TWM637912U - Piezoelectric vibration module and planar piezoelectric element - Google Patents

Piezoelectric vibration module and planar piezoelectric element Download PDF

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TWM637912U
TWM637912U TW111209295U TW111209295U TWM637912U TW M637912 U TWM637912 U TW M637912U TW 111209295 U TW111209295 U TW 111209295U TW 111209295 U TW111209295 U TW 111209295U TW M637912 U TWM637912 U TW M637912U
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Taiwan
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conductive
layer
conductive layer
piezoelectric
vibration module
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TW111209295U
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Chinese (zh)
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鄭岳世
徐湘倫
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樂聲電子系統股份有限公司
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Abstract

A piezoelectric vibration module includes two conductive layers, two plane piezoelectric elements and a packaging material. The two conductive layers face each other and are spaced apart. The two plane piezoelectric elements face each other and are arranged between the two conductive layers, wherein a separation gap exists between the two planar piezoelectric elements. The packaging material is arranged between the two conductive layers, covers the two plane piezoelectric elements, and fills the separation gap. A planar piezoelectric element comprises a piezoelectric material layer, two conductive adhesive layers and a surface treatment layer, wherein the two conductive adhesive layers are respectively arranged on two surfaces of the piezoelectric material layer, and the surface treatment layer covers the peripheral side of the piezoelectric material layer, the peripheral wall and the exposed surface of the conductive adhesive layer. The piezoelectric vibration module has the advantage of realizing high frequency and wide frequency transmission of sound waves.

Description

壓電振動模組與平面壓電元件Piezoelectric vibration module and planar piezoelectric element

本創作是有關於一種振動模組的結構,尤其是有關於一種壓電振動模組的結構以及平面壓電元件的結構。 This creation is about the structure of a vibration module, especially about the structure of a piezoelectric vibration module and the structure of a planar piezoelectric element.

隨著電子產品輕薄化發展趨勢,喇叭也逐漸走向薄型化,平面喇叭的需求隨著電子產品市場而快速增加。而如何確保音樂的音質,又能兼具足夠薄度以利內建到電子產品中,遂成為新喇叭產品的技術發展重點,又除薄型化之訴求外,寬頻化也是後續壓電喇叭技術發展的重要課題,其中在寬頻化需求條件下,喇叭的音頻響應有較寬的範圍,各頻率的音壓也須維持在足夠相近之狀態,以避免高低音起伏過大。因此提供具有寬音域頻寬之壓電平面喇叭(即壓電振動模組),實為為前業者所極力追求的。 With the development trend of thinner and lighter electronic products, speakers are gradually becoming thinner, and the demand for planar speakers is rapidly increasing along with the electronic product market. How to ensure the sound quality of music, and how to be thin enough to be built into electronic products has become the focus of technological development of new speaker products. In addition to the appeal of thinness, broadband is also the follow-up development of piezoelectric speaker technology. Among them, under the condition of broadband demand, the audio response of the speaker has a wide range, and the sound pressure of each frequency must be maintained at a sufficiently similar state to avoid excessive fluctuations in high and low frequencies. Therefore, providing a piezoelectric planar speaker (that is, a piezoelectric vibration module) with a wide frequency range and bandwidth is really pursued by the former industry.

本創作提供一種壓電振動模組及平面壓電元件,其中壓電振動模組具有實現高頻、寬頻地發送聲波的優點。 The invention provides a piezoelectric vibration module and a planar piezoelectric element, wherein the piezoelectric vibration module has the advantage of realizing high-frequency and wide-band transmission of sound waves.

本創作所提供的壓電振動模組,包含兩導電層、兩平面壓電元件以及封裝材。兩導電層彼此面對且間隔設置;兩平面壓電元件彼此面對且設置於兩導電層之間,其中兩平面壓電元件之間存在壓電材料分離間隙;封裝材設置於兩導電層之間,包覆兩平面壓電元件,且填滿壓電材料分離間隙。 The piezoelectric vibration module provided by this creation includes two conductive layers, two planar piezoelectric elements and packaging materials. The two conductive layers face each other and are arranged at intervals; the two planar piezoelectric elements face each other and are arranged between the two conductive layers, wherein there is a piezoelectric material separation gap between the two planar piezoelectric elements; the packaging material is arranged between the two conductive layers The space covers the two planar piezoelectric elements and fills the separation gap of the piezoelectric material.

在本創作的一實施例中,上述之壓電材料分離間隙的間距小於20微米。 In an embodiment of the present invention, the pitch of the separation gap of the piezoelectric material is less than 20 microns.

在本創作的一實施例中,上述之兩平面壓電元件分別與兩導電層直接接觸。 In an embodiment of the present invention, the above-mentioned two planar piezoelectric elements are respectively in direct contact with the two conductive layers.

在本創作的一實施例中,上述之兩平面壓電元件至少其中之一與鄰近的兩導電層至少其中之一之間存在接著間隙,封裝材更填入接著間隙。 In an embodiment of the present invention, there is a bonding gap between at least one of the two planar piezoelectric elements and at least one of the two adjacent conductive layers, and the encapsulation material further fills the bonding gap.

在本創作的一實施例中,壓電振動模組更包含非導電接著層,兩平面壓電元件至少其中之一與鄰近的兩導電層至少其中之一之間存在接著間隙,非導電接著層設置於接著間隙,非導電接著層為矽膠、壓克力膠或環氧樹脂。 In an embodiment of the present invention, the piezoelectric vibration module further includes a non-conductive adhesive layer, and there is an adhesive gap between at least one of the two planar piezoelectric elements and at least one of the adjacent two conductive layers, and the non-conductive adhesive layer Set in the bonding gap, the non-conductive bonding layer is silicone rubber, acrylic glue or epoxy resin.

在本創作的一實施例中,壓電振動模組更包含導電接著層,兩平面壓電元件至少其中之一與鄰近的兩導電層至少其中之一之間存在接著間隙,導電接著層設置於接著間隙。 In an embodiment of the present invention, the piezoelectric vibration module further includes a conductive adhesive layer, and there is an adhesive gap between at least one of the two planar piezoelectric elements and at least one of the adjacent two conductive layers, and the conductive adhesive layer is disposed on Then gap.

在本創作的一實施例中,上述之接著間隙的間距小於20微米。 In an embodiment of the present invention, the pitch of the aforesaid bonding gaps is less than 20 microns.

在本創作的一實施例中,上述之兩導電層選自導電金屬、導電金屬氧化材料、導電膠及導電高分子材料其中之一或其組合。 In an embodiment of the present invention, the above two conductive layers are selected from one or a combination of conductive metal, conductive metal oxide material, conductive glue and conductive polymer material.

在本創作的一實施例中,上述之兩導電層分別供電性連接至音源輸出裝置的正極接點及負極接點。 In an embodiment of the present invention, the above two conductive layers are electrically connected to the positive contact and the negative contact of the audio output device respectively.

本創作所提供的壓電振動模組,包含支撐層、第一導電層、第二導電層、第三導電層、第一平面壓電元件、第二平面壓電元件、第一封裝材、第二封裝材、以及導電連接結構。第一導電層設置於支撐層上;第二導電層與第一導電層彼此面對且間隔設置;第一平面壓電元件設置於第一導電層及第二導電層之間;第一封裝材至少設置於第一導電層及第二導電層之間,且至少包覆第一平面壓電元件的周側面;第三導電層設置於支撐層上,且與第一導電層之間存在開槽;第二平面壓電元件設置第三導電層上;第二封裝材至少設置於第三導電層上且至少包覆第二平面壓電元件的周側面,第二封裝材更設置於開槽的一部分且包覆部分第三導電層;導電連接結構設置於支撐層上且填設於開槽的另一部分,導電連接結構並電性連接第一導電層及第二平面壓電元件。 The piezoelectric vibration module provided by this creation includes a support layer, a first conductive layer, a second conductive layer, a third conductive layer, a first planar piezoelectric element, a second planar piezoelectric element, a first packaging material, a second Two packaging materials, and a conductive connection structure. The first conductive layer is arranged on the support layer; the second conductive layer and the first conductive layer are facing each other and arranged at intervals; the first planar piezoelectric element is arranged between the first conductive layer and the second conductive layer; the first packaging material It is at least disposed between the first conductive layer and the second conductive layer, and covers at least the peripheral side of the first planar piezoelectric element; the third conductive layer is disposed on the support layer, and there is a groove between the first conductive layer and the first conductive layer ; The second planar piezoelectric element is arranged on the third conductive layer; the second packaging material is at least arranged on the third conductive layer and at least covers the peripheral side of the second planar piezoelectric element, and the second packaging material is further arranged on the grooved A part covers part of the third conductive layer; the conductive connection structure is arranged on the support layer and filled in the other part of the slot, and the conductive connection structure is electrically connected to the first conductive layer and the second planar piezoelectric element.

在本創作的一實施例中,上述之導電連接結構包含縱向部、第一橫向部及第二橫向部,縱向部由開槽沿著第二封裝材的一側設置,第一橫向部由縱向部的鄰近底端處橫向延伸以電性連接第一導電層,第二橫向部由縱向部的頂端橫向延伸且電性連接第二平面壓電元件。 In an embodiment of the present creation, the above-mentioned conductive connection structure includes a longitudinal portion, a first transverse portion and a second transverse portion, the longitudinal portion is provided along one side of the second packaging material by a slot, and the first transverse portion is formed by a longitudinal The portion adjacent to the bottom end extends laterally to electrically connect to the first conductive layer, and the second lateral portion extends laterally from the top end of the longitudinal portion and electrically connects to the second planar piezoelectric element.

在本創作的一實施例中,壓電振動模組更包含第四導電層,設置於第二平面壓電元件之遠離第三導電層的另一側,使第四導電層與第三導電層彼此面對且間隔設置,又第二封裝材設置於第三導電層及第四導電層之間。 In an embodiment of the present invention, the piezoelectric vibration module further includes a fourth conductive layer, which is disposed on the other side of the second planar piezoelectric element away from the third conductive layer, so that the fourth conductive layer and the third conductive layer They face each other and are arranged at intervals, and the second encapsulation material is arranged between the third conductive layer and the fourth conductive layer.

