
  • the undercut part 1 aa can be formed without increasing the number of the manufacturing steps. Since the undercut part 1 aa can be provided without increasing the number of the manufacturing steps, it is possible to obtain the two effects of miniaturizing the semiconductor device due to the improvement in insulating properties, and improving the reliability of the semiconductor device due to the suppression of the separation, without increasing the manufacturing cost.
  • the circuit pattern 1 a has the recessed parts 1 ad in planar view along the outer periphery of the circuit pattern 1 a , and the recessed part 1 ad is also sealed with the sealing resin 4 .
  • the recessed parts 1 ad are formed along the outer periphery of the circuit pattern 1 a , the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased.
  • the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.
  • the hole 1 ae is formed in the upper surface of the circuit pattern 1 a , and the hole 1 ae is also filled with the sealing resin 4 .
  • the hole 1 ae is formed in the upper surface of the circuit pattern 1 a , the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased.
  • the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.
  • the semiconductor element 2 includes the wide bandgap semiconductor.
  • the semiconductor element 2 is configured of the wide bandgap semiconductor such as silicon carbide (SiC), or gallium nitride (GaN).
  • SiC silicon carbide
  • GaN gallium nitride
  • the present invention capable of ensuring the insulating properties without increasing the size of the semiconductor device is especially effective.
  • the high-power semiconductor device operates under high temperature, the present invention capable of improving the reliability of the semiconductor device while suppressing the separation of the sealing resin 4 is especially effective.
  • FIG. 8 is a partially enlarged view of a cross section of a semiconductor device according to this preferred embodiment.
  • an undercut part 1 ab having a shape similar to the undercut part 1 aa ( FIG. 2 ) described in the first preferred embodiment is formed in each of opposed side surfaces of adjacent circuit patterns 1 a .
  • FIG. 8 shows an enlarged view of the undercut part 1 ab.
  • the undercut part 1 ab As shown in FIG. 8 , as for the undercut part 1 ab , an end 11 of an upper surface of the circuit pattern 1 a protrudes outside more than an end 12 of a lower surface of the circuit pattern 1 a on a ceramic substrate 1 .
  • the undercut part 1 ab is also filled with a sealing resin 4 . While the undercut part 1 aa in the first preferred embodiment has the round shape formed by etching, the undercut part 1 ab in this preferred embodiment has a linear shape formed by pressing. Other than that, its configuration is the same as that of the first preferred embodiment, so that a description of the same part is not given.
  • a method for manufacturing the semiconductor device according to this preferred embodiment will be described. Firstly, a metal plate is punched out by pressing, whereby the circuit pattern 1 a is formed. Then, the undercut part 1 ab is formed by pressing a certain position of the end of the lower surface of the circuit pattern 1 a (that is, surface which is in contact with the ceramic substrate 1 ). Then, the circuit pattern 1 a having the undercut part 1 ab is attached to the surface of the ceramic substrate 1 .
  • a step of forming a back-surface pattern 1 b , a step of packaging a semiconductor element 2 , a step of wiring with an aluminum wire 5 , and a step of sealing with the sealing resin 4 are the same as those in the first preferred embodiment, so that description thereof is not given.
  • the method for manufacturing the semiconductor device includes (c) the step of forming the circuit pattern 1 a by punching out the metal plate, (d) the step of forming the undercut part 1 ab by pressing the end of the circuit pattern 1 a after the step (c), and (e) the step of attaching the circuit pattern 1 a to the surface of the ceramic substrate 1 after the step (d).
  • the undercut part 1 ab is not formed in all over the periphery of the circuit pattern 1 a , but the undercut part 1 ab can be formed in a particular position around the circuit pattern 1 a .
  • a degree of freedom for the position in which the undercut part 1 ab is formed is improved.
  • FIG. 9 is a partially enlarged view of a cross-section of a semiconductor device according to this preferred embodiment.
  • an undercut part 1 af having a shape similar to that of the undercut part 1 aa ( FIG. 2 ) described in the first preferred embodiment is formed in each of opposed side surfaces of adjacent circuit patterns 1 a .
  • FIG. 9 shows an enlarged view of the undercut part 1 af.
  • an end 11 of an upper surface of the circuit pattern 1 a protrudes outside more than an end 12 of a lower surface of the circuit pattern 1 a on a ceramic substrate 1 .
  • the undercut part 1 af is also filled with a sealing resin 4 .
  • a groove 1 ac is formed in the upper surface of the circuit pattern 1 a , along the end 11 of the upper surface of the circuit pattern 1 a .
  • a distance between the end 11 and the groove 1 ac in the upper surface of the circuit pattern 1 a is not more than a thickness of the circuit pattern 1 a .
  • the groove 1 ac is also filled with the sealing resin 4 .
  • the configuration is the same as that of the first preferred embodiment, so that a description of the same part is not given.
  • the circuit pattern 1 a is formed on a surface of the ceramic substrate 1 .
  • the circuit pattern 1 a may be formed by etching, or the circuit pattern 1 a may be formed by punching out a metal plate by pressing and attached on the surface of the ceramic substrate 1 .
