TWM639850U - Plane piezoelectric vibration module - Google Patents

Abstract

A plane piezoelectric vibration module includes a conductive layer, a piezoelectric element and an adhesive layer. The conductive layer includes a first conductive area, a second conductive area and an insulating groove, and the insulating groove is arranged between the first conductive area and the second conductive area; the piezoelectric element includes a piezoelectric material layer. The adhesive layer is disposed between the conductive layer and the piezoelectric element, so as to fix the piezoelectric element on the first conductive area. The thermal expansion coefficient of the adhesive layer is greater than the thermal expansion coefficient of the conductive layer and the thermal expansion coefficient of the piezoelectric material layer, or the Young's modulus of the adhesive layer is smaller than the Young's modulus of the conductive layer and the Young's modulus of the piezoelectric material layer. Disposing two materials with small thermal expansion coefficients or large Young's modulus at intervals can reduce the problem of delamination or bending caused by deformation between the layers of the planar piezoelectric vibration module, and improve the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response.

Description

Planar piezoelectric vibration module

This creation is about the structure of a piezoelectric vibration module, especially about the structure of a planar piezoelectric vibration module.

In the context of sound reproduction, there are many factors that can degrade the quality of the reproduced sound perceived by the listener, showing the difference between the reproduced sound and the original sound segment. One such factor is the distortion of the sound pressure response across the audio spectrum by distortion of the planar speakers in the sound system.

Due to the rapid increase in the demand for flat speakers along with the electronic product market. And how to ensure the sound quality of the sound, but also have enough thinness and quality to facilitate the built-in electronic products, has become the technical development focus of new speaker products (such as planar piezoelectric vibration modules).

This creation provides a planar piezoelectric vibration module, which has the advantages of high reliability and good stability of sound pressure response.

The planar piezoelectric vibration module provided by this creation includes a conductive layer, a piezoelectric element, and a bonding layer. The conductive layer includes a first conductive area, a second conductive area, and an insulating groove, and the insulating groove is opened between the first conductive area and the second conductive area; the piezoelectric element includes a piezoelectric material layer; the next layer is arranged between the conductive layer and the piezoelectric Between the elements, the piezoelectric element is fixed on the first conductive area; wherein the thermal expansion coefficient of the bonding layer is greater than the thermal expansion coefficient of the conductive layer and the thermal expansion coefficient of the piezoelectric material layer.

The planar piezoelectric vibration module provided by this creation includes a conductive layer, a piezoelectric element, and a bonding layer. The conductive layer includes a first conductive area, a second conductive area, and an insulating groove, and the insulating groove is opened between the first conductive area and the second conductive area; the piezoelectric element includes a piezoelectric material layer; the next layer is arranged between the conductive layer and the piezoelectric Between the elements, the piezoelectric element is fixed in the first conductive area; wherein the Young's modulus of the bonding layer is smaller than the Young's modulus of the conductive layer and the Young's modulus of the piezoelectric material layer.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a protective layer covering the piezoelectric element, and the thermal expansion coefficient of the protective layer is greater than that of the piezoelectric material layer. Or in one embodiment, the Young's modulus of the protective layer is smaller than the Young's modulus of the piezoelectric material layer.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes an insulating filling layer, and the insulating filling layer is disposed between the conductive layer and the protective layer and surrounds the piezoelectric element.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes an insulating bottom layer, the insulating bottom layer is disposed on the other side of the conductive layer relative to the bonding layer, and the Young's modulus of the insulating bottom layer is smaller than that of the conductive layer.

In an embodiment of the present creation, the above-mentioned planar piezoelectric vibration module further includes a first auxiliary layer, and the first auxiliary layer is disposed on the other side of the insulating bottom layer relative to the conductive layer, so that the insulating bottom layer is interposed between the conductive layer and the first auxiliary layer. Between the auxiliary layers, the material of the first auxiliary layer is insulating material.

In an embodiment of the present invention, the above-mentioned first conductive region is provided with an opening, and the subsequent layer is further filled in the opening to connect the insulating bottom layer, wherein the thermal expansion coefficient of the bonding layer is greater than that of the insulating bottom layer. Alternatively, in one embodiment, the Young's modulus of the bonding layer is smaller than that of the first auxiliary layer.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a second auxiliary layer, the second auxiliary layer is disposed between the first auxiliary layer and the insulating bottom layer, and the Young's modulus of the first auxiliary layer is smaller than that of the first auxiliary layer. Young's modulus of the second auxiliary layer.

