TWM648770U - Wafer processing system - Google Patents

Abstract

A wafer processing system comprises a processing chamber, a cleaning device and a drying device. The processing chamber has a cantilever rotation device and a dynamic balance correction device. The cantilevered rotating device has a holding device to hold at least one wafer of various specifications and to rotate the wafer along a rotating axis of the cantilevered rotating device. The dynamic balance correction device performs a dynamic balance correction on the cantilever rotating device, so that the cantilever rotating device is in dynamic balance when rotating. At least one dynamic nozzle unit of the cleaning device jets the cleaning fluid to clean the rotating wafer, and the drying device is used to dry the rotating wafer.

Description

Wafer handling system

The invention relates to a processing system, in particular to a wafer processing system.

The production of semiconductors requires a considerable number of processes, and cleaning and drying procedures are often required before completion. However, the existing cleaning procedures are not only slow but also prone to producing waste liquid. For example, in the photolithography process, the photoresist layer must be completely cleaned and removed to ensure the cleanliness of subsequent processes. However, the current methods mostly use high-temperature sulfuric acid/hydrogen peroxide. The disadvantage of detergent removal is that it produces a large amount of waste acid and is not environmentally friendly. Although there are currently technologies that try to use ozone technology to replace existing photoresist removers, they are limited by ozone's solubility, stability, and mass transfer speed, so it is difficult to remove photoresist efficiently. Furthermore, although semiconductor materials, such as wafers, have high hardness, their high brittleness makes them prone to defects or even cracking due to uneven stress or vibration during cleaning or drying processes. Moreover, as the concentration of semiconductors becomes higher and higher, the aspect ratio of the component stack structure is also getting higher and higher, so the traditional cleaning and drying processes are becoming more difficult to achieve the expected results. It can be seen that there is still much room for improvement in existing semiconductor processing technology.

In view of this, one purpose of this invention is to provide a wafer processing system to solve the problems of traditional technologies.

In order to achieve the aforementioned purpose, this invention proposes a wafer processing system, which at least includes: at least one processing tank with a cantilever rotating device and a dynamic balance correction device. The cantilevered rotating device has a holding part for holding various specifications and parameters. The wafer is rotated along a rotation axis of the cantilevered rotating device, wherein the dynamic balance correction device performs a corresponding dynamic balance correction on the cantilevered rotating device, so that the cantilevered rotating device rotates In a dynamic balance state; a cleaning device has at least one dynamic nozzle unit, the dynamic nozzle unit correspondingly adjusts at least one operating parameter according to the specification parameters of the wafer, and is used to clean the wafer when the cantilever rotating device rotates. A cleaning fluid is sprayed round to perform a cleaning process; and a drying device is used to perform a drying process on the wafer that has been processed by the cleaning process when the cantilever rotating device rotates.

Wherein, the rotation axis of the cantilever type rotation device rotates obliquely at an angle that is not parallel to a horizontal plane.

Wherein, the processing tank is installed on a platform through at least one set of anti-vibration feet, so that at least one vibration value of the processing tank is smaller than a preset value.

Wherein, in the dynamic balance state, when the cantilevered rotating device rotates, the axis line of the rotating shaft coincides with the center line of mass of the cantilevered rotating device holding the wafer.

Wherein, the processing tank also has a protective cover surrounding the cantilevered rotating device.

Wherein, the inner side of the shield is provided with a blocking plate, and a blocking opening of the blocking plate faces the tangential direction when the wafer is rotated to intercept the cleaning fluid that has been subjected to the cleaning process on the rotating wafer. .

The dynamic balance correction device is disposed on the holding part and/or the rotating shaft of the cantilevered rotating device, and is used to perform the dynamic balance correction on the cantilevered rotating device using an over-distance force, so that the cantilevered rotating device The dynamic balance state can be maintained when the rotating device rotates.

Wherein, the dynamic balance correction device is an active magnetic bearing, which is used to perform corresponding dynamic balance correction on the cantilever rotating device.

Wherein, the dynamic balance correction device includes at least one first magnetic element and at least one second magnetic element. The first magnetic element is ring-mounted on the cantilevered rotating device, and the second magnetic element is non-contact surrounding the cantilevered rotating device. The cantilever-type rotating device utilizes the over-distance force effect between the first magnetic element and the second magnetic element to perform corresponding dynamic balance correction on the cantilever-type rotating device.

Wherein, the dynamic balance correction device is a center-of-mass adjustment structure provided on the cantilever-type rotation device, used to correct the center-of-mass line of the cantilever-type rotation device holding the wafer and the axis center of the rotation shaft. The degree of overlap between lines.

Wherein, the center of mass adjustment structure performs corresponding dynamic balance correction on the cantilevered rotating device by pivoting, telescoping or moving.

Wherein, the dynamic balance correction device is at least one wafer support of the holding part of the cantilever rotating device, and the wafer support has non-equivalent cross-sectional areas along the axis of the rotation axis.

Wherein, the cleaning fluid is cleaning liquid and/or hot steam.

It further includes a microwave generating unit, which generates a microwave to heat part or all of the cleaning liquid into the hot steam.

It further includes at least one auxiliary gas supply source for supplying an auxiliary gas to the treatment tank.

Wherein, the cleaning fluid includes an aqueous solution and/or hot steam, and the auxiliary gas is ozone, so that the cleaning fluid interacts with the auxiliary gas to form ozone water, thereby cleaning the wafer.

