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Application filed by Науково-Дослідний Інститут "Сатурн", научно-исследовательский инстиутт "Сатурн"filedCriticalНауково-Дослідний Інститут "Сатурн"
Priority to UA4436152ApriorityCriticalpatent/UA11361A1/en
Publication of UA11361A1publicationCriticalpatent/UA11361A1/en
Testing Of Individual Semiconductor Devices
(AREA)
Abstract
The invention relates to measurements. Determination is carried out through feeding to input of one of series of amplifiers of noise signals being measured, with noise temperature of environment To directly and with noise temperature T lower or higher than To directly or through measured section and measuring ratio Mo of power levels of noise signal at input of amplifier at frequency of measurement of noise temperature of series of amplifiers at feeding directly to input of amplifier of noise signals with noise temperature T and To.
UA4436152A1988-06-031988-06-03Method for measurement of decay
UA11361A1
(en)