TWM642861U - Plane piezoelectric vibration module - Google Patents

Abstract

A plane piezoelectric vibration module includes an insulating bottom layer, an insulating-auxiliary-layer structure, a piezoelectric element, an adhesive layer, a first conductive structure and a second conductive structure. The insulating-auxiliary-layer structure is arranged on the insulating bottom layer. The piezoelectric element includes at least one piezoelectric material layer, a first electrode and a second electrode, wherein the first electrode is extended on a first surface, part of a side surface and part of a second surface of the piezoelectric material layer, and the second electrode is arranged on another part of the second surface. Part of the first electrode is attached to the insulating-auxiliary-layer structure through the adhesive layer. The first conductive structure and the second conductive structure are arranged on the insulating-auxiliary-layer structure, and are respectively located on two sides of the piezoelectric element, wherein the first conductive structure and the second conductive structure are respectively electrically connected to the first electrode and the second electrode. The plane piezoelectric vibration module has the advantages of thinning, high reliability, and stability of wide-band frequency response in term of sound pressure.

Description

Planar piezoelectric vibration module

This creation is about the structure of a piezoelectric vibration module, especially about the structure of a planar piezoelectric vibration module.

In the sound reproduction environment, there are many factors that may reduce the quality of the reproduced sound perceived by the listener, and present the difference between the reproduced sound and the original sound segment. One such factor is the distortion of the sound pressure frequency response across the audio spectrum caused by the deformation of the planar horn of the vibrating element in the sound system.

Due to the rapid increase in the demand for thin and light speakers along with the electronic product market. And how to ensure the sound quality of the sound, but also have enough thinness and quality to be built into electronic products, has become the focus of technological development of new speaker products, such as planar piezoelectric vibration modules.

This creation provides a planar piezoelectric vibration module, which has the advantages of thinness, high reliability and good stability of sound pressure response.

The planar piezoelectric vibration module provided by this creation includes an insulating bottom layer, an insulating auxiliary layer structure, a piezoelectric element, an adhesive layer, a first conductive structure and a second conductive structure. The insulating auxiliary layer structure is arranged on the insulating bottom layer; the piezoelectric element includes a piezoelectric material layer, a first electrode and a second electrode, and the piezoelectric material The layer includes a first surface, a second surface and a side surface, the first surface and the second surface face each other, the side connects the first surface and the second surface, the second surface includes the first part and the second part, and the first part and the second part are separated , the first electrode is extended on the first surface, part of the side surface and the first part, wherein a part of the first electrode on the first surface faces the insulating auxiliary layer structure, and the second electrode is arranged on the second part; the next layer is arranged on the insulating auxiliary layer structure , and the part of the first electrode facing the insulating auxiliary layer structure is attached to the insulating auxiliary layer structure; the first conductive structure and the second conductive structure are arranged on the insulating auxiliary layer structure and are respectively located on both sides of the piezoelectric element, the first conductive The structure includes a first electrode connection area and a first external connection end, and the second conductive structure includes a second electrode connection area and a second external connection end, wherein the first electrode connection area is electrically connected to the first electrode, and the second electrode connection area is electrically connected to the first electrode connection area. connected to the second electrode.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a protective layer covering the piezoelectric element, part of the first conductive structure and part of the second conductive structure, and exposing the first external connection terminal and the second external connection end.

In an embodiment of the present invention, the insulating auxiliary layer structure and the insulating bottom layer have different thermal expansion coefficients or different Young's moduli.

In an embodiment of the present invention, the above-mentioned adhesive layer further covers a part of the side surfaces where the first electrodes are not provided, and covers a part of the first electrodes provided on the part of the side surfaces.

In an embodiment of the present invention, the above-mentioned insulating auxiliary layer structure includes a first insulating layer, and the first conductive structure, the second conductive structure and the bonding layer are located on the first insulating layer.

In one embodiment of the present invention, the above insulating auxiliary layer structure includes a first insulating layer, a second insulating layer and an auxiliary bonding layer, the second insulating layer is located on the insulating bottom layer, the first insulating layer is located on the second insulating layer, The auxiliary bonding layer is located on the first insulating layer.

