TWM639850U - Plane piezoelectric vibration module - Google Patents
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本創作是有關於一種壓電振動模組的結構,尤其是有關於一種平面壓電振動模組的結構。This creation is about the structure of a piezoelectric vibration module, especially about the structure of a planar piezoelectric vibration module.
在聲音重現環境中,有許多因素可能降低聽者所感覺之重現音的品質,而顯示出重現音與原始聲段的差別。其中一種因素是聲音系統中的平面喇叭變形所導致音頻譜上之聲壓響應扭曲。In the context of sound reproduction, there are many factors that can degrade the quality of the reproduced sound perceived by the listener, showing the difference between the reproduced sound and the original sound segment. One such factor is the distortion of the sound pressure response across the audio spectrum by distortion of the planar speakers in the sound system.
由於平面喇叭的需求隨著電子產品市場而快速增加。而如何確保聲音的音質,又能兼具足夠薄度及品質,以利內建到電子產品中,遂成為新喇叭產品(例如平面壓電振動模組)的技術發展重點。Due to the rapid increase in the demand for flat speakers along with the electronic product market. And how to ensure the sound quality of the sound, but also have enough thinness and quality to facilitate the built-in electronic products, has become the technical development focus of new speaker products (such as planar piezoelectric vibration modules).
本創作提供一種平面壓電振動模組,具有可靠性高且聲壓響應穩定性佳的優點。This creation provides a planar piezoelectric vibration module, which has the advantages of high reliability and good stability of sound pressure response.
本創作所提供的平面壓電振動模組,包含導電層、壓電元件以及接著層。導電層包含第一導電區、第二導電區以及絕緣槽,絕緣槽開設於第一導電區與第二導電區之間;壓電元件包含壓電材料層;接著層設置於導電層與壓電元件之間,以將壓電元件固設於第一導電區;其中接著層的熱膨脹係數大於導電層的熱膨脹係數與壓電材料層的熱膨脹係數。The planar piezoelectric vibration module provided by this creation includes a conductive layer, a piezoelectric element, and a bonding layer. The conductive layer includes a first conductive area, a second conductive area, and an insulating groove, and the insulating groove is opened between the first conductive area and the second conductive area; the piezoelectric element includes a piezoelectric material layer; the next layer is arranged between the conductive layer and the piezoelectric Between the elements, the piezoelectric element is fixed on the first conductive area; wherein the thermal expansion coefficient of the bonding layer is greater than the thermal expansion coefficient of the conductive layer and the thermal expansion coefficient of the piezoelectric material layer.
本創作所提供的平面壓電振動模組,包含導電層、壓電元件以及接著層。導電層包含第一導電區、第二導電區以及絕緣槽,絕緣槽開設於第一導電區與第二導電區之間;壓電元件包含壓電材料層;接著層設置於導電層與壓電元件之間,以將壓電元件固設於第一導電區;其中接著層的楊氏係數小於導電層的楊氏係數與壓電材料層的楊氏係數。The planar piezoelectric vibration module provided by this creation includes a conductive layer, a piezoelectric element, and a bonding layer. The conductive layer includes a first conductive area, a second conductive area, and an insulating groove, and the insulating groove is opened between the first conductive area and the second conductive area; the piezoelectric element includes a piezoelectric material layer; the next layer is arranged between the conductive layer and the piezoelectric Between the elements, the piezoelectric element is fixed in the first conductive area; wherein the Young's modulus of the bonding layer is smaller than the Young's modulus of the conductive layer and the Young's modulus of the piezoelectric material layer.
在本創作的一實施例中,上述之平面壓電振動模組更包含保護層,保護層覆蓋壓電元件,保護層的熱膨脹係數大於壓電材料層的熱膨脹係數。或者於一實施例中,保護層的楊氏係數小於壓電材料層的楊氏係數。In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a protective layer covering the piezoelectric element, and the thermal expansion coefficient of the protective layer is greater than that of the piezoelectric material layer. Or in one embodiment, the Young's modulus of the protective layer is smaller than the Young's modulus of the piezoelectric material layer.
在本創作的一實施例中,上述之平面壓電振動模組更包含絕緣填充層,絕緣填充層設置於導電層與保護層之間,並環繞壓電元件。In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes an insulating filling layer, and the insulating filling layer is disposed between the conductive layer and the protective layer and surrounds the piezoelectric element.
在本創作的一實施例中,上述之平面壓電振動模組更包含絕緣底層,絕緣底層設置於導電層相對於接著層的另側,絕緣底層的楊氏係數小於導電層的楊氏係數。In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes an insulating bottom layer, the insulating bottom layer is disposed on the other side of the conductive layer relative to the bonding layer, and the Young's modulus of the insulating bottom layer is smaller than that of the conductive layer.
