TWM636876U - Image capturing device for photomask - Google Patents
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Abstract
一種對光罩取像之取像裝置,包含有:一光源;一狹縫板;一半反射鏡;一可調焦物鏡;以及一攝影機;其中,該光源所發出的光係通過該狹縫板、該半反射鏡的反射再穿過該可調焦物鏡,而形成沿照射方向由寬漸窄的條狀光束,進而照射於一光罩上的半反射膜的表面,以及穿透該半反射膜而而照射於該光罩的表面,該半反射膜的表面被照明的區域呈長條狀且具有一第一寬度,該光罩的表面被照明的區域呈長條狀且具有一第二寬度;其中,該第一寬度係為該第二寬度的十倍或十倍以上。An imaging device for imaging a photomask, comprising: a light source; a slit plate; a half mirror; an adjustable focus objective lens; and a camera; wherein, the light emitted by the light source passes through the slit plate , the reflection of the semi-reflective mirror passes through the adjustable focus objective lens to form a strip-shaped light beam that gradually narrows along the irradiation direction, and then irradiates the surface of the semi-reflective film on a photomask, and penetrates the semi-reflective The film is irradiated on the surface of the mask, the illuminated area on the surface of the semi-reflective film is strip-shaped and has a first width, and the illuminated area on the surface of the mask is strip-shaped and has a second width. width; wherein the first width is ten times or more than the second width.
Description
本創作係與穿透透明物的取像技術有關,特別是指可以穿透半反射膜來對光罩取像的一種對光罩取像之取像裝置。This creation is related to the imaging technology of penetrating transparent objects, in particular, it refers to an imaging device for imaging the mask that can penetrate the semi-reflective film to capture the image.
目前的光學檢測技術,是以光投射於待測物,進而在該待測物表面有瑕疵點時能在有光照的區域顯現出來,再進行取像,並將取得的影像以影像處理方式或是人工判斷方式來進行直接辦識或是與樣板進行比對,進而檢測出瑕疵點。The current optical detection technology is to project light on the object to be tested, and then when there are defects on the surface of the object to be tested, it can be displayed in the illuminated area, and then the image is taken, and the obtained image is processed by image processing or It is a manual judgment method for direct identification or comparison with the model to detect defects.
然而,現有的已知光學檢測技術, 在待測物是光罩時,其表面會因為具有半反射膜而有不易檢測瑕疵的問題,此乃由於當光照射在半反射膜上時,穿透該半反射膜上表面的光在照射於該半反射膜下表面時,會反射回來,而當反射光再照射於該半反射膜上表面時,就有可能再反射而再照射至該下表面。如此一來,在該半反射膜內即會因反覆反射而產生很大量的散射雜訊,進而造成無法檢測的結果,因此,這是一個需要解決的問題。However, in the existing known optical inspection technology, when the object to be tested is a photomask, its surface will have the problem that it is difficult to detect defects because of the semi-reflective film. This is because when the light shines on the semi-reflective film, it will penetrate When the light on the upper surface of the semi-reflective film is irradiated on the lower surface of the semi-reflective film, it will be reflected back, and when the reflected light is irradiated on the upper surface of the semi-reflective film, it may be reflected again and then irradiated to the lower surface . In this way, a large amount of scattering noise will be generated due to repeated reflections in the semi-reflective film, which will result in undetectable results. Therefore, this is a problem that needs to be solved.
我國早期公開第201917375號專利,揭露了一種光學檢測方法,此案中使用了一個具有狹縫的遮光片來來遮蔽光源的部分光束,再使光源穿透該透光物件,並以影像擷取模組於該透光物件取像。此種技術僅能用於透明物的檢測,但不能針對這個透明物的特定表面進行檢測,因此,此技術不能適用於穿透半反射膜再對光罩表面進行檢測的需求。my country's early publication No. 201917375 patent discloses an optical detection method. In this case, a light-shielding film with slits is used to shield part of the light beam from the light source, and then the light source penetrates the light-transmitting object, and the image capture model The group captures images on the light-transmitting object. This technique can only be used for the detection of transparent objects, but it cannot detect the specific surface of the transparent object. Therefore, this technology cannot be applied to the requirement of detecting the surface of the mask after penetrating the semi-reflective film.