  • the groove 1 ac is formed by applying a pressure to the upper surface of the circuit pattern 1 a , along the end 11 of the upper surface of the circuit pattern 1 a .
  • a position to which pressure is applied is away from the end 11 of the upper surface of the circuit pattern 1 a by a distance equal to or less than the thickness of the circuit pattern 1 a.
  • the groove 1 ac is formed by applying the pressure to the position away from the end 11 by the distance equal to or less than the thickness of the circuit pattern 1 a , the end 11 of the upper surface of the circuit pattern 1 a is pushed outside, whereby the undercut part 1 af is formed.
  • a step of forming a back-surface pattern 1 b , a step of packaging a semiconductor element 2 , a step of wiring with an aluminum wire 5 , and a step of sealing with the sealing resin 4 are the same as those in the first preferred embodiment, so that a description thereof is not given.
  • the groove 1 ac is also filled with the sealing resin 4 in the sealing step.
  • the groove 1 ac is formed in the upper surface of the circuit pattern 1 a , along the end 11 of the upper surface of the circuit pattern 1 a , the distance between the end 11 and the groove 1 ac of the upper surface of the circuit pattern 1 a is not more than the thickness of the circuit pattern 1 a , and the grove 1 ac is also filled with the sealing resin 4 .
  • the undercut part 1 af is provided in the side surface of the circuit pattern 1 a , the interval between the circuit patterns 1 a can be further narrowed without deteriorating the insulating properties, as described in the first preferred embodiment.
  • the area of the ceramic substrate 1 on which the circuit patterns 1 a are formed can be reduced, and the semiconductor device can be miniaturized.
  • the undercut part 1 af is formed in the side surface of the circuit pattern 1 a , and the undercut part 1 af is filled with the sealing resin 4 , the adhesion properties between the ceramic substrate 1 and the sealing resin 4 is improved, and the separation of the sealing resin 4 is suppressed, so that the reliability of the semiconductor device is improved.
  • the groove 1 ac is formed in the upper surface of the circuit pattern 1 a , the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is further improved.
  • the method for manufacturing the semiconductor device in this preferred embodiment includes (f) the step of forming the circuit pattern 1 a on the upper surface of the ceramic substrate 1 , and (g) the step of forming the groove 1 ac by applying the pressure to the upper surface of the circuit pattern 1 a along the end 11 of the upper surface of the circuit pattern 1 a after the step (f), and in the step (g), the position to which the pressure is applied is away from the end 11 of the upper surface of the circuit pattern 1 a by the distance equal to or less than the thickness of the circuit pattern 1 a , and when the groove 1 ac is formed, the end 11 of the upper surface of the circuit pattern 1 a is pushed outside, whereby the undercut part 1 af is formed.
  • the undercut part 1 af is not formed in all over the periphery of the circuit pattern 1 a , but the undercut part 1 af can be formed in a particular position around the circuit pattern 1 a .
  • the groove 1 ac is formed in the upper surface of the circuit pattern 1 a in order to form the undercut part 1 af , so that the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.

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Abstract

A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.

Description

BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device used for an inverter or a regenerating converter to control a motor of an electric vehicle, an electric railcar, or the like, and a method for manufacturing the same.
Description of the Background Art
A conventional semiconductor device includes a ceramic substrate, circuit patterns arranged on the ceramic substrate, a semiconductor element packaged on the circuit pattern, and bonding wires to connect the circuit patterns, or the circuit pattern and the semiconductor element. The semiconductor device is provided with an insulating part in which the ceramic substrate is exposed, in order to insulate the circuit patterns from each other. A size of the ceramic substrate depends on an area of the circuit pattern and a width of the insulating part.
The ceramic substrate, the circuit patterns, the semiconductor element, and the bonding wires are sealed with an epoxy resin, for example. Adhesion properties between the ceramic substrate and the circuit pattern, and the epoxy resin are poor, so that resin sealing is performed after a polyimide resin or a polyamide-imide resin having low Young's modulus has been previously applied to the ceramic substrate in order to prevent the epoxy resin from being separated (refer to Japanese Patent Application Laid-Open No. 2006-32617, for example).
The conventional semiconductor device is configured as described above, so that in order to miniaturize the ceramic substrate, it is necessary to reduce the area of the circuit pattern or narrow the width of the insulating part, which causes the problem that assemblability and insulating properties are deteriorated.
In addition, in order to suppress separation of the epoxy resin, it is necessary to apply the resin having low Young's modulus, so that a step for the application is needed in a manufacturing process, which increases manufacturing costs. In a case where the resin having low Young's modulus is not applied to reduce the manufacturing costs, adhesion properties of the epoxy resin are deteriorated, and separation is generated. When the epoxy resin is separated, the problem is that a bonding lifetime of a component (such as an aluminum wire or a terminal) held by the epoxy resin is reduced, and the insulating properties are deteriorated between the circuit patterns on the ceramic substrate.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a semiconductor device capable of miniaturizing the semiconductor device and improving reliability of it at low cost, and a method for manufacturing the same.