在本創作的一實施例中,上述之平面壓電振動模組更包含第一輔助層,第一輔助層設置於絕緣底層之相對於導電層的另側,使絕緣底層介於導電層及第一輔助層之間,第一輔助層的材質為絕緣材料。In an embodiment of the present creation, the above-mentioned planar piezoelectric vibration module further includes a first auxiliary layer, and the first auxiliary layer is disposed on the other side of the insulating bottom layer relative to the conductive layer, so that the insulating bottom layer is interposed between the conductive layer and the first auxiliary layer. Between the auxiliary layers, the material of the first auxiliary layer is insulating material.
在本創作的一實施例中,上述之第一導電區設有開孔,接著層更填設於開孔中,以連接絕緣底層,其中接著層的熱膨脹係數大於絕緣底層的熱膨脹係數。或者於一實施例中,接著層的楊氏係數小於第一輔助層的楊氏係數。In an embodiment of the present invention, the above-mentioned first conductive region is provided with an opening, and the subsequent layer is further filled in the opening to connect the insulating bottom layer, wherein the thermal expansion coefficient of the bonding layer is greater than that of the insulating bottom layer. Alternatively, in one embodiment, the Young's modulus of the bonding layer is smaller than that of the first auxiliary layer.
在本創作的一實施例中,上述之平面壓電振動模組更包含第二輔助層,第二輔助層設置於第一輔助層與絕緣底層之間,第一輔助層的楊氏係數小於第二輔助層的楊氏係數。In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a second auxiliary layer, the second auxiliary layer is disposed between the first auxiliary layer and the insulating bottom layer, and the Young's modulus of the first auxiliary layer is smaller than that of the first auxiliary layer. Young's modulus of the second auxiliary layer.
在本創作的一實施例中,上述之第二輔助層的材質與導電層的材質相同。In an embodiment of the present invention, the above-mentioned second auxiliary layer is made of the same material as the conductive layer.
在本創作的一實施例中,上述之平面壓電振動模組更包含導電線路,壓電元件更包含第一電極層及第二電極層,壓電材料層具有第一側、第二側以及側面,側面連接第一側與第二側,第一側面向接著層,第一電極層及第二電極層分別設置於第一側及第二側,導電線路電性連接第二導電區與第二電極層。In an embodiment of the present creation, the above-mentioned planar piezoelectric vibration module further includes a conductive circuit, the piezoelectric element further includes a first electrode layer and a second electrode layer, and the piezoelectric material layer has a first side, a second side and The side surface, the side surface is connected to the first side and the second side, the first side faces the bonding layer, the first electrode layer and the second electrode layer are respectively arranged on the first side and the second side, and the conductive line is electrically connected to the second conductive region and the second side. Two electrode layers.
在本創作的一實施例中,上述之平面壓電振動模組更包含有封裝材料層,封裝材料層至少包覆部分第一側與部分側面。In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a packaging material layer, and the packaging material layer covers at least part of the first side and part of the side surfaces.
本創作因將平面壓電振動模組中,熱膨脹係數小或是楊氏係數大的兩材料間隔地設置,可避免多層結構的熱膨脹係數或楊氏係數具有逐層遞減或遞增的現象,從而減少平面壓電振動模組各層間因變形導致的分層或是彎曲問題,改善平面壓電振動模組的可靠性與其聲壓響應的穩定性,而具有可靠性高且聲壓響應穩定性佳的優點。In this creation, the two materials with small thermal expansion coefficients or large Young's coefficients in the planar piezoelectric vibration module are arranged at intervals, which can avoid the phenomenon that the thermal expansion coefficient or Young's coefficient of the multilayer structure decreases or increases layer by layer, thereby reducing The problem of delamination or bending caused by deformation between the layers of the planar piezoelectric vibration module improves the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response, and has high reliability and good sound pressure response stability. advantage.