In an embodiment of the present creation, the area of the above-mentioned auxiliary bonding layer is smaller than the area of the first insulating layer, and part of the first electrode facing the structure of the insulating auxiliary layer is connected to the auxiliary bonding layer through the bonding layer, and part of the first conductive structure and Part of the second conductive structure is further located on two sides of the auxiliary bonding layer and disposed on the first insulating layer.

In an embodiment of the present invention, the above-mentioned second insulating layer and the auxiliary bonding layer are made of different materials than the first insulating layer.

The planar piezoelectric vibration module provided by this creation includes an insulating bottom layer, an insulating auxiliary layer structure, an insulating filling layer, a piezoelectric element, an adhesive layer, a first conductive structure and a second conductive structure. The insulating auxiliary layer structure is arranged on the insulating bottom layer; the first conductive structure is arranged on the insulating auxiliary layer structure in a layered form, the first conductive structure includes the first electrode connection area and the first external connection end; the insulating filling layer is arranged on the first conductive structure and cover at least one side of the first conductive structure; the piezoelectric element includes a piezoelectric material layer, a first electrode and a second electrode, the piezoelectric material layer includes a first surface, a second surface and a side surface, the first surface and the second The surfaces are opposite, and the side faces are connected to the first surface and the second surface. The first electrode is arranged on the first surface and faces the insulating filling layer, and the second electrode is arranged on the second surface; the next layer corresponds to the first electrode connection area and is arranged on the insulating filling layer. On the layer, at least the first electrode facing the insulating filling layer is connected to the insulating filling layer; the second conductive structure is arranged on one side of the insulating filling layer and the next layer, and is isolated from the first conductive structure by a part of the insulating filling layer, The second conductive structure includes a second electrode connection area and a second external connection terminal, wherein the second electrode connection area is electrically connected to the second electrode.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a protective layer, and the protective layer covers the piezoelectric element, the bonding layer and part of the second conductive structure.

In an embodiment of the present invention, the insulating auxiliary layer structure and the insulating bottom layer have different thermal expansion coefficients or different Young's moduli.

In an embodiment of the present invention, the above-mentioned adhesive layer further covers part of the side surfaces of the piezoelectric material layer.

In an embodiment of the present invention, the above-mentioned insulating auxiliary layer structure includes a first insulating layer, and the first conductive structure is located on the first insulating layer.

In an embodiment of the present invention, the above-mentioned insulating auxiliary layer structure includes a first insulating layer and a second insulating layer of different insulating materials, the second insulating layer is located on the insulating bottom layer, and the first insulating layer is located on the second insulating layer. The first conductive structure is located on the first insulating layer.

In an embodiment of the present invention, the thickness of the above-mentioned first insulating layer is greater than the thickness of the second insulating layer and the thickness of the first conductive structure.

In an embodiment of the present invention, the above-mentioned insulating filling layer and the bonding layer use the same insulating material.

In an embodiment of the present creation, the above-mentioned planar piezoelectric vibration module further includes a third insulating layer disposed between the second insulating layer and the insulating bottom layer, wherein the material of the third insulating layer is different from that of the second insulating layer and the second insulating layer. The material of the insulating base.

In an embodiment of the present invention, the third insulating layer and the insulating filling layer use the same insulating material.

In this invention, in the planar piezoelectric vibration module, one or both of the first conductive structure and the second conductive structure electrically connected to the first electrode and the second electrode of the piezoelectric element are arranged on the piezoelectric vibration module slightly vertically. One or both sides of the electric element can omit the upper and lower stacking of the first conductive structure and/or the second conductive structure, so the thickness of the planar piezoelectric vibration module can be effectively reduced to achieve the effect of thinning. Furthermore, through the selection and stacking of materials between layers, the number of layers in the planar piezoelectric vibration module can be reduced. The problem of delamination or bending caused by deformation can be eliminated, the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response can be improved, and it has the advantages of high reliability and good sound pressure response stability.

