TWM653706U - Preheating ring and semiconductor heating equipment - Google Patents
Preheating ring and semiconductor heating equipment Download PDFInfo
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- TWM653706U TWM653706U TW112213710U TW112213710U TWM653706U TW M653706 U TWM653706 U TW M653706U TW 112213710 U TW112213710 U TW 112213710U TW 112213710 U TW112213710 U TW 112213710U TW M653706 U TWM653706 U TW M653706U
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000002347 injection Methods 0.000 claims abstract description 21
- 239000007924 injection Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000010926 purge Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 13
- 239000010408 film Substances 0.000 description 5
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 208000037805 labour Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
本新型提供一種預熱環和半導體加熱設備,所述預熱環包括:環體,所述環體包括內邊緣及外邊緣;所述環體還包括第一方向、第二方向,所述第一方向為沿著所述氣體注入口和所述氣體排出口延伸的方向,第二方向為垂直於第一方向的方向;所述預熱環還包括突出部,所述突出部設置於環體的外邊緣的在第二方向上的至少一側。本新型提供的預熱環可以降低吹掃氣體上湧對第二路工藝氣體的影響,從而提高薄膜沉積的均勻性。The present invention provides a preheating ring and a semiconductor heating device, the preheating ring comprising: a ring body, the ring body comprising an inner edge and an outer edge; the ring body further comprising a first direction and a second direction, the first direction being a direction extending along the gas injection port and the gas discharge port, and the second direction being a direction perpendicular to the first direction; the preheating ring further comprising a protrusion, the protrusion being arranged on at least one side of the outer edge of the ring body in the second direction. The preheating ring provided by the present invention can reduce the influence of the purge gas surge on the second process gas, thereby improving the uniformity of film deposition.
Description
本新型涉及半導體設備技術領域,特別涉及一種預熱環和半導體加熱設備。The invention relates to the technical field of semiconductor equipment, and in particular to a preheating ring and a semiconductor heating device.
在半導體晶片製造業中,加熱設備是在矽晶圓上形成薄膜的主要設備,常見的加熱設備有CVD、磊晶設備等。待沉積的氣態分子被提供給加熱設備,通過化學反應在晶圓上形成該材料的薄膜。這種形成的薄膜可以為多晶的、非晶的或磊晶的。通常,這些工藝是在高溫下進行的,以加速化學反應並產生高品質的薄膜。一些工藝,例如磊晶矽沉積,工藝溫度在1200℃上下。In the semiconductor chip manufacturing industry, heating equipment is the main equipment for forming thin films on silicon wafers. Common heating equipment includes CVD, epitaxial equipment, etc. The gaseous molecules to be deposited are provided to the heating equipment, and a thin film of the material is formed on the wafer through chemical reaction. The formed film can be polycrystalline, amorphous or epitaxial. Usually, these processes are carried out at high temperatures to accelerate chemical reactions and produce high-quality films. Some processes, such as epitaxial silicon deposition, have a process temperature of around 1200°C.
在磊晶設備中,為了保證晶圓上生成薄膜的均勻性,需要旋轉基座,使溫度更加平均,不僅如此,還要在基座的四周設置環形的預熱環,幫助第一路工藝氣體在基座的四周的熱分佈更加均勻,同時在第一路工藝氣體的垂直方向通入第二路工藝氣體,補償基座旋轉帶來的流場的擾動。但是基座和預熱環之間具有間隙,基座下方的吹掃氣體會從間隙上湧至基座的四周,從而擾亂工藝氣體,這在通入第二路工藝氣體的地方尤其明顯,氣流的擾亂嚴重影響到了薄膜最終的沉積品質。In epitaxial equipment, in order to ensure the uniformity of thin film generation on the wafer, the susceptor needs to be rotated to make the temperature more uniform. In addition, an annular preheating ring is set around the susceptor to help the first process gas to distribute heat more evenly around the susceptor. At the same time, the second process gas is introduced in the vertical direction of the first process gas to compensate for the disturbance of the flow field caused by the rotation of the susceptor. However, there is a gap between the susceptor and the preheating ring. The purge gas under the susceptor will surge from the gap to the surroundings of the susceptor, thereby disturbing the process gas. This is particularly obvious where the second process gas is introduced. The disturbance of the airflow seriously affects the final deposition quality of the film.
本新型的目的是提供一種預熱環和半導體加熱設備,能夠提高薄膜沉積的均勻性。The purpose of the present invention is to provide a preheating ring and a semiconductor heating device that can improve the uniformity of thin film deposition.
