TWM653706U - Preheating rings and semiconductor heating devices - Google Patents

Abstract

The present invention provides a preheating ring and a semiconductor heating device, the preheating ring comprising: a ring body, the ring body comprising an inner edge and an outer edge; the ring body further comprising a first direction and a second direction, the first direction being a direction extending along the gas injection port and the gas discharge port, and the second direction being a direction perpendicular to the first direction; the preheating ring further comprising a protrusion, the protrusion being arranged on at least one side of the outer edge of the ring body in the second direction. The preheating ring provided by the present invention can reduce the influence of the purge gas surge on the second process gas, thereby improving the uniformity of film deposition.

Description

Preheating rings and semiconductor heating equipment

The invention relates to the technical field of semiconductor equipment, and in particular to a preheating ring and a semiconductor heating device.

In the semiconductor chip manufacturing industry, heating equipment is the main equipment for forming thin films on silicon wafers. Common heating equipment includes CVD, epitaxial equipment, etc. The gaseous molecules to be deposited are provided to the heating equipment, and a thin film of the material is formed on the wafer through chemical reaction. The formed film can be polycrystalline, amorphous or epitaxial. Usually, these processes are carried out at high temperatures to accelerate chemical reactions and produce high-quality films. Some processes, such as epitaxial silicon deposition, have a process temperature of around 1200°C.

In epitaxial equipment, in order to ensure the uniformity of thin film generation on the wafer, the susceptor needs to be rotated to make the temperature more uniform. In addition, an annular preheating ring is set around the susceptor to help the first process gas to distribute heat more evenly around the susceptor. At the same time, the second process gas is introduced in the vertical direction of the first process gas to compensate for the disturbance of the flow field caused by the rotation of the susceptor. However, there is a gap between the susceptor and the preheating ring. The purge gas under the susceptor will surge from the gap to the surroundings of the susceptor, thereby disturbing the process gas. This is particularly obvious where the second process gas is introduced. The disturbance of the airflow seriously affects the final deposition quality of the film.

The purpose of the present invention is to provide a preheating ring and a semiconductor heating device that can improve the uniformity of thin film deposition.

In order to achieve the above-mentioned purpose, the present invention provides a preheating ring for semiconductor heating equipment, the semiconductor heating equipment comprising: a reaction chamber, a base, a preheating ring, a gas injection port and a gas exhaust port; the base is arranged in the reaction chamber for supporting the wafer; the preheating ring is arranged around the base; the gas injection port is arranged on one side of the reaction chamber for introducing a first process gas; the gas exhaust port is arranged on the opposite side of the gas injection port for exhausting the first process gas, the preheating ring comprises: a ring body, the ring body comprises an inner edge and an outer edge; the ring body also comprises a first direction and a second direction, the first direction is a direction extending along the gas injection port and the gas exhaust port, and the second direction is a direction perpendicular to the first direction; The preheating ring further includes a protrusion, which is arranged on at least one side of the outer edge of the ring body in the second direction.

Optionally, the protrusions are arranged on both sides of the outer edge of the ring in the second direction.

Optionally, the inner edge is circular.

Optionally, the outer edge is circular.

Optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the first direction.

Optionally, the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the first direction.

Optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the second direction.

Optionally, the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the second direction.

Optionally, the outline of the protrusion is arc-shaped or polygonal.

Optionally, the protrusion occupies 1/4 to 1/3 of the outer edge of the preheating ring.

Optionally, the material of the preheating ring is any one of silicon carbide and graphite coated with silicon carbide.

The present invention also provides a semiconductor heating device, comprising: A reaction chamber, a base, a preheating ring, a gas injection port and a gas exhaust port; The base is arranged in the reaction chamber for supporting the wafer; The preheating ring is the above-mentioned preheating ring and is arranged around the base; The gas injection port is arranged on one side of the reaction chamber for introducing a first process gas; The gas exhaust port is arranged on the opposite side of the gas injection port for exhausting the first process gas.

Optionally, the method further comprises a second process gas introduced from a second direction.

Compared with the prior art, the beneficial effects of the present invention are: 1) By providing a protrusion on the preheating ring, the present invention can effectively suppress the surging of the purge gas from the gap and affect the second process gas, thereby achieving good film deposition quality; 2) By setting the inner and outer edges of the preheating ring into an elliptical shape, the present invention can better reduce the gap that needs to be suppressed.

