CN103344984B - 一种x射线辐射探测器用闪烁屏结构 - Google Patents
一种x射线辐射探测器用闪烁屏结构 Download PDFInfo
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Abstract
本发明涉及一种X射线辐射探测器用闪烁屏结构，包括硅衬底；在所述硅衬底上通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；并且在所述碘化铯厚膜上沉积有透明阻水膜，所述透明阻水膜的可见光透过率≥90%，水蒸气透过率≤0.01g?m-2?day-1。本发明所述的X射线辐射探测器用闪烁屏结构，不但所述的闪烁屏结构致密、成分均匀、与衬底的粘结性良好，而且所述的封装结构具有优异的阻水防水性能。
Description
技术领域
本发明属于X射线探测器的技术领域，更具体地说，本发明涉及一种X射线辐射探测器用闪烁屏结构。
背景技术
自从X光被伦琴发现以来，随着研究的升入，它的用途也越来越广泛，从最初的X光感光照片到后来的X光光电探测器件，从航空航天到高能物理，从军事到医疗再到安检设备，从生产到生活再到科学研究、宇宙探寻，这种射线越来越显示出它独有的魅力。
无机闪烁体在X射线辐射探测中起着非常重要的作用，广泛应用于影像核医学、核物理、高能物理、CT以及安检等领域。目前研究和应用最多的无机闪烁体为CsI:Tl，这是因为其不但光产额高而且辐照强度高，易于光电管进行光谱匹配，且机械性能优良，生产成本相对较低。但是碘化铯材料为吸湿性材料，当其吸收空气中的水分而潮解时，会使得闪烁体的特性，特别是图像分辨率大大降低，因此，如何有效的封装闪烁体更尤为重要。而现有技术中X射线闪烁屏的封装工艺效率较低，而且效果不佳。
发明内容
为了克服现有技术中存在的上述技术问题，本发明的目的在于提供一种X射线辐射探测器用闪烁屏结构。本发明所述的X射线辐射探测器用闪烁屏结构，不但所述的闪烁屏结构致密、成分均匀、与衬底的粘结性良好，而且所述的封装结构具有优异的阻水防水性能。
为了达到上述目的，本发明涉及一种X射线辐射探测器用闪烁屏结构。
本发明所述的X射线辐射探测器用闪烁屏结构，包括硅衬底；其特征在于在所述硅衬底上通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；并且在所述碘化铯厚膜上沉积有透明阻水膜，所述透明阻水膜的可见光透过率≥90%，水蒸气透过率≤0.01g•m-2•day-1。
其中，在所述硅衬底上还沉积有二氧化硅过渡层。通过施加所述过渡层不仅可以提高对可见光的反射率，而且还显著提高了碘化铯杂化膜与衬底的附着性。
其中，所述二氧化硅过渡层通过磁控溅射工艺沉积得到，所述磁控溅射工艺的条件如下：靶材为二氧化硅；溅射气体为O2和Ar，O2和Ar的体积比为1：5；溅射功率密度为300-500 W，溅射气体的压强为3-5×10-3 Torr，硅衬底温度为80-100℃，沉积厚度为100-200 nm。
其中，所述激光蒸镀的工艺如下：将99wt%的CsI晶体粉末、0.95-0.98wt%的TaI晶体粉末和0.02-0.05wt%的三氧化二硼将其混合均匀后压制成薄片作为靶材；然后采用Nd:YAG激光器，所述Nd:YAG激光器的激光脉冲功率功率为107 W/cm2，频率为2000Hz，脉冲宽度为100ns，扫描速度为5-10 cm/s,基片与靶材之间的距离为70-72.5 cm，沉积温度为350-380℃，沉积的碘化铯杂化膜的厚度为0.1-1mm。申请人发现，通过激光蒸镀的方法不仅可以得到掺杂的厚膜，而且其中掺杂的碘化铊和三氧化二硼的不均匀性不超过8%，而采用钨丝加热蒸镀法不均匀性会高达20%以上。
其中，所述透明阻水膜为SiON膜，其是以SiH4、NH3、N2O和H2为原料气体，采用PECVD方法沉积得到，其中SiH4的流速为200-300 sccm、NH3的流速为100-200 sccm、N2O的流速为300-500 sccm、H2的流速为2000-3000 sccm，射频频率为13.56MHZ，射频功率为100-120W，工作压强为1.5-2.5 torr，沉积温度为200-250℃，膜厚为1.5-10 μm。所述透明阻水膜对可见光的透过率≥92%，其在38℃以及相对湿度为90%的条件下，水蒸气透过率≤0.01g•m-2•day-1。
与现有技术相比，本发明的技术方案具有以下有益效果：