在本創作的一實施例中,上述之導電連接結構包含縱向部、第一橫向部及第二橫向部,縱向部由開槽沿著第二封裝材及第四導電層的一側設置,第一橫向部由縱向部的鄰近底端處橫向延伸以電性連接第一導電層,第二橫向部由縱向部的頂端橫向延伸且電性連接第四導電層。 In an embodiment of the present creation, the above-mentioned conductive connection structure includes a longitudinal portion, a first transverse portion and a second transverse portion, the longitudinal portion is arranged along one side of the second packaging material and the fourth conductive layer through slots, and the second A transverse portion extends transversely from a bottom end of the longitudinal portion to be electrically connected to the first conductive layer, and a second transverse portion extends transversely from a top end of the longitudinal portion and is electrically connected to the fourth conductive layer.

在本創作的一實施例中,上述之第一平面壓電元件具有相對的第一底側及第一頂側,第一底側及第一頂側分別與第一導電層及第二導電層直接接觸,第二平面壓電元件具有第二底側,第二底側與第三導電層直接接觸。 In an embodiment of the present invention, the above-mentioned first planar piezoelectric element has a first bottom side and a first top side opposite to each other, and the first bottom side and the first top side are respectively connected to the first conductive layer and the second conductive layer In direct contact, the second planar piezoelectric element has a second bottom side in direct contact with the third conductive layer.

在本創作的一實施例中,上述之第一平面壓電元件具有相對的第一底側及第一頂側,第一底側及第一頂側至少其中之一分別與第一導電層及第二導電層至少其中之一之間存在第一接著間隙,第二平面壓電元件具有第二底側,第二底側與第三導電層之間存在第二接著間隙,其中,第一封裝材更填入第一接著間隙,第二封裝材更填入第二接著間隙。 In an embodiment of the present invention, the above-mentioned first planar piezoelectric element has a first bottom side and a first top side opposite to each other, at least one of the first bottom side and the first top side is respectively connected to the first conductive layer and the first top side. There is a first bonding gap between at least one of the second conductive layers, the second planar piezoelectric element has a second bottom side, and there is a second bonding gap between the second bottom side and the third conductive layer, wherein the first package The material further fills the first bonding gap, and the second packaging material further fills the second bonding gap.

在本創作的一實施例中,壓電振動模組更包含第一導電接著層及第二導電接著層,第一平面壓電元件具有相對的第一底側及第一頂側,第一底側及第一頂側至少其中之一分別與第一導電層及第二導電層至少其中之一之間存在第一接著間隙,第二平面壓電元件具有第二底側,第二底側與第三導電層之間存在第二接著間隙,其中第一導電接著層設置於第一接著間隙,第二導電接著層設置於第二接著間隙。 In an embodiment of the present invention, the piezoelectric vibration module further includes a first conductive bonding layer and a second conductive bonding layer, the first planar piezoelectric element has a first bottom side and a first top side opposite to each other, and the first bottom There is a first connection gap between at least one of the side and the first top side and at least one of the first conductive layer and the second conductive layer respectively, the second planar piezoelectric element has a second bottom side, and the second bottom side is connected to the second bottom side There is a second bonding gap between the third conductive layers, wherein the first conductive bonding layer is disposed in the first bonding gap, and the second conductive bonding layer is disposed in the second bonding gap.

本創作所提供的壓電振動模組包含第一導電層、兩平面壓電元件、兩封裝材、結合層、以及第二導電層。兩平面壓電元件並列設置於第一導電層上;兩封裝材分別至少包覆兩平面壓電元件的周側面;結合層設置於第一導電層上,且將兩封裝材固接在一起;第二導電層設置於結合層上,且電性連接兩平面壓電元件。 The piezoelectric vibration module provided by this creation includes a first conductive layer, two planar piezoelectric elements, two packaging materials, a bonding layer, and a second conductive layer. The two planar piezoelectric elements are arranged side by side on the first conductive layer; the two packaging materials cover at least the peripheral sides of the two planar piezoelectric elements respectively; the bonding layer is arranged on the first conductive layer, and the two packaging materials are fixed together; The second conductive layer is disposed on the bonding layer and is electrically connected to the two planar piezoelectric elements.

在本創作的一實施例中,上述之第一導電層包含銅箔,第一導電層的厚度介於5微米至35微米之間。 In an embodiment of the present invention, the above-mentioned first conductive layer includes copper foil, and the thickness of the first conductive layer is between 5 microns and 35 microns.

在本創作的一實施例中,上述之平面壓電元件的厚度介於50微米至300微米之間,結合層的厚度介於25微米至200微米之間。 In an embodiment of the present invention, the thickness of the above-mentioned planar piezoelectric element is between 50 microns and 300 microns, and the thickness of the bonding layer is between 25 microns and 200 microns.

在本創作的一實施例中,上述之第二導電層的厚度介於10微米至50微米之間。 In an embodiment of the present invention, the thickness of the above-mentioned second conductive layer is between 10 microns and 50 microns.

本創作所提供的平面壓電元件包含壓電材料層、兩導電膠層、以及表面處理層。壓電材料層包含相對兩表面與周側面,周側面位於兩表面之間且連接兩表面;兩導電膠層分別設置於壓電材料層的兩表面,每一導電膠層包含顯露表面及周壁;表面處理層至少覆蓋壓電材料層的周側面、導電膠層的周壁、以及其中一導電膠層的顯露表面。 The planar piezoelectric element provided by this creation includes a piezoelectric material layer, two conductive adhesive layers, and a surface treatment layer. The piezoelectric material layer includes two opposite surfaces and a peripheral side, the peripheral side is located between the two surfaces and connects the two surfaces; two conductive adhesive layers are respectively arranged on the two surfaces of the piezoelectric material layer, and each conductive adhesive layer includes an exposed surface and a peripheral wall; The surface treatment layer at least covers the peripheral side of the piezoelectric material layer, the peripheral wall of the conductive adhesive layer, and the exposed surface of one of the conductive adhesive layers.

在本創作的一實施例中,上述之表面處理層更覆蓋另一導電膠層的顯露表面。 In an embodiment of the present invention, the above-mentioned surface treatment layer further covers the exposed surface of another conductive adhesive layer.

在本創作的一實施例中,上述之導電膠層的顯露表面的面積與壓電材料層的表面的面積相等。 In an embodiment of the present invention, the area of the exposed surface of the above-mentioned conductive adhesive layer is equal to the area of the surface of the piezoelectric material layer.

在本創作的一實施例中,上述之導電膠層的顯露表面的面積小於壓電材料層的表面的面積,導電膠層未完全覆蓋壓電材料層的表面,表面處理層更覆蓋未被導電膠層覆蓋的部分表面。 In an embodiment of the present invention, the exposed surface area of the above-mentioned conductive adhesive layer is smaller than the surface area of the piezoelectric material layer, the conductive adhesive layer does not completely cover the surface of the piezoelectric material layer, and the surface treatment layer covers the surface that is not conductive. Part of the surface covered by the glue layer.

本創作因採用平面壓電元件之間的上下配置或左右並列設置而使壓電振動模組具有不同的厚度。由於平面壓電元件之壓電材料層的厚度不同,各壓電材料層的諧振頻率不同,使得疊堆或並列的平面壓電元件之間存在多種模態,即存在多個諧振頻率。本創作壓電振動模組通過合理設計各壓電材料層的厚度,使平面壓電元件中各壓電材料層的諧振頻率相互靠近並耦合,在較寬的頻率範圍內同時工作,可以使其組合頻率回應不產生間斷和過深的 凹谷,在這一頻帶內將形成複合多模振動,即能有效地拓展壓電振動模組的工作頻寬,實現高頻、寬頻地發送聲波。此外本創作平面壓電元件的表面塗佈有表面處理層,以有效保護平面壓電元件的壓電材料層,避免影響諧振頻率。 In this creation, the piezoelectric vibration modules have different thicknesses due to the up-and-down arrangement or left-right arrangement between the planar piezoelectric elements. Due to the different thicknesses of the piezoelectric material layers of the planar piezoelectric elements, the resonant frequency of each piezoelectric material layer is different, so that there are multiple modes between the stacked or parallel planar piezoelectric elements, that is, there are multiple resonant frequencies. By rationally designing the thickness of each piezoelectric material layer, the piezoelectric vibration module of this creation makes the resonant frequency of each piezoelectric material layer in the planar piezoelectric element close to and couples with each other, and works simultaneously in a wide frequency range, which can make it Combined frequency response does not produce discontinuous and deep The concave valley will form composite multi-mode vibration in this frequency band, which can effectively expand the working bandwidth of the piezoelectric vibration module and realize high-frequency and wide-band transmission of sound waves. In addition, the surface of the planar piezoelectric element of the invention is coated with a surface treatment layer to effectively protect the piezoelectric material layer of the planar piezoelectric element and avoid affecting the resonance frequency.

為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other purposes, features and advantages of the invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

10、10A、10B、10C、10D、10E、10F、10G、10H、10I:壓電振動模組 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I: piezoelectric vibration module

12、12':導電層 12, 12': conductive layer

12a、12a':第一導電層 12a, 12a': the first conductive layer

12b:第二導電層 12b: Second conductive layer

12c:第三導電層 12c: The third conductive layer

121:表面 121: surface

14、14':平面壓電元件 14, 14': planar piezoelectric element

14a:第一平面壓電元件 14a: the first planar piezoelectric element

141a:第一底側 141a: first bottom side

142a:第一頂側 142a: first top side

143a:周側面 143a: Zhou side

14b:第二平面壓電元件 14b: The second planar piezoelectric element

141b:第二底側 141b: second bottom side

142b:第二頂側 142b: second top side

143b:周側面 143b: Zhou side

16、16':封裝材 16, 16': packaging material

16a:第一封裝材 16a: the first packaging material

16b:第二封裝材 16b: Second packaging material

18:壓電材料分離間隙 18: Piezoelectric material separation gap

20:接著間隙 20: Follow the gap

20a:第一接著間隙 20a: First follow-up gap

20b:第二接著間隙 20b: Second follow-up gap

22:導電接著層 22: Conductive bonding layer

22a:第一導電接著層 22a: the first conductive bonding layer

22b:第二導電接著層 22b: second conductive bonding layer

24:音源輸出裝置 24: Audio output device

26:導電線路 26: Conductive circuit

28:支撐層 28: support layer

30:導電連接結構 30: Conductive connection structure

301:縱向部 301: Vertical part

302:第一橫向部 302: first transverse part

303:第二橫向部 303: second lateral part

32:開槽 32: slotting

34:結合層 34: Bonding layer

36:通孔 36: Through hole

38、38':外部連接部 38, 38': external connection part

40:基板結構 40: Substrate structure

42:絕緣層 42: Insulation layer

44:壓電材料層 44: Piezoelectric material layer

441、441':表面 441, 441': surface

442:周側面 442: side view

46、46':導電膠層 46, 46': Conductive adhesive layer

461、461':顯露表面 461, 461': exposed surface

462、462':周壁 462, 462': surrounding wall

50:平面壓電元件 50: Planar piezoelectric element

52:表面處理層 52: Surface treatment layer

圖1是本創作一第一實施例壓電振動模組的結構示意圖。 FIG. 1 is a schematic structural diagram of a piezoelectric vibration module according to a first embodiment of the invention.