本創作之主要目的即在於提出一種對光罩取像之取像裝置,其可穿透半反射膜來對光罩的表面清楚的取像,以利後續進行正確的檢測。The main purpose of this creation is to provide an image capturing device for capturing images on the mask, which can clearly capture images on the surface of the mask through the semi-reflective film, so as to facilitate subsequent correct detection.
為了達成上述目的,本創作提出一種對光罩取像之取像裝置,包含有:一光源,沿一第一光軸發光;一狹縫板,具有呈直線形的一狹縫且位於該第一光軸;一半反射鏡,位於該第一光軸,該光源所發出的光通過該狹縫後照射於該半反射鏡,而有部分的光反射而沿一第二光軸照射,且其餘的光則穿透該半反射鏡,該第二光軸與該第一光軸相夾一預定角度,且該預定角度小於180度;一可調焦物鏡,位於該第二光軸,前述由該半反射鏡反射而沿該第二光軸照射的光係穿過該可調焦物鏡而照射於一光罩,該可調焦物鏡可受操作來調整焦距,其中該光罩上係貼設有一半反射膜,前述沿該第二光軸照射的光係穿透該半反射膜而照射於該光罩表面;以及一攝影機,位於第二光軸而使得該半反射鏡位於該可調焦物鏡與該攝影機之間,該攝影機係沿該第二光軸透過該半反射膜來對該光罩表面取像;其中,該光源所發出的光係通過該狹縫而被塑形成窄條狀光線射出,而經由該半反射鏡的反射再穿過該可調焦物鏡,並進一步的受到該可調焦物鏡聚焦而形成沿照射方向由寬漸窄的條狀光束,進而照射於該半反射膜的表面,該半反射膜的表面被照明的區域即呈長條狀且具有一第一寬度,該條狀光束並且有部分穿透該半反射膜而照射於該光罩表面,該光罩表面被照明的區域即呈長條狀且具有一第二寬度,該攝影機係用以經由該可調焦物鏡對該光罩表面取像;其中,該第一寬度係為該第二寬度的十倍或十倍以上。In order to achieve the above purpose, this creation proposes an imaging device for imaging a mask, comprising: a light source emitting light along a first optical axis; a slit plate having a linear slit located at the first optical axis An optical axis; a half reflector, located on the first optical axis, the light emitted by the light source passes through the slit and illuminates the half reflector, and part of the light is reflected and irradiated along a second optical axis, and the rest The light then penetrates the half mirror, the second optical axis and the first optical axis have a predetermined angle, and the predetermined angle is less than 180 degrees; an adjustable focus objective lens is located on the second optical axis, and the aforementioned The light reflected by the half mirror and irradiated along the second optical axis passes through the adjustable focus objective lens and irradiates a mask, and the adjustable focus objective lens can be operated to adjust the focal length, wherein the mask is attached with a A semi-reflective film, the aforementioned light system irradiated along the second optical axis penetrates the semi-reflective film and is irradiated on the surface of the mask; Between the camera and the camera, the camera passes through the semi-reflective film along the second optical axis to take an image of the surface of the mask; wherein, the light emitted by the light source passes through the slit and is shaped into a narrow strip of light After being reflected by the semi-reflective mirror, it passes through the adjustable focus objective lens, and is further focused by the adjustable focus objective lens to form a strip beam that gradually narrows along the irradiation direction, and then irradiates on the semi-reflective film The illuminated area on the surface of the semi-reflective film is strip-shaped and has a first width. The strip-shaped light beam also partially penetrates the semi-reflective film and irradiates the surface of the mask. The surface of the mask The illuminated area is elongated and has a second width, and the camera is used to take an image of the mask surface through the adjustable focus objective lens; wherein, the first width is ten times the second width or ten times more.
藉此,本創作可以達到對光罩的表面取像時極為清晰,以利後續進行正確檢測的功效,而較先前技術所取得的影像更為清晰,檢測結果即可以更為正確。In this way, the invention can achieve a very clear image of the surface of the mask to facilitate subsequent correct detection. Compared with the image obtained by the previous technology, the image is clearer, and the detection result can be more accurate.