In order to make the above and other purposes, features and advantages of this invention more comprehensible, the following specific examples are given together with the accompanying drawings and described in detail as follows.

10, 10A, 10B, 10C, 10D: planar piezoelectric vibration module

12: Insulation bottom layer

14, 14A, 14B, 14C: Insulation auxiliary layer structure

16, 40: Piezoelectric element

18, 18A, 18B: the next layer

20, 42: the first conductive structure

201, 421: first electrode connection area

202, 422: the first external connection end

22, 44: the second conductive structure

221, 441: the second electrode connection area

222, 442: the second external connection end

24: The first insulating layer

26, 46: piezoelectric material layer

261, 461: the first surface

262, 462: second surface

262a: Part I

262b: Second part

262c: Part III

263, 463: side

263a, 263b: side surfaces

28, 48: the first electrode

30, 50: the second electrode

32: protective layer

34, 34A: second insulating layer

36: Auxiliary bonding layer

38: insulating filling layer

52: Then fill the layer

54: The third insulating layer

FIG. 1 is a schematic structural diagram of a planar piezoelectric vibration module according to a first embodiment of the invention.

Fig. 2 is a schematic structural diagram of a planar piezoelectric vibration module according to a second embodiment of the invention.

FIG. 3 is a schematic structural view of a planar piezoelectric vibration module according to a third embodiment of the invention.

Fig. 4 is a schematic structural diagram of a planar piezoelectric vibration module according to a fourth embodiment of the invention.

Fig. 5 is a schematic structural diagram of a planar piezoelectric vibration module according to a fifth embodiment of the invention.

Fig. 1 is a schematic structural view of the planar piezoelectric vibration module of the first embodiment of the present creation. As shown in Fig. 1, the planar piezoelectric film group 10 includes an insulating bottom layer 12, an insulating auxiliary layer structure 14, a piezoelectric element 16, and a bonding layer. 18. The first conductive structure 20 and the second conductive structure 22 . The insulating auxiliary layer structure 14 is disposed on the insulating base layer 12. In one implementation, the insulating auxiliary layer structure 14 is, for example, a single-layer first insulating layer 24, and the first insulating layer 24 and the insulating base layer 12 have different coefficients of thermal expansion. Or different Young's modulus; and the thickness of the first insulating layer 24 is, for example, between 10 and 100 microns, and the thickness of the insulating bottom layer 12 is, for example, between 10 and 200 microns. But not limited thereto, in the embodiments shown later, the insulating auxiliary layer structure 14 may include multiple insulating layers.

The piezoelectric element 16 includes a piezoelectric material layer 26 , a first electrode 28 and a second electrode 30 . The piezoelectric material layer 26 includes a first surface 261, a second surface 262 and a side surface 263, the first surface 261 and the second surface 262 are opposite, the side surface 263 connects the first surface 261 and the second surface 262, and the second surface 262 includes the first part 262a, a second portion 262b and a third portion 262c, and the third portion 262c separates the first portion 262a and the second portion 262b. The first electrode 28 is extended on the first surface 261, part of the side surface 263 and the first part 262a of the second surface 262. In one embodiment, the piezoelectric material layer 26 is in the shape of a rectangular plate, for example, and the side surface 263 includes two opposite sides. Surfaces 263a, 263b, for example, the first electrode 28 extends 261 from the first surface, bends through one side of the surface 263a, and then bends to the first part 262a of the second surface 262, and is a continuous section with a slightly ㄈ shape. electrode structure. The second electrode 30 is disposed on the second portion 262 b of the second surface 262 . Wherein, the first electrode 28 located on the first surface 261 faces the insulating auxiliary layer structure 14 . In one embodiment, the thickness of the piezoelectric material layer 26 is, for example, between 50 and 300 μm, and the thickness of the first electrode 28 and the second electrode 30 is, for example, between 10 and 50 μm.