The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by the ordinary knowledgeable person in the field without making progressive labor are within the scope of protection of the present invention.

It should be noted that, in this article, the terms "include", "comprising", "having" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of more restrictions, the elements defined by the phrase "include..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

It should be noted that the drawings are all in very simplified form and use non-precise ratios, which are only used to conveniently and clearly assist in explaining the purpose of the present invention.

FIG1 is a schematic cross-sectional view of a novel semiconductor heating device, which may be an epitaxial device or a CVD device.

As shown in FIG1 , the semiconductor heating device comprises a reaction chamber, in which a base 105 for carrying a wafer 104 is arranged; a heating assembly 101 and a temperature measuring instrument 102 are arranged at the top and bottom of the reaction chamber. The reaction chamber comprises an upper inner liner 100, a lower inner liner 112, an upper dome 116, a lower dome 108, a side wall, an upper flange 103 and a lower flange 107. The upper inner liner 100 and the lower inner liner 112 are both rings made of quartz, and are arranged on the inner side of the upper dome 116 and the lower dome 108 respectively; the upper inner liner 100 is arranged on the lower inner liner 112, and on the sides of the upper and lower inner liners. A gas injection port 113 for the first process gas 114 to pass through and a gas exhaust port 106 opposite to the gas injection port 113 are provided, the upper dome 116 is connected to the upper flange 103, and the upper dome 116 is fixed on the side wall through the upper flange 103; the lower dome 108 is connected to the lower flange 107, and the lower dome 108 is fixed below the side wall through the lower flange 107. The upper dome 116 and the lower dome 108 are made of quartz, and the infrared light emitted by each heating assembly 101 penetrates the upper dome 116 and the lower dome 108 into the reaction chamber to provide heating energy in the form of thermal radiation. A rotating support shaft 109, a support bracket 110 and a pin 111 are provided below the base 105. The rotating support shaft 109 is used to support the base 105 to rotate and rise and fall, and the support bracket 110 is used to support the pin 111 when the rotating support shaft 109 descends, so as to separate the wafer 104 from the base 105 when the wafer 104 is transported. The temperature measuring instrument 102 is provided at the top and bottom of the reaction chamber to monitor the temperature of the top and bottom of the wafer 104. A preheating ring 200 is also provided around the base 105 to preheat the first process gas 114 entering the reaction chamber.

FIG2 is a top view of the preheating ring 200 of this embodiment. The preheating ring 200 includes: A ring 201, wherein the ring 201 includes an inner edge 2011 and an outer edge 2013; The ring 201 also includes a first direction and a second direction, wherein the first direction is a direction extending along the gas injection port 113 and the gas exhaust port 106, and the second direction is a direction perpendicular to the first direction; the first direction is the y direction in FIG2, and the second direction is the x direction in FIG2. It can be seen from FIG2 that the first process gas G1 is injected into the upper surface of the wafer 104 from the gas injection port 113 in the first direction (i.e., the y direction) and discharged from the gas exhaust port 106; in order to compensate for the airflow disturbance caused by the rotation of the base, the second process gas G2 is also introduced into the surface of the wafer 104 from the second direction (i.e., the x direction).

The preheating ring 200 further includes a protrusion 203, which is disposed on at least one side of the outer edge 2013 of the ring in the second direction. The protrusion 203 provides a non-deformable characteristic during thermal expansion, so the gap D (the gap D is the gap between the base 105 and the preheating ring 200) of the preheating ring 200 at the location of the protrusion 203 is reduced compared to the gap D at other locations around the preheating ring, so the purge gas surge at the location of the protrusion 203 is reduced, and the impact of the purge gas surge on the second process gas G2 is reduced.

Of course, the protrusion 203 is optionally provided on both sides of the outer edge of the ring in the second direction, as shown in FIG3. In this way, since the protrusion 203 provides a non-deformable characteristic during thermal expansion, heating during the process will make the preheating ring become elliptical, and the gap D in the second direction is smaller than the gap D in the first direction, so the surge of the purge gas tends to occur on both sides of the preheating ring in the first direction, alleviating the impact on the second process gas G2.

Optionally, the inner edge is circular and the outer edge is circular.

In order to further reduce the gap D in the second direction, the inner edge 2011 is elliptical, and the long axis of the ellipse of the inner edge extends along the first direction. The outer edge 2013 is elliptical, and the long axis of the ellipse of the outer edge extends along the first direction.