為了詳細說明本創作之技術特點所在,茲舉以下之較佳實施例並配合圖式說明如後,其中:In order to describe the technical characteristics of this creation in detail, the following preferred embodiments are given below and described in conjunction with the drawings, wherein:
如圖1至圖3所示,本創作一較佳實施例提出一種對光罩取像之取像裝置10,主要由一光源11、一狹縫板13、一半反射鏡15、一可調焦物鏡17以及一攝影機19所組成,並配合一第一管21與第二管25來組裝,其中:As shown in Figures 1 to 3, a preferred embodiment of the invention proposes an
該光源11,安裝於該第一管21內,沿一第一光軸A1發光。The
該狹縫板13,安裝於該第一管21內,具有呈直線形的一狹縫131且位於該第一光軸A1。該狹縫板13可視需要來採用可調整該狹縫131的寬度的機構,也可以在確定所需要的狹縫131寬度後選用其狹縫131為固定寬度者。The
該半反射鏡15,安裝於該第二管25內,位於該第一光軸A1,該光源11所發出的光通過該狹縫131後照射於該半反射鏡15,而有部分的光反射而沿一第二光軸A2照射,且其餘的光則穿透該半反射鏡15,該第二光軸A2與該第一光軸A1相夾一預定角度,且該預定角度小於180度,於本實施例中,該預定角度係為90度。The
該可調焦物鏡17,安裝於該第二管25的一端,位於該第二光軸A2,前述由該半反射鏡15反射而沿該第二光軸A2照射的光係穿過該可調焦物鏡17而照射於一光罩91,該可調焦物鏡17可受操作來調整焦距,其中該光罩91上係貼設有一半反射膜92,前述沿該第二光軸A2照射的光係穿透該半反射膜92而照射於該光罩91表面。The adjustable focus
該攝影機19,安裝於該第二管25內,位於該第二光軸A2而使得該半反射鏡15位於該可調焦物鏡17與該攝影機19之間,該攝影機19係沿該第二光軸A2透過該半反射膜92來對該光罩91表面取像。The
其中,該第一管21的一端係組裝於該第二管25的管身且對準該半反射鏡15,且該第一管21與該第二管25內在空間上相通。Wherein, one end of the
其中,該光源11所發出的光係通過該狹縫131而被塑形成窄條狀光線射出,而經由該半反射鏡15的反射再穿過該可調焦物鏡17,並進一步的受到該可調焦物鏡17聚焦而形成沿照射方向由寬漸窄的條狀光束L,進而照射於該半反射膜92的表面,該半反射膜92的表面被照明的區域即呈長條狀且具有一第一寬度W1,該條狀光束L並且有部分穿透該半反射膜92的表面而照射於該光罩91的表面,該光罩91的表面被照明的區域即呈長條狀且具有一第二寬度W2,該攝影機19係用以經由該可調焦物鏡17透過該半反射膜92來對該光罩91表面取像。於實際實施時,該攝影機19較佳可使用線掃描系統,而可搭配該條狀光束L的照射區域,使得照射區域的窄邊寬度不像影響取像結果,然而,一般的攝影機再配合影像處理技術也是可以達成取像的結果的,本案的該攝影機19並不以線掃描系統為限制。Wherein, the light emitted by the
其中,該第一寬度W1係為該第二寬度W2的十倍或十倍以上,於本實例中係以二十倍為例。Wherein, the first width W1 is ten times or more than the second width W2, and twenty times is taken as an example in this example.
在實際實施時,如圖3所示,可以再設置一檢測台99以及一升降驅動台31。該檢測台99係用以承載該光罩91,而該第二管25則設於該升降驅動台31,該升降驅動台31係驅動該第二管25連同該第一管21一起相對於該檢測台99移動而靠近或遠離。此外,該第二管25內還進一步的設置一消光板251,且該消光板251位於該光源11所發出的光部分穿透該半反射鏡15後的位置,藉以吸收掉照射於其上的光,進而避免光反射回該半反射鏡15。In actual implementation, as shown in FIG. 3 , a
在本實施例中,該第一管21設置為彎折狀,圖1至圖3中該第一管21具有一彎折部211,該第一管21內於該彎折部211設有一反射鏡22,而可以反射該光源1的光而照射至該半反射鏡15。此種結構可以使該第一管21有部分與該第二管25平行,藉以減少整體結構所佔的空間。在本實施例中即以此種圖1至圖3所示之第一管21呈彎折狀態的架構來說明。在其他種實施架構中,如圖4所示,該第一管21也可以改成直管狀而不彎折,而並不以前述的彎折狀態為限。In this embodiment, the
以上說明了本實施例的結構,接下來說明本實施例的操作狀態。The configuration of the present embodiment has been described above, and the operation state of the present embodiment will be described next.