圖2是本創作一第二實施例壓電振動模組的結構示意圖。 Fig. 2 is a schematic structural diagram of a piezoelectric vibration module according to a second embodiment of the invention.

圖3是本創作一第三實施例壓電振動模組的結構示意圖。 Fig. 3 is a schematic structural diagram of a piezoelectric vibration module according to a third embodiment of the invention.

圖4是本創作一第四實施例壓電振動模組的結構示意圖。 Fig. 4 is a schematic structural diagram of a piezoelectric vibration module according to a fourth embodiment of the invention.

圖5是本創作一第五實施例壓電振動模組的結構示意圖。 Fig. 5 is a schematic structural diagram of a piezoelectric vibration module according to a fifth embodiment of the invention.

圖6是本創作一第六實施例壓電振動模組的結構示意圖。 FIG. 6 is a schematic structural diagram of a piezoelectric vibration module according to a sixth embodiment of the present invention.

圖7是本創作一第七實施例壓電振動模組的結構示意圖。 FIG. 7 is a schematic structural diagram of a piezoelectric vibration module according to a seventh embodiment of the present invention.

圖8是本創作一第八實施例壓電振動模組的結構示意圖。 FIG. 8 is a schematic structural diagram of a piezoelectric vibration module according to an eighth embodiment of the present invention.

圖9是本創作一第九實施例壓電振動模組的結構示意圖。 FIG. 9 is a structural schematic diagram of a piezoelectric vibration module according to a ninth embodiment of the present invention.

圖10A是本創作一第十實施例壓電振動模組的結構示意圖。 FIG. 10A is a schematic structural diagram of a piezoelectric vibration module according to the tenth embodiment of the present invention.

圖10B是本創作一第十實施例壓電振動模組的俯視示意圖。 Fig. 10B is a schematic top view of the piezoelectric vibration module according to the tenth embodiment of the present invention.

圖11是本創作一第十實施例壓電振動模組的其中一製程階段示意圖。 FIG. 11 is a schematic diagram of one process stage of the piezoelectric vibration module according to the tenth embodiment of the present invention.

圖12A至圖12D所示是本創作不同態樣之平面壓電元件示意圖。 12A to 12D are schematic diagrams of planar piezoelectric elements in different aspects of the present invention.

圖1是本創作一第一實施例壓電振動模組的結構示意圖,如圖1所示,壓電振動模組10包含兩導電層12、12'、兩平面壓電元件14、14'以及封裝材16。兩導電層12、12'彼此間隔且相對;兩平面壓電元件14、14'彼此面對且設置於兩導電層12、12'之間,其中兩平面壓電元件14、14'之間存在壓電材料分離間隙18,於一實施例中,兩平面壓電元件14、14'為上下間隔設置,壓電材料分離間隙18的間距例如為小於20微米(um),其中間距以小於15微米為較佳,以小於10微米為最佳;封裝材16設置於兩導電層12、12'之間,包覆兩平面壓電元件14、14',且填滿壓電材料分離間隙18。 Fig. 1 is a structural schematic diagram of the piezoelectric vibration module of the first embodiment of the invention. As shown in Fig. 1, the piezoelectric vibration module 10 includes two conductive layers 12, 12', two planar piezoelectric elements 14, 14' and Packaging material 16. The two conductive layers 12, 12' are spaced apart from each other and facing each other; the two planar piezoelectric elements 14, 14' face each other and are arranged between the two conductive layers 12, 12', wherein there is a Piezoelectric material separation gap 18, in one embodiment, two planar piezoelectric elements 14, 14' are spaced up and down, and the pitch of piezoelectric material separation gap 18 is, for example, less than 20 microns (um), wherein the pitch is less than 15 microns Preferably, the thickness is less than 10 microns; the packaging material 16 is disposed between the two conductive layers 12, 12', covers the two planar piezoelectric elements 14, 14', and fills the separation gap 18 of the piezoelectric material.

接續上述說明,如圖1所示,於一實施例中,其中一平面壓電元件14(例如位於上方的平面壓電元件14)直接接觸與其鄰近的導電層12,而另一平面壓電元件14'(例如位於下方的平面壓電元件14')與其鄰近的導電層12'之間可存在一接著間隙20,封裝材16可填入於接著間隙20,接著間隙20的間距例如為小於20微米,其中間距以小於15微米為較佳,以小於10微米為最佳。又於一未繪示的實施例中,位於上方及下方的平面壓電元件14、14'與其鄰近的導電層12、12'之間皆可存在有接著間隙20,且接著間隙20皆填設有一部份的封裝材16。 Continuing the above description, as shown in FIG. 1, in one embodiment, one of the planar piezoelectric elements 14 (for example, the planar piezoelectric element 14 located above) directly contacts the conductive layer 12 adjacent to it, while the other planar piezoelectric element 14' (such as the planar piezoelectric element 14' located below) and its adjacent conductive layer 12' may have a bonding gap 20, and the packaging material 16 may be filled in the bonding gap 20, and the spacing of the bonding gap 20 is, for example, less than 20 microns, wherein the pitch is preferably less than 15 microns, and the most optimal is less than 10 microns. Also in an unillustrated embodiment, there may be gaps 20 between the upper and lower planar piezoelectric elements 14, 14' and the adjacent conductive layers 12, 12', and the gaps 20 are all filled. There is a part of the packaging material 16 .

其中,導電層12、12'的材質可選自導電金屬、導電金屬氧化材料、導電膠及導電高分子材料其中之一或其組合;封裝材16例如是模製(molding)製程所形成的封裝膠體(molding compound),封裝材16的材料例如為環氧樹脂化合物(epoxy)或其他合適的介電材料。又於一實施例中,亦可以其他非 導電接著層取代填入接著間隙20的封裝材16,非導電接著層例如為矽膠(Silicone)、壓克力膠(Acrylic)或環氧樹脂。 Wherein, the material of the conductive layer 12, 12' can be selected from one or a combination of conductive metal, conductive metal oxide material, conductive glue, and conductive polymer material; the package material 16 is, for example, a package formed by a molding process. The molding compound, the material of the packaging material 16 is, for example, epoxy or other suitable dielectric materials. In another embodiment, other non- The conductive adhesive layer replaces the packaging material 16 filling the adhesive gap 20 , and the non-conductive adhesive layer is, for example, silicone, acrylic or epoxy resin.

圖2是本創作一第二實施例壓電振動模組的結構示意圖,如圖2所示,壓電振動模組10A包含兩導電層12、12'、兩平面壓電元件14、14'、導電接著層22、及封裝材16。第二實施例壓電振動模組10A與第一實施例壓電振動模組10的差異主要在於壓電振動模組10A包含一導電接著層22設置於接著間隙20,其他配置則大致相同,於此不再贅述。其中導電接著層22的材料可包含錫膏(solder paste)、導電銀膠(silver paste)或導電膠帶(tape)等。 Fig. 2 is a structural schematic diagram of the piezoelectric vibration module of the second embodiment of the present invention. As shown in Fig. 2, the piezoelectric vibration module 10A includes two conductive layers 12, 12', two planar piezoelectric elements 14, 14', The conductive bonding layer 22 and the packaging material 16 . The difference between the piezoelectric vibration module 10A of the second embodiment and the piezoelectric vibration module 10 of the first embodiment is mainly that the piezoelectric vibration module 10A includes a conductive bonding layer 22 disposed in the bonding gap 20, and other configurations are substantially the same. This will not be repeated here. The material of the conductive bonding layer 22 may include solder paste, conductive silver paste, or conductive tape.

接續上述說明,如圖2所示,於一實施例中,其中一平面壓電元件14(例如位於上方的平面壓電元件14)直接接觸與其鄰近的導電層12,而另一平面壓電元件14'(例如位於下方的平面壓電元件14')與其鄰近的導電層12'之間存在導電接著層22。又於一未繪示的實施例中,位於上方及下方的平面壓電元件14、14'與其鄰近的導電層12、12'之間皆可存在有導電接著層22。 Continuing the above description, as shown in FIG. 2, in one embodiment, one of the planar piezoelectric elements 14 (for example, the planar piezoelectric element 14 located above) directly contacts the conductive layer 12 adjacent to it, while the other planar piezoelectric element A conductive bonding layer 22 exists between 14' (eg, the underlying planar piezoelectric element 14') and its adjacent conductive layer 12'. In another embodiment not shown, there may be a conductive bonding layer 22 between the upper and lower planar piezoelectric elements 14 , 14 ′ and the adjacent conductive layers 12 , 12 ′.

圖3是本創作一第三實施例壓電振動模組的結構示意圖,如圖3所示,壓電振動模組10B包含兩導電層12、12'、兩平面壓電元件14、14'以及封裝材16。第三實施例壓電振動模組10B與第一實施例壓電振動模組10的差異主要在於壓電振動模組10B的兩平面壓電元件14、14'分別與兩導電層12、12'直接接觸,而無存在有任何接著間隙20(標示於圖1及圖2),亦即平面壓電元件14、14'與導電層12、12'之間透過靜電吸附結合在一起。其他配置則大致相同,於此不再贅述。 Fig. 3 is a schematic diagram of the structure of the piezoelectric vibration module according to the third embodiment of the invention. As shown in Fig. 3, the piezoelectric vibration module 10B includes two conductive layers 12, 12', two planar piezoelectric elements 14, 14' and Packaging material 16. The difference between the piezoelectric vibration module 10B of the third embodiment and the piezoelectric vibration module 10 of the first embodiment is mainly that the two planar piezoelectric elements 14, 14' of the piezoelectric vibration module 10B are connected to the two conductive layers 12, 12' respectively. Direct contact without any bonding gap 20 (indicated in FIG. 1 and FIG. 2 ), that is, the planar piezoelectric elements 14, 14' and the conductive layers 12, 12' are bonded together through electrostatic adsorption. Other configurations are roughly the same and will not be repeated here.