為了達到上述目的,本新型提供一種預熱環,用於半導體加熱設備,所述半導體加熱設備包括:反應腔、基座、預熱環、氣體注入口及氣體排出口;所述基座設置於所述反應腔內,用於支撐晶圓;所述預熱環圍繞所述基座設置;所述氣體注入口設置於反應腔一側,用於通入第一路工藝氣體;氣體排出口設置於所述氣體注入口的相對側,用於排出第一路工藝氣體,所述預熱環包括: 環體,所述環體包括內邊緣及外邊緣; 所述環體還包括第一方向、第二方向,所述第一方向為沿著所述氣體注入口和所述氣體排出口延伸的方向,第二方向為垂直於第一方向的方向; 所述預熱環還包括突出部,所述突出部設置於環體的外邊緣的在第二方向上的至少一側。 In order to achieve the above-mentioned purpose, the present invention provides a preheating ring for semiconductor heating equipment, the semiconductor heating equipment comprising: a reaction chamber, a base, a preheating ring, a gas injection port and a gas exhaust port; the base is arranged in the reaction chamber for supporting the wafer; the preheating ring is arranged around the base; the gas injection port is arranged on one side of the reaction chamber for introducing a first process gas; the gas exhaust port is arranged on the opposite side of the gas injection port for exhausting the first process gas, the preheating ring comprises: a ring body, the ring body comprises an inner edge and an outer edge; the ring body also comprises a first direction and a second direction, the first direction is a direction extending along the gas injection port and the gas exhaust port, and the second direction is a direction perpendicular to the first direction; The preheating ring further includes a protrusion, which is arranged on at least one side of the outer edge of the ring body in the second direction.
可選的,所述突出部設置於環體的外邊緣的在第二方向上的兩側。Optionally, the protrusions are arranged on both sides of the outer edge of the ring in the second direction.
可選的,所述內邊緣為圓形。Optionally, the inner edge is circular.
可選的,所述外邊緣為圓形。Optionally, the outer edge is circular.
可選的,所述內邊緣為橢圓形,所述內邊緣的橢圓形的長軸沿著第一方向延伸。Optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the first direction.
可選的,所述外邊緣為橢圓形,所述外邊緣的橢圓形的長軸沿著第一方向延伸。Optionally, the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the first direction.
可選的,所述內邊緣為橢圓形,所述內邊緣的橢圓形的長軸沿著第二方向延伸。Optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the second direction.
可選的,所述外邊緣為橢圓形,所述外邊緣的橢圓形的長軸沿著第二方向延伸。Optionally, the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the second direction.
可選的,所述突出部的輪廓為圓弧形或多邊形。Optionally, the outline of the protrusion is arc-shaped or polygonal.
可選的,突出部佔據預熱環的所述外邊緣的1/4至1/3。Optionally, the protrusion occupies 1/4 to 1/3 of the outer edge of the preheating ring.
可選的,所述預熱環的材質為碳化矽、塗覆碳化矽的石墨中的任一種。Optionally, the material of the preheating ring is any one of silicon carbide and graphite coated with silicon carbide.
本新型還提供一種半導體加熱設備,包括: 反應腔、基座、預熱環、氣體注入口及氣體排出口; 所述基座設置於所述反應腔內,用於支撐晶圓; 所述預熱環為上述的預熱環,且圍繞所述基座設置; 所述氣體注入口設置於反應腔一側,用於通入第一路工藝氣體; 所述氣體排出口設置於所述氣體注入口的相對側,用於排出第一路工藝氣體。 The present invention also provides a semiconductor heating device, comprising: A reaction chamber, a base, a preheating ring, a gas injection port and a gas exhaust port; The base is arranged in the reaction chamber for supporting the wafer; The preheating ring is the above-mentioned preheating ring and is arranged around the base; The gas injection port is arranged on one side of the reaction chamber for introducing a first process gas; The gas exhaust port is arranged on the opposite side of the gas injection port for exhausting the first process gas.
可選的,還包括從第二方向通入的第二路工藝氣體。Optionally, the method further comprises a second process gas introduced from a second direction.
與現有技術相比,本新型的有益效果在於: 1)本新型通過在預熱環上設置突出部,可以很好的抑制吹掃氣體從間隙處上湧,影響第二路工藝氣體,從而實現良好的薄膜沉積品質; 2)本新型通過將預熱環的內邊緣和外邊緣均設置成橢圓形,更好地減小了需要抑制處的間隙。 Compared with the prior art, the beneficial effects of the present invention are: 1) By providing a protrusion on the preheating ring, the present invention can effectively suppress the surging of the purge gas from the gap and affect the second process gas, thereby achieving good film deposition quality; 2) By setting the inner and outer edges of the preheating ring into an elliptical shape, the present invention can better reduce the gap that needs to be suppressed.