In an embodiment of the present invention, the above-mentioned second auxiliary layer is made of the same material as the conductive layer.

In an embodiment of the present creation, the above-mentioned planar piezoelectric vibration module further includes a conductive circuit, the piezoelectric element further includes a first electrode layer and a second electrode layer, and the piezoelectric material layer has a first side, a second side and The side surface, the side surface is connected to the first side and the second side, the first side faces the bonding layer, the first electrode layer and the second electrode layer are respectively arranged on the first side and the second side, and the conductive line is electrically connected to the second conductive region and the second side. Two electrode layers.

In an embodiment of the present invention, the above-mentioned planar piezoelectric vibration module further includes a packaging material layer, and the packaging material layer covers at least part of the first side and part of the side surfaces.

In this creation, the two materials with small thermal expansion coefficients or large Young's coefficients in the planar piezoelectric vibration module are arranged at intervals, which can avoid the phenomenon that the thermal expansion coefficient or Young's coefficient of the multilayer structure decreases or increases layer by layer, thereby reducing The problem of delamination or bending caused by deformation between the layers of the planar piezoelectric vibration module improves the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response, and has high reliability and good sound pressure response stability. advantage.

In order to make the above and other purposes, features and advantages of the invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic structural diagram of a planar piezoelectric vibration module according to a first embodiment of the present invention. As shown in FIG. 1 , a planar piezoelectric film set 10 includes a conductive layer 11 , a piezoelectric element 12 and an adhesive layer 13 . The conductive layer 11 includes a first conductive region 111, a second conductive region 112 and an insulating groove 113. The insulating groove 113 is opened between the first conductive region 111 and the second conductive region 112. In one embodiment, the insulating groove 113 runs through the conductive The layer 11 separates the first conductive region 111 and the second conductive region 112; the piezoelectric element 12 includes a piezoelectric material layer 121; and then the layer 13 is disposed between the conductive layer 11 and the piezoelectric element 12. In one embodiment, The following layer 13 is disposed on the first conductive region 111 of the conductive layer 11, and the piezoelectric element 12 is fixed on the first conductive region 111 through the following layer 13; wherein the thermal expansion coefficient (thermal expansion coefficient, CTE) of the following layer 13 It is greater than the thermal expansion coefficient of the conductive layer 11 and the thermal expansion coefficient of the piezoelectric material layer 121 . Specifically, the thermal expansion coefficient of the bonding layer 13 is, for example, between 50 and 200 ppm, preferably between 85 and 90 ppm; the thermal expansion coefficient of the conductive layer 11 is, for example, between 5 and 30 ppm, relatively Preferably, it is between 14-18 ppm; the thermal expansion coefficient of the piezoelectric material layer 121 is, for example, between 1-5 ppm, preferably between 2-4 ppm.

Wherein, the thickness of the conductive layer 11 is, for example, less than 50 microns; the thickness of the piezoelectric material layer 121 of the piezoelectric element 12 is, for example, between 50 and 300 microns; and the thickness of the bonding layer 13 is, for example, between 0.1 and 20 microns.

Continuing the above description, in one embodiment, the piezoelectric element 12 further includes a first electrode layer 122 , a second electrode layer 123 and an encapsulation material layer 124 in addition to the piezoelectric material layer 121 . The piezoelectric material layer 121 has a first side 1211, a second side 1212 and a side 1213, the first side 1211 and the second side 1212 are opposite, and the side 1213 connects the first side 1211 and the second side 1212; the first electrode layer 122 and the second side The two electrode layers 123 are respectively disposed on the first side 1211 and the second side 1212 . When the piezoelectric element 12 is fixed on the first conductive region 111 of the conductive layer 11 via the bonding layer 13, for example, the first side 1211 of the piezoelectric material layer 121 faces the bonding layer 13, that is, the first electrode layer 122 and the bonding layer 13 affixed together; the encapsulation material layer 124 covers part of the side surface 1213 of the piezoelectric material layer 121 and the periphery of the first electrode layer 122, and part of the encapsulation material layer 124 is further affixed to the bonding layer 13; in yet another embodiment Among them, the packaging material layer 124 can use the same material as the bonding layer 13 . Wherein, the thickness of the first electrode layer 122 and the second electrode layer 123 is, for example, between 1 and 50 microns.