A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element. An undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, and the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate. In addition, the undercut part is also filled with the sealing resin.
Since the undercut part is provided in each of the opposed side surfaces of the adjacent circuit patterns, an area of a bottom surface of the circuit pattern can be reduced without reducing an area of the upper surface of the circuit pattern. That is, when the undercut part is provided, it is possible to obtain two effects of miniaturizing the semiconductor device due to improvement in insulating properties and improving reliability of it due to suppression of separation, at the same time.
These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view of a semiconductor device according to a first preferred embodiment;
FIG. 2 is a partially enlarged view of a cross section of the semiconductor device according to the first preferred embodiment;
FIG. 3 is a plan view of the semiconductor device according to the first preferred embodiment;
FIG. 4 is a cross-sectional view of a first variation of the semiconductor device according to the first preferred embodiment;
FIG. 5 is a cross-sectional view of a second variation of the semiconductor device according to the first preferred embodiment;
FIG. 6 is a cross-sectional view of a third variation of the semiconductor device according to the first preferred embodiment;
FIG. 7 is a cross-sectional view of a fourth variation of the semiconductor device according to the first preferred embodiment;
FIG. 8 is a partially enlarged view of a cross section of a semiconductor device according to a second preferred embodiment;
FIG. 9 is a partially enlarged view of a cross section of a semiconductor device according to a third preferred embodiment; and
FIG. 10 is a cross-sectional view of a semiconductor device according to a prerequisite art.
 DESCRIPTION OF THE PREFERRED EMBODIMENTS
<Prerequisite Art>
Before preferred embodiments of the present invention are described, a prerequisite art of the present invention will be described. FIG. 10 is a cross-sectional view of a semiconductor device according to the prerequisite art. As shown in FIG. 10, a plurality of circuit patterns 1 a are arranged on a surface of a ceramic substrate 1 of the semiconductor device according to the prerequisite art. A semiconductor element 2 is bonded to an upper surface of at least one circuit pattern 1 a with solder 3 so as to be packaged. An electrode of the semiconductor element 2 and the other circuit pattern 1 a are electrically connected with an aluminum wire 5. In addition, the circuit pattern 1 a is bonded to a terminal (not shown) by soldering or welding so as to be electrically connected to an external terminal. A back-surface pattern 1 b is formed on a back surface of the ceramic substrate 1. The back surface is the surface opposite to the surface on which the circuit patterns 1 a are arranged. Further, a material of the circuit pattern 1 a is aluminum or copper in general.
The ceramic substrate 1, the circuit patterns 1 a, the semiconductor element 2, and the aluminum wire 5 are sealed with a sealing resin 4. The sealing resin 4 is an epoxy resin, for example. In addition, the back-surface pattern 1 b is not sealed with the sealing resin, but exposed to a lower surface of the semiconductor device.
The semiconductor device described above is used, for example, as an inverter or a regenerating converter to control a motor of an electric vehicle, an electric railcar, or the like.
The semiconductor device according to the prerequisite art is configured as described above, so that in order to miniaturize the ceramic substrate 1, it is necessary to reduce an area of the circuit pattern 1 a, or narrow a width of an insulating part between the circuit patterns 1 a, which could deteriorate assemblability and insulating properties.
In addition, since adhesion properties are poor between the sealing resin 4, and the ceramic substrate 1 and the circuit pattern 1 a, there is a problem that separation is generated. When the sealing resin 4 is separated, the problem is that a bonding lifetime of a component (such as the aluminum wire or the terminal) held by the sealing resin 4 is reduced, and the insulating properties are deteriorated between the circuit patterns 1 a on the ceramic substrate 1.
<First Preferred Embodiment>
<Configuration>
FIG. 1 is a cross-sectional view of a semiconductor device according to this preferred embodiment. FIG. 2 is a partially enlarged view of a cross-section of the semiconductor device in this preferred embodiment. More particularly, FIG. 2 is an enlarged view of a cross section of a side surface of a circuit pattern 1 a in the cross-sectional view in FIG. 1. In addition, FIG. 3 is a plan view of the semiconductor device in this preferred embodiment.
According to the semiconductor device in this preferred embodiment, the plurality of circuit patterns 1 a are arranged on a surface of a ceramic substrate 1. A semiconductor element 2 is bonded to an upper surface of at least one circuit pattern 1 a with solder 3 so as to be packaged.
As shown in FIG. 1, an undercut part 1 aa is formed in each of opposed side surfaces of the adjacent circuit patterns 1 a. FIG. 2 shows an enlarged view of the undercut part 1 aa. The undercut part 1 aa is configured such that an end 11 of an upper surface of the circuit pattern 1 a protrudes outside the circuit pattern 1 a more than an end 12 of a lower surface of the circuit pattern 1 a on the ceramic substrate 1. The undercut part 1 aa is also filled with the sealing resin 4. In addition, the undercut part 1 aa may be formed in a side surface of the circuit pattern 1 a which is not opposed to the other circuit pattern 1 a.
