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Application filed by Інститут Напівпровідників Ан Урср, Институт Полупроводников Ан УссрfiledCriticalІнститут Напівпровідників Ан Урср
Priority to UA4781408ApriorityCriticalpatent/UA13359A/en
Publication of UA13359ApublicationCriticalpatent/UA13359A/en
The stabilization method of active semiconductor layer-electroluminescence film DPD structures based on ZnS includes electrical bias of output structure characteristics to stable state by means of active action on structure. The action is made by gamma-ray irradiation of the structure by dose of 104-105 rads.
UA4781408A1989-11-041989-11-04Stabilization method for electroluminescence dpd structures
UA13359A
(en)