The bonding layer 18 is disposed on the auxiliary insulating layer structure 14 , and a portion of the first electrode 28 facing the auxiliary insulating layer structure 14 is bonded to the auxiliary insulating layer structure 14 . In one embodiment, as shown in FIG. 1 , in addition to being disposed between the first surface 261 of the piezoelectric material layer 26 and the insulating auxiliary layer structure 14 (for example, the first insulating layer 24 ), the bonding layer 18 also covers the undisposed There is a bottom edge portion of the other side surface 263 of the first electrode 28 and a bottom edge portion of the first electrode 28 covering the side surface 263a. In one embodiment, the thickness of the bonding layer 18 is, for example, between 10 and 200 microns, and the thermal expansion coefficient of the bonding layer 18 is greater than the thermal expansion coefficient of the first insulating layer 24/the piezoelectric material layer 26, or the bonding layer 18 The Young's modulus of is smaller than the Young's modulus of the first insulating layer 24 /the piezoelectric material layer 26 .

Continuing the above description, the first conductive structure 20 and the second conductive structure 22 are disposed on the insulating auxiliary layer structure 14 and located on two sides of the piezoelectric element 16 respectively. Wherein the first conductive structure 20 contains the first electrical The electrode connection area 201 and the first external connection terminal 202, and the first electrode connection area 201 is electrically connected to the first electrode 28, the second conductive structure 22 includes the second electrode connection area 221 and the second external connection terminal 222, and the second The electrode connection area 221 is electrically connected to the second electrode 30 . In one embodiment, as shown in FIG. 1 , part of the first conductive structure 20 stands up and contacts the first electrode 28 and part of the bonding layer 18 on the side surface 263a, and part of the second conductive structure 22 stands up and contacts the piezoelectric The other side surface 263 b of the material layer 26 and part of the adhesive layer 18 .

Also, as shown in FIG. 1 , the planar piezoelectric vibration module 10 further includes a protective layer 32 covering the piezoelectric element 16, part of the first conductive structure 20 and part of the second conductive structure 22, and exposing the first external connection terminal 202 and The second external connection terminal 222 . In one embodiment, the thickness of the protective layer 32 is, for example, between 2 and 500 microns, and the thermal expansion coefficient of the protective layer 32 is greater than that of the piezoelectric material layer 26, or the Young's modulus of the protective layer 32 is smaller than that of the piezoelectric material layer 26. Young's modulus of material layer 26 .

Fig. 2 is a schematic structural view of the planar piezoelectric vibration module of the second embodiment of the invention, as shown in Fig. 2, the planar piezoelectric vibration module 10A of the second embodiment and the planar piezoelectric vibration module 10 of the first embodiment The difference lies in the insulating auxiliary layer structure 14A of the planar piezoelectric vibration module 10A. In the planar piezoelectric vibration module 10A of the second embodiment, the insulating auxiliary layer structure 14A includes the first insulating layer 24, the second insulating layer 34 and the auxiliary bonding layer. layer 36, the second insulating layer 34 is located on the insulating bottom layer 12, the first insulating layer 24 is located on the second insulating layer 34, and the auxiliary bonding layer 36 is located on the first insulating layer 24, that is, the second insulating layer 34 and the auxiliary bonding layer 36 are respectively located on opposite sides of the first insulating layer 24; The materials can be the same or different.

In one embodiment, the thickness of the first insulating layer 24 of the planar piezoelectric vibration module 10A of the second embodiment is, for example, between 10 and 100 microns, compared with the planar piezoelectric vibration module of the first embodiment 10, the insulating auxiliary layer structure 14 has only a single-layer first insulating layer 24 configuration, the upper limit of the thickness of the first insulating layer 24 of the planar piezoelectric vibration module 10A of the second embodiment can be effectively reduced; the second insulating layer The thickness of 34 is, for example, between 10 and 200 microns, and the thickness of the auxiliary adhesive layer 36 is, for example, less than 50 microns.