Wherein, the auxiliary gas is hot nitrogen to assist in drying the wafer.

Wherein, the drying device includes a heat energy supply unit and/or an air extraction unit. The heat energy supply unit supplies a heat energy to the treatment tank during the drying process. The air extraction unit enables the treatment to be performed during the drying process. The tank is below atmospheric pressure to accelerate drying of the wafer.

Wherein, the specification parameter of the wafer is selected from the group consisting of quantity, weight, position and size, and the operating parameter of the dynamic nozzle unit is selected from the group consisting of the injection direction of the dynamic nozzle unit, the dynamic nozzle A group consisting of the number of units, the flow rate of the cleaning fluid, the reciprocating speed of the dynamic nozzle unit and the cleaning time.

Wherein, the number of the dynamic nozzle units is a plurality, and the dynamic nozzle units cooperate with each other to jointly clean the wafer.

Wherein, the dynamic nozzle unit sprays the cleaning fluid on the wafer in a scanning manner to clean the wafer.

One side of the cantilevered rotating device is a supporting end, and the other side of the cantilevered rotating device is a free end. The wafer is detachably placed on the holding part of the cantilevered rotating device through the free end. .

Wherein, the dynamic balance correction device is based on the specification parameters of the wafer, the operating parameters of the dynamic nozzle unit, the rotation speed of the rotation axis and/or a vibration state, corresponding to the dynamic balance of the cantilever rotating device. Balance correction.

Based on the above, the wafer processing system created according to this invention has one or more advantages or technical effects:

(1) The cantilever-type rotating device can rotate the wafer at the required speed, and can save components and make the inside of the processing tank simpler.

(2) The cantilever-type rotating device tilts the wafer to increase the efficiency of cleaning and drying the wafer. The tilted interceptor plate helps to discharge the cleaning fluid and prevents the cleaning fluid from accumulating in the processing tank.

(3) The dynamic balance correction device can maintain the dynamic balance state of the cantilever-type rotating device holding wafers with various specifications and parameters during rotation.

(4) The dynamic nozzle unit can adjust the operating parameters according to the specifications of the wafer during the cleaning process, which can save the usage of cleaning fluid and achieve cleaning results faster.

(5) The auxiliary gas supplied by the auxiliary gas supply source can be used to assist in cleaning the wafer and can also be used to assist in drying the wafer.

(6) The drying device has a heat supply unit that can increase the temperature in the processing tank, and an air extraction unit that can reduce the air pressure in the processing tank to accelerate drying of the wafer.

(7) The anti-vibration feet made of rigid materials can effectively reduce the vibration value.

(8) The use of steam ozone stripping (VOS) technology helps improve the effect of cleaning and removing photoresist, and can also significantly reduce any impact on the environment, health and safety.

In order to enable Jun Shen to have a better understanding of the technical characteristics and the technical effects that can be achieved by this invention, the following is a preferred embodiment and a detailed description.

In order to facilitate understanding of the technical features, content and advantages of this invention and the effects it can achieve, this invention is described in detail below with diagrams and in the form of expressions of embodiments. The purpose of the diagrams used is only They are for illustration and auxiliary instructions, and may not represent the true proportions and precise configurations of the creation after its implementation. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of rights in the actual implementation of this creation. In addition, to facilitate understanding, the same elements in the following embodiments are labeled with the same symbols for explanation.

In addition, unless otherwise noted, the terms used throughout the specification and patent application generally have the ordinary meanings of each term used in the field, the content disclosed herein, and the specific content. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.

The use of "first", "second", "third", "fourth", etc. in this article does not specifically refer to the order or order, nor is it used to limit this creation. It is only used to distinguish between the same and the same. Technical terms describing components or operations only.

Secondly, if the words "include", "includes", "have", "contains", etc. are used in this article, they are all open terms, which means including but not limited to.

Please refer to Figures 1 to 8. Figure 1 is a schematic front view of the system architecture of the wafer processing system of this invention. Figure 2 is an operational block diagram of the wafer processing system of this invention. Figure 3 is a schematic side view of the first implementation of the wafer processing system of this invention. Figure 4 is a schematic side view of the second implementation of the wafer processing system of the present invention. Figure 5 is a schematic side view of a third implementation of the wafer processing system of the present invention. FIG. 6 is a schematic side view of the third implementation of the wafer processing system of the present invention before dynamic balance correction is performed. Figure 7 is a schematic side view of the fourth implementation form of the wafer processing system of the present invention. Figure 8 is a schematic three-dimensional structural diagram of the holding part of the wafer processing system of this invention. Among them, in order to more clearly display the structural design of the present invention, Figures 2 to 8 only illustrate partial structures of the present invention.