A planar shape of the circuit pattern 1 a of the semiconductor device in this preferred embodiment will be described with reference to FIG. 3. The circuit pattern 1 a has recessed parts 1 ad in planar view along an outer periphery of the circuit pattern 1 a. The recessed part 1 ad is sealed with the sealing resin 4. In addition, a hole 1 ae is formed in the upper surface of the circuit pattern 1 a, and the hole 1 ae is also filled with the sealing resin 4. As shown in FIG. 2, the undercut part 1 aa is formed in a side surface of the recessed part 1 ad. In addition, the undercut part 1 aa may be also formed in a side surface of the hole 1 ae.
In addition, the semiconductor element 2 in this preferred embodiment is an insulated gate bipolar transistor (IGBT) including a wide bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or the like.
<Manufacturing Method>
A method for manufacturing the semiconductor device in this preferred embodiment will be described. Firstly, a metal film is formed on the surface of the ceramic substrate 1. The metal film is formed by attaching metal foil having a thickness of 0.1 mm to 2 mm, for example, to the surface of the ceramic substrate 1. In addition, a back-surface pattern 1 b is formed on a back surface of the ceramic substrate 1.
Then, the metal film is etched, whereby the circuit pattern 1 a is formed. At the time of etching, the undercut part 1 aa is formed by over-etching the side surface of the circuit pattern 1 a. By adjusting an etching time, a spraying condition, and the like, the side surface of the circuit pattern 1 a is etched into a round shape, so that the undercut part 1 aa can be formed such that the end 11 of the upper surface of the circuit pattern 1 a protrudes outside more than the end 12 of the lower surface of the circuit pattern 1 a on the ceramic substrate 1.
Then, the semiconductor element 2 is packaged in a predetermined position of the circuit pattern 1 a via the solder 3. In addition, the other circuit pattern 1 a and an electrode of the semiconductor element 2 are connected by wire bonding with an aluminum wire 5.
Further, the ceramic substrate 1, the circuit patterns 1 a, the semiconductor element 2, and the aluminum wire 5 are sealed with the sealing resin 4 (such as epoxy resin). The resin sealing is performed by transfer molding, for example. In addition, a surface of the back-surface pattern 1 b is not sealed, and exposed to the lower surface of the semiconductor device. Through the above processes, the semiconductor device according to this preferred embodiment is manufactured.
<Operation>
As described above, according to the semiconductor device in this preferred embodiment, the semiconductor element 2 is bonded to the circuit pattern 1 a arranged on the surface of the ceramic substrate 1, with brazing filler metal such as the solder 3, and the semiconductor element 2 and the other circuit pattern 1 a are connected with the aluminum wire. The circuit pattern 1 a is wired on the ceramic substrate so as to be electrically connected to an external terminal by soldering and wire bonding.
Thus, in order to reduce an area of the ceramic substrate 1 for miniaturizing the semiconductor device, it is necessary to secure functionally necessary amount of area and width with respect to the circuit patterns 1 a, respectively. Further, a potential difference ranging from several hundred volts to a thousand volts or more is generated between the circuit patterns 1 a during an operation of the semiconductor device in some cases. In order to prevent discharge at an interface between the sealing resin 4 and the ceramic substrate 1, it is necessary to provide a certain interval between the circuit patterns 1 a required for their insulation.
Thus, according to this preferred embodiment, the undercut part 1 aa is provided in each of the opposed side surfaces of the adjacent circuit patterns 1 a. When the undercut part 1 aa is provided, an area of a bottom surface of the circuit pattern 1 a can be reduced without reducing an area of the upper surface of the circuit pattern 1 a. That is, when the area of the bottom surface of the circuit pattern 1 a is reduced, the interval between the adjacent circuit patterns 1 a is increased on the surface of the ceramic substrate 1, so that the insulating properties are improved. Thus, in a case where the semiconductor device is designed so as to have the same degree of insulating properties as those in the prerequisite art not having the undercut part 1 aa, the plurality of circuit patterns 1 a can be arranged closer to each other, compared with the case of the prerequisite art, so that the area of the ceramic substrate 1 on which the circuit patterns 1 a are arranged can be reduced.
Furthermore, in general, as for the semiconductor device, each component configuring the semiconductor device expands or contracts by an amount provided by multiplying an amount of temperature change and a linear expansion coefficient, due to a change in environmental temperature and heat generation of the semiconductor element. Therefore, distortion is generated in an interface between the components, and especially a part having large distortion or low bonding strength is separated or cracked. As for the epoxy resin, its linear expansion coefficient can be controlled in its manufacturing process, but when the linear expansion coefficient of the epoxy resin is adjusted to that of copper (having linear expansion coefficient of 16.7 ppm/° C.), a difference in linear expansion coefficient between the epoxy resin and ceramics (4 ppm/° C. to 7 ppm/° C.) is increased or decreased. Furthermore, the bonding properties between the epoxy resin, and ceramics, copper, and aluminum are originally poor, so that the resin sealing is to be performed after a resin having low Young's modulus such as polyimide has been previously applied to the bonding interface, otherwise the interface separation is likely to be generated in a cooling/heating cycle.