Continuing the above description, as shown in FIG. 2 , the area of the auxiliary bonding layer 36 is smaller than the area of the first insulating layer 24 , and the structure of the piezoelectric element 16 has been disclosed in the first embodiment, and will not be repeated here. Part of the first electrode 28 facing the piezoelectric element 16 of the insulating auxiliary layer structure 14A is connected to the auxiliary adhesive layer 36 through the adhesive layer 18A. In one embodiment, the upper limit of the thickness of the adhesive layer 18A can also be smaller than that of the first embodiment. The upper limit of the thickness of the bonding layer 18 in the electric vibration module 10, the thickness of the bonding layer 18A is, for example, between 0.1 and 20 microns; and part of the first conductive structure 20 and part of the second conductive structure 22 are further located on the auxiliary bonding layer 36 The two sides are disposed on the first insulating layer 24 .

In the planar piezoelectric vibration modules 10 and 10A of the above-mentioned first and second embodiments, the first conductive structure 20/second conductive structure of the first electrode 28/second electrode 30 of the piezoelectric element 16 are electrically connected 22 is arranged on both sides of the piezoelectric element 16 in a slightly vertical structure, and is electrically connected to an external element (not shown in the figure) through the exposed first external connection end 202/second external connection end 222; this configuration For the entire planar piezoelectric vibration module 10/10A, since the upper and lower stacking of the first conductive structure 20/second conductive structure 22 is omitted, the thickness of the planar piezoelectric vibration module 10/10A can be effectively reduced, thereby reducing the thickness of the planar piezoelectric vibration module 10/10A. Thin efficacy.

In addition, in the second embodiment, the second insulating layer 34 is provided between the first insulating layer 24 and the insulating bottom layer 12, and the auxiliary bonding layer 36 is provided between the first insulating layer 24 and the bonding layer 18A, through the second The material selection of the insulating layer 34/auxiliary bonding layer 36 can make the two materials (such as the first insulating layer 24 and the insulating bottom layer 12, or the first insulating layer 24 and the bonding layer) with a larger coefficient of thermal expansion (or a smaller Young's coefficient) The layers 18A) are arranged at intervals to avoid the phenomenon that the coefficient of thermal expansion or Young's coefficient of the multilayer structure decreases or increases layer by layer, thereby reducing the problem of delamination or bending caused by deformation between the layers of the planar piezoelectric vibration module 10A, The reliability of the planar piezoelectric vibration module 10A and the stability of its sound pressure response are improved, thereby having the advantages of high reliability and good stability of sound pressure response.

Fig. 3 is a schematic diagram of the structure of the planar piezoelectric vibration module of the third embodiment of the present creation. The electrical element 40 , the bonding layer 18 , the first conductive structure 42 and the second conductive structure 44 . The insulating auxiliary layer structure 14 is disposed on the insulating base layer 12. In one implementation, the insulating auxiliary layer structure 14 is, for example, a single-layer first insulating layer 24, and the first insulating layer 24 and the insulating base layer 12 have different coefficients of thermal expansion. Or different Young's modulus; and the thickness of the first insulating layer 24 is, for example, between 10 and 100 microns, and the thickness of the insulating bottom layer 12 is, for example, between 10 and 200 microns. But not limited thereto, in subsequent embodiments, the insulating auxiliary layer structure 14 may include multiple insulating layers.

Continuing from the above description, the first conductive structure 42 is disposed in layers on the insulating auxiliary layer structure 14 , and the first conductive structure 42 includes a first electrode connection region 421 and a first external connection terminal 422 . In one embodiment, the first conductive structure 42 is a flat layered structure with a thickness of less than 50 microns; and the insulating filling layer 38 is disposed on the first conductive structure 42 and covers at least one side of the first conductive structure 42 to insulate The thickness of the filling layer 38 is, for example, between 10 and 200 microns.

The piezoelectric element 40 includes a piezoelectric material layer 46 , a first electrode 48 and a second electrode 50 . The piezoelectric material layer 46 includes a first surface 461, a second surface 462 and a side surface 463, the first surface 461 and the second surface 462 are opposite, and the side surface 463 connects the first surface 461 and the second surface 462; the first electrode 48 is provided with a first surface 461 , facing the insulating filling layer 38 ; the second electrode 50 is provided with a second surface 462 . In one embodiment, The thickness of the piezoelectric material layer 46 is, for example, between 50 and 300 μm, and the thickness of the first electrode 48 and the second electrode 50 is, for example, between 10 and 50 μm.