在上述第一、第二及第三實施例中,如圖1、圖2及圖3所示,兩平面壓電元件14、14'為上下間隔設置,而與兩平面壓電元件14、14'直接或間 接接觸的兩導電層12、12'分別供電性連接至一音源輸出裝置24的正極接點及負極接點,使得音源輸出裝置24輸出的音源訊號(電壓訊號)能夠傳導到兩導電層12、12',而使得兩導電層12、12'帶有電場,平面壓電元件14、14'因逆壓電作用而產生振動,藉以將音源訊號轉化為平面壓電元件14、14'的振動。於一實施例中,兩導電層12、12'可透過導電線路26電性連接至音源輸出裝置24。 In the above-mentioned first, second and third embodiments, as shown in Fig. 1, Fig. 2 and Fig. 3, the two planar piezoelectric elements 14, 14' are arranged at intervals up and down, and are separated from the two planar piezoelectric elements 14, 14 ' directly or indirectly The two conductive layers 12, 12' that are in contact with each other are connected to the positive contact and the negative contact of a sound source output device 24 respectively, so that the sound source signal (voltage signal) output by the sound source output device 24 can be transmitted to the two conductive layers 12, 12', so that the two conductive layers 12, 12' have an electric field, and the planar piezoelectric elements 14, 14' vibrate due to the reverse piezoelectric effect, so as to convert the audio signal into the vibration of the planar piezoelectric elements 14, 14'. In one embodiment, the two conductive layers 12 , 12 ′ can be electrically connected to the audio output device 24 through the conductive circuit 26 .

圖4是本創作一第四實施例壓電振動模組的結構示意圖,如圖4所示,壓電振動模組10C包含一支撐層28、三導電層、兩平面壓電元件、兩封裝材及一導電連接結構。於一實施例中,三導電層分別為第一導電層12a、第二導電層12b及第三導電層12c,兩平面壓電元件分別為第一平面壓電元件14a及第二平面壓電元件14b,兩封裝材分別為第一封裝材16a及第二封裝材16b。於一實施例,支撐層28的材質例如為玻璃纖維環氧層壓板(FR4)、玻璃、PET或聚醯亞胺(PI)等材料或其組合。 Fig. 4 is a schematic diagram of the structure of the piezoelectric vibration module according to the fourth embodiment of the invention. As shown in Fig. 4, the piezoelectric vibration module 10C includes a support layer 28, three conductive layers, two planar piezoelectric elements, and two packaging materials. and a conductive connection structure. In one embodiment, the three conductive layers are respectively the first conductive layer 12a, the second conductive layer 12b and the third conductive layer 12c, and the two planar piezoelectric elements are respectively the first planar piezoelectric element 14a and the second planar piezoelectric element 14b, the two packaging materials are respectively the first packaging material 16a and the second packaging material 16b. In one embodiment, the material of the support layer 28 is, for example, fiberglass epoxy laminate (FR4), glass, PET, polyimide (PI), or a combination thereof.

如圖4所示,第一導電層12a設置於設置於支撐層28上;第二導電層12b與第一導電層12a彼此面對且上下間隔設置;第一平面壓電元件14a設置於第一導電層12a及第二導電層12b之間,於一實施例中,第一平面壓電元件14a具有相對的第一底側141a及第一頂側142a,第一底側141a及第一頂側142a分別與第一導電層12a及第二導電層12b直接接觸;第一封裝材16a設置於第一導電層12a及第二導電層12b之間,且包覆第一平面壓電元件14a的周側面143a。於一實施例中,如圖4所示,第一封裝材16a未完全覆蓋第一導電層12a及第二導電層12b,而顯露第一導電層12a及第二導電層12b之相對表面121的周緣部分。 As shown in Figure 4, the first conductive layer 12a is arranged on the support layer 28; the second conductive layer 12b and the first conductive layer 12a face each other and are spaced up and down; the first planar piezoelectric element 14a is arranged on the first Between the conductive layer 12a and the second conductive layer 12b, in one embodiment, the first planar piezoelectric element 14a has a first bottom side 141a and a first top side 142a opposite to each other, and the first bottom side 141a and the first top side 142a are respectively in direct contact with the first conductive layer 12a and the second conductive layer 12b; the first packaging material 16a is arranged between the first conductive layer 12a and the second conductive layer 12b, and covers the circumference of the first planar piezoelectric element 14a side 143a. In one embodiment, as shown in FIG. 4, the first packaging material 16a does not completely cover the first conductive layer 12a and the second conductive layer 12b, but exposes the opposite surface 121 of the first conductive layer 12a and the second conductive layer 12b. peripheral part.

接續上述說明,第三導電層12c設置於支撐層28上,第三導電層12c與第一導電層12a並列配置,第三導電層12c及第一導電層12a之間存在一開槽32;第二平面壓電元件14b設置第三導電層12c上,於一實施例中,第二平面壓電元件14b具有相對的第二底側141b及第二頂側142b,第二底側141b與第三導電層12c直接接觸;第二封裝材16b設置於第三導電層12c上且包覆第二平面壓電元件14b的周側面143b,第二封裝材16b更設置於開槽32的一部分且包覆部分第三導電層12c,於一實施例中,如圖4所示,第二封裝材16b延伸至支撐層28上且覆蓋第三導電層12c鄰近第一導電層12a的一側。 Continuing the above description, the third conductive layer 12c is disposed on the supporting layer 28, the third conductive layer 12c is arranged side by side with the first conductive layer 12a, and there is a slot 32 between the third conductive layer 12c and the first conductive layer 12a; Two planar piezoelectric elements 14b are disposed on the third conductive layer 12c. In one embodiment, the second planar piezoelectric element 14b has a second bottom side 141b and a second top side 142b opposite to each other. The second bottom side 141b is connected to the third The conductive layer 12c is in direct contact; the second encapsulation material 16b is disposed on the third conductive layer 12c and covers the peripheral side 143b of the second planar piezoelectric element 14b, and the second encapsulation material 16b is further disposed in a part of the slot 32 and covers Part of the third conductive layer 12c, in one embodiment, as shown in FIG. 4 , the second encapsulation material 16b extends to the support layer 28 and covers a side of the third conductive layer 12c adjacent to the first conductive layer 12a.

接續上述說明,導電連接結構30設置於支撐層28上且填設於開槽32的另一部分,導電連接結構30並電性連接第一導電層12a及第二平面壓電元件14b。於一實施例中,如圖4所示,導電連接結構30包含縱向部301、第一橫向部302及第二橫向部303。縱向部301由開槽32沿著第二封裝材16b的一側設置;第一橫向部302由縱向部301的鄰近底端處橫向延伸以電性連接第一導電層12a,第一橫向部302例如電連接第一導電層12a之未被第一封裝材16a覆蓋的一部分周緣;第二橫向部303由縱向部301的頂端橫向延伸且電性連接第二平面壓電元件14b,例如電性連接第二平面壓電元件14b的第二頂側142b。 Continuing the above description, the conductive connection structure 30 is disposed on the support layer 28 and filled in another part of the slot 32 , and the conductive connection structure 30 is electrically connected to the first conductive layer 12 a and the second planar piezoelectric element 14 b. In one embodiment, as shown in FIG. 4 , the conductive connection structure 30 includes a longitudinal portion 301 , a first transverse portion 302 and a second transverse portion 303 . The longitudinal portion 301 is provided along one side of the second packaging material 16b by the slot 32; the first transverse portion 302 extends transversely from the bottom end of the longitudinal portion 301 to electrically connect the first conductive layer 12a, and the first transverse portion 302 For example, it is electrically connected to a portion of the periphery of the first conductive layer 12a that is not covered by the first encapsulation material 16a; the second transverse portion 303 extends laterally from the top of the longitudinal portion 301 and is electrically connected to the second planar piezoelectric element 14b, for example, electrically connected The second top side 142b of the second planar piezoelectric element 14b.

其中,導電連接結構30的材質可與第一導電層12a、第二導電層12b及第三導電層12c的材質相同,於一實施例中,導電連接結構30、第一導電層12a、第二導電層12b及第三導電層12c的材質可選自導電金屬、導電金屬氧化材料、導電膠及導電高分子材料其中之一或其組合。 Wherein, the material of the conductive connection structure 30 can be the same as that of the first conductive layer 12a, the second conductive layer 12b and the third conductive layer 12c. In one embodiment, the conductive connection structure 30, the first conductive layer 12a, the second The material of the conductive layer 12b and the third conductive layer 12c can be selected from one or a combination of conductive metal, conductive metal oxide material, conductive glue and conductive polymer material.

圖5是本創作一第五實施例壓電振動模組的結構示意圖,如圖5所示,壓電振動模組10D包含支撐層28、三導電層(分別為第一導電層12a、第二導電層12b及第三導電層12c)、兩平面壓電元件(分別為第一平面壓電元件14a及第二平面壓電元件14b)、兩封裝材(分別為第一封裝材16a及第二封裝材16b)及一導電連接結構30。第五實施例壓電振動模組10D與第四實施例壓電振動模組10C的差異主要在於,壓電振動模組10D的第一平面壓電元件14a的第一底側141a與第一導電層12a之間存在第一接著間隙20a,且第一封裝材16a更填入第一接著間隙20a,壓電振動模組10D的第二平面壓電元件14b的第二底側141b與第三導電層12c之間存在第二接著間隙20b,且第二封裝材16b更填入第二接著間隙20b。 Fig. 5 is a schematic structural view of the piezoelectric vibration module of the fifth embodiment of the present invention. As shown in Fig. 5, the piezoelectric vibration module 10D includes a support layer 28, three conductive layers (respectively the first conductive layer 12a, the second conductive layer conductive layer 12b and the third conductive layer 12c), two planar piezoelectric elements (respectively the first planar piezoelectric element 14a and the second planar piezoelectric element 14b), two packaging materials (respectively the first packaging material 16a and the second The packaging material 16 b ) and a conductive connection structure 30 . The difference between the piezoelectric vibration module 10D of the fifth embodiment and the piezoelectric vibration module 10C of the fourth embodiment is mainly that the first bottom side 141a of the first planar piezoelectric element 14a of the piezoelectric vibration module 10D is in contact with the first conductive There is a first bonding gap 20a between the layers 12a, and the first packaging material 16a is further filled into the first bonding gap 20a. The second bottom side 141b of the second planar piezoelectric element 14b of the piezoelectric vibration module 10D is connected to the third conductive gap 20a. There is a second bonding gap 20b between the layers 12c, and the second packaging material 16b further fills the second bonding gap 20b.