Thus, according to the semiconductor device in this preferred embodiment, the undercut part 1 aa is provided in the side surface of the circuit pattern 1 a, and the undercut part 1 aa is filled with the sealing resin 4 (epoxy resin). When the sealing resin intrudes into the undercut part 1 aa, the ceramic substrate 1 and the sealing resin 4 are prevented from being separated from each other. As the number of the undercut parts 1 aa into which the sealing resin intrudes is increased in the area of the ceramic substrate 1, an effect of preventing the separation can be enhanced. When the adhesion properties between the ceramic substrate 1 and the sealing resin 4 are improved, intrusion of water and ions from outside is suppressed, so that reliability of each of the semiconductor element 2, and the bonding part of the aluminum wire 5 is improved, and as a result, reliability of the semiconductor device is improved.
<First Variation>
FIG. 4 is a cross-sectional view of a first variation of the semiconductor device in this preferred embodiment. According to this variation, a metal base 1 c is integrally bonded to the back surface of the ceramic substrate 1. Other than that, its configuration is the same as that of the first preferred embodiment (FIG. 1), so that a description thereof is not given. Even when the metal base 1 c is bonded to the back surface of the ceramic substrate 1, instead of the back-surface pattern 1 b, it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
<Second Variation>
FIG. 5 is a cross-sectional view of a second variation of the semiconductor device in this preferred embodiment. According to this variation, a heat radiator fin 1 d is integrally bonded to the back surface of the ceramic substrate 1. Other than that, its configuration is the same as that of the first preferred embodiment (FIG. 1), so that a description thereof is not given. Even when the heat radiator fin 1 d is bonded to the back surface of the ceramic substrate 1, instead of the back-surface pattern 1 b, it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
<Third Variation>
FIG. 6 is a cross-sectional view of a third variation of the semiconductor device in this preferred embodiment. According to this variation, the back-surface pattern 1 b is bonded to the heat radiator fin 1 d via the solder 3. Other than that, its configuration is the same as that of the first preferred embodiment (FIG. 1), so that a description thereof is not given. Even when the heat radiator fin 1 d is additionally bonded to the back-surface pattern 1 b, on the back surface of the ceramic substrate 1, it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
<Fourth Variation>
FIG. 7 is a cross-sectional view of a fourth variation of the semiconductor device in this preferred embodiment. According to this variation, the heat radiator fin 1 d is integrally bonded to the back surface of the ceramic substrate 1. In addition, a resin case 7 is fixed on an upper surface side of the heat radiator fin 1 d so as to surround the ceramic substrate 1, the circuit patterns 1 a, the semiconductor element 2, and the aluminum wire 5.
The sealing resin 4 (such as an epoxy resin) is injected into the case 7, and cured, so that the ceramic substrate 1, the circuit patterns 1 a, the semiconductor element 2, and the aluminum wire 5 are sealed with the sealing resin 4. The undercut part 1 aa of the circuit pattern 1 a is also filled with the sealing resin 4.
Other than that, its configuration is the same as that of the first preferred embodiment (FIG. 1), so that a description thereof is not given. Even in the case where the semiconductor device includes the case 7, and the inside of the case 7 is sealed with the sealing resin 4 which has been injected into the case 7, it is possible to obtain the above-described effects of reducing the area of the ceramic substrate 1 and improving the reliability of the semiconductor device.
<Effect>
The semiconductor device according to this preferred embodiment includes the ceramic substrate 1, the plurality of circuit patterns 1 a arranged on the surface of the ceramic substrate 1, the semiconductor element 2 arranged on the upper surface of at least one circuit pattern 1 a, the sealing resin 4 for sealing the ceramic substrate 1, the plurality of circuit patterns 1 a, and the semiconductor element 2, in which the undercut part 1 aa is formed in the opposed side surfaces of the circuit patterns 1 a adjacent to one another, the undercut part 1 aa is configured such that the end 11 of the upper surface of the circuit pattern 1 a protrudes outside the circuit pattern 1 a more than the end 12 of the lower surface of the circuit pattern 1 a on the ceramic substrate 1, and the undercut part 1 aa is also filled with the sealing resin 4.
Therefore, when the undercut part 1 aa is provided in opposed side surfaces of the circuit patterns 1 a adjacent to one another, the area of the bottom surface of the circuit pattern 1 a can be reduced without reducing the area of the upper surface of the circuit pattern 1 a. Thus, the functionally necessary area of the circuit pattern 1 a can be ensured, and the interval between the circuit patterns 1 a required for their insulation can be ensured. That is, since the interval between the adjacent circuit patterns 1 a can be narrowed without deteriorating the insulating properties, the area of the ceramic substrate 1 on which the circuit patterns 1 a are formed can be reduced. When the area of the ceramic substrate 1 is reduced, the semiconductor device can be miniaturized.