Of course, as required, optionally, the inner edge is elliptical, and the major axis of the ellipse of the inner edge 2011 extends along the second direction. The outer edge 2013 is elliptical, and the major axis of the ellipse of the outer edge extends along the second direction.

Optionally, the outline of the protrusion is arc-shaped or polygonal. As shown in FIG. 4 , the outline is a polygon.

Optionally, the protrusion 203 occupies 1/4 to 1/3 of the outer edge of the preheating ring.

Optionally, the material of the preheating ring 200 is any one of silicon carbide and graphite coated with silicon carbide.

The preheating ring provided by the novel device can reduce the influence of the purge gas surge on the second process gas, thereby improving the uniformity of film deposition.

The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or substitutions within the technical scope disclosed by the present invention, and these modifications or substitutions should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the patent application.

100: Upper liner 101: Heating assembly 102: Thermostat 103: Upper flange 104: Wafer 105: Base 106: Gas outlet 107: Lower flange 108: Lower dome 109: Rotary support shaft 110: Support bracket 111: Pin 112: Lower liner 113: Gas injection port 116: Upper dome 200: Preheating ring 201: Ring body 2011: Inner edge 2013: Outer edge 203: Protrusion D: Gap 114, G1: First process gas G2: Second process gas

In order to more clearly explain the technical solution of the present invention, the following will briefly introduce the figures required for the description. Obviously, the figures described below are an embodiment of the present invention. For those with ordinary knowledge in this field, other figures can be obtained based on these figures without making any progressive efforts: Figure 1 is a cross-sectional schematic diagram of the semiconductor heating device of the present invention; Figure 2 is a schematic diagram of the preheating ring of the present invention; Figure 3 is a schematic diagram of another preheating ring of the present invention; Figure 4 is a schematic diagram of another preheating ring of the present invention.

104: Wafer

106: Gas exhaust port

113: Gas injection port

200: Preheating ring

201: Ring

2011:Inner Edge

2013: Outer Edge

203: Protrusion

D: Gap

G1: First process gas

G2: Second process gas

Claims (13)

A preheating ring is used for semiconductor heating equipment, the semiconductor heating equipment includes: a reaction chamber, a base, a preheating ring, a gas injection port and a gas exhaust port; the base is arranged in the reaction chamber for supporting a wafer; the preheating ring is arranged around the base; the gas injection port is arranged at one side of the reaction chamber for introducing a first process gas; the gas exhaust port is arranged at the opposite side of the gas injection port for exhausting the first process gas, wherein the preheating ring includes: a ring body, the ring body includes an inner edge and an outer edge; the ring body also includes a first direction and a second direction, the first direction is a direction extending along the gas injection port and the gas exhaust port, and the second direction is a direction perpendicular to the first direction; The preheating ring further includes a protrusion, which is arranged on at least one side of the outer edge of the ring body in the second direction. A preheating ring as described in claim 1, wherein the protrusion is arranged on both sides of the outer edge of the ring body in the second direction. A preheating ring as described in claim 1, wherein the inner edge is circular. A preheating ring as described in claim 3, wherein the outer edge is circular. A preheating ring as described in claim 1, wherein the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the first direction. A preheating ring as described in claim 5, wherein the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the first direction. A preheating ring as described in claim 1, wherein the inner edge is elliptical, and the major axis of the ellipse of the inner edge extends along the second direction. A preheating ring as described in claim 7, wherein the outer edge is elliptical, and the major axis of the ellipse of the outer edge extends along the second direction. A preheating ring as described in any one of claims 1 to 8, wherein the contour of the protrusion is arc-shaped or polygonal. A preheating ring as described in any one of claims 1 to 8, wherein the protrusion occupies 1/4 to 1/3 of the outer edge of the preheating ring. A preheating ring as described in any one of claims 1 to 8, wherein the material of the preheating ring is any one of silicon carbide and graphite coated with silicon carbide. A semiconductor heating device, comprising: A reaction chamber, a susceptor, a preheating ring, a gas injection port and a gas exhaust port; The susceptor is arranged in the reaction chamber for supporting a wafer; The preheating ring is a preheating ring as described in any one of claim items 1 to 11, and is arranged around the susceptor; The gas injection port is arranged at one side of the reaction chamber for introducing a first process gas; The gas exhaust port is arranged at the opposite side of the gas injection port for exhausting the first process gas. The semiconductor heating equipment as described in claim 12 further includes a second process gas introduced from a second direction.