其中,第一接著間隙20a及第二接著間隙20b的間距例如為小於20微米,其中間距以小於15微米為較佳,以小於10微米為最佳;於一未繪示的實施例中,第一平面壓電元件14a的第一頂側142a與第二導電層12b之間亦可存在第一接著間隙20a,且第一封裝材16a更填入此第一接著間隙20a。又可選擇地,亦可以其他非導電接著層取代填入第一接著間隙20a/第二接著間隙20b的第一封裝材16a/第二封裝材16b,非導電接著層例如為矽膠、壓克力膠或環氧樹脂。 Wherein, the pitch between the first bonding gap 20a and the second bonding gap 20b is, for example, less than 20 microns, wherein the pitch is preferably smaller than 15 microns, and most optimally smaller than 10 microns; in an unshown embodiment, the first There may also be a first bonding gap 20a between the first top side 142a of the planar piezoelectric element 14a and the second conductive layer 12b, and the first packaging material 16a further fills the first bonding gap 20a. Optionally, other non-conductive bonding layers can also be used to replace the first packaging material 16a/second packaging material 16b filling the first bonding gap 20a/second bonding gap 20b. The non-conductive bonding layer is, for example, silicone, acrylic glue or epoxy.

圖6是本創作一第六實施例壓電振動模組的結構示意圖,如圖6所示,壓電振動模組10E包含支撐層28、三導電層(分別為第一導電層12a、第二導電層12b及第三導電層12c)、兩平面壓電元件(分別為第一平面壓電元件14a及第二平面壓電元件14b)、兩封裝材(分別為第一封裝材16a及第二封裝材16b)、導電連接結構30、第一導電接著層22a及第二導電接著層22b。第六實 施例壓電振動模組10E與第五實施例壓電振動模組10D的差異主要在於壓電振動模組10E包含有第一導電接著層22a及第二導電接著層22b,分別設置於第一接著間隙20a及第二接著間隙20b,其他配置則大致相同,於此不再贅述。其中導電接著層22a、22b的材料可包含錫膏、導電銀膠或導電膠帶等。 Fig. 6 is a schematic structural view of the piezoelectric vibration module of the sixth embodiment of the present invention. As shown in Fig. 6, the piezoelectric vibration module 10E includes a support layer 28, three conductive layers (respectively the first conductive layer 12a, the conductive layer 12b and the third conductive layer 12c), two planar piezoelectric elements (respectively the first planar piezoelectric element 14a and the second planar piezoelectric element 14b), two packaging materials (respectively the first packaging material 16a and the second The packaging material 16b), the conductive connection structure 30, the first conductive bonding layer 22a and the second conductive bonding layer 22b. Sixth reality The difference between the piezoelectric vibration module 10E of the embodiment and the piezoelectric vibration module 10D of the fifth embodiment is mainly that the piezoelectric vibration module 10E includes a first conductive bonding layer 22a and a second conductive bonding layer 22b, respectively disposed on the first Next to the gap 20a and the second subsequent gap 20b, other configurations are substantially the same, and will not be repeated here. The material of the conductive bonding layers 22a, 22b may include solder paste, conductive silver glue, or conductive tape.

在上述第四、第五及第六實施例中,如圖4、圖5及圖6所示,第一平面壓電元件14a及第二平面壓電元件14b為左右間隔設置,而與第一平面壓電元件14a直接或間接接觸的第二導電層12b、以及與第二平面壓電元件14b直接或間接接觸的第三導電層12c供電性連接至音源輸出裝置24的正極接點及負極接點,使得音源輸出裝置24輸出的音源訊號(電壓訊號)能夠傳導到第二導電層12b及第三導電層12c,藉以將音源訊號轉化為第一平面壓電元件14a及第二平面壓電元件14b的振動。於一實施例中,第二導電層12b及第三導電層12c可透過導電線路26電性連接至音源輸出裝置24。 In the above-mentioned fourth, fifth and sixth embodiments, as shown in Fig. 4, Fig. 5 and Fig. 6, the first planar piezoelectric element 14a and the second planar piezoelectric element 14b are spaced apart from the first The second conductive layer 12b that is in direct or indirect contact with the planar piezoelectric element 14a, and the third conductive layer 12c that is in direct or indirect contact with the second planar piezoelectric element 14b are electrically connected to the positive and negative contacts of the sound source output device 24. point, so that the sound source signal (voltage signal) output by the sound source output device 24 can be transmitted to the second conductive layer 12b and the third conductive layer 12c, so as to convert the sound source signal into the first planar piezoelectric element 14a and the second planar piezoelectric element 14b Vibration. In one embodiment, the second conductive layer 12b and the third conductive layer 12c can be electrically connected to the audio output device 24 through the conductive circuit 26 .

圖7是本創作一第七實施例壓電振動模組的結構示意圖,如圖7所示,壓電振動模組10F包含支撐層28、四導電層、兩平面壓電元件、兩封裝材及一導電連接結構30。於一實施例中,四導電層分別為第一導電層12a、第二導電層12b、第三導電層12c及第四導電層12d,兩平面壓電元件分別為第一平面壓電元件14a及第二平面壓電元件14b,兩封裝材分別為第一封裝材16a及第二封裝材16b。其中,第一導電層12a、第一平面壓電元件14a、第二導電層12b及第一封裝材16a的結構與彼此間的配置關係已揭示於第四實施例中,於此不再贅述。 Fig. 7 is a structural schematic diagram of the piezoelectric vibration module of the seventh embodiment of the present invention. As shown in Fig. 7, the piezoelectric vibration module 10F includes a support layer 28, four conductive layers, two planar piezoelectric elements, two packaging materials and A conductive connection structure 30 . In one embodiment, the four conductive layers are respectively the first conductive layer 12a, the second conductive layer 12b, the third conductive layer 12c and the fourth conductive layer 12d, and the two planar piezoelectric elements are respectively the first planar piezoelectric element 14a and the fourth conductive layer 12d. The second planar piezoelectric element 14b and the two encapsulation materials are respectively the first encapsulation material 16a and the second encapsulation material 16b. Wherein, the structure and arrangement relationship among the first conductive layer 12 a , the first planar piezoelectric element 14 a , the second conductive layer 12 b and the first encapsulation material 16 a have been disclosed in the fourth embodiment and will not be repeated here.

接續上述說明,第三導電層12c設置於支撐層28上,第三導電層12c與第一導電層12a並列配置,第三導電層12c及第一導電層12a之間存在一開 槽32;第四導電層12d與第三導電層12c彼此面對且上下間隔設置;第二平面壓電元件14b設置於第三導電層12c及第四導電層12d之間,於一實施例中,第二平面壓電元件14b具有相對的第二底側141b及第二頂側142b,第二底側141b及第二頂側142b分別與第三導電層12c及第四導電層12d直接接觸;第二封裝材16b設置於第三導電層12c及第四導電層12d之間,且包覆第二平面壓電元件14b的周側面143b,第二封裝材16b更設置於開槽32的一部分且包覆部分第三導電層12c,於一實施例中,如圖7所示,第二封裝材16b延伸至支撐層28上且附覆蓋第三導電層12c之鄰近第一導電層12a的一側。 Continuing the above description, the third conductive layer 12c is disposed on the support layer 28, the third conductive layer 12c is arranged side by side with the first conductive layer 12a, and there is an opening between the third conductive layer 12c and the first conductive layer 12a. groove 32; the fourth conductive layer 12d and the third conductive layer 12c face each other and are spaced up and down; the second planar piezoelectric element 14b is arranged between the third conductive layer 12c and the fourth conductive layer 12d, in one embodiment , the second planar piezoelectric element 14b has an opposite second bottom side 141b and a second top side 142b, the second bottom side 141b and the second top side 142b are respectively in direct contact with the third conductive layer 12c and the fourth conductive layer 12d; The second packaging material 16b is disposed between the third conductive layer 12c and the fourth conductive layer 12d, and covers the peripheral side surface 143b of the second planar piezoelectric element 14b, and the second packaging material 16b is further disposed in a part of the slot 32 and Cover part of the third conductive layer 12c. In one embodiment, as shown in FIG. .

接續上述說明,導電連接結構30設置於支撐層28上且填設於開槽32的另一部分,導電連接結構30並電性連接第一導電層12a及第四導電層12d。於一實施例中,如圖7所示,導電連接結構30包含縱向部301、第一橫向部302及第二橫向部303。縱向部301由開槽32沿著第二封裝材16b及第四導電層12d的一側設置;第一橫向部302由縱向部301的鄰近底端處橫向延伸以電性連接第一導電層12a,第一橫向部302例如電連接第一導電層12a之未被第一封裝材16a覆蓋的一部分周緣;第二橫向部303由縱向部301的頂端橫向延伸且電性連接第四導電層12d。 Continuing the above description, the conductive connection structure 30 is disposed on the supporting layer 28 and filled in another part of the slot 32 , and the conductive connection structure 30 is electrically connected to the first conductive layer 12 a and the fourth conductive layer 12 d. In one embodiment, as shown in FIG. 7 , the conductive connection structure 30 includes a longitudinal portion 301 , a first transverse portion 302 and a second transverse portion 303 . The longitudinal portion 301 is disposed along one side of the second packaging material 16b and the fourth conductive layer 12d through the slot 32; the first transverse portion 302 extends transversely from the bottom end of the longitudinal portion 301 to electrically connect the first conductive layer 12a For example, the first transverse portion 302 is electrically connected to a portion of the periphery of the first conductive layer 12a not covered by the first packaging material 16a; the second transverse portion 303 extends laterally from the top of the vertical portion 301 and is electrically connected to the fourth conductive layer 12d.

其中,導電連接結構30的材質可與第一導電層12a、第二導電層12b、第三導電層12c及第四導電層12d的材質相同,於一實施例中,導電連接結構30、第一導電層12a、第二導電層12b、第三導電層12c及第四導電層12d的材質可選自導電金屬、導電金屬氧化材料、導電膠及導電高分子材料其中之一或其組合。 Wherein, the material of the conductive connection structure 30 can be the same as that of the first conductive layer 12a, the second conductive layer 12b, the third conductive layer 12c and the fourth conductive layer 12d. In one embodiment, the conductive connection structure 30, the first The material of the conductive layer 12a, the second conductive layer 12b, the third conductive layer 12c and the fourth conductive layer 12d can be selected from one or a combination of conductive metal, conductive metal oxide material, conductive glue and conductive polymer material.