Continuing the above description, as shown in FIG. 1 , the planar piezoelectric vibration module 10 further includes an insulating filling layer 15 disposed on the conductive layer 11 and surrounding the periphery of the piezoelectric element 12 , wherein part of the insulating filling layer 15 is filled with The insulation groove 113 strengthens the insulation effect of the first conductive region 111 and the second conductive region 112 . In one embodiment, as shown in FIG. 1 , an insulating filling layer 15 is disposed on the first conductive region 111 and the second conductive region 112, and the insulating filling layer 15 can, for example, be arranged around the periphery of the bonding layer 13 and the packaging material On the periphery of the layer 124 , a through channel 151 is formed at the position of the insulating filling layer 15 corresponding to the second conductive region 112 . In one embodiment, the thickness of the insulating filling layer 15 on the conductive layer 11 is, for example, between 10 and 200 microns.

Moreover, in one embodiment, the planar piezoelectric vibration module 10 further includes a conductive circuit 19 and a protective layer 14. Specifically, as shown in FIG. 151 , so as to electrically connect the second conductive region 112 and the second electrode layer 123 disposed on the second side 1212 . The protective layer 14 covers the piezoelectric element 12. Specifically, as shown in FIG. between the conductive layer 11 and the protective layer 14 . Wherein, the thermal expansion coefficient of the protective layer 14 is greater than the thermal expansion coefficient of the piezoelectric material layer 121 of the piezoelectric element 12. Specifically, the thermal expansion coefficient of the protective layer 14 is, for example, between 50 and 200 ppm, preferably between 75 to 80 ppm. The thickness of the protection layer 14 is, for example, between 2 and 500 microns.

In the planar piezoelectric vibration module 10 of the first embodiment shown in FIG. And the top is arranged sequentially, wherein because the thickness of the first electrode layer 122 and the second electrode layer 123 is very thin, under the premise of not considering the thermal expansion coefficient of the first electrode layer 122 and the second electrode layer 123, the conductive layer 11, then The thermal expansion coefficients of layer 13, piezoelectric material layer 121 and protective layer 14 are arranged in order of low thermal expansion coefficient, high thermal expansion coefficient, low thermal expansion coefficient and high thermal expansion coefficient, that is, materials with high thermal expansion coefficient and materials with low thermal expansion coefficient are interlaced arrangement.

It can be understood that for most materials, the larger the coefficient of thermal expansion, the smaller the Young's modulus. In one embodiment, the Young's modulus of the bonding layer 13 is smaller than the Young's modulus of the conductive layer 11 and the compressive force. Young's modulus of the electrical material layer 121 . Specifically, the Young's modulus of the conductive layer 11 is, for example, between 100 and 140 GPa, preferably between 110 and 120 GPa; the Young's modulus of the following layer 13 is, for example, between 0.1 and 5 GPa. between, preferably between 0.3 and 2 GPa; the Young's modulus of the piezoelectric material layer 121 is, for example, between 50 and 80 GPa, preferably between 65 and 70 GPa. The Young's modulus of the protective layer 14 is, for example, between 0.1 and 5 GPa, preferably between 0.3 and 2 GPa. That is to say, in the planar piezoelectric vibration module 10 of the first embodiment shown in FIG. 1 , the arrangement of the Young's modulus of the conductive layer 11 , the bonding layer 13 , the piezoelectric material layer 121 and the protective layer 14 is high Young's modulus. Modulus, low Young's modulus, high Young's modulus, and low Young's modulus, that is, materials with low Young's modulus and materials with high Young's modulus are arranged alternately.

Fig. 2 is a schematic structural view of the planar piezoelectric vibration module of the second embodiment of the present creation, as shown in Fig. 2, the planar piezoelectric vibration module 10A of the second embodiment and the planar piezoelectric vibration module 10 of the first embodiment The difference is that the planar piezoelectric vibration module 10A further includes an insulating bottom layer 16 , and the insulating bottom layer 16 is disposed on the other side of the conductive layer 11 relative to the bonding layer 13 . The material of the insulating bottom layer 16 is, for example, glass fiber epoxy laminate (FR4), glass, PET or polyimide (PI), or a combination thereof. In addition, the thickness of the insulating base layer 16 is, for example, between 10 to 100 microns, and the insulating base layer 16 can provide a supporting function for the planar piezoelectric vibration module 10A. In one embodiment, the Young's modulus of the insulating bottom layer 16 is smaller than the Young's modulus of the conductive layer 11. The Young's modulus of the insulating bottom layer 16 is, for example, between 10 and 30 GPa, preferably between 15 and 20 GPa. between.