如圖3及圖5至圖7所示,在使用前,係先將一光罩91置於該檢測台99。接著操作該升降驅動台31來驅動該第二管25連同該第一管21一起移動,藉以調整該可調焦物鏡17與該光罩91之間的距離,並且調整該可調焦物鏡17的焦距。藉由前述兩者的調整,可以達到調整該條狀光束L照射於該半反射膜92的表面的寬度及照射於該光罩91表面的寬度,使該第一寬度W1為該第二寬度W2的二十倍,而該條狀光束L照射於該光罩91表面的區域即為一檢測區域IA,而呈長條狀。As shown in FIG. 3 and FIG. 5 to FIG. 7 , before use, a
如圖8至圖9所示,係以習知技術為例說明,其光照方式係為使第一寬度僅略寬於該第二寬度的狀況,因此,由該可調焦物鏡17’射出條狀光束L’在穿過該半反射膜92’的表面後即會照射於該光罩91’的表面,而照射於該光罩91’表面上的光在反射後,即會反射至該半反射膜92’的表面,之後又在該半反射膜92’的表面反射而再度照向該光罩91’的表面,進而就會再於照射在該光罩91’表面時再次反射,而這種重覆反射的光即會造成取像上的模糊,而該光罩91’表面的被照射區域也是被做為檢測區域IA’,而呈圓形。As shown in Figures 8 to 9, the prior art is taken as an example, and the illumination mode is such that the first width is only slightly wider than the second width. The light beam L' will irradiate the surface of the mask 91' after passing through the surface of the semi-reflective film 92', and the light irradiated on the surface of the mask 91' will be reflected to the semi-reflective film after being reflected. The surface of the reflective film 92' is then reflected on the surface of the semi-reflective film 92' and illuminates the surface of the photomask 91' again, and then reflects again when it is irradiated on the surface of the photomask 91', and this This kind of repeatedly reflected light will cause the blurring of the image, and the irradiated area on the surface of the mask 91' is also used as the detection area IA', which is circular.
然而,本實施例可以大幅度的改善這種模糊的狀況發生,如圖2、圖6及圖10所示,在使用時,利用該狹縫板13的該狹縫131將該光源11所發出的光塑形後,由該可調焦物鏡17射出該條狀光束L,該條狀光束L所照射的光在穿透該半反射膜92的表面後即會照射於該光罩91表面,而照射於該光罩91表面上的光在反射後,即會照射至該半反射膜92的表面。本案之重點在於,藉由本實施例的該第一寬度W1為該第二寬度W2的二十倍的關係,可以使得實際照射於該光罩91表面的光在反射後,僅有該第一寬度W1的二十分之一(即5%)的寬度的光線會反射至該該半反射膜92的表面,因此,實際上反射至該該半反射膜92的表面的光線很少,因此,這些很少的光線再由該該半反射膜92的表面再反射至該光罩91的表面時,很大一部分即會落在該光罩91表面被該條狀光束L直接照射的區域之外,因此在取像時這個被該條狀光束L直接照射的區域之外的區域即會呈現出很暗的狀況,因此在取像後可以在進行後端的影像處理比對時忽略不計。這樣一來,該攝影機19所取像得到的影像,就只有該光罩91表面被該條狀光束L直接照射的區域是較亮的,而其他部分都是很暗的狀況,也因此,在實際檢測時,就能夠以這個該光罩91表面被該條狀光束L直接照射的區域做為該檢測區域IA了,在圖6及圖10中,該檢測區域IA即是該光罩91表面標示了該第二寬度W2的部位。However, this embodiment can greatly improve the occurrence of this blurred situation. As shown in FIG. 2, FIG. 6 and FIG. After the light is shaped, the focusable
接著,只需移動該光罩91來使該條狀光束L掃描經過該光罩91的全部表面,或橫向移動該升降驅動台31來使該條狀光束L掃描經過該光罩91的表面,此即等於該檢測區域IA不斷的移動,即可對該光罩91的表面進行完整且清晰的取像,以利後續影像處理或人工的檢測比對。Then, only need to move the
由上述說明可以了解到,本創作可以達到對該光罩91的表面取像時極為清晰,以利後續進行正確檢測的功效,而較先前技術所取得的影像更為清晰,檢測結果即可以更為正確。It can be understood from the above description that this creation can achieve very clear images of the surface of the
須補充說明的是,前述的該第一寬度W1為該第二寬度W2的二十倍的關係,僅是舉例而已,並非用來限制本案之專利範圍,實際上還可以視該狹縫131的寬度、該光源11的亮度、以及該可調焦物鏡17與該光罩91之間的距離來決定該第一寬度W1與該第二寬度W2之間的倍數關係,而決定因素則是實際取像時的清晰程度,以本創作之技術而言,則該第一寬度W1最少是該第二寬度W2的十倍或十倍以上是較佳的狀況,圖11即顯示該第一寬度W1為該第二寬度W2的十倍的狀態,在此情況下,可以使得實際照射於該光罩91表面上的光在反射後,僅有該第一寬度W1的十分之一(即10%)的寬度的光線會反射至該半反射膜92的表面。此外,該第一寬度W1與該第二寬度W2之間的倍數關係並不限定是整數倍數關係。It should be added that the aforesaid relationship that the first width W1 is twenty times the second width W2 is only an example, and is not intended to limit the scope of the present patent. In fact, the
