Інститут Проблем Матеріалознавства Ім. І.М. Францевича Ан України
Институт проблем материаловедения им. И.М. Францевича АН Украины
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The masking plate comprises a translucent substrate layer with a masking layer placed on its surface where a drawing is formed. With the purpose of improvement of masking plate quality due to resolution enhancement and improvement of spectral characteristics the masking layer is arranged of higher praseodymium or terbium oxides ((Pr6O11) or (Tb4O7)).
Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate and method for making a field effect transistor