下面將結合本新型實施例中的圖式,對本新型實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本新型一部分實施例,而不是全部的實施例。基於本新型中的實施例,本領域具有通常知識者在沒有做出進步性勞動前提下所獲得的所有其他實施例,都屬於本新型保護的範圍。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by the ordinary knowledgeable person in the field without making progressive labor are within the scope of protection of the present invention.
需要說明的是,在本文中,術語「包括」、「包含」、「具有」或者其任何其他變體意在涵蓋非排他性的包含,從而使得包括一系列要素的過程、方法、物品或者終端設備不僅包括那些要素,而且還包括沒有明確列出的其他要素,或者是還包括為這種過程、方法、物品或者終端設備所固有的要素。在沒有更多限制的情況下,由語句「包括……」或「包含……」限定的要素,並不排除在包括所述要素的過程、方法、物品或者終端設備中還存在另外的要素。It should be noted that, in this article, the terms "include", "comprising", "having" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of more restrictions, the elements defined by the phrase "include..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.
需說明的是,圖式均採用非常簡化的形式且均使用非精准的比率,僅用以方便、明晰地輔助說明本新型實施例的目的。It should be noted that the drawings are all in very simplified form and use non-precise ratios, which are only used to conveniently and clearly assist in explaining the purpose of the present invention.
圖1是本新型的半導體加熱設備的橫截面示意圖,所述半導體加熱設備可以是磊晶設備、CVD設備。FIG1 is a schematic cross-sectional view of a novel semiconductor heating device, which may be an epitaxial device or a CVD device.
如圖1所示,所述半導體加熱設備包括反應腔,所述反應腔內設置有用於承載晶圓104的基座105;反應腔的頂部以及底部均設置有加熱組件101、測溫儀102。所述反應腔包括上內襯100、下內襯112、上穹頂116、下穹頂108、側壁、上法蘭103和下法蘭107,所述上內襯100、下內襯112均為石英製成的環體,分別設置在上穹頂116、下穹頂108內側;所述上內襯100設置在下內襯112之上,並在上、下內襯的側方開設有供第一路工藝氣體114通過的氣體注入口113和與氣體注入口113相對的氣體排出口106,所述上穹頂116與上法蘭103連接,通過上法蘭103將上穹頂116固定在側壁之上;下穹頂108與下法蘭107連接,通過下法蘭107將下穹頂108固定在側壁下方。上穹頂116、下穹頂108為石英製成,所述各加熱組件101發射的紅外光穿透上穹頂116、下穹頂108進入反應腔內以熱輻射方式提供加熱能量。所述基座105下方設有旋轉支撐軸109、支撐支架110和銷111,所述旋轉支撐軸109用於支撐基座105旋轉和升降,所述支撐支架110用於在旋轉支撐軸109下降時支撐所述銷111,從而在傳輸晶圓104時將晶圓104與基座105分離。所述測溫儀102設置在反應腔的頂部和底部,用於監控晶圓104頂部和底部溫度。所述基座105四周還設置有預熱環200,用於對進入反應腔內的第一路工藝氣體114預熱。As shown in FIG1 , the semiconductor heating device comprises a reaction chamber, in which a base 105 for carrying a wafer 104 is arranged; a heating assembly 101 and a temperature measuring instrument 102 are arranged at the top and bottom of the reaction chamber. The reaction chamber comprises an upper inner liner 100, a lower inner liner 112, an upper dome 116, a lower dome 108, a side wall, an upper flange 103 and a lower flange 107. The upper inner liner 100 and the lower inner liner 112 are both rings made of quartz, and are arranged on the inner side of the upper dome 116 and the lower dome 108 respectively; the upper inner liner 100 is arranged on the lower inner liner 112, and on the sides of the upper and lower inner liners. A gas injection port 113 for the first process gas 114 to pass through and a gas exhaust port 106 opposite to the gas injection port 113 are provided, the upper dome 116 is connected to the upper flange 103, and the upper dome 116 is fixed on the side wall through the upper flange 103; the lower dome 108 is connected to the lower flange 107, and the lower dome 108 is fixed below the side wall through the lower flange 107. The upper dome 116 and the lower dome 108 are made of quartz, and the infrared light emitted by each heating assembly 101 penetrates the upper dome 116 and the lower dome 108 into the reaction chamber to provide heating energy in the form of thermal radiation. A rotating support shaft 109, a support bracket 110 and a pin 111 are provided below the base 105. The rotating support shaft 109 is used to support the base 105 to rotate and rise and fall, and the support bracket 110 is used to support the pin 111 when the rotating support shaft 109 descends, so as to separate the wafer 104 from the base 105 when the wafer 104 is transported. The temperature measuring instrument 102 is provided at the top and bottom of the reaction chamber to monitor the temperature of the top and bottom of the wafer 104. A preheating ring 200 is also provided around the base 105 to preheat the first process gas 114 entering the reaction chamber.