Fig. 3 is a schematic structural view of the planar piezoelectric vibration module of the third embodiment of the invention, as shown in Fig. 3, the planar piezoelectric vibration module 10B of the third embodiment and the planar piezoelectric vibration module 10A of the second embodiment The difference is that the planar piezoelectric vibration module 10B further includes a first auxiliary layer 17 and a second auxiliary layer 18 . The first auxiliary layer 17 is arranged on the other side of the insulating base layer 16 relative to the conductive layer 11, so that the insulating base layer 16 is interposed between the conductive layer 11 and the first auxiliary layer 17; the second auxiliary layer 18 is arranged on the first auxiliary layer 17 Between the insulating base layer 16 , that is, the first auxiliary layer 17 , the second auxiliary layer 18 , the insulating base layer 16 and the conductive layer 11 are arranged sequentially from bottom to top. Wherein, in one embodiment, the Young's modulus of the insulating bottom layer 16 is smaller than the Young's modulus of the conductive layer 11, and also smaller than the Young's modulus of the second auxiliary layer 18, that is, the second auxiliary layer 18, the insulating bottom layer 16 and the conductive layer The Young's modulus of 11 is arranged in order of high Young's modulus, low Young's modulus, and high Young's modulus. In accordance with the Young's modulus of the bonding layer 13 , the piezoelectric material layer 121 and the protective layer 14 , the Young's modulus of each material stacked in sequence is staggered with one high and one low.

Wherein, the thickness of the first auxiliary layer 17 is, for example, between 10 and 200 microns; the thickness of the second auxiliary layer 18 is, for example, less than 50 microns. In an embodiment not shown, the second auxiliary layer 18 can also be omitted.

Fig. 4 is a schematic structural view of the planar piezoelectric vibration module of the fourth embodiment of the invention, as shown in Fig. 4, the planar piezoelectric vibration module 10C of the fourth embodiment and the planar piezoelectric vibration module 10B of the third embodiment The difference is that in the planar piezoelectric vibration module 10C, the first conductive region 111 of the conductive layer 11 is provided with an opening 20, the position of the opening 20 is, for example, the preset position corresponding to the piezoelectric element 12, and the inner diameter of the opening 20 d is smaller than the outer diameter D of the piezoelectric element 12, when the piezoelectric element 12 is fixed on the first conductive region 111 of the conductive layer 11 via the adhesive layer 13A, the adhesive layer 13A is further filled in the opening 20, as shown in the figure As shown in FIG. 4 , in one embodiment, part of the bonding layer 13A is fixed to the insulating bottom layer 16 under the conductive layer 11 . Wherein the thermal expansion coefficient of the following layer 13A is greater than the thermal expansion coefficient of the insulating bottom layer 16, as previously mentioned, the thermal expansion coefficient of the following layer 13A is for example between 85 to 90 ppm, and the thermal expansion coefficient of the insulating bottom layer 16 is for example between 9 to 13 ppm.

Fig. 5 is a schematic structural view of the planar piezoelectric vibration module of the fifth embodiment of the invention. As shown in Fig. 5, the fifth embodiment of the planar piezoelectric vibration module 10D and the third embodiment of the planar piezoelectric vibration module 10B The difference is that in the planar piezoelectric vibration module 10D, the number of piezoelectric elements 12 is not limited to one. As shown in FIG. The packaging material layer 124 of the two piezoelectric elements 12, 12' adopts the same material as that of the bonding layer 13. In other words, the bonding layer 13 is except for the first conductive layer that fixes the piezoelectric element 12 below to the conductive layer 11. Outside the area 111 , it further covers the periphery of the lower piezoelectric element 12 and a part of the periphery of the upper piezoelectric element 12 ′, and fills the gap 22 between the two piezoelectric elements 12 , 12 ′. The above-mentioned conductive circuit 19 also connects a second electrode layer 123 of the upper piezoelectric element 12 ′ away from the lower piezoelectric element 12 to the second conductive region 112 of the conductive layer 11 . In one embodiment, the second auxiliary layer 18 may also be omitted.

