UA27013C2 - Сциhтиляційhий матеріал hа осhові йодиду цезію та спосіб його одержаhhя - Google Patents
Сциhтиляційhий матеріал hа осhові йодиду цезію та спосіб його одержаhhяInfo
- Publication number
- UA27013C2 UA27013C2 UA96051870A UA96051870A UA27013C2 UA 27013 C2 UA27013 C2 UA 27013C2 UA 96051870 A UA96051870 A UA 96051870A UA 96051870 A UA96051870 A UA 96051870A UA 27013 C2 UA27013 C2 UA 27013C2
- Authority
- UA
- Ukraine
- Prior art keywords
- ground
- scinllation
- ist
- deriving
- cesium iodide
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Radiation (AREA)
- Luminescent Compositions (AREA)
Abstract
Винахід відноситься до області вирощування активованих монокристалів. Матеріал на основі йодиду цезію, активованого талієм містить додаткову домішку. Як додаткової домішки він містить Mex(CO2)у, де Me - катіонна домішка; 1≤X≤2; 1≤Y≤5.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UA96051870A UA27013C2 (uk) | 1996-05-14 | 1996-05-14 | Сциhтиляційhий матеріал hа осhові йодиду цезію та спосіб його одержаhhя |
RU97102064A RU2138585C1 (ru) | 1996-05-14 | 1997-02-11 | Сцинтилляционный материал на основе йодида цезия и способ его получения |
US08/854,410 US5876630A (en) | 1996-05-14 | 1997-05-12 | Scintillation material on the base of cesium iodide and method for its preparation |
CN97112901A CN1065288C (zh) | 1996-05-14 | 1997-05-14 | 基于碘化铯的闪烁材料及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UA96051870A UA27013C2 (uk) | 1996-05-14 | 1996-05-14 | Сциhтиляційhий матеріал hа осhові йодиду цезію та спосіб його одержаhhя |
Publications (1)
Publication Number | Publication Date |
---|---|
UA27013C2 true UA27013C2 (uk) | 2000-02-28 |
Family
ID=21689122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UA96051870A UA27013C2 (uk) | 1996-05-14 | 1996-05-14 | Сциhтиляційhий матеріал hа осhові йодиду цезію та спосіб його одержаhhя |
Country Status (4)
Country | Link |
---|---|
US (1) | US5876630A (uk) |
CN (1) | CN1065288C (uk) |
RU (1) | RU2138585C1 (uk) |
UA (1) | UA27013C2 (uk) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005527826A (ja) * | 2002-05-29 | 2005-09-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | CsI:Tl変換層を有するX線検出器 |
US7759645B1 (en) | 2004-06-09 | 2010-07-20 | Charles Brecher | Scintillation materials with reduced afterglow and method of preparation |
US7180068B1 (en) * | 2004-06-09 | 2007-02-20 | Radiation Monitoring Devices, Inc. | Scintillation materials with reduced afterglow and method of preparation |
DE102005034915B4 (de) * | 2005-07-26 | 2012-06-21 | Siemens Ag | Strahlungswandler und Verfahren zur Herstellung des Strahlungswandlers |
ES2292327B1 (es) * | 2005-12-26 | 2009-04-01 | Consejo Superior Investigaciones Cientificas | Mini camara gamma autonoma y con sistema de localizacion, para uso intraquirurgico. |
CN102725658B (zh) * | 2010-01-28 | 2014-09-03 | 佳能株式会社 | 闪烁体结晶体、其制造方法和放射线检测器 |
JP5121960B2 (ja) * | 2011-03-30 | 2013-01-16 | キヤノン株式会社 | 相分離構造を有するシンチレータ結晶体 |
US9091768B2 (en) * | 2011-06-06 | 2015-07-28 | Canon Kabushiki Kaisha | Scintillator material and radiation detector using same |
CN103344984B (zh) * | 2013-07-03 | 2015-06-10 | 梁栌伊 | 一种x射线辐射探测器用闪烁屏结构 |
CN111172590A (zh) * | 2020-02-18 | 2020-05-19 | 北京圣通和晶科技有限公司 | 一种提拉法生长大尺寸碘化铯晶体的工艺 |
CN112429753A (zh) * | 2020-12-31 | 2021-03-02 | 江西赣锋锂业股份有限公司 | 一种碳酸铯制备高纯碘化铯的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4030965A (en) * | 1976-06-09 | 1977-06-21 | The Harshaw Chemical Company | Crystal growth procedure |
US4341654A (en) * | 1978-08-07 | 1982-07-27 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot |
US4277303A (en) * | 1978-08-07 | 1981-07-07 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot and method for growing the ingot |
JPS62156191A (ja) * | 1985-12-28 | 1987-07-11 | Konishiroku Photo Ind Co Ltd | アルカリハライド螢光体 |
RU1471546C (ru) * | 1987-03-11 | 1993-01-07 | Предприятие П/Я Р-6496 | Способ получени сцинтилл тора на основе иодида цези |
US5178719A (en) * | 1991-08-20 | 1993-01-12 | Horiba Instruments, Inc. | Continuous refill crystal growth method |
DE4439127A1 (de) * | 1994-11-02 | 1996-05-09 | Siemens Ag | Verfahren zur Reinigung kristalliner Stoffe |
-
1996
- 1996-05-14 UA UA96051870A patent/UA27013C2/uk unknown
-
1997
- 1997-02-11 RU RU97102064A patent/RU2138585C1/ru active
- 1997-05-12 US US08/854,410 patent/US5876630A/en not_active Expired - Fee Related
- 1997-05-14 CN CN97112901A patent/CN1065288C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5876630A (en) | 1999-03-02 |
CN1065288C (zh) | 2001-05-02 |
CN1172175A (zh) | 1998-02-04 |
RU2138585C1 (ru) | 1999-09-27 |
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