圖2為本實施例預熱環200的俯視圖。所述預熱環200包括: 環體201,所述環體201包括內邊緣2011及外邊緣2013; 所述環體201還包括第一方向、第二方向,所述第一方向為沿著所述氣體注入口113和所述氣體排出口106延伸的方向,第二方向為垂直於第一方向的方向;第一方向即圖2中y方向,第二方向即圖2中的x方向。由圖2可以看出:第一路工藝氣體G1在第一方向(即y方向)由氣體注入口113注入晶圓104上表面,從氣體排出口106排出;為了補償基座旋轉帶來的氣流擾動,晶圓104表面從第二方向(即x方向)還通入了第二路工藝氣體G2。 FIG2 is a top view of the preheating ring 200 of this embodiment. The preheating ring 200 includes: A ring 201, wherein the ring 201 includes an inner edge 2011 and an outer edge 2013; The ring 201 also includes a first direction and a second direction, wherein the first direction is a direction extending along the gas injection port 113 and the gas exhaust port 106, and the second direction is a direction perpendicular to the first direction; the first direction is the y direction in FIG2, and the second direction is the x direction in FIG2. It can be seen from FIG2 that the first process gas G1 is injected into the upper surface of the wafer 104 from the gas injection port 113 in the first direction (i.e., the y direction) and discharged from the gas exhaust port 106; in order to compensate for the airflow disturbance caused by the rotation of the base, the second process gas G2 is also introduced into the surface of the wafer 104 from the second direction (i.e., the x direction).
所述預熱環200還包括突出部203,所述突出部203設置於環體的外邊緣2013的第二方向的至少一側。突出部203在熱膨脹時提供不宜變形特性,因此預熱環200在突出部203所在位置的間隙D(所述間隙D為基座105和預熱環200之間的間隙)相比於預熱環四周其他位置處的間隙D會減小,因此突出部203所在位置處吹掃氣體上湧減少,吹掃氣體上湧對第二路工藝氣體G2影響減小。The preheating ring 200 further includes a protrusion 203, which is disposed on at least one side of the outer edge 2013 of the ring in the second direction. The protrusion 203 provides a non-deformable characteristic during thermal expansion, so the gap D (the gap D is the gap between the base 105 and the preheating ring 200) of the preheating ring 200 at the location of the protrusion 203 is reduced compared to the gap D at other locations around the preheating ring, so the purge gas surge at the location of the protrusion 203 is reduced, and the impact of the purge gas surge on the second process gas G2 is reduced.
當然可選的,所述突出部203設置於環體的外邊緣的在第二方向上的兩側,如圖3所示。這樣由於突出部203在熱膨脹時提供不宜變形特性,因此,在工藝時加熱會讓預熱環變成橢圓形,在第二方向上的間隙D小於在第一方向上的間隙D,因此吹掃氣體上湧傾向於發生在預熱環第一方向上的兩側,緩解了對第二路工藝氣體G2的影響。Of course, the protrusion 203 is optionally provided on both sides of the outer edge of the ring in the second direction, as shown in FIG3. In this way, since the protrusion 203 provides a non-deformable characteristic during thermal expansion, heating during the process will make the preheating ring become elliptical, and the gap D in the second direction is smaller than the gap D in the first direction, so the surge of the purge gas tends to occur on both sides of the preheating ring in the first direction, alleviating the impact on the second process gas G2.
可選的,所述內邊緣為圓形,所述外邊緣為圓形。Optionally, the inner edge is circular and the outer edge is circular.
為了進一步減小在第二方向上的間隙D,所述內邊緣2011為橢圓形,所述內邊緣的橢圓形的長軸沿著第一方向延伸。所述外邊緣2013為橢圓形,所述外邊緣的橢圓形的長軸沿著第一方向延伸。In order to further reduce the gap D in the second direction, the inner edge 2011 is elliptical, and the long axis of the ellipse of the inner edge extends along the first direction. The outer edge 2013 is elliptical, and the long axis of the ellipse of the outer edge extends along the first direction.