In the fifth embodiment, the configuration of the planar piezoelectric vibration module 10B in the third embodiment is used for illustration, but it is not limited thereto. In other unillustrated embodiments, the two The configuration of the piezoelectric elements 12, 12' can also be applied to the planar piezoelectric vibration module of the first embodiment (that is, the first auxiliary layer, the second auxiliary layer and the insulating bottom layer are omitted), and to the planar piezoelectric vibration module of the second embodiment. The vibration module (that is, omit the first auxiliary layer and the second auxiliary layer), or be applied to the planar piezoelectric vibration module of the fourth embodiment (that is, the first conductive region has openings).

In this creative embodiment, the two materials with smaller thermal expansion coefficients or larger Young's coefficients are arranged at intervals, which can avoid the phenomenon that the thermal expansion coefficients or Young's coefficients of the multilayer structure decrease or increase layer by layer, thereby reducing the plane pressure. The delamination or bending problem caused by deformation between the layers of the electric vibration module improves the reliability of the planar piezoelectric vibration module and the stability of its sound pressure response, and has the advantages of high reliability and good sound pressure response stability.

Although this creation has been disclosed above with the embodiment, it is not intended to limit this creation. Those with ordinary knowledge in the technical field of this creation can make some changes and modifications without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation should be defined by the scope of the attached patent application.

10, 10A, 10B, 10C, 10D: planar piezoelectric vibration module 11: Conductive layer 111: the first conductive area 112: the second conductive area 113: insulation groove 12, 12': piezoelectric element 121: piezoelectric material layer 1211: first side 1212: second side 1213: side 122: the first electrode layer 123: Second electrode layer 124: Packaging material layer 13, 13A: Adhesive layer 14: Protective layer 15: Insulation filling layer 151: through channel 16: Insulation bottom layer 17: The first auxiliary layer 18: Second auxiliary layer 19: Conductive circuit 20: opening d: inner diameter D: outer diameter 22: Gap

FIG. 1 is a schematic structural diagram of a planar piezoelectric vibration module according to a first embodiment of the invention. Fig. 2 is a schematic structural diagram of a planar piezoelectric vibration module according to a second embodiment of the invention. FIG. 3 is a schematic structural view of a planar piezoelectric vibration module according to a third embodiment of the invention. Fig. 4 is a schematic structural diagram of a planar piezoelectric vibration module according to a fourth embodiment of the invention. Fig. 5 is a schematic structural diagram of a planar piezoelectric vibration module according to a fifth embodiment of the invention.

10: Planar piezoelectric vibration module

11: Conductive layer

111: the first conductive area

112: the second conductive area

113: insulation groove

12: Piezoelectric element

121: piezoelectric material layer

1211: first side

1212: second side

1213: side

122: the first electrode layer

123: Second electrode layer

124: Packaging material layer

13:The next layer

14: Protective layer

15: Insulation filling layer

151: through the channel

19: Conductive circuit

Claims (20)