本发明所述的X射线辐射探测器用闪烁屏结构，碘化铯杂化膜采用激光蒸镀工艺制备，其不但结构致密、而且掺杂的碘化铊和三氧化二硼的不均匀性不超过8%，而且利用PECVD法沉积的SiON膜具有优异的阻水防水性能和透光性，透明阻水膜对可见光的透过率≥92%，其在38℃以及相对湿度为90%的条件下，水蒸气透过率≤0.01g•m-2•day-1。另外，通过在硅衬底上通过低温磁控溅射沉积二氧化硅薄膜，不仅可以提高对可见光的反射率，而且还显著提高了碘化铯杂化膜与衬底的附着性。
具体实施方式
实施例
1
本实施例所述的X射线辐射探测器用闪烁屏结构，衬底为多晶硅；在所述多晶硅衬底上通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；并且在所述碘化铯厚膜上沉积有透明阻水膜。所述激光蒸镀的工艺如下：将99wt%的CsI晶体粉末、0.98wt%的TaI晶体粉末和0.02wt%的B2O3将其混合均匀后压制成薄片作为靶材；然后采用Nd:YAG激光器，所述Nd:YAG激光器的激光脉冲功率功率为107 W/cm2，频率为2000Hz，脉冲宽度为100ns，扫描速度为5-10 cm/s,基片与靶材之间的距离为72.5 cm，沉积温度为350℃，沉积的碘化铯杂化膜的厚度为0.5mm，其中掺杂的TaI和B2O3的不均匀性不超过5%。其中，所述透明阻水膜为SiON膜，其是以SiH4、NH3、N2O和H2为原料气体，采用PECVD方法沉积得到，其中SiH4的流速为250 sccm、NH3的流速为120 sccm、N2O的流速为400 sccm、H2的流速为3000 sccm，射频频率为13.56MHZ，射频功率为120W，工作压强为2.1 torr，沉积温度为200℃，膜厚为5 μm。所述透明阻水膜对可见光的透过率≥92%，其在38℃以及相对湿度为90%的条件下，水蒸气透过率≤0.01g•m-2•day-1。
实施例
2
本实施例所述的X射线辐射探测器用闪烁屏结构，衬底为多晶硅；在所述多晶硅衬底上首先沉积二氧化硅过渡层，所述二氧化硅过渡层通过磁控溅射工艺沉积得到，所述磁控溅射工艺的条件如下：靶材为二氧化硅；溅射气体为O2和Ar，O2和Ar的体积比为1：5；溅射功率密度为500 W，溅射气体的压强为5×10-3 Torr，硅衬底温度为80℃，沉积厚度为200 nm。然后通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；并且在所述碘化铯厚膜上沉积有透明阻水膜。所述激光蒸镀的工艺如下：将99wt%的CsI晶体粉末、0.98wt%的TaI晶体粉末和0.02wt%的B2O3将其混合均匀后压制成薄片作为靶材；然后采用Nd:YAG激光器，所述Nd:YAG激光器的激光脉冲功率功率为107 W/cm2，频率为2000Hz，脉冲宽度为100ns，扫描速度为5-10 cm/s,基片与靶材之间的距离为72.5 cm，沉积温度为350℃，沉积的碘化铯杂化膜的厚度为0.5mm，其中掺杂的TaI和B2O3的不均匀性不超过5%。其中，所述透明阻水膜为SiON膜，其是以SiH4、NH3、N2O和H2为原料气体，采用PECVD方法沉积得到，其中SiH4的流速为250 sccm、NH3的流速为120 sccm、N2O的流速为400 sccm、H2的流速为3000 sccm，射频频率为13.56MHZ，射频功率为120W，工作压强为2.1 torr，沉积温度为200℃，膜厚为5 μm。所述透明阻水膜对可见光的透过率≥92%，其在38℃以及相对湿度为90%的条件下，水蒸气透过率≤0.01g•m-2•day-1。
实施例
3
本实施例所述的X射线辐射探测器用闪烁屏结构，衬底为多晶硅；在所述多晶硅衬底上首先沉积二氧化硅过渡层，所述二氧化硅过渡层通过磁控溅射工艺沉积得到，所述磁控溅射工艺的条件如下：靶材为二氧化硅；溅射气体为O2和Ar，O2和Ar的体积比为1：5；溅射功率密度为300 W，溅射气体的压强为3×10-3 Torr，硅衬底温度为100℃，沉积厚度为100 nm。然后通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；所述激光蒸镀的工艺如下：将99wt%的CsI晶体粉末、0.95wt%的TaI晶体粉末和0.05wt%的B2O3将其混合均匀后压制成薄片作为靶材；然后采用Nd:YAG激光器，所述Nd:YAG激光器的激光脉冲功率功率为107 W/cm2，频率为2000Hz，脉冲宽度为100ns，扫描速度为5-10 cm/s,基片与靶材之间的距离为70 cm，沉积温度为380℃，沉积的碘化铯杂化膜的厚度为0.5mm，其中掺杂的TaI和B2O3的不均匀性不超过8%。最后在所述碘化铯厚膜上沉积有SiON膜。其中，所述SiON膜是以SiH4、NH3、N2O和H2为原料气体，采用PECVD方法沉积得到，其中SiH4的流速为200