The wafer processing system 100 of the present invention includes at least one processing tank 10, a cleaning device 40 and a drying device 60. The treatment tank 10 has a cantilever rotating device 20 and a dynamic balance correction device 30 . The cantilever rotating device 20 has a holding part 22 and a rotating shaft 24 . The holding part 22 is used to detachably hold the wafer box 90 loaded with wafers 80 of various specifications (as shown in FIGS. 2 to 8 ), and can even directly detachably hold the wafers 80 of various specifications. (As shown in Figure 1). The specifications of the wafer 80 are, for example, selected from the group consisting of quantity, weight, location, and size. The rotation shaft 24 is used to drive the holding part 22 to rotate, so that the wafer 80 uses the axis of the rotation shaft 24 as the rotation axis to rotate along the rotation axis 24, for example, in the clockwise direction or the counterclockwise direction R (as shown in Figure 1 ). The rotation shaft 24 of the present invention can have various rotation speeds according to actual needs. The rotation speed ranges, for example, but is not limited to, from greater than 0 rpm to as high as about 12,000 rpm. The cleaning device 40 at least includes a fluid supply tank 43 and at least one dynamic nozzle unit 42. The fluid supply tank 43 is used to store the cleaning fluid. The dynamic nozzle unit 42 is connected to the fluid supply tank 43 and is used to rotate the crystal by the cantilever rotating device 20. When the wafer 80 is turned, the cleaning fluid is sprayed onto the wafer 80 to perform the cleaning process. The drying device 60 is used to dry the wafer 80 that has been processed by the above cleaning process when the cantilever rotating device 20 rotates the wafer 80 .

Since the cantilever rotating device 20 holds wafers 80 of different numbers and weights, the position of the overall center of mass line that was originally in the overlapping state will change to varying degrees, thus causing various structures (such as the holding part 22 and the rotation axis 24 or wafer 80) is subject to different degrees of centrifugal force at different positions at the same distance from the axis 24a of the rotation axis 24. Therefore, the dynamic balance correction device 30 of the present invention is, for example, based on the specifications of the wafer 80, the dynamic nozzle unit 42 One or more of the operating parameters, the rotational speed of the rotating shaft 24 and/or the vibration state are used to perform corresponding dynamic balance correction on the cantilevered rotating device 20, so that the cantilevered rotating device 20 holds crystals with different numbers and weights. After the circle is 80 degrees, it can still be in a state of dynamic balance during rotation.

For example, the treatment tank 10 has a shield 12 surrounding the outside of the cantilevered rotating device 20 so that the inside of the treatment tank 10 forms a sealed or airtight chamber. The shield 12 has, for example, a cover 15 to selectively open or close the chamber of the treatment tank 10 . When the cantilevered rotating device 20 rotates, the treatment tank 10 remains stationary. The cleaning device 40 and the drying device 60 are, for example, disposed on the shield 12 or in the space between the wafer 80 and the shield 12 to perform cleaning and drying procedures on the wafer 80 respectively. The shield 12 has, for example, a blocking plate 14. The blocking plate 14 is, for example, located inside the shield 12 and extends upward from the bottom of the shield 12. The blocking opening 16 of the blocking plate 14 faces the tangential direction of the wafer 80 when it rotates. The cleaning fluid (such as waste liquid and/or waste gas and other mixed fluids) that has completed the cleaning process of the rotating wafer 80 can be intercepted. If the cross-section of the blocking plate 14 is arc-shaped or semi-circular and the top side forms a baffle shape, it can also reduce the splashing of the cleaning fluid caused when the cleaning fluid is intercepted, and prevent the cleaning fluid from being repeated after the cleaning process. Contaminate wafer 80 during cleaning. Therefore, this invention can shorten the time required for the overall cleaning process by arranging the blocking plate 14 on the shield 12 . Moreover, if the baffle plate 14 of the guard 12 is inclined (the height decreases from one side of the guard 12 to the other side), that is, the extending direction is not parallel to the horizontal plane, it can also provide a flow diversion effect, so that the gravity will The cleaning fluid is quickly and completely discharged to the outside of the treatment tank 10 . Among them, this invention also includes a drainage system 18, such as a water pump. The drainage system 18 is connected to the treatment tank 10 through an output pipe 19, such as an output pipe 19a and a control valve 19b, and is located at a higher height than the intercepting plate 14. The other side of the low.

The processing tank 10 of the present invention can also be optionally provided on the platform 70 through at least one anti-vibration foot 72. The shield 12 can, for example, have a base 13, and for example, include at least one anti-vibration foot 72 located on the base 13 of the shield 12 and the platform. 70, it helps to make at least one vibration value of the processing tank 10 further smaller than a preset value, and the preset value is about 10 mm/s. The number of the above-mentioned anti-vibration feet 72 is not limited. It is, for example, any value greater than 1, such as 2, 4, 6 or 8, and is made of, for example, rigid materials (such as stainless steel and other metals). The rigid materials have a stiffness coefficient ( k) For example, approximately greater than 100. This invention uses anti-vibration feet 72 of rigid material to change the resonant frequency to reduce the vibration value. Taking the cantilever rotating device 20 to respectively hold a wafer box 90 loaded with 1 to 22 GaAs material wafers 80 and using 6 anti-vibration feet 72 as an example, when the rotation speed increases from 200 rpm to 1300 rpm, the traditional use The three directions (such as x-axis, y-axis, z-axis direction) obtained by the metal anti-vibration feet covered with rubber material (rigidity coefficient is 100), that is, two perpendicular radial directions and an axial direction perpendicular to the radial direction. direction), the vibration value will increase by approximately 6 to 25 times from the original approximately 2 mm/s. However, this invention uses anti-vibration feet 72 made of rigid materials (rigidity coefficient is 412), and the vibration values in the three directions are all lower than 6 mm/s. Even when the number of wafers 80 is 22, the vibration values in the three directions The vibration values can be maintained between about 0.3 mm/s ~1.96 mm/s, which shows that the anti-vibration feet 72 made of rigid materials in this invention indeed have technical effects that cannot be achieved by traditional technology. In addition, the number of the processing tanks 10 of the present invention can be one or more, and the material can be, for example, stainless steel or other acid and alkali resistant materials, but is not limited thereto. Taking multiple (for example, two) processing tanks 10 located on the same platform 70 as an example, the two processing tanks 10 can even achieve the effect of reducing the vibration value by abutting against each other. The platform 70 applicable to this invention is not particularly limited. It can be, for example, a base, a frame, a workbench, or even the ground, or any other object on which the processing tank 10 can be placed.