A planar piezoelectric vibration module, comprising A conductive layer, including a first conductive region, a second conductive region and an insulating groove, the insulating groove is opened between the first conductive region and the second conductive region; at least one piezoelectric element comprising a layer of piezoelectric material; and an adhesive layer, the adhesive layer is disposed between the conductive layer and the at least one piezoelectric element, so that the at least one piezoelectric element is fixed at least in the first conductive region; Wherein the thermal expansion coefficient of the bonding layer is greater than the thermal expansion coefficient of the conductive layer and the thermal expansion coefficient of the piezoelectric material layer. The planar piezoelectric vibration module according to claim 1 further includes a protective layer covering the at least one piezoelectric element, and the thermal expansion coefficient of the protective layer is greater than that of the piezoelectric material layer. The planar piezoelectric vibration module as claimed in claim 2 further includes an insulating filling layer disposed between the conductive layer and the protective layer and surrounding the at least one piezoelectric element. The planar piezoelectric vibration module as described in Claim 1 further includes an insulating bottom layer, the insulating bottom layer is arranged on the other side of the conductive layer relative to the bonding layer, and the Young’s modulus of the insulating bottom layer is smaller than that of the conductive layer. coefficient. The planar piezoelectric vibration module as described in claim 4, wherein the first conductive region is provided with an opening, and the adhesive layer is further filled in the opening to connect the insulating bottom layer, wherein the thermal expansion coefficient of the adhesive layer greater than the coefficient of thermal expansion of the insulating bottom layer. The planar piezoelectric vibration module as described in claim 4 further includes a first auxiliary layer, the first auxiliary layer is arranged on the other side of the insulating bottom layer relative to the conductive layer, so that the insulating bottom layer is between the conductive layer Between the layer and the first auxiliary layer, the material of the first auxiliary layer is an insulating material. The planar piezoelectric vibration module as described in Claim 6 further includes a second auxiliary layer, the second auxiliary layer is disposed between the first auxiliary layer and the insulating bottom layer, and the Young's modulus of the first auxiliary layer smaller than the Young's modulus of the second auxiliary layer. The planar piezoelectric vibration module according to claim 7, wherein the material of the second auxiliary layer is the same as that of the conductive layer. The planar piezoelectric vibration module as described in claim 1 further includes a conductive circuit, the at least one piezoelectric element further includes a first electrode layer and a second electrode layer, and the piezoelectric material layer has a first side , a second side and a side, the side connects the first side and the second side, the first side faces the bonding layer, the first electrode layer and the second electrode layer are respectively arranged on the first side and the second side On the second side, the conductive circuit is electrically connected to the second conductive region and the second electrode layer. The planar piezoelectric vibration module according to Claim 9 further includes a packaging material layer, and the packaging material layer covers at least part of the first side and part of the side surface. A planar piezoelectric vibration module, comprising A conductive layer, including a first conductive region, a second conductive region and an insulating groove, the insulating groove is opened between the first conductive region and the second conductive region; at least one piezoelectric element comprising a layer of piezoelectric material; and an adhesive layer, the adhesive layer is disposed between the conductive layer and the at least one piezoelectric element, so that the at least one piezoelectric element is fixed at least in the first conductive region; Wherein the Young's modulus of the bonding layer is smaller than the Young's modulus of the conductive layer and the Young's modulus of the piezoelectric material layer. The planar piezoelectric vibration module as claimed in claim 11 further includes a protective layer covering the at least one piezoelectric element, and the Young's modulus of the protective layer is smaller than the Young's modulus of the piezoelectric material layer. The planar piezoelectric vibration module as claimed in claim 12 further includes an insulating filling layer disposed between the conductive layer and the protective layer and surrounding the at least one piezoelectric element. The planar piezoelectric vibration module as described in Claim 11 further includes an insulating bottom layer, the insulating bottom layer is disposed on the other side of the conductive layer relative to the bonding layer, and the Young’s modulus of the insulating bottom layer is smaller than that of the conductive layer. coefficient. The planar piezoelectric vibration module as described in claim 14, wherein the first conductive region is provided with an opening, and the adhesive layer is further filled in the opening to connect the insulating bottom layer, wherein the Young's of the adhesive layer is The coefficient is less than the Young's modulus of the insulating bottom layer. The planar piezoelectric vibration module as described in claim 14 further includes a first auxiliary layer, the first auxiliary layer is arranged on the other side of the insulating bottom layer relative to the conductive layer, so that the insulating bottom layer is between the conductive layer Between the layer and the first auxiliary layer, the material of the first auxiliary layer is an insulating material. The planar piezoelectric vibration module as described in Claim 16 further includes a second auxiliary layer, the second auxiliary layer is disposed between the first auxiliary layer and the insulating bottom layer, and the Young's modulus of the first auxiliary layer smaller than the Young's modulus of the second auxiliary layer. The planar piezoelectric vibration module as claimed in claim 17, wherein the material of the second auxiliary layer is the same as that of the conductive layer. The planar piezoelectric vibration module according to claim 11 further includes a conductive circuit, the piezoelectric material layer has a first side, a second side and a side surface, and the side surface connects the first side and the second side. side, the first side faces the bonding layer, and the conductive line is electrically connected to the second conductive region and the second side. The planar piezoelectric vibration module according to claim 19 further includes a packaging material layer, and the packaging material layer covers at least part of the first side and part of the side surface.

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