圖8是本創作一第八實施例壓電振動模組的結構示意圖,如圖8所示,第八實施例壓電振動模組10G與第七實施例壓電振動模組10F的差異主要在於壓電振動模組10G的第一平面壓電元件14a的第一底側141a與第一導電層12a之間存在第一接著間隙20a,且第一封裝材16a更填入第一接著間隙20a,壓電振動模組10G的第二平面壓電元件14b的第二底側141b與第三導電層12c之間存在第二接著間隙20b,且第二封裝材16b更填入第二接著間隙。 Fig. 8 is a schematic structural diagram of the piezoelectric vibration module of the eighth embodiment of the present invention. As shown in Fig. 8, the difference between the piezoelectric vibration module 10G of the eighth embodiment and the piezoelectric vibration module 10F of the seventh embodiment mainly lies in There is a first bonding gap 20a between the first bottom side 141a of the first planar piezoelectric element 14a of the piezoelectric vibration module 10G and the first conductive layer 12a, and the first packaging material 16a further fills the first bonding gap 20a, There is a second bonding gap 20b between the second bottom side 141b of the second planar piezoelectric element 14b of the piezoelectric vibration module 10G and the third conductive layer 12c, and the second encapsulation material 16b further fills the second bonding gap.

其中,第一接著間隙20a及第二接著間隙20b的間距例如為小於20微米,其中間距以小於15微米為較佳,以小於10微米為最佳。又於一未繪示的實施例中,第一平面壓電元件14a的第一頂側142a與第二導電層12b之間亦可存在第一接著間隙20a,且第一封裝材16a更填入此第一接著間隙20a,而第二平面壓電元件14b的第二頂側142b與第四導電層12d之間亦可存在第二接著間隙20b,且第二封裝材16b更填入此第二接著間隙20b。又可選擇地,亦可以其他非導電接著層取代填入第一接著間隙20a/第二接著間隙20b的第一封裝材16a/第二封裝材16b,非導電接著層例如為矽膠、壓克力膠或環氧樹脂。 Wherein, the distance between the first bonding gap 20 a and the second bonding gap 20 b is, for example, less than 20 microns, preferably less than 15 microns, most preferably less than 10 microns. In another embodiment not shown, there may also be a first bonding gap 20a between the first top side 142a of the first planar piezoelectric element 14a and the second conductive layer 12b, and the first packaging material 16a is further filled into the This first bonding gap 20a, and there may also be a second bonding gap 20b between the second top side 142b of the second planar piezoelectric element 14b and the fourth conductive layer 12d, and the second encapsulation material 16b is further filled into this second gap. Then gap 20b. Optionally, other non-conductive bonding layers can also be used to replace the first packaging material 16a/second packaging material 16b filling the first bonding gap 20a/second bonding gap 20b. The non-conductive bonding layer is, for example, silicone, acrylic glue or epoxy.

圖9是本創作一第九實施例壓電振動模組的結構示意圖,如圖9所示,第九實施例壓電振動模組10H與第八實施例壓電振動模組10G的差異主要在於壓電振動模組10H包含有第一導電接著層22a及第二導電接著層22b,分別設置於第一接著間隙20a及第二接著間隙20b,其他配置則大致相同,於此不再贅述。其中第一導電接著層22a及第二導電接著層22b的材料可包含錫膏、導電銀膠或導電膠帶等。 Fig. 9 is a structural schematic diagram of the piezoelectric vibration module of the ninth embodiment of the invention. As shown in Fig. 9, the difference between the piezoelectric vibration module 10H of the ninth embodiment and the piezoelectric vibration module 10G of the eighth embodiment mainly lies in The piezoelectric vibration module 10H includes a first conductive bonding layer 22 a and a second conductive bonding layer 22 b respectively disposed in the first bonding gap 20 a and the second bonding gap 20 b. Other configurations are substantially the same and will not be repeated here. The materials of the first conductive adhesive layer 22 a and the second conductive adhesive layer 22 b may include solder paste, conductive silver glue, or conductive tape.

圖10A是本創作一第十實施例壓電振動模組的結構示意圖,圖10B是本創作一第十實施例壓電振動模組的俯視示意圖,如圖10A及圖10B所示,壓電振動模組10I包含第一導電層12a、兩平面壓電元件14、14'、兩封裝材16、16'、、結合層34及第二導電層12b。兩平面壓電元件14、14'並列設置於第一導電層12a上,於一實施例中,平面壓電元件14/14'包含有壓電材料層44與兩導電膠層46、46';兩封裝材16、16'分別包覆兩平面壓電元件14、14'的周側面,可選擇地,於未繪示的實施例中,封裝材16/16'更可包覆平面壓電元件14/14'的底側,而填覆於平面壓電元件14/14'及第一導電層12a之間,於一實施例中,兩個被封裝材16/16'所包覆的平面壓電元件14/14'之間可為緊鄰或者具有間距;結合層34設置於第一導電層12a上,且將兩封裝材16、16'固接在一起,於一實施例中,結合層34上形成有通孔36;第二導電層12b設置於結合層34上,且電性連接兩平面壓電元件14、14'。 Fig. 10A is a structural schematic diagram of the piezoelectric vibration module of the tenth embodiment of the first invention, and Fig. 10B is a schematic top view of the piezoelectric vibration module of the tenth embodiment of the first invention, as shown in Fig. 10A and Fig. 10B, the piezoelectric vibration The module 10I includes a first conductive layer 12a, two planar piezoelectric elements 14, 14', two packaging materials 16, 16', a bonding layer 34 and a second conductive layer 12b. Two planar piezoelectric elements 14, 14' are arranged side by side on the first conductive layer 12a. In one embodiment, the planar piezoelectric element 14/14' includes a piezoelectric material layer 44 and two conductive adhesive layers 46, 46'; The two encapsulation materials 16, 16' cover the peripheral sides of the two planar piezoelectric elements 14, 14' respectively. Optionally, in an embodiment not shown, the encapsulation materials 16/16' can further enclose the planar piezoelectric elements 14/14', and is filled between the planar piezoelectric element 14/14' and the first conductive layer 12a. In one embodiment, two planar piezoelectric elements covered by the packaging material 16/16' The electrical components 14/14' can be adjacent to each other or have a gap; the bonding layer 34 is disposed on the first conductive layer 12a, and fixes the two packaging materials 16, 16' together. In one embodiment, the bonding layer 34 A through hole 36 is formed thereon; the second conductive layer 12b is disposed on the bonding layer 34, and electrically connects the two planar piezoelectric elements 14, 14'.

於一實施例中,如圖10B所示,壓電振動模組10I更包含兩外部連接部38、38',其中一外部連接部38電性連接第二導電層12b,另一外部連接部38'經由結合層34上的通孔36電性連接至第一導電層12a。 In one embodiment, as shown in FIG. 10B , the piezoelectric vibration module 10I further includes two external connection parts 38, 38', wherein one external connection part 38 is electrically connected to the second conductive layer 12b, and the other external connection part 38 ′ is electrically connected to the first conductive layer 12a through the through hole 36 on the bonding layer 34 .

於一實施例中,第一導電層12a包含有銅箔,第一導電層12a的厚度介於5微米至35微米之間;又平面壓電元件14/14'的厚度介於50微米至300微米之間,結合層34的厚度介於25微米至200微米之間,亦即結合層34的厚度薄於平面壓電元件14/14'的厚度;第二導電層12b的厚度介於10微米至50微米之間。又如圖10B所示,於一實施例中,結合層34的涵蓋區域可大於或等於封裝材16、16'的涵蓋區域,又第二導電層12b的涵蓋區域為小於封裝材16、16'的涵蓋區域。 In one embodiment, the first conductive layer 12a includes copper foil, the thickness of the first conductive layer 12a is between 5 microns and 35 microns; and the thickness of the planar piezoelectric element 14/14' is between 50 microns and 300 microns Between microns, the thickness of the bonding layer 34 is between 25 microns and 200 microns, that is, the thickness of the bonding layer 34 is thinner than the thickness of the planar piezoelectric element 14/14'; the thickness of the second conductive layer 12b is between 10 microns to 50 microns. As shown in FIG. 10B, in one embodiment, the coverage area of the bonding layer 34 may be greater than or equal to the coverage area of the encapsulation material 16, 16', and the coverage area of the second conductive layer 12b is smaller than the encapsulation material 16, 16' coverage area.

圖11是本創作一第十實施例壓電振動模組的其中一製程階段示意圖。如圖11所示,一基板結構40包含一絕緣層42及第一導電層12a,於一實施例中,絕緣層42例如為玻璃纖維,第一導電層12a為銅箔,第一導電層12a設置於絕緣層42的上表面,多個平面壓電元件14、14'兩兩一組並列設置於第一導電層12a上,每一平面壓電元件14/14'的至少周側面並被封裝材16/16'所包覆,且兩兩一組的平面壓電元件14、14'各自以結合層34固接在一起;又兩兩一組的平面壓電元件14、14'並以第二導電層12b電性連接在一起。其中,結合層34並形成有通孔36。之後,藉由切單及絕緣層42的剝除而形成如圖10A所示的壓電振動模組10I。 FIG. 11 is a schematic diagram of one process stage of the piezoelectric vibration module according to the tenth embodiment of the present invention. As shown in FIG. 11 , a substrate structure 40 includes an insulating layer 42 and a first conductive layer 12a. In one embodiment, the insulating layer 42 is, for example, glass fiber, the first conductive layer 12a is copper foil, and the first conductive layer 12a Arranged on the upper surface of the insulating layer 42, a plurality of planar piezoelectric elements 14, 14' are arranged side by side on the first conductive layer 12a in pairs, and at least the peripheral side of each planar piezoelectric element 14/14' is encapsulated material 16/16', and the two-by-two planar piezoelectric elements 14, 14' are fixed together with the bonding layer 34; The two conductive layers 12b are electrically connected together. Wherein, the bonding layer 34 is formed with a through hole 36 . Afterwards, the piezoelectric vibration module 10I shown in FIG. 10A is formed by singulation and stripping of the insulating layer 42 .

