TWM630048U - Series-type diode package device - Google Patents

Abstract

The present invention provides a series diode package device, which includes a plurality of carrier frames, a plurality of diode chips, and a plurality of jumper frames. Each of the carrier frames has a chip setting portion or a bridging portion, or has a chip setting portion and a bridging portion bent at the chip setting portion. Each of the diode chips is arranged on each of the wafer setting portions. Each of the bridging frames is bridged between two adjacent bearing frames, and two ends of each of the bridging frames are respectively connected to each of the diode chips and each of the bridging portions to form a series structure.

Description

Series Diode Package Components

The present invention provides a diode package component, especially a series diode package component.

In electronic circuits, diode components are often used to perform rectification, voltage regulation, and loop protection. To apply to high-voltage circuits, multiple diode elements can be connected in series in the circuit.

The creator believes that the conventional technique of connecting a plurality of diodes in series in a circuit increases the complexity of the circuit and is not conducive to an automated process.

In view of the lack of the prior art, the creator tried his best to propose a series-type diode package component, which can be applied to a high-voltage circuit, so as to simplify the applied circuit and facilitate an automated process.

In order to achieve the above-mentioned and other purposes, the present invention provides a series diode package device, which includes a plurality of carrier frames, a plurality of diode chips, and a plurality of jumper frames. Each of the carrier frames has a chip setting portion or a bridging portion, or has a chip setting portion and a bridging portion bent at the chip setting portion. Each of the diode chips is arranged on each of the wafer setting portions. Each of the bridging frames is bridged between two adjacent bearing frames, and two ends of each of the bridging frames are respectively connected to each of the diode chips and each of the bridging portions to form a series structure.

In one embodiment, the equal-carrying frame may include an inlet frame, an outlet frame, and at least one intermediate frame arranged between the inlet frame and the outlet frame.

In one embodiment, the inlet frame only has the wafer setting portion, the outlet frame only has the bridging portion, and the at least one intermediate frame may have the wafer setting portion and the bridging portion bent at the wafer setting portion.

In one embodiment, the at least one intermediate frame may be L-shaped and arranged between the inlet frame and the outlet frame to complement each other.

In one embodiment, the supporting frames arranged complementary to each other may have at least one inflection point.

In one embodiment, the series diode package device may further include a package body. The package body covers the carrier frames, the diode chips and the jumper frames to form a package structure.

In one embodiment, each of the carrier frames may be provided with a lead protruding from the package body.

In one embodiment, the spanning frames may be arranged parallel to each other.

In one embodiment, the diode chip may include a silicon (Si)-based Schottky diode, a silicon carbide (SiC) Schottky diode, a gallium nitride (GaN) diode, Gallium arsenide (GaAs) diodes, fast recovery diodes or general PN junction diodes.

Therefore, the series-type diode package device of the present invention can be applied to high-voltage circuits by connecting a plurality of diode chips in series through the carrier frames and the jumper frames, so that the applied circuit Streamlined and automated process.

In order to fully understand the purpose, features and effects of this creation, hereby use the following specific embodiments and cooperate with the attached drawings to give a detailed description of this creation, and the description is as follows:

Please refer to FIGS. 1 to 4 . As shown in FIG. 1 , an embodiment of the present invention provides a series-type diode package device 100 , which includes a plurality of conductive supporting frames 101 , a plurality of diode chips 102 and a conductive The plurality of spanning frames 103 . Each of the carrier frames 101 has a chip setting portion 104 or a bridging portion 105 , or has a chip setting portion 104 and a bridging portion 105 bent on the chip setting portion 104 . Each of the diode chips 102 is arranged on each of the wafer setting portions 104 . Each of the spanning frames 103 spans between two adjacent bearing frames 101 . Two ends of each of the bridging frames 103 are respectively connected to each of the diode chips 102 and each of the bridging portions 105 to form a series structure. The diode wafer 102 includes a silicon (Si)-based Schottky diode, a silicon carbide (SiC) Schottky diode, a gallium nitride (GaN) diode, and a gallium arsenide (GaAs) diode. Diodes, fast recovery diodes, general PN junction diodes. However, it is not limited to this, and other types of diode chips may also be used.

Therefore, the series diode package device 100 of the embodiment of the present invention can be applied to high voltage circuits ( (not shown), thereby simplifying the applied circuit and facilitating the automated process.

