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Application filed by Херсонський Індустріальний Інститут, Херсонский Индустриальный ИнститутfiledCriticalХерсонський Індустріальний Інститут
Priority to UA94076189ApriorityCriticalpatent/UA12589A/en
Publication of UA12589ApublicationCriticalpatent/UA12589A/en
The invention relates to the preparation of inorganic glass. A process for production of films of semiconducting oxide glass is carried out by means of sputtering of aerosol solution on the heated substrate, containing the components of semiconducting oxide glass, application of alcohol iodine solution and irradiation with laser beam. Before the laser treatment the substrate with composition is submerged into liquid nitrogen.
UA94076189A1994-07-121994-07-12Process for production of film of semiconducting oxide glass
UA12589A
(en)
Forming method for polycrystalline silicon, thin film transistor containing the polycrystalline silicon and manufacturing method thereof, and the liquid crystal display containing the thin film transistor