The rotation axis 24 of the cantilever-type rotating device 20 of the present invention is a single-arm suspended rotation, and is tilted at an angle that is not parallel to the horizontal plane, for example. Especially for the wafer 80 with a high aspect ratio component stack structure that is traditionally difficult to clean and prone to residual phenomena, this invention can achieve better cleaning results and improve cleaning fluid residual phenomena. In one embodiment, the above-mentioned angle is about 10 degrees, that is, the angle α between the axis 24a of the rotation shaft 24 and the horizontal plane is 10 degrees. However, the present invention is not limited to this, and the above-mentioned angle range may also be, for example, between about 0 degrees and about 90 degrees. Furthermore, the rotation axis 24 of the cantilever-type rotating device 20 of the present invention can also be rotated parallel to (as shown in FIG. 7 ) or perpendicular to the horizontal plane according to usage requirements. One feature of this invention is that the dynamic balance correction device 30 can be used to calibrate the cantilever type according to the specifications of the wafer 80 , the flow rate of the cleaning fluid, the rotation speed of the rotation shaft 24 and/or the vibration state (such as vibration values in all directions). The rotating device 20 performs dynamic balance correction, that is, correcting the degree of coincidence between the center of mass line 24b of the cantilevered rotating device 20 holding the wafer 80 and the axis line 24a of the rotating shaft 24 (as shown in Figures 5 and 6 (shown), that is, the cantilever rotating device 20 is in a dynamic balance state when rotating. When the degree of coincidence between the center of mass line 24b and the axis center line 24a is higher, the centrifugal force at different positions on the circumference of the rotation axis 24 will be closer. Therefore, even if the holding part 22 holds wafers 80 with various specifications and parameters, the present invention can use the dynamic balance correction device 30 to make the above-mentioned center line of mass 24b coincide with the axis line 24a of the rotation shaft 24, that is, the same structure (such as The holding part 22, the rotation shaft 24 or the wafer 80) can receive the same degree of centrifugal force at different positions at the same distance from the axis 24a of the rotation shaft 24. Therefore, this invention can also reduce defects or cracks caused by uneven stress on the wafer 80 during the rotation process.

The rotating shaft 24 of the present invention can be, for example, a ball bearing or a magnetic bearing, whereby the rotating shaft 24 can be driven to rotate by a contact type (such as a motor) or a non-contact type (such as electromagnetic force) through the driving component 29 respectively. The rotating shaft 24 is driven to float and rotate. Taking the rotating shaft 24 as a magnetic bearing driven by electromagnetic force as an example, the rotating shaft 24 can be an active magnetic bearing, a passive magnetic bearing or a hybrid (composed of an active magnetic bearing and a passive magnetic bearing) magnetic bearing.

The cantilever rotating device 20 of this invention is a single-arm rotating mechanism, that is, one side is a supporting end 21a, and the other side is a free end 21b. In detail, the cantilever rotating device 20 includes a connected rotating shaft 24 and a holding part 22, where one end of the rotating shaft 24 is located at the above-mentioned supporting end 21a, one end of the holding part 22 is connected to the other end of the rotating shaft 24, and the holding part 22 The other end of 22 is located at the above-mentioned free end 21b. The holding portion 22 is configured to detachably hold wafers 80 of various specifications, or to detachably hold a wafer box 90 loaded with wafers 80 of various specifications. The holding part 22 has, for example, a plurality of wafer holders 23 and two connecting plates 25a and 25b. The two connecting plates 25a and 25b are respectively located at both ends of the wafer holder 23 to form a frame with positioning grooves 26. Among them, the connecting plate 25b located at the free end 21b has an opening 27 connected to the positioning groove 26. Therefore, the wafer 80 is detachably placed on the holding part 22 of the cantilever rotating device 20 through the opening 27 located at the free end 21b. in the positioning groove 26. The shape or size of the holding portion 22 and its positioning groove 26 is not particularly limited. As long as it can hold the wafer 80 or the wafer box 90 carrying the wafer 80 and prevent loosening or falling off, it can be used in this invention. For example, the wafer box 90 can be a commercially available wafer box of various sizes, and the wafers 80 can be of various sizes, quantities, weights or materials, such as Si, SiC, SiGe, Ge, GaAs, GaN or InP, etc., and For example, it can be processed by any semiconductor process and have various weights and component stacking structures. The shape or size of the positioning groove 26 of the holding portion 22 is corresponding to the wafer 80 or the wafer cassette 90 carrying the wafer 80 .

The dynamic balance correction device 30 of the processing tank 10 of the present invention is, for example, provided on the holding part 22 and the rotating shaft 24 of the cantilever rotating device 20, or the holding part 22 and the rotating shaft 24, for automatically and/or manually adjusting the rotation. And/or perform dynamic balance correction on the cantilever rotating device 20 before rotation, so that the cantilever rotating device 20 can maintain a dynamic balance state when rotating. The number of dynamic balance correction devices 30 is not particularly limited. It can be one or a plurality of them. As long as dynamic balance correction can be performed, it can be applied to this invention.