As shown in FIGS. 1 to 4 , in one embodiment, the isolating frame 101 may include an inlet frame 106 , an outlet frame 107 and at least one intermediate frame 108 arranged between the inlet frame 106 and the outlet frame 107 . . The inlet frame 106 only has the wafer setting portion 104 , and the outlet frame 107 only has the bridging portion 105 . The at least one intermediate frame 108 may have the chip setting portion 104 and the bridging portion 105 bent at the chip setting portion 104 . In FIG. 1 , the number of the intermediate frames 108 is plural, and the intermediate frames 108 can be L-shaped respectively and are arranged between the inlet frame 106 and the outlet frame 107 to complement each other, so as to form a series structure. It is integrated, and the length of the bridging frame 103 can be bridged between the two load-bearing frames 101 without being too long. In FIG. Two bridging frames 103 bridging between three intermediate frames 108 and one bridging frame 103 bridging between one intermediate frame 108 and the outlet frame 107 . The number of the intermediate frames 108 shown in FIG. 1 is three, but not limited thereto. Under the above configuration, the supporting frames 101 arranged complementary to each other may have at least one inflection point, and the bridging frames 103 may be arranged parallel to each other. Two ends of each of the bridging frames 103 can be respectively welded to a diode chip 102 and a bridging portion 105 , but not limited thereto. The material of the carrying frames 101 and the bridging frames 103 can be copper or iron-nickel alloy.

As shown in FIG. 1 to FIG. 6 , in one embodiment, the series diode package device 100 may further include a package body 109 . The package body 109 covers the carrier frames 101 , the diode chips 102 and the jumper frames 103 to form a package structure. Each of the carrier frames 101 may be provided with a pin 110 protruding from the package body 109 to be electrically connected to the circuit board when the series diode package element 100 is mounted on a circuit board (not shown). circuit (not shown). As shown in FIG. 5 and FIG. 6 , both sides of the tandem diode package device 100 have a plurality of pins 110 protruding from the package body 109 . The package body 109 can be epoxy resin or other insulating packaging materials.

The present creation has been disclosed above with preferred embodiments, but those skilled in the art should understand that the embodiments are only used to describe the present creation, and should not be construed as limiting the scope of the present creation. It should be noted that all changes and substitutions equivalent to this embodiment should be set to be included in the scope of the present creation. Therefore, the scope of protection of this creation shall be determined by the scope of the patent application.

100: Series Diode Package Components 101: Bearing Frame 102: Diode chip 103: Jumper Frames 104: Wafer Setting Section 105: Jumper 106: Entry Frame 107: Export Framework 108: Intermediate frame 109: Package body 110: pin

FIG. 1 is a schematic top perspective view of a series diode package element according to a specific embodiment of the present invention. FIG. 2 is a cross-sectional schematic diagram corresponding to the inlet frame, the intermediate frame, the diode wafer and the jumper frame of FIG. 1 for bridging. FIG. 3 is a cross-sectional schematic diagram corresponding to the two intermediate frames, the diode chip and the jumper frame of FIG. 1 for bridging. FIG. 4 is a cross-sectional schematic diagram corresponding to the bridging of the outlet frame, the intermediate frame, the diode wafer and the bridging frame of FIG. 1 . FIG. 5 is a schematic top view corresponding to FIG. 1 . FIG. 6 is a schematic bottom view corresponding to FIG. 1 .

101: Bearing Frame

102: Diode chip

103: Jumper Frames

104: Wafer Setting Section

105: Jumper

106: Entry Frame

107: Export Framework

108: Intermediate frame

109: Package body

110: pin

Claims (9)

A tandem diode package component, comprising: a plurality of carrying frames, each of the carrying frames has a chip setting part or a bridging part, or has a chip setting part and a bridging part bent at the chip setting part; a plurality of diode chips, each of which is disposed on each of the chip setting portions; and A plurality of bridging frames, each bridging frame is bridged between two adjacent bearing frames, and two ends of each bridging frame are respectively connected to each of the diode chips and each of the bridging parts to form a series connection structure. The tandem diode package as claimed in claim 1, wherein the carrier frames include an inlet frame, an outlet frame, and at least one intermediate frame arranged between the inlet frame and the outlet frame. The tandem diode package as claimed in claim 2, wherein the inlet frame only has the chip setting portion, the outlet frame only has the jumper portion, and the at least one intermediate frame has the chip setting portion and is bent at the chip setting portion. the bridging portion of the wafer setting portion. The tandem diode package element as claimed in claim 3, wherein the at least one intermediate frame is L-shaped and is arranged between the inlet frame and the outlet frame complementary to each other. The tandem diode package component according to claim 4, wherein the carrier frames arranged complementary to each other have at least one inflection point. The tandem diode package device according to claim 1, further comprising a package body covering the carrier frames, the diode chips and the jumper frames to form a package structure. The tandem diode package component as claimed in claim 6, wherein each of the carrier frames is provided with a pin protruding from the package body. The tandem diode package component of claim 1, wherein the jumper frames are arranged parallel to each other. The tandem diode package device of claim 1, wherein the diode chip comprises a silicon (Si)-based Schottky diode, a silicon carbide (SiC) Schottky diode, a nitrogen Gallium nitride (GaN) diodes, gallium arsenide (GaAs) diodes, fast recovery diodes or general PN junction diodes.

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