當然,根據需要,可選的,所述內邊緣為橢圓形,所述內邊緣2011的橢圓形的長軸沿著第二方向延伸。所述外邊緣2013為橢圓形,所述外邊緣的橢圓形的長軸沿著第二方向延伸。Of course, as required, optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge 2011 extends along the second direction. The outer edge 2013 is elliptical, and the major axis of the ellipse of the outer edge extends along the second direction.
可選的,所述突出部的輪廓為圓弧形或多邊形,如圖4所示,輪廓為多邊形。Optionally, the outline of the protrusion is arc-shaped or polygonal. As shown in FIG. 4 , the outline is a polygon.
可選的,突出部203佔據預熱環的所述外邊緣的1/4至1/3。Optionally, the protrusion 203 occupies 1/4 to 1/3 of the outer edge of the preheating ring.
可選的,所述預熱環200的材質為碳化矽、塗覆碳化矽的石墨中的任一種。Optionally, the material of the preheating ring 200 is any one of silicon carbide and graphite coated with silicon carbide.
本新型提供的預熱環可以降低吹掃氣體上湧對第二路工藝氣體的影響,從而提高薄膜沉積的均勻性。The preheating ring provided by the novel device can reduce the influence of the purge gas surge on the second process gas, thereby improving the uniformity of film deposition.
以上所述,僅為本新型的具體實施方式,但本新型的保護範圍並不局限於此,任何熟悉本技術領域的技術人員在本新型揭露的技術範圍內,可輕易想到各種等效的修改或替換,這些修改或替換都應涵蓋在本新型的保護範圍之內。因此,本新型的保護範圍應以申請專利範圍的保護範圍為准。The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or substitutions within the technical scope disclosed by the present invention, and these modifications or substitutions should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the patent application.
100:上內襯 101:加熱組件 102:測溫儀 103:上法蘭 104:晶圓 105:基座 106:氣體排出口 107:下法蘭 108:下穹頂 109:旋轉支撐軸 110:支撐支架 111:銷 112:下內襯 113:氣體注入口 116:上穹頂 200:預熱環 201:環體 2011:內邊緣 2013:外邊緣 203:突出部 D:間隙 114、G1:第一路工藝氣體 G2:第二路工藝氣體 100: Upper liner 101: Heating assembly 102: Thermostat 103: Upper flange 104: Wafer 105: Base 106: Gas outlet 107: Lower flange 108: Lower dome 109: Rotary support shaft 110: Support bracket 111: Pin 112: Lower liner 113: Gas injection port 116: Upper dome 200: Preheating ring 201: Ring body 2011: Inner edge 2013: Outer edge 203: Protrusion D: Gap 114, G1: First process gas G2: Second process gas
為了更清楚地說明本新型技術方案,下面將對描述中所需要使用的圖式作簡單地介紹,顯而易見地,下面描述中的圖式是本新型的一個實施例,對於本領域具有通常知識者來講,在不付出進步性勞動的前提下,還可以根據這些圖式獲得其他的圖式: 圖1為本新型的半導體加熱設備的剖面示意圖; 圖2為本新型的預熱環的示意圖; 圖3為本新型的又一預熱環的示意圖; 圖4為本新型的又一預熱環的示意圖。 In order to more clearly explain the technical solution of the present invention, the following will briefly introduce the figures required for the description. Obviously, the figures described below are an embodiment of the present invention. For those with ordinary knowledge in this field, other figures can be obtained based on these figures without making any progressive efforts: Figure 1 is a cross-sectional schematic diagram of the semiconductor heating device of the present invention; Figure 2 is a schematic diagram of the preheating ring of the present invention; Figure 3 is a schematic diagram of another preheating ring of the present invention; Figure 4 is a schematic diagram of another preheating ring of the present invention.
104:晶圓 104: Wafer
106:氣體排出口 106: Gas exhaust port
113:氣體注入口 113: Gas injection port
200:預熱環 200: Preheating ring
201:環體 201: Ring
2011:內邊緣 2011:Inner Edge
2013:外邊緣 2013: Outer Edge
203:突出部 203: Protrusion
D:間隙 D: Gap
G1:第一路工藝氣體 G1: First process gas
G2:第二路工藝氣體 G2: Second process gas
Claims (13)
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CN2022234466599 | 2022-12-22 | ||
CN202223446659.9U CN219449871U (en) | 2022-12-22 | 2022-12-22 | Preheating ring and semiconductor heating equipment |
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TWM653706U true TWM653706U (en) | 2024-04-01 |
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TW112213710U TWM653706U (en) | 2022-12-22 | 2023-12-15 | Preheating ring and semiconductor heating equipment |
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TW (1) | TWM653706U (en) |
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- 2022-12-22 CN CN202223446659.9U patent/CN219449871U/en active Active
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