For example, the dynamic balance correction device 30 of the processing tank 10 of the present invention is, for example, an active magnetic bearing or other element that can perform dynamic balance correction of the cantilever rotating device 20 in a non-contact manner using over-distance force. Taking active magnetic bearings as an example, the dynamic balance correction device 30 includes, for example, at least one first magnetic element 32a and at least one second magnetic element 32b and other magnetic correction ring components. The first magnetic element 32a is arranged on a cantilever rotating device. On the rotating shaft 24 (shown in Figure 3) or the holding part 22 (shown in Figures 5 and 6) of the 20, the second magnetic element 32b is a non-contact surrounding cantilever rotating device 20, such as being provided on the shield 12 or At other positions, the over-distance force between the first magnetic element 32a and the second magnetic element 32b is used to dynamically balance the cantilever rotating device 20 in a non-contact manner. The first magnetic element 32a is, for example, a magnetic element such as an iron sheet or a magnet, and the second magnetic element 32b is, for example, an electromagnet with adjustable magnetic force, thereby forming a radial magnetic bearing. Among them, the radial magnetic bearing of the present invention can be divided into three-pole type, four-pole type, eight-pole type, sixteen-pole type or so on according to the structural type. Taking the eight-pole type as an example, the eight magnetic poles are divided into four pairs to form four sets of independent magnetic circuits, which control two directions in pairs. The dynamic balance correction device 30 may also optionally include a position sensor 33 and a controller 35 . The position sensor 33 is used to sense the radial position of the cantilever rotating device 20 in real time, and the controller 35 generates a corresponding control signal based on the sensing result of the position sensor 33 to real-time control the radial magnetic bearing. The magnetic pole is used to perform dynamic balance correction on the cantilever rotating device 20 until it reaches the required dynamic balance state.

In addition, the dynamic balance correction device 30 of the present invention can also be, for example, a center-of-mass adjustment structure 36 such as a counterweight (as shown in FIG. 4 ). Taking the counterweight as an example, the center-of-mass adjustment structure 36 is, for example, fixed or movable on the cantilevered rotating device 20, and can perform corresponding dynamic balancing on the cantilevered rotating device 20, for example, by pivoting, telescoping or moving. Correction. For example, the counterweight is fixedly provided on the wafer holder 23 of the holding part 22 , and the wafer holder 23 has non-equivalent cross-sectional areas (that is, different thicknesses) along the axis of the rotation axis 24 . , so as to achieve the effect of dynamic balance correction. The counterweight may also be movable, for example, disposed on the wafer holder 23 of the holding part 22, and may move or expand or contract on the wafer holder 23 along the axis of the rotation shaft 24, thereby achieving dynamic balance correction. The effect. Alternatively, the counterweight is, for example, pivoted on the wafer support 23 of the holding part 22 and can rotate on the wafer support 23 to achieve dynamic balance correction through eccentricity. Since a person with ordinary knowledge in the technical field to which this invention belongs, based on the foregoing disclosure of this invention, should understand how to achieve the aforementioned dynamic balance correction effect through the use of counterweight blocks and the required matching structures and auxiliary components, therefore no further explanation is given here. Repeat.

The cleaning device 40 of the present invention has at least one dynamic nozzle unit 42 . The dynamic nozzle unit 42 can, for example, automatically and/or manually adjust at least one operating parameter according to at least one specification parameter of the wafer 80 to spray the cleaning fluid on the wafer 80 when the cantilever rotating device 20 rotates the wafer 80 . Cleaning procedure. For example, the dynamic nozzle unit 42 sprays the cleaning fluid on the wafer 80 in a scanning (or reciprocating) manner when the cantilever rotating device 20 rotates the wafer 80 to perform the cleaning process, thereby reducing the use of cleaning fluid required for the cleaning process. quantity. Since a person with ordinary knowledge in the technical field of this invention, based on the foregoing disclosure of this invention, should understand how the dynamic nozzle unit 42 achieves the above-mentioned effects and its required matching structure and auxiliary components, they will not be described again here. The specification parameters of the wafer 80 are selected from the group consisting of quantity, weight, position and size. The operating parameters of the dynamic nozzle unit 42 are selected from the group consisting of the injection direction of the dynamic nozzle unit 42, the number of the dynamic nozzle unit 42, A group consisting of the flow rate of the cleaning fluid, the reciprocating speed of the dynamic nozzle unit 42 and the cleaning time. The number of dynamic nozzle units 42 is, for example, a plurality, and is, for example, spaced apart from each other by a certain distance. These dynamic nozzle units 42 can selectively operate independently, and these dynamic nozzle units 42 can also selectively operate cooperatively with each other to jointly clean the wafer 80 . The dynamic nozzle units 42 cooperate with each other, for example, by performing cleaning processes simultaneously, sequentially or staggered in the same or complementary cleaning mode on one or more wafers 80 to be cleaned, thereby improving the cleaning effect and saving money. The amount of cleaning fluid used. The type of cleaning fluid corresponds to the wafer 80 to be cleaned and is not limited to liquid and/or gas. Taking cleaning the wafer 80 with a photoresist component as an example, the cleaning fluid ejected by the dynamic nozzle unit 42 is, for example, a cleaning liquid (such as deionized water or ozone water) and/or hot steam (such as vaporized water), or also It can be any suitable photoresist cleaning fluid, and can even be a corresponding cleaning fluid according to the substances to be cleaned or removed. This invention can achieve a better cleaning effect and can improve the residual phenomenon of cleaning fluid, especially the wafer 80 with a high aspect ratio component stack structure that is traditionally difficult to clean and prone to residual phenomena. In addition, those with ordinary knowledge in the technical field of this invention should understand that the operation method of the dynamic nozzle unit 42 of this invention is not limited to the above content, and any operation method can be applied as long as it can achieve the effect of cleaning the wafer 80 This work is in progress.