In addition, when the undercut part 1 aa is provided in the side surface of the circuit pattern 1 a, and the undercut part 1 aa is filled with the sealing resin 4, the adhesion properties between the ceramic substrate 1 and the sealing resin 4 can be improved, so that separation of the sealing resin 4 is suppressed, and as a result, the reliability of the semiconductor device is improved. That is, when the undercut part 1 aa is provided, it is possible to simultaneously obtain the two effects of miniaturizing the semiconductor device due to the improvement in insulating properties and improving the reliability due to suppression of separation.
Furthermore, the method for manufacturing the semiconductor device according to this preferred embodiment includes (a) a step of forming the metal film on the surface of the ceramic substrate 1, and (b) a step of forming the circuit pattern 1 a by etching the metal film, and in the step (b), the undercut part 1 aa is formed by over-etching the side surface of the circuit pattern 1 a.
Therefore, according to this preferred embodiment, the undercut part 1 aa is formed at the same time as the step of forming the circuit pattern 1 a by etching. As a result, the undercut part 1 aa can be formed without increasing the number of the manufacturing steps. Since the undercut part 1 aa can be provided without increasing the number of the manufacturing steps, it is possible to obtain the two effects of miniaturizing the semiconductor device due to the improvement in insulating properties, and improving the reliability of the semiconductor device due to the suppression of the separation, without increasing the manufacturing cost.
Furthermore, according to the semiconductor device in this preferred embodiment, the circuit pattern 1 a has the recessed parts 1 ad in planar view along the outer periphery of the circuit pattern 1 a, and the recessed part 1 ad is also sealed with the sealing resin 4.
Therefore, when the recessed parts 1 ad are formed along the outer periphery of the circuit pattern 1 a, the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.
In addition, according to the semiconductor device in this preferred embodiment, the hole 1 ae is formed in the upper surface of the circuit pattern 1 a, and the hole 1 ae is also filled with the sealing resin 4.
Therefore, since the hole 1 ae is formed in the upper surface of the circuit pattern 1 a, the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.
In addition, according to the semiconductor device in this preferred embodiment, the semiconductor element 2 includes the wide bandgap semiconductor.
Therefore, according to this preferred embodiment, the semiconductor element 2 is configured of the wide bandgap semiconductor such as silicon carbide (SiC), or gallium nitride (GaN). For example, since the SiC semiconductor element is applied to a high-power semiconductor device capable of performing high-speed switching operation under high temperature, the present invention capable of ensuring the insulating properties without increasing the size of the semiconductor device is especially effective. In addition, since the high-power semiconductor device operates under high temperature, the present invention capable of improving the reliability of the semiconductor device while suppressing the separation of the sealing resin 4 is especially effective.
<Second Preferred Embodiment>
<Configuration>
FIG. 8 is a partially enlarged view of a cross section of a semiconductor device according to this preferred embodiment. According to the semiconductor device in this preferred embodiment, an undercut part 1 ab having a shape similar to the undercut part 1 aa (FIG. 2) described in the first preferred embodiment is formed in each of opposed side surfaces of adjacent circuit patterns 1 a. FIG. 8 shows an enlarged view of the undercut part 1 ab.
As shown in FIG. 8, as for the undercut part 1 ab, an end 11 of an upper surface of the circuit pattern 1 a protrudes outside more than an end 12 of a lower surface of the circuit pattern 1 a on a ceramic substrate 1. The undercut part 1 ab is also filled with a sealing resin 4. While the undercut part 1 aa in the first preferred embodiment has the round shape formed by etching, the undercut part 1 ab in this preferred embodiment has a linear shape formed by pressing. Other than that, its configuration is the same as that of the first preferred embodiment, so that a description of the same part is not given.
<Manufacturing Method>
A method for manufacturing the semiconductor device according to this preferred embodiment will be described. Firstly, a metal plate is punched out by pressing, whereby the circuit pattern 1 a is formed. Then, the undercut part 1 ab is formed by pressing a certain position of the end of the lower surface of the circuit pattern 1 a (that is, surface which is in contact with the ceramic substrate 1). Then, the circuit pattern 1 a having the undercut part 1 ab is attached to the surface of the ceramic substrate 1.
A step of forming a back-surface pattern 1 b, a step of packaging a semiconductor element 2, a step of wiring with an aluminum wire 5, and a step of sealing with the sealing resin 4 are the same as those in the first preferred embodiment, so that description thereof is not given.
<Effect>
The method for manufacturing the semiconductor device according to this preferred embodiment includes (c) the step of forming the circuit pattern 1 a by punching out the metal plate, (d) the step of forming the undercut part 1 ab by pressing the end of the circuit pattern 1 a after the step (c), and (e) the step of attaching the circuit pattern 1 a to the surface of the ceramic substrate 1 after the step (d).
Therefore, since a position to be pressed can be selected, the undercut part 1 ab is not formed in all over the periphery of the circuit pattern 1 a, but the undercut part 1 ab can be formed in a particular position around the circuit pattern 1 a. Thus, in addition to the effect described in the first preferred embodiment, a degree of freedom for the position in which the undercut part 1 ab is formed is improved.