The next layer 18B is disposed on the insulating filling layer 38 corresponding to the position of the first electrode connection region 421 , and the first electrode 48 facing the insulating filling layer 38 is attached to the insulating filling layer 38 . In one embodiment, as shown in FIG. 3 , besides being disposed between the first surface 461 of the piezoelectric material layer 46 and the insulating filling layer 38 , the bonding layer 18B further covers the bottom edge portion of the side surface 463 . In one embodiment, the thickness of the bonding layer 18B is, for example, between 0.1 and 20 microns.

The second conductive structure 44 is disposed on one side of the piezoelectric element 40, and the second conductive structure 44 is isolated from the first conductive structure 42 by a part of the insulating filling layer 38. The second conductive structure 44 includes a second electrode connection region 441 and The second external connection end 442 , wherein the second electrode connection area 441 is electrically connected to the second electrode 50 . In one embodiment, the second conductive structure 44 is disposed on the insulating auxiliary layer structure 14 in a slightly vertical structure, located on one side of the piezoelectric element 40, and contacts the second electrode 50, part of the side surface 463, and part of the bonding layer 18B. And part of the insulating filling layer 38.

Also, as shown in FIG. 3, the planar piezoelectric vibration module 10B further includes a protective layer 32 covering the piezoelectric element 40, the bonding layer 18B and part of the second conductive structure 44, and exposing the first external connection terminal 422 and the second external Connection terminal 442 . In one embodiment, the thickness of the protective layer 32 is, for example, between 2 and 500 microns, and the thermal expansion coefficient of the protective layer 32 is greater than that of the piezoelectric material layer 46, or the Young's modulus of the protective layer 32 is smaller than that of the piezoelectric material layer 46. Young's modulus of material layer 46 .

In one embodiment, the above-mentioned insulating filling layer 38 and the bonding layer 18B can use the same insulating material. Fig. 4 is a schematic structural diagram of a planar piezoelectric vibration module of a fourth embodiment of the invention, wherein the insulating filling layer 38 and the subsequent layer 18B of the third embodiment are integrated into a subsequent filling layer 52, and the subsequent filling layer 52 is arranged on the first conductive structure 42 and cover at least one side of the first conductive structure 42, the second conductive structure 44 is isolated from the first conductive structure 42 by a part of the filling layer 52 . Furthermore, the structure of the piezoelectric element 40 has been disclosed in the third embodiment, and will not be repeated here. The first electrode 48 facing the first conductive structure 42 is connected to the first conductive structure 42 via the filling layer 52 .

On the other hand, as shown in FIG. 4 , compared with the auxiliary insulating layer structure 14 of the planar piezoelectric vibration module 10B, the auxiliary insulating layer structure 14B of the planar piezoelectric vibration module 10C further includes the auxiliary insulating layer structure 14B. Two insulating layers 34A, the material of the second insulating layer 34A is different from the material of the first insulating layer 24, the second insulating layer 34A is located on the insulating bottom layer 12, and the first insulating layer 24 is located on the second insulating layer 34A, that is, the second insulating layer The insulating layer 34A is disposed between the first insulating layer 24 and the insulating bottom layer 12 , and the first conductive structure 42 is located on the first insulating layer 24 .

Continuing the above description, in one embodiment, the thickness of the first insulating layer 24 is greater than the thickness of the second insulating layer 34A and the thickness of the first conductive structure 42, wherein the thickness of the second insulating layer 34A and the first conductive structure 42 can be They are respectively disposed on opposite sides of the first insulating layer 24 in a symmetrical manner for being the same or similar, wherein the thicknesses of the second insulating layer 34A and the first conductive structure 42 are, for example, less than 50 microns.