For example, the wafer processing system 100 of the present invention may optionally include a microwave generating unit 44. The microwave generating unit 44 generates microwaves to quickly and efficiently remove part or all of the cleaning liquid (such as water or ozone water) provided by the fluid supply tank 43. It is heated immediately to become hot steam, and the hot steam is sprayed onto the wafer 80 through the dynamic nozzle unit 42 . As mentioned above, the wafer processing system 100 of the present invention may optionally include an auxiliary gas supply source 46 for supplying auxiliary gas to the processing tank 10 during the cleaning process and/or drying process. Among them, the auxiliary gas supply source 46 is not limited to sharing the above-mentioned dynamic nozzle unit 42 that sprays the cleaning fluid to supply the auxiliary gas to the treatment tank 10. The auxiliary gas supply source 46 can also supply the auxiliary gas to the treatment tank through an independent dynamic nozzle unit 42, for example. 10, or the auxiliary gas is supplied to the treatment tank 10 through a general gas input port 17. As long as the auxiliary gas can be supplied to the treatment tank 10, it can be applied to this invention. The auxiliary gas supply source 46 of the present invention includes, for example, an ozone supply source 46a and/or a hot nitrogen supply source 46b. Similarly, this creation is not limited to the above examples. Any suitable method that can provide the above hot steam and auxiliary gas can be applied to this creation.

Taking the cleaning process as an example, if the wafer 80 to be cleaned has a photoresist component to be cleaned, the cleaning fluid ejected by the dynamic nozzle unit 42 is, for example, an aqueous solution and/or hot steam, and the auxiliary gas supply source 46 is an ozone supply source. 46a supplies auxiliary gas such as ozone (O ₃ ), so that the cleaning fluid interacts with the auxiliary gas to instantly form ozone water, thereby cleaning the wafer 80 . When these aqueous solutions and/or hot steam are sprayed onto the rotating (such as high-speed tilt rotation) wafer 80 , they will first hit the auxiliary gas (ozone gas) provided by the auxiliary gas supply source 46 at high speed to form a gas that can remove the photoresist. The ozone water (ie, vapor ozone stripping (VOS) technology) immediately contacts the rotating wafer 80, thereby reducing the thickness of the interface diffusion layer between the ozone water and the photoresist, and accelerating the diffusion rate of the ozone water on the photoresist. Moreover, this invention can greatly increase the solubility of ozone through the high pressure of water and/or hot steam hitting ozone gas at high speed, so it can greatly improve the inefficiency of traditional immersion photoresist removal technology. This invention can effectively increase the concentration of ozone water, and can also prevent the ozone water from reducing its concentration due to poor half-life or solubility during the process of cleaning the wafer 80 . In addition, the invention is not limited thereto. The invention can also directly spray ozone water or ozone gas into the treatment tank 10 through the dynamic nozzle unit 42 , or provide ozone in any other suitable way (such as through the gas input port 17 ). The gas flows into the treatment tank 10 . Taking the drying process as an example, the auxiliary gas supply source 46 is, for example, a hot nitrogen supply source 46b that supplies auxiliary gas such as hot nitrogen (N ₂ ) to the processing tank 10 to assist in drying the wafer 80 . It can be seen that this invention can shorten the time required for the overall cleaning process or drying process by supplying auxiliary gases such as ozone or hot nitrogen.

The drying device 60 of the present invention is used to dry the wafer 80 that has been processed by the above cleaning process when the cantilever rotating device 20 rotates the wafer 80 . For example, the drying device 60 optionally includes a thermal energy supply unit 62 and/or an air extraction unit 64. The thermal energy supply unit 62 is used to supply thermal energy to the processing tank 10 during the drying process, which helps to accelerate the volatilization of the cleaning liquid in the cleaning fluid, so as to accelerate the drying of the wafer 80 . The thermal energy supply unit 62 is, for example, an infrared light (IR) generation source that can generate infrared light, but is not limited thereto. The infrared light generating source can provide heat energy to the processing tank 10 by emitting infrared rays. In addition, if the wavelength of infrared light resonates with the components of the cleaning fluid to increase the temperature, the drying process can also be accelerated. That is to say, this invention can not only rotate and throw off the cleaning fluid on the wafer 80 through the rotation of the cantilever rotating device 20, but also accelerate drying of the wafer 80 by using heat energy or reducing gas pressure. Similarly, this invention can also selectively use the heat supply unit 62 (such as an infrared light generating source) of the drying device 60 to provide heat energy to the treatment tank 10 during the cleaning process to accelerate the cleaning process. This invention can also selectively use the gas input port 17 to output the hot nitrogen supplied by the hot nitrogen supply source 46b or use the dynamic nozzle unit 42 to spray the hot nitrogen supplied by the hot nitrogen supply source 46b during the drying process, that is, the present invention By continuously introducing hot nitrogen gas and discharging the hot nitrogen gas, the cleaning fluid can be caused to leave the surface of the wafer 80 and be discharged to the outside of the processing tank 10, so that the effect of drying the wafer 80 can be achieved. In addition, hot nitrogen also helps to accelerate the decomposition of ozone or ozone water used in the cleaning process into oxygen and water, so it can achieve the effect of clean emissions.