sccm、NH3的流速为120 sccm、N2O的流速为400 sccm、H2的流速为3000 sccm，射频频率为13.56MHZ，射频功率为120W，工作压强为2.0 torr，沉积温度为200℃，膜厚为5 μm。所述透明阻水膜对可见光的透过率≥90%，其在38℃以及相对湿度为90%的条件下，水蒸气透过率≤0.01g•m-2•day-1。
对于本领域的普通技术人员而言，应当理解可以在不脱离本发明公开的范围以内，可以采用等同替换或等效变换形式实施上述实施例。本发明的保护范围并不限于具体实施方式部分的具体实施例，只要没有脱离发明实质的实施方式，均应理解为落在了本发明要求的保护范围之内。
Claims (2)
1.一种X射线辐射探测器用闪烁屏结构，包括硅衬底；其特征在于：在所述硅衬底上通过激光蒸镀工艺沉积碘化铯杂化膜，所述碘化铯杂化膜为掺杂铊和硼的碘化铯厚膜；并且在所述碘化铯厚膜上沉积有透明阻水膜，所述透明阻水膜为SiON膜；所述激光蒸镀的工艺如下：将99wt％的CsI晶体粉末、0.95-0.98wt％的TaI晶体粉末和0.02-0.05wt％的三氧化二硼混合均匀后压制成薄片作为靶材；采用Nd:YAG激光器，所述Nd:YAG激光器的激光脉冲功率为107W/cm2，频率为2000Hz，脉冲宽度为100ns，扫描速度为5-10cm/s，基片与靶材之间的距离为70-72.5cm，沉积温度为350-380℃，沉积的碘化铯杂化膜的厚度为0.1-1mm；所述SiON膜是以SiH4、NH3、N2O和H2为原料气体，采用PECVD方法沉积得到，其中SiH4的流速为200-300sccm、NH3的流速为100-200sccm、N2O的流速为300-500sccm、H2的流速为2000-3000sccm，射频频率为13.56MHZ，射频功率为100-120W，工作压强为1.5-2.5torr，沉积温度为200-250℃，膜厚为5-10μm，所述透明阻水膜对可见光的透过率≥92％，其在38℃以及相对湿度为90％的条件下，水蒸气透过率≤0.01g·m-2·day-1。
2.根据权利要求1所述的X射线辐射探测器用闪烁屏结构，其特征在于在所述硅衬底上还沉积有厚度为100-200nm的二氧化硅过渡层，所述二氧化硅过渡层通过磁控溅射工艺沉积得到，所述磁控溅射工艺的条件如下：靶材为二氧化硅；溅射气体为O2和Ar，O2和Ar的体积比为1：5；溅射功率密度为300-500W，溅射气体的压强为3×10-3-5×10-3Torr，硅衬底温度为80-100℃。
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| CN105463379B (zh) * | 2015-11-25 | 2018-05-15 | 电子科技大学 | CsI:Tl闪烁薄膜直接集成可见光探测器的方法 |
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| JP4569529B2 (ja) * | 2006-06-29 | 2010-10-27 | コニカミノルタエムジー株式会社 | 放射線用シンチレータプレートとその製造方法 |
| CN102292822A (zh) * | 2009-01-27 | 2011-12-21 | 株式会社爱发科 | 太阳能电池以及制造太阳能电池的方法 |
| CN102800632B (zh) * | 2011-05-25 | 2014-07-23 | 中国科学院微电子研究所 | 一种电荷俘获非挥发存储器的制造方法 |
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| CN1172175A (zh) * | 1996-05-14 | 1998-02-04 | 阿姆克里斯有限公司 | 基于碘化铯的闪烁材料及其制备方法 |
| EP1065523A2 (en) * | 1999-07-02 | 2001-01-03 | Agfa-Gevaert naamloze vennootschap | Radiation image read-out method and apparatus |
| CN102305937A (zh) * | 2011-05-25 | 2012-01-04 | 上海奕瑞光电子科技有限公司 | 闪烁体封装结构 |
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