為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other purposes, features and advantages of the invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1是本創作一第一實施例平面壓電振動模組的結構示意圖,如圖1所示,平面壓電膜組10包含導電層11、壓電元件12以及接著層13。導電層11包含第一導電區111、第二導電區112以及絕緣槽113,絕緣槽113開設於第一導電區111與第二導電區112之間,於一實施例中,絕緣槽113貫穿導電層11,使第一導電區111及第二導電區112分隔;壓電元件12包含壓電材料層121;接著層13設置於導電層11與壓電元件12之間,於一實施例中,接著層13為設置在導電層11的第一導電區111上,藉由接著層13將壓電元件12固設於第一導電區111;其中接著層13的熱膨脹係數(thermal expansion coefficient,CTE)大於導電層11的熱膨脹係數與壓電材料層121的熱膨脹係數。具體而言,接著層13的熱膨脹係數例如為介於50至200 ppm之間,較佳者為85至90 ppm之間;導電層11的熱膨脹係數例如為介於5至30 ppm之間,較佳者為14至18 ppm之間;壓電材料層121的熱膨脹係數例如為介於1至5 ppm之間,較佳者介於2至4 ppm之間。FIG. 1 is a schematic structural diagram of a planar piezoelectric vibration module according to a first embodiment of the present invention. As shown in FIG. 1 , a planar
其中,導電層11的厚度例如小於50微米;壓電元件12之壓電材料層121的厚度例如介於50至300微米之間;接著層13的厚度則例如介於0.1至20微米之間。Wherein, the thickness of the
接續上述說明,於一實施例中,壓電元件12除了包含壓電材料層121之外,更包含第一電極層122、第二電極層123及封裝材料層124。壓電材料層121具有第一側1211、第二側1212以及側面1213,第一側1211及第二側1212相對,側面1213連接第一側1211與第二側1212;第一電極層122及第二電極層123分別設置於第一側1211及第二側1212。當壓電元件12經由接著層13固設於導電層11的第一導電區111時,壓電材料層121的例如第一側1211面向接著層13,亦即第一電極層122與接著層13固接在一起;封裝材料層124包覆壓電材料層121的部分側面1213以及第一電極層122的周緣,且部分的封裝材料層124更與接著層13相互固接;於又一實施例中,封裝材料層124可與接著層13使用相同的材質。其中,第一電極層122及第二電極層123的厚度例如介於1至50微米之間。Continuing the above description, in one embodiment, the
接續上述說明,如圖1所示,平面壓電振動模組10更包含絕緣填充層15,設置於導電層11上且環設於壓電元件12的周緣,其中部分絕緣填充層15並填入絕緣槽113,加強第一導電區111及第二導電區112的絕緣效果。於一實施例中,如圖1所示,第一導電區111及第二導電區112上皆設置有絕緣填充層15,且絕緣填充層15可例如環設於接著層13的周緣以及封裝材料層124的周緣,其中在絕緣填充層15對應第二導電區112的位置形成有貫穿通道151。於一實施例中,位於導電層11上之絕緣填充層15的厚度例如介於10至200微米之間。Continuing the above description, as shown in FIG. 1 , the planar
又,於一實施例中,平面壓電振動模組10更包含有導電線路19及保護層14,具體而言,如圖1所示,導電線路19經由穿設過絕緣填充層15的貫穿通道151,而電性連接第二導電區112及設置於第二側1212的第二電極層123。保護層14覆蓋壓電元件12,具體而言,如圖1所示,保護層14設置於絕緣填充層15上,且覆蓋壓電元件12及導電線路19,換句話說,絕緣填充層15設置於導電層11與保護層14之間。其中,保護層14的熱膨脹係數大於壓電元件12之壓電材料層121的熱膨脹係數,具體而言,保護層14的熱膨脹係數例如為介於50至200 ppm之間,較佳者介於75至80 ppm之間。又保護層14的厚度例如介於2至500微米之間。Moreover, in one embodiment, the planar
在圖1所示之第一實施例平面壓電振動模組10中,導電層11、接著層13、第二電極層123、壓電材料層121、第一電極層122及保護層14由下而上依序排列,其中由於第一電極層122及第二電極層123的厚度非常薄,在不考慮第一電極層122及第二電極層123之熱膨脹係數的前提下,導電層11、接著層13、壓電材料層121及保護層14之熱膨脹係數的排列依序為低熱膨脹係數、高熱膨脹係數、低熱膨脹係數及高熱膨脹係數,亦即高熱膨脹係數的材料及低熱膨脹係數的材料交錯排列。In the planar
可以理解地,對於大部分材料而言,熱膨脹係數越大,則楊氏係數(Young's modulus)越小,於一實施例中,接著層13的楊氏係數小於導電層11的楊氏係數與壓電材料層121的楊氏係數。具體而言,導電層11的楊氏係數例如為介於100至140 GPa之間,較佳者介於110至120 GPa之間;接著層13的楊氏係數例如為介於0.1至5 GPa之間,較佳者介於0.3至2 GPa之間;壓電材料層121的楊氏係數例如為介於50至80 GPa之間,較佳者介於65至70 GPa之間。而保護層14的楊氏係數例如為介於0.1至5 GPa之間,較佳者介於0.3至2 GPa之間。亦即在圖1所示之第一實施例平面壓電振動模組10中,導電層11、接著層13、壓電材料層121及保護層14之楊氏係數的排列依序為高楊氏係數、低楊氏係數、高楊氏係數及低楊氏係數,亦即低楊氏係數的材料及高楊氏係數的材料交錯排列。It can be understood that for most materials, the larger the coefficient of thermal expansion, the smaller the Young's modulus. In one embodiment, the Young's modulus of the