<Third Preferred Embodiment>
<Configuration>
FIG. 9 is a partially enlarged view of a cross-section of a semiconductor device according to this preferred embodiment. According to the semiconductor device in this preferred embodiment, an undercut part 1 af having a shape similar to that of the undercut part 1 aa (FIG. 2) described in the first preferred embodiment is formed in each of opposed side surfaces of adjacent circuit patterns 1 a. FIG. 9 shows an enlarged view of the undercut part 1 af.
As shown in FIG. 9, as for the undercut part 1 af, an end 11 of an upper surface of the circuit pattern 1 a protrudes outside more than an end 12 of a lower surface of the circuit pattern 1 a on a ceramic substrate 1. The undercut part 1 af is also filled with a sealing resin 4.
In addition, a groove 1 ac is formed in the upper surface of the circuit pattern 1 a, along the end 11 of the upper surface of the circuit pattern 1 a. A distance between the end 11 and the groove 1 ac in the upper surface of the circuit pattern 1 a is not more than a thickness of the circuit pattern 1 a. In addition, the groove 1 ac is also filled with the sealing resin 4. Other than that, the configuration is the same as that of the first preferred embodiment, so that a description of the same part is not given.
<Manufacturing Method>
A method for manufacturing the semiconductor device according to this preferred embodiment will be described. Firstly, the circuit pattern 1 a is formed on a surface of the ceramic substrate 1. The circuit pattern 1 a may be formed by etching, or the circuit pattern 1 a may be formed by punching out a metal plate by pressing and attached on the surface of the ceramic substrate 1.
Then, the groove 1 ac is formed by applying a pressure to the upper surface of the circuit pattern 1 a, along the end 11 of the upper surface of the circuit pattern 1 a. Here, a position to which pressure is applied is away from the end 11 of the upper surface of the circuit pattern 1 a by a distance equal to or less than the thickness of the circuit pattern 1 a.
When the groove 1 ac is formed by applying the pressure to the position away from the end 11 by the distance equal to or less than the thickness of the circuit pattern 1 a, the end 11 of the upper surface of the circuit pattern 1 a is pushed outside, whereby the undercut part 1 af is formed.
A step of forming a back-surface pattern 1 b, a step of packaging a semiconductor element 2, a step of wiring with an aluminum wire 5, and a step of sealing with the sealing resin 4 are the same as those in the first preferred embodiment, so that a description thereof is not given. In addition, the groove 1 ac is also filled with the sealing resin 4 in the sealing step.
<Effect>
According to the semiconductor device in this preferred embodiment, the groove 1 ac is formed in the upper surface of the circuit pattern 1 a, along the end 11 of the upper surface of the circuit pattern 1 a, the distance between the end 11 and the groove 1 ac of the upper surface of the circuit pattern 1 a is not more than the thickness of the circuit pattern 1 a, and the grove 1 ac is also filled with the sealing resin 4.
Therefore, when the undercut part 1 af is provided in the side surface of the circuit pattern 1 a, the interval between the circuit patterns 1 a can be further narrowed without deteriorating the insulating properties, as described in the first preferred embodiment. Thus, the area of the ceramic substrate 1 on which the circuit patterns 1 a are formed can be reduced, and the semiconductor device can be miniaturized.
In addition, since the undercut part 1 af is formed in the side surface of the circuit pattern 1 a, and the undercut part 1 af is filled with the sealing resin 4, the adhesion properties between the ceramic substrate 1 and the sealing resin 4 is improved, and the separation of the sealing resin 4 is suppressed, so that the reliability of the semiconductor device is improved. In addition, according to this preferred embodiment, since the groove 1 ac is formed in the upper surface of the circuit pattern 1 a, the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is further improved.
In addition, the method for manufacturing the semiconductor device in this preferred embodiment includes (f) the step of forming the circuit pattern 1 a on the upper surface of the ceramic substrate 1, and (g) the step of forming the groove 1 ac by applying the pressure to the upper surface of the circuit pattern 1 a along the end 11 of the upper surface of the circuit pattern 1 a after the step (f), and in the step (g), the position to which the pressure is applied is away from the end 11 of the upper surface of the circuit pattern 1 a by the distance equal to or less than the thickness of the circuit pattern 1 a, and when the groove 1 ac is formed, the end 11 of the upper surface of the circuit pattern 1 a is pushed outside, whereby the undercut part 1 af is formed.
Therefore, since the position where the groove 1 ac is formed can be selected, the undercut part 1 af is not formed in all over the periphery of the circuit pattern 1 a, but the undercut part 1 af can be formed in a particular position around the circuit pattern 1 a. Further, the groove 1 ac is formed in the upper surface of the circuit pattern 1 a in order to form the undercut part 1 af, so that the area of the circuit pattern 1 a which is in contact with the sealing resin 4 is increased. When the contact area is increased, the adhesion properties between the circuit pattern 1 a and the sealing resin 4 are improved, so that the reliability of the semiconductor device is improved.
While the invention has been shown and described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is therefore understood that numerous modifications and variations can be devised without departing from the scope of the invention.