在上述不同型態實施例的壓電振動模組中,平面壓電元件包含有壓電材料層44(標示於圖10A)與兩導電膠層46、46'(標示於圖10A),兩導電膠層46、46'分別設置於壓電材料層44的兩表面,於一實施例中,壓電材料層44優選為壓電複合材料,例如由壓電陶瓷和聚合物兩相複合而成的壓電復合材料,壓電材料層44亦可為壓電陶瓷或壓電單晶等傳統壓電材料。 In the above-mentioned piezoelectric vibration modules of different types of embodiments, the planar piezoelectric element includes a piezoelectric material layer 44 (marked in FIG. 10A ) and two conductive adhesive layers 46, 46' (marked in FIG. 10A ). Adhesive layers 46, 46' are respectively disposed on both surfaces of the piezoelectric material layer 44. In one embodiment, the piezoelectric material layer 44 is preferably a piezoelectric composite material, such as a two-phase composite of piezoelectric ceramics and polymers. Piezoelectric composite materials, the piezoelectric material layer 44 can also be traditional piezoelectric materials such as piezoelectric ceramics or piezoelectric single crystals.

根據上述不同型態實施例的壓電振動模組,本創作基於平面壓電元件之間的上下配置或左右並列設置而具有不同的厚度,其中各平面壓電元件的壓電材料層也有不同厚度的選擇。由於各壓電材料層的厚度不同,各壓電材料層的諧振頻率不同,使得疊堆或並列的平面壓電元件之間存在多種模態,即存在多個諧振頻率。本創作壓電振動模組通過合理設計各壓電材料層的厚度,使平面壓電元件中各壓電材料層的諧振頻率相互靠近並耦合,在較寬的頻率範圍內同時工作,可以使其組合頻率回應不產生間斷和過深的凹 穀,在這一頻帶內將形成複合多模振動,即能有效地拓展壓電振動模組的工作頻寬,實現高頻、寬頻地發送聲波。 According to the above-mentioned piezoelectric vibration modules of different types of embodiments, this creation has different thicknesses based on the arrangement of the planar piezoelectric elements up and down or side by side, and the piezoelectric material layers of each planar piezoelectric element also have different thicknesses. s Choice. Since the thickness of each piezoelectric material layer is different, the resonant frequency of each piezoelectric material layer is different, so that there are multiple modes between stacked or parallel planar piezoelectric elements, that is, there are multiple resonant frequencies. By rationally designing the thickness of each piezoelectric material layer, the piezoelectric vibration module of this creation makes the resonant frequency of each piezoelectric material layer in the planar piezoelectric element close to and couples with each other, and works simultaneously in a wide frequency range, which can make it Combined frequency response without discontinuities and deep notches In this frequency band, complex multi-mode vibration will be formed, which can effectively expand the working bandwidth of the piezoelectric vibration module and realize high-frequency and wide-band transmission of sound waves.

圖12A至圖12D所示是本創作不同態樣之平面壓電元件示意圖,此不同態樣的平面壓電元件可選擇地用以取代上述實施例所繪示的平面壓電元件。如圖12A至圖12D所示,平面壓電元件50包含壓電材料層44、兩導電膠層46、46'及表面處理層52。壓電材料層44包含相對兩表面441、441'與周側面442,周側面442位於兩表面441、441'之間且連接兩表面441、441';導電膠層46、46'分別設置於壓電材料層44的兩表面441、441',每一導電膠層46/46'包含顯露表面461/461'及周壁462/462',於一實施例中,如圖12A及圖12B所示,導電膠層46/46'的顯露表面461/461'的面積與壓電材料層44之表面441/441'的面積相等,於另一實施例中,如圖12C及圖12D所示,導電膠層46/46'的顯露表面461/461'的面積小於壓電材料層44之表面441/441'的面積,亦即兩導電膠層46、46'分別未完全覆蓋兩表面441、441'。 FIG. 12A to FIG. 12D are schematic diagrams of different aspects of planar piezoelectric elements of the present invention, and these different aspects of planar piezoelectric elements can be optionally used to replace the planar piezoelectric elements shown in the above-mentioned embodiments. As shown in FIGS. 12A to 12D , the planar piezoelectric element 50 includes a piezoelectric material layer 44 , two conductive adhesive layers 46 , 46 ′ and a surface treatment layer 52 . The piezoelectric material layer 44 includes two opposite surfaces 441, 441' and a peripheral side 442, the peripheral side 442 is located between the two surfaces 441, 441' and connects the two surfaces 441, 441'; The two surfaces 441, 441' of the electrical material layer 44, each conductive adhesive layer 46/46' includes an exposed surface 461/461' and a surrounding wall 462/462', in one embodiment, as shown in Figure 12A and Figure 12B, The area of the exposed surface 461/461' of the conductive adhesive layer 46/46' is equal to the area of the surface 441/441' of the piezoelectric material layer 44. In another embodiment, as shown in Figure 12C and Figure 12D, the conductive adhesive The area of the exposed surface 461/461' of the layer 46/46' is smaller than the area of the surface 441/441' of the piezoelectric material layer 44, that is, the two conductive adhesive layers 46, 46' do not completely cover the two surfaces 441, 441' respectively.

接續上述說明,表面處理層52至少覆蓋壓電材料層44的周側面442、導電膠層46、46'的周壁462、462'、以及其中一導電膠層46的顯露表面461。如圖12B所示,表面處理層52覆蓋壓電材料層44的周側面442,以及上方導電膠層46的周壁462及顯露表面461;如圖12D所示,由於導電膠層46未完全覆蓋壓電材料層44的表面441,因此表面處理層52更覆蓋了未被導電膠層46覆蓋的部分表面441。又如圖12A所示,表面處理層52更覆蓋下方導電膠層46'的周壁462'及顯露表面461,亦即整個平面壓電元件50皆塗佈有表面處理層52;對應地,如圖12C所示,表面處理層52除了覆蓋下方導電膠層46'的周 壁462'及顯露表面461'之外,亦覆蓋壓電材料層44之未被下方導電膠層46'覆蓋的部分表面441'。 Following the above description, the surface treatment layer 52 at least covers the peripheral side 442 of the piezoelectric material layer 44 , the peripheral walls 462 , 462 ′ of the conductive adhesive layers 46 , 46 ′, and the exposed surface 461 of one of the conductive adhesive layers 46 . As shown in Figure 12B, the surface treatment layer 52 covers the peripheral side 442 of the piezoelectric material layer 44, and the peripheral wall 462 and exposed surface 461 of the upper conductive adhesive layer 46; as shown in Figure 12D, since the conductive adhesive layer 46 does not completely cover the pressure The surface 441 of the electrical material layer 44 , therefore the surface treatment layer 52 covers the part of the surface 441 not covered by the conductive adhesive layer 46 . As shown in FIG. 12A, the surface treatment layer 52 further covers the peripheral wall 462' and the exposed surface 461 of the lower conductive adhesive layer 46', that is, the entire planar piezoelectric element 50 is coated with the surface treatment layer 52; correspondingly, as shown in FIG. As shown in 12C, the surface treatment layer 52 covers the periphery of the conductive adhesive layer 46' below. In addition to the wall 462 ′ and the exposed surface 461 ′, it also covers a part of the surface 441 ′ of the piezoelectric material layer 44 not covered by the underlying conductive adhesive layer 46 ′.

其中,表面處理層52的材質可為有機塗層或者無機塗層,有機塗層例如為聚對二甲苯類或樹脂等,無機塗層例如為氧化物(SiO、SiN、SiON、...)、類金剛石碳(DLC)或SiC等。又表面處理層的厚度為小於10微米,其中小於1微米最佳,小於5微米次之。 Wherein, the material of the surface treatment layer 52 can be an organic coating or an inorganic coating, the organic coating is, for example, parylene or resin, etc., and the inorganic coating is, for example, an oxide (SiO, SiN, SiON, ...) , diamond-like carbon (DLC) or SiC, etc. In addition, the thickness of the surface treatment layer is less than 10 microns, preferably less than 1 micron, less than 5 microns.

在本創作實施例平面壓電元件中,藉由表面處理層的塗布可於後續以封裝材包覆平面壓電元件時,有效保護壓電材料層,避免壓電材料層的損傷而影響諧振頻率。 In the planar piezoelectric element of this creative embodiment, the coating of the surface treatment layer can effectively protect the piezoelectric material layer when the planar piezoelectric element is subsequently covered with an encapsulation material, avoiding damage to the piezoelectric material layer and affecting the resonance frequency .

雖然本創作已以實施例揭露如上,然其並非用以限定本創作,本創作所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作些許之更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 Although this creation has been disclosed above with the embodiment, it is not intended to limit this creation. Those with ordinary knowledge in the technical field of this creation can make some changes and modifications without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation should be defined by the scope of the attached patent application.

10:壓電振動模組 10: Piezoelectric vibration module

12、12':導電層 12, 12': conductive layer

14、14':平面壓電元件 14, 14': planar piezoelectric element

16:封裝材 16: Packaging material

18:壓電材料分離間隙 18: Piezoelectric material separation gap

20:接著間隙 20: Follow the gap

24:音源輸出裝置 24: Audio output device

26:導電線路 26: Conductive circuit

Claims (20)