圖2是本創作一第二實施例平面壓電振動模組的結構示意圖,如圖2所示,第二實施例平面壓電振動模組10A與第一實施例平面壓電振動模組10的差異在於平面壓電振動模組10A更包含絕緣底層16,絕緣底層16設置於導電層11相對於接著層13的另側。絕緣底層16的材料例如為玻璃纖維環氧層壓板(FR4)、玻璃、PET或聚醯亞胺(PI)等材料或其組合。又絕緣底層16的厚度例如為介於10至100微米之間,絕緣底層16可提供予平面壓電振動模組10A一支撐功效。於一實施例中,絕緣底層16的楊氏係數小於導電層11的楊氏係數,絕緣底層16的楊氏係數例如為介於10至30 GPa之間,較佳者介於15至20 GPa之間。Fig. 2 is a schematic structural view of the planar piezoelectric vibration module of the second embodiment of the present creation, as shown in Fig. 2, the planar
圖3是本創作一第三實施例平面壓電振動模組的結構示意圖,如圖3所示,第三實施例平面壓電振動模組10B與第二實施例平面壓電振動模組10A的差異在於平面壓電振動模組10B更包含第一輔助層17及第二輔助層18。第一輔助層17設置於絕緣底層16之相對於導電層11的另側,使絕緣底層16介於導電層11及第一輔助層17之間;第二輔助層18設置於第一輔助層17與絕緣底層16之間,亦即第一輔助層17、第二輔助層18、絕緣底層16及導電層11由下而上依序排列。其中,於一實施例中,絕緣底層16的楊氏係數小於導電層11的楊氏係數,也小於第二輔助層18的楊氏係數,亦即第二輔助層18、絕緣底層16及導電層11之楊氏係數的排列依序為高楊氏係數、低楊氏係數、高楊氏係數。配合著上述接著層13、壓電材料層121及保護層14的楊氏係數,依序堆疊的各材料的楊氏係數一高一低交錯。Fig. 3 is a schematic structural view of the planar piezoelectric vibration module of the third embodiment of the invention, as shown in Fig. 3, the planar
其中,第一輔助層17的厚度例如介於10至200微米間;第二輔助層18的厚度例如小於50微米。於一未繪示的實施例中,亦可省略第二輔助層18的設置。Wherein, the thickness of the first
圖4是本創作一第四實施例平面壓電振動模組的結構示意圖,如圖4所示,第四實施例平面壓電振動模組10C與第三實施例平面壓電振動模組10B的差異在於平面壓電振動模組10C中,導電層11的第一導電區111設有一開孔20,開孔20的位置例如為對應壓電元件12的預設位置,且開孔20的內徑d小於壓電元件12的外徑D,當壓電元件12經由接著層13A固設於導電層11的第一導電區111上時,接著層13A固更填設於開孔20中,如圖4所示,於一實施例中,部分的接著層13A固接於導電層11下方的絕緣底層16。其中接著層13A的熱膨脹係數大於絕緣底層16的熱膨脹係數,如前所述地,接著層13A的熱膨脹係數例如為介於85至90 ppm之間,而絕緣底層16的熱膨脹係數例如為介於9至13 ppm之間。Fig. 4 is a schematic structural view of the planar piezoelectric vibration module of the fourth embodiment of the invention, as shown in Fig. 4, the planar
圖5是本創作一第五實施例平面壓電振動模組的結構示意圖,如圖5所示,第五實施例平面壓電振動模組10D與第三實施例平面壓電振動模組10B的差異在於平面壓電振動模組10D中,壓電元件12的個數不限於一個,如圖5所示,壓電元件12的個數例如為兩個,兩壓電元件12、12'上下間隔設置,又兩壓電元件12、12'的封裝材料層124採用與接著層13相同的材質,換句話說,接著層13除了將下方的壓電元件12固設於導電層11的第一導電區111之外,更包覆下方壓電元件12的周緣及上方壓電元件12'的一部分周緣,且填充於兩壓電元件12、12'之間的間隙22。又上述之導電線路19並連接上方壓電元件12'之遠離下方壓電元件12的一第二電極層123至導電層11的第二導電區112。於一實施例中,亦可省略第二輔助層18的設置。Fig. 5 is a schematic structural view of the planar piezoelectric vibration module of the fifth embodiment of the invention. As shown in Fig. 5, the fifth embodiment of the planar
在第五實施例中,是以第三實施例平面壓電振動模組10B的配置搭配兩壓電元件12、12'進行說明,惟不限於此,於其他未繪示的實施例中,兩壓電元件12、12'的配置亦可應用於第一實施例平面壓電振動模組(亦即省略第一輔助層、第二輔助層及絕緣底層)、應用於第二實施例平面壓電振動模組(亦即省略第一輔助層及第二輔助層)、或應用於第四實施例平面壓電振動模組(亦即第一導電區具有開孔)中。In the fifth embodiment, the configuration of the planar