10:對光罩取像之取像裝置
11:光源
13:狹縫板
131:狹縫
15:半反射鏡
17,17’:可調焦物鏡
19:攝影機
21:第一管
211:彎折部
22:反射鏡
25:第二管
251:消光板
31:升降驅動台
91,91’:光罩
92,92’:半反射膜
99:檢測台
A1:第一光軸
A2:第二光軸
IA,IA’:檢測區域
L,L’:條狀光束
W1:第一寬度
W2:第二寬度10: The imaging device for imaging the mask
11: Light source
13: Slit plate
131: Slit
15:
圖1係本創作一較佳實施例之立體圖。 圖2係本創作一較佳實施例之內部結構示意圖。 圖3係本創作一較佳實施例之組裝示意圖。 圖4係本創作一較佳實施例之另一內部結構示意圖。 圖5係本創作一較佳實施例之操作示意圖。 圖6係本創作一較佳實施例之光照示意圖。 圖7係圖6之照射結果示意圖,顯示光照於該光罩表面時的照射範圍。 圖8係習知技術之操作示意圖。 圖9係圖8之照射結果示意圖,顯示光照於該光罩表面時的照射範圍。 圖10係圖6之局部放大圖。 圖11係類似圖10之另一種狀態之操作示意圖。 Fig. 1 is the perspective view of a preferred embodiment of this creation. Fig. 2 is a schematic diagram of the internal structure of a preferred embodiment of the invention. Fig. 3 is a schematic diagram of assembly of a preferred embodiment of the invention. Fig. 4 is another schematic view of the internal structure of a preferred embodiment of the invention. Fig. 5 is a schematic diagram of the operation of a preferred embodiment of the invention. Fig. 6 is a schematic diagram of illumination of a preferred embodiment of the invention. FIG. 7 is a schematic diagram of the irradiation result of FIG. 6, showing the irradiation range when the light shines on the surface of the mask. Fig. 8 is a schematic diagram of the operation of the prior art. FIG. 9 is a schematic diagram of the irradiation result of FIG. 8, showing the irradiation range when the light shines on the surface of the mask. Fig. 10 is a partially enlarged view of Fig. 6 . Fig. 11 is a schematic diagram of operation in another state similar to Fig. 10 .
10:對光罩取像之取像裝置 10: The imaging device for imaging the mask
11:光源 11: Light source
13:狹縫板 13: Slit plate
131:狹縫 131: Slit
15:半反射鏡 15: half mirror
17:可調焦物鏡 17: Adjustable focus objective lens
19:攝影機 19: Camera
21:第一管 21: First Tube
211:彎折部 211: bending part
22:反射鏡 22: Mirror
25:第二管 25: Second pipe
251:消光板 251: matting board
A1:第一光軸 A1: The first optical axis
A2:第二光軸 A2: Second optical axis
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW111209965U TWM636876U (en) | 2022-09-13 | 2022-09-13 | Image capturing device for photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111209965U TWM636876U (en) | 2022-09-13 | 2022-09-13 | Image capturing device for photomask |
Publications (1)
Publication Number | Publication Date |
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TWM636876U true TWM636876U (en) | 2023-01-21 |
Family
ID=86659134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW111209965U TWM636876U (en) | 2022-09-13 | 2022-09-13 | Image capturing device for photomask |
Country Status (1)
Country | Link |
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TW (1) | TWM636876U (en) |
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2022
- 2022-09-13 TW TW111209965U patent/TWM636876U/en unknown
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