一種壓電振動模組,包含:兩導電層,彼此面對且間隔設置;兩平面壓電元件,彼此面對且設置於該兩導電層之間,其中該兩平面壓電元件之間存在一壓電材料分離間隙;以及一封裝材,設置於該兩導電層之間,包覆該兩平面壓電元件,且填滿該壓電材料分離間隙。 A piezoelectric vibration module, comprising: two conductive layers facing each other and arranged at intervals; two planar piezoelectric elements facing each other and arranged between the two conductive layers, wherein there is a a piezoelectric material separation gap; and an encapsulation material, disposed between the two conductive layers, covering the two planar piezoelectric elements, and filling the piezoelectric material separation gap. 如請求項1所述的壓電振動模組,其中,該壓電材料分離間隙的間距小於20微米。 The piezoelectric vibration module as claimed in Claim 1, wherein the spacing of the piezoelectric material separation gap is less than 20 microns. 如請求項1所述的壓電振動模組,其中,該兩平面壓電元件分別與該兩導電層直接接觸。 The piezoelectric vibration module according to Claim 1, wherein the two planar piezoelectric elements are respectively in direct contact with the two conductive layers. 如請求項1所述的壓電振動模組,其中,該兩平面壓電元件至少其中之一與鄰近的該兩導電層至少其中之一之間存在一接著間隙,該封裝材更填入該接著間隙。 The piezoelectric vibration module as claimed in claim 1, wherein there is a bonding gap between at least one of the two planar piezoelectric elements and at least one of the adjacent two conductive layers, and the encapsulation material further fills the Then gap. 如請求項4所述的壓電振動模組,更包含一非導電接著層,該兩平面壓電元件至少其中之一與鄰近的該兩導電層至少其中之一之間存在一接著間隙,該非導電接著層設置於該接著間隙,該非導電接著層為矽膠、壓克力膠或環氧樹脂。 The piezoelectric vibration module as described in Claim 4 further includes a non-conductive bonding layer, and there is a bonding gap between at least one of the two planar piezoelectric elements and at least one of the adjacent two conductive layers, the non-conductive The conductive bonding layer is disposed in the bonding gap, and the non-conductive bonding layer is made of silicon glue, acrylic glue or epoxy resin. 如請求項4所述的壓電振動模組,更包含一導電接著層,該兩平面壓電元件至少其中之一與鄰近的該兩導電層至少其中之一之間存在一接著間隙,該導電接著層設置於該接著間隙。 The piezoelectric vibration module as described in Claim 4 further comprises a conductive bonding layer, and there is an bonding gap between at least one of the two planar piezoelectric elements and at least one of the adjacent two conductive layers, and the conductive The following layer is disposed in the following gap. 如請求項4或5或6所述的壓電振動模組,其中,該接著間隙的間距小於20微米。 The piezoelectric vibration module as claimed in claim 4, 5 or 6, wherein the pitch of the connecting gap is less than 20 microns. 如請求項1所述的壓電振動模組,其中,該兩導電層選自導電金屬、導電金屬氧化材料、導電膠及導電高分子材料其中之一或其組合。 The piezoelectric vibration module according to claim 1, wherein the two conductive layers are selected from one or a combination of conductive metal, conductive metal oxide material, conductive glue, and conductive polymer material. 如請求項1所述的壓電振動模組,其中,該兩導電層分別供電性連接至一音源輸出裝置的正極接點及負極接點。 The piezoelectric vibration module according to Claim 1, wherein the two conductive layers are electrically connected to a positive contact and a negative contact of a sound source output device, respectively. 一種壓電振動模組,包含:一支撐層;一第一導電層,設置於該支撐層上;一第二導電層,與該第一導電層彼此面對且間隔設置;一第一平面壓電元件,設置於該第一導電層及該第二導電層之間;一第一封裝材,至少設置於該第一導電層及該第二導電層之間,且至少包覆該第一平面壓電元件的周側面;一第三導電層,設置於該支撐層上,且與該第一導電層之間存在一開槽;一第二平面壓電元件,設置該第三導電層上;一第二封裝材,至少設置於該第三導電層上且至少包覆該第二平面壓電元件的周側面,該第二封裝材更設置於該開槽的一部分且包覆部分該第三導電層;以及一導電連接結構,設置於該支撐層上且填設於該開槽的另一部分,該導電連接結構並電性連接該第一導電層及該第二平面壓電元件。 A piezoelectric vibration module, comprising: a supporting layer; a first conductive layer arranged on the supporting layer; a second conductive layer facing the first conductive layer and arranged at intervals; a first plane pressing An electric element is arranged between the first conductive layer and the second conductive layer; a first packaging material is at least arranged between the first conductive layer and the second conductive layer and covers at least the first plane The peripheral side of the piezoelectric element; a third conductive layer arranged on the supporting layer, and there is a slot between the first conductive layer; a second planar piezoelectric element arranged on the third conductive layer; A second encapsulation material, at least disposed on the third conductive layer and covering at least the peripheral side of the second planar piezoelectric element, the second encapsulation material is further disposed on a part of the slot and partially covers the third a conductive layer; and a conductive connection structure disposed on the support layer and filling another part of the slot, the conductive connection structure electrically connects the first conductive layer and the second planar piezoelectric element. 如請求項10所述的壓電振動模組,其中,該導電連接結構包含一縱向部、一第一橫向部及一第二橫向部,該縱向部由該開槽沿著該第二封裝 材的一側設置,該第一橫向部由該縱向部的鄰近底端處橫向延伸以電性連接該第一導電層,該第二橫向部由該縱向部的頂端橫向延伸且電性連接該第二平面壓電元件。 The piezoelectric vibration module according to claim 10, wherein the conductive connection structure includes a longitudinal portion, a first transverse portion, and a second transverse portion, and the longitudinal portion is formed along the second package through the slot one side of the material, the first transverse portion extends transversely from the bottom end of the longitudinal portion to electrically connect the first conductive layer, the second transverse portion extends transversely from the top end of the longitudinal portion and electrically connects the A second planar piezoelectric element. 如請求項10所述的壓電振動模組,更包含一第四導電層,設置於該第二平面壓電元件之遠離該第三導電層的另一側,使該第四導電層與該第三導電層彼此面對且間隔設置,又該第二封裝材設置於該第三導電層及該第四導電層之間。 The piezoelectric vibration module as described in Claim 10 further includes a fourth conductive layer disposed on the other side of the second planar piezoelectric element away from the third conductive layer, so that the fourth conductive layer and the The third conductive layers face each other and are arranged at intervals, and the second packaging material is arranged between the third conductive layer and the fourth conductive layer. 如請求項12所述的壓電振動模組,其中,該導電連接結構包含一縱向部、一第一橫向部及一第二橫向部,該縱向部由該開槽沿著該第二封裝材及該第四導電層的一側設置,該第一橫向部由該縱向部的鄰近底端處橫向延伸以電性連接該第一導電層,該第二橫向部由該縱向部的頂端橫向延伸且電性連接該第四導電層。 The piezoelectric vibration module according to claim 12, wherein the conductive connection structure includes a longitudinal portion, a first transverse portion, and a second transverse portion, and the longitudinal portion is formed along the second packaging material through the slot and one side of the fourth conductive layer, the first transverse portion extends transversely from the bottom end of the longitudinal portion to electrically connect the first conductive layer, the second transverse portion extends transversely from the top end of the longitudinal portion And electrically connected to the fourth conductive layer. 如請求項10或12所述的壓電振動模組,其中,該第一平面壓電元件具有相對的一第一底側及一第一頂側,該第一底側及該第一頂側分別與該第一導電層及該第二導電層直接接觸,該第二平面壓電元件具有一第二底側,該第二底側與該第三導電層直接接觸。 The piezoelectric vibration module according to claim 10 or 12, wherein the first planar piezoelectric element has a first bottom side and a first top side opposite to each other, and the first bottom side and the first top side In direct contact with the first conductive layer and the second conductive layer respectively, the second planar piezoelectric element has a second bottom side, and the second bottom side is in direct contact with the third conductive layer. 如請求項10或12所述的壓電振動模組,其中,該第一平面壓電元件具有相對的一第一底側及一第一頂側,該第一底側及該第一頂側至少其中之一分別與該第一導電層及該第二導電層至少其中之一之間存在一第一接著間隙,該第二平面壓電元件具有一第二底側,該第二底側與該第三導電層之間存在一第二接著間隙,其中,該第一封裝材更填入該第一接著間隙,該第二封裝材更填入該第二接著間隙。 The piezoelectric vibration module according to claim 10 or 12, wherein the first planar piezoelectric element has a first bottom side and a first top side opposite to each other, and the first bottom side and the first top side There is a first connection gap between at least one of them and at least one of the first conductive layer and the second conductive layer, and the second planar piezoelectric element has a second bottom side, and the second bottom side is connected to the second bottom side. There is a second bonding gap between the third conductive layers, wherein the first packaging material further fills the first bonding gap, and the second packaging material further fills the second bonding gap. 如請求項10或12所述的壓電振動模組,更包含一第一導電接著層及一第二導電接著層,該第一平面壓電元件具有相對的一第一底側及一第一頂側,該第一底側及該第一頂側至少其中之一分別與該第一導電層及該第二導電層至少其中之一之間存在一第一接著間隙,該第二平面壓電元件具有一第二底側,該第二底側與該第三導電層之間存在一第二接著間隙,其中該第一導電接著層設置於該第一接著間隙,該第二導電接著層設置於該第二接著間隙。 The piezoelectric vibration module as described in Claim 10 or 12 further comprises a first conductive bonding layer and a second conductive bonding layer, and the first planar piezoelectric element has a first bottom side and a first bottom side opposite to each other. On the top side, there is a first bonding gap between at least one of the first bottom side and the first top side and at least one of the first conductive layer and the second conductive layer respectively, and the second planar piezoelectric The element has a second bottom side, and there is a second bonding gap between the second bottom side and the third conductive layer, wherein the first conductive bonding layer is disposed in the first bonding gap, and the second conductive bonding layer is disposed at the second subsequent gap. 一種壓電振動模組,包含:一第一導電層;兩平面壓電元件,並列設置於該第一導電層上;兩封裝材,分別至少包覆該兩平面壓電元件的周側面;一結合層,設置於該第一導電層上,且將該兩封裝材固接在一起;以及一第二導電層,設置於該結合層上,且電性連接該兩平面壓電元件。 A piezoelectric vibration module, comprising: a first conductive layer; two planar piezoelectric elements arranged side by side on the first conductive layer; two packaging materials, respectively covering at least the peripheral sides of the two planar piezoelectric elements; A combination layer is arranged on the first conductive layer, and the two packaging materials are fixed together; and a second conductive layer is arranged on the combination layer, and is electrically connected to the two planar piezoelectric elements. 如請求項17所述的壓電振動模組,其中,該第一導電層包含一銅箔,該第一導電層的厚度介於5微米至35微米之間。 The piezoelectric vibration module as claimed in claim 17, wherein the first conductive layer comprises a copper foil, and the thickness of the first conductive layer is between 5 microns and 35 microns. 如請求項17所述的壓電振動模組,其中,每一該兩平面壓電元件的厚度介於50微米至300微米之間,該結合層的厚度介於25微米至200微米之間。 The piezoelectric vibration module as claimed in claim 17, wherein the thickness of each of the two planar piezoelectric elements is between 50 microns and 300 microns, and the thickness of the bonding layer is between 25 microns and 200 microns. 如請求項17所述的壓電振動模組,其中,該第二導電層的厚度介於10微米至50微米之間。 The piezoelectric vibration module as claimed in claim 17, wherein the thickness of the second conductive layer is between 10 microns and 50 microns.
TW111209295U 2021-09-09 2022-08-26 Piezoelectric vibration module and planar piezoelectric element TWM637912U (en)

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