在本創作實施例中,將熱膨脹係數較小或是楊氏係數較大的兩材料間隔地設置,可避免多層結構的熱膨脹係數或楊氏係數具有逐層遞減或遞增的現象,從而減少平面壓電振動模組各層間因變形導致的分層或是彎曲問題,改善平面壓電振動模組的可靠性與其聲壓響應的穩定性,而具有可靠性高且聲壓響應穩定性佳的優點。In this creative embodiment, the two materials with smaller thermal expansion coefficients or larger Young's coefficients are arranged at intervals, which can avoid the phenomenon that the thermal expansion coefficients or Young's coefficients of the multilayer structure decrease or increase layer by layer, thereby reducing the plane pressure. The delamination or bending problem caused by deformation between the layers of the electric vibration module improves the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response, and has the advantages of high reliability and good sound pressure response stability.
雖然本創作已以實施例揭露如上,然其並非用以限定本創作,本創作所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作些許之更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although this creation has been disclosed above with the embodiment, it is not intended to limit this creation. Those with ordinary knowledge in the technical field of this creation can make some changes and modifications without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation should be defined by the scope of the attached patent application.
10、10A、10B、10C、10D:平面壓電振動模組
11:導電層
111:第一導電區
112:第二導電區
113:絕緣槽
12、12':壓電元件
121:壓電材料層
1211:第一側
1212:第二側
1213:側面
122:第一電極層
123:第二電極層
124:封裝材料層
13、13A:接著層
14:保護層
15:絕緣填充層
151: 貫穿通道
16:絕緣底層
17:第一輔助層
18:第二輔助層
19:導電線路
20:開孔
d:內徑
D:外徑
22:間隙
10, 10A, 10B, 10C, 10D: planar piezoelectric vibration module
11: Conductive layer
111: the first conductive area
112: the second conductive area
113:
圖1是本創作一第一實施例平面壓電振動模組的結構示意圖。 圖2是本創作一第二實施例平面壓電振動模組的結構示意圖。 圖3是本創作一第三實施例平面壓電振動模組的結構示意圖。 圖4是本創作一第四實施例平面壓電振動模組的結構示意圖。 圖5是本創作一第五實施例平面壓電振動模組的結構示意圖。 FIG. 1 is a schematic structural diagram of a planar piezoelectric vibration module according to a first embodiment of the invention. Fig. 2 is a schematic structural diagram of a planar piezoelectric vibration module according to a second embodiment of the invention. FIG. 3 is a schematic structural view of a planar piezoelectric vibration module according to a third embodiment of the invention. Fig. 4 is a schematic structural diagram of a planar piezoelectric vibration module according to a fourth embodiment of the invention. Fig. 5 is a schematic structural diagram of a planar piezoelectric vibration module according to a fifth embodiment of the invention.
10:平面壓電振動模組 10: Planar piezoelectric vibration module
11:導電層 11: Conductive layer
111:第一導電區 111: the first conductive area
112:第二導電區 112: the second conductive area
113:絕緣槽 113: insulation groove
12:壓電元件 12: Piezoelectric element
121:壓電材料層 121: piezoelectric material layer
1211:第一側 1211: first side
1212:第二側 1212: second side
1213:側面 1213: side
122:第一電極層 122: the first electrode layer
123:第二電極層 123: Second electrode layer
124:封裝材料層 124: Packaging material layer
13:接著層 13:The next layer
14:保護層 14: Protective layer
15:絕緣填充層 15: Insulation filling layer
151:貫穿通道 151: through the channel
19:導電線路 19: Conductive circuit
Claims (20)
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