The air extraction unit 64 of the drying device 60 of the present invention is, for example, an air extraction pump, and is connected to the treatment tank 10 through an output pipe 19, such as an output pipe 19d and a control valve 19c. However, the way in which the air extraction unit 64 is connected to the treatment tank 10 is not limited to the above example. As long as the gas pressure of the treatment tank 10 can be reduced, any method can be applied to this invention. During the drying process, this invention uses the air extraction unit 64 to evacuate the treatment tank 10 to reduce the gas pressure of the treatment tank 10 to less than one atmosphere (760 torr), which helps to accelerate the evaporation of the cleaning liquid in the cleaning fluid. Achieve the effect of accelerating drying. Moreover, for wafers 80 with high aspect ratio component stack structures that are difficult to dry in the past, the drying device 60 of the present invention can further shorten the time required for the overall drying process. There is no limit to the degree of vacuum required by the extraction unit 64 of the present invention, which can range from low vacuum to ultra-high vacuum. As long as it helps to accelerate the drying of the wafer 80, it can be applied to the present invention.

To sum up, the wafer processing system of this invention has one or more advantages or technical effects:

(1) The cantilever-type rotating device can rotate the wafer at the required speed, and can save components and make the inside of the processing tank simpler.

(2) The cantilever-type rotating device tilts the wafer to increase the efficiency of cleaning and drying the wafer. The tilted interceptor plate helps to discharge the cleaning fluid and prevents the cleaning fluid from accumulating in the processing tank.

(3) The dynamic balance correction device can maintain the dynamic balance state of the cantilever-type rotating device holding wafers with various specifications and parameters during rotation.

(4) The dynamic nozzle unit can adjust the operating parameters according to the specifications of the wafer during the cleaning process, which can save the usage of cleaning fluid and achieve cleaning results faster.

(5) The auxiliary gas supplied by the auxiliary gas supply source can be used to assist in cleaning the wafer and can also be used to assist in drying the wafer.

(6) The drying device has a heat supply unit that can increase the temperature in the processing tank, and an air extraction unit that can reduce the air pressure in the processing tank to accelerate drying of the wafer.

(7) The anti-vibration feet made of rigid materials can effectively reduce the vibration value.

(8) The use of steam ozone stripping (VOS) technology helps improve the effect of cleaning and removing photoresist, and can also significantly reduce any impact on the environment, health and safety.

The above is only illustrative and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this creation shall be included in the appended patent application scope.

10: Processing tank 12: Protective cover 13: Base 14:Cut plate 15: Cover 16: Cut-off port 17:Gas input port 18:Drainage system 19:Output pipe fittings 19a, 19d: output tube 19b, 19c: Control valve 20: Cantilever rotating device 21a: Support end 21b: Free end 22: Holding part 23:Wafer holder 24:Rotation axis 24a: Axis line 24b: Center of mass line 25a, 25b: connecting plate 26: Positioning slot 27:Open your mouth 29:Drive components 30:Dynamic balance correction device 32a: First magnetic element 32b: Second magnetic element 33: Position sensor 35:Controller 36: Center of mass adjustment structure 40:Cleaning device 42: Dynamic nozzle unit 43: Fluid supply tank 44:Microwave generation unit 46: Auxiliary gas supply source 46a: Ozone supply source 46b: Hot nitrogen supply source 60:Drying device 62:Heat energy supply unit 64: Air extraction unit 70:Platform 72: Anti-vibration feet 80:wafer 90:wafer box 100:Wafer handling system x, y, z: direction R: direction α: included angle

Figure 1 is a schematic front view of the system architecture of the wafer processing system of this invention.

Figure 2 is an operational block diagram of the wafer processing system of this invention.

Figure 3 is a schematic side view of the first implementation of the wafer processing system of this invention.

Figure 4 is a schematic side view of the second implementation of the wafer processing system of the present invention.

Figure 5 is a schematic side view of a third implementation of the wafer processing system of the present invention.

FIG. 6 is a schematic side view of the third implementation of the wafer processing system of the present invention before dynamic balance correction is performed.

Figure 7 is a schematic side view of the fourth implementation form of the wafer processing system of the present invention.

Figure 8 is a schematic three-dimensional structural diagram of the holding part of the wafer processing system of this invention.