Fig. 5 is a schematic structural view of the planar piezoelectric vibration module of the fifth embodiment of the invention, as shown in Fig. 5, the planar piezoelectric vibration module 10D of the fifth embodiment and the planar piezoelectric vibration module 10B of the third embodiment The difference lies in the insulating auxiliary layer structure 14C of the planar piezoelectric vibration module 10D. In the planar piezoelectric vibration module 10D of the fifth embodiment, the insulating auxiliary layer structure 14C includes the first insulating layer 24, the second insulating layer 34A and the third insulating layer. insulating layer 54 . The third insulating layer 54, the second insulating layer 34A and the first insulating layer 24 are arranged on the insulating bottom layer 12 from bottom to top, wherein the third insulating layer 54 is arranged between the second insulating layer 34A and the insulating bottom layer 12, and the second insulating layer The material of the third insulating layer 54 is different from that of the second insulating layer 34A and the insulating bottom layer 12 .

Continuing the above description, in one embodiment, the thickness of the first insulating layer 24 is greater than the thickness of the second insulating layer 34A and the thickness of the first conductive structure 42, wherein the thickness of the second insulating layer 34A and the first conductive structure 42 can be For example, they are arranged on opposite sides of the first insulating layer 24 in a symmetrical manner for being the same or similar; and the thicknesses of the third insulating layer 54 and the insulating filling layer 38 may be the same or similar, and they are respectively arranged in a symmetrical manner for example. The outer side of the second insulating layer 34A and the outer side of the first conductive structure 42 .

According to the above, in the planar piezoelectric vibration module of the present invention, in the planar piezoelectric vibration module, the first conductive structure and the second conductive structure of the first electrode and the second electrode of the piezoelectric element are electrically connected One or both of them are slightly vertically arranged on one or both sides of the piezoelectric element; the upper and lower stacking of the first conductive structure and/or the second conductive structure can be omitted, so the planar piezoelectric vibration module can be effectively reduced thickness, and achieve the effect of thinning. In addition, through the selection and stacking of materials between layers, it is possible to reduce the delamination or bending problems caused by deformation between the layers of the planar piezoelectric vibration module, and improve the reliability and sound pressure response of the planar piezoelectric vibration module. stability, and has the advantages of high reliability and sound pressure response stability.

Although this creation has been disclosed above with the embodiment, it is not intended to limit this creation. Those with ordinary knowledge in the technical field of this creation can make some changes and modifications without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation should be defined by the scope of the attached patent application.

10: Planar piezoelectric vibration module

12: Insulation bottom layer

14: Insulation auxiliary layer structure

16: Piezoelectric element

18: Next layer

20: The first conductive structure

201: the first electrode connection area

202: the first external connection terminal

22: Second conductive structure

221: the second electrode connection area

222: the second external connection terminal

24: The first insulating layer

26: Piezoelectric material layer

261: first surface

262: second surface

262a: Part I

262b: Second part

262c: Part III

263: side

263a, 263b: side surfaces

28: The first electrode

30: Second electrode

32: protective layer

Claims (18)