Claims (13)

What is claimed is:
1. A semiconductor device comprising:
a ceramic substrate;
a plurality of circuit patterns arranged on an upper surface of said ceramic substrate;
a semiconductor element arranged on an upper surface of at least one of said circuit patterns; and
a sealing resin for sealing said ceramic substrate, said plurality of circuit patterns, and said semiconductor element, wherein
an undercut part is formed in opposed side surfaces of said circuit patterns adjacent to one another,
said undercut part is configured in such a manner that an end of an upper surface of said circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of said circuit pattern on said ceramic substrate,
said undercut part is also filled with said sealing resin,
said sealing resin covers and is in direct contact with top and side surfaces of said ceramic substrate, said plurality of circuit patterns and said semiconductor element,
said undercut part extends from said end of said upper surface of said circuit pattern to said end of said lower surface of said circuit pattern, and said undercut part consists of an upper linear portion and a lower linear portion when said undercut part is viewed in a side cross-sectional view, wherein said upper and lower linear portions meet at an angle, and said angle is greater than 0° and less than 180°.
2. A method for manufacturing the semiconductor device according to claim 1, comprising the steps of:
(a) forming said circuit pattern by punching out a metal plate;
(b) forming said undercut part by pressing an end of said circuit pattern after said step (a); and
(c) attaching said circuit patterns to the surface of said ceramic substrate after said step (b).
3. The semiconductor device according to claim 1, wherein
a groove is formed in the upper surface of said circuit pattern along the end of the upper surface of the circuit pattern,
a distance between the end and said groove in the upper surface of said circuit pattern is equal to or less than a thickness of the circuit pattern, and
said groove is also filled with said sealing resin.
4. A method for manufacturing the semiconductor device according to claim 3, comprising the steps of:
(a) forming said circuit patterns on the surface of said ceramic substrate; and
(b) forming said groove by applying a pressure to the upper surface of the circuit pattern along the end of the upper surface of said circuit pattern after said step (a), wherein
in said step (b), a position to which the pressure is applied is away from the end of the upper surface of said circuit pattern by a distance equal to or less than the thickness of the circuit pattern, and
when said groove is formed, the end of the upper surface of said circuit pattern is pushed outside, and said undercut part is formed.
5. The semiconductor device according to claim 1, wherein
said circuit pattern has recessed parts formed continuously along an outer periphery of the circuit pattern in planar view, and the recessed parts are also sealed with said sealing resin.
6. The semiconductor device according to claim 1, wherein
a hole is formed in the upper surface of said circuit pattern, and the hole is also filled with said sealing resin.
7. The semiconductor device according to claim 1, wherein said semiconductor element includes a wide bandgap semiconductor.
8. The semiconductor device according to claim 1, wherein said upper and lower linear portions form a shape that protrudes into the sealing resin when said undercut part is viewed in a side cross-sectional view.
9. The semiconductor device according to claim 1, wherein said upper and lower linear portions form a shape that is recessed into each of said opposed side surfaces of said circuit patterns when said undercut part is viewed in a side cross-sectional view.
10. A semiconductor device comprising:
a ceramic substrate;
a plurality of circuit patterns arranged on an upper surface of said ceramic substrate;
a semiconductor element arranged on an upper surface of at least one of said circuit patterns; and
a sealing resin for sealing said ceramic substrate, said plurality of circuit patterns, and said semiconductor element, wherein
an undercut part is formed in opposed side surfaces of said circuit patterns adjacent to one another,
said undercut part is configured in such a manner that an end of an upper surface of said circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of said circuit pattern on said ceramic substrate,
said undercut part is also filled with said sealing resin,
said sealing resin covers and is in direct contact with top and side surfaces of said ceramic substrate, said plurality of circuit patterns and said semiconductor element, and
said undercut part extends from said end of said upper surface of said circuit pattern to said end of said lower surface of said circuit pattern, and said undercut part consists of a continuously curved portion when said undercut part is viewed in a side cross-sectional view,
wherein a portion of said continuously curved portion between said end of said upper surface of said circuit pattern and said end of said lower surface of said circuit pattern is provided closer to a center of said circuit pattern than either said end of said upper surface of said circuit pattern or said end of said lower surface of said circuit pattern,
said circuit pattern has recessed parts formed continuously along an outer periphery of the circuit pattern in planar view, and the recessed parts are also sealed with said sealing resin,
each of said recessed parts is defined by a first portion of said circuit pattern protruding from said outer periphery of said circuit pattern and a second portion recessed into said outer periphery of said circuit pattern in said planar view, and
said recessed parts form a repeating, uniform pattern along said outer periphery of said circuit pattern in said planar view.
11. A method for manufacturing the semiconductor device according to claim 10, comprising the steps of:
(a) forming a metal film on the surface of said ceramic substrate; and
(b) forming said circuit patterns by etching said metal film, wherein
in said step (b), said undercut part is formed by over-etching the side surfaces of said circuit patterns.
12. The semiconductor device according to claim 10, wherein
a hole is formed in the upper surface of said circuit pattern, and the hole is also filled with said sealing resin.
13. The semiconductor device according to claim 10, wherein said semiconductor element includes a wide bandgap semiconductor.
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