10: Processing tank

12: Protective cover

13: Base

14:Cut plate

16: Cut-off port

17:Gas input port

18:Drainage system

19:Output pipe fittings

19a, 19d: output tube

19b, 19c: Control valve

20: Cantilever rotating device

22: Holding part

24:Rotation axis

26: Positioning slot

30:Dynamic balance correction device

42: Dynamic nozzle unit

43: Fluid supply tank

44:Microwave generation unit

46: Auxiliary gas supply source

46a: Ozone supply source

46b: Hot nitrogen supply source

62:Heat energy supply unit

64: Air extraction unit

70:Platform

72: Anti-vibration feet

80:wafer

100:Wafer handling system

x, y, z: direction

R: direction

Claims (23)

A wafer processing system, including at least: At least one processing tank has a cantilever rotating device and a dynamic balance correction device. The cantilever rotating device has a holding part for holding wafers of various specifications and causing the wafer to move along one of the cantilever rotating devices. The rotating shaft rotates, wherein the dynamic balance correction device performs a corresponding dynamic balance correction on the cantilevered rotating device, so that the cantilevered rotating device is in a dynamic balance state when rotating; A cleaning device having at least one dynamic nozzle unit, the dynamic nozzle unit correspondingly adjusts at least one operating parameter according to the specification parameters of the wafer, and is used to spray a cleaning fluid to the wafer when the cantilever rotating device rotates to perform a cleaning process; and A drying device is used to perform a drying process on the wafer that has been processed by the cleaning process when the cantilever rotating device rotates. The wafer processing system of claim 1, wherein the rotation axis of the cantilever rotating device rotates obliquely at an angle that is not parallel to a horizontal plane. The wafer processing system of claim 1, wherein the processing tank is installed on a platform through at least one set of anti-vibration feet, so that at least one vibration value of the processing tank is smaller than a preset value. The wafer processing system of claim 1, wherein in the dynamic balance state, when the cantilever rotating device rotates, an axis line of the rotation axis coincides with the cantilever holding the wafer. One of the centroid lines of the rotating device. The wafer processing system of claim 1, wherein the processing tank also has a shield surrounding the cantilevered rotating device. The wafer processing system of claim 5, wherein the inner side of the shield is provided with a blocking plate, and the blocking opening of the blocking plate faces the tangential direction when the wafer is rotated to intercept the rotated wafer. The wafer is subjected to the cleaning fluid in the cleaning process. The wafer processing system as claimed in claim 1, wherein the dynamic balance correction device is provided on the holding part and/or the rotating shaft of the cantilever rotating device, for utilizing an over-distance force to act on the cantilevered rotating device. The rotating device performs the dynamic balance correction so that the dynamic balance state can be maintained when the cantilevered rotating device rotates. The wafer processing system as claimed in claim 7, wherein the dynamic balance correction device is an active magnetic bearing for performing corresponding dynamic balance correction on the cantilever rotating device. The wafer processing system of claim 7, wherein the dynamic balance correction device includes at least a first magnetic element and at least a second magnetic element, and the first magnetic element is arranged around the cantilevered rotating device, The second magnetic element surrounds the cantilevered rotating device in a non-contact manner, thereby utilizing the over-distance force between the first magnetic element and the second magnetic element to perform corresponding dynamic balancing of the cantilevered rotating device. Correction. The wafer processing system of claim 1, wherein the dynamic balance correction device is a center of mass adjustment structure provided on the cantilevered rotating device for correcting one of the cantilevered rotating devices holding the wafer. The degree of coincidence between the center of mass line and the axis center line of the rotation axis. The wafer processing system of claim 10, wherein the center of mass adjustment structure performs corresponding dynamic balance correction on the cantilevered rotating device by pivoting, telescoping or moving. The wafer processing system of claim 1, wherein the dynamic balance correction device is at least one wafer support of the holding part of the cantilever rotating device, and the wafer support is along the axis of the rotation axis. Have non-equivalent cross-sectional areas. The wafer processing system of claim 1, wherein the cleaning fluid is cleaning liquid and/or hot steam. The wafer processing system of claim 13 further includes a microwave generating unit that generates a microwave to heat part or all of the cleaning liquid into the hot steam. The wafer processing system of claim 1 or 13 further includes at least one auxiliary gas supply source for supplying at least one auxiliary gas to the processing tank. The wafer processing system of claim 15, wherein the cleaning fluid includes an aqueous solution and/or hot steam, and the auxiliary gas is ozone, so that the cleaning fluid interacts with the auxiliary gas to form an ozone aqueous solution, thereby cleaning the wafer. The wafer processing system of claim 15, wherein the auxiliary gas is hot nitrogen to assist in drying the wafer. The wafer processing system of claim 15, wherein the drying device includes a heat energy supply unit and/or an air extraction unit, and the heat energy supply unit supplies heat energy to the processing tank during the drying process, and the air extraction unit During the drying process, the gas unit makes the processing tank lower than one atmosphere, thereby accelerating drying of the wafer. The wafer processing system of claim 1, wherein the specification parameter of the wafer is selected from the group consisting of quantity, weight, position and size, and the operating parameter of the dynamic nozzle unit is selected from the group consisting of A group consisting of the injection direction of the dynamic nozzle unit, the number of the dynamic nozzle unit, the flow rate of the cleaning fluid, the reciprocating speed of the dynamic nozzle unit and the cleaning time. The wafer processing system of claim 1, wherein the number of the dynamic nozzle units is a plurality, and the dynamic nozzle units operate cooperatively with each other to jointly clean the wafer. The wafer processing system of claim 1, wherein the dynamic nozzle unit sprays the cleaning fluid on the wafer in a scanning manner to clean the wafer. The wafer processing system of claim 1, wherein one side of the cantilevered rotating device is a supporting end, and the other side of the cantilevered rotating device is a free end, and the wafer is detachably placed through the free end. On the holding part of the cantilever rotating device. The wafer processing system of claim 1, wherein the dynamic balance correction device is based on the specification parameters of the wafer, the operating parameters of the dynamic nozzle unit, the rotation speed of the rotation axis and/or a vibration state Corresponding dynamic balance correction is performed on the cantilever rotating device.