A planar piezoelectric vibration module, comprising: an insulating bottom layer; An insulating auxiliary layer structure disposed on the insulating bottom layer; At least one piezoelectric element comprising: A piezoelectric material layer, comprising a first surface, a second surface and a side, the first surface and the second surface are opposite, the side connects the first surface and the second surface, the second surface comprises a a first part and a second part, and the first part and the second part are separated; a first electrode extended on the first surface, part of the side surface and the first part, wherein a part of the first electrode on the first surface faces the insulating auxiliary layer structure; and a second electrode disposed on the second portion; a bonding layer, disposed on the auxiliary insulation layer structure, and at least a part of the first electrode facing the auxiliary insulation layer structure is attached to the auxiliary insulation layer structure; and A first conductive structure and a second conductive structure are arranged on the insulating auxiliary layer structure and respectively located on both sides of the piezoelectric element, the first conductive structure includes a first electrode connection area and a first external connection terminal , the second conductive structure includes a second electrode connection area and a second external connection terminal, wherein the first electrode connection area is electrically connected to the first electrode, and the second electrode connection area is electrically connected to the second electrode. The planar piezoelectric vibration module according to claim 1 further comprises a protective layer covering the at least one piezoelectric element, part of the first conductive structure and part of the second conductive structure, and exposing the first The external connection terminal and the second external connection terminal. The planar piezoelectric vibration module according to Claim 1, wherein the insulating auxiliary layer structure and the insulating bottom layer have different thermal expansion coefficients or different Young's moduli. The planar piezoelectric vibration module as claimed in Claim 1, wherein the adhesive layer further covers a part of the side surface where the first electrode is not provided, and covers a part of the first electrode provided on a part of the side surface. The planar piezoelectric vibration module according to claim 1, wherein the insulating auxiliary layer structure includes a first insulating layer, and the first conductive structure, the second conductive structure and the bonding layer are located on the first insulating layer . The planar piezoelectric vibration module according to claim 1, wherein the insulating auxiliary layer structure includes: a first insulating layer, a second insulating layer and an auxiliary bonding layer, and the second insulating layer is located on the insulating bottom layer , the first insulating layer is located on the second insulating layer, and the auxiliary bonding layer is located on the first insulating layer. The planar piezoelectric vibration module according to claim 6, wherein the auxiliary bonding layer has an area smaller than that of the first insulating layer, and the part of the first electrode facing the structure of the insulating auxiliary layer is bonded to the first electrode via the bonding layer The auxiliary bonding layer, part of the first conductive structure and part of the second conductive structure are respectively located on two sides of the auxiliary bonding layer and disposed on the first insulating layer. The planar piezoelectric vibration module as claimed in claim 6, wherein the material of the second insulating layer and the auxiliary bonding layer is different from that of the first insulating layer. A planar piezoelectric vibration module, comprising: an insulating bottom layer; An insulating auxiliary layer structure disposed on the insulating bottom layer; A first conductive structure disposed on the insulating auxiliary layer structure in a layered form, the first conductive structure includes a first electrode connection region and a first external connection terminal; an insulating filling layer disposed on the first conductive structure and covering at least one side of the first conductive structure; At least one piezoelectric element comprising: A piezoelectric material layer comprising a first surface, a second surface and a side, the first surface and the second surface are opposite, and the side connects the first surface and the second surface; a first electrode disposed on the first surface and facing the insulating filling layer; and a second electrode disposed on the second surface; a bonding layer, corresponding to the first electrode connection region and disposed on the insulating filling layer, at least bonding the first electrode facing the insulating filling layer to the insulating filling layer; and A second conductive structure, disposed on one side of the insulating filling layer and the bonding layer, and isolated from the first conductive structure by a part of the insulating filling layer, the second conductive structure includes a second electrode connection region and A second external connection terminal, wherein the second electrode connection area is electrically connected to the second electrode. The planar piezoelectric vibration module as claimed in claim 9 further includes a protective layer covering the at least one piezoelectric element, the bonding layer and part of the second conductive structure. The planar piezoelectric vibration module as claimed in Claim 9, wherein the insulating auxiliary layer structure and the insulating bottom layer have different thermal expansion coefficients or different Young's moduli. The planar piezoelectric vibration module as claimed in claim 9, wherein the adhesive layer further covers part of the side surface of the piezoelectric material layer. The planar piezoelectric vibration module as claimed in claim 9, wherein the insulating auxiliary layer structure includes a first insulating layer, and the first conductive structure is located on the first insulating layer. The planar piezoelectric vibration module according to claim 9, wherein the auxiliary insulating layer structure includes a first insulating layer and a second insulating layer of different insulating materials, the second insulating layer is located on the insulating bottom layer, the The first insulating layer is located on the second insulating layer, and the first conductive structure is located on the first insulating layer. The planar piezoelectric vibration module as claimed in claim 14, wherein the thickness of the first insulating layer is greater than the thickness of the second insulating layer and the thickness of the first conductive structure. The planar piezoelectric vibration module according to claim 14, wherein the insulating filling layer and the bonding layer use the same insulating material. The planar piezoelectric vibration module as claimed in claim 14 further comprises a third insulating layer disposed between the second insulating layer and the insulating bottom layer, wherein the material of the third insulating layer is different from that of the second insulating layer layer and the material of the insulating bottom layer. The planar piezoelectric vibration module according to claim 17, wherein the third insulating layer and the insulating